CN102208446A - 隧穿电流放大晶体管 - Google Patents
隧穿电流放大晶体管 Download PDFInfo
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- CN102208446A CN102208446A CN2011100987306A CN201110098730A CN102208446A CN 102208446 A CN102208446 A CN 102208446A CN 2011100987306 A CN2011100987306 A CN 2011100987306A CN 201110098730 A CN201110098730 A CN 201110098730A CN 102208446 A CN102208446 A CN 102208446A
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- tunnelling
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- 230000005641 tunneling Effects 0.000 title abstract description 13
- 230000003321 amplification Effects 0.000 title abstract 3
- 238000003199 nucleic acid amplification method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract description 5
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100987306A CN102208446B (zh) | 2011-04-20 | 2011-04-20 | 隧穿电流放大晶体管 |
DE112011103129T DE112011103129T5 (de) | 2011-04-20 | 2011-05-26 | Verstärkungstransistor vom Typ Tunnelstrom |
PCT/CN2011/074686 WO2012142781A1 (zh) | 2011-04-20 | 2011-05-26 | 隧穿电流放大晶体管 |
US13/255,087 US8895980B2 (en) | 2011-04-20 | 2011-05-26 | Tunneling current amplification transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100987306A CN102208446B (zh) | 2011-04-20 | 2011-04-20 | 隧穿电流放大晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102208446A true CN102208446A (zh) | 2011-10-05 |
CN102208446B CN102208446B (zh) | 2013-04-10 |
Family
ID=44697190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011100987306A Active CN102208446B (zh) | 2011-04-20 | 2011-04-20 | 隧穿电流放大晶体管 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102208446B (zh) |
DE (1) | DE112011103129T5 (zh) |
WO (1) | WO2012142781A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456636A (zh) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | 解决晶体管的IdVg曲线双峰现象的方法 |
CN103996713A (zh) * | 2014-04-22 | 2014-08-20 | 北京大学 | 垂直沟道双机制导通纳米线隧穿晶体管及制备方法 |
CN104409490A (zh) * | 2014-12-08 | 2015-03-11 | 沈阳工业大学 | Soi衬底双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104465737A (zh) * | 2014-12-08 | 2015-03-25 | 沈阳工业大学 | 体硅双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104465775A (zh) * | 2014-12-12 | 2015-03-25 | 西安邮电大学 | 基于陷阱产生机制的双漏区半导体器件其制造方法及应用 |
CN104465776A (zh) * | 2014-12-12 | 2015-03-25 | 西安邮电大学 | 一种双栅电极的半导体器件其制造方法及应用 |
CN104485354A (zh) * | 2014-12-08 | 2015-04-01 | 沈阳工业大学 | Soi衬底折叠栅绝缘隧穿增强晶体管及其制造方法 |
CN104485358A (zh) * | 2014-12-12 | 2015-04-01 | 西安邮电大学 | 一种基于陷阱产生机制的半导体器件其制造方法及应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246103B1 (en) * | 1999-10-25 | 2001-06-12 | Advanced Micro Devices, Inc. | Bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current |
US20060008960A1 (en) * | 2004-07-09 | 2006-01-12 | Chaudhry Muhammad I | Fabrication of an EEPROM cell with SiGe source/drain regions |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5898613A (en) * | 1996-07-24 | 1999-04-27 | California Institute Of Technology | pMOS analog EEPROM cell |
US8111558B2 (en) * | 2004-05-05 | 2012-02-07 | Synopsys, Inc. | pFET nonvolatile memory |
-
2011
- 2011-04-20 CN CN2011100987306A patent/CN102208446B/zh active Active
- 2011-05-26 WO PCT/CN2011/074686 patent/WO2012142781A1/zh active Application Filing
- 2011-05-26 DE DE112011103129T patent/DE112011103129T5/de not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246103B1 (en) * | 1999-10-25 | 2001-06-12 | Advanced Micro Devices, Inc. | Bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current |
US20060008960A1 (en) * | 2004-07-09 | 2006-01-12 | Chaudhry Muhammad I | Fabrication of an EEPROM cell with SiGe source/drain regions |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456636A (zh) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | 解决晶体管的IdVg曲线双峰现象的方法 |
CN103996713A (zh) * | 2014-04-22 | 2014-08-20 | 北京大学 | 垂直沟道双机制导通纳米线隧穿晶体管及制备方法 |
CN103996713B (zh) * | 2014-04-22 | 2017-02-15 | 北京大学 | 垂直沟道双机制导通纳米线隧穿晶体管及制备方法 |
CN104485354A (zh) * | 2014-12-08 | 2015-04-01 | 沈阳工业大学 | Soi衬底折叠栅绝缘隧穿增强晶体管及其制造方法 |
CN104465737A (zh) * | 2014-12-08 | 2015-03-25 | 沈阳工业大学 | 体硅双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104409490A (zh) * | 2014-12-08 | 2015-03-11 | 沈阳工业大学 | Soi衬底双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104465737B (zh) * | 2014-12-08 | 2017-07-21 | 沈阳工业大学 | 体硅双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104409490B (zh) * | 2014-12-08 | 2017-10-20 | 沈阳工业大学 | Soi衬底双栅绝缘隧穿基极双极晶体管及其制造方法 |
CN104485354B (zh) * | 2014-12-08 | 2017-10-27 | 沈阳工业大学 | Soi衬底折叠栅绝缘隧穿增强晶体管及其制造方法 |
CN104465775A (zh) * | 2014-12-12 | 2015-03-25 | 西安邮电大学 | 基于陷阱产生机制的双漏区半导体器件其制造方法及应用 |
CN104465776A (zh) * | 2014-12-12 | 2015-03-25 | 西安邮电大学 | 一种双栅电极的半导体器件其制造方法及应用 |
CN104485358A (zh) * | 2014-12-12 | 2015-04-01 | 西安邮电大学 | 一种基于陷阱产生机制的半导体器件其制造方法及应用 |
CN104465776B (zh) * | 2014-12-12 | 2017-09-15 | 西安邮电大学 | 一种双栅电极的半导体器件其制造方法及应用 |
Also Published As
Publication number | Publication date |
---|---|
CN102208446B (zh) | 2013-04-10 |
DE112011103129T5 (de) | 2013-09-05 |
WO2012142781A1 (zh) | 2012-10-26 |
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BEIJING UNIV. Effective date: 20141017 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20141017 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 100176 DAXING, BEIJING |
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TR01 | Transfer of patent right |
Effective date of registration: 20141017 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |