CN103456855A - LED surface coarsening chip and manufacturing method thereof - Google Patents
LED surface coarsening chip and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an LED surface coarsening chip and a manufacturing method thereof. The LED surface coarsening chip comprises a substrate and an epitaxial layer which is formed on the substrate, and the epitaxial layer sequentially comprises an n-GaN layer, a light-emitting layer and a p-GaN layer. A transparent conductive layer is formed on the p-GaN layer. The LED surface coarsening chip further comprises an n-type electrode and a p-type electrode which are formed on the n-GaN layer and the transparent conductive layer respectively, wherein the surface of the p-GaN layer is provided with a plurality of coarsening patterns. The transparent conductive layer is provided with a plurality of hole opening patterns, and all or part of the coarsening patterns are made to be exposed in the hole opening patterns. The LED surface coarsening chip can effectively reduce or avoid total reflection phenomena, therefore, the light-emitting efficiency of the LED surface coarsening chip can be improved, meanwhile, the ohmic contact problem between the transparent conductive layer and the p-GaN layer can be solved, therefore, the current injection efficiency of the LED surface coarsening chip can be guaranteed, and finally the switching efficiency of the LED surface coarsening chip is guaranteed to be effectively improved.
Description
Technical field
The present invention relates to a kind of LED chip, be specifically related to a kind of LED surface coarsening chip and manufacture method.
Background technology
As everyone knows, the conversion efficiency of LED chip=electric current injection efficiency * internal quantum efficiency * light extraction efficiency; Wherein, internal quantum efficiency is mainly determined by growth technology and the epitaxial material characteristic of LED chip, as adopt the LED chip that the GaN epitaxial material is made can reach 99% at present, and substantially approach its theoretical limit situation, cause that the raising of internal quantum efficiency has not had larger space; The electric current injection efficiency depends primarily on electrode design and the ohmic contact of LED chip, and the electric current injection efficiency of at present good LED chip also can reach more than 98%; And light extraction efficiency is mainly by LED chip surface characteristic and structures shape, the light extraction efficiency of LED chip is generally in the 10-70% left and right at present, so the raising space of light extraction efficiency is larger.For this reason, existing more public technology, as the substrate back of the body plates the light extraction efficiency that DBR, sidewall burn into surface coarsening or reverse installation process improve LED chip, wherein, surface coarsening is generally considered the effective ways that improve the LED chip light extraction efficiency.
The main manufacture craft of existing conventional LED chip is: substrate (generally adopting sapphire material) is made the epitaxial loayer that is shaped and is comprised of n-GaN layer, luminescent layer and p-GaN layer successively, then at p-GaN layer shaping transparency conducting layer (generally adopting the ITO material), finally make successively shaping N-shaped electrode and p-type electrode at n-GaN layer and p-GaN layer respectively.Due to the refractive index of GaN in 2.5 left and right, and the refractive index of air is 1, refractive index between the two differs larger, so there is more serious total reflection phenomenon on LED chip and interface, space, cause the light that in LED chip, luminescent layer produces that the outgoing of small part energy is only arranged, most of light is because total reflection phenomenon is limited in LED chip inside, therefore existing optimisation technique proposes to carry out surface coarsening by the p-GaN layer to LED chip, thereby can avoid foregoing total reflection phenomenon, increase the surperficial bright dipping of LED chip, and then improve the conversion efficiency of LED chip.
Yet existing disclosed LED chip surface coarsening technology need change the making forming technology of epitaxial loayer, to increase the thickness of p-GaN layer, and then meet the requirement of the p-GaN layer being carried out to dry method in surface coarsening or wet etching, the ubiquity specification requirement is higher, the shortcomings such as manufacturing process is wayward, simultaneously because transparency conducting layer directly contacts with the p-GaN layer with surface coarsening structure, can cause the ohmic contact problem between transparency conducting layer and p-GaN layer in LED chip, cause the surface contacted resistance between the two to increase, and then cause the forward voltage of LED chip to raise, finally cause the electric current injection efficiency of LED chip to reduce, be unfavorable for final conversion efficiency of making the LED chip obtained.
