CN204441323U - Flip LED chips - Google Patents
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- CN204441323U CN204441323U CN201520009023.9U CN201520009023U CN204441323U CN 204441323 U CN204441323 U CN 204441323U CN 201520009023 U CN201520009023 U CN 201520009023U CN 204441323 U CN204441323 U CN 204441323U
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Abstract
The utility model provides a kind of flip LED chips, comprising: substrate; Epitaxial loayer, is arranged on described substrate; Transparency conducting layer, is arranged on described epitaxial loayer; Electrode and pad, be arranged on described transparency conducting layer end face, also comprise Prague insulative reflective layer, and described Prague insulative reflective layer is arranged between described electrode and described pad.The flip LED chips that the utility model provides substitutes conventional metallic reflector with Bragg reflecting layer (DBR), avoid the problem that flip LED chips leakage rate is high, light decay is serious caused when using Ag, adopt branch strip-like electrode structures to compare tradition and open the flip chip structure that VIA pore structure makes P electrode and N electrode, CURRENT DISTRIBUTION evenly, the yield of the flip LED chips structure that the utility model is provided is high, uniformity of luminance is good, product reliability is high, particularly evident on middle low power chip.
Description
Technical field
The utility model relates to LED (light-emitting diode) chip field, especially, relates to a kind of flip LED chips.
Background technology
Semiconductor lighting is with energy-conservation, and environmental protection, the advantages such as brightness is high, and the life-span is long, become the focus of social development.GaN base LED chip is semiconductor lighting " core drive ", and performance is increased dramatically in recent years, and production cost also constantly reduces, and comes into huge numbers of families make outstanding contributions for semiconductor lighting.
The market demand and improve a kind of powerful actuating force that the cost performance of product is technical development tendency to meet this demand.A kind of product often comprehensively will use multiple technologies, and therefore the balanced growth of multiple technologies just can make a kind of integrated performance index of product meet the demand of client.
Using Ag metal level as reflector in current flip LED chips epitaxial loayer, but Ag metal is easy to diffusion and reunites in LED chip, causes gained LED chip leakage rate and the high problem of light decay.In order to avoid the problems referred to above, the protective layer metal that expensive sputter coating board evaporation must be used very fine and close when growing chip.If protective layer to Ag layer cover bad, chip will become unstable.
Utility model content
The utility model provides a kind of flip LED chips, to solve the technical problem that in prior art, flip LED chips leakage rate is high, brightness is low.
According to an aspect of the present utility model, provide a kind of flip LED chips, a kind of flip LED chips, comprising: substrate; Epitaxial loayer, is arranged on substrate; Transparency conducting layer, is arranged on epitaxial loayer; Pad, be arranged on transparency conducting layer end face, also comprise Prague insulative reflective layer, Prague insulative reflective layer is arranged between transparency conducting layer and pad.
Further, also comprise N-type GaN layer, quantum well layer and P type GaN layer, N-type GaN layer, quantum well layer and P type GaN layer are stacked and placed on substrate successively, and transparency conducting layer is arranged on the end face of P type GaN layer.
Further, also comprise N-type electrode and P-type electrode, the side of flip LED chips is N-type region territory, and another opposite side is territory, p type island region, is insulating regions between N-type region territory and territory, p type island region, and N-type electrode is arranged on the N-type GaN layer end face in N-type region territory; P-type electrode is arranged on the transparency conducting layer end face of territory, p type island region and insulating regions.
Further, in N-type region territory, quantum well layer, P type GaN layer and transparency conducting layer local is through being etched to N-type GaN layer, gap-forming first post and the second post; N-type electrode comprises spaced first N-type electrode and the second N-type electrode, first N-type electrode is arranged between the first post and the second post, P-type electrode comprises spaced first P-type electrode and the second P-type electrode, first P-type electrode is arranged at insulating regions, and the second P-type electrode is arranged at territory, p type island region.
Further, Prague insulative reflective layer is arranged on the sidewall of the first post, the second post and insulating regions, and Prague insulative reflective layer to be also arranged in the end face of the first P-type electrode and the first P-type electrode on the sidewall of the second post.
