CN104439711B - Laser scribing method reducing chip physical stress damage - Google Patents

Laser scribing method reducing chip physical stress damage Download PDF

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Publication number
CN104439711B
CN104439711B CN201310423337.9A CN201310423337A CN104439711B CN 104439711 B CN104439711 B CN 104439711B CN 201310423337 A CN201310423337 A CN 201310423337A CN 104439711 B CN104439711 B CN 104439711B
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CN
China
Prior art keywords
laser
scribing
scanning
gt
wafer
Prior art date
Application number
CN201310423337.9A
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Chinese (zh)
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CN104439711A (en
Inventor
王光振
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上海华虹集成电路有限责任公司
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Priority to CN201310423337.9A priority Critical patent/CN104439711B/en
Publication of CN104439711A publication Critical patent/CN104439711A/en
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Publication of CN104439711B publication Critical patent/CN104439711B/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

Abstract

The invention discloses a laser scribing method reducing chip physical stress damage. According to the technical scheme, the method includes emitting laser to the back of a wafer, and focusing the front surfaces of wafer scribing channels through primary laser scanning; selecting the laser source energy with the set strength, allowing the covalent bonds between the surface crystals of the wafer scribing channels to break completely to obtain an amorphous layer so as to reduce the transmission capability of mechanical stress; performing multiple times of laser scanning in the same scribing channel, and allowing the scanning laser focusing depth to decrease sequentially; allowing the distances between the scanning laser focusing points to be smaller than or equal to the effective bond breaking area radius of the adopted laser source. By the aid of the method, the damage on Flash products with the scribing channels which are smaller than 20 micrometers by laser scribing can be reduced greatly, and the laser scribing can be applied to the Flash products with the scribing channels which are smaller than 20 micrometers in batches. The method is adaptive to the Flash products with the scribing channels which are smaller than 20 micrometers.

Description

Reduce chip and suffer the laser scribing method that physical stress is damaged

Technical field

The present invention relates to the wafer recessiveness laser scribing field in IC manufacturing, more particularly in dicing lane width Less than the laser scribing method that chip suffers that physical stress is damaged in the laser scribe process method of 20 μm of wafers, can be reduced.

Background technology

Traditional diamant scribing is it is impossible to flash (flash memory) product that dicing lane is less than with 20 μm implements scribing.

Laser scribe process method, led (light emitting diode), rfid (RF identification) field obtained widely apply with Promote;But the flash product scope higher in integrated level, characteristic size is less, cost requirement is lower, because laser scribing is introduced Thermal stress, the micro-damage that brought of physical stress damage flash product, caused yield loss very important it is impossible to Volume production application is obtained on flash product, seriously hinders the application in flash field for the laser scribing and popularization.

Content of the invention

The technical problem to be solved in the present invention is to provide a kind of reduction chip to suffer the laser scribing side that physical stress is damaged Method, can greatly reduce the damage that laser scribing is less than 20 μm of flash product to dicing lane, enable laser scribing in scribing Road is less than on 20 μm of flash product and obtains volume production application.

For solving above-mentioned technical problem, the chip that reduces of the present invention suffers the laser scribing method that physical stress is damaged, is Adopt the following technical scheme that realization: from wafer rear incident laser, laser scanning confocal is in the positive table of dicing lane of wafer first Face;Select the lasing light emitter energy setting intensity so that the covalent bond energy between Wafer Dicing road surface crystal is by sufficient scission of link shape Become unformed layer, to reduce the transmission capacity of mechanical stress;Multiple laser scanning in same dicing lane, scanning laser focuses on Depth is successively from deep to shallow;Spacing setting between scanning laser focus point, considers that sweep speed is launched with lasing light emitter in the horizontal Coordination between frequency is it should be ensured that the effective scission of link area radius being smaller than equal to lasing light emitter used of focus point;

The technological parameter of described laser scribing is: lasing light emitter wavelength X: 1200nm >=λ >=900nm;Laser power p:1.1w ≥p≥0.8w;Laser emission frequency f:100khz >=f >=80khz;Scribing sweep speed v:200mm/s≤v≤300mm/s.

The present invention passes through accurately monocrystalline covalent bond in Wafer Dicing road to be implemented fully scission of link formation unformed layer, greatly The earth reduces the transmission of the physical stress in wafer Slicing procedure between crystal, reduces the shadow to chip for the physical stress in Slicing procedure Ring, the loss percentage reducing chip edge circuit is so that flash product yield is improved.

The present invention passes through theory analysis and verification experimental verification, dicing lane width is less than to 20 μm of flash product, still can be very Carry out well the laser scribing of burst;Make the physical damage that laser scribing is introduced, dicing lane is less than to 20 μm of flash Product substantially reduce it is achieved that laser scribe process method dicing lane be less than 20 μm of flash product scope obtain volume production should With with popularization.

Brief description

The present invention is further detailed explanation with specific embodiment below in conjunction with the accompanying drawings:

Accompanying drawing is to reduce chip to suffer that the laser scribing method of mechanical damage implements schematic diagram.

