WO2020183588A1 - Method for manufacturing electronic device - Google Patents

Method for manufacturing electronic device Download PDF

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Publication number
WO2020183588A1
WO2020183588A1 PCT/JP2019/009803 JP2019009803W WO2020183588A1 WO 2020183588 A1 WO2020183588 A1 WO 2020183588A1 JP 2019009803 W JP2019009803 W JP 2019009803W WO 2020183588 A1 WO2020183588 A1 WO 2020183588A1
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WO
WIPO (PCT)
Prior art keywords
layer
manufacturing
electronic device
peeling
film forming
Prior art date
Application number
PCT/JP2019/009803
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French (fr)
Japanese (ja)
Inventor
克彦 岸本
幸也 西岡
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シャープ株式会社
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Priority to PCT/JP2019/009803 priority Critical patent/WO2020183588A1/en
Publication of WO2020183588A1 publication Critical patent/WO2020183588A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present invention relates to a method for manufacturing an electronic device.
  • a laminate including a resin layer, a TFT layer, a light emitting element layer, etc. is formed on a glass substrate, and laser light is emitted from the back surface of the glass substrate to the lower surface of the resin layer. Irradiate and peel off the glass substrate.
  • the conventional method of peeling the glass substrate from the resin layer by the process of delamination with a laser beam has a problem that a defect (for example, adhesion of carbonized carbonized resin layer) occurs due to the heat of the laser beam.
  • the third film forming step of forming the barrier layer, the fourth film forming step of forming the electronic circuit layer on the upper layer of the barrier layer, and the peeling layer and the resin layer are irradiated with laser light to obtain the above. It includes a peeling step of peeling the resin layer from the mother substrate and the peeling layer.
  • FIG. 3 As a method for manufacturing an electronic device according to an embodiment of the present invention, an electronic device whose plan view is shown in FIG. 3 will be taken as an example, and will be described with reference to FIGS. 1 to 3.
  • “same layer” means that they are formed in the same process (film forming step)
  • “lower layer” means that they are formed in a process prior to the layer to be compared.
  • “upper layer” means that it is formed in a process after the layer to be compared.
  • FIG. 1 is a flowchart showing a manufacturing method of the electronic device of the first embodiment.
  • FIG. 2 is a cross-sectional view showing a configuration example of a display unit of an electronic device.
  • FIG. 3 is a plan view showing a method of manufacturing an electronic device.
  • an organic EL (Electro Luminescence) display device 2 as an electronic device will be described.
  • a plurality of display areas 41 (that is, an organic EL display device 2) are formed on one translucent substrate (mother substrate) 13. ..
  • a release layer AL is formed on the substrate 13 (step S1, first film forming step).
  • the resin layer 12 is formed so as to cover at least a part of the release layer AL (step S2, second film forming step).
  • the barrier layer 3 is formed so as to cover the entire surface of the resin layer 12 (step S3, third film forming step).
  • the electronic circuit layer 4 above the barrier layer 3 is formed (step S4, fourth film forming step).
  • a top emission type light emitting element layer (including a light emitting layer) 5 is formed (step S5).
  • the sealing layer 6 that covers the light emitting element layer is formed (step S6).
  • the laminate 7 is cut out and the top film 14 is attached (step S7).
  • step S8 peeling step
  • step S9 the lower surface film 10 of FIG. 2 is attached to the lower surface of the resin layer 12 (step S9).
  • the laminate including the bottom film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of individual pieces (step S10, dividing step).
  • the functional film 39 is attached to the obtained pieces (step S11).
  • an electronic circuit board for example, an IC chip
  • step S12 is mounted on the non-display area of the individual piece to form an electronic device.
  • step S8 peeling step
  • the substrate 13 and the peeling layer AL peeled from the resin layer 12 can be reused in steps S1 to S7.
  • a glass substrate is used.
  • Diamond-like carbon (sometimes referred to as "DLC") is used for the release layer AL.
  • a CVD method or a sputtering method can be applied as a method for forming the release layer AL.