The Chinese patent that is CN101702419A as publication number discloses the method for coarsening surface of p-GaN layer in a kind of GaN based LED chip structure or ITO layer, and the method comprises the steps: (1) the stacked structure of growing low temperature GaN resilient coating, the GaN layer that undopes, n-GaN layer, multiple quantum well layer, p-GaN layer and evaporation ITO current extending successively on Semiconductor substrate; (2) prepare the individual layer nickel nano particle as mask, at p-GaN layer or ITO layer surface, make the alligatoring structure.The inventive method step is simple, and cost is low, and alligatoring is effective; By the inventive method, p-GaN layer or the ITO layer of GaN base LED carried out to surface coarsening, can suppress the total reflection of photon in chip, improve the light extraction efficiency of device.Although this patent effects on surface roughening process has carried out simplifying to a certain extent, has equally the ohmic contact problem between above-mentioned transparency conducting layer and p-GaN layer.
Therefore, be necessary to seek a kind of surface coarsening structure or technique of LED chip, this structure or technique can effectively reduce or avoid total reflection phenomenon, and then the light extraction efficiency of raising LED chip, can avoid again producing the ohmic contact problem between transparency conducting layer and p-GaN layer simultaneously, and then guarantee the electric current injection efficiency of LED chip.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of LED surface coarsening chip and manufacture method, can effectively reduce or avoid total reflection phenomenon, and then the light extraction efficiency of raising LED chip, can avoid again producing the ohmic contact problem between transparency conducting layer and p-GaN layer simultaneously, and then guarantee the electric current injection efficiency of LED chip, finally effectively guarantee that the conversion efficiency of LED chip is improved.
To achieve these goals, technical scheme provided by the invention is as follows:
A kind of LED surface coarsening chip, described LED chip comprises substrate and is formed in the epitaxial loayer on described substrate, described epitaxial loayer comprises n-GaN layer, luminescent layer and p-GaN layer successively; Be formed with transparency conducting layer on described p-GaN layer; And be formed separately N-shaped electrode and the p-type electrode on described n-GaN layer and described transparency conducting layer, wherein, described p-GaN layer surface is provided with a plurality of alligatoring figures; Described transparency conducting layer is provided with a plurality of perforate figures, makes all or part of alligatoring figure be exposed in this perforate figure.
Preferably, described perforate figure is circle, ellipse or polygonal shape.
Preferably, the full-size of described perforate figure is 2-15 μ m, and the spacing between described perforate figure is 5-50 μ m.
Preferably, described perforate pattern arrangement is honeycomb type or intersecting parallels shape.
Preferably, the gross area of described perforate figure accounts for the 5-25% of the total lighting area of described LED surface coarsening chip.
Preferably, the material of described transparency conducting layer is selected from ITO, ZnO, CdO, Cd
2snO
4in any one.
Preferably, the material of described substrate is selected from any one in sapphire, carborundum, silicon, GaAs, gallium nitride, aluminium nitride and spinelle.
Preferably, a kind of manufacture method of LED surface coarsening chip as above, wherein, its operating procedure comprises:
A), make successively n-GaN layer, luminescent layer and p-GaN layer, described n-GaN layer, luminescent layer and p-GaN layer composition epitaxial loayer on substrate;
B), described epitaxial loayer is carried out to the etching technics processing, obtain the PN step, this PN step makes part n-GaN layer expose surface;
C), the roughening process processing is carried out in described p-GaN layer surface, obtain the p-GaN layer that its surface has a plurality of alligatoring figures;
D), at above-mentioned steps c) its surface of obtaining has on the p-GaN layer of a plurality of alligatoring figures and makes transparency conducting layer;
E), described transparency conducting layer is carried out to the photoetching process processing, obtain having the transparency conducting layer of a plurality of perforate figures, make all or part of alligatoring figure be exposed in this perforate figure;
F), make N-shaped electrode and p-type electrode respectively on described n-GaN layer and the described transparency conducting layer with a plurality of perforate figures.
