CN104752597A - 发光二极管封装结构及其封装方法 - Google Patents
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Abstract
一种发光二极管封装结构,包括封装体、发光二极管晶粒、不透光的绝缘层以及两个引脚,该发光二极管晶粒嵌设在封装体底部,且该发光二极管晶粒的两个电极从封装体的底部暴露出来;该绝缘层覆盖封装体底部,且该绝缘层在对应发光二极管晶粒的两个电极处镂空而形成暴露出各发光二极管晶粒两个电极的两个凹陷部;该两个引脚分别设置在两个凹陷部中的一者内,并且每个引脚自绝缘层的凹陷部向远离封装体的方向延伸并局部覆盖所述绝缘层远离封装体的表面。本发明还提供一种该发光二极管封装结构的封装方法。
Description
技术领域
本发明涉及一种半导体发光装置及其封装方法,尤其涉及一种发光二极管封装结构及其封装方法。
背景技术
相比于传统的发光源,发光二极管(Light Emitting Diode,LED)具有重量轻、体积小、污染低、寿命长等优点,其作为一种新型的发光源,已经被越来越多地应用到各领域当中,如路灯、交通灯、信号灯、射灯及装饰灯等。
现有的发光二极管封装结构,通常包括具有金属导电线路以及反射杯结构的引线框架、设置在引线框架的反射杯结构内并电连接至金属导电线路的发光二极管芯片、以及填充在反射杯结构内并覆盖发光二极管芯片的封装体。制作该种发光二极管封装结构时,通常事先制备导电铜板,然后通过嵌入成型(Insert Molding)工艺注塑聚对苯二酰对苯二胺(PPA)塑料,使得导电铜板嵌入PPA塑料而形成具有反射杯结构的引线框架,继而将发光二极管晶粒置入反射杯结构内并电连接至导电铜板,最后向反射杯结构内填充封装材料并固化封装材料形成封装体。
该种制造方法中“向反射杯结构内置入发光二极管晶粒”的步骤需要将发光二极管晶粒与导电铜板进行对位,由于对位机械设备的精度具有局限性,使得尺寸较小的发光二极管晶粒在反射杯结构内的封装位置精确度难以确保,从而影响整个封装元件的精度。
发明内容
有鉴于此,有必要提供一种高精度的发光二极管封装结构及其封装方法。
一种发光二极管封装结构,包括封装体、发光二极管晶粒、不透光的绝缘层以及两个引脚,该发光二极管晶粒嵌设在封装体底部,且该发光二极管晶粒的两个电极从封装体的底部暴露出来;该绝缘层覆盖封装体底部,且该绝缘层在对应发光二极管晶粒的两个电极处镂空而形成暴露出各发光二极管晶粒两个电极的两个凹陷部;该两个引脚分别设置在两个凹陷部中的一者内,并且每个引脚自绝缘层的凹陷部向远离封装体的方向延伸并局部覆盖所述绝缘层远离封装体的表面。
一种发光二极管封装方法,包括以下步骤:
第一步,提供一薄膜层并将多个发光二极管晶粒设置在薄膜层上,各发光二极管晶粒的两个电极均贴设在薄膜层上;
第二步,利用封装材料覆盖设置在薄膜层上的所述多个发光二极管晶粒,固化封装材料以形成底部嵌设有多个发光二极管晶粒、且底部被薄膜层覆盖的封装体;
第三步,移除薄膜层以露出嵌设有多个发光二极管晶粒的封装体底部以及各发光二极管晶粒的两个电极;
第四步,在封装体底部覆盖一层不透光的绝缘层,该绝缘层在对应各发光二极管晶粒的两个电极处镂空而形成暴露出各发光二极管晶粒两个电极的凹陷部;以及
第五步,在绝缘层的各个凹陷部内镀金属以形成与各发光二极管晶粒电极电连接的引脚,各个引脚自绝缘层的凹陷部向远离封装体的方向延伸并局部覆盖所述绝缘层远离封装体的表面。
