CN103456855B - A kind of LED surface coarsening chip and preparation method - Google Patents
A kind of LED surface coarsening chip and preparation method Download PDFInfo
- Publication number
- CN103456855B CN103456855B CN201310424414.2A CN201310424414A CN103456855B CN 103456855 B CN103456855 B CN 103456855B CN 201310424414 A CN201310424414 A CN 201310424414A CN 103456855 B CN103456855 B CN 103456855B
- Authority
- CN
- China
- Prior art keywords
- layer
- gan layer
- perforate
- figures
- transparency conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 41
- 238000012545 processing Methods 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000011017 operating method Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 13
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 description 94
- 238000005516 engineering process Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- YXJYBPXSEKMEEJ-UHFFFAOYSA-N phosphoric acid;sulfuric acid Chemical compound OP(O)(O)=O.OS(O)(=O)=O YXJYBPXSEKMEEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229930188970 Justin Natural products 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Abstract
The invention discloses a kind of LED surface coarsening chip and preparation method, described LED chip comprises substrate and is formed in the epitaxial layer on described substrate, and described epitaxial layer comprises n-GaN layer, luminescent layer and p-GaN layer successively; On described p-GaN layer, be formed with transparency conducting layer; And be formed separately N-shaped electrode and the p-type electrode on described n-GaN layer and described transparency conducting layer, wherein, described p-GaN layer surface is provided with multiple alligatoring figures; Described transparency conducting layer is provided with multiple perforate figures, and all or part of alligatoring figure is exposed in this perforate figure; The present invention can effectively reduce or avoid total reflection phenomenon, and then the light extraction efficiency of raising LED chip, can avoid again producing the Ohmic contact problem between transparency conducting layer and p-GaN layer simultaneously, and then guarantee the electric current injection efficiency of LED chip, finally effectively guarantee that the conversion efficiency of LED chip is improved.
Description
Technical field
The present invention relates to a kind of LED chip, be specifically related to a kind of LED surface coarsening chip and makingMethod.
Background technology
As everyone knows, conversion efficiency=electric current injection efficiency × internal quantum efficiency of LED chip × go out light efficiencyRate; Wherein, internal quantum efficiency is mainly determined by growth technology and the epitaxial material characteristic of LED chipFixed, as the LED chip that adopts GaN epitaxial material to make can reach 99% at present, substantially approach itTheoretical limit situation, causes that the raising of internal quantum efficiency has not had larger space; Electric current injection efficiency masterDepend on electrode design and the Ohmic contact of LED chip, the electric current of at present good LED chip injectsEfficiency also can reach more than 98%; And light extraction efficiency is mainly by LED chip surface characteristic and structures shape,The light extraction efficiency of LED chip is generally in 10-70% left and right at present, and therefore the raising space of light extraction efficiencyGreatly. For this reason, existing more public technology, as substrate back of the body plating DBR, sidewall burn into surface coarsening orReverse installation process improves the light extraction efficiency of LED chip, and wherein, surface coarsening is generally considered and improves LEDThe effective ways of chip light-emitting efficiency.
The main manufacture craft of existing conventional LED chip is: substrate (generally adopting sapphire material) is complied withThe inferior making epitaxial layer being made up of n-GaN layer, luminescent layer and p-GaN layer that is shaped, then at p-GaNLayer shaping transparency conducting layer (generally adopting ITO material), finally respectively at n-GaN layer and p-GaN layerMake successively shaping N-shaped electrode and p-type electrode. Because the refractive index of GaN is in 2.5 left and right, and airRefractive index be 1, refractive index between the two differs larger, so deposit on LED chip and interface, spaceAt more serious total reflection phenomenon, cause the light that in LED chip, luminescent layer produces only to have the outgoing of small part energy,Most of light is because total reflection phenomenon is limited in LED chip inside, and therefore existing optimisation technique proposesCarry out surface coarsening by the p-GaN layer to LED chip, thereby can avoid foregoing total reflectionPhenomenon, increases the surperficial bright dipping of LED chip, and then improves the conversion efficiency of LED chip.
