CN103403215A - 制造设备 - Google Patents
制造设备 Download PDFInfo
- Publication number
- CN103403215A CN103403215A CN2011800686379A CN201180068637A CN103403215A CN 103403215 A CN103403215 A CN 103403215A CN 2011800686379 A CN2011800686379 A CN 2011800686379A CN 201180068637 A CN201180068637 A CN 201180068637A CN 103403215 A CN103403215 A CN 103403215A
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- Prior art keywords
- chamber
- film
- sputtering
- substrate
- settling chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 179
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000012528 membrane Substances 0.000 claims description 11
- 239000013049 sediment Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 132
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 110
- 229910019236 CoFeB Inorganic materials 0.000 description 26
- 238000000151 deposition Methods 0.000 description 24
- 230000008021 deposition Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 14
- 238000005477 sputtering target Methods 0.000 description 13
- 229910019041 PtMn Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 230000005291 magnetic effect Effects 0.000 description 11
- 238000001755 magnetron sputter deposition Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229910003321 CoFe Inorganic materials 0.000 description 9
- 230000005294 ferromagnetic effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910020598 Co Fe Inorganic materials 0.000 description 7
- 229910002519 Co-Fe Inorganic materials 0.000 description 7
- 229910003271 Ni-Fe Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005303 antiferromagnetism Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910018516 Al—O Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910019589 Cr—Fe Inorganic materials 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/14—Metallic material, boron or silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
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Abstract
