CN106825941B - A kind of front laser inner-cutting method of Silicon Wafer - Google Patents
A kind of front laser inner-cutting method of Silicon Wafer Download PDFInfo
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- CN106825941B CN106825941B CN201611234705.5A CN201611234705A CN106825941B CN 106825941 B CN106825941 B CN 106825941B CN 201611234705 A CN201611234705 A CN 201611234705A CN 106825941 B CN106825941 B CN 106825941B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 115
- 239000010703 silicon Substances 0.000 title claims abstract description 115
- 238000005520 cutting process Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005336 cracking Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 230000009172 bursting Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 95
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920000915 polyvinyl chloride Polymers 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention provides a kind of front laser inner-cutting methods of Silicon Wafer, which comprises blue film is attached to the Silicon Wafer back side；Using Silicon Wafer front channel as positioning datum, positioning marking is carried out to the Silicon Wafer；The internal cutting focal position of the laser is set according to the Silicon Wafer thickness, the Silicon Wafer is cut along the positioning marking using the laser, so that forming N number of point of burst inside the Silicon Wafer；The Silicon Wafer is separated into single chip die according to N number of point of burst；In this way, being cut using laser in the front of the Silicon Wafer, without overleaf production cutting position line, reduce production process and operating time；And Silicon Wafer is cut using laser inner-cutting method, the excessive problem of chipping is avoided, improves the earning rate of chip.
Description
Technical Field
The invention belongs to the technical field of laser application, and particularly relates to a front laser internal cutting method of a silicon wafer.
Background
Silicon wafer refers to a silicon wafer used in the fabrication of silicon semiconductor integrated circuits. Wafers are the basic raw material for making ICs. An Integrated Circuit (IC) is a circuit system that uses oxidation, etching, diffusion, etc. to form various electronic components such as diodes, transistors, etc. on a semiconductor substrate, and then the electronic components are fabricated on a small area to achieve a specific logic function and meet the preset circuit function requirements.
The wafer is purified by silicon element, then the pure silicon is made into long silicon crystal bar to become the material of quartz semiconductor for manufacturing integrated circuit, and the polysilicon is melted and pulled out of the single crystal silicon crystal bar by the procedures of photoengraving, grinding, polishing, slicing, etc., and then the wafer is cut into thin wafers, and then the wafers are cut into individual crystal grains.
In the prior art, when a wafer is cut, the cutting procedure is complex, and a large amount of processing time is consumed; and the yield of the chip is reduced due to the overlarge edge breakage.
Disclosure of Invention
Aiming at the problems in the prior art, the embodiment of the invention provides a front laser internal cutting method of a silicon wafer, which is used for solving the technical problems that the cutting procedure is complex and the chip yield is low when the silicon wafer is cut in the prior art.
The invention provides a front laser internal cutting method of a silicon wafer, which comprises the following steps:
attaching a blue film to the back of the silicon wafer;
taking the groove on the front surface of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer;
setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer;
separating the silicon wafer into single chip dies according to the N bursting points.
In the above scheme, the laser is: near infrared laser, green laser, or ultraviolet laser.
In the above scheme, the pulse width of the laser is: nanosecond, picosecond, or femtosecond.
In the above scheme, the inner cutting focus is located at a position 40% -60% of the thickness of the silicon wafer.
In the above scheme, the longitudinal length of the burst point is 10% -20% of the thickness of the silicon wafer.
In the scheme, the cutting line width of the laser is less than 10 microns.
In the scheme, the wavelength of the near-infrared laser is 1064nm or 1030 nm.
In the above scheme, the wavelength of the green laser is 532nm or 515 nm.
In the scheme, the wavelength of the ultraviolet laser is 355nm, 343nm or 266 nm.
In the above scheme, the thickness of the silicon wafer is 50-200 μm.
The invention provides a front laser internal cutting method of a silicon wafer, which comprises the following steps: attaching a blue film to the back of the silicon wafer; taking the groove on the front surface of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer; setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer; separating the silicon wafer into single chip crystal grains according to the N bursting points; therefore, the front side of the silicon wafer is cut by using laser, and a cutting positioning line does not need to be manufactured on the back side, so that the manufacturing process and the operation time are reduced; and the silicon wafer is cut by adopting the laser internal cutting method, so that the problem of overlarge edge breakage is avoided, and the yield of the chip is improved.
Drawings
Fig. 1 is a schematic flow chart of a front laser internal cutting method for a silicon wafer according to an embodiment of the present invention;
fig. 2 is a schematic overall structure diagram of a silicon wafer according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a single chip die according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a formation of a crack point in a silicon wafer according to an embodiment of the present invention.