But existing disclosed LED chip surface coarsening technology need change the making forming technology of epitaxial layer,To increase the thickness of p-GaN layer, and then meet p-GaN layer is carried out in surface coarsening to dry method or wet method is carvedThe requirement of erosion, the shortcoming such as ubiquity technical requirement is higher, manufacturing process is wayward, simultaneously due to thoroughlyBright conductive layer directly contacts with the p-GaN layer with surface coarsening structure, can cause in LED chip transparentOhmic contact problem between conductive layer and p-GaN layer, causes the surface contacted resistance between the two to increaseAdd, and then cause the forward voltage of LED chip to raise, finally cause the electric current injection efficiency of LED chipReduce, be unfavorable for final conversion efficiency of making the LED chip obtaining.
The Chinese patent that is CN101702419A as publication number discloses a kind of GaN based LED chip structureThe method for coarsening surface of middle p-GaN layer or ITO layer, the method comprises the steps: that (1) serves as a contrast at semiconductorGrowing low temperature GaN cushion, the GaN layer that undopes, n-GaN layer, multiple quantum well layer, p-GaN successively at the endStacked structure and the evaporation ITO current extending of layer; (2) prepare individual layer nickel nano particle as mask,Make alligatoring structure at p-GaN layer or ITO layer surface. The inventive method step is simple, and cost is low, thickChange effective; It is thick that p-GaN layer by the inventive method to GaN base LED or ITO layer carry out surfaceChange, can suppress the total reflection of photon in chip, improve the light extraction efficiency of device. Although these patent his-and-hers watchesFace roughening process has carried out simplifying to a certain extent, but has equally above-mentioned transparency conducting layer and p-GaNOhmic contact problem between layer.
Therefore, be necessary to seek a kind of surface coarsening structure or technique of LED chip, this structure or techniqueCan effectively reduce or avoid total reflection phenomenon, and then improve the light extraction efficiency of LED chip, again can be simultaneouslyAvoid producing the Ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantee LED chipElectric current injection efficiency.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of LED surface coarsening chip and preparation method,Can effectively reduce or avoid total reflection phenomenon, and then improve the light extraction efficiency of LED chip, again can be simultaneouslyAvoid producing the Ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantee LED chipElectric current injection efficiency, finally effectively guarantees that the conversion efficiency of LED chip is improved.
To achieve these goals, technical scheme provided by the invention is as follows:
A kind of LED surface coarsening chip, described LED chip comprises substrate and is formed on described substrateEpitaxial layer, described epitaxial layer comprises n-GaN layer, luminescent layer and p-GaN layer successively; Described p-GaNOn layer, be formed with transparency conducting layer; And be formed separately on described n-GaN layer and described transparency conducting layerN-shaped electrode and p-type electrode, wherein, described p-GaN layer surface is provided with multiple alligatoring figures; DescribedTransparency conducting layer is provided with multiple perforate figures, makes all or part of alligatoring figure be exposed to this perforate figureIn.
Preferably, described perforate figure is circle, ellipse or polygonal shape.
Preferably, the full-size of described perforate figure is 2-15 μ m, the spacing between described perforate figureFor 5-50 μ m.
Preferably, described perforate pattern arrangement is honeycomb type or intersecting parallels shape.
Preferably, the gross area of described perforate figure accounts for the total lighting area of described LED surface coarsening chip5-25%。
Preferably, the material of described transparency conducting layer is selected from ITO, ZnO, CdO, Cd2SnO4In appointMeaning is a kind of.
Preferably, the material of described substrate be selected from sapphire, carborundum, silicon, GaAs, gallium nitride,Any one in aluminium nitride and spinelle.
Preferably, a kind of preparation method of LED surface coarsening chip as above, wherein, its operationStep comprises:
A), on substrate, make successively n-GaN layer, luminescent layer and p-GaN layer, described n-GaN layer,Luminescent layer and p-GaN layer composition epitaxial layer;
B), described epitaxial layer is carried out to etching technics processing, obtain PN step, this PN step makes portionDivide n-GaN layer to expose surface;
C), roughening process processing is carried out in described p-GaN layer surface, obtain its surface and there are multiple alligatoringThe p-GaN layer of figure;
D) its surface, c) obtaining in above-mentioned steps has on the p-GaN layer of multiple alligatoring figures and makesTransparency conducting layer;
E), described transparency conducting layer is carried out to photoetching process processing, obtain having multiple perforate figures thoroughlyBright conductive layer, is exposed in this perforate figure all or part of alligatoring figure;
F), respectively described n-GaN layer and described in have on the transparency conducting layer of multiple perforate figures and make nType electrode and p-type electrode.