Preferably, described step c) specifically comprises:
C10), make silicon dioxide film on described p-GaN layer surface;
C20), described silicon dioxide film is carried out to the photoetching process processing, obtain having the silicon dioxide film of a plurality of perforate figures;
C30), using above-mentioned steps c20) silicon dioxide film with a plurality of perforate figures that obtains is as mask, and dry method or wet etching are carried out in described p-GaN layer surface, makes the p-GaN layer surface that is positioned at perforate figure place form respectively a plurality of alligatoring figures;
C40), the described silicon dioxide film with a plurality of perforate figures is carried out to the photoetching process processing again, obtain having the silicon dioxide film of current blocking layer pattern, this silicon dioxide film is as current barrier layer, and described current barrier layer is between described p-GaN layer and described transparency conducting layer.
Preferably, described step c30) being: using above-mentioned steps c20) silicon dioxide film with a plurality of perforate figures that obtains is as mask, in temperature, be under 200-300 ℃, adopt acid solution to carry out wet etching to described p-GaN layer surface, make the p-GaN layer surface that is positioned at perforate figure place form respectively a plurality of alligatoring figures.
The present invention arranges the alligatoring figure by the p-GaN layer surface at LED chip, at transparency conducting layer, the perforate figure is set simultaneously, make all or part of alligatoring figure be exposed in this perforate figure, alligatoring structure has wherein possessed the surface coarsening effect to p-GaN layer and transparency conducting layer simultaneously, can effectively reduce or avoid total reflection phenomenon, and then the light extraction efficiency of raising LED chip, and simple in structure, easy to make, perforate figure wherein is owing to not participating in conduction, therefore can guarantee the electric current uniformity of transparency conducting layer, effectively avoid producing the ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantee the electric current injection efficiency of LED surface coarsening chip, finally effectively guarantee that the conversion efficiency of LED surface coarsening chip is improved, further, the manufacture method of the LED surface coarsening chip that the present invention proposes does not need to change the making forming technology of existing epitaxial loayer, simple and convenient, cost of manufacture is low, is beneficial to and carries out the scale production application.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, the accompanying drawing the following describes is only some embodiment that put down in writing in the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Accompanying drawing 1 is the structural representation of LED chip under the specific embodiment of the invention;
Accompanying drawing 2 is LED chip completing steps c20 in the embodiment of the present invention 1) time structural representation;
Accompanying drawing 3 is LED chip completing steps c30 in the embodiment of the present invention 1) time structural representation.
Embodiment
The embodiment of the invention discloses a kind of LED surface coarsening chip, LED chip comprises substrate and is formed in the epitaxial loayer on substrate, and epitaxial loayer comprises n-GaN layer, luminescent layer and p-GaN layer successively; Be formed with transparency conducting layer on the p-GaN layer; And be formed separately N-shaped electrode and the p-type electrode on n-GaN layer and transparency conducting layer, wherein, p-GaN layer surface is provided with a plurality of alligatoring figures; Transparency conducting layer is provided with a plurality of perforate figures, makes all or part of alligatoring figure be exposed in this perforate figure.
The embodiment of the invention also discloses a kind of manufacture method of LED surface coarsening chip as above, wherein, its operating procedure comprises:
A), make successively n-GaN layer, luminescent layer and p-GaN layer, n-GaN layer, luminescent layer and p-GaN layer composition epitaxial loayer on substrate;
B), epitaxial loayer is carried out to the etching technics processing, obtain the PN step, this PN step makes part n-GaN layer expose surface;
C), the roughening process processing is carried out in p-GaN layer surface, obtain the p-GaN layer that its surface has a plurality of alligatoring figures;
D), at above-mentioned steps c) its surface of obtaining has on the p-GaN layer of a plurality of alligatoring figures and makes transparency conducting layer;
E), transparency conducting layer is carried out to the photoetching process processing, obtain having the transparency conducting layer of a plurality of perforate figures, make all or part of alligatoring figure be exposed in this perforate figure;
F), respectively at the n-GaN layer with have on the transparency conducting layer of a plurality of perforate figures and make N-shaped electrode and p-type electrode.