本发明提供一种制造设备,该制造设备即使在一个多层薄膜中存在由同一类型的膜形成的多个层的情况下也能够执行所谓的连续基板传送并能够提高生产量。根据本发明的一个实施方式,制造设备设置有:传送室(12);各自设置有一个溅射阴极的三个溅射沉积室(13A、13C、13E);各自设置有两个或更多溅射阴极的两个溅射沉积室(13B、13D);以及用于进行除溅射以外的处理的处理室(14)。三个溅射沉积室(13A、13C、13E)、两个溅射沉积室(13B、13D)以及处理室(14)以使得各室能够利用传送室(12)进行基板的送出和接收的方式配置在传送室(12)的周围。
Description
技术领域
本发明涉及一种制造设备,特别地涉及多层薄膜的制造设备,其对于诸如磁盘驱动设备的再生磁头、磁性随机存取存储器的存储元件、用于磁性传感器的磁阻元件、半导体存储器的存储元件等的应用多层薄膜的装置的制造过程是优选的。
背景技术
传统的多层薄膜的膜形成设备具有如下构造:在该构造中,一个溅射沉积室包括数量等于或大于多层薄膜中的膜类型的数量的溅射阴极(参照专利文献1),或具有如下构造:该构造为包括各自具有多个溅射阴极的多个溅射沉积室的所谓的集群系统(参照专利文献2)。
在另一个构造中,集群系统包括各自具有一个溅射阴极的溅射沉积室,溅射沉积室的数量至少等于多层薄膜中的膜类型的数量(参照专利文献3)。
此外,作为又一构造,公开了一种溅射设备,该溅射设备利用如图8所示的包括如下部件的溅射设备在基板上沉积包括磁阻元件的多层膜:安装有一个靶116a的第一真空室110、安装有四个靶116b、116c、116d、116e的第二真空室112以及与该两个真空室110和112联接的传送室114(参照专利文献4)。
此外,作为又一构造,将通过使用图9说明在专利文献5中公开的溅射系统600。图9的溅射系统600包括第一单靶DC磁控溅射模块604、多靶DC溅射模块606、多靶离子束溅射模块608以及第二单靶DC磁控溅射模块610。装载锁定件616能够使晶片出入。控制面板614控制溅射系统600的参数和处理。
首先,通过使用图10,将说明通过使用图9中说明的溅射系统600制造的自旋阀传感器300。图10所说明的自旋阀传感器300包括基板302、底部屏蔽311(Ni-Fe膜)、底部间隙层304(Al2O3膜)、多重晶种层306(第一晶种层:Al2O3膜,第二晶种层:Ni-Cr-Fe膜,第三晶种层:Ni-Fe膜)、反铁磁性钉扎层308(Pt-Mn膜)、Co-Fe膜310、Ru膜312、Co-Fe膜314、间隔层316(Cu(Cu-O)膜)、Co-Fe膜318、Ni-Fe膜320、覆盖层322(Al(Al-O)膜)、上部间隙层324(Al2O3膜)以及上部屏蔽(Ni-Fe膜)325。这里,图10示出铁磁性检出层307(称为“自由层”)通过间隔层316与铁磁性被钉扎层309分离。在图10示出的自旋阀传感器300中,被钉扎层309的磁化通过与被称为钉扎层的反铁磁性膜的交换结合被约束,并且被称为“检出”层或“自由”层307的另一个铁磁性膜的磁化并不固定并且响应于来自被记录的磁性介质的磁场(信号磁场)而自由转动。
接下来,通过使用图9说明的溅射系统600,将说明自旋阀传感器300的制造方法。首先,在第一单靶DC磁控溅射模块604中的晶片上形成底部间隙层304。之后,为了堆叠多重晶种层306,晶片被传送至第二单靶DC磁控溅射模块610,并且堆叠第一晶种层Al2O3膜。之后,为了堆叠第二晶种层Ni-Fe-Cr膜和第三种晶种层Ni-Fe膜,晶片被传送至多靶离子束溅射模块608中并且分别堆叠Ni-Cr-Fe膜和Ni-Fe膜。之后,晶片被传送至多靶DC磁控溅射模块606以堆叠自旋阀传感器的剩下的层。剩下的层包括Pt-Mn膜308、Co-Fe膜310、Ru膜312、Co-Fe膜314、Cu(Cu-O)膜316、Co-Fe膜318、Ni-Fe膜320、Al(Al-O)膜322。在将上述剩下的层堆叠之后,对晶片进行退火并堆叠Ta膜。
引用列表
专利文献
专利文献1:日本特开2002-167661号公报
专利文献2:日本特开平08-239765号公报
专利文献3:日本特开2007-311461号公报
专利文献4:日本特开2000-269568号公报
专利文献5:日本特开2003-158313号公报
发明内容
近年来的多层薄膜应用装置,除了增加了堆叠层的数量以外,还具有如下趋势:在形成多层薄膜的膜中使用不同数量级的膜厚并且组合金属膜、绝缘膜和半导体膜。
在通过包括各自具有多个溅射阴极的多个溅射沉积室的集群式制造设备形成这种多层薄膜的情况下(专利文献1和专利文献2),用于溅射形成具有不同数量级的较厚的厚度的膜的时间或者用于在多层薄膜中具有不同数量级的较低的溅射率的氧化物膜的时间变得比形成其它薄膜的时间长,而这成为限制制造设备的生产量的原因。特别地,当形成包括单一元素的膜时,由于多个溅射阴极中仅有一个起作用,因此还存在设置面积(footprint)的问题。
此外,对于通过利用专利文献1或专利文献2中说明的制造设备组合金属膜、绝缘膜和半导体膜以形成多层薄膜的情况,存在如下的所谓的层间交叉污染的问题:当金属膜混合到绝缘膜或半导体膜中时装置特性显著劣化。
