CN103358032A - Wafer level scribing method for CIS (Cmos image sensor) product - Google Patents
Wafer level scribing method for CIS (Cmos image sensor) product Download PDFInfo
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Abstract
The invention relates to a wafer level scribing method for a CIS (Cmos image sensor) product, and belongs to the technical field of semiconductor packaging. The wafer level scribing method for the CIS product comprises the following processes: attaching a wafer (100) of the CIS product to a scribing film (400); cutting a structure except a glass layer (110) by a blade (200), and cutting the glass layer (110) by a laser (300); and performing splitting, film expansion and picking on the wafer (100) to form an independent single CIS product. The wafer level scribing method for the CIS product, provided by the invention, is high in scribing speed, good in scribing quality and low in production cost, and can be applied to a complicated product structure.
Description
Technical field
The present invention relates to a kind of wafer level dicing method of CIS product, belong to the semiconductor packaging field.
Background technology
Wafer level imageing sensor CIS(Cmos image sensor
)Product is than the product of conventional wire bonding packaging, has that package dimension is little, a photosensitive area advantage such as vulnerable to pollution not when low price and downstream assembling, receiving increasing concern.The basic structure of imageing sensor is the combining structure that glass and silicon form after by the glue bonding, and wherein, the thickness of the glassy layer of CIS product is about 400 microns, and the thickness of silicon base layer is about 100 microns.The level of the combining structure of this CIS product is many, the mechanical characteristic of material and physical characteristic differ larger, generally all uses in the industry traditional mechanical type rotating skive blade saturating method of imposing uniformity without examining individual cases.There are the following problems for this kind method:
1, because the CIS product size is little, thicker again, for satisfying the scribe line split requirement, blade requires thinner, so cutting speed is very slow, and generally at 2 ~ 8mm/s, super only 10mm/s;
2, blade cuts sheet glass, because the nature of glass is crisp, the cut edge of sheet glass easily collapses the limit, affects product quality;
3, the material character owing to sheet glass, silicon chip and glue-line differs greatly, blade should act on sheet glass and act on again silicon chip, so that blade life is short, a blade generally can only cut about 100m, roughly cut disk 2 ~ 4pcs of 8inch, for guaranteeing output, many scribing equipments need be set in actual volume production and need the frequent blade, the consumptive material consumption is large, causes production cost higher;
4, to the CIS product of silicon-glass-silicon sandwich construction, utilize traditional processing technology, produce required consumptive material, such as diaphragm, blade, consumption is wanted double increase, and along with the increase of product structure complexity, product yield drops thereupon simultaneously.
Summary of the invention
Shown in holding, the object of the invention is to overcome the deficiency of above-mentioned dicing method, provide that a kind of scribing for the CIS product is fast, the scribing quality is good, production cost is lower, can be applicable to the wafer level dicing method of Complex Product Structure.
The object of the present invention is achieved like this:
A kind of wafer level dicing method of CIS product comprises following technical process:
Disk and the scribing film of CIS product are fitted;
Structure outside the blade cuts glassy layer, the cutting glass by laser layer;
Disk passes through sliver, expands film, picks, and forms independently single CIS product,
Be provided with scribe line area between adjacent single the CIS product of the disk of described CIS product; described scribe line area comprises scribe line I and scribe line II; described scribe line I and scribe line II are arranged at respectively upper and lower surface and the consistency from top to bottom of disk; the scribe line area of the disk of described CIS product comprises glassy layer and silicon base layer; described glassy layer and silicon base layer are by the glue-line bonding; the surface of described silicon base layer arranges soldered ball layer and protective layer, and described protective layer is filled the gap of adjacent solder balls.