  • Examples of the material of the resin layer 12 include polyimide and polyamide. Examples of the material of the top film 14 in step S7 include polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • the barrier layer 3 is a layer that prevents foreign substances such as moisture and oxygen from reaching the TFT layer 4 and the light emitting device layer 5 via the resin layer 12, and is, for example, a silicon oxide film or nitride formed by a CVD method. It can be composed of a silicon film, a silicon nitride film, or a laminated film thereof.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE above the inorganic insulating film 16, and an inorganic insulation layer above the gate electrode GE.
  • the thin film transistor (TFT) Tr is configured to include the flattening film 21, the semiconductor film 15, the inorganic insulating film 16, and the gate electrode GE.
  • the semiconductor film 15 is composed of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor.
  • LTPS low temperature polysilicon
  • FIG. 2 the transistor Tr having the semiconductor film 15 as a channel is shown in a top gate structure, but a bottom gate structure may be used (for example, when the TFT channel is an oxide semiconductor).
  • the gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu). It is composed of a single-layer film or a laminated film of a metal containing at least one.
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
  • SiOx silicon oxide
  • SiNx silicon nitride
  • the flattening film (interlayer insulating film) 21 can be made of a coatable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 (for example, the organic light emitting diode layer) has an anode 22 which is a layer above the flattening film 21, an anode edge cover 23 which covers the edge of the anode 22, and an EL (electroluminescence) which is a layer above the anode edge cover 23. )
  • a light emitting element (for example, OLED: organic light emitting diode) including a layer 24 and a cathode 25 above the EL layer 24 and including an island-shaped anode 22, an EL layer 24, and a cathode 25 for each subpixel.
  • the anode edge cover 23 (also referred to as a bank) can be made of a coatable organic material such as polyimide or acrylic.
  • the EL layer 24 is composed of, for example, laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the lower layer side.
  • the light emitting layer is formed in an island shape for each subpixel by a vapor deposition method or an inkjet method, but one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are solid. It may be a common layer of the above, or it may be non-formed.
  • the anode (anode) 22 is composed of, for example, a laminate of ITO (Indium Tin Oxide) on the side in contact with the EL layer 24 and an alloy containing Ag in the lower layer thereof, and has light reflectivity.
  • the cathode 25 can be made of a translucent conductive material such as an MgAg alloy (ultra-thin film).
  • the driving current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24, and the excitons generated thereby fall to the ground state, so that light is emitted. It is released. Since the anode 22 is light-reflecting and the cathode 25 is translucent, the display light DL emitted from the EL layer 24 faces upward and becomes top emission.
  • the light emitting element layer 5 is not limited to the case of forming an OLED element, and may be formed of an inorganic micro light emitting diode (micro LED) or a quantum dot light emitting diode.
  • the sealing layer 6 is translucent, and has an inorganic sealing film 26 covering the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 covering the organic sealing film 27. And include.
  • the sealing layer 6 covering the light emitting element layer 5 prevents foreign matter such as water and oxygen from penetrating into the light emitting element layer 5.
  • Each of the inorganic sealing films 26 and 28 can be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon nitride film, or a laminated film thereof formed by a CVD method.
  • the organic sealing film 27 is a translucent organic film and can be made of a coatable organic material such as acrylic.
  • the bottom film 10 is for realizing a display device having excellent flexibility by sticking it to the bottom surface of the resin layer 12 after peeling off the support substrate, and examples of the material thereof include PET.
  • the functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
  • step S1 first film formation step of FIG. 1
  • a release layer AL is formed on the substrate 13.
  • the display region 41 which will be described later, is formed so as to be laminated on the release layer AL.
  • step S2 (second film formation step) of FIG. 1
  • the resin layer 12 is formed so as to cover at least a part of the release layer AL.
  • the resin layer 12 is a portion that comes into contact with the substrate 13 and exists around a portion that contacts the release layer AL and a portion that contacts the release layer AL. And.
