CN102569056A - Optical device wafer processing method - Google Patents

Optical device wafer processing method Download PDF

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CN102569056A
CN102569056A CN2011104241376A CN201110424137A CN102569056A CN 102569056 A CN102569056 A CN 102569056A CN 2011104241376 A CN2011104241376 A CN 2011104241376A CN 201110424137 A CN201110424137 A CN 201110424137A CN 102569056 A CN102569056 A CN 102569056A
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optical device
substrate
transfer substrate
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layer
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关家一马
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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Abstract

本发明的光器件晶片的加工方法将光器件晶片中的光器件层转移到移设基板，光器件层隔着缓冲层层叠在外延基板的表面，并在由呈格子状形成的多个切割道划分出的多个区域内形成有光器件，包括：移设基板接合步骤，使移设基板与光器件层的表面接合；移设基板切断步骤，将与光器件层的表面接合的移设基板与光器件层一起沿着切割道切断；剥离用激光束照射步骤，将被实施了移设基板切断步骤后的移设基板贴附在保持部件上，通过从层叠有与移设基板接合的光器件层的外延基板的背面侧将聚光点定位于缓冲层而照射透过外延基板的激光束，分解缓冲层；以及外延基板剥离步骤，在实施了剥离用激光束照射步骤后，从光器件层剥离外延基板。

Figure 201110424137

In the processing method of the optical device wafer of the present invention, the optical device layer in the optical device wafer is transferred to the transfer substrate, the optical device layer is stacked on the surface of the epitaxial substrate through the buffer layer, and the optical device layer is formed on a plurality of dicing lines formed in a lattice shape. Optical devices are formed in the divided regions, including: a transfer substrate bonding step, bonding the transfer substrate to the surface of the optical device layer; a transfer substrate cutting step, bonding the transfer substrate to the surface of the optical device layer Cut along the scribe line together with the optical device layer; the laser beam irradiation step for peeling, attach the transfer substrate after the step of cutting the transfer substrate to the holding member, The back side of the epitaxial substrate of the device layer positions the focus point on the buffer layer and irradiates the laser beam passing through the epitaxial substrate to decompose the buffer layer; Layer peeled epitaxial substrate.

Figure 201110424137

Description

光器件晶片的加工方法Processing method of optical device wafer

技术领域 technical field

本发明涉及光器件晶片的加工方法，该加工方法将光器件晶片中的光器件层转移到移设基板，其中，在蓝宝石基板或碳化硅等的外延基板的表面上隔着缓冲层层叠由n型半导体层和p型半导体层构成的光器件层，在光器件层上在由呈格子状形成的多个切割道划分出的多个区域内形成有发光二极管、激光二极管等的光器件。The present invention relates to a processing method of an optical device wafer, in which an optical device layer in an optical device wafer is transferred to a transfer substrate, in which n An optical device layer composed of a p-type semiconductor layer and a p-type semiconductor layer, on which optical devices such as light-emitting diodes and laser diodes are formed in a plurality of regions defined by a plurality of dicing lines formed in a grid pattern.

背景技术 Background technique

在光器件制造步骤中，在大致圆板形状的蓝宝石基板或碳化硅等的外延基板的表面上隔着缓冲层层叠有由n型半导体层和p型半导体层构成的光器件层，在光器件层上在由呈格子状形成的多个切割道划分出的多个区域内形成有发光二极管、激光二极管等的光器件，从而构成光器件晶片。然后，通过沿着切割道分割光器件晶片来制造各个光器件(例如，参照专利文献1)。In the optical device manufacturing process, an optical device layer composed of an n-type semiconductor layer and a p-type semiconductor layer is laminated on the surface of a substantially disc-shaped sapphire substrate or an epitaxial substrate such as silicon carbide with a buffer layer interposed therebetween. On the layer, optical devices such as light-emitting diodes and laser diodes are formed in a plurality of regions defined by a plurality of dicing lines formed in a grid pattern, thereby constituting an optical device wafer. Then, individual optical devices are manufactured by dividing the optical device wafer along dicing lines (for example, refer to Patent Document 1).

并且，作为提高光器件的亮度的技术，在下述专利文献2中公开了以下被称为剥离的制造方法：使在构成光器件晶片的蓝宝石基板或碳化硅等的外延基板的表面上隔着缓冲层层叠的由n型半导体层和p型半导体层构成的光器件层隔着金(Au)、铂(Pt)、铬(Cr)、铟(In)、钯(Pb)等的接合金属层与钼(Mo)、铜(Cu)、硅(Si)等的移设基板接合，通过从外延基板的背面侧向缓冲层照射激光来剥离外延基板，将光器件层转移到移设基板上。In addition, as a technique for improving the brightness of an optical device, the following Patent Document 2 discloses a manufacturing method called lift-off in which a buffer is placed on the surface of an epitaxial substrate such as a sapphire substrate or silicon carbide constituting an optical device wafer. The optical device layer consisting of an n-type semiconductor layer and a p-type semiconductor layer is laminated with a junction metal layer such as gold (Au), platinum (Pt), chromium (Cr), indium (In), palladium (Pb) and the like. For transfer substrate bonding of molybdenum (Mo), copper (Cu), silicon (Si), etc., the epitaxial substrate is peeled off by irradiating laser light on the buffer layer from the back side of the epitaxial substrate, and the optical device layer is transferred to the transfer substrate.

【专利文献1】日本特开平10-305420号公报[Patent Document 1] Japanese Patent Application Laid-Open No. 10-305420

【专利文献2】日本特表2005-516415号公报[Patent Document 2] Japanese National Publication No. 2005-516415

在上述的专利文献2中公开的技术中，由于在使移设基板与层叠在外延基板的表面上的光器件层接合时加热到220℃～300℃的温度，因而由于外延基板和移设基板的线膨胀系数的差异而使由外延基板和移设基板构成的接合体发生翘曲。因此，当从光器件层剥离外延基板时，难以使激光束的聚光点定位在外延基板和光器件层之间的缓冲层，存在这样的问题：使光器件层损伤，或者不能可靠地分解缓冲层而不能顺利剥离外延基板。In the technology disclosed in the aforementioned Patent Document 2, since the transfer substrate is heated to a temperature of 220° C. to 300° C. when bonding the transfer substrate to the optical device layer laminated on the surface of the epitaxial substrate, the epitaxial substrate and the transfer substrate The difference in the coefficient of linear expansion causes the bonded body composed of the epitaxial substrate and the transfer substrate to warp. Therefore, when the epitaxial substrate is peeled off from the optical device layer, it is difficult to position the converging point of the laser beam on the buffer layer between the epitaxial substrate and the optical device layer, and there is a problem that the optical device layer is damaged, or the buffer layer cannot be reliably decomposed. layer and the epitaxial substrate cannot be peeled off smoothly.