Described wafer level dicing method comprises following technical process:
Step 1, the glassy layer of the disk of CIS product is placed on the film sticking equipment down, the scribing film on glassy layer and the disk ring is fitted;
Step 2, above-mentioned disk is placed scribing equipment, after levelling, the contraposition, the program of advancing of setting according to blade is with scribe line I cutting silicon base layer and the glue-line of blade along disk;
Step 3, utilize UV illumination to make the scribing film of the glassy layer that step 1 finishes peel off the glassy layer of above-mentioned disk, disk is spun upside down 180 ° again, pad pasting makes glassy layer up again, the soldered ball layer down with the disk ring on the scribing film fit;
Step 4, above-mentioned disk is moved to laser equipment, after levelling, the contraposition, along the stealthy cutting technique of scribe line II with laser glassy layer is cut;
Step 5, above-mentioned disk is moved to breaking device carry out sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from the scribing film, pick one by one independently single CIS product in order to follow-up.
Further, in the step 4, in the direction of the scribe line I of described disk backlight is set, described backlight is source of parallel light.
Described wafer level dicing method comprises following technical process:
Step 1, with the glassy layer of the disk of CIS product up, the soldered ball layer places on the film sticking equipment down, the scribing film on soldered ball layer and the disk ring is fitted;
Step 2, above-mentioned disk is placed laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser is with the stealthy cutting technique of the laser scribe line II glass-cutting layer along disk;
Step 3, utilize UV illumination to make scribing film on the soldered ball layer that step 1 finishes peel off the soldered ball layer of above-mentioned disk, more above-mentioned disk is spun upside down 180 °, pad pasting makes the soldered ball layer up again, glassy layer down with the disk ring on the scribing film fit;
Step 4, above-mentioned disk is moved to scribing equipment, after levelling, the contraposition, with scribe line I cutting silicon base layer and the glue-line of blade along disk;
Step 5, with breaking device with above-mentioned disk sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from the scribing film, pick one by one independently single CIS product in order to follow-up.
Further, described scribing film is the UV film.
Described wafer level dicing method comprises following technical process:
Step 1, with the soldered ball layer of the disk of CIS product up, glassy layer places on the film sticking equipment down, the scribing film on glassy layer and the disk ring is fitted;
Step 2, above-mentioned disk is placed laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser sees through scribing film glass-cutting layer with the stealthy cutting technique of laser along the scribe line II of disk;
Step 3, above-mentioned disk is moved to scribing equipment, after levelling, the contraposition, with scribe line I cutting silicon base layer and the glue-line of blade along disk;
Step 4, with breaking device with above-mentioned disk sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from the scribing film, pick one by one independently single CIS product in order to follow-up.
Described wafer level dicing method comprises following technical process:
Step 1, with the soldered ball layer of the disk of CIS product up, glassy layer places on the film sticking equipment down, the scribing film on glassy layer and the disk ring is fitted;
Step 2, above-mentioned disk is placed scribing equipment, after levelling, the contraposition, with scribe line I cutting silicon base layer and the glue-line of blade along disk;
Step 3, above-mentioned disk is moved to laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser sees through scribing film glass-cutting layer with the stealthy cutting technique of laser along the scribe line II of disk;
Step 4, with breaking device with above-mentioned disk sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from the scribing film, pick one by one independently single CIS product in order to follow-up.
Further, described scribing film is for seeing through the UV film of laser beam more than 80%.
Further, the lower cutter degree of depth of described blade is not less than the gross thickness of silicon base layer and glue-line.
Further, described silicon base layer laser cutting.
The stealthy cutting technique of described laser be with laser focusing in inside glass, form thin and long metamorphic layer at inside glass, the glass surface not damaged only has the stretching by sliver, expansion glued membrane (such as the scribing film), glass could be divided into little unit.The equipment that described laser adopts is the infrared laser of optical maser wavelength 1064nm, and average output power is 150W, and the cutting speed scope is 50～500mm/s.Glass after the stealthy cutting almost little without burr, fuel factor, without layering, the characteristics such as cutting effect is accurate, smooth, sidewall.
