CN103367206B - 用于等离子体均匀性调谐的多射频阻抗控制 - Google Patents
用于等离子体均匀性调谐的多射频阻抗控制 Download PDFInfo
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- CN103367206B CN103367206B CN201310105829.3A CN201310105829A CN103367206B CN 103367206 B CN103367206 B CN 103367206B CN 201310105829 A CN201310105829 A CN 201310105829A CN 103367206 B CN103367206 B CN 103367206B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/433,004 US9881772B2 (en) | 2012-03-28 | 2012-03-28 | Multi-radiofrequency impedance control for plasma uniformity tuning |
| US13/433,004 | 2012-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367206A CN103367206A (zh) | 2013-10-23 |
| CN103367206B true CN103367206B (zh) | 2017-07-18 |
Family
ID=49235589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310105829.3A Active CN103367206B (zh) | 2012-03-28 | 2013-03-28 | 用于等离子体均匀性调谐的多射频阻抗控制 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9881772B2 (enExample) |
| JP (2) | JP2013225672A (enExample) |
| KR (1) | KR102153141B1 (enExample) |
| CN (1) | CN103367206B (enExample) |
| SG (2) | SG10201507984VA (enExample) |
| TW (2) | TWI538571B (enExample) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
| US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极系统 |
| WO2013078434A1 (en) | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Plasma processing chamber with flexible symmetric rf return strap |
| CN108922844A (zh) * | 2013-11-06 | 2018-11-30 | 应用材料公司 | 通过dc偏压调制的颗粒产生抑制器 |
| US10892140B2 (en) | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2015162266A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US10047438B2 (en) * | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
| US10410889B2 (en) | 2014-07-25 | 2019-09-10 | Applied Materials, Inc. | Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors |
| US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
| US9761414B2 (en) * | 2015-10-08 | 2017-09-12 | Lam Research Corporation | Uniformity control circuit for use within an impedance matching circuit |
| SG11201808023TA (en) | 2016-03-23 | 2018-10-30 | Beijing Naura Microelectronics Equipment Co Ltd | Impedance matching system, impedance matching method and semiconductor processing apparatus |
| KR102793197B1 (ko) * | 2016-04-13 | 2025-04-07 | 램 리써치 코포레이션 | Rf 생성기의 복수의 상태들 동안 단계적 방식으로 임피던스 매칭 네트워크를 튜닝하기 위한 시스템들 및 방법들 |
| US10229816B2 (en) * | 2016-05-24 | 2019-03-12 | Mks Instruments, Inc. | Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network |
| US11004660B2 (en) * | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
| US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
| US10424467B2 (en) | 2017-03-13 | 2019-09-24 | Applied Materials, Inc. | Smart RF pulsing tuning using variable frequency generators |
| US10546724B2 (en) * | 2017-05-10 | 2020-01-28 | Mks Instruments, Inc. | Pulsed, bidirectional radio frequency source/load |
| KR102475069B1 (ko) * | 2017-06-30 | 2022-12-06 | 삼성전자주식회사 | 반도체 제조 장치, 이의 동작 방법 |
| WO2019035223A1 (ja) | 2017-08-14 | 2019-02-21 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | プラズマ生成装置、基板処理装置および半導体装置の製造方法 |
| US10002746B1 (en) * | 2017-09-13 | 2018-06-19 | Lam Research Corporation | Multi regime plasma wafer processing to increase directionality of ions |
| US10342114B2 (en) * | 2017-09-15 | 2019-07-02 | Axcelis Technologies, Inc. | RF resonator for ion beam acceleration |