与现有技术相比,上述封装方法先利用封装体包覆发光二极管晶粒、然后在封装体底部暴露出的发光二极管晶粒电极上直接镀上金属来制作引脚,可以有效保证镀上的金属引脚精确地与发光二极管晶粒电极形成电连接,由于该种方法不需采用引线框架,避免了传统发光二极管封装方法中将发光二极管晶粒与导电铜板对位操作而产生的精度缺陷,因此,该种方法封装得到的发光二极管封装结构具有封装精度高的优点。
下面参照附图,结合具体实施方式对本发明作进一步的描述。
附图说明
图1为本发明实施例提供的发光二极管封装结构剖视图。
图2为本发明实施例提供的发光二极管封装结构仰视图。
图3为本发明实施例提供的发光二极管封装结构俯视图。
图4至图8为本发明实施方式提供的发光二极管封装方法示意图。
主要元件符号说明
发光二极管封装结构 | 10 |
封装体 | 11 |
发光二极管晶粒 | 12 |
电极 | 120、122 |
绝缘层 | 13 |
凹陷部 | 130 |
表面 | 132 |
引脚 | 14 |
薄膜层 | 20 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
参见图1、图2及图3,本发明实施例提供的发光二极管封装结构10包括封装体11、发光二极管晶粒12、绝缘层13以及两个引脚14。
该封装体11由透光材料制成,如环氧树脂等,优选的,该封装体11内部混有荧光粉,以在发光二极管晶粒12的光激发下发出与发光二极管晶粒12发光波长不同的光线,从而混光得到预期颜色的光线。
该发光二极管晶粒12嵌设在封装体11底部,且该发光二极管晶粒12的两个电极120、122从封装体11的底部暴露出来。
该绝缘层13不透光且覆盖封装体11的底部,且该绝缘层13在对应电极120、122处镂空而形成暴露出电极120、122的两个凹陷部130。该绝缘层13的材质为环氧成型模料(Epoxy Molding Compound, EMC)或片状模塑料(Sheet Molding Compound, SMC)。
该两个引脚14分别设置在两个凹陷部130中的一者内,并且每个引脚14自绝缘层13的凹陷部130向远离封装体11的方向延伸并局部覆盖所述绝缘层13远离封装体11的表面132。
本发明实施例还提供一种发光二极管封装方法,该方法包括以下步骤。
第一步,参见图4,提供一薄膜层20并将多个发光二极管晶粒12设置在薄膜层20上,各发光二极管晶粒12的两个电极120、122均贴设在薄膜层20上。
本实施例中,可采用覆晶的方式将发光二极管晶粒12倒扣在薄膜层20上,以使发光二极管晶粒12的两个电极120、122均贴设在薄膜层20上。
第二步,参见图5,利用封装材料覆盖设置在薄膜层20上的所述多个发光二极管晶粒12,固化封装材料以形成底部嵌设有多个发光二极管晶粒12、且底部被薄膜层20覆盖的封装体11。
本实施例中,可通过模造的方式使封装材料覆盖所述薄膜层20设有发光二极管晶粒12的表面上。
第三步,移除薄膜层20以露出嵌设有多个发光二极管晶粒12的封装体11底部以及各发光二极管晶粒的两个电极120、122,如图6所示。
第四步,参见图7,在封装体11底部覆盖一层不透光的绝缘层13,该绝缘层13在对应各发光二极管晶粒12的两个电极120、122处镂空而形成暴露出各发光二极管晶粒两个电极120、122的凹陷部130。该绝缘层13的材质为环氧成型模料或片状模塑料。
第五步,参见图8,在绝缘层13的各个凹陷部130内镀金属以形成与各发光二极管晶粒12的电极120、122电连接的引脚14,各个引脚14自绝缘层13的凹陷部130向远离封装体11的方向延伸并局部覆盖所述绝缘层13远离封装体11的表面132。本实施例中,镀金属的方法可为电镀或者喷镀。