The invention has the beneficial effects as follows:
1, the relatively thick glassy layer of technology cutting material of the stealthy glass-cutting of the non-contacting laser of employing of the present invention and glass, be difficult for fragment, and the cut edge is neat, is difficult for collapsing the limit, and the thinner silicon base layer of blade cuts and the glue-line of laser cutting poor effect, the two in conjunction with processing method, with respect to traditional mechanical type rotating skive blade front cutting technique, promoted cut quality, improved cutting speed, reduce production cost, improved production efficiency.
2, the embodiment of the invention one is used first blade cuts silicon base layer and glue-line, with the cutting glass by laser layer time, arranges backlightly in the silicon base layer direction, is conducive to the cutting route of the quick aligned blades of laser.
3, the embodiment of the invention two first cutting glass by laser layers are used blade cuts silicon base layer and glue-line again, if during turn over film once, whole technical process is succinct, and more economizes the consumptive materials such as membrane material, blade, has reduced production cost.
4, the embodiment of the invention three, embodiment four use special scribing film, and laser sees through the scribing film and does stealthy cutting, blade cuts silicon base layer and glue-line, flow process is simplified more, only needed a pad pasting in the whole process, do not need to turn over film, further reduce production cost, improved production efficiency.
5, the present invention also is applicable to the scribing of the sandwich construction of silicon-glass-silicon, compare with traditional mechanical type rotating skive blade front cutting technique, can promote cut quality, improve scribing efficient, reduce pad pasting, turn over the number of times of film, save consumptive material, reduce production costs, be conducive to the lifting of product yield.
Description of drawings
Fig. 1 is the schematic diagram of flow process of the wafer level dicing method of a kind of CIS product of the present invention.
Fig. 2 is the schematic diagram of scribe line area structure of the wafer level dicing method of a kind of CIS product of the present invention.
Fig. 3 to Fig. 8 is the schematic diagram that the embodiment one of the wafer level dicing method of a kind of CIS product of the present invention amplifies.
Fig. 9 to Figure 14 is the schematic diagram that the embodiment two of the wafer level dicing method of a kind of CIS product of the present invention amplifies.
Figure 15 to Figure 19 is the schematic diagram that the embodiment three of the wafer level dicing method of a kind of CIS product of the present invention amplifies.
Figure 20 to Figure 24 is the schematic diagram that the embodiment four of the wafer level dicing method of a kind of CIS product of the present invention amplifies.
Wherein:
Scribe line I 101
Scribe line II 102
Glue-line 120
The specific embodiment
Referring to Fig. 1, the wafer level dicing method of a kind of CIS product of the present invention comprises following processing step:
S101: disk 100 and the scribing film 400 of CIS product are fitted;
S102: the structure outside the blade 200 glass-cutting layers 110, laser 300 glass-cutting layers 110;
S103: disk 100 passes through slivers, expands film, picks, and forms independently single CIS product.
The wafer level dicing method of a kind of CIS product of the present invention; be provided with scribe line area between adjacent single the CIS product of the disk 100 of described CIS product; as shown in Figure 2; described scribe line area comprises scribe line I 101 and scribe line II 102; described scribe line I 101 and scribe line II 102 are arranged at respectively upper and lower surface and the consistency from top to bottom of disk 100; the scribe line area of the disk 100 of described CIS product comprises glassy layer 110 and silicon base layer 130; described glassy layer 110 and silicon base layer 130 are by glue-line 120 bondings; the surface of described silicon base layer 130 arranges soldered ball layer 150 and protective layer 140, and described protective layer 140 is filled the gap of adjacent solder balls.
Embodiment one, and the wafer level dicing method of a kind of CIS product of the present invention is referring to Fig. 3 to Fig. 8.
The wafer level dicing method of a kind of CIS product of the present invention comprises following technical process:
Step 1, the glassy layer 110 of the disk 100 of CIS product is placed on the film sticking equipment down, glassy layer 110 is fitted with the scribing film 400 on the disk ring 500.Disk ring 500 is used for fixing scribing film 400, and described scribing film 400 is the UV film, and the stickiness of UV film is very large, can be used for clinging disk 100, but its increase stickiness with UV light irradiation time lengthening and exposure intensity can reduce, so that the peeling off of follow-up disk 100; As shown in Figure 3 and Figure 4.