另一方面,在包括各自具有一个溅射阴极的溅射沉积室(数量至少与多层薄膜中的膜类型的数量相等)的集群式制造设备(专利文献3)中,能够避免层间交叉污染。然而,由于需要增加溅射沉积室的数量,制造设备的尺寸被增加了,因此存在成本增加、设置面积增加以及能量消耗增加的问题。此外,在专利文献3说明的制造设备中,存在不能形成包含多个元素的膜的问题。
而且,在专利文献4中说明的溅射设备中,当一个多层薄膜包括相同膜类型的多层时,由于不是每一层均设置有溅射靶,在一系列的膜沉积处理中基板被两次传送到同一处理室中。也就是说,当包括Ta/NiFe/CoFeB/Cu/CoFeB/PdPtMn/Ta的磁阻效果膜通过使用图8所示的专利文献4说明的溅射设备形成时,基板如下所述被两次传送至第一真空室110。首先,通过在第一真空室110中通过将Ta用作靶进行溅射而在基板表面上形成Ta膜,基板被传送至第二真空室112中,接下来,通过将NiFe、CoFeB、Cu、PdPtMn用作靶进行溅射而形成NiFe膜、CoFeB膜、Cu膜、PdPtMn膜。之后,为了在第一真空室110中将Ta用作靶进行溅射而在基板表面上形成Ta膜的目的,需要将基板再次传送至第一真空室110中。这样,对于专利文献4说明的溅射设备的情况,在一系列膜沉积处理中基板被两次传送至同一处理室中,由此存在生产量的问题。而且,还存在不能实现所谓的连续基板传送的问题。
此外,在图9所示的专利文献5的溅射系统600中,晶片被依次传送至第一单靶DC磁控溅射模块604、第二单靶DC磁控溅射模块610、多靶离子束溅射模块608以及多靶DC溅射模块606,并且制造图11中说明的自旋阀传感器300。因此,与专利文献4说明的溅射设备相比,专利文献5的溅射系统600实现了所谓的连续基板传送。
然而,在专利文献5的溅射系统600中,自旋阀传感器300的从反铁磁性钉扎层308(Pt-Mn膜)到覆盖层322(Al(Al-O)膜)的膜沉积在多靶DC溅射模块606中进行。
典型地,在自旋阀传感器300中,反铁磁性钉扎层308(Pt-Mn膜)的膜厚(10nm至20nm)比例如Co-Fe膜318等其它层的膜厚(1nm至5nm)大一个数量级。因此,与第一单靶DC磁控溅射模块604、第二单靶DC磁控溅射模块610、多靶离子束溅射模块608的膜沉积时间相比,在多靶DC溅射模块606中的膜沉积时间(也称作“节拍时间”)相当长。生产量由单位时间内能够处理的基板工件数量(节拍时间)决定。因此,即使当第一单靶DC磁控溅射模块604、第二单靶DC磁控溅射模块610、多靶离子束溅射模块608中的每一个的节拍时间短时,如果多靶DC溅射模块606的节拍时间较长,则生产量由多靶DC溅射模块606的节拍时间决定。结果,专利文献5的溅射系统600仍然具有生产量的问题。
本发明旨在提供一种制造设备,即使当一个多层薄膜包括具有相同膜类型的多层时,该制造设备也能够实现所谓的连续基板传送并且提高生产量。
为了实现该目的,本发明的一个方面是:一种制造设备,其用于在基板上生长多层膜,所述制造设备包括:传送室,其包括基板传送机构;第一溅射沉积室,其包括一个溅射阴极;第二溅射沉积室,其包括一个溅射阴极;第三溅射沉积室,其包括一个溅射阴极;第四溅射沉积室,其包括两个或更多溅射阴极;第五溅射沉积室,其包括两个或更多溅射阴极;以及处理室,其用于进行除溅射以外的处理,其中所述第一溅射沉积室、所述第二溅射沉积室、所述第三溅射沉积室、所述第四溅射沉积室、所述第五溅射沉积室以及所述处理室以使得各室能够利用所述传送室进行所述基板的送出和接收的方式配置在所述传送室的周围。
根据本发明,包括一个溅射阴极的第一溅射沉积室、包括一个溅射阴极的第二溅射沉积室、包括一个溅射阴极的第三溅射沉积室、包括两个或更多溅射阴极的第四溅射沉积室、包括两个或更多溅射阴极的第五溅射沉积室以及用于进行除溅射以外的处理的处理室配置在传送室的周围。因此,即使当一个多层薄膜包括具有相同膜类型的多层时,也能够实现所谓的连续基板传送并提高生产量。
附图说明
[图1]是示出根据本发明的实施方式的多层薄膜制造设备的第一示例的构造图。
[图2]是示出根据本发明的实施方式的包括多个溅射阴极的溅射沉积室的示例的构造图。
[图3]是示出根据本发明的实施方式的包括一个溅射阴极的溅射沉积室的示例的构造图。
[图4]是示出根据本发明的实施方式的溅射沉积室的示例的构造图,该溅射沉积室以使得溅射靶表面与基板表面大致平行的方式安装溅射阴极。
[图5]是通过使用根据本发明的实施方式的制造设备制造的隧道型磁阻元件的膜构成图。
[图6]是示出根据本发明的实施方式的多层薄膜制造设备的第二示例的构造图。
[图7]是示出能够应用于本发明的实施方式的处理室的内部结构的构造图。
[图8]是示出传统(专利文献4)的多层薄膜制造设备的示例的构造图。
[图9]是示出传统(专利文献5)的多层薄膜制造设备的示例的构造图。