Preferably, described step c) specifically comprises:
C10), make silicon dioxide film on described p-GaN layer surface;
C20), described silicon dioxide film is carried out to photoetching process processing, obtain having multiple perforate figuresSilicon dioxide film;
C30), using above-mentioned steps c20) silicon dioxide film with multiple perforate figures that obtains is as mask,Dry method or wet etching are carried out in described p-GaN layer surface, make to be positioned at the p-GaN layer at perforate figure placeSurface forms respectively multiple alligatoring figures;
C40), the described silicon dioxide film with multiple perforate figures is carried out to photoetching process processing again,Obtain having the silicon dioxide film of current blocking layer pattern, this silicon dioxide film is as current barrier layer, instituteState current barrier layer between described p-GaN layer and described transparency conducting layer.
Preferably, described step c30) be: with above-mentioned steps c20) obtain there are multiple perforate figuresSilicon dioxide film as mask, be at 200-300 DEG C in temperature, adopt acid solution to described p-GaN layerWet etching is carried out on surface, makes the p-GaN layer surface that is positioned at perforate figure place form respectively multiple alligatoringFigure.
The present invention arranges alligatoring figure by the p-GaN layer surface at LED chip, simultaneously at electrically conducting transparentLayer arranges perforate figure, and all or part of alligatoring figure is exposed in this perforate figure, wherein thickChange structure possessed the surface coarsening effect to p-GaN layer and transparency conducting layer simultaneously, can effectively reduce orAvoid total reflection phenomenon, and then improve the light extraction efficiency of LED chip, and simple in structure, easy to make,Perforate figure wherein, owing to not participating in conduction, therefore can be guaranteed the electric current uniformity of transparency conducting layer, hasEffect is avoided producing the Ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantees LED surfaceThe electric current injection efficiency of alligatoring chip, finally effectively guarantees that the conversion efficiency of LED surface coarsening chip obtainsImprove; The preparation method of the LED surface coarsening chip that further, the present invention proposes does not need to change existingHave the making forming technology of epitaxial layer, simple and convenient, cost of manufacture is low, be beneficial to carry out scale production shouldWith.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will be to realityThe accompanying drawing of executing required use in example or description of the Prior Art is briefly described, apparently, belowAccompanying drawing in description is only some embodiment that record in the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Accompanying drawing 1 is the structural representation of LED chip under the specific embodiment of the invention;
Accompanying drawing 2 is LED chip completing steps c20 in the embodiment of the present invention 1) time structural representation;
Accompanying drawing 3 is LED chip completing steps c30 in the embodiment of the present invention 1) time structural representation.
Detailed description of the invention
The embodiment of the invention discloses a kind of LED surface coarsening chip, LED chip comprises substrate and one-tenthThe epitaxial layer of shape on substrate, epitaxial layer comprises n-GaN layer, luminescent layer and p-GaN layer successively; P-GaNOn layer, be formed with transparency conducting layer; And be formed separately the N-shaped electricity on n-GaN layer and transparency conducting layerThe utmost point and p-type electrode, wherein, p-GaN layer surface is provided with multiple alligatoring figures; Transparency conducting layer is provided with manyIndividual perforate figure, is exposed in this perforate figure all or part of alligatoring figure.
The embodiment of the invention also discloses a kind of preparation method of LED surface coarsening chip as above,Wherein, its operating procedure comprises:
A), on substrate, make successively n-GaN layer, luminescent layer and p-GaN layer, n-GaN layer, luminousLayer and p-GaN layer composition epitaxial layer;
B), epitaxial layer is carried out to etching technics processing, obtain PN step, this PN step makes part n-GaNLayer exposes surface;
C), roughening process processing is carried out in p-GaN layer surface, obtain its surface and there are multiple alligatoring figuresP-GaN layer;
D) its surface, c) obtaining in above-mentioned steps has on the p-GaN layer of multiple alligatoring figures and makesTransparency conducting layer;
E), transparency conducting layer is carried out to photoetching process processing, obtain having the transparent of multiple perforate figures and leadElectricity layer, is exposed in this perforate figure all or part of alligatoring figure;
F), respectively at n-GaN layer with have on the transparency conducting layer of multiple perforate figures and make N-shaped electrodeWith p-type electrode.