Step 2, above-mentioned disk 100 is placed scribing equipment, after levelling, the contraposition, the program of advancing of setting according to blade 200 is with scribe line I 101 cutting silicon base layer 130 and the glue-lines 120 of blade 200 along disk 100.Described blade 200 is common skive blade, and the speed of its cutting silicon base layer can reach 20～40mm/s, and the lower cutter degree of depth of blade 200 is not less than the gross thickness of silicon base layer 130 and glue-line 120; As shown in Figure 5.
Step 3, utilize UV illumination to make the scribing film 400 of the glassy layer 110 that step 1 finishes peel off the glassy layer 110 of above-mentioned disk 100, again disk 100 is spun upside down 180 °, again paste the UV film, make glassy layer 110 up, soldered ball layer 150 down with disk ring 500 on scribing film 400 fit; As shown in Figure 6.
Step 4, above-mentioned disk 100 is moved to laser 300 equipment, after levelling, the contraposition, along the stealthy cutting technique of scribe line II 102 usefulness laser 300 to glassy layer 110 cuttings; As shown in Figure 7.The Feed Speed (feed speed) of described laser 300 is 300～500 mm/s.For laser is further alignd with the blade cuts route, can backlight be set in the direction of the scribe line I 101 of blade 200, preferred backlight is source of parallel light.
Step 5, above-mentioned disk 100 is moved to breaking device, with disk 100 slivers, and finish the expansion film with breaking device, increase the spacing of adjacent C IS product, from scribing film 400, pick one by one independently single CIS product in order to follow-up.As shown in Figure 8.
Embodiment two, and the wafer level dicing method of a kind of CIS product of the present invention is referring to Fig. 9 to Figure 14.
The wafer level dicing method of a kind of CIS product of the present invention comprises following technical process:
Step 1, with the glassy layer 110 of the disk 100 of CIS product up, soldered ball layer 150 places on the film sticking equipment down, soldered ball layer 150 is fitted with the UV scribing film 400 on the disk ring 500; As shown in Figure 9 and Figure 10.
Step 2, above-mentioned disk 100 is placed laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser 300 is with 102 pairs of glassy layers of scribe line II, 110 cuttings along disk 100 of the stealthy cutting technique of laser 300; As shown in figure 11.
Step 3, utilize UV illumination to make scribing film 400 on the soldered ball layer 150 that step 1 finishes peel off the soldered ball layer 150 of above-mentioned disk 100, again above-mentioned disk 100 is spun upside down 180 °, again paste the UV film, make soldered ball layer 150 up, glassy layer 110 down with disk ring 500 on scribing film 400 fit; As shown in figure 12.
Step 4, above-mentioned disk 100 is moved to scribing equipment, after levelling, the contraposition, with scribe line I 101 cutting silicon base layer 130 and the glue-lines 120 of blade 200 along disk 100, the lower cutter degree of depth of blade 200 is not less than the gross thickness of silicon base layer 130 and glue-line 120; As shown in figure 13.
Step 5, with breaking device with above-mentioned disk 100 slivers, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film 400, pick one by one independently single CIS product in order to follow-up.As shown in figure 14.
The embodiment of the invention two first glass-cutting layers cut silicon base layer again, if during turn over film once, whole technical process is succinct, and more economizes the consumptive materials such as membrane material, has reduced production cost.
Embodiment three, and the wafer level dicing method of a kind of CIS product of the present invention is referring to Figure 15 to Figure 19.