Further, Prague insulative reflective layer to be also arranged in the two opposite side walls of the second P-type electrode, in territory, p type island region on transparency conducting layer end face and sidewall.
Further, pad comprises spaced P type pad and N-type pad, and N-type pad contacts with N-type electrode; P type pad contacts with P-type electrode.
Another aspect of the present utility model additionally provides a kind of flip LED chips, comprising: substrate; Epitaxial loayer, is arranged on substrate; Transparency conducting layer, is arranged on epitaxial loayer; Pad, be arranged on transparency conducting layer end face, also comprise Prague insulative reflective layer, P-type electrode and N-type electrode, Prague insulative reflective layer is arranged between transparency conducting layer and pad; N-type electrode also comprises strip N-type electrode, and the horizontal expansion in flip LED chips of strip N-type electrode is formed; P-type electrode also comprises strip P-type electrode, and the horizontal expansion in flip LED chips of strip P-type electrode is formed.
Further, strip N-type electrode is provided with the column column N-type electrode that longitudinal extension is formed in epitaxial loayer; Strip P-type electrode is provided with the column column P-type electrode that longitudinal extension is formed in epitaxial loayer.
Further, the width of strip N-type electrode and strip P-type electrode is 0.5 ~ 20um.
The utility model has following beneficial effect:
1. substitute conventional metallic reflector with Bragg reflecting layer (DBR) in the flip LED chips epitaxial loayer that the utility model provides, avoid the problem that flip LED chips leakage rate is high, light decay is serious caused when using Ag; Adopt branch strip-like electrode structures to compare tradition and open the flip chip structure that VIA pore structure makes P electrode and N electrode, CURRENT DISTRIBUTION evenly, the yield of the flip LED chips structure that the utility model is provided is high, and uniformity of luminance is good, product reliability is high, particularly evident on middle low power chip.
2. simultaneously DBR layer is that insulating material is made, and between the layer being arranged at double layer of metal material, plays the effect of insulating medium layer; without the need to preparing Ag protective layer in production process, facilitating chip making technology, shortens the flow time; do not need to buy expensive metal sputtering board, significantly reduce costs.
3. each electrode in the flip LED chips that provides of the utility model is that branch shape is arranged on the end face of flip LED chips, make the moving areas of electric current in LED chip larger, improve electric current difference uniformity in the chips and diffusion area, improve luminosity.
Except object described above, feature and advantage, the utility model also has other object, feature and advantage.Below with reference to figure, the utility model is described in further detail.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the schematic top plan view after the flip LED chips reversion of the utility model preferred embodiment;
Fig. 2 is the cross-sectional schematic (hatched parts omission) along Figure 1A-A line;
Fig. 3 is the LED chip schematic top plan view of the utility model preferred embodiment; And
Fig. 4 is the LED chip schematic top plan view of the utility model preferred embodiment;
Fig. 5 is the LED chip schematic top plan view of the utility model preferred embodiment;
Fig. 6 is the LED chip schematic top plan view of the utility model preferred embodiment.
Marginal data:
1, substrate; 2, N-type GaN layer; 3, quantum well layer; 4, P type GaN layer; 5, transparency conducting layer; 6, Bragg reflection insulating barrier; 71, the first N-type electrode; 72, the second N-type electrode; 73, strip N-type electrode; 81, the first P-type electrode; 82, the second P-type electrode; 83, strip P-type electrode; 10, P type pad; 11, N-type pad; 101, the first post; 102, the second post.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail, but the multitude of different ways that the utility model can be defined by the claims and cover is implemented.
Chip power is greater than 1W is herein high-power chip.Chip power is less than the chip of 1W, and such as 0.5W, 0.2W, 0.06W are called small-power chip or middle low power chip.Epitaxial loayer refers to the conventional overlapped layers be arranged on substrate herein, as being arranged at the N-type GaN layer, quantum well layer, P type GaN layer etc. on substrate, is certainly not limited to this, but all kinds of conventional epitaxial layer structure in this area.