The embodiment of the present invention arranges the alligatoring figure by the p-GaN layer surface at LED chip, at transparency conducting layer, the perforate figure is set simultaneously, make all or part of alligatoring figure be exposed in this perforate figure, alligatoring structure has wherein possessed the surface coarsening effect to p-GaN layer and transparency conducting layer simultaneously, can effectively reduce or avoid total reflection phenomenon, and then the light extraction efficiency of raising LED chip, and simple in structure, easy to make, perforate figure wherein is owing to not participating in conduction, therefore can guarantee the electric current uniformity of transparency conducting layer, effectively avoid producing the ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantee the electric current injection efficiency of LED surface coarsening chip, finally effectively guarantee that the conversion efficiency of LED surface coarsening chip is improved, further, the manufacture method of the LED surface coarsening chip that the embodiment of the present invention proposes does not need to change the making forming technology of existing epitaxial loayer, simple and convenient, cost of manufacture is low, is beneficial to and carries out the scale production application.
In order to make those skilled in the art person understand better the technical scheme in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, should belong to the scope of protection of the invention.
Embodiment 1:
Shown in Figure 1, a kind of LED surface coarsening chip 100, LED chip comprises substrate (scheming not shown) and is formed in the epitaxial loayer on substrate, epitaxial loayer comprises n-GaN layer 110, luminescent layer (scheming not shown) and p-GaN layer (Fig. 1 is not shown) successively; Be formed with transparency conducting layer 120 on the p-GaN layer; And be formed separately N-shaped electrode 130 and the p-type electrode 140 on n-GaN layer 110 and transparency conducting layer 120.Preferably, the material of substrate is selected from any one in sapphire, carborundum, silicon, GaAs, gallium nitride, aluminium nitride and spinelle, and specifically preferably, in the present embodiment, the material of substrate is sapphire; Preferably, the material of transparency conducting layer 120 is selected from ITO(Indium tin oxide, tin indium oxide), ZnO, CdO, Cd
2snO
4in any one; Specifically preferably, in the present embodiment, the material of transparency conducting layer 120 is ITO.
Wherein, in the present embodiment, p-GaN layer surface is provided with a plurality of alligatoring figures (Fig. 1 is not shown), and transparency conducting layer 120 is provided with a plurality of perforate figures 121, makes whole alligatoring figures be exposed in this perforate figure 121.Preferably, perforate figure 121 is circle, ellipse or polygonal shape, natch, can also be other shapes, and the present embodiment is not done concrete restriction; Specifically preferably, in the present embodiment, perforate figure 121 is circular; Preferably, in the present embodiment, the bed-plate dimension of alligatoring figure is 300-500nm, and it is highly 200-300nm; The full-size of perforate figure 121 is 2-15 μ m, and the spacing between perforate figure 121 is 5-50 μ m; Preferably, perforate figure 121 is arranged and is honeycomb type or intersecting parallels shape, natch, can also be other shapes, and the present embodiment is not done concrete restriction.
Preferably, the gross area of perforate figure 121 accounts for the 5-25% of LED surface coarsening chip 100 total lighting areas; Specifically preferably, in the present embodiment, the gross area of perforate figure 121 accounts for 10% of LED surface coarsening chip 100 total lighting areas.