The wafer level dicing method of a kind of CIS product of the present invention comprises following technical process:
Step 1, with the soldered ball layer 150 of the disk 100 of CIS product up, glassy layer 110 places on the film sticking equipment down, glassy layer 110 is fitted with the scribing film 400 on the disk ring 500.The model that described scribing film 400 adopts Lintec to produce is the UV film of Adwill D-821HS, 85 microns of its thickness, can load disk 100, take off film by UV illumination, have again the good penetrability of 1064nm laser, wherein 80% above laser beam can see through this UV film, to satisfy laser the glass under the scribing film 400 is carried out the stealth cutting.And 400 pairs of laser beams of common scribing film have the reflectivity more than 90%, have stopped the dissection of laser to scribing film 400 lower-glass; Such as Figure 15 and shown in Figure 16.
Step 2, above-mentioned disk 100 is placed laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser 300 sees through scribing film 400 glass-cutting layers 110 with the stealthy cutting technique of laser 300 along the scribe line II 102 of disk 100; As shown in figure 17.
Step 3, above-mentioned disk 100 is moved to scribing equipment, after levelling, the contraposition, with scribe line I 101 cutting silicon base layer 130 and the glue-lines 120 of blade 200 along disk 100, the speed of blade 200 cutting silicon base layers 130 can arrive 20～40mm/s; As shown in figure 18.
Step 4, with breaking device with above-mentioned disk 100 slivers, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film 400, pick one by one independently single CIS product in order to follow-up.As shown in figure 19.
Embodiment four, and the wafer level dicing method of a kind of CIS product of the present invention is referring to Figure 20 to Figure 24.
Step 1, with the soldered ball layer 150 of the disk 100 of CIS product up, glassy layer 110 places on the film sticking equipment down, glassy layer 110 is fitted with the scribing film 400 on the disk ring 500; Shown in Figure 20 and 21.
Step 2, above-mentioned disk 100 is placed scribing equipment, after levelling, the contraposition, with scribe line I 101 cutting silicon base layer 130 and the glue-lines 120 of blade 200 along disk 100; As shown in figure 22.
Step 3, above-mentioned disk 100 is moved to laser equipment, after levelling, the contraposition, the program of advancing of setting according to laser 300 sees through scribing film 400 glass-cutting layers 110 with the stealthy cutting technique of laser 300 along the scribe line II 102 of disk 100; As shown in figure 23.
Step 4, with breaking device with above-mentioned disk 100 slivers, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film 400, pick one by one independently single CIS product in order to follow-up.As shown in figure 24.
Among embodiment three, the embodiment four, use special scribing film, the technical process that makes whole disk only needs a pad pasting, does not need to turn over film, not only saves consumables cost, and easy to operate, shortened process time, improved production efficiency.
The wafer level dicing method of a kind of CIS product of the present invention also can be used for the disk to the CIS product of the sandwich construction of silicon-glass-silicon, the structures except glassy layer such as the stealthy glass-cutting layer of laser, blade cuts silicon base layer, glue-line, not only can promote cut quality, improve scribing efficient, and can reduce pad pasting, turn over the number of times of film, save consumptive material, reduce production costs, be conducive to the lifting of product yield, with respect to traditional mechanical type rotating skive blade front cutting technique, can make the integral cutting Speed improving 5 to 10 times.
Advantage in view of the invisible laser cutting technique: 1. anhydrous processing procedure; 2. without dust; 3. cutting speed is fast; 4. zero Cutting Road loss; 5. die strength is high after the cutting; 6. contactless cutting; 7. cutting process is without generation of static electricity, and the stealthy cutting technique of the laser of the wafer level dicing method of a kind of CIS product of the present invention also can be used for the cutting of silicon base layer.
It is pointed out that and be familiar with the scope that any change that the person skilled in art does the specific embodiment of the present invention does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to previous embodiment.