The flip LED chips that the utility model provides as depicted in figs. 1 and 2, comprises substrate 1, N-type GaN layer 2, quantum well layer 3, P type GaN layer 4, transparency conducting layer 5, Bragg reflection insulating barrier 6, N-type electrode, P-type electrode, P type pad 10 and N-type pad 11.Substrate 1 can be the conventional substrate such as Sapphire Substrate, silicon carbide substrates.Substrate 1 end face covers N-type GaN layer 2.N-type GaN layer 2 end face covers quantum well layer 3.Quantum well layer 3 end face covers P type GaN layer 4.P type GaN layer 4 end face covers transparency conducting layer 5.In a side region of flip LED chips, carry out etching processing, quantum well layer 3 stacked in this region, P type GaN layer 4 and transparency conducting layer 5 partial etching are removed.Leave first post 101 and second post 102 be arranged on N-type GaN layer 2 end face at interval.First post 101 and the second post 102 grow the first N-type electrode 71 of column.Gap between second post 102 and non-etching area exposes N-type GaN layer 2 after etching processing, and this gap grows another column second N-type electrode 72.
For ease of illustrate following by flip LED chips people for being divided into N-type region territory, insulating regions and territory, p type island region.N-type region territory and territory, p type island region are relatively arranged on the two ends of flip LED chips machined surface.When flip LED chips is rectangle, circle or polygon, this two region is still arranged at intervals at two opposite ends of flip LED chips.N-type region arranges N-type electrode in territory.P type island region arranges P-type electrode in territory.Insulating regions is used for N-type region territory, interval and territory, p type island region.Insulating regions end face covers insulating barrier, the energized part of chip internal is closed.
Etching processing is not carried out in the remaining region of flip LED chips, the end face of transparency conducting layer 5 grows the first P-type electrode 81.The etching processing for the first P-type electrode 81 is carried out in the side of flip LED chips, forms the first P-type electrode 81.On transparency conducting layer 5 end face in N-type region territory and on the sidewall of the first post 101 and the second post 102, Bragg reflection insulating barrier 6 is set.First P-type electrode 81 end face and sidewall thereof of the insulating regions without etching processing arrange Bragg reflection insulating barrier 6.Between first P-type electrode 81 and the second P-type electrode 82 in territory, p type island region and sidewall is arranged Bragg reflection insulating barrier 6.And Bragg reflection insulating barrier 6 is set on the sidewall of overseas side, p type island region.The end face of the Bragg reflection insulating barrier 6 in N-type region territory arranges N-type pad 11.N-type pad 11 is covered in the first N-type electrode 71 and the second N-type electrode 72 for being energized to N-type electrode.Bragg reflection insulating barrier 6 end face in territory, p type island region arranges P type pad 10.Because Bragg reflection insulating barrier 6 interval between territory, p type island region and insulating regions is arranged, thus blank P type pad 10 can be contacted with the second P-type electrode 82 with the first P-type electrode 81, so that P type pad 10 is to the two energising.
Bragg reflection insulating barrier 6 is distributed Blatt reflective film system, DBR film system comprises the different dielectric material of two kinds of refractive indexes, bi-material forms stacked layer, and if the first material is A layer, the second material is for both B layers are with ABABAB ... the staggered growth of form is formed.Semicon industry obtains the rete a certain optical region to high reflectance with this usually.For grow DBR layer bi-material between refractive index difference larger, then the reflection bandwidth of gained DBR layer is wider, and the logarithm reaching the stacked growth different material layer required for high reflectance is fewer.The utility model passes through color and luster Bragg reflection insulating barrier 6 in the structure shown here, utilizes the reflex that it has, plays the effect identical with metallic reflector.Simultaneously because Bragg reflection insulating barrier 6 is made for-SiO2, thus not there is electric action, the insulating barrier of Bragg reflection simultaneously 6 can also when covering the first P-type electrode 81 and preventing it from leaking electricity, isolated P type pad 10 and N-type pad 11, the two electric current is prevented to be connected, cause the generation of leaking electricity, thus reduce the leakage rate of gained flip LED chips.
