CN103367377B - 固态成像装置和电子设备 - Google Patents

固态成像装置和电子设备 Download PDF

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Publication number
CN103367377B
CN103367377B CN201310104772.5A CN201310104772A CN103367377B CN 103367377 B CN103367377 B CN 103367377B CN 201310104772 A CN201310104772 A CN 201310104772A CN 103367377 B CN103367377 B CN 103367377B
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China
Prior art keywords
wiring
pixel
distribution
imaging device
state imaging
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CN201310104772.5A
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English (en)
Chinese (zh)
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CN103367377A (zh
Inventor
小林实希子
山下和芳
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201611254173.1A priority Critical patent/CN106935604B/zh
Priority to CN201611254577.0A priority patent/CN106847848B/zh
Publication of CN103367377A publication Critical patent/CN103367377A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201310104772.5A 2012-04-04 2013-03-28 固态成像装置和电子设备 Active CN103367377B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201611254173.1A CN106935604B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
CN201611254577.0A CN106847848B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-085666 2012-04-04
JPJP2012-085666 2012-04-04
JP2012085666A JP5994344B2 (ja) 2012-04-04 2012-04-04 固体撮像装置、電子機器

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201611254173.1A Division CN106935604B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
CN201611254577.0A Division CN106847848B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备

Publications (2)

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CN103367377A CN103367377A (zh) 2013-10-23
CN103367377B true CN103367377B (zh) 2017-12-01

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CN201611254173.1A Active CN106935604B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备
CN201611254577.0A Active CN106847848B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备

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CN201611254577.0A Active CN106847848B (zh) 2012-04-04 2013-03-28 固态成像装置和电子设备

Country Status (3)

Country Link
US (7) US9184208B2 (enExample)
JP (1) JP5994344B2 (enExample)
CN (3) CN103367377B (enExample)

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JP5745369B2 (ja) 2010-09-06 2015-07-08 株式会社半導体エネルギー研究所 電子機器
JP5994344B2 (ja) * 2012-04-04 2016-09-21 ソニー株式会社 固体撮像装置、電子機器
JP2015012303A (ja) * 2013-06-26 2015-01-19 ソニー株式会社 固体撮像装置および電子機器
JP6180882B2 (ja) * 2013-10-31 2017-08-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、信号処理装置、および電子機器
JP2015198315A (ja) * 2014-04-01 2015-11-09 キヤノン株式会社 固体撮像装置及び撮像システム
JP2016111425A (ja) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 撮像装置
JP6758952B2 (ja) * 2016-06-28 2020-09-23 キヤノン株式会社 撮像装置および撮像システム
JP6813971B2 (ja) * 2016-07-07 2021-01-13 キヤノン株式会社 光電変換装置及び撮像システム
JP6929267B2 (ja) * 2018-12-26 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
KR102710378B1 (ko) 2019-07-25 2024-09-26 삼성전자주식회사 자동 초점 이미지 센서의 픽셀 어레이 및 이를 포함하는 자동 초점 이미지 센서
CN114616672B (zh) * 2019-11-20 2026-06-19 索尼半导体解决方案公司 固态成像器件和电子装置
JP7156330B2 (ja) * 2020-04-29 2022-10-19 株式会社ニコン 撮像素子及び撮像装置
WO2023131997A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US20260050066A1 (en) * 2022-08-24 2026-02-19 Sony Semiconductor Solutions Corporation Imaging element and distance measuring device
JP2025155161A (ja) 2024-04-01 2025-10-14 オムニヴィジョン テクノロジーズ インコーポレイテッド イメージセンサ及びイメージセンサの製造方法

Citations (1)

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JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP2004104203A (ja) 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
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JP2008192648A (ja) * 2007-01-31 2008-08-21 Sanyo Electric Co Ltd 撮像装置
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JP2010212288A (ja) * 2009-03-06 2010-09-24 Renesas Electronics Corp 撮像装置
JP2010273095A (ja) * 2009-05-21 2010-12-02 Renesas Electronics Corp 撮像装置
JP5025703B2 (ja) * 2009-09-25 2012-09-12 株式会社東芝 不揮発性半導体記憶装置
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP5745369B2 (ja) * 2010-09-06 2015-07-08 株式会社半導体エネルギー研究所 電子機器
JP5623259B2 (ja) * 2010-12-08 2014-11-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
KR101736321B1 (ko) * 2010-12-22 2017-05-17 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이 기판 및 엑스레이 검출기
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Also Published As

Publication number Publication date
CN103367377A (zh) 2013-10-23
US10084002B2 (en) 2018-09-25
US9929193B2 (en) 2018-03-27
US20160172409A1 (en) 2016-06-16
US9184208B2 (en) 2015-11-10
CN106935604A (zh) 2017-07-07
US20180166480A1 (en) 2018-06-14
US20150357362A1 (en) 2015-12-10
US9356057B2 (en) 2016-05-31
US20130264468A1 (en) 2013-10-10
JP5994344B2 (ja) 2016-09-21
CN106935604B (zh) 2019-04-26
JP2013219082A (ja) 2013-10-24
CN106847848B (zh) 2020-10-02
US9530815B2 (en) 2016-12-27
US9419042B2 (en) 2016-08-16
CN106847848A (zh) 2017-06-13
US20160307955A1 (en) 2016-10-20
US20180366503A1 (en) 2018-12-20
US10490581B2 (en) 2019-11-26
US20170062502A1 (en) 2017-03-02

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