CN103383457B - 近接感测器及其制法 - Google Patents

近接感测器及其制法 Download PDF

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CN103383457B
CN103383457B CN201210552379.8A CN201210552379A CN103383457B CN 103383457 B CN103383457 B CN 103383457B CN 201210552379 A CN201210552379 A CN 201210552379A CN 103383457 B CN103383457 B CN 103383457B
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wafer
photosensitive
adhesive tape
luminescent
sensor
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CN103383457A (zh
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林淑萍
陈俊吉
洪宗裕
张夷华
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UPI Semiconductor Corp
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UPI Semiconductor Corp
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Abstract

本发明是一种近接感测器及其制法，其包含有一感光单元、一发光单元、复数透明胶层与一封装体，该封装体系包覆该感光单元与该发光单元，该些透明胶层分别形成在感光单元与发光单元的表面，透明胶层顶面具有一环状凸部，封装体对应感光部与发光部区域分别形成一通孔，其中通孔系连通该环状凸部所包围之区域而构成一凹口；在进行封胶的制程中，未固化的透明胶层具有可塑性，当压模压在透明胶层上时，压模上的凸块将陷入透明胶层内，使凸块与透明胶层紧密接触，当注入黑胶时，可避免黑胶渗入凸块与透明胶层之间。

Description

近接感测器及其制法
技术领域
本发明是关于一种近接感测器及其制法，特别是指利用封装体包覆感光晶片与发光晶片的近接感测器及其制法。
背景技术
近接感测器系一种光的感测装置，请参考图5所示，已知的近接感测器60主要包含有一底板61、一金属遮罩62、一发光元件63与一感光元件64。
该底板61与金属遮罩62对合而成为一壳体，该金属遮罩62的内部具有一隔板620，用以分隔出两个腔室621，该两腔室621分别在金属遮罩62的表面形成开口622；该发光元件63与感光元件64分别设于该两腔室621内。只要一物体65够接近该近接感测器60，物体65将反射由发光元件63所发出的光线，该感光元件64可检测出被物体65反射的光线。
然而，近接感测器的体积较小，而金属遮罩62系采用冲压技术制成的构件，制造小体积的金属遮罩62难度较高，故需要较高的成本制造。
请参考美国专利公告第US8,097,852号所揭露的近接感测器，其透过二次封胶的制法形成近接感测器，制法如下所述：
请参考图6A所示，在一导线架70上设置发光晶片71与感光晶片72后，系在该两晶片71、72上分别形成透明胶层73，使该两透明胶层73分别包覆该两晶片71、72，上述为第一次封胶。
请参考图6B所示，待该两透明胶层73固化后，将一压模74设于该两透明胶层73上，其中该压模74具有两凸部740，该两凸部740分别压抵在透明胶73的表面。
请参考图6C所示，填充黑胶75，即为第二次封胶，令黑胶75包覆晶片71、72以阻隔水气与杂质，避免该些晶片71、72受到污染，确保产品品质。
请参考图6D所示，待黑胶75固化后即移除压模，原先被压模之凸部740所占的空间分别形成透光孔750，是以，该感光晶片71得以透过透光孔750以感测外界的光线，而该发光晶片72得以发射光线到外界。
在前案的制法中，如图6C所示，在执行黑胶填充的制程中，由于透明胶层73已经固化，且因透明胶层73内部设有感光晶片71与发光晶片72，该压模74施于透明胶层73的压力不可过大，以避免压模74压坏感光晶片71与发光晶片72，因此凸部740与透明胶层73之间的密合度不佳；此时，黑胶75系以射出方式成形在压模74与导线架70之间，黑胶75因射出成型的压力会渗入凸部740与透明胶层73之间，请参考图6D所示，将造成透明胶层73的表面形成残留黑胶751。
感光晶片71是用于感测周遭环境光线强度的变化，当该发光元件72所发出的光被物体反射至感光元件71时，该感光晶片71即可感应出光线强度的差异，因此让感光晶片71与发光晶片72可正常发出、接收光线系相当重要的。然而，若透明胶层73的表面形成残留黑胶751，不论是发光晶片72所发出的光线，或感光晶片71所感测到的光线，都将受到残留黑胶751的遮蔽，导致近接感测器的准确度降低。
发明内容
有鉴于残留黑胶导致近接感测器准确度降低的问题，本发明的主要目的在于提供一种近接感测器及其制法，在封胶的过程中，避免黑胶形成在感光晶片与发光晶片上方，而导致遮蔽感光晶片与发光晶片。
为达前揭目的，本发明所采用的技术手段是令该近接感测器包含有：
一感光单元，具有一感光部；
一发光单元，具有一发光部；
复数透明胶层，分别形成在该感光单元与发光单元的表面，各透明胶层之表面系形成一环状凸部；及
一封装体，包覆该感光单元与该发光单元，该封装体的顶面对应该感光部与发光部的区域分别形成一通孔，该通孔连通该环状凸部所包围之区域而构成一凹口。
为达前揭目的，本发明所采用的技术手段是令该近接感测器的制法包含以下步骤：
准备一导电架，该导电架包含有一感光晶片座、一发光晶片座与复数个引脚；
在该感光晶片座及该发光晶片座上分别设置一感光晶片与一发光晶片，其中该感光晶片的顶面具有一感光部，该发光晶片的顶面具有一发光部；
利用复数导线将该感光晶片与发光晶片分别电连接到该些引脚；
在该感光部与发光部表面分别形成一透明胶；
利用一压模压入透明胶，其中该压模对应感光部与发光部区域具有凸块，当压模压入透明胶时，凸块的底部陷入透明胶，使透明胶包覆凸块的底缘；