In another embodiment, flip LED chips only comprises Prague insulative reflective layer be arranged between transparency conducting layer 5 and pad.Other structures can adjust according to the actual needs of grown LED chip.Substitute reflector and insulating barrier with bragg layer, decrease growth operation, improve and efficiency is set, add product stability.
In another embodiment, the substrate 1 in this flip LED chips and sequentially stacked N-type GaN layer 2, quantum well layer 3 and P type GaN layer 4 between transparency conducting layer 5.To make it play conventional effects.
In another embodiment, N-type electrode only arranges one or can arrange multiple as required, and N-type electrode carries out being arranged on N-type GaN layer 2 end face in N-type region territory.Be convenient to adjustment.P-type electrode is arranged on transparency conducting layer 5 end face of territory, p type island region and insulating regions.The quantity of electrode and shape thereof can adjust according to actual needs.
In another embodiment, pad only need contact with respective electrode, the exposed surface of electrode and equivalent layer thereof is provided with Prague insulative reflective layer to play insulating effect.Simplify growth technique.
See Fig. 3 and 4, the utility model additionally provides a kind of flip LED chips on the other hand, and this LED chip comprises substrate 1; Be arranged at the epitaxial loayer on substrate 1; Transparency conducting layer 5, is arranged on substrate 1; Pad, is arranged on transparency conducting layer 5 end face.Also comprise Prague insulative reflective layer, P-type electrode and N-type electrode, Prague insulative reflective layer is arranged between transparency conducting layer 5 and pad.N-type electrode also comprises strip N-type electrode 73, and strip N-type electrode 73 horizontal expansion in flip LED chips is formed; P-type electrode also comprises strip P-type electrode 83, and strip P-type electrode 83 horizontal expansion in flip LED chips is formed.Strip shaped electric poles extends in inside, LED chip top layer can improve the distributing homogeneity of electric current in LED chip.
In another embodiment, strip N-type electrode 73 is provided with the column column N-type electrode that longitudinal extension is formed in epitaxial loayer; Strip P-type electrode 83 is provided with the column column P-type electrode that longitudinal extension is formed in epitaxial loayer.This columnar electrode can improve electric current LED chip longitudinally on distribution, now combine upper strip shaped electric poles, the two matches thus to improve in electrode electric current in the overall distribution uniformity of LED chip inside.
Wherein a kind of embodiment be N-type electrode comprise the first N-type electrode 71, first N-type electrode 71 be column in epitaxial loayer longitudinal extension formed.It is that column longitudinal extension in epitaxial loayer is formed that P-type electrode comprises the first P-type electrode 81, first P-type electrode 81.Electrode longitudinal extension in epitaxial loayer can improve the genesis analysis uniformity of electric current in epitaxial loayer.
In another embodiment, N-type electrode also comprises the second N-type electrode 72, second N-type electrode 72 longitudinal extension in epitaxial loayer and is formed, and the side of the second N-type electrode 72 is along the horizontal formation strip N-type electrode 73 that stretches out of flip LED chips simultaneously.P-type electrode also comprises the second P-type electrode 82 longitudinal extension in epitaxial loayer and is formed, and the side of the second P-type electrode 82 is along the horizontal formation strip P-type electrode 83 that stretches out of flip LED chips simultaneously.In LED chip, set up the strip N, the P electrode that extend to form along LED chip both sides, the electric current distributing homogeneity wherein passed in LED chip can be improved, improve the flow range of electric current, thus improve luminous intensity and the brightness of chip.The object of strip shaped electric poles is wherein the electric current slabbing distribution in the chips made wherein, thus improves luminous efficiency, and whether the list structure of two comparative electrodes is parallel to each other unimportant.The width of preferred strip N-type electrode 73 and adjustment strip P-type electrode 83 is 0.5 ~ 20um.Now current distribution uniformity reaches optimum.