[图10]是示出由传统(专利文献5)的多层薄膜制造设备制造的自旋阀传感器的示例的构造图。
具体实施方式
将利用附图来说明根据本发明的实施方式的多层膜制造设备。
图1是示出根据本发明的实施方式的多层薄膜制造设备的第一示例的构造图。图1的制造设备适于在形成多层薄膜时在维持低成本的同时提高生产量,还适于通过防止或减少层间交叉污染来抑制装置特性的劣化。
本发明的制造设备的特征为:用于进行除溅射以外的处理的处理室(蚀刻室14)、包括一个溅射阴极的第一溅射沉积室(溅射沉积室13A)、包括一个溅射阴极的第二溅射沉积室(溅射沉积室13C)、包括一个溅射阴极的第三溅射沉积室(溅射沉积室13E)、包括两个或更多溅射阴极的第四溅射沉积室(溅射沉积室13B)和包括两个或更多溅射阴极的第五溅射沉积室(溅射沉积室13D)围绕包括基板传送机构的传送室配置。这里,在图1中,各自包括一个溅射阴极的三个溅射沉积室、各自包括两个或更多溅射阴极的两个溅射沉积室以及用于进行除溅射以外的处理的处理室围绕包括基板传送机构的传送室设置。如下面将说明的,从提高生产量的观点出发,有必要设置三个或更多各自包括一个溅射阴极的溅射沉积室。
在图1中,五个溅射沉积室13A至13E、用于通过反溅射蚀刻来去除基板25表面上的氧化物和污染物的蚀刻室14以及两个装载锁定室(load lockchamber)15A和15B被连接到传送室12,传送室12包括作为基板传送机构11的两个基板传送机器手11A和11B。在溅射沉积室13A至13E中,溅射沉积室13A、13C和13E均包括一个溅射阴极31,溅射沉积室13B和13D均包括五个溅射阴极31。注意,可以使用一个基板传送机器手作为图1中说明的基板传送机构11。
以上所有室以及装载锁定室15A和15B均优选地具有用于将室排气为真空的真空泵,并且除了装载锁定室15A和15B以外的室一直维持在真空状态。这里,在以下将说明的所有实施方式中,假定所有室和装载锁定室都具有真空泵。
当在处理前将基板25从大气中带入装载锁定室15A和15B时以及当在处理后将基板25取出到大气中时,装载锁定室15A和15B被维持为具有与大气压相同的压力。另一方面,当布置在装载锁定室15A和15B中的基板25被传送到排气成真空状态的传送室12中时以及当处理后将基板25从传送室12取回时,装载锁定室15A和15B被排气成真空状态。装载锁定室15A和15B的数量并非必须是两个,也可以是一个。
闸阀16被设置在溅射沉积室13A、溅射沉积室13B、溅射沉积室13C、溅射沉积室13D、溅射沉积室13E和处理室14中的每一个与各装载锁定室15A和15B之间。除了传送基板25时各闸阀16均被关闭。基板传送机器手11被构造成从装载锁定室15A或15B中取出基板25并通过电脑程序的指令将基板25传送到期望的室中。
在均包括有多个溅射阴极31的溅射沉积室13B和溅射沉积室13D中,如图2所示,多个溅射阴极31均被布置在溅射沉积室13B和溅射沉积室13D的上部。在溅射沉积室13B和溅射沉积室13D的内侧的下部均设置有基板台33,基板台33通过设置在溅射沉积室13B和13D外侧的的动力源(图中未示出)而可转动。用于薄膜沉积的基板25至少在膜沉积过程中被载置在基板台33上。在图2中,各溅射阴极31均包括溅射靶32,溅射靶32由与形成多层薄膜的各层的膜的类型相应的材料制成,并且各溅射靶32以使溅射靶32的表面面向基板台33的大致中心方向的方式倾斜地布置。注意,溅射阴极31并非必须倾斜地布置,还可以布置成使溅射靶32的表面大致与基板25的表面平行。
当薄膜形成在该沉积室中时,优选地,在基板台33转动的同时,对期望的溅射阴极31施加DC或RF电力,并且在达到期望的膜厚时切断电力供给。可以在基板25和溅射靶32之间布置挡板(shutter),并且在施加电力时可以通过打开和关闭挡板来控制膜厚。当形成多层薄膜时,可以在基板被载置于转动的基板台33的状态下顺次进行以上的膜形成操作。这里,在图1中,在溅射沉积室13B中布置了四种溅射阴极31,并且这四种溅射阴极31的材料为PtMn、CoFe、Ru和CoFeB。此外,闸阀16经由O形环34被设置在溅射沉积室13B的侧壁上。此外,在溅射沉积室13D中布置了四种溅射阴极31,并且这四种溅射阴极31的材料为PtMn、CoFe、Ru和CoFeB。此外,闸阀16经由O形环34被设置在真空室13A的侧壁上。
