CN103456636A - 解决晶体管的IdVg曲线双峰现象的方法 - Google Patents
解决晶体管的IdVg曲线双峰现象的方法 Download PDFInfo
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- CN103456636A CN103456636A CN2012101830161A CN201210183016A CN103456636A CN 103456636 A CN103456636 A CN 103456636A CN 2012101830161 A CN2012101830161 A CN 2012101830161A CN 201210183016 A CN201210183016 A CN 201210183016A CN 103456636 A CN103456636 A CN 103456636A
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105990115A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 一种半导体器件及其制造方法、电子装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5937284A (en) * | 1995-05-31 | 1999-08-10 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having an SOI structure |
US20070004159A1 (en) * | 2005-06-29 | 2007-01-04 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor device using gate-through ion implantation |
US20100320529A1 (en) * | 2009-06-19 | 2010-12-23 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit system with high voltage transistor and method of manufacture thereof |
CN102157434A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI LIGBT器件单元的制作方法 |
CN102208446A (zh) * | 2011-04-20 | 2011-10-05 | 北京大学 | 隧穿电流放大晶体管 |
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- 2012-06-05 CN CN2012101830161A patent/CN103456636A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5937284A (en) * | 1995-05-31 | 1999-08-10 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having an SOI structure |
US20070004159A1 (en) * | 2005-06-29 | 2007-01-04 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor device using gate-through ion implantation |
US20100320529A1 (en) * | 2009-06-19 | 2010-12-23 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit system with high voltage transistor and method of manufacture thereof |
CN102157434A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI LIGBT器件单元的制作方法 |
CN102208446A (zh) * | 2011-04-20 | 2011-10-05 | 北京大学 | 隧穿电流放大晶体管 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105990115A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 一种半导体器件及其制造方法、电子装置 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140116 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20131218 |