  • step S3 third film forming step of FIG. 1
  • the barrier layer 3 is formed so as to cover the upper surface and the end surface of the resin layer 12. As a result, it is possible to prevent water from penetrating into the resin layer 12, and it is possible to solve the problem that the release layer AL and the resin layer 12 are (unintentionally) separated by the step S8. ..
  • an electronic circuit layer is formed on the upper layer of the barrier layer 3.
  • the electronic circuit layer may be a TFT layer or a touch panel layer.
  • the electronic circuit layer is a touch panel layer, it is not necessary to form the light emitting element layer 5 and the sealing layer 6 on the upper layer.
  • step S8 peeling step of FIG. 1
  • the substrate 13 and the peeling layer AL are peeled from the resin layer 12 by irradiating light LV from the lower surface of the substrate 13.
  • Diamond-like carbon is used for the release layer AL.
  • DLC is an amorphous hard film mainly composed of hydrocarbons or allotropes of carbon. DLC can exhibit various properties by adjusting the ratio of the contained crystalline electron orbitals (sp3 bond, sp2 bond) and the hydrogen (H) content.
  • DLC has a significantly lower thermal conductivity than amorphous silicon, W, Cr, Mo, etc., which have been conventionally used as a release layer for laser lift-off. Specifically, it is as follows (unit: W / mK, 0 ° C.). DLC (0.2 to 30), amorphous silicon (100 to 150), W (177.0), Cr (96.5), Mo (139.0), Al (236), Co (105), Ni ( 94), Ti (22).
  • the conventional release layer (amorphous silicon layer or metal layer such as W, Cr, Mo) has high thermal conductivity, it is formed on the upper part of the resin layer 12 by the heat of the optical LV irradiated from the lower surface of the substrate 13. There is a possibility that the characteristics of the TFT layer 4 or the light emitting element layer 5 may deteriorate. However, since the DLC has a low thermal conductivity, it is possible to suppress the thermal effect of the light LV emitted from the lower surface of the substrate 13 on the TFT layer 4 or the light emitting element layer 5.
  • DLC has a higher hardness than amorphous silicon or W, Cr, Mo, etc., and is less likely to be scratched. Therefore, when DLC is used for the release layer AL, the release layer AL and the substrate 13 are not easily scratched. Therefore, such a release layer AL and the substrate 13 can be reused.
  • the release layer AL using DLC can be formed by, for example, a CVD method or a sputtering method.
  • the release layer AL is formed by the CVD method
  • the raw material gas is a hydrocarbon
  • the release layer AL contains hydrogen.
  • the resin layer 12 coefficient of thermal expansion: 10 to 20 ⁇ 10-6
  • the release layer AL coefficient of thermal expansion: 2 ⁇ 10 ⁇
  • the difference in the coefficient of thermal expansion in 6 ) and / or the peeling due to the separation of hydrogen from the peeling layer AL can be considered.
  • DLC has various types.
  • hydrogen-free "ta-C” Tetrahedral Amorphous Carbon: tetrahedral amorphous carbon
  • a-C: H hydrogen containing hydrogen
  • hydrogenated Amorphous Carbon: hydrogenated amorphous carbon hydrogenated amorphous carbon
  • ta-C does not contain hydrogen and has a relatively large proportion of carbon in the sp3 hybrid orbital (diamond structure) (so-called hydrogen-free DLC). Therefore, ta-C can be suitably used for the release layer AL.
  • a-C: H contains hydrogen and has a relatively large proportion of carbon in the sp2 hybrid orbital (graphite structure).
  • a-C: H is suitably used for delamination due to hydrogen desorption.
  • ta-C: H hydrogenated Tetrahedral Amorphous Carbon
  • All of the above-mentioned DLCs are suitable for reuse, but among them, the hydrogen-free "ta-C” has a particularly high hardness, so that it can be reused for a long period of time.
  • the release layer AL When the release layer AL is irradiated with light LV, the binding force between the resin layer 12 and the release layer AL is reduced by the above-mentioned mechanism, and the substrate 13 and the release layer AL can be easily separated from the resin layer 12.
  • the resin layer 12 when the resin layer 12 is irradiated with light LV, the resin layer 12 is burned by the heat of the light LV, the bonding force between the substrate 13 and the resin layer 12 is reduced, and the substrate 13 is easily peeled from the resin layer 12.
  • the resin layer 12 is not directly irradiated with light LV, and heat is not applied to the resin layer 12. Therefore, at the location where the resin layer 12 and the release layer AL come into contact with each other, it is possible to suppress the generation of carbides in the resin layer 12 due to light LV and the generation of traces of the resin layer 12 due to light LV. Then, by reducing the generation of traces or the generation of carbides due to the irradiation of the light LV, the visibility is improved in the display region at the position where the peeling layer AL is superimposed. Therefore, in the resin layer 12, the release layer AL is formed in a place where good visibility is required, such as the display area 41.
  • the release layer AL is provided in the present embodiment, unlike the conventional example, it is possible to prevent the occurrence of defects in the above-mentioned delamination process and improve the yield in the manufacture of electronic devices. Can be done.
  • the release layer AL is formed of diamond-like carbon. As a result, the thermal influence on the TFT layer 4 or the light emitting element layer 5 can be suppressed, and the release layer AL and the substrate 13 using the DLC can be reused.
  • the optical LV is preferably laser light.
  • the device for irradiating the laser beam may be, for example, an excimer laser irradiation device using XeCl gas or the like, a solid-state laser irradiation device using YAG (Yttrium Aluminum Garnet) or the like.
  • YAG Yttrium Aluminum Garnet
  • the residue of the resin layer 12 can be suppressed by inserting the release layer AL between the substrate 13 and the resin layer 12, the effect of using the release layer AL when using a solid-state laser light such as a YAG laser light is effective. Becomes larger.
  • step S9 of FIG. 1 the lower surface film 10 is attached to the resin layer 12.
  • the difference in the thickness of the resin layer 12 in the stacking direction between the portion where the release layer AL and the substrate 13 are peeled off and the portion where only the substrate 13 is peeled off.
  • the difference in the thickness of the resin layer 12 in the laminating direction is smaller than the thickness of the lower surface film 10 in the laminating direction, the difference in the thickness in the laminating direction is eliminated by attaching the lower surface film 10.
  • step S10 dividing step of FIG. 1
  • the laminated body 7 including the barrier layer 3, the resin layer 12, and the substrate 13 is cut in the thickness direction of the laminated body 7 so as to pass through the end portion of the resin layer 12.
  • the end faces of the barrier layer 3 and the resin layer 12 become flush with each other.
  • FIG. 4 is a plan view showing a modified example of the method for manufacturing the electronic device of the first embodiment.
  • a metal film 17 may be provided between the substrate 13 and the release layer AL.
  • the metal film 17 is formed of, for example, Ti, Mo, Ni, or the like, and has a film thickness of about 100 nm.
  • the following effects can be expected by providing the metal film 17 between the substrate 13 and the release layer AL.
  • the release layer AL is formed by the CVD method, the adhesion between the substrate 13 and the release layer AL can be improved. Therefore, the release layer AL does not separate from the substrate 13 even when it is repeatedly reused, and it can be used for a long period of time. For this reason, when a DLC composed of a-C: H or ta-C: H containing hydrogen formed by the CVD method is used for the release layer AL, it is preferable to provide the metal film 17.
  • the release layer AL when the release layer AL is formed by the sputtering method, the release layer AL having good adhesion to the substrate 13 can be formed without providing the metal film 17, so that the substrate 13 with the release layer 13 can be formed. Suitable for reuse. In this case as well, the provision of the metal layer 17 can be expected to further improve the adhesion.
  • the substrate 13 may be cut into strips, and the substrate 13 may be cut into a desired size (step S25). Then, after cutting, the substrate 13 is peeled off (step S26).
  • the resin layer 12 is forcibly pulled when the substrate 13 is peeled from the resin layer 12, and defects such as tearing of the resin layer 12 may occur. ..