Detailed Description
In order to solve the technical problems of complex cutting process and low chip yield rate in the prior art when the silicon wafer is cut, the invention provides a front laser internal cutting method of the silicon wafer, which comprises the following steps: attaching a blue film to the back of the silicon wafer; taking the groove on the front surface of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer; setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer; separating the silicon wafer into single chip dies according to the N bursting points.
The technical solution of the present invention is further described in detail by the accompanying drawings and the specific embodiments.
Example one
This embodiment provides a front laser internal cutting method of a silicon wafer, as shown in fig. 1, the method includes:
and S101, attaching a blue film to the back surface of the silicon wafer.
In this step, a blue film needs to be attached to the back surface of the silicon wafer before the silicon wafer is diced. Specifically, a silicon wafer is placed in the center of a laminator with the front surface facing downwards; pulling the blue film from the reel, wherein the length of the blue film is slightly longer than that of the circular iron ring and tensioning the blue film until no wrinkles exist; the roller rolls continuously to make the blue film cling to the back of the silicon wafer, and the blue film exceeding the circular iron ring is cut off. The blue film is a protective film for protecting a surface loop in a cutting process and is mostly made of PVC (polyvinyl chloride).
And S102, taking the front groove of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer.
In this step, after the blue film is pasted, the silicon wafer is subjected to positioning scribing by using the front groove of the silicon wafer as a positioning reference. Here, the silicon wafer front side channel 21 can be seen in fig. 2. The thickness of the silicon wafer is 50-200 μm.
S103, setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer.
In this step, the position of an internal cutting focus of the laser is set according to the thickness of the silicon wafer, and the internal cutting focus is located at 40% -60% of the thickness of the silicon wafer. And after the position of the internal cutting focal point is determined, cutting the silicon wafer along the positioning scribing line by using the laser, so that N cracking points are formed in the silicon wafer.
Here, the laser light is: near infrared laser, green laser, or ultraviolet laser.The pulse width of the laser is: nanosecond level (10)-9s), picosecond scale (10)-12s) or femtosecond (10)-15s)。
The wavelength of the near-infrared laser is 1064nm or 1030 nm; the wavelength of the green laser is 532nm or 515 nm; the wavelength of the ultraviolet laser is 355nm, 343nm or 266 nm. The cutting line width of the laser is less than 10 mu m, and the cutting speed can reach 1000 mm/s.
And S104, separating the silicon wafer into single chip crystal grains according to the N bursting points.
In this step, after the formation of the crack points, a mechanical splinter mode is used to form cracks by stress diffusion to the upper and lower surfaces according to the N crack points, and the silicon wafer is separated into single chip crystal grains, wherein the longitudinal length (depth of focus) of the crack points is 10% -20% of the thickness of the silicon wafer. The single chip die can be seen in fig. 3.
Example two
In practical application, when the method provided in the first embodiment is used to cut a silicon wafer with a thickness of 200 μm, the following steps are specifically performed:
a blue film needs to be attached to the back surface of the silicon wafer before the silicon wafer is diced. Specifically, a silicon wafer is placed in the center of a laminator with the front surface facing downwards; pulling the blue film from the reel, wherein the length of the blue film is slightly longer than that of the circular iron ring and tensioning the blue film until no wrinkles exist; the roller rolls continuously to make the blue film cling to the back of the silicon wafer, and the blue film exceeding the circular iron ring is cut off. The blue film is a protective film for protecting a surface loop in a cutting process and is mostly made of PVC (polyvinyl chloride).
And after the blue film is pasted, positioning and scribing the silicon wafer by taking the front groove of the silicon wafer as a positioning reference. Here, the silicon wafer front side channel 21 can be seen in fig. 2. The thickness of the silicon wafer is 200 μm.
And setting the position of an internal cutting focus of the laser according to the thickness of the silicon wafer, wherein the internal cutting focus is positioned at the position of 40-60% of the thickness of the silicon wafer, namely the position of the focus is 80-120 mu m away from the upper surface of the silicon wafer. And after the position of the internal cutting focal point is determined, cutting the silicon wafer along the positioning scribing line by using the laser, so that N cracking points are formed in the silicon wafer. The burst point 41 can be seen in fig. 4.
Here, the laser light is: near infrared laser, green laser, or ultraviolet laser. The pulse width of the laser is: nanosecond level (10)-9s), picosecond scale (10)-12s) or femtosecond (10)-15s)。
The wavelength of the near-infrared laser is 1064nm or 1030 nm; the wavelength of the green laser is 532nm or 515 nm; the wavelength of the ultraviolet laser is 355nm, 343nm or 266 nm. The cutting line width of the laser is less than 10 mu m, and the cutting speed can reach 1000 mm/s.