Claims (10)
1. the wafer level dicing method of a CIS product comprises following technical process:
The disk (100) of CIS product is fitted with scribing film (400);
Structure outside blade (200) the glass-cutting layer (110), laser (300) glass-cutting layer (110);
Disk (100) passes through sliver, expands film, picks, and forms independently single CIS product,
Be provided with scribe line area between adjacent single the CIS product of the disk of described CIS product (100); described scribe line area comprises scribe line I (101) and scribe line II (102); described scribe line I (101) and scribe line II (102) are arranged at respectively upper and lower surface and the consistency from top to bottom of disk (100); the scribe line area of the disk of described CIS product (100) comprises glassy layer (110) and silicon base layer (130); described glassy layer (110) and silicon base layer (130) are by glue-line (120) bonding; the surface of described silicon base layer (130) arranges soldered ball layer (150) and protective layer (140), and described protective layer (140) is filled the gap of adjacent solder balls.
2. the wafer level dicing method of a kind of CIS product according to claim 1, it is characterized in that: described wafer level dicing method comprises following technical process:
Step 1, the glassy layer (110) of the disk (100) of CIS product is placed on the film sticking equipment down, glassy layer (110) is fitted with the scribing film (400) on the disk ring (500);
Step 2, above-mentioned disk (100) is placed scribing equipment, after levelling, the contraposition, the program of advancing of setting according to blade (200) is with scribe line I (101) cutting silicon base layer (130) and the glue-line (120) of blade (200) along disk (100);
The scribing film (400) of step 3, the glassy layer (110) that utilizes UV illumination to make step 1 to finish is peeled off the glassy layer (110) of above-mentioned disk (100), again disk (100) is spun upside down 180 °, again pad pasting, make glassy layer (110) up, soldered ball layer (150) down with disk ring (500) on scribing film (400) fit;
Step 4, above-mentioned disk (100) is moved to laser (300) equipment, after levelling, the contraposition, along the stealthy cutting technique of scribe line II (102) with laser (300) glassy layer (110) is cut;
Step 5, above-mentioned disk (100) is moved to breaking device carry out sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film (400), pick one by one independently single CIS product in order to follow-up.
3. the wafer level dicing method of a kind of CIS product according to claim 2 is characterized in that: in the step 4, in the direction of the scribe line I (101) of described disk (100) backlight is set, described backlight is source of parallel light.
4. the wafer level dicing method of a kind of CIS product according to claim 1, it is characterized in that: described wafer level dicing method comprises following technical process:
Step 1, with the glassy layer (110) of the disk (100) of CIS product up, soldered ball layer (150) places on the film sticking equipment down, soldered ball layer (150) is fitted with the scribing film (400) on the disk ring (500);
Step 2, above-mentioned disk (100) is placed laser equipment, after levelling, the contraposition, according to the program of advancing that laser (300) is set, use the stealthy cutting technique of laser (300) along the scribe line II (102) of disk (100) glassy layer (110) to be cut;
Step 3, utilize UV illumination to make scribing film (400) on the soldered ball layer (150) that step 1 finishes peel off the soldered ball layer (150) of above-mentioned disk (100), again above-mentioned disk (100) is spun upside down 180 °, again pad pasting, make soldered ball layer (150) up, glassy layer (110) down with disk ring (500) on scribing film (400) fit;
Step 4, above-mentioned disk (100) is moved to scribing equipment, after levelling, the contraposition, with scribe line I (101) cutting silicon base layer (130) and the glue-line (120) of blade (200) along disk (100);
Step 5, with breaking device with above-mentioned disk (100) sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film (400), pick one by one independently single CIS product in order to follow-up.
5. according to claim 1 and 2 or the wafer level dicing method of 4 described a kind of CIS products, it is characterized in that: described scribing film (400) is the UV film.