Preferably, a kind of manufacture method of LED surface coarsening chip 100 as above, wherein, its operating procedure comprises:
A), make successively n-GaN layer 110, luminescent layer and p-GaN layer on substrate, n-GaN layer 110, luminescent layer and p-GaN layer form epitaxial loayer, particularly, in the present embodiment, adopt MOCVD(Metal-organic Chemical Vapor Deposition, the metallo-organic compound chemical vapour deposition (CVD)) sedimentation is made epitaxial loayer, natch, also can adopt any one manufacture method of other sedimentations or existing known technology;
B), epitaxial loayer is carried out to the etching technics processing, obtain the PN step, this PN step makes part n-GaN layer 110 expose surface, particularly, in the present embodiment, to epitaxial loayer, adopt photoetching process to process, obtain the PN step, natch, also can adopt any one etching technics of existing known technology to process to epitaxial loayer;
C), the roughening process processing is carried out in p-GaN layer 150 surface, obtain the p-GaN layer 150 that its surface has a plurality of alligatoring figures 151, specifically comprise:
C10), make silicon dioxide film 160 on p-GaN layer 150 surface, particularly, in the present embodiment, adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) sedimentation is made silicon dioxide film 160, natch, also can adopt any one manufacture method of other sedimentations or existing known technology;
C20), shown in Figure 2, silicon dioxide film 160 is carried out to the photoetching process processing, obtain having the silicon dioxide film 160 of a plurality of perforate figures 121;
C30), shown in Figure 3, using above-mentioned steps c20) silicon dioxide film with a plurality of perforate figures 121 160 that obtains is as mask, in temperature, be under 200-300 ℃, adopt acid solution to carry out wet etching to p-GaN layer 150 surface, make p-GaN layer 150 surface that are positioned at perforate figure 121 places form respectively a plurality of alligatoring figures 151, specifically preferably, in the present embodiment, the temperature of wet etching is 230 ℃, the mixed acid solution that acid solution is phosphoric acid-sulfuric acid;
C40), the silicon dioxide film 160 with a plurality of perforate figures 121 is carried out to the photoetching process processing again, obtain having the silicon dioxide film of current blocking layer pattern, this silicon dioxide film is as current barrier layer, and current barrier layer is between p-GaN layer 150 and transparency conducting layer 120.
D), at above-mentioned steps c) its surface of obtaining has on the p-GaN layer 150 of a plurality of alligatoring figures 151 and makes transparency conducting layer 120, specifically preferably, in the present embodiment, adopt evaporation process to make transparency conducting layer 120, natch, also can adopt any one manufacture method of existing known technology;
E), transparency conducting layer 120 is carried out to the photoetching process processing, obtain having the transparency conducting layer 120 of a plurality of perforate figures 121, make whole alligatoring figures 151 be exposed in this perforate figure 121;
F), respectively at n-GaN layer 110 with have on the transparency conducting layer 120 of a plurality of perforate figures 121 and make N-shaped electrode 130 and p-type electrode 140, particularly, in the present embodiment, adopt in advance n-GaN layer 110 and the transparency conducting layer 120 with a plurality of perforate figures 121 are carried out to the figure that N-shaped electrode and p-type electrode are made respectively in the photoetching process processing, then by deposition, the technique such as evaporation or sputter is made N-shaped electrode 130 and the p-type electrode 140 of respective graphical, natch, also can adopt any one manufacture method of existing known technology to make N-shaped electrode and p-type electrode.
It should be noted that, because the perforate figure of silicon dioxide film 160 and the perforate figure of transparency conducting layer 120 are identical, therefore, in embodiments of the present invention, both adopt same Reference numeral, are perforate figure 121.
The this patent basic operational steps of related photoetching process processing in full mainly comprises: the coating photoresist is by exposure, develop, obtain thering is patterned photoresist layer after baking, then by wet method or dry etching, the figure of photoresist layer is transferred on the target base plate of being processed by photoetching process, make this target base plate obtain respective graphical, completing photoetching process processes, specifically can adopt existing any one known lithographic process, and the concrete technology parameter can be selected according to actual needs, believe routines selection that these all belong to those skilled in the art, all no longer concrete expansion repeats in this article.
In addition, all kinds of sedimentation related to for the embodiment of the present invention or vapour deposition method are conventional prior art, its concrete manufacture craft and parameter select equally all to belong to those skilled in the art's common practise or conventional the selection, and therefore, all equally no longer concrete expansion repeats in this article.