在导电架与压模之间注入黑胶；
待黑胶与透明胶固化后，移除封装胶带与压模，其中黑胶固化而成为一封装体；及
切割该封装体，以获得近接感测器。
综上所述，在进行封胶的制程中，由于透明胶仍具有可塑性，当压模下压在透明胶上时，压模的凸块会系陷入透明胶的顶端，透明胶将包覆凸块的底部，因此凸块的底部与透明胶之间系紧密接触的，故当黑胶注入时，黑胶无法渗进凸块与透明胶层之间，藉此避免黑胶形成在感光部与发光部上方，进而提升近接感测器的准确度。
附图说明
图1：本发明制法较佳实施例的流程示意图。
图2A~2G：本发明流程中各阶段的半成品示意图。
图3：本发明近接感测器的侧视示意图。
图4：图3的局部放大图。
图5：已知近接感测器的侧视示意图。
图6A~6D：另一已知近接感测器在制程中的半成品示意图。
主要元件符号说明：
10导电架100封装胶带
11感光晶片座12发光晶片座
13引脚110感光晶片
111感光部120发光晶片
121发光部14粘着层
15导线16透明胶
160环状凸部
17凹口20压模
21基板22凸块
30黑胶40感光单元
400感光晶片座401感光晶片
402引脚403感光部
404导线405胶层
41发光单元410发光晶片座
411发光晶片412引脚
413发光部414导线
415胶层42透明胶层
421凹部422环状凸部
43封装体
431通孔60近接感测器
61底板62金属遮罩
620隔板621腔室
622开口63发光元件
64感光元件65物体
70导线架71发光晶片
72感光晶片73透明胶层
74压模740凸部
75黑胶750透光孔
751残留黑胶
具体实施方式
请参考图1所示，系本发明近接感测器的制程流程图，以下配合图2A~图2G说明本发明的制法与结构。
请参考图2A所示，首先准备一导电架10(101)，该导电架10包含有一感光晶片座11、一发光晶片座12与复数个引脚13，该些引脚13设置于该感光晶片座11与发光晶片座12的周边。在封装的制程中，该导电架10系设于一封装胶带(tape)100上，由封装胶带100带领导电架10进行接下来的制程。
请参考图2B所示，在该感光晶片座11及该发光晶片座12上分别设置一感光晶片110与一发光晶片120(102)，该感光晶片110的顶面具有一感光部111用以感测光线，该发光晶片120的顶面具有一发光部121用以发出光线，该些晶片110、120与晶片座11、12之间可由一粘着层14粘合，该粘着层14可为一环氧树酯(Epoxy)层；其中，该感光晶片110可为一环境光源感测元件(ALSsensor)，该发光晶片120可为一红外线(IR)发射元件。
请参考图2C所示，系进行一打线制程(103)，感光晶片110与发光晶片120的顶面分别具有电极，将感光晶片110与发光晶片120的电极分别透过导线15电连接到该些引脚13。
请参考图2D所示，系进行一点胶制程(104)，以在该感光晶片110的感光部111与该发光晶片120的发光部121表面分别形成一透明胶16。
请参考图2E所示，进行封胶制程(105)。在该些透明胶16完全固化之前，利用一压模20压入透明胶16，该压模20具有一基板21及复数个形成在基板21底面的凸块22，该些凸块22的位置分别对应到该些透明胶16的位置；当压模20压入透明胶16时，由于透明胶16尚未固化而具有可塑性，凸块22将陷入于透明胶16的顶端，透明胶16顶端进而包覆凸块22的底缘，此时在导电架10与压模20之间注入黑胶30，令黑胶30包覆该些晶片110、120与导线414，并填满压模20与导电架10之间的间隙。
请参考图2F所示，待黑胶30与透明胶16固化后，移除封装胶带100与压模20(106)，原本凸块22所占的空间形成凹口17，该黑胶30固化而形成一封装体，透明胶16固化、定形而成为透明胶层，对于凹口17而言，该透明胶层系在其底部形成环状凸部160，该感光晶片110、感光晶片座11、发光晶片120、发光晶片座12与引脚13系被固定在该封装体内而不致位移或脱落。
请参考图2G所示，切割封装体，以获得本发明的近接感测器(107)。
综上所述，请参考图3所示，本发明近接感测器包含有一感光单元40、一发光单元41、复数个透明胶层42与一封装体43。
该感光单元40包含有一感光晶片座400、一感光晶片401与复数个引脚402，该感光晶片401设于该感光晶片座400上且具有一感光部403与复数个电极，该些电极系透过导线404而连接到引脚402，该感光晶片401与感光晶片座400之间设有一胶层405，以使感光晶片401固接于感光晶片座400上。
该发光单元41包含有一发光晶片座410、一发光晶片411与复数个引脚412，该发光晶片411设于该发光晶片座410上且具有一发光部413与复数个电极，该些电极系透过导线414而连接到引脚412，该发光晶片411与发光晶片座410之间设有一胶层415，以使发光晶片411固接于发光晶片座410上。
该些透明胶层42分别形成在感光单元40与发光单元41的表面，且该些透明胶层42的表面对应感光部403与发光部413的区域分别形成一环状凸部422，该环状凸部422所包围的区域形成凹部421。
该封装体43系包覆该感光单元40与该发光单元41，该些引脚402、412系外露于该封装体43的底面，该封装体43的顶面对应该感光部403与发光部413区域分别形成一通孔431，通孔431系连通透明胶层42的凹部421，其中该通孔431与凹部421构成如图2G所示的凹口17。
是以，该发光晶片411发出的光线可穿透该透明胶层42而投射到外界，外界环境的光线可穿透感光晶片401上方的透明胶层42，以供该感光晶片401感应出外界的光线变化。
综上所述，请参考图4所示，在进行封胶制程中，由于在透明胶层42未固化前，压模的凸块即已压入透明胶层42的顶端，此时透明胶层42具有可塑性，令凸块凹入于透明胶层42的顶端，因此凸块的底部与透明胶层42之间系紧密接触的，故当黑胶注入时，黑胶无法渗进凸块与透明胶层42之间，确保黑胶不会形成在感光晶片401的感光部403及发光晶片的发光部。
相较于已知技术利用金属遮罩隔离发光元件与感光元件，本发明系采用黑胶作为阻隔体，避免发光元件产生的光直接影响该感光元件，此外，发光元件与感光元件表面设有透明胶层，该些透明胶层是经过点胶制程而得，封胶或点胶制程的成本系低于生产金属遮罩的成本，故本发明的成本系有效降低。