6. the wafer level dicing method of a kind of CIS product according to claim 1, it is characterized in that: described wafer level dicing method comprises following technical process:
Step 1, with the soldered ball layer (150) of the disk (100) of CIS product up, glassy layer (110) places on the film sticking equipment down, glassy layer (110) is fitted with the scribing film (400) on the disk ring (500);
Step 2, above-mentioned disk (100) is placed laser equipment, after levelling, the contraposition, according to the program of advancing that laser (300) is set, the stealthy cutting technique of usefulness laser (300) sees through scribing film (400) glass-cutting layer (110) along the scribe line II (102) of disk (100);
Step 3, above-mentioned disk (100) is moved to scribing equipment, after levelling, the contraposition, with scribe line I (101) cutting silicon base layer (130) and the glue-line (120) of blade (200) along disk (100), described blade (200) cutting groove is corresponding with laser (300) scribing crackle;
Step 4, with breaking device with above-mentioned disk (100) sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film (400), pick one by one independently single CIS product in order to follow-up.
7. the wafer level dicing method of a kind of CIS product according to claim 1, it is characterized in that: described wafer level dicing method comprises following technical process:
Step 1, with the soldered ball layer (150) of the disk (100) of CIS product up, glassy layer (110) places on the film sticking equipment down, glassy layer (110) is fitted with the scribing film (400) on the disk ring (500);
Step 2, above-mentioned disk (100) is placed scribing equipment, after levelling, the contraposition, with scribe line I (101) cutting silicon base layer (130) and the glue-line (120) of blade (200) along disk (100);
Step 3, above-mentioned disk (100) is moved to laser equipment, after levelling, the contraposition, according to the program of advancing that laser (300) is set, the stealthy cutting technique of usefulness laser (300) sees through scribing film (400) glass-cutting layer (110) along the scribe line II (102) of disk (100);
Step 4, with breaking device with above-mentioned disk (100) sliver, and finish the expansion film, increase the spacing of adjacent C IS product, from scribing film (400), pick one by one independently single CIS product in order to follow-up.
8. it is characterized in that according to claim 6 or the wafer level dicing method of 7 described a kind of CIS products: described scribing film (400) is for seeing through the UV film of laser beam more than 80%.
9. according to claim 1 and 2 or the wafer level dicing method of 4 or 6 or 7 described a kind of CIS products, it is characterized in that: the lower cutter degree of depth of described blade (200) is not less than the gross thickness of silicon base layer (130) and glue-line (120).
10. the wafer level dicing method of a kind of CIS product according to claim 1 is characterized in that: described silicon base layer (130) laser (300) cutting.
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| CN106670735A (en) * | 2016-08-31 | 2017-05-17 | 北京时代民芯科技有限公司 | High-precision welding piece cutting method |
| CN106825941A (en) * | 2016-12-28 | 2017-06-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | A kind of front laser inner-cutting method of Silicon Wafer |
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| CN109909623A (en) * | 2017-12-12 | 2019-06-21 | 中芯国际集成电路制造(北京)有限公司 | Cutting method for wafer |
| CN111192852A (en) * | 2018-11-15 | 2020-05-22 | 株式会社迪思科 | Method for processing laminate |
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| CN106825941B (en) * | 2016-12-28 | 2019-05-10 | 武汉光谷航天三江激光产业技术研究院有限公司 | A kind of front laser inner-cutting method of Silicon Wafer |
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| CN108996470A (en) * | 2018-08-09 | 2018-12-14 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting method |
| CN108971772A (en) * | 2018-08-29 | 2018-12-11 | 杭州千皓科技有限公司 | A kind of sliver technique of laser optics glass-cutting |
| CN111192852A (en) * | 2018-11-15 | 2020-05-22 | 株式会社迪思科 | Method for processing laminate |
| JP2020087973A (en) * | 2018-11-15 | 2020-06-04 | 株式会社ディスコ | Laminate processing method |
| JP7164411B2 (en) | 2018-11-15 | 2022-11-01 | 株式会社ディスコ | Laminate processing method |
| CN111192852B (en) * | 2018-11-15 | 2023-08-01 | 株式会社迪思科 | Method for processing laminated body |
| CN112894165A (en) * | 2021-01-20 | 2021-06-04 | 湖北五方晶体有限公司 | Laser cutting method for glass organic layer composite material |
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