See Fig. 5, in another embodiment, the both sides of strip N-type electrode 73 arrange two strip P-type electrode 83. threes respectively and be arranged in parallel.Strip N-type electrode 73 is connected with column N-type electrode.One end of strip P-type electrode 83 is connected with column P-type electrode.
See Fig. 6, in another embodiment, strip N-type electrode 73 is arranged along the periphery of rectangular LED chip, and its region inside arranges strip P-type electrode 83.Because electric current dead angle easily appears in the drift angle place of rectangular LED chip, therefore four drift angle places that four of strip N-type electrode 73 drift angle places arrange column N-type electrode and/or strip P-type electrode 83 arrange column P-type electrode.Improve the CURRENT DISTRIBUTION in the overall vertical and horizontal region of chip.
In another embodiment, flip LED chips only comprises Prague insulative reflective layer be arranged between transparency conducting layer 5 and pad.Other structures can adjust according to the actual needs of grown LED chip.Substitute reflector and insulating barrier with bragg layer, decrease growth operation, improve and efficiency is set, add product stability.
In another embodiment, the substrate 1 in this flip LED chips and sequentially stacked N-type GaN layer 2, quantum well layer 3 and P type GaN layer 4 between transparency conducting layer 5.To make it play conventional effects.
In another embodiment, N-type electrode only arranges one or can arrange multiple as required, and N-type electrode carries out being arranged on N-type GaN layer 2 end face in N-type region territory.Be convenient to adjustment.P-type electrode is arranged on transparency conducting layer 5 end face of territory, p type island region and insulating regions.The quantity of electrode and shape thereof can adjust according to actual needs.
In another embodiment, pad only need contact with respective electrode, the exposed surface of electrode and equivalent layer thereof is provided with Prague insulative reflective layer to play insulating effect.Simplify growth technique.
The flip LED chips epitaxial loayer preparation method that the utility model provides comprises the following steps:
1, thoroughly clean epitaxial wafer, this epitaxial wafer is that this sapphire thickness is 420-440 micron, and GaN layer is 6-9 micron at the epitaxial wafer with GaN base LED chip construction of the upper growth of sapphire pattern substrate (PSS);
2, etched by gold-tinted photoetching, inductance even summation plasma (ICP), the steps such as cleaning of removing photoresist produce MESA luminous zone table top, expose N-type GaN in wafer frontside, the gas of wherein ICP etching is Cl
2, BCl
3, Ar, ICP etch depth is 1.2-1.6 micron;
3, adopt the mode of electron beam evaporation or sputtering (sputter) to make transparency conducting layer 5 after cleaning, wherein transparency conducting layer 5 material is tin indium oxide (ITO), and the thickness of this transparency conducting layer is 35-240 nanometer;
4, use high temperature furnace pipe or quick anneal oven (RTA) to anneal, form the ohmic contact of transparency conducting layer 5 and P type GaN 4, wherein annealing temperature is 520-560 DEG C;
5, make ground floor P-type electrode and N electricity electrode by photoetching, the modes such as glue, evaporation, stripping of sweeping, this P, N-type electrode line structure are Cr/AL/Cr/Pt/Au/Ni or Ni/AI//Ni/Au/Ni, and after completing this step, chip structure is as Fig. 3;
6, make distributed Bragg reflecting layer (DBR layer) by ion assisted deposition method, simultaneously by photoetching, peel off, the steps such as cleaning of removing photoresist expose ground floor P, N-type electrode respectively; The high-index material of DBR layer is Ti3O5, low-index material is SiO
2, DBR is divided into into 29 layers;
7, the material making P type bonding pad 10 and N-type bonding pad 11, P, N-type electrode and pad by sweeping the modes such as glue, evaporation, stripping is Cr/AL/Cr/Pt/Au or Ni/AI/Cr/Ni/Au, and does annealing in process to metal level;
8, through operations such as grinding, polishing, cutting, splittings, form light-emitting diode chip for backlight unit, wherein after polishing, chip thickness is 120 ~ 160 microns.