Claims (8)

1.一种近接感测器，其特征在于，所述的近接感测器包含有：
一感光单元，具有一感光部；
一发光单元，具有一发光部；
复数透明胶层，分别形成在所述的感光单元与发光单元的表面，各透明胶层之表面系形成一环状凸部；利用一压模压入透明胶，其中所述的压模对应感光部与发光部区域具有凸块，当压模压入透明胶时，凸块的底部陷入透明胶，使透明胶包覆凸块的底缘，从而形成所述环状凸部；
及
一封装体，包覆所述的感光单元与所述的发光单元，所述的封装体的顶面对应所述的感光部与发光部的区域分别形成一通孔，所述的通孔连通所述的环状凸部所包围之区域而构成一凹口；注入黑胶形成所述封装体。
2.如权利要求1所述的近接感测器，其特征在于：
所述的感光单元包含：
一感光晶片座；
复数个引脚，系外露于所述的封装体；及
一感光晶片，设于所述的感光晶片座上且电连接所述的引脚，所述的感光晶片具有所述的感光部；
所述的发光单元包含：
一发光晶片座；
复数个引脚，系外露于所述的封装体；及
一发光晶片，设于所述的发光晶片座上且电连接所述的引脚，所述的发光晶片具有所述的发光部。
3.如权利要求2所述的近接感测器，其特征在于，所述的感光晶片与发光晶片系分别透过导线而电连接到所述的引脚。
4.如权利要求3所述的近接感测器，其特征在于，所述的感光晶片与感光晶片座之间设有一胶层，且所述的发光晶片与发光晶片座之间设有另一胶层。
5.如权利要求4所述的近接感测器，其特征在于，所述的感光晶片为一环境光源感测元件，所述的发光晶片为一红外线发射元件。
6.一种近接感测器的制法，其特征在于，步骤包含：
准备一导电架，所述的导电架包含有一感光晶片座、一发光晶片座与复数个引脚；
在所述的感光晶片座及所述的发光晶片座上分别设置一感光晶片与一发光晶片，其中所述的感光晶片的顶面具有一感光部，所述的发光晶片的顶面具有一发光部；
利用复数导线将所述的感光晶片与发光晶片分别电连接到所述的引脚；
在所述的感光部与发光部表面分别形成一透明胶；
利用一压模压入透明胶，其中所述的压模对应感光部与发光部区域具有凸块，当压模压入透明胶时，凸块的底部陷入透明胶，使透明胶包覆凸块的底缘；
在导电架与压模之间注入黑胶；
待黑胶与透明胶固化后，移除封装胶带与压模，其中黑胶固化而成为一封装体；及
切割所述的封装体，以获得近接感测器。
7.如权利要求6所述近接感测器的制法，其特征在于，在设置感光晶片与发光晶片的步骤中，所述的感光晶片座与感光晶片之间形成一胶层，所述的发光晶片座与发光晶片之间形成另一胶层。
8.如权利要求7所述近接感测器的制法，其特征在于，所述的胶层为环氧树酯层。
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