| US11551909B2 (en) | 2017-10-02 | 2023-01-10 | Tokyo Electron Limited | Ultra-localized and plasma uniformity control in a plasma processing system |
| US20190108976A1 (en) * | 2017-10-11 | 2019-04-11 | Advanced Energy Industries, Inc. | Matched source impedance driving system and method of operating the same |
| US10264663B1 (en) * | 2017-10-18 | 2019-04-16 | Lam Research Corporation | Matchless plasma source for semiconductor wafer fabrication |
| KR102763462B1 (ko) | 2018-02-23 | 2025-02-04 | 램 리써치 코포레이션 | 고 전력 회로로부터 연결해제 없이 커패시턴스 측정 |
| CN110323117B (zh) * | 2018-03-28 | 2024-06-21 | 三星电子株式会社 | 等离子体处理设备 |
| KR102376127B1 (ko) * | 2018-05-30 | 2022-03-18 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
| KR102487930B1 (ko) | 2018-07-23 | 2023-01-12 | 삼성전자주식회사 | 기판 지지 장치 및 이를 포함하는 플라즈마 처리 장치 |
| US11222767B2 (en) | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
| US11810761B2 (en) | 2018-07-27 | 2023-11-07 | Eagle Harbor Technologies, Inc. | Nanosecond pulser ADC system |
| US11532457B2 (en) | 2018-07-27 | 2022-12-20 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
| KR102499709B1 (ko) | 2018-08-10 | 2023-02-16 | 이글 하버 테크놀로지스, 인코포레이티드 | RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어 |
| US12456604B2 (en) | 2019-12-24 | 2025-10-28 | Eagle Harbor Technologies, Inc. | Nanosecond pulser RF isolation for plasma systems |
| WO2021134000A1 (en) | 2019-12-24 | 2021-07-01 | Eagle Harbor Technologies, Inc. | Nanosecond pulser rf isolation for plasma systems |
| US11282679B2 (en) * | 2019-05-22 | 2022-03-22 | Samsung Electronics Co., Ltd. | Plasma control apparatus and plasma processing system including the same |
| US11158488B2 (en) | 2019-06-26 | 2021-10-26 | Mks Instruments, Inc. | High speed synchronization of plasma source/bias power delivery |
| TWI887254B (zh) * | 2019-07-17 | 2025-06-21 | 美商得昇科技股份有限公司 | 利用可調式電漿電位的可變模式電漿室 |
| US11043362B2 (en) * | 2019-09-17 | 2021-06-22 | Tokyo Electron Limited | Plasma processing apparatuses including multiple electron sources |
| JP6873588B1 (ja) | 2019-11-12 | 2021-05-19 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| TWI778449B (zh) | 2019-11-15 | 2022-09-21 | 美商鷹港科技股份有限公司 | 高電壓脈衝電路 |
| CN113179676B (zh) | 2019-11-27 | 2024-04-09 | 东芝三菱电机产业系统株式会社 | 活性气体生成装置 |
| JP7736446B2 (ja) * | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| US11967484B2 (en) | 2020-07-09 | 2024-04-23 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| US11538663B2 (en) | 2021-02-23 | 2022-12-27 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US11749505B2 (en) | 2021-02-23 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| JP7560214B2 (ja) * | 2021-03-11 | 2024-10-02 | 東京エレクトロン株式会社 | 着火方法及びプラズマ処理装置 |
| KR20230042824A (ko) | 2021-09-23 | 2023-03-30 | 삼성전자주식회사 | 플라즈마 제어 장치 및 플라즈마 처리 시스템 |
| CN114792619A (zh) * | 2022-05-07 | 2022-07-26 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室 |
| US11824542B1 (en) | 2022-06-29 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Bipolar high voltage pulser |
| KR20250084155A (ko) | 2022-09-29 | 2025-06-10 | 이글 하버 테크놀로지스, 인코포레이티드 | 고전압 플라즈마 제어 |
| KR102854932B1 (ko) | 2023-07-03 | 2025-09-05 | 코스맥스 주식회사 | 비피도박테리움 애니멀리스 서브스페시스 락티스 균주 및 그의 모발 또는 두피 상태 개선 용도 |
| US20250210304A1 (en) * | 2023-12-20 | 2025-06-26 | Applied Materials, Inc. | Electrode and Coil Configurations For Processing Chambers and Related Chamber Kits, Apparatus, and Methods For Semiconductor Manufacturing |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| WO1999026277A1 (en) * | 1997-11-17 | 1999-05-27 | Mattson Technology, Inc. | Systems and methods for plasma enhanced processing of semiconductor wafers |