  • the resin layer 12 can come into contact with air and contain water. As a result, the adhesion between the resin layer 12 and the substrate 13 is lowered. As a result, even when an unreasonable tensile stress is generated in the resin layer 12 in a region where the substrate 13 cannot be irradiated with the laser beam, it is possible to prevent the resin layer 12 from being broken or other defects.
  • FIG. 8 shows a case where the release layer AL is not formed in the display region 41.
  • the release layer AL may be formed in the display area 41.
  • a terminal portion (not shown) is formed which is connected to the wiring provided in the electronic circuit layer and inputs a signal from the outside. Further, in the terminal portion, the wiring and the wiring for transmitting the electric signal are connected to a plurality of terminals provided in the terminal portion.
  • the release layer AL may be provided in the terminal region 43.
  • the release layer AL in the terminal region 43, it is possible to suppress a decrease in readability of the alignment marker 44 due to the generation of carbides and laser traces of the resin layer 12 on the alignment marker 44.
  • the alignment with the mounting terminal can be easily performed, so that mounting defects can be suppressed or the mounting process can be simplified. As a result, the cost of mounting the mounting terminal can be reduced.
  • the touch panel TP includes a touch panel unit TP1 and a terminal area 43.
  • the touch panel unit TP1 is a portion placed on the display surface of the organic EL display device 2 and actually has a touch panel function (in other words, a portion that accepts a user's operation). Further, in the touch panel TP, since the terminal region 43 in which the wiring connecting to each electrode is formed is outside the display region, it is not necessary to provide the release layer AL in the terminal region 43.
  • FIG. 11 is a plan view showing a method of manufacturing the display device of the third embodiment
  • FIG. 12 is a cross-sectional view showing the method of manufacturing the display device of the third embodiment.
  • the substrate was peeled off after being divided (step S25) (step 26).
  • step S8 after the substrate is peeled off (step S8), it may be divided (step S10).
  • the release layer AL is formed on the large-sized substrate 13, and the island-shaped first portion 12a (is formed on the release layer AL.
  • a resin layer 12 including a first display region 41a) and an island-shaped second portion 12b (corresponding to a second display region 41b) is formed.
  • a common barrier layer 3 is formed so as to cover the first part 12a and the second part 12b, and then a TFT layer including a region 4a overlapping the first part 12a and a region 4b overlapping the second part 12b is formed. ..
  • a light emitting element layer including a region 5a overlapping the first part 12a and a region 5b overlapping the second part 12b is formed, and a sealing layer 6 covering the light emitting element layer is formed.
  • a top film is formed on the first laminated body 7A including the first portion 12a and the barrier layer 3 on the divided substrate 13a and the second laminated body 7B including the second portion 12b and the barrier layer 3 on the divided substrate 13b.
  • the first laminated body 7A is cut in the thickness direction so as to pass through the end portion of the first portion 12a, and the second laminated body 7B is cut into the second laminated body 7B.
  • a cutting step of cutting in the thickness direction so as to pass through the end portion of the second portion 12b is performed.
  • the release layer AL located below each of the first laminated body 7A and the second laminated body 7B is irradiated with light LV, and the first portion 12a is divided. It is peeled off from the substrate 13a, and the second part 12b is peeled off from the divided substrate 13b.
  • the laminated body 7A attached to the divided substrate 13a (glass substrate) and the laminated body 7B attached to the divided substrate 13b (glass substrate) can be separately transported and stored.
  • the laminated bodies 7A and 7B are much easier to transport and store than the laminated body in a state of being peeled off from the glass substrate (flexible state).
  • the barrier layer 3 covers the upper surfaces and end faces of the first portion 12a and the second portion 12b of the resin layer, foreign matter such as moisture is contained in the resin layers 12a and 12b. It is possible to prevent permeation, and there is a problem that the peeling layer AL and the first part 12a or the second part 12b of the resin layer are (unintentionally) separated by the step S8 (peeling step). It can be resolved. For example, it is possible to prevent an accident in which the first portion 12a of the resin layer is peeled off from the peeling layer AL and the laminated body 7A is dropped and damaged during the transportation work of the laminated body 7A.