Specific embodiment

Referring to shown in accompanying drawing, described reduction chip suffers that the laser scribing method that physical stress is damaged is:

By thinning wafer, upward, (7 represent wafer frontside to its wafer rear (6 expression wafer monocrystalline substrate) in front Chip circuit has active layer) down, (8 represent uv to the uv glue (no shadow glue) being covered with by uv tape (ultraviolet irradiation adhesive tape) Tape covered uv glue-line) it is pasted on uv film (antiultraviolet film) [pc (Merlon) film layers of 9 expression uvtape];Wafer rear Towards lasing light emitter, implement scribing from wafer rear incident laser, laser scanning confocal is in the front surface in Wafer Dicing road first.Figure In 1 represent laser scanning confocal point position first in dicing lane, 2,3,4 etc. are illustrated respectively in second in dicing lane, the 3rd The secondary, lengthwise position of the 4th laser scanning confocal point and order.Because effective thickness on wafer for the flash product with respect to For the thickness of wafer itself, can be counted as being only located at crystal column surface, thus during sliver crystal column surface mechanical-physical stress Transmission be flash product is caused damage important sources.

The lasing light emitter energy selecting sufficient intensity is so that the covalent bond between crystal column surface crystal can be by sufficient scission of link shape Become unformed layer, to reduce the transmission capacity of mechanical stress.

Notice that order during multiple laser scanning (represents referring to label in accompanying drawing 1,2,3,4 etc., in dicing lane respectively For the first time, for the second time, for the third time, longitudinal sequence of the 4th laser scanning confocal point and position), that is, in same dicing lane Repeatedly laser scanning, the depth of scanning laser focus point successively from deep to shallow, so can avoid previous laser scanning to damage Hinder layer and have influence on Laser Focusing quality next time, it is to avoid laser light scattering injures chip.

Spacing setting between focus point: consider the association between sweep speed (v) and lasing light emitter tranmitting frequency (f) in the horizontal Adjust it is ensured that the spacing (v/f) of focus point is not more than effective scission of link area radius of lasing light emitter used.

Through laser scribing test and packaging and testing assessment it is adaptable to flash (especially sim flash product) product The technological parameter of laser scribing is:

Lasing light emitter: wavelength X is, 1200nm >=λ >=900nm;Power p is, 1.1w >=p >=0.8w;Tranmitting frequency f is, 100khz≥f≥80khz.

Scribing sweep speed v is: 200mm/s≤v≤300mm/s.

Above by specific embodiment, the present invention is described in detail, but these have not been constituted to the present invention's Limit.Without departing from the principles of the present invention, those skilled in the art also can make many deformation and improve, these Should be regarded as protection scope of the present invention.

Claims (1)

1. a kind of reduce the laser scribing method that chip suffers that physical stress damages it is characterised in that: swash from wafer rear is incident Light, laser scanning confocal is in the front surface in Wafer Dicing road first;Select the lasing light emitter energy setting intensity so that Wafer Dicing Covalent bond energy between road surface crystal is formed unformed layer by sufficient scission of link, to reduce the transmission capacity of mechanical stress;Same Multiple laser scanning in one dicing lane, the scanning laser depth of focus is successively from deep to shallow;Spacing between scanning laser focus point Setting, considers the coordination between sweep speed and lasing light emitter tranmitting frequency in the horizontal it should be ensured that being smaller than of focus point Effective scission of link area radius in lasing light emitter used;
The technological parameter of described laser scribing is: lasing light emitter wavelength X: 1200nm >=λ >=900nm;Laser power p:1.1w >=p >= 0.8w;Laser emission frequency f:100khz >=f >=80khz;Scribing sweep speed v:200mm/s≤v≤300mm/s.
CN201310423337.9A 2013-09-17 2013-09-17 Laser scribing method reducing chip physical stress damage CN104439711B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310423337.9A CN104439711B (en) 2013-09-17 2013-09-17 Laser scribing method reducing chip physical stress damage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310423337.9A CN104439711B (en) 2013-09-17 2013-09-17 Laser scribing method reducing chip physical stress damage

Publications (2)

Publication Number Publication Date
CN104439711A CN104439711A (en) 2015-03-25
CN104439711B true CN104439711B (en) 2017-01-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604891B2 (en) * 2016-04-06 2019-11-13 株式会社ディスコ Wafer generation method
CN106653874B (en) * 2016-12-28 2018-04-17 中国电子科技集团公司第十八研究所 A kind of implementation method of III V II-VI group solar cell evaporation antireflective coating

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019667A (en) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd Method for dividing semiconductor wafer by utilizing laser beam
JP2005129607A (en) * 2003-10-22 2005-05-19 Disco Abrasive Syst Ltd Method of dividing wafer
JP2007284269A (en) * 2006-04-13 2007-11-01 Seiko Epson Corp Laser scribing method and electrooptical device
JP5476063B2 (en) * 2009-07-28 2014-04-23 浜松ホトニクス株式会社 Processing object cutting method
JP5860219B2 (en) * 2011-03-10 2016-02-16 株式会社ディスコ Laser processing equipment

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