如图3所示,在各自包括一个溅射阴极31的溅射沉积室13A、13C和13E中,包括有多个溅射阴极的溅射沉积室中可以仅布置一个溅射阴极并且可以进行相同的膜形成操作。优选地,为了获得更高的膜沉积率,该溅射阴极被布置成具有比布置在包括有多个溅射阴极的溅射沉积室中的溅射阴极的尺寸大的尺寸。可选地,如图4所示,溅射阴极可以被布置成使溅射靶的表面与基板表面大致平行。在这种情况下,基板台不需要特别地进行转动。这里,在图1中,在溅射沉积室13A中布置一个靶32并且该靶32的材料是能够形成氧化物膜、氮化物膜或半导体膜的材料。此外,在溅射沉积室13C中布置一个靶32并且该靶32的材料是能够形成厚度不小于10nm的金属膜的材料。此外,在溅射沉积室13E中布置一个靶32并且该靶32的材料是能够形成厚度不小于10nm的金属膜的材料。注意,在图1中,由能够形成厚度不小于10nm的金属膜的材料形成的靶可以被布置在溅射沉积室13A中,而由能够形成氧化物膜、氮化物膜或半导体膜的材料形成的靶可以被布置在溅射沉积室13C或溅射沉积室13E中。也就是,在各自包括一个溅射阴极的溅射沉积室13A、13C和13E中的至少一个溅射沉积室中,可以形成厚度比其它膜的厚度大(例如,不小于10nm)的膜。
进行除溅射沉积以外的处理的处理室14被连接到传送室12。作为处理室14,可以采用利用等离子体、离子束、原子束、分子束以及气体团束(gas clusterbeam)来去除形成在基板上或形成在基板上方的薄膜的处理室。对于其它示例,作为处理室14,可以采用通过化学气相沉积法而在形成在基板上的薄膜上或形成在基板上方的薄膜上形成薄膜的处理室;或采用用于使形成在基板上或形成在基板上方的薄膜在气体、中性活性种、离子或其混合气氛中发生化学反应的处理室;或采用用于加热、冷却或加热并冷却基板的处理室。
图7示出的是处理室14的内部结构。处理室14包括真空室21,并且在该真空室21中设置上部电极22和下部电极23。上部电极22接地,下部电极23经由匹配箱24连接到RF电源(高频电源)60。基板25被放置在下部电极23上。当等离子体产生条件成立时,在上部电极22和下部电极23之间产生等离子体26。
作为以上处理室14中的处理操作的典型示例,将0.075Pa的Ar气体引入到真空室21内部,对下部电极23施加15W(单位面积为0.029W/cm2)的RF电力以产生等离子体26,并且在基板偏置电压(Vdc)为包含在小于0V并且不小于-300V的范围内的电压的条件下进一步进行等离子体处理。基板偏置电压的上限值优选地为-2V至-3V,并且最为优选的电压为包含在从-15V到基板偏置电压的上限值的范围内的电压。该电压是能够产生等离子体的电压。关于待被引入真空室21的处理气体,可以使用诸如Kr、Xe、Ne等惰性气体或类似气体来代替Ar。处理室14中的处理气体压力被设定为0.01至100pa范围内的低压力。
接下来,将利用附图说明本发明的实施方式。
(第一实施方式)
图5是通过使用根据本发明的实施方式的制造设备制造的隧道型磁阻元件(磁阻多层膜)的膜构成图。在基板25上形成包括Ta层41、PtMn层42、CoFe层43、Ru层44、CoFeB层45、MgO层46、CoFeB层47、Ta层48、Ru层49和Ta层50的堆叠体。也就是,在基板25上,Ta层41形成为膜厚为20nm的基层,接着形成膜厚为15nm的反铁磁性材料的PtMn层42,接下来形成膜厚为2.5nm的铁磁性材料的CoFe层43,形成膜厚为0.9nm的非磁性材料的Ru层44,形成膜厚为3nm的铁磁性材料的CoFeB层45并且形成膜厚为1.2nm的氧化物的MgO层46。接下来,再次形成膜厚为3nm的铁磁性材料的CoFeB层47,在CoFeB层47上形成膜厚非常小(1.5nm)的Ta层48,然后形成膜厚分别为10nm和50nm的Ru层49和Ta层50。底部的Ta膜41和顶部的Ta膜50具有非常大的厚度,PtMn层42和上方的Ru层49具有次一级大的厚度。另一方面,对于CoFe层43至中间的Ta层47,堆叠的薄层中的每一层的膜厚不大于3nm。此外,仅MgO层46是氧化物。在图5中,Ta层41起到基层的作用,PtMn层42起到反铁磁性层的作用,铁磁性CoFe层43、非磁性Ru层44以及铁磁性CoFeB层45的堆叠层起到磁化固定层的作用,MgO层46起到非磁性绝缘层的作用,CoFeB层47起到磁化自由层的作用,Ta层48、Ru层49和Ta层50的堆叠层起到保护层的作用。
图1示出了适于在这种多层薄膜的沉积中在维持低成本的同时提高生产量并且通过防止或减少层间交叉污染来进一步抑制装置特性劣化的制造设备。
如上所述,在图1中,各自包括一个溅射阴极的三个溅射沉积室、各自包括两个或更多溅射阴极的两个溅射沉积室以及用于进行除溅射以外的处理的一个处理室围绕包括基板传送机构的传送室设置。如以下将说明的,从提高生产量的观点出发,需要至少三个各自包括一个溅射阴极的溅射沉积室和至少两个各自包括两个或更多溅射阴极的溅射沉积室。
当通过使用图1的设备来制造图5说明的隧道型磁阻元件(磁阻多层膜)时,Ta靶32被安装到溅射沉积室13A和13E中的每一个中并且被用于形成均在图5中示出的底部的Ta膜41和顶部的Ta膜47。PtMn、CoFe、Ru和CoFeB这四个溅射靶32被安装到溅射沉积室13B并且留下剩余的一个溅射阴极31备用。MgO烧结靶32被安装到溅射沉积室13C。CoFeB、Ta和Ru这三个靶32被安装到溅射沉积室13D,并且留下剩余的两个溅射阴极31备用。