The embodiment of the present invention arranges alligatoring figure by the p-GaN layer surface at LED chip, simultaneously thoroughlyBright conductive layer arranges perforate figure, and all or part of alligatoring figure is exposed in this perforate figure, itsIn alligatoring structure possessed the surface coarsening effect to p-GaN layer and transparency conducting layer simultaneously, can be effectiveReduce or avoid total reflection phenomenon, and then improving the light extraction efficiency of LED chip, and simple in structure, makeConvenient, perforate figure wherein, owing to not participating in conduction, therefore can guarantee that the electric current of transparency conducting layer is evenProperty, effectively avoid producing the Ohmic contact problem between transparency conducting layer and p-GaN layer, and then guarantee LEDThe electric current injection efficiency of surface coarsening chip, the final conversion efficiency of effectively guaranteeing LED surface coarsening chipBe improved; The preparation method of the LED surface coarsening chip that further, the embodiment of the present invention proposes is notNeed to change the making forming technology of existing epitaxial layer, simple and convenient, cost of manufacture is low, be beneficial to and adviseMould production application.
In order to make those skilled in the art person understand better the technical scheme in the present invention, below in conjunction withAccompanying drawing in the embodiment of the present invention, retouches clearly and completely to the technical scheme in the embodiment of the present inventionState, obviously, described embodiment is only the present invention's part embodiment, instead of whole enforcementExample. Based on the embodiment in the present invention, those of ordinary skill in the art are not making before creative workPut obtained every other embodiment, all should belong to the scope of protection of the invention.
Embodiment 1:
Shown in Figure 1, a kind of LED surface coarsening chip 100, LED chip comprises substrate (figureNot shown) and be formed in the epitaxial layer on substrate, epitaxial layer comprises n-GaN layer 110, luminous successivelyLayer (scheming not shown) and p-GaN layer (Fig. 1 is not shown); On p-GaN layer, be formed with transparency conducting layer120; And be formed separately N-shaped electrode 130 and the p on n-GaN layer 110 and transparency conducting layer 120Type electrode 140. Preferably, the material of substrate be selected from sapphire, carborundum, silicon, GaAs, gallium nitride,Any one in aluminium nitride and spinelle, specifically preferably, in the present embodiment, the material of substrateFor sapphire; Preferably, the material of transparency conducting layer 120 is selected from ITO(Indiumtinoxide, oxygenChange indium tin), ZnO, CdO, Cd2SnO4In any one; Specifically preferably, in present embodimentIn, the material of transparency conducting layer 120 is ITO.
Wherein, in the present embodiment, p-GaN layer surface is provided with multiple alligatoring figures (Fig. 1 is not shown),Transparency conducting layer 120 is provided with multiple perforate figures 121, makes whole alligatoring figures be exposed to this perforate figureIn 121. Preferably, perforate figure 121 is circle, ellipse or polygonal shape, natch, also canTo be other shapes, the present embodiment is not done concrete restriction; Specifically preferably, in the present embodiment, openHole pattern 121 is circular; Preferably, in the present embodiment, the bed-plate dimension of alligatoring figure is300-500nm, it is highly 200-300nm; The full-size of perforate figure 121 is 2-15 μ m, opensSpacing between hole pattern 121 is 5-50 μ m; Preferably, perforate figure 121 is arranged and is honeycomb type or wellFont shape, natch, can also be other shapes, and the present embodiment is not done concrete restriction.
Preferably, the gross area of perforate figure 121 accounts for LED surface coarsening chip 100 total lighting areas5-25%; Specifically preferably, in the present embodiment, the gross area of perforate figure 121 accounts for LED surface10% of alligatoring chip 100 total lighting areas.