可选的,该种发光二极管封装方法还可以包括第六步:切割所述封装体11以及绝缘层13以形成多个发光二极管封装结构10,每个发光二极管封装结构10包含一个发光二极管晶粒12及两个引脚14。本实施例中,沿图8箭头所示对封装体11以及绝缘层13进行切割,以得到多个发光二极管封装结构10。
此外,需要说明的是,该种发光二极管封装方法第一步可以采用UV薄膜作为薄膜层20,从而在第三步移除薄膜层20时,可以先采用UV光照射UV薄膜以降低UV薄膜的粘度、然后移除UV薄膜。
与现有技术相比,上述封装方法先利用封装体11包覆发光二极管晶粒12、然后在封装体11底部暴露出的发光二极管晶粒12的电极120、122上直接镀上金属来制作引脚14,可以有效保证镀上的金属引脚14精确地与发光二极管晶粒12的电极120、122形成电连接,由于该种方法不需采用引线框架,避免了传统发光二极管封装方法中将发光二极管晶粒与导电铜板对位操作而产生的精度缺陷,因此,该种方法封装得到的发光二极管封装结构10具有封装精度高的优点。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种发光二极管封装结构,包括:
一个封装体;
一个发光二极管晶粒,该发光二极管晶粒嵌设在封装体底部,且该发光二极管晶粒的两个电极从封装体的底部暴露出来;
一个不透光的绝缘层,该绝缘层覆盖封装体底部,且该绝缘层在对应发光二极管晶粒的两个电极处镂空而形成暴露出各发光二极管晶粒两个电极的两个凹陷部;以及
两个引脚,该两个引脚分别设置在两个凹陷部中的一者内,并且每个引脚自绝缘层的凹陷部向远离封装体的方向延伸并局部覆盖所述绝缘层远离封装体的表面。
2.一种发光二极管封装方法,包括以下步骤:
第一步,提供一薄膜层并将多个发光二极管晶粒设置在薄膜层上,各发光二极管晶粒的两个电极均贴设在薄膜层上;
第二步,利用封装材料覆盖设置在薄膜层上的所述多个发光二极管晶粒,固化封装材料以形成底部嵌设有多个发光二极管晶粒、且底部被薄膜层覆盖的封装体;
第三步,移除薄膜层以露出嵌设有多个发光二极管晶粒的封装体底部以及各发光二极管晶粒的两个电极;
第四步,在封装体底部覆盖一层不透光的绝缘层,该绝缘层在对应各发光二极管晶粒的两个电极处镂空而形成暴露出各发光二极管晶粒两个电极的凹陷部;以及
第五步,在绝缘层的各个凹陷部内镀金属以形成与各发光二极管晶粒电极电连接的引脚,各个引脚自绝缘层的凹陷部向远离封装体的方向延伸并局部覆盖所述绝缘层远离封装体的表面。
3.如权利要求2所述的发光二极管封装方法,其特征在于,所述第一步将多个发光二极管晶粒通过覆晶方式设置在薄膜层上。
4.如权利要求2所述的发光二极管封装方法,其特征在于,所述第二步通过模造的方式使封装材料覆盖所述薄膜层设有发光二极管晶粒的表面上。
5.如权利要求2所述的发光二极管封装方法,其特征在于,所述第五步向绝缘层的各个凹陷部内电镀金属以形成与各发光二极管晶粒电极电连接的引脚。
6.如权利要求2所述的发光二极管封装方法,其特征在于,所述第五步向绝缘层的各个凹陷部内喷镀金属以形成与各发光二极管晶粒电极电连接的引脚。
7.如权利要求2所述的发光二极管封装方法,其特征在于,还包括第六步:切割所述封装体以及绝缘层以形成多个封装结构,每个封装结构包含一个发光二极管晶粒及两个引脚。
8.如权利要求2至7任意一项所述的发光二极管封装方法,其特征在于,所述薄膜为UV薄膜。
9.如权利要求8所述的发光二极管封装方法,其特征在于,所述第三步先采用UV光照射UV薄膜以降低UV薄膜的粘度、然后移除UV薄膜。
10.如权利要求2所述的发光二极管封装方法,其特征在于,所述绝缘层的材质为环氧成型模料或片状模塑料。
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