尽管一个多层薄膜包括具有相同膜类型的多个层而溅射靶32布置到每一层的原因是为了实现所谓的连续基板传送,在连续基板传送中,基板25在一系列膜沉积处理中不会传送到同一处理室中两次。也就是说,当具有相同膜类型的多个层形成为不同的厚度时,较薄的层由均包括一个溅射阴极的三个溅射沉积室中的至少一个形成,较厚的层由这三个溅射沉积室中的其它沉积室形成。因此,可以形成具有相同类型但具有不同厚度的层而不必使基板被传送到同一溅射沉积室中两次。当实现这种连续的基板25的传送时,各基板25的处理时间条(process time bar)在用于连续处理多个基板25的处理时间条表中能够重叠,因此能够极大地提高生产量。闸阀16设置在溅射沉积室13A到溅射沉积室13E以及蚀刻室14中的每一个和各装载锁定室15A和15B之间。这里,附图标记35表示用于在两个基板传送机器手11A和11B接收并送出基板25时暂时地载置基板25的载置台,并且可以分别设置基板25的位置对齐机构和基板25的缺口对齐机构。
下面的表1示出了在图1的设备构造中的处理时间表。
[表1]
[sec]
生产量=20.0
将按照表1的处理时间表来说明图5中说明的隧道型磁阻元件的膜形成顺序。通过使用基板传送机器手11A将未处理基板25从装载锁定室15A传送至蚀刻室14(表1的处理1),基板25表面上的氧化物和污染物通过蚀刻室14中的反溅射蚀刻被去除(表1的处理2)。接下来,通过基板传送机器手11A将基板25载置在传送室12内的载置台35上(表1的处理3)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13A,并且在基板25上沉积膜厚为20nm的Ta层作为基层(表1的处理4)。接下来,沉积有Ta层的基板25通过基板传送机器手11B被传送至溅射沉积室13B(表1中的处理5),并且,在基板25上,沉积15nm的反铁磁性材料的PtMn层42,并且相继地,沉积2.5nm的铁磁性材料的CoFe层43,沉积0.9nm的非磁性材料的Ru层44,沉积3nm的铁磁性材料的CoFeB层45(表1的处理6)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13C(表1的处理7)并且沉积1.2nm的氧化物的MgO层46(表1的处理8)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13D(表1的处理9),在基板25上再次沉积3nm的CoFeB层47,在CoFeB层47上沉积厚度非常小(1.5nm)的Ta层48,然后沉积10nm的Ru层49和50nm的Ta层50(表1的处理10)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13E(表1的处理11),并且沉积50nm的Ta层50(表1的处理12)。接下来,通过基板传送机器手11A将基板25传送至装载锁定室15B(表1的处理13)。
如图1的处理时间表所示,需要最长节拍时间的处理室是溅射沉积室13B,其节拍时间为180秒。生产量受该节拍时间限制,由此得出的生产量为20晶片/小时。在此,在本说明书中,“节拍时间”意指从基板被传送至某个室中到基板在处理后被传送出该某个室的时间。此外,在本说明书中,生产量意指单位时间内能够处理的基板工件的数量。
如上所述,溅射沉积室13B和溅射沉积室13D中的每一个均具有备用的溅射阴极31,因此,PtMn靶和Ru靶能够被分别安装到室13B的阴极31和室13D的阴极31,并且能够利用使两个溅射阴极31同时放电的共溅射方法。由此,膜沉积率增加两倍,并且可以将表1的处理6中的PtMn以及表1的处理10中的Ru的沉积时间减少至一半。
[表2]
[sec]
*共溅射
生产量=25.7
这种情况下的处理时间表由上表2的处理6和处理10规定,尽管溅射沉积室13B仍然限制节拍时间,但是溅射沉积室13B的节拍时间从180秒减少至140秒,溅射沉积室13D的节拍时间从145秒减少至110秒。因此,生产量被提升至25.7晶片/小时。
作为比较例,表3示出了通过使用专利文献1中说明的溅射设备来形成图5中说明的隧道型磁阻元件的时间表。
[表3]
[sec]
*共溅射
生产量=12.2
如上表3所示,溅射沉积室C的节拍时间是295秒,而生产量是12.2。注意,另外,在设备构造图1中,当处理室的位置被切换时,表1和表2所示的生产量仅在溅射靶以能够实现基板25的连续传送的方式布置时才能够维持。
(第二实施方式)
当第一实施方式中的用于MgO膜沉积的溅射沉积室被使用化学气相沉积法的沉积室代替时,也能够达到相同效果。
(第三实施方式)
图6是示出根据本发明的另一实施方式的制造设备的图,该制造设备被用于制造图5所示的隧道型磁阻元件。在包括作为基板传送机构的三个基板传送机器手11A、11B和11C的传送室12处,连接有附图标记为13A至13G的七个溅射沉积室、用于通过反溅射蚀刻来去除基板25表面上的氧化物和污染物的蚀刻室14以及两个装载锁定室15A和15B。在溅射沉积室13A至13G中,溅射沉积室13C包括五个溅射阴极,溅射沉积室13E包括两个溅射阴极。另一方面,溅射沉积室13A、13B、13D、13F和13G中的每一个均包括一个溅射阴极。包括两个或更多阴极的第一溅射沉积室(溅射沉积室13C或13E)用于形成上述磁化固定层、上述磁化自由层或上述保护层的部分层(Ta层47)。包括一个溅射阴极的第二溅射沉积室(溅射沉积室13A、13B、13D、13F或13G)用于形成上述基层、上述反铁磁性层、上述非磁性绝缘层和上述保护层的除了前述部分层以外的层(Ta层50)。处理室(蚀刻室14)用于蚀刻。注意,第一溅射沉积室可以包括由相同材料制成的两个或更多靶,用于进行共溅射。
Ta靶安装到溅射沉积室13A,PtMn靶安装到溅射沉积室13B,CoFe靶、Ru靶以及两个CoFeB靶31安装到溅射沉积室13C,并且留下剩余的一个阴极备用。两个CoFeB靶31用于共溅射。MgO靶安装到溅射沉积室13D,CoFeB靶和Ta靶安装到溅射沉积室13E,并且溅射沉积室13F和13G各安装有一个Ta靶。
本实施方式中的处理时间表在表4中示出。
[表4]
[sec]
生产量=36.0
将按照上表4的处理时间表来说明图5中说明的隧道型磁阻元件的膜形成顺序。通过基板传送机器手11A将未处理基板25从装载锁定室15A传送至蚀刻室14(表4的处理1),基板25表面上的氧化物和污染物通过蚀刻室14中的反溅射蚀刻被去除(表4的处理2)。接下来,通过基板传送机器手11A将基板25载置在传送室12内的载置台35A上(表4的处理3)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13A,并且在基板25上沉积膜厚为20nm的Ta层作为基层(表4的处理4)。接下来,通过基板传送机器手11B将基板25载置在传送室12中的载置台35B上(表4的处理5)。接下来,通过溅射法在基板25上沉积膜厚15nm的反铁磁性材料的PtMn层42(表4的处理6)。接下来,通过基板传送机器手11C将基板25传送至溅射沉积室13C(表4的处理7),并且在基板25上分别沉积3nm和1.2nm的铁磁性材料的CoFeB层45和氧化物的MgO层46,并且通过共溅射法沉积膜厚为3nm的铁磁性材料的CoFeB层45(表4的处理8)。
接下来,通过基板传送机器手11C将基板25传送至溅射沉积室13D(表4的处理9),并且通过溅射法在基板25上沉积1.2nm的氧化物的MgO层46(表4的处理10)。接下来,通过基板传送机器手11C将基板25传送到溅射沉积室13E中(表4的处理11),再次沉积3nm的铁磁性材料的CoFeB层47,并且在CoFeB层47上沉积厚度非常小(1.5nm)的Ta层48(表4的处理12)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13F(表4的处理13),并且沉积10nm的Ru层49(表4的处理14)。接下来,通过基板传送机器手11B将基板25传送至溅射沉积室13G(表4的处理15),并且沉积50nm的Ta层50(表4的处理16)。接下来,通过基板传送机器手11A将基板25传送至装载锁定室15B(表4的处理17)。
当图5中说明的隧道型磁阻元件以这种方式按照表5的处理时间表形成时,用于各室的节拍时间变得更均匀,并且具有最长节拍时间的溅射沉积室B的节拍时间为100秒。由于在图6中示出的设备构造中实现了连续地基板传送,所以得到的生产量提高到36晶片/小时。注意,在设备构造图6中当处理室的位置被切换时,表4示出的生产量仅在溅射靶以能够实现连续的基板传送的方式布置时得以维持。
(第一比较例)
作为第一比较例,在表5中将示出当图5说明的隧道型磁阻元件是通过使用专利文献4说明的溅射设备形成时的时间表。
[表5]
[sec]
生产量=8.8
最初地,在专利文献4中说明的溅射沉积室中,仅有一个靶材(Ta)布置在第一真空室110中。因此,当试图通过使用专利文献4中说明的溅射设备的溅射设备来形成图5中说明的隧道型磁阻元件时,需要通过真空室112来沉积除Ta层以外的层。此外,专利文献4中说明的溅射设备不包括进行除溅射以外的处理的处理室,因此该溅射设备不能进行上表5中的处理12(氧化处理)。因此,以上的表5假设以下情形:图5中说明的隧道型磁阻元件由图1的制造设备形成,其中为专利文献4说明的溅射设备设置处理室。专利文献4中说明的溅射设备的节拍时间(在专利文献4的情况下是第二真空室112的总时间)是405秒,并且生产量是8.8(晶片/小时)。显然地,该生产量与根据本发明的实施方式的图1的设备构造的生产量相比相当差。此外,在专利文献4说明的溅射设备的情况中,在一系列膜沉积处理中,基板被两次传送至同一处理室因此不能实现所谓的连续基板传送。