Preferably, a kind of preparation method of LED surface coarsening chip 100 as above, wherein, itsOperating procedure comprises:
A), on substrate, make successively n-GaN layer 110, luminescent layer and p-GaN layer, n-GaN layer 110,Luminescent layer and p-GaN layer composition epitaxial layer, particularly, in the present embodiment, adopt MOCVD(Metal-organicChemicalVaporDeposition, metallo-organic compound chemical vapour deposition (CVD))Sedimentation is made epitaxial layer, natch, also can adopt any of other sedimentations or existing known technologyA kind of preparation method;
B), epitaxial layer is carried out to etching technics processing, obtain PN step, this PN step makes part n-GaNLayer 110 exposes surface, particularly, in the present embodiment, epitaxial layer is adopted to photoetching process processing,Obtain PN step, natch, also can adopt to epitaxial layer any one etching work of existing known technologySkill processing;
C), roughening process processing is carried out in p-GaN layer 150 surface, obtain its surface and there are multiple alligatoringThe p-GaN layer 150 of figure 151, specifically comprises:
C10), make silicon dioxide films 160 on p-GaN layer 150 surface, particularly, in this enforcements justIn formula, adopt PECVD(PlasmaEnhancedChemicalVaporDeposition, plasmaStrengthen chemical vapour deposition (CVD)) sedimentation making silicon dioxide film 160, natch, also can adopt other heavyAny one preparation method of long-pending method or existing known technology;
C20), shown in Figure 2, silicon dioxide film 160 is carried out to photoetching process processing, obtain toolThere is the silicon dioxide film 160 of multiple perforate figures 121;
C30), shown in Figure 3, with above-mentioned steps c20) obtain there are multiple perforate figures 121Silicon dioxide film 160 as mask, be at 200-300 DEG C in temperature, adopt acid solution to p-GaN layerWet etching is carried out on 150 surfaces, makes to be positioned at the p-GaN layer 150 surface difference at perforate figure 121 placesForm multiple alligatoring figures 151, specifically preferably, in the present embodiment, the temperature of wet etching is230 DEG C, the mixed acid solution that acid solution is phosphoric acid-sulfuric acid;
C40), the silicon dioxide film 160 with multiple perforate figures 121 is carried out to photoetching process place againReason, obtains having the silicon dioxide film of current blocking layer pattern, and this silicon dioxide film is as current barrier layer,Current barrier layer is between p-GaN layer 150 and transparency conducting layer 120.
D) its surface, c) obtaining in above-mentioned steps has the p-GaN layer 150 of multiple alligatoring figures 151Upper making transparency conducting layer 120, specifically preferably, in the present embodiment, adopts evaporation process to make thoroughlyBright conductive layer 120, natch, also can adopt any one preparation method of existing known technology;
E), transparency conducting layer 120 is carried out to photoetching process processing, obtain having multiple perforate figures 121Transparency conducting layer 120, whole alligatoring figures 151 are exposed in this perforate figure 121;
F), respectively at n-GaN layer 110 with have on the transparency conducting layer 120 of multiple perforate figures 121Make N-shaped electrode 130 and p-type electrode 140, particularly, in the present embodiment, it is right in advance to adoptN-GaN layer 110 carries out photoetching process processing with the transparency conducting layer 120 with multiple perforate figures 121Make respectively the figure of N-shaped electrode and p-type electrode, then by technique systems such as deposition, evaporation or sputtersMake N-shaped electrode 130 and the p-type electrode 140 of respective graphical, natch, also can adopt existing known skillAny one preparation method of art is made N-shaped electrode and p-type electrode.
It should be noted that, due to the perforate figure of silicon dioxide film 160 and opening of transparency conducting layer 120Hole pattern is identical, and therefore, in embodiments of the present invention, both adopt same Reference numeral, arePerforate figure 121.
This patent in full basic operational steps of related photoetching process processing mainly comprises: coating photoetchingAfter glue, after exposure, development, baking, obtain having patterned photoresist layer, then by wet method or dryMethod etching transfers to the figure of photoresist layer by the target base plate of photoetching process processing, makes this targetSubstrate obtains respective graphical, completes photoetching process processing, specifically can adopt that existing any one is knownPhotoetching process, and concrete technology parameter can select according to actual needs, believes that these all belong to thisThose skilled in the art's routine is selected, and all no longer concrete expansion repeats in this article.
In addition, all kinds of sedimentation relating to for the embodiment of the present invention or vapour deposition method are conventional prior art,Its concrete manufacture craft and parameter select equally all to belong to those skilled in the art's common practise or routineSelect, therefore, all equally no longer concrete expansion repeats in this article.