Through related experiment, detect, alligatoring graphic structure in the LED surface coarsening chip 100 that the embodiment of the present invention provides is due to the total reflection phenomenon that has reduced chip surface, under unit are, can improve the chip surface bright dipping of 20%-30%, the gross area (being the area sum of perforate figure) due to perforate figure 121 accounts for 10% of LED surface coarsening chip 100 total lighting areas again, the light extraction efficiency of LED surface coarsening chip 100 has improved 2-3%, natch, in other embodiments, can also be by changing shape and the area of perforate figure, further improve the light extraction efficiency of LED surface coarsening chip, simultaneously because perforate figure 121 does not participate in conduction, therefore the wet etching making is carried out in p-GaN layer 150 surface and obtain the electric current uniformity that alligatoring figure 151 can not affect transparency conducting layer 120, thereby avoid producing the ohmic contact problem between transparency conducting layer 120 and p-GaN layer 150, and then guarantee the electric current injection efficiency of LED surface coarsening chip 100, finally effectively guarantee that the conversion efficiency of LED surface coarsening chip 100 is improved.
Simultaneously, the LED surface coarsening chip 100 that the embodiment of the present invention provides only needs increase once silicon dioxide film 160 to be carried out to the photoetching process processing with respect to conventional LED chip, obtain having the silicon dioxide film 160 of perforate figure 121, in temperature, be under 230 ℃ simultaneously, adopt the mixed acid solution of phosphoric acid-sulfuric acid to carry out wet etching to p-GaN layer 150 surface, can form alligatoring figure 151 on p-GaN layer 150 surface, this silicon dioxide film 160 is processed and also be can be used as current barrier layer simultaneously through photoetching process simultaneously, do not need to change the making forming technology of existing epitaxial loayer, simple and convenient, cost of manufacture is low, be beneficial to and carry out the scale production application.
Embodiment 2:
In order further to simplify manufacture craft of the present invention, according to actual needs, the present invention also provides embodiment 2.All the other are identical with embodiment 1 for the present embodiment 2, and difference only is step c), specifically comprises:
C), the roughening process processing is carried out in p-GaN layer surface, obtain the p-GaN layer that its surface has a plurality of alligatoring figures, specifically comprise: in temperature, be under 200-300 ℃, adopt acid solution to carry out wet etching to p-GaN layer surface, make p-GaN layer surface form a plurality of alligatoring figures, specifically preferably, in the present embodiment, the temperature of wet etching is 230 ℃, the mixed acid solution that acid solution is phosphoric acid-sulfuric acid.
All the other operating procedures of the present embodiment 2 can be referring to above-described embodiment 1, and the present embodiment 2, after step e), makes part alligatoring figure be exposed in this perforate figure.
Shown in Figure 1 equally, the present embodiment 2 provides a kind of LED surface coarsening chip 100, LED chip comprises substrate (scheming not shown) and is formed in the epitaxial loayer on substrate, and epitaxial loayer comprises n-GaN layer 110, luminescent layer (scheming not shown) and p-GaN layer (Fig. 1 is not shown) successively; Be formed with transparency conducting layer 120 on the p-GaN layer; And be formed separately N-shaped electrode 130 and the p-type electrode 140 on n-GaN layer 110 and transparency conducting layer 120.Wherein, in the present embodiment, p-GaN layer surface is provided with a plurality of alligatoring figures (Fig. 1 is not shown), and transparency conducting layer 120 is provided with a plurality of perforate figures 121, makes part alligatoring figure be exposed in this perforate figure 121, and all the other are all with embodiment 1.
The present embodiment 2 is with respect to embodiment 1, avoided adopting and making in advance silicon dioxide film as techniques such as mask and photoetching process processing in step c), can simplify manufacture craft, and the alligatoring figure is carved and is arranged on equably on the p-GaN layer, therefore light extraction efficiency generally more is better than embodiment 1, but the LED surface coarsening chip 100 provided due to the present embodiment 2 only is exposed in this perforate figure 121 for part alligatoring figure, still some alligatoring figure directly contacts with transparency conducting layer 120, thereby still there is an ohmic contact problem between some transparency conducting layers 120 and p-GaN layer 150, therefore the electric current injection efficiency of the present embodiment 2 is inferior to embodiment 1, therefore, those skilled in the art can select to implement different embodiment according to the actual requirements.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and in the situation that do not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limit related claim.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme in each embodiment also can, through appropriate combination, form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a LED surface coarsening chip, described LED chip comprises substrate and is formed in the epitaxial loayer on described substrate, described epitaxial loayer comprises n-GaN layer, luminescent layer and p-GaN layer successively; Be formed with transparency conducting layer on described p-GaN layer; And be formed separately N-shaped electrode and the p-type electrode on described n-GaN layer and described transparency conducting layer, and it is characterized in that, described p-GaN layer surface is provided with a plurality of alligatoring figures; Described transparency conducting layer is provided with a plurality of perforate figures, makes all or part of alligatoring figure be exposed in this perforate figure.