发明内容 Contents of the invention

本发明是鉴于上述情况而作成的，本发明的主要技术课题是提供一种可使层叠在构成光器件晶片的外延基板的表面上的光器件层顺利转移到移设基板而不使该光器件层受到损伤的光器件晶片的加工方法。The present invention was made in view of the above circumstances, and the main technical subject of the present invention is to provide an optical device layer that can be smoothly transferred to the transfer substrate without causing the optical device layer to be laminated on the surface of the epitaxial substrate constituting the optical device wafer. A method for processing optical device wafers with layers damaged.

为了解决上述的主要技术课题，根据本发明，提供了一种光器件晶片的加工方法，该加工方法将光器件晶片中的光器件层转移到移设基板上，所述光器件层隔着缓冲层层叠在外延基板的表面，并在由呈格子状形成的多个切割道划分出的多个区域内形成有光器件，所述光器件晶片的加工方法的特征在于，所述加工方法包括：移设基板接合步骤，使移设基板与在该外延基板的表面上隔着该缓冲层层叠的该光器件层的表面接合；移设基板切断步骤，将与该光器件层的表面接合的该移设基板与该光器件层一起沿着该切割道切断；剥离用激光束照射步骤，将被实施了该移设基板切断步骤后的该移设基板贴附在保持部件上，从层叠有与该移设基板接合的该光器件层的该外延基板的背面侧使聚光点定位于该缓冲层而照射透过该外延基板的激光束，从而分解该缓冲层；以及外延基板剥离步骤，在实施了该剥离用激光束照射步骤后，从该光器件层剥离该外延基板。In order to solve the above-mentioned main technical problems, according to the present invention, a processing method of an optical device wafer is provided. In the processing method, the optical device layer in the optical device wafer is transferred to a transfer substrate, and the optical device layer is separated by a buffer. Layers are stacked on the surface of the epitaxial substrate, and optical devices are formed in a plurality of regions divided by a plurality of dicing lines formed in a grid shape. The processing method of the optical device wafer is characterized in that the processing method includes: a transfer substrate bonding step of bonding the transfer substrate to the surface of the optical device layer laminated on the surface of the epitaxial substrate via the buffer layer; a transfer substrate cutting step of bonding the surface of the optical device layer to the surface of the epitaxial substrate The transfer substrate is cut along the scribe line together with the optical device layer; the step of irradiating the laser beam for peeling is carried out, and the transfer substrate after the step of cutting the transfer substrate is attached to the holding member. The back side of the epitaxial substrate of the optical device layer bonded by the transfer substrate is positioned at the buffer layer to irradiate a laser beam passing through the epitaxial substrate, thereby decomposing the buffer layer; and the epitaxial substrate peeling step, in After performing the laser beam irradiation step for peeling, the epitaxial substrate is peeled from the optical device layer.

上述移设基板切断步骤利用切削刀将移设基板沿着切割道切断。并且，上述移设基板切断步骤通过沿着移设基板的切割道照射激光束来将移设基板沿着切割道切断。In the step of cutting the transferred substrate, the transferred substrate is cut along the scribe line by a cutting knife. In addition, in the transfer substrate cutting step, the transfer substrate is cut along the scribe line by irradiating the laser beam along the scribe line of the transfer substrate.

在本发明的光器件晶片的加工方法中，该加工方法包括：移设基板接合步骤，使移设基板与隔着缓冲层层叠在外延基板的表面的光器件层的表面接合；移设基板切断步骤，将与光器件层的表面接合的移设基板与光器件层一起沿着切割道切断；剥离用激光束照射步骤，将被实施了移设基板切断步骤后的移设基板贴附在保持部件上，从层叠有与移设基板接合的光器件层的外延基板的背面侧将聚光点定位于缓冲层而照射透过外延基板的激光束，从而分解缓冲层；以及外延基板剥离步骤，在实施了剥离用激光束照射步骤后，从光器件层剥离外延基板，因而在实施剥离用激光束照射步骤时，通过将移设基板沿着切割道切断，可消除由于外延基板和移设基板的线膨胀系数的差异而产生的发生在由外延基板和移设基板构成的接合体上的翘曲，因而可使激光束的聚光点准确定位在缓冲层上。并且，缓冲层由氮化镓(GaN)形成，通过激光束的照射被分解为2GaN→2Ga+N2，产生N2气体，给光器件层带来不良影响，然而由于移设基板3被分割为各个光器件，因而通过分割槽排出N2气体，减轻了对光器件层的不良影响。In the processing method of an optical device wafer according to the present invention, the processing method includes: a transfer substrate bonding step of bonding the transfer substrate to the surface of the optical device layer stacked on the surface of the epitaxial substrate through a buffer layer; The step of cutting the transfer substrate bonded to the surface of the optical device layer along with the optical device layer along the scribe line; the step of irradiating the transfer substrate with a laser beam for peeling, attaching the transfer substrate after the step of cutting the transfer substrate to the holding On the component, positioning the light-concentrating point on the buffer layer from the back side of the epitaxial substrate on which the optical device layer bonded to the transfer substrate is laminated, and irradiating a laser beam passing through the epitaxial substrate, thereby decomposing the buffer layer; and the step of peeling off the epitaxial substrate, The epitaxial substrate is peeled from the optical device layer after the step of irradiating the laser beam for detachment. Therefore, when the step of irradiating the laser beam for detachment is performed, by cutting the transfer substrate along the scribe line, the gap between the epitaxial substrate and the transfer substrate can be eliminated. The warpage that occurs on the bonded body composed of the epitaxial substrate and the transfer substrate due to the difference in the linear expansion coefficient of the laser beam can be accurately positioned on the buffer layer. In addition, the buffer layer is formed of gallium nitride (GaN), which is decomposed into 2GaN→2Ga+N2 by laser beam irradiation, and N2 gas is generated, which adversely affects the optical device layer. However, since the transfer substrate 3 is divided into individual Optical devices, so the N2 gas is discharged through the division groove, which reduces the adverse effect on the optical device layer.

附图说明 Description of drawings

图1是示出使用本发明的光器件晶片的加工方法进行加工的光器件晶片的立体图和将主要部分放大的剖视图。1 is a perspective view showing an optical device wafer processed by a method for processing an optical device wafer according to the present invention, and an enlarged cross-sectional view of a main part.

图2是本发明的光器件晶片的分割方法中的移设基板接合步骤的说明图。2 is an explanatory diagram of a transfer substrate bonding step in the method of dividing an optical device wafer according to the present invention.

图3是用于实施本发明的光器件晶片的分割方法中的移设基板切断步骤的第1实施方式的切削装置的主要部分立体图。3 is a perspective view of a main part of a cutting device according to a first embodiment for carrying out a transfer substrate cutting step in the method of dividing an optical device wafer according to the present invention.

图4是示出本发明的光器件晶片的分割方法中的移设基板切断步骤的第1实施方式的说明图。4 is an explanatory view showing a first embodiment of a transfer substrate cutting step in the method of dividing an optical device wafer according to the present invention.