In embodiment, each chip is prepared all as stated above.The preparation method of comparative example and embodiment chips distinguishes and is, does not arrange Prague insulative reflective layer in comparative example, substitutes with Ag layer and the insulating barrier be arranged on Ag layer end face.In growth course, also needed to protect it before growth Ag layer.Grow all according to a conventional method.It is different that table 1 and difference in the preparation process of chip each in table 2 are whether add fluorescent material.Other are all identical.
Gained LED chip carries out detection acquired results according to a conventional method and lists in table 1 and table 2.
Table 1 the utility model encapsulation gained blue chip properties table (not mixing fluorescent material)
Table 2 the utility model encapsulation gained white chip properties table (mixing fluorescent material)
From table 1 and table 2 result, in table 1, for the chip of 8milx25mil, under 60mA drives, the conventional flip-chip brightness of opening VIA pore structure making P electrode and N electrode is adopted to be 64mW, the utility model method adopts branch electrode structure to make P electrode and N electrode, and current spreading effect is good, and brightness can arrive 80mW.The utility model is adopted to provide the LED chip of the Φ e (brightness) of the LED chip of structure far above using metallic reflector to obtain.
In table 2, the utility model is adopted to provide the Φ of the LED chip of structure (brightness) far above using the LED chip opened VIA pore electrod structure and obtain.Illustrate that the LED chip that the utility model provides has the effect improving chip brightness.
LED flip chip in comparative example is with Ag layer for reflector, and comprehensive yield is generally only about 85%.Having the utility model provides the comprehensive yield of the LED chip of structure to be 95%, far above the chip being reflector with Ag layer.
To sum up, with compared with conventional LED flip chip manufacture method, the flip-chip manufacture method that the utility model proposes has: cost is low, and operation is simple, and stable performance, comprehensive yield is high, chip brightness advantages of higher.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (10)
1. a flip LED chips, comprising:
Substrate;
Epitaxial loayer, is arranged on described substrate;
Transparency conducting layer, is arranged on described epitaxial loayer;
Pad, is arranged on described transparency conducting layer end face, it is characterized in that, also comprise Prague insulative reflective layer, and described Prague insulative reflective layer is arranged between described transparency conducting layer and described pad.
2. flip LED chips according to claim 1, it is characterized in that, also comprise N-type GaN layer, quantum well layer and P type GaN layer, described N-type GaN layer, described quantum well layer and described P type GaN layer are stacked and placed on described substrate successively, and described transparency conducting layer is arranged on the end face of described P type GaN layer.
3. flip LED chips according to claim 2, is characterized in that, also comprises N-type electrode and P-type electrode, and the side of described flip LED chips is N-type region territory, and another opposite side is territory, p type island region, is insulating regions between described N-type region territory and territory, described p type island region,
Described N-type electrode is arranged on the described N-type GaN layer end face in described N-type region territory;
Described P-type electrode is arranged on the described transparency conducting layer end face of territory, described p type island region and described insulating regions.
4. flip LED chips according to claim 3, is characterized in that, in described N-type region territory, described quantum well layer, described P type GaN layer and described transparency conducting layer local is through being etched to described N-type GaN layer, gap-forming first post and the second post;
Described N-type electrode comprises spaced first N-type electrode and the second N-type electrode, and described first N-type electrode is arranged between described first post and the second post,
Described P-type electrode comprises spaced first P-type electrode and the second P-type electrode,
Described first P-type electrode is arranged at described insulating regions,
Described second P-type electrode is arranged at territory, described p type island region.
5. flip LED chips according to claim 3, it is characterized in that, described Prague insulative reflective layer is arranged on the sidewall of described first post, described second post and described insulating regions, and described Prague insulative reflective layer to be also arranged in the end face of described first P-type electrode and described first P-type electrode on the sidewall of described second post.
6. flip LED chips according to claim 5, is characterized in that, described Prague insulative reflective layer to be also arranged in the two opposite side walls of described second P-type electrode, in territory, described p type island region on described transparency conducting layer end face and sidewall.