2. LED surface coarsening chip as claimed in claim 1, is characterized in that, described perforate figure is circle, ellipse or polygonal shape.
3. LED surface coarsening chip as claimed in claim 1, is characterized in that, the full-size of described perforate figure is 2-15 μ m, and the spacing between described perforate figure is 5-50 μ m.
4. LED surface coarsening chip as claimed in claim 1, is characterized in that, described perforate pattern arrangement is honeycomb type or intersecting parallels shape.
5. LED surface coarsening chip as claimed in claim 1, is characterized in that, the gross area of described perforate figure accounts for the 5-25% of the total lighting area of described LED surface coarsening chip.
6. LED surface coarsening chip as claimed in claim 1, is characterized in that, the material of described transparency conducting layer is selected from ITO, ZnO, CdO, Cd
2snO
4in any one.
7. LED surface coarsening chip as claimed in claim 1, is characterized in that, the material of described substrate is selected from any one in sapphire, carborundum, silicon, GaAs, gallium nitride, aluminium nitride and spinelle.
8. the manufacture method of a described LED surface coarsening chip as any as claim 1-7, is characterized in that, its operating procedure comprises:
A), make successively n-GaN layer, luminescent layer and p-GaN layer, described n-GaN layer, luminescent layer and p-GaN layer composition epitaxial loayer on substrate;
B), described epitaxial loayer is carried out to the etching technics processing, obtain the PN step, this PN step makes part n-GaN layer expose surface;
C), the roughening process processing is carried out in described p-GaN layer surface, obtain the p-GaN layer that its surface has a plurality of alligatoring figures;
D), at above-mentioned steps c) its surface of obtaining has on the p-GaN layer of a plurality of alligatoring figures and makes transparency conducting layer;
E), described transparency conducting layer is carried out to the photoetching process processing, obtain having the transparency conducting layer of a plurality of perforate figures, make all or part of alligatoring figure be exposed in this perforate figure;
F), make N-shaped electrode and p-type electrode respectively on described n-GaN layer and the described transparency conducting layer with a plurality of perforate figures.
9. the manufacture method of LED surface coarsening chip as claimed in claim 8, is characterized in that, described step c) specifically comprises:
C10), make silicon dioxide film on described p-GaN layer surface;
C20), described silicon dioxide film is carried out to the photoetching process processing, obtain having the silicon dioxide film of a plurality of perforate figures;
C30), using above-mentioned steps c20) silicon dioxide film with a plurality of perforate figures that obtains is as mask, and dry method or wet etching are carried out in described p-GaN layer surface, makes the p-GaN layer surface that is positioned at perforate figure place form respectively a plurality of alligatoring figures;
C40), the described silicon dioxide film with a plurality of perforate figures is carried out to the photoetching process processing again, obtain having the silicon dioxide film of current blocking layer pattern, this silicon dioxide film is as current barrier layer, and described current barrier layer is between described p-GaN layer and described transparency conducting layer.
10. the manufacture method of LED surface coarsening chip as claimed in claim 9, it is characterized in that, described step c30) being: using above-mentioned steps c20) silicon dioxide film with a plurality of perforate figures that obtains is as mask, in temperature, be under 200-300 ℃, adopt acid solution to carry out wet etching to described p-GaN layer surface, make the p-GaN layer surface that is positioned at perforate figure place form respectively a plurality of alligatoring figures.
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