图5是用于实施本发明的光器件晶片的分割方法中的移设基板切断步骤的第2实施方式的激光加工装置的主要部分立体图。5 is a perspective view of main parts of a laser processing apparatus according to a second embodiment for carrying out a transfer substrate cutting step in the method of dividing an optical device wafer according to the present invention.

图6是示出本发明的光器件晶片的分割方法中的移设基板切断步骤的第2实施方式的说明图。6 is an explanatory view showing a second embodiment of a transfer substrate cutting step in the method of dividing an optical device wafer according to the present invention.

图7是本发明的光器件晶片的分割方法中的光器件晶片支撑步骤的说明图。FIG. 7 is an explanatory diagram of an optical device wafer supporting step in the method for dividing an optical device wafer according to the present invention.

图8是用于实施本发明的光器件晶片的分割方法中的剥离用激光束照射步骤的激光加工装置的主要部分立体图。8 is a perspective view of a main part of a laser processing apparatus for carrying out a step of irradiating a laser beam for delamination in the method for dividing an optical device wafer according to the present invention.

图9是本发明的光器件晶片的分割方法中的剥离用激光束照射步骤的说明图。Fig. 9 is an explanatory diagram of a step of irradiating a laser beam for delamination in the method of dividing an optical device wafer according to the present invention.

图10是本发明的光器件晶片的分割方法中的外延基板剥离步骤的说明图。FIG. 10 is an explanatory diagram of an epitaxial substrate peeling step in the method of dividing an optical device wafer according to the present invention.

标号说明Label description

2：光器件晶片；20：外延基板；21：光器件层；22：缓冲层；3：移设基板；4：接合金属层；5：切削装置；51：切削装置的工作盘；52：切削单元；521：切削刀；6：激光加工装置；61：激光加工装置的工作盘；62：激光束照射单元；622：聚光器；7：激光加工装置；71：激光加工装置的工作盘；72：激光束照射单元；722：聚光器；F：环状框架；T：切割带。2: optical device wafer; 20: epitaxial substrate; 21: optical device layer; 22: buffer layer; 3: transfer substrate; 4: bonding metal layer; 5: cutting device; 51: working disk of cutting device; 52: cutting Unit; 521: cutting knife; 6: laser processing device; 61: working disk of laser processing device; 62: laser beam irradiation unit; 622: condenser; 7: laser processing device; 71: working disk of laser processing device; 72: laser beam irradiation unit; 722: condenser; F: ring frame; T: cutting tape.

具体实施方式 Detailed ways

下面，参照附图详细说明本发明的光器件晶片的加工方法的优选实施方式。Hereinafter, preferred embodiments of the optical device wafer processing method of the present invention will be described in detail with reference to the drawings.

图1示出使用本发明的光器件晶片的加工方法进行加工的光器件晶片的立体图。在图1所示的光器件晶片2中，在大致圆板形状的蓝宝石基板或碳化硅等的外延基板20的表面20a上，使用外延生长法形成由n型氮化镓半导体层211和p型氮化镓半导体层212构成的光器件层21。另外，在外延基板20的表面使用外延生长法层叠由n型氮化镓半导体层211和p型氮化镓半导体层212构成的光器件层21时，在外延基板20的表面20a和形成光器件层21的n型氮化镓半导体层211之间形成由氮化镓(GaN)构成的缓冲层22。在这样构成的光器件晶片2中，在图示的实施方式中，外延基板20的厚度形成为例如430μm，包含缓冲层22的光器件层21的厚度形成为例如5μm。另外，在光器件层21中，如图1(a)所示在由呈格子状形成的多个切割道所划分的多个区域内形成光器件24。FIG. 1 shows a perspective view of an optical device wafer processed using the method for processing an optical device wafer of the present invention. In the optical device wafer 2 shown in FIG. 1, an n-type gallium nitride semiconductor layer 211 and a p-type gallium nitride semiconductor layer 211 are formed on the surface 20a of an epitaxial substrate 20 such as a substantially disc-shaped sapphire substrate or silicon carbide, using an epitaxial growth method. The optical device layer 21 composed of the gallium nitride semiconductor layer 212 . In addition, when the optical device layer 21 composed of the n-type gallium nitride semiconductor layer 211 and the p-type gallium nitride semiconductor layer 212 is laminated on the surface of the epitaxial substrate 20 using the epitaxial growth method, the optical device layer 21 is formed on the surface 20a of the epitaxial substrate 20 and the surface 20a of the epitaxial substrate 20. A buffer layer 22 made of gallium nitride (GaN) is formed between the n-type gallium nitride semiconductor layers 211 of the layer 21 . In the optical device wafer 2 thus constituted, in the illustrated embodiment, the thickness of the epitaxial substrate 20 is formed to be, for example, 430 μm, and the thickness of the optical device layer 21 including the buffer layer 22 is formed to be, for example, 5 μm. In addition, in the optical device layer 21 , as shown in FIG. 1( a ), the optical devices 24 are formed in a plurality of regions divided by a plurality of scribe lines formed in a lattice shape.

如上所述，为了将光器件晶片2中的外延基板20从光器件层21剥离并转移到移设基板，实施使移设基板与光器件层21的表面21a接合的移设基板接合步骤。即，如图2(a)和(b)所示，使厚度例如220μm的移设基板3隔着接合金属层4与形成在构成光器件晶片2的外延基板20的表面20a的光器件层21的表面21a接合。另外，作为移设基板3，可使用钼(Mo)、铜(Cu)、硅(Si)等，并且，作为形成接合金属层4的接合金属，可使用金(Au)、铂(Pt)、铬(Cr)、铟(In)、钯(Pb)等。在该移设基板接合步骤中，在形成于外延基板20的表面20a上的光器件层21的表面21a或移设基板3的表面3a上蒸镀上述接合金属，形成厚度是3μm左右的接合金属层4，使该接合金属层4和移设基板3的表面3a或光器件层21的表面21a面对面压接，从而可使移设基板3的表面3a隔着接合金属层4与构成光器件晶片2的光器件层21的表面21a接合。这样在使移设基板3与形成于外延基板20的表面20a上的光器件层21的表面21a接合时加热到220℃～300℃的温度，因而由于外延基板20和移设基板3的线膨胀系数的差异而使由外延基板20和移设基板3构成的接合体发生翘曲。该翘曲量在外延基板20的直径是10cm的情况下是0.5mm左右。As described above, in order to peel the epitaxial substrate 20 in the optical device wafer 2 from the optical device layer 21 and transfer it to the transfer substrate, a transfer substrate bonding step of bonding the transfer substrate to the surface 21 a of the optical device layer 21 is performed. That is, as shown in FIGS. 2( a ) and ( b ), the transfer substrate 3 having a thickness of, for example, 220 μm is interposed between the bonding metal layer 4 and the optical device layer 21 formed on the surface 20 a of the epitaxial substrate 20 constituting the optical device wafer 2 . The surface 21a of the joint. In addition, molybdenum (Mo), copper (Cu), silicon (Si), etc. can be used as the transfer substrate 3, and gold (Au), platinum (Pt), Chromium (Cr), indium (In), palladium (Pb), etc. In this transfer substrate bonding step, the above-mentioned bonding metal is vapor-deposited on the surface 21a of the optical device layer 21 formed on the surface 20a of the epitaxial substrate 20 or the surface 3a of the transfer substrate 3 to form a bonding metal having a thickness of about 3 μm. layer 4, the bonding metal layer 4 and the surface 3a of the transfer substrate 3 or the surface 21a of the optical device layer 21 are pressure-bonded face to face, so that the surface 3a of the transfer substrate 3 can be connected to the optical device wafer via the bonding metal layer 4 2 to the surface 21a of the optical device layer 21. In this way, when the transfer substrate 3 is bonded to the surface 21a of the optical device layer 21 formed on the surface 20a of the epitaxial substrate 20, it is heated to a temperature of 220° C. to 300° C. Due to the linear expansion of the epitaxial substrate 20 and the transfer substrate 3 Due to the difference in coefficient, the bonded body composed of the epitaxial substrate 20 and the transfer substrate 3 warps. This warpage amount is about 0.5 mm when the diameter of the epitaxial substrate 20 is 10 cm.

在实施了上述的移设基板接合步骤之后，实施将移设基板3与光器件层21一起沿着切割道23切断的移设基板切断步骤。参照图3和图4说明该移设基板切断步骤的第1实施方式。移设基板切断步骤的第1实施方式使用图3所示的切削装置5来实施。图3所示的切削装置5具有：工作盘51，其保持被加工物；切削单元52，其具有切削被保持在该工作盘51上的被加工物的切削刀521；以及摄像单元53，其拍摄被保持在工作盘51上的被加工物。另外，摄像单元53在图示的实施方式中除了利用可见光线进行摄像的通常的摄像元件(CCD)以外，还由以下等构成：红外线照明单元，其向被加工物照射红外线；光学系统，其捕获由该红外线照明单元所照射的红外线；以及摄像元件(红外线CCD)，其输出与由该光学系统所捕获的红外线对应的电信号，摄像单元53将拍摄得到的图像信号发送到未图示的控制单元。为了使用这样构成的切削装置5来实施移设基板切断步骤，在工作盘51上放置被实施了上述的移设基板接合步骤并与移设基板3接合的光器件晶片2的外延基板20。因此，与形成在构成光器件晶片2的外延基板20的表面上的光器件层21的表面21a接合的移设基板3的背面3b为上侧。然后，通过使未图示的吸引单元进行动作，将与移设基板3接合的光器件晶片2吸引保持在工作盘51上。这样，吸引保持了与移设基板3接合的光器件晶片2的工作盘51通过未图示的切削进给单元定位在摄像单元53的正下方。After performing the transfer substrate bonding step described above, a transfer substrate cutting step of cutting the transfer substrate 3 together with the optical device layer 21 along the dicing lines 23 is performed. A first embodiment of the transfer substrate cutting step will be described with reference to FIGS. 3 and 4 . The first embodiment of the transfer substrate cutting step is carried out using the cutting device 5 shown in FIG. 3 . The cutting device 5 shown in FIG. 3 has: a working disk 51, which holds a workpiece; a cutting unit 52, which has a cutting blade 521 for cutting the workpiece held on the working disk 51; and an imaging unit 53, which The workpiece held on the work table 51 is photographed. In addition, in the illustrated embodiment, the imaging unit 53 is composed of an infrared illuminating unit that irradiates infrared rays to the workpiece in addition to a normal imaging device (CCD) that uses visible light rays; an optical system that Capture the infrared rays irradiated by the infrared lighting unit; and an imaging element (infrared CCD), which outputs an electrical signal corresponding to the infrared rays captured by the optical system, and the imaging unit 53 sends the image signal captured by the camera to an unillustrated control unit. In order to perform the transfer substrate cutting step using the cutting device 5 configured in this way, the epitaxial substrate 20 of the optical device wafer 2 bonded to the transfer substrate 3 subjected to the above transfer substrate bonding step is placed on the table 51 . Therefore, the back surface 3b of the transfer substrate 3 bonded to the surface 21a of the optical device layer 21 formed on the surface of the epitaxial substrate 20 constituting the optical device wafer 2 is the upper side. Then, the optical device wafer 2 bonded to the transfer substrate 3 is sucked and held on the work table 51 by operating a suction unit (not shown). In this way, the work table 51 holding the optical device wafer 2 bonded to the transfer substrate 3 by suction and holding is positioned directly below the imaging unit 53 by the cutting feed unit (not shown).

当工作盘51定位在摄像单元53的正下方时，执行通过摄像单元53和未图示的控制单元检测移设基板3的应切削加工的加工区域的对准作业。在该对准作业中移设基板3由硅基板形成的情况下，摄像单元53和未图示的控制单元执行用于进行朝第1方向形成在构成光器件晶片2的光器件层21上的切割道23与切削刀521的位置对齐的图形匹配等的图像处理，并执行切削区域的对准(对准步骤)。对于形成在构成光器件晶片2的光器件层21上的朝与上述第1方向正交的第2方向延伸的切割道23，也同样执行切削区域的对准。另外，移设基板3定位在形成有切割道23的光器件层21的上侧，而在移设基板3由硅基板形成的情况下，由于摄像单元53如上所述由红外线照明单元、捕获红外线的光学系统以及输出与红外线对应的电信号的摄像元件(红外线CCD)等构成，因而可通过由硅基板构成的移设基板3拍摄切割道23。另外，在移设基板3由金属材料形成的情况下，利用透明体形成工作盘51的保持部，从该保持部的下侧拍摄切割道23。When the work table 51 is positioned directly under the imaging unit 53 , an alignment operation is performed to detect a processing area to be cut on the transfer substrate 3 by the imaging unit 53 and a control unit not shown. In this alignment operation, when the transfer substrate 3 is formed of a silicon substrate, the imaging unit 53 and the control unit (not shown) execute the process of forming the optical device layer 21 constituting the optical device wafer 2 in the first direction. Image processing such as pattern matching for aligning the positions of the scribe line 23 and the cutting blade 521 is performed, and the alignment of the cutting area is performed (alignment step). Alignment of cut regions is similarly performed on the dicing lines 23 extending in the second direction perpendicular to the first direction formed on the optical device layer 21 constituting the optical device wafer 2 . In addition, the transfer substrate 3 is positioned on the upper side of the optical device layer 21 on which the dicing lines 23 are formed, and in the case where the transfer substrate 3 is formed of a silicon substrate, since the imaging unit 53 captures infrared rays by the infrared illuminating unit as described above, An optical system and an imaging element (infrared CCD) that outputs an electrical signal corresponding to infrared rays can be used to image the scribe line 23 through the transfer substrate 3 made of a silicon substrate. In addition, when the transfer substrate 3 is formed of a metal material, the holding portion of the stage 51 is formed with a transparent body, and the scribe line 23 is photographed from the lower side of the holding portion.

在按以上进行了检测与被保持在工作盘51上的光器件晶片2接合的移设基板3的切削区域的对准之后，使保持了与光器件晶片2接合的移设基板3的工作盘51移动到切削作业区域，如图4(a)所示将预定的切割道23的一端从切削刀521的正下方定位在图4(a)中稍右侧。然后，使切削刀521朝由箭头521a所示的方向旋转，并使未图示的切入进给单元进行动作，将切削刀521从由双点划线所示的退避位置朝由箭头Z1所示的方向切入进给预定量。该切入进给位置被设定为切削刀521的外周缘到达缓冲层22的深度位置。这样，在实施了切削刀521的切入进给之后，在使切削刀521朝由箭头521a所示的方向旋转的同时，使工作盘51朝在图4(a)中由箭头X1所示的方向以预定的切削进给速度移动，当与被保持在工作盘51上的光器件晶片2接合的移设基板3的另一端到达图4(b)所示切削刀521的正下方的稍左侧时，停止工作盘51的移动，并使切削刀521朝由箭头Z2所示的方向上升到由双点划线所示的退避位置。结果，移设基板3如图4(c)所示与形成在构成光器件晶片2的外延基板20的表面上的光器件层21一起沿着第1方向的切割道23被切断，形成由切削槽构成的分割槽31(移设基板切断步骤)。通过对全部与切割道23对应的区域实施上述的移设基板切断步骤，在移设基板3上，如图4(d)所示沿着呈格子状形成的切割道23形成格子状的分割槽31。另外，在由外延基板20和移设基板3构成的接合体上产生0.5mm左右的翘曲，而尽管通过工作盘51的吸引得到少许缓解，也达不到零(0)，因而存在外延基板20被切削刀521切削的情况。After detecting the alignment of the cutting area of the transfer substrate 3 bonded to the optical device wafer 2 held on the work table 51 as described above, the work table holding the transfer substrate 3 bonded to the optical device wafer 2 51 moves to the cutting operation area, as shown in Figure 4 (a), one end of the predetermined cutting road 23 is positioned slightly to the right in Figure 4 (a) from directly below the cutting knife 521. Then, the cutting blade 521 is rotated in the direction shown by the arrow 521a, and the not-shown cutting feed unit is operated, and the cutting blade 521 is moved from the retracted position shown by the two-dot chain line to the direction shown by the arrow Z1. The direction of cutting into the feed predetermined amount. This plunging feed position is set to a depth position at which the outer peripheral edge of the cutting blade 521 reaches the buffer layer 22 . In this way, after the cutting feed of the cutting blade 521 is performed, while the cutting blade 521 is rotated in the direction shown by the arrow 521a, the work table 51 is turned in the direction shown by the arrow X1 in FIG. 4(a). Moving at a predetermined cutting feed rate, when the other end of the transfer substrate 3 bonded to the optical device wafer 2 held on the work plate 51 reaches the slightly left side directly below the cutting blade 521 shown in FIG. 4( b ), , the movement of the work table 51 is stopped, and the cutting blade 521 is raised in the direction indicated by the arrow Z2 to the retracted position indicated by the two-dot chain line. As a result, as shown in FIG. Dividing grooves 31 constituted by grooves (transfer substrate cutting step). By performing the above-mentioned transfer substrate cutting step on all the regions corresponding to the scribe lines 23, grid-shaped dividing grooves are formed on the transfer substrate 3 along the scribe lines 23 formed in a grid form as shown in FIG. 31. In addition, warpage of about 0.5 mm occurs in the bonded body composed of the epitaxial substrate 20 and the transfer substrate 3, and although it is slightly relieved by the suction of the work disk 51, it does not reach zero (0). 20 is cut by the cutting blade 521.

下面，参照图5和图6说明移设基板切断步骤的第2实施方式。移设基板切断步骤的第2实施方式使用图5所示的激光加工装置6来实施。图5所示的激光加工装置6具有：工作盘61，其保持被加工物；激光束照射单元62，其向被保持在该工作盘61上的被加工物照射激光束；以及摄像单元63，其拍摄被保持在工作盘61上的被加工物。工作盘61构成为吸引保持被加工物，通过未图示的加工进给单元朝图5中由箭头X所示的方向被加工进给，并通过未图示的分度进给单元朝图5中由箭头Y所示的方向被分度进给。Next, a second embodiment of the transfer substrate cutting step will be described with reference to FIGS. 5 and 6 . The second embodiment of the transfer substrate cutting step is carried out using the laser processing apparatus 6 shown in FIG. 5 . The laser processing device 6 shown in FIG. 5 has: a work disk 61 that holds a workpiece; a laser beam irradiation unit 62 that irradiates a laser beam to the workpiece held on the work disk 61; and an imaging unit 63 that It photographs the workpiece held on the work table 61 . The work table 61 is configured to attract and hold the workpiece, and is processed and fed in the direction indicated by the arrow X in FIG. The direction indicated by the arrow Y in is indexed.

上述激光束照射单元62从安装在实质上水平配置的圆筒形状的壳体621的前端的聚光器622照射脉冲激光束。并且，安装在构成上述激光束照射单元62的壳体621的前端部的摄像单元63在图示的实施方式中除了利用可见光线进行摄像的通常的摄像元件(CCD)以外，还由以下等构成：红外线照明单元，其向被加工物照射红外线；光学系统，其捕获由该红外线照明单元所照射的红外线；以及摄像元件(红外线CCD)，其输出与由该光学系统所捕获的红外线对应的电信号，摄像单元63将拍摄得到的图像信号发送到后述的控制单元。The laser beam irradiation unit 62 irradiates pulsed laser beams from a condenser 622 attached to the front end of a substantially horizontally arranged cylindrical housing 621 . In addition, the imaging unit 63 attached to the front end portion of the housing 621 constituting the laser beam irradiation unit 62 has the following configurations in addition to a normal imaging device (CCD) for imaging with visible light in the illustrated embodiment. : an infrared lighting unit that irradiates infrared rays to a workpiece; an optical system that captures infrared rays irradiated by the infrared lighting unit; and an imaging element (infrared CCD) that outputs an electric signal corresponding to the infrared rays captured by the optical system. signal, and the imaging unit 63 sends the captured image signal to the control unit described later.