7. flip LED chips according to claim 4, is characterized in that, described pad comprises spaced P type pad and N-type pad, and described N-type pad contacts with described N-type electrode; Described P type pad contacts with described P-type electrode.
8. a flip LED chips, comprising:
Substrate;
Epitaxial loayer, is arranged on described substrate;
Transparency conducting layer, is arranged on described epitaxial loayer;
Pad, is arranged on described transparency conducting layer end face, it is characterized in that, also comprise Prague insulative reflective layer, P-type electrode and N-type electrode, and described Prague insulative reflective layer is arranged between described transparency conducting layer and described pad;
Described N-type electrode also comprises strip N-type electrode, and the horizontal expansion in described flip LED chips of described strip N-type electrode is formed;
Described P-type electrode also comprises strip P-type electrode, and the horizontal expansion in described flip LED chips of described strip P-type electrode is formed.
9. flip LED chips according to claim 8, is characterized in that,
Described strip N-type electrode is provided with the column column N-type electrode that longitudinal extension is formed in described epitaxial loayer;
Described strip P-type electrode is provided with the column column P-type electrode that longitudinal extension is formed in described epitaxial loayer.
10. flip LED chips according to claim 9, is characterized in that, the width of described strip N-type electrode and described strip P-type electrode is 0.5 ~ 20um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520009023.9U CN204441323U (en) | 2015-01-07 | 2015-01-07 | Flip LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520009023.9U CN204441323U (en) | 2015-01-07 | 2015-01-07 | Flip LED chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204441323U true CN204441323U (en) | 2015-07-01 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006508A (en) * | 2015-07-02 | 2015-10-28 | 厦门市三安光电科技有限公司 | Light emitting diode packaging structure |
| CN106159043A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | Flip LED chips and forming method thereof |
| CN109149361A (en) * | 2018-10-10 | 2019-01-04 | 南京工程学院 | A kind of vertical-cavity surface-emitting silicon substrate GaN laser and preparation method thereof based on dielectric Bragg mirror |
| CN109545816A (en) * | 2018-11-23 | 2019-03-29 | 江苏新广联半导体有限公司 | A kind of upside-down mounting GaN base LED micro-display device and preparation method thereof |
| CN113644176A (en) * | 2021-07-29 | 2021-11-12 | 厦门三安光电有限公司 | LED chip |
| CN114023867A (en) * | 2021-10-19 | 2022-02-08 | 武汉大学 | Full-color Micro-LED display panel and manufacturing method thereof |
-
2015
- 2015-01-07 CN CN201520009023.9U patent/CN204441323U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159043A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | Flip LED chips and forming method thereof |
| CN106159043B (en) * | 2015-04-01 | 2019-12-13 | 映瑞光电科技(上海)有限公司 | Flip LED chip and forming method thereof |
| CN105006508A (en) * | 2015-07-02 | 2015-10-28 | 厦门市三安光电科技有限公司 | Light emitting diode packaging structure |
| CN105006508B (en) * | 2015-07-02 | 2017-07-25 | 厦门市三安光电科技有限公司 | Package structure for LED |
| CN109149361A (en) * | 2018-10-10 | 2019-01-04 | 南京工程学院 | A kind of vertical-cavity surface-emitting silicon substrate GaN laser and preparation method thereof based on dielectric Bragg mirror |
| CN109545816A (en) * | 2018-11-23 | 2019-03-29 | 江苏新广联半导体有限公司 | A kind of upside-down mounting GaN base LED micro-display device and preparation method thereof |
| CN113644176A (en) * | 2021-07-29 | 2021-11-12 | 厦门三安光电有限公司 | LED chip |
| CN114023867A (en) * | 2021-10-19 | 2022-02-08 | 武汉大学 | Full-color Micro-LED display panel and manufacturing method thereof |
| CN114023867B (en) * | 2021-10-19 | 2024-07-26 | 江苏穿越光电科技有限公司 | Full-color Micro-LED display panel and manufacturing method thereof |
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