  • the resin layer 12 is separated and formed into two parts, the first part 12a and the second part 12b, but the present invention is not limited to this, and the resin layer 12 may be divided into three or more parts. Further, in steps S4 to S6, a device corresponding to a plurality of panels is formed on the first part 12a, and a device corresponding to the plurality of panels is formed on the second part 12b, and in step S10, the laminated body 7A is formed. And a plurality of electronic devices (flexible panels) may be obtained from each of the laminated body 7B. Further, the first display area 41a and the second display area 41b may be further divided into a plurality of display areas.
  • the top emission type organic EL display device (OLED) 2 is described as an example of the electronic device, but the present invention is not limited to this.
  • OLED organic EL display device
  • the resin layer 12 is made of transparent polyimide
  • the anode 22 is made of a translucent conductor
  • the cathode 25 is made of a light-reflecting conductor.
  • the lower surface of the resin layer 12 is less likely to deteriorate in the peeling step, it can be said that it is also suitable for a display device having a bottom emission type OLED in which the display light passes through the lower surface of the resin layer 12.
  • each of the above embodiments can be applied to the flexible liquid crystal display device shown in FIG. 13 (b).
  • a flexible backlight unit 50 is arranged on the back surface of the resin layer 12, the resin layer 12 is made of transparent polyimide, a pixel electrode PE is formed on the TFT layer 4, and the pixel electrode PE is flexible.
  • a liquid crystal layer 35 that functions as a shutter is arranged between the plastic facing substrate 37 (color filter substrate).
  • the lower surface of the resin layer 12 is less likely to deteriorate in the peeling step, it can be said that it is also suitable for a liquid crystal display device in which the display light DL (backlight light) passes through the lower surface of the resin layer 12.
  • the electro-optical element included in the electronic device according to the present embodiment is not particularly limited.
  • the display device according to the present embodiment include an organic EL display provided with an OLED (Organic Light Emitting Diode) as an electro-optical element, an inorganic EL display provided with an inorganic light emitting diode as an electro-optical element, and electro-optical.
  • the element include a QLED display provided with a QLED (Quantum dot Light Emitting Diode).
  • the present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. Further, new technical features can be formed by combining the technical means disclosed in each embodiment.
  • a method of manufacturing an electronic device including.
  • a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included.
  • Mode 4 The method for manufacturing an electronic device according to, for example, mode 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminate.
  • a resin layer containing an island-shaped first portion and an island-shaped second portion is formed.
  • a common barrier layer covering the first part and the second part is formed.
  • the electronic circuit layer including the region overlapping the first portion and the region overlapping the second portion is formed.
  • the barrier layer and the peeling layer come into contact with each other on the outer side of the first part and the second part in a plan view.
  • the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part.
  • the second laminated body including the second part and the barrier layer is cut in the thickness direction of the second laminated body so that the end portion of the second part passes through, for example, the mode 7. How to manufacture electronic devices.

Abstract

A method for manufacturing an electronic device, wherein: an island-shaped release layer (AL) is formed upon a substrate (13); a resin layer (12) is laminated thereupon so as to cover the entire surface of the release layer (AL); a barrier layer (3) is formed so as to cover the resin layer (12); an electronic circuit is formed upon the barrier layer (3); and the resin layer (12) is peeled off the substrate (13) and the release layer (AL).

Description

電子デバイスの製造方法Manufacturing method of electronic device
　本発明は、電子デバイスの製造方法に関する。 The present invention relates to a method for manufacturing an electronic device.
　可撓性を有する電子デバイスを製造する場合、例えば、ガラス基板上に、樹脂層、ＴＦＴ層、発光素子層等を含む積層体を形成し、ガラス基板の裏面から樹脂層の下面にレーザ光を照射してガラス基板を剥離する。 When manufacturing a flexible electronic device, for example, a laminate including a resin layer, a TFT layer, a light emitting element layer, etc. is formed on a glass substrate, and laser light is emitted from the back surface of the glass substrate to the lower surface of the resin layer. Irradiate and peel off the glass substrate.