参照图5和图6说明使用上述的激光加工装置6来实施的移设基板切断步骤。为了实施移设基板切断步骤，首先如上述的图5所示，在激光加工装置6的工作盘51上放置被实施了上述的移设基板接合步骤并与移设基板3接合的光器件晶片2的外延基板20。因此，与形成在构成光器件晶片2的外延基板20的表面上的光器件层21的表面21a接合的移设基板3的背面3b为上侧。然后，通过使未图示的吸引单元进行动作，将与移设基板3接合的光器件晶片2吸引保持在工作盘61上。这样，吸引保持了与移设基板3接合的光器件晶片2的工作盘61通过未图示的加工进给单元定位在摄像单元63的正下方。The transfer substrate cutting step performed using the laser processing apparatus 6 described above will be described with reference to FIGS. 5 and 6 . In order to implement the transfer substrate cutting step, first, as shown in the above-mentioned FIG. 5 , the optical device wafer 2 that has been subjected to the above-mentioned transfer substrate bonding step and bonded to the transfer substrate 3 is placed on the work table 51 of the laser processing device 6. The epitaxial substrate 20. Therefore, the back surface 3b of the transfer substrate 3 bonded to the surface 21a of the optical device layer 21 formed on the surface of the epitaxial substrate 20 constituting the optical device wafer 2 is the upper side. Then, the optical device wafer 2 bonded to the transfer substrate 3 is sucked and held on the work table 61 by operating a suction unit (not shown). In this way, the work table 61 holding the optical device wafer 2 bonded to the transfer substrate 3 by suction and holding is positioned directly below the imaging unit 63 by a process feeding unit (not shown).

当工作盘61定位在摄像单元63的正下方时，执行通过摄像单元63和未图示的控制单元检测移设基板3的应激光加工的加工区域的对准作业。在该对准作业中移设基板3由硅基板形成的情况下，摄像单元63和未图示的控制单元执行用于进行朝第1方向形成在构成光器件晶片2的光器件层21上的切割道23与沿着该切割道23照射激光束的激光束照射单元62的聚光器622的位置对准的图形匹配等的图像处理，并执行激光束照射位置的对准(对准步骤)。并且，对于形成在构成光器件晶片2的光器件层21上的朝与上述第1方向正交的第2方向延伸的切割道23，也同样执行切削区域的对准。另外，移设基板3定位在形成有切割道23的光器件层21的上侧，而在移设基板3由硅基板形成的情况下，由于摄像单元63如上所述由红外线照明单元、捕获红外线的光学系统以及输出与红外线对应的电信号的摄像元件(红外线CCD)等构成，因而可通过由硅基板构成的移设基板3拍摄切割道23。另外，在移设基板3由金属材料形成的情况下，利用透明体形成工作盘61的保持部，从该保持部的下侧拍摄切割道23。When the work plate 61 is positioned directly under the imaging unit 63 , an alignment operation is performed to detect a processing area to be laser-processed on the transferred substrate 3 by the imaging unit 63 and a control unit not shown. In this alignment operation, when the transfer substrate 3 is formed of a silicon substrate, the imaging unit 63 and the control unit (not shown) execute the process of forming the optical device layer 21 constituting the optical device wafer 2 in the first direction. image processing such as pattern matching of the alignment of the scribe line 23 with the position of the condenser 622 of the laser beam irradiation unit 62 irradiating the laser beam along the scribe line 23, and performing alignment of the laser beam irradiation position (alignment step) . Also, the alignment of the cutting area is similarly performed on the dicing lines 23 extending in the second direction perpendicular to the first direction formed on the optical device layer 21 constituting the optical device wafer 2 . In addition, the transfer substrate 3 is positioned on the upper side of the optical device layer 21 on which the dicing lines 23 are formed, and in the case where the transfer substrate 3 is formed of a silicon substrate, since the imaging unit 63 captures infrared rays by the infrared illuminating unit, as described above, An optical system and an imaging element (infrared CCD) that outputs an electrical signal corresponding to infrared rays can be used to image the scribe line 23 through the transfer substrate 3 made of a silicon substrate. In addition, when the transfer substrate 3 is formed of a metal material, the holding portion of the stage 61 is formed with a transparent body, and the scribe line 23 is photographed from the lower side of the holding portion.

在按以上进行了检测与被保持在工作盘61上的光器件晶片2接合的移设基板3的切削区域的对准之后，使保持了与光器件晶片2接合的移设基板3的工作盘61移动到图6(a)所示激光束照射单元62的聚光器622所在的激光束照射区域，使第1方向的切割道23的一端(在图6(a)中左端)定位在激光束照射单元62的聚光器622的正下方。然后，在从聚光器622向移设基板3照射具有吸收性的波长的脉冲激光束的同时，使工作盘61朝在图6(a)中由箭头X1所示的方向以预定的加工进给速度移动。然后，当如图6(b)所示切割道23的另一端(在图6(b)中右端)到达激光束照射单元62的聚光器622的照射位置时，停止脉冲激光束的照射并停止工作盘61的移动(激光束照射步骤)。在该激光束照射步骤中，使脉冲激光束的聚光点P对准移设基板3的背面3b<上面>附近。沿着形成在构成光器件晶片2的光器件层21上的全部切割道23实施上述的激光束照射步骤。After detecting the alignment of the cutting area of the transfer substrate 3 bonded to the optical device wafer 2 held on the work table 61 as described above, the work table holding the transfer substrate 3 bonded to the optical device wafer 2 61 moves to the laser beam irradiation area where the light collector 622 of the laser beam irradiation unit 62 shown in Fig. 6 (a) is located, and one end (in Fig. 6 (a) left end) of the cutting line 23 of the first direction is positioned at the laser beam irradiation area. Directly below the condenser 622 of the beam irradiation unit 62 . Then, while the transfer substrate 3 is irradiated with a pulsed laser beam having an absorbing wavelength from the light collector 622, the work disk 61 is processed in a predetermined direction in the direction indicated by the arrow X1 in FIG. 6(a). Give speed to move. Then, when the other end (right end in FIG. 6( b)) of the cutting road 23 as shown in FIG. The movement of the work disk 61 is stopped (laser beam irradiation step). In this laser beam irradiation step, the converging point P of the pulsed laser beam is aligned with the vicinity of the back surface 3 b <upper surface> of the transfer substrate 3 . The laser beam irradiation step described above is carried out along all the dicing lines 23 formed on the optical device layer 21 constituting the optical device wafer 2 .

上述激光束照射步骤中的加工条件例如被设定如下。The processing conditions in the above laser beam irradiation step are set as follows, for example.

光源         ：YAG脉冲激光器Light source : YAG pulsed laser

波长         ：355nmWavelength : 355nm

平均输出     ：7WAverage output : 7W

重复频率     ：10kHzRepetition frequency : 10kHz

聚光光点直径 ：短轴10μm，长轴10～200μm的椭圆Focus spot diameter: short axis 10μm, long axis 10～200μm ellipse

加工进给速度 ：100mm/秒Processing feed speed: 100mm/sec

在上述的加工条件中，通过沿着各切割道23实施上述激光束照射步骤4～6次，如图6(c)所示，移设基板3与形成在构成光器件晶片2的外延基板20的表面上的光器件层21一起沿着预定的切割道23被切断，形成由激光加工槽构成的分割槽31(移设基板切断步骤)。通过对全部与切割道23对应的区域实施上述的移设基板切断步骤，在移设基板3上，如图6(d)所示沿着呈格子状形成的切割道23形成格子状的分割槽31。Under the above-mentioned processing conditions, by carrying out the above-mentioned laser beam irradiation step 4 to 6 times along each scribe line 23, as shown in FIG. 6(c), the substrate 3 and the epitaxial substrate 20 formed on the optical device wafer 2 are transferred. The optical device layer 21 on the surface of the substrate is cut together along the predetermined scribe line 23 to form a dividing groove 31 composed of a laser-processed groove (transfer substrate cutting step). By performing the above-mentioned transfer substrate cutting step on all the regions corresponding to the scribe lines 23, grid-like dividing grooves are formed on the transfer substrate 3 along the scribe lines 23 formed in a grid form as shown in FIG. 31.