| JP4456694B2 (ja) * | 1999-06-22 | 2010-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2001144077A (ja) | 1999-11-15 | 2001-05-25 | Applied Materials Inc | プラズマ処理装置及び方法 |
| US6770166B1 (en) * | 2001-06-29 | 2004-08-03 | Lam Research Corp. | Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor |
| US6706138B2 (en) * | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
| US6920729B2 (en) * | 2002-07-03 | 2005-07-26 | Peter J. Konopka | Composite wall tie |
| JP4370789B2 (ja) | 2002-07-12 | 2009-11-25 | 東京エレクトロン株式会社 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
| CN101160014B (zh) * | 2002-07-12 | 2011-12-28 | 东京毅力科创株式会社 | 等离子体处理装置和可变阻抗装置的校正方法 |
| US7144521B2 (en) | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
| US7405521B2 (en) | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7169256B2 (en) | 2004-05-28 | 2007-01-30 | Lam Research Corporation | Plasma processor with electrode responsive to multiple RF frequencies |
| JP5254533B2 (ja) | 2006-03-31 | 2013-08-07 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
| US7611603B2 (en) | 2006-03-31 | 2009-11-03 | Tokyo Electron Limited | Plasma processing apparatus having impedance varying electrodes |
| US7264688B1 (en) * | 2006-04-24 | 2007-09-04 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
| US7837826B2 (en) * | 2006-07-18 | 2010-11-23 | Lam Research Corporation | Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof |
| JP5199595B2 (ja) * | 2007-03-27 | 2013-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのクリーニング方法 |
| US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| CN101478857A (zh) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理装置 |
| US20090230089A1 (en) * | 2008-03-13 | 2009-09-17 | Kallol Bera | Electrical control of plasma uniformity using external circuit |
| JP2010238730A (ja) | 2009-03-30 | 2010-10-21 | Tokyo Electron Ltd | プラズマ処理装置 |
| US8652298B2 (en) * | 2011-11-21 | 2014-02-18 | Lam Research Corporation | Triode reactor design with multiple radiofrequency powers |
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2012
- 2012-03-28 US US13/433,004 patent/US9881772B2/en active Active
-
2013
- 2013-03-26 SG SG10201507984VA patent/SG10201507984VA/en unknown
- 2013-03-26 SG SG2013023007A patent/SG193760A1/en unknown
- 2013-03-27 KR KR1020130033059A patent/KR102153141B1/ko active Active
- 2013-03-27 JP JP2013066480A patent/JP2013225672A/ja active Pending
- 2013-03-28 TW TW102111232A patent/TWI538571B/zh active
- 2013-03-28 TW TW105109133A patent/TWI589192B/zh active
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| US9881772B2 (en) | 2018-01-30 |
| US20130260567A1 (en) | 2013-10-03 |
| US20180166256A1 (en) | 2018-06-14 |
| JP6623256B2 (ja) | 2019-12-18 |
| KR20130110104A (ko) | 2013-10-08 |
| CN103367206A (zh) | 2013-10-23 |
| TW201349946A (zh) | 2013-12-01 |
| SG193760A1 (en) | 2013-10-30 |
| TW201622492A (zh) | 2016-06-16 |
| KR102153141B1 (ko) | 2020-09-07 |
| TWI538571B (zh) | 2016-06-11 |
| US10593516B2 (en) | 2020-03-17 |
| SG10201507984VA (en) | 2015-10-29 |
| JP2013225672A (ja) | 2013-10-31 |
| TWI589192B (zh) | 2017-06-21 |
| JP2018164093A (ja) | 2018-10-18 |
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