After the formation of the burst points, utilizing a mechanical cracking mode, forming cracks by stress diffusion to the upper surface and the lower surface according to the N burst points, and separating the silicon wafer into single chip crystal grains, wherein the longitudinal length (focal depth) of each burst point is 10% -20% of the thickness of the silicon wafer, namely the focal depth is 20-40 μm. The single chip die can be seen in fig. 3.
The beneficial effects brought by one or more embodiments of the invention are as follows:
the invention provides a front laser internal cutting method of a silicon wafer, which comprises the following steps: attaching a blue film to the back of the silicon wafer; taking the groove on the front surface of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer; setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer; separating the silicon wafer into single chip crystal grains according to the N bursting points; therefore, the front side of the silicon wafer is cut by using laser, and a cutting positioning line does not need to be manufactured on the back side, so that the manufacturing process and the operation time are reduced; and the silicon wafer is cut by adopting a laser internal cutting method, and after N cracking points are formed in the silicon wafer, cracks are formed by the stress spread to the upper surface and the lower surface, so that the silicon wafer is cut, the problem of overlarge edge breakage is avoided, and the yield of the chip is improved.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.
Claims (7)
1. A method of front side laser internal cutting of a silicon wafer, the method comprising:
attaching a blue film to the back of the silicon wafer;
taking the groove on the front surface of the silicon wafer as a positioning reference, and performing positioning scribing on the silicon wafer;
setting the position of an internal cutting focal point of the laser according to the thickness of the silicon wafer, and cutting the silicon wafer along the positioning scribing line by using the laser so as to form N cracking points in the silicon wafer;
separating the silicon wafer into single chip crystal grains according to the N bursting points; wherein,
the inner cutting focus is positioned at the position of 40% -60% of the thickness of the silicon wafer;
the longitudinal length of the burst point is 10% -20% of the thickness of the silicon wafer;
the cutting line width of the laser is less than 10 mu m.
2. The method of claim 1, wherein the laser is: near infrared laser, green laser, or ultraviolet laser.
3. The method of claim 1, wherein the laser has a pulse width of: nanosecond, picosecond, or femtosecond.
4. The method of claim 2, wherein the near-infrared laser has a wavelength of 1064nm or 1030 nm.
5. The method of claim 2, wherein the green laser light has a wavelength of 532nm or 515 nm.
6. The method of claim 2, wherein the ultraviolet laser has a wavelength of 355nm, 343nm, or 266 nm.
7. The method of claim 1, wherein the silicon wafer has a thickness of 50-200 μ ι η.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611234705.5A CN106825941B (en) | 2016-12-28 | 2016-12-28 | A kind of front laser inner-cutting method of Silicon Wafer |
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| CN201611234705.5A CN106825941B (en) | 2016-12-28 | 2016-12-28 | A kind of front laser inner-cutting method of Silicon Wafer |
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| CN106825941A CN106825941A (en) | 2017-06-13 |
| CN106825941B true CN106825941B (en) | 2019-05-10 |
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| CN112809170A (en) * | 2019-10-29 | 2021-05-18 | 大族激光科技产业集团股份有限公司 | Silicon wafer cutting device and method |
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| CN102079015A (en) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip |
| CN102097546A (en) * | 2010-11-25 | 2011-06-15 | 山东华光光电子有限公司 | Method for cutting LED chip |
| CN102897708A (en) * | 2011-07-29 | 2013-01-30 | 美新半导体（无锡）有限公司 | Cutting method for MEMS wafer |
| CN103358032A (en) * | 2013-07-31 | 2013-10-23 | 江阴长电先进封装有限公司 | Wafer level scribing method for CIS (Cmos image sensor) product |
| CN103537805A (en) * | 2012-07-17 | 2014-01-29 | 深圳市大族激光科技股份有限公司 | Wafer laser cutting method and wafer processing method |
| CN103545253A (en) * | 2012-07-17 | 2014-01-29 | 深圳市大族激光科技股份有限公司 | Laser processing method for wafer |
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2016
- 2016-12-28 CN CN201611234705.5A patent/CN106825941B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102079015A (en) * | 2010-11-25 | 2011-06-01 | 山东华光光电子有限公司 | Laser-cutting method of GaAs-based LED (Light-Emitting Diode) chip |
| CN102097546A (en) * | 2010-11-25 | 2011-06-15 | 山东华光光电子有限公司 | Method for cutting LED chip |
| CN102897708A (en) * | 2011-07-29 | 2013-01-30 | 美新半导体（无锡）有限公司 | Cutting method for MEMS wafer |
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