通过按以上实施移设基板切断步骤，并将移设基板3与光器件层21一起沿着呈格子状形成的切割道23切断，可消除由于外延基板20和移设基板3的线膨胀系数的差异而产生的发生在由外延基板20和移设基板3构成的接合体上的翘曲。By carrying out the transfer substrate cutting step as above, and cutting the transfer substrate 3 together with the optical device layer 21 along the dicing lines 23 formed in a lattice shape, the difference due to the linear expansion coefficients of the epitaxial substrate 20 and the transfer substrate 3 can be eliminated. Warpage occurs in the bonded body composed of the epitaxial substrate 20 and the transfer substrate 3 due to the difference.

然后，实施将与被实施了上述的移设基板切断步骤的移设基板3接合的光器件晶片2贴附在安装于环状框架上的作为保持部件的切割带上的光器件晶片支撑步骤。即，如图7所示，将与光器件晶片2接合的移设基板3侧贴附在安装于环状框架F上的作为保持部件的切割带T的表面(保持部件贴附步骤)。因此，与贴附在切割带T的表面的移设基板3接合的光器件晶片2的外延基板20的背面20b为上侧。Then, an optical device wafer supporting step of attaching the optical device wafer 2 bonded to the transfer substrate 3 subjected to the transfer substrate cutting step described above to a dicing tape as a holding member attached to the ring frame is carried out. That is, as shown in FIG. 7 , the transfer substrate 3 side bonded to the optical device wafer 2 is attached to the surface of the dicing tape T as a holding member attached to the ring frame F (holding member attaching step). Therefore, the back surface 20b of the epitaxial substrate 20 of the optical device wafer 2 bonded to the transfer substrate 3 attached to the surface of the dicing tape T is on the upper side.

在如上所述实施了光器件晶片支撑步骤之后，实施通过从外延基板20的背面20b侧将聚光点定位于缓冲层22而照射透过外延基板20的激光束来分解缓冲层22的剥离用激光束照射步骤。该剥离用激光束照射步骤使用图8所示的激光加工装置7来实施。图8所示的激光加工装置7具有：工作盘71，其保持被加工物；以及激光束照射单元72，其向被保持在该工作盘71上的被加工物照射激光束。工作盘71构成为吸引保持被加工物，通过未图示的加工进给单元朝图8中由箭头X所示的方向被加工进给，并通过未图示的分度进给单元朝图8中由箭头Y所示的方向被分度进给。上述激光束照射单元72从安装在实质上水平配置的圆筒形状的壳体721的前端的聚光器722照射脉冲激光束。After the optical device wafer supporting step is performed as described above, the peeling process for decomposing the buffer layer 22 by irradiating a laser beam passing through the epitaxial substrate 20 by positioning the light-converging point on the buffer layer 22 from the back surface 20 b side of the epitaxial substrate 20 is performed. Laser beam irradiation step. This delamination laser beam irradiation step is implemented using the laser processing apparatus 7 shown in FIG. 8 . The laser processing device 7 shown in FIG. 8 includes: a work disk 71 holding a workpiece; and a laser beam irradiation unit 72 for irradiating a laser beam to the workpiece held on the work disk 71 . The work table 71 is configured to attract and hold the workpiece, and is processed and fed in the direction indicated by the arrow X in FIG. The direction indicated by the arrow Y in is indexed. The laser beam irradiation unit 72 irradiates pulsed laser beams from a condenser 722 attached to the front end of a substantially horizontally arranged cylindrical housing 721 .

参照图8和图9说明使用上述的激光加工装置7来实施的剥离用激光束照射步骤。为了实施剥离用激光束照射步骤，首先如上述的图8所示，在激光加工装置7的工作盘71上放置被贴附了与上述的光器件晶片2接合的移设基板3的切割带T侧，使未图示的吸引单元进行动作，将光器件晶片2吸引保持在工作盘71上。因此，被保持在工作盘71上的光器件晶片2的外延基板20的背面20b为上侧。另外，在图8中省略示出安装有切割带T的环状框架F，然而环状框架F被保持在配设于工作盘71上的适当的框架保持单元上。The step of irradiating the laser beam for peeling performed using the above-mentioned laser processing device 7 will be described with reference to FIGS. 8 and 9 . In order to implement the laser beam irradiation step for detachment, first, as shown in the above-mentioned FIG. On the side, a suction unit (not shown) is operated to suction and hold the optical device wafer 2 on the work disk 71 . Therefore, the back surface 20b of the epitaxial substrate 20 of the optical device wafer 2 held on the work disk 71 is the upper side. In addition, although the illustration of the ring-shaped frame F to which the cutting tape T is attached is omitted in FIG.

如上所述在工作盘71上吸引保持了与移设基板3接合的光器件晶片2之后，使工作盘71移动到如图9(a)所示激光束照射单元72的聚光器722所在的激光束照射区域，使一端(在图9(a)中左端)定位在激光束照射单元72的聚光器722的正下方。然后，使从聚光器722照射的脉冲激光束的聚光点P如图9(b)所示对准缓冲层22。然后，在使激光束照射单元72进行动作并从聚光器722照射脉冲激光束的同时，使工作盘71朝在图9(a)中由箭头X1所示的方向以预定的加工进给速度移动。然后，当外延基板20的另一端(在图9(c)中右端)到达图9(c)所示激光束照射单元62的聚光器622的照射位置时，停止脉冲激光束的照射，并停止工作盘71的移动(剥离用激光束照射步骤)。对缓冲层22的整面实施该剥离用激光束照射步骤。结果，缓冲层22被分解，由缓冲层22产生的外延基板20和光器件层21的接合功能丧失。After the optical device wafer 2 bonded to the transfer substrate 3 is sucked and held on the work disk 71 as described above, the work disk 71 is moved to where the light collector 722 of the laser beam irradiation unit 72 is located as shown in FIG. 9( a ). The laser beam irradiates the area so that one end (the left end in FIG. 9( a )) is positioned directly below the condenser 722 of the laser beam irradiating unit 72 . Then, the converging point P of the pulsed laser beam irradiated from the concentrator 722 is aligned with the buffer layer 22 as shown in FIG. 9( b ). Then, while the laser beam irradiation unit 72 is operated to irradiate the pulsed laser beam from the light collector 722, the work disk 71 is moved at a predetermined processing feed rate in the direction indicated by the arrow X1 in FIG. 9(a). move. Then, when the other end of the epitaxial substrate 20 (the right end in FIG. 9( c) ) reaches the irradiation position of the light collector 622 of the laser beam irradiation unit 62 shown in FIG. 9( c), the irradiation of the pulsed laser beam is stopped, and The movement of the work disk 71 is stopped (the laser beam irradiation step for peeling). This delamination laser beam irradiation step is performed on the entire surface of the buffer layer 22 . As a result, the buffer layer 22 is decomposed, and the bonding function of the epitaxial substrate 20 and the optical device layer 21 by the buffer layer 22 is lost.