(第二比较例)
作为第二比较例,表6将示出当通过使用专利文献5说明的溅射设备形成图5中说明的隧道型磁阻元件时的处理时间表。
表6中示出专利文献5中说明的溅射设备的处理时间表。
[表6]
[sec]
生产量=8.1
最初地,专利文献5公开的溅射系统600并不包括进行除溅射之外的处理的处理室,因此不能进行氧化处理。此外,为了通过使用专利文献5公开的溅射系统600来实现所谓的连续基板传送,上表6中的MgO到CoFeB、Ta和Ru的所有的膜沉积都需要通过多靶离子束溅射模块608来进行。在这种情形下,除了由于低的溅射率而需要长时间的MgO膜沉积以外,在同一个室中沉积三个金属层,因此节拍时间变成445.0秒且生产量变成8.1晶片/小时。此外,氧化物和金属在同一室中的沉积导致了金属层中的氧化污染,还导致了使膜特性劣化的所谓的交叉污染问题。因此,通过使用专利文献5中公开的溅射系统600,并不能实现所谓的连续基板传送,也不能提高生产量。
Claims (8)
1.一种制造设备,其用于在基板上生长多层膜,所述制造设备包括:
传送室,其包括基板传送机构;
第一溅射沉积室,其包括一个溅射阴极;
第二溅射沉积室,其包括一个溅射阴极;
第三溅射沉积室,其包括一个溅射阴极;
第四溅射沉积室,其包括两个或更多溅射阴极;
第五溅射沉积室,其包括两个或更多溅射阴极;以及
处理室,其用于进行除溅射以外的处理,其中
所述第一溅射沉积室、所述第二溅射沉积室、所述第三溅射沉积室、所述第四溅射沉积室、所述第五溅射沉积室以及所述处理室以使得各室能够利用所述传送室进行所述基板的送出和接收的方式配置在所述传送室的周围。
2.根据权利要求1所述的制造设备,其特征在于,
所述多层膜是包括如下膜的多层膜:第一膜,其包括厚度不小于10nm的金属膜;第二膜,其包括厚度不小于10nm的金属膜;和第三膜,其包括氧化物膜、氮化物膜和半导体膜中的至少一层,并且
所述第一溅射沉积室形成所述第一膜,所述第二溅射沉积室形成所述第二膜,并且所述第三溅射沉积室形成所述第三膜。
3.根据权利要求1所述的制造设备,其特征在于,
所述传送室包括基板传送机器手,所述基板传送机器手用于在所述传送室和所述第一至第五溅射沉积室之间传送所述基板。
4.根据权利要求1所述的制造设备,其特征在于,
所述传送室维持为真空。
5.根据权利要求1所述的制造设备,其特征在于,
所述处理室是用于利用等离子体、离子束、原子束、分子束或气体团束来去除形成在所述基板上或形成在所述基板上方的薄膜的处理室。
6.根据权利要求1所述的制造设备,其特征在于,
所述处理室是用于通过化学气相沉积法在形成在所述基板上的薄膜上或形成在所述基板上方的薄膜上形成薄膜的处理室。
7.根据权利要求1所述的制造设备,其特征在于,
所述处理室是用于使形成在所述基板上或形成在所述基板上方的薄膜在气体、中性活性种、离子或其混合气氛中发生化学反应的处理室。
8.根据权利要求1所述的制造设备,其特征在于,
所述处理室是用于加热、冷却或加热并冷却所述基板的处理室。
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TWI480970B (zh) | 2015-04-11 |
KR20130088200A (ko) | 2013-08-07 |
TW201511169A (zh) | 2015-03-16 |
WO2012090395A1 (ja) | 2012-07-05 |
US9039873B2 (en) | 2015-05-26 |
KR20140128437A (ko) | 2014-11-05 |
US20150001068A1 (en) | 2015-01-01 |
TWI528489B (zh) | 2016-04-01 |
JPWO2012090395A1 (ja) | 2014-06-05 |
KR101786868B1 (ko) | 2017-10-18 |
US9752226B2 (en) | 2017-09-05 |
US20130277207A1 (en) | 2013-10-24 |
DE112011104627T5 (de) | 2013-10-02 |
JP5650760B2 (ja) | 2015-01-07 |
CN103403215B (zh) | 2016-01-06 |
US20170101708A1 (en) | 2017-04-13 |
KR101522992B1 (ko) | 2015-05-26 |
TW201241957A (en) | 2012-10-16 |
KR20150091529A (ko) | 2015-08-11 |
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