Detect thick in the LED surface coarsening chip 100 that the embodiment of the present invention provides through related experimentChange graphic structure owing to having reduced the total reflection phenomenon of chip surface, under unit are, can improveThe chip surface bright dipping of 20%-30%, again because the gross area of perforate figure 121 (is perforate figureArea sum) account for 10% of LED surface coarsening chip 100 total lighting areas, LED surface coarseningThe light extraction efficiency of chip 100 has improved 2-3%, natch, in other embodiments, can also pass throughChange shape and the area of perforate figure, further improve the light extraction efficiency of LED surface coarsening chip; WithTime due to perforate figure 121 do not participate in conduction, therefore wet etching system carry out in p-GaN layer 150 surfaceObtaining alligatoring figure 151 can not affect the electric current uniformity of transparency conducting layer 120, thereby avoids producingOhmic contact problem between transparency conducting layer 120 and p-GaN layer 150, and then guarantee that LED surface is thickChange the electric current injection efficiency of chip 100, finally effectively guarantee the conversion effect of LED surface coarsening chip 100Rate is improved.
Meanwhile, the LED surface coarsening chip 100 that the embodiment of the present invention provides is with respect to conventional LED coreSheet only needs increase once silicon dioxide film 160 to be carried out to photoetching process processing, obtains having perforate figure121 silicon dioxide film 160 is at 230 DEG C in temperature simultaneously, adopts the mixed acid solution of phosphoric acid-sulfuric acidWet etching is carried out in p-GaN layer 150 surface, can form alligatoring figure on p-GaN layer 150 surface151, this silicon dioxide film 160 is processed and also be can be used as current barrier layer simultaneously through photoetching process simultaneously, noNeed to change the making forming technology of existing epitaxial layer, simple and convenient, cost of manufacture is low, be beneficial to and adviseMould production application.
Embodiment 2:
In order further to simplify manufacture craft of the present invention, according to actual needs, the present invention also provides realityExecute example 2. All the other are identical with embodiment 1 for the present embodiment 2, and difference is only step c), specifically comprises:
C), roughening process processing is carried out in p-GaN layer surface, obtain its surface and there are multiple alligatoring figuresP-GaN layer, specifically comprise: be at 200-300 DEG C in temperature, adopt acid solution to p-GaN layer tableFace carries out wet etching, makes p-GaN layer surface form multiple alligatoring figures, specifically preferably, and at thisIn embodiment, the temperature of wet etching is 230 DEG C, the mixed acid solution that acid solution is phosphoric acid-sulfuric acid.
All the other operating procedures of the present embodiment 2 can be referring to above-described embodiment 1, and the present embodiment 2 is through step e)After, part alligatoring figure is exposed in this perforate figure.
Shown in Figure 1 equally, the present embodiment 2 provides a kind of LED surface coarsening chip 100, LEDChip comprises substrate (scheming not shown) and is formed in the epitaxial layer on substrate, and epitaxial layer comprises n-GaN successivelyLayer 110, luminescent layer (scheming not shown) and p-GaN layer (Fig. 1 is not shown); On p-GaN layer, be formed withTransparency conducting layer 120; And be formed separately the N-shaped on n-GaN layer 110 and transparency conducting layer 120Electrode 130 and p-type electrode 140. Wherein, in the present embodiment, p-GaN layer surface is provided with multiple thickChange figure (Fig. 1 is not shown), transparency conducting layer 120 is provided with multiple perforate figures 121, makes part thickChange figure and be exposed in this perforate figure 121, all the other are all with embodiment 1.