上述剥离用激光束照射步骤中的加工条件例如被设定如下。The processing conditions in the above-mentioned laser beam irradiation step for peeling are set as follows, for example.

光源         ：受激准分子脉冲激光器Light source : Excimer pulsed laser

波长         ：284nmWavelength : 284nm

平均输出     ：0.08WAverage output: 0.08W

重复频率     ：50kHzRepetition frequency : 50kHz

聚光光点直径 ：

Figure BDA0000121251390000091
Focus spot diameter:
Figure BDA0000121251390000091

加工进给速度    ：20mm/秒Processing feed speed : 20mm/sec

在实施上述的剥离用激光束照射步骤时，通过实施上述移设基板切断步骤并将移设基板3沿着呈格子状形成的切割道23切断，可消除由于外延基板20和移设基板3的线膨胀系数的差异而产生的发生在由外延基板20和移设基板3构成的接合体上的翘曲，因而可使从聚光器722照射的脉冲激光束的聚光点P准确定位在缓冲层22上。并且，缓冲层22由氮化镓(GaN)形成，通过激光束的照射被分解为2GaN→2Ga+N2，产生N2气体，给光器件层21带来不良影响，然而由于基板3被分割为各个光器件24，因而通过上述分割槽31排出N2气体，减轻了对光器件层21的不良影响。When performing the above-mentioned step of irradiating the laser beam for peeling off, by performing the above-mentioned transfer substrate cutting step and cutting the transfer substrate 3 along the scribe lines 23 formed in a grid pattern, the gap between the epitaxial substrate 20 and the transfer substrate 3 can be eliminated. The warp that occurs on the bonded body composed of the epitaxial substrate 20 and the transfer substrate 3 due to the difference in linear expansion coefficient can accurately position the converging point P of the pulsed laser beam irradiated from the concentrator 722 in the buffer zone. on layer 22. In addition, the buffer layer 22 is formed of gallium nitride (GaN), and is decomposed into 2GaN→2Ga+N2 by laser beam irradiation, and N2 gas is generated, which adversely affects the optical device layer 21. However, since the substrate 3 is divided into individual For the optical device 24, the N 2 gas is discharged through the above-mentioned dividing groove 31, and the adverse effect on the optical device layer 21 is reduced.

在实施了上述的剥离用激光束照射步骤之后，实施将外延基板20从光器件层21剥离的外延基板剥离步骤。即，与外延基板20和光器件层21接合的缓冲层22通过实施剥离用激光束照射步骤而丧失接合功能，因而如图10所示，外延基板20可从光器件层21容易剥离。结果，贴附在安装于环状框架F上的切割带T的表面上的移设基板3通过实施上述移设基板切断步骤而与光器件层21一起被分割为各个光器件24，因而获得与各自分割的移设基板3接合的光器件24。After performing the laser beam irradiation step for lift-off described above, an epitaxial substrate lift-off step for peeling the epitaxial substrate 20 from the optical device layer 21 is performed. That is, the buffer layer 22 bonded to the epitaxial substrate 20 and the optical device layer 21 loses the bonding function by performing the laser beam irradiation step for peeling off, so that the epitaxial substrate 20 can be easily peeled off from the optical device layer 21 as shown in FIG. 10 . As a result, the transfer substrate 3 attached to the surface of the dicing tape T mounted on the ring frame F is divided into individual optical devices 24 together with the optical device layer 21 by performing the above-mentioned transfer substrate cutting step, thus obtaining the same The optical devices 24 bonded to the substrates 3 that are individually divided are transferred.

Claims (3)

1.一种光器件晶片的加工方法，将光器件晶片中的光器件层转移到移设基板上，该光器件层隔着缓冲层层叠在外延基板的表面上，并在由呈格子状形成的多个切割道划分出的多个区域内形成有光器件，1. A processing method for an optical device wafer, wherein the optical device layer in the optical device wafer is transferred to a transfer substrate, the optical device layer is laminated on the surface of an epitaxial substrate through a buffer layer, and is formed in a lattice shape Optical devices are formed in a plurality of regions divided by a plurality of cutting lines, 该光器件晶片的加工方法的特征在于包括：The processing method of the optical device wafer is characterized in that it comprises: 移设基板接合步骤，使移设基板与在该外延基板的表面上隔着该缓冲层层叠的该光器件层的表面接合；a transfer substrate bonding step, bonding the transfer substrate to the surface of the optical device layer stacked on the surface of the epitaxial substrate via the buffer layer; 移设基板切断步骤，将与该光器件层的表面接合的该移设基板与该光器件层一起沿着该切割道进行切断；The transfer substrate cutting step is to cut the transfer substrate bonded to the surface of the optical device layer together with the optical device layer along the cutting line; 剥离用激光束照射步骤，将被实施了该移设基板切断步骤后的该移设基板贴附在保持部件上，从层叠有接合了该移设基板的该光器件层的该外延基板的背面侧使聚光点定位于该缓冲层而照射透过该外延基板的激光束，从而分解该缓冲层；以及In the step of irradiating the laser beam for detachment, the transfer substrate subjected to the step of cutting the transfer substrate is attached to a holding member, from the back surface of the epitaxial substrate on which the optical device layer bonded to the transfer substrate is laminated. irradiating the laser beam passing through the epitaxial substrate by positioning the focus point on the buffer layer, thereby decomposing the buffer layer; and 外延基板剥离步骤，在实施了该剥离用激光束照射步骤后，从该光器件层剥离该外延基板。In the epitaxial substrate peeling step, the epitaxial substrate is peeled from the optical device layer after the laser beam irradiation step for peeling is performed. 2.根据权利要求1所述的光器件晶片的加工方法，其中，该移设基板切断步骤利用切削刀将该移设基板沿着该切割道进行切断。2 . The method for processing an optical device wafer according to claim 1 , wherein in the step of cutting the transferred substrate, a cutting knife is used to cut the transferred substrate along the dicing line. 3 . 3.根据权利要求1所述的光器件晶片的加工方法，其中，该移设基板切断步骤通过沿着该移设基板的切割道照射激光束来将该移设基板沿着该切割道进行切断。3. The method for processing an optical device wafer according to claim 1, wherein in the step of cutting the transferred substrate, the transferred substrate is cut along the scribe line by irradiating a laser beam along the scribe line of the transferred substrate .
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