CN103367206B - 用于等离子体均匀性调谐的多射频阻抗控制 - Google Patents

用于等离子体均匀性调谐的多射频阻抗控制 Download PDF

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Publication number
CN103367206B
CN103367206B CN201310105829.3A CN201310105829A CN103367206B CN 103367206 B CN103367206 B CN 103367206B CN 201310105829 A CN201310105829 A CN 201310105829A CN 103367206 B CN103367206 B CN 103367206B
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frequency
radio
frequency power
top electrode
coupled
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CN103367206A (zh
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阿列克谢·马拉什塔内夫
拉金德尔·丁德萨
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Filters And Equalizers (AREA)
CN201310105829.3A 2012-03-28 2013-03-28 用于等离子体均匀性调谐的多射频阻抗控制 Active CN103367206B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/433,004 US9881772B2 (en) 2012-03-28 2012-03-28 Multi-radiofrequency impedance control for plasma uniformity tuning
US13/433,004 2012-03-28

Publications (2)

Publication Number Publication Date
CN103367206A CN103367206A (zh) 2013-10-23
CN103367206B true CN103367206B (zh) 2017-07-18

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CN201310105829.3A Active CN103367206B (zh) 2012-03-28 2013-03-28 用于等离子体均匀性调谐的多射频阻抗控制

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Country Link
US (2) US9881772B2 (enExample)
JP (2) JP2013225672A (enExample)
KR (1) KR102153141B1 (enExample)
CN (1) CN103367206B (enExample)
SG (2) SG10201507984VA (enExample)
TW (2) TWI589192B (enExample)

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Also Published As

Publication number Publication date
SG10201507984VA (en) 2015-10-29
TW201349946A (zh) 2013-12-01
KR102153141B1 (ko) 2020-09-07
TWI538571B (zh) 2016-06-11
CN103367206A (zh) 2013-10-23
JP2013225672A (ja) 2013-10-31
JP2018164093A (ja) 2018-10-18
US20130260567A1 (en) 2013-10-03
US9881772B2 (en) 2018-01-30
US10593516B2 (en) 2020-03-17
JP6623256B2 (ja) 2019-12-18
SG193760A1 (en) 2013-10-30
US20180166256A1 (en) 2018-06-14
TW201622492A (zh) 2016-06-16
KR20130110104A (ko) 2013-10-08
TWI589192B (zh) 2017-06-21

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