The present embodiment 2, with respect to embodiment 1, has been avoided adopting and making in advance silica in step c)Film, as techniques such as mask and photoetching process processing, can be simplified manufacture craft, and alligatoring figure is carved allBe arranged on p-GaN layer, therefore light extraction efficiency is generally more better than embodiment 1 evenly, but due to this enforcementThe LED surface coarsening chip 100 that example 2 provides is only exposed to this perforate figure 121 for part alligatoring figureIn, still some alligatoring figure directly contacts with transparency conducting layer 120, thereby still has oneOhmic contact problem between a little transparency conducting layers 120 and p-GaN layer 150, therefore the present embodiment 2Electric current injection efficiency is inferior to embodiment 1, and therefore, those skilled in the art can select according to the actual requirementsImplement different embodiment.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment,And in the situation that not deviating from spirit of the present invention or essential characteristic, can be real with other concrete formExisting the present invention. Therefore, no matter from which point, all should regard embodiment as exemplary, andBe nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, therefore purportThe all changes that drop in the implication and the scope that are equal to important document of claim are included in the present invention.Any Reference numeral in claim should be considered as limiting related claim.
In addition although should be appreciated that this description is described according to embodiment, be not each reality,The mode of executing only comprises an independently technical scheme, and this narrating mode of description is only for knowingSee, those skilled in the art should make description as a whole, and the technical scheme in each embodiment alsoCan, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (2)
1. a preparation method for LED surface coarsening chip, is characterized in that, its operating procedure comprises:
A), on substrate, make successively n-GaN layer, luminescent layer and p-GaN layer, described n-GaN layer, luminescent layer and p-GaN layer composition epitaxial layer;
B), described epitaxial layer is carried out to etching technics processing, obtain PN step, this PN step makes part n-GaN layer expose surface;
C), roughening process processing is carried out in described p-GaN layer surface, obtain its surface and have the p-GaN layer of multiple alligatoring figures;
D) its surface, c) obtaining in above-mentioned steps has on the p-GaN layer of multiple alligatoring figures and makes transparency conducting layer;
E), described transparency conducting layer is carried out to photoetching process processing, obtain having the transparency conducting layer of multiple perforate figures, all or part of alligatoring figure is exposed in this perforate figure;
F), respectively described n-GaN layer and described in have on the transparency conducting layer of multiple perforate figures and make N-shaped electrode and p-type electrode;
Described step c) specifically comprises:
C10), make silicon dioxide film on described p-GaN layer surface;
C20), described silicon dioxide film is carried out to photoetching process processing, obtain having the silicon dioxide film of multiple perforate figures;
C30), using above-mentioned steps c20) silicon dioxide film with multiple perforate figures that obtains is as mask, and dry method or wet etching are carried out in described p-GaN layer surface, makes the p-GaN layer surface that is positioned at perforate figure place form respectively multiple alligatoring figures;
C40), the described silicon dioxide film with multiple perforate figures is carried out to photoetching process processing again, obtain having the silicon dioxide film of current blocking layer pattern, this silicon dioxide film is as current barrier layer, and described current barrier layer is between described p-GaN layer and described transparency conducting layer.
2. the preparation method of LED surface coarsening chip as claimed in claim 1, it is characterized in that, described step c30) be: using above-mentioned steps c20) silicon dioxide film with multiple perforate figures that obtains is as mask, be at 200-300 DEG C in temperature, adopt acid solution to carry out wet etching to described p-GaN layer surface, make the p-GaN layer surface that is positioned at perforate figure place form respectively multiple alligatoring figures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310424414.2A CN103456855B (en) | 2013-09-17 | 2013-09-17 | A kind of LED surface coarsening chip and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310424414.2A CN103456855B (en) | 2013-09-17 | 2013-09-17 | A kind of LED surface coarsening chip and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456855A CN103456855A (en) | 2013-12-18 |
| CN103456855B true CN103456855B (en) | 2016-05-11 |
Family
ID=49739017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310424414.2A Active CN103456855B (en) | 2013-09-17 | 2013-09-17 | A kind of LED surface coarsening chip and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103456855B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459658A (en) * | 2018-05-08 | 2019-11-15 | 山东浪潮华光光电子股份有限公司 | A kind of UV LED chip of p-type GaN layer and preparation method thereof |
| CN110676354A (en) * | 2018-07-02 | 2020-01-10 | 山东浪潮华光光电子股份有限公司 | Growth method of LED surface roughening chip |
| CN110534623B (en) * | 2019-09-03 | 2021-06-11 | 厦门乾照光电股份有限公司 | LED chip and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101331617A (en) * | 2005-12-13 | 2008-12-24 | 昭和电工株式会社 | Gallium nitride compound semiconductor light-emitting device |
| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| EP2541627A2 (en) * | 2011-06-30 | 2013-01-02 | LG Innotek Co., Ltd. | Light emitting device and lighting system with the same |
| CN103066175A (en) * | 2011-10-20 | 2013-04-24 | 山东浪潮华光光电子有限公司 | Light emitting diode with current barrier layer and preparation method thereof |
| CN203503688U (en) * | 2013-09-17 | 2014-03-26 | 聚灿光电科技(苏州)有限公司 | LED surface-roughened chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159894A (en) * | 2006-12-25 | 2008-07-10 | Kyocera Corp | Light emitting element and illuminator |
| US8759127B2 (en) * | 2011-08-31 | 2014-06-24 | Toshiba Techno Center Inc. | Gold micromask for roughening to promote light extraction in an LED |
-
2013
- 2013-09-17 CN CN201310424414.2A patent/CN103456855B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101331617A (en) * | 2005-12-13 | 2008-12-24 | 昭和电工株式会社 | Gallium nitride compound semiconductor light-emitting device |
| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| EP2541627A2 (en) * | 2011-06-30 | 2013-01-02 | LG Innotek Co., Ltd. | Light emitting device and lighting system with the same |
| CN103066175A (en) * | 2011-10-20 | 2013-04-24 | 山东浪潮华光光电子有限公司 | Light emitting diode with current barrier layer and preparation method thereof |
| CN203503688U (en) * | 2013-09-17 | 2014-03-26 | 聚灿光电科技(苏州)有限公司 | LED surface-roughened chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456855A (en) | 2013-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106340576B (en) | Light emitting element and light emitting device | |
| CN102132429B (en) | Series connected segmented led | |
| CN104037277A (en) | LED flip chip manufacturing method and LED flip chip | |
| WO2016019860A1 (en) | Vertical led chip structure and manufacturing method therefor | |
| CN104064634A (en) | Production method for high-brightness GaN-based eutectic welding light emitting diodes | |
| CN106169531A (en) | The inverted light-emitting diode (LED) of a kind of ODR structure and preparation method, upside-down mounting high-voltage LED | |
| CN103456855B (en) | A kind of LED surface coarsening chip and preparation method | |
| CN204441323U (en) | Flip LED chips | |
| CN102185043A (en) | Light-emitting diode and preparation method thereof, and solar cell and preparation method thereof | |
| CN104576857A (en) | Flip LED chip structure with high reflection layer and manufacturing method of flip LED chip structure | |
| CN104037295A (en) | LED (Light-Emitting Diode) flip chip and manufacturing method thereof | |
| CN102832299B (en) | A kind of preparation method of layered, transparent conductive layer LED chip | |
| TWI623115B (en) | Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same | |
| KR20110130204A (en) | Light emitting diode and fabrication method thereof | |
| CN103441198A (en) | LED high-brightness upside-down mounting chip and manufacture method thereof | |
| CN105374914A (en) | LED chip and LED chip manufacturing method | |
| CN102790156B (en) | Semiconductor light emitting structure | |
| CN203503688U (en) | LED surface-roughened chip | |
| CN204441318U (en) | A kind of efficient current injection luminescent diode | |
| CN106025027A (en) | LED chip structure and manufacturing method thereof | |
| JP6252123B2 (en) | Method for manufacturing light emitting device | |
| CN105304782B (en) | A kind of blue green LED chip | |
| CN103682021A (en) | LED with metal electrodes adopting array microstructures and manufacturing method thereof | |
| KR20130044909A (en) | Light emitting device package and method of manufacturing the same | |
| CN103489980A (en) | Light-emitting component and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: FOCUS LIGHTING (SUZHOU) CO., LTD. TO: FOCUS LIGHINGS TECHNOLOGY CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200909 Address after: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. Address before: 215123 No. 8 Qing Qing Road, Suzhou Industrial Park, Jiangsu, China Patentee before: FOCUS LIGHTINGS SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 223800 south of Dongwu Road, Suqian Economic and Technological Development Zone, Jiangsu Province Patentee after: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. Address before: 223800 west side of development avenue of Suqian economic and Technological Development Zone in Jiangsu province (room 2005 of business center) Patentee before: FOCUS LIGHTINGS TECHNOLOGY (SUQIAN) Co.,Ltd. |