特開２００４－３４９５４３号公報（２００４年１２月９日公開）Japanese Unexamined Patent Publication No. 2004-349543 (published on December 9, 2004)
　レーザ光によるデラミネーションの工程によって樹脂層からガラス基板を剥離する前記従来の手法では、レーザ光の熱により不具合（例えば樹脂層が炭化した炭化物の付着等）が発生するという問題がある。 The conventional method of peeling the glass substrate from the resin layer by the process of delamination with a laser beam has a problem that a defect (for example, adhesion of carbonized carbonized resin layer) occurs due to the heat of the laser beam.
　母基板上に島状の剥離層を形成する第１成膜工程と、前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、前記バリア層の上層に電子回路層を形成する第４成膜工程と、前記剥離層および前記樹脂層に対して、レーザ光を照射し、前記母基板および前記剥離層から前記樹脂層を剥離する剥離工程と、を含む。 A first film forming step of forming an island-shaped peeling layer on a mother substrate, a second film forming step of laminating resin layers so as to cover at least a part of the peeling layer, and covering the resin layer. The third film forming step of forming the barrier layer, the fourth film forming step of forming the electronic circuit layer on the upper layer of the barrier layer, and the peeling layer and the resin layer are irradiated with laser light to obtain the above. It includes a peeling step of peeling the resin layer from the mother substrate and the peeling layer.
　上述のデラミネーションの工程での不具合の発生を防ぐことが可能な電子デバイスの製造方法を提供する。 Provided is a method for manufacturing an electronic device capable of preventing the occurrence of defects in the above-mentioned delamination process.
ＯＬＥＤパネルの製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of an OLED panel. ＯＬＥＤパネルの構成を示す断面図である。It is sectional drawing which shows the structure of an OLED panel. 実施形態１の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 1. FIG. 実施形態１の電子デバイスの製造方法の一変形例を示す平面図である。It is a top view which shows one modification of the manufacturing method of the electronic device of Embodiment 1. FIG. 実施形態１の変形例の電子デバイスの製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態１の変形例の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態１の変形例の電子デバイスの製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態２の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 2. 実施形態２の変形例の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 2. 実施形態２の変形例の電子デバイスの表示部の別構成を示す断面図である。It is sectional drawing which shows another structure of the display part of the electronic device of the modification of Embodiment 2. 実施形態３の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 3. 実施形態３の電子デバイスの製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the electronic device of Embodiment 3. 電子デバイスの表示部の別構成を示す断面図である。It is sectional drawing which shows another structure of the display part of an electronic device.
　〔実施形態１〕
　本発明の一実施の形態に係る電子デバイスの製造方法として、図３に平面図を示す電子デバイスを例にとり、図１～３を参照し説明する。以下においては、「同層」とは同一のプロセス（成膜工程）にて形成されていることを意味し、「下層」とは、比較対象の層よりも先のプロセスで形成されていることを意味し、「上層」とは比較対象の層よりも後のプロセスで形成されていることを意味する。 [Embodiment 1]
As a method for manufacturing an electronic device according to an embodiment of the present invention, an electronic device whose plan view is shown in FIG. 3 will be taken as an example, and will be described with reference to FIGS. 1 to 3. In the following, "same layer" means that they are formed in the same process (film forming step), and "lower layer" means that they are formed in a process prior to the layer to be compared. And "upper layer" means that it is formed in a process after the layer to be compared.
　図１は、実施形態１の電子デバイスの製造方法を示すフローチャートである。図２は電子デバイスの表示部の構成例を示す断面図である。図３は、電子デバイスの製造方法を示す平面図である。なお、以下の説明では、電子デバイスとしての有機ＥＬ（Electro Luminescence：エレクトロルミネッセンス）表示装置２を製造する場合について説明する。 FIG. 1 is a flowchart showing a manufacturing method of the electronic device of the first embodiment. FIG. 2 is a cross-sectional view showing a configuration example of a display unit of an electronic device. FIG. 3 is a plan view showing a method of manufacturing an electronic device. In the following description, a case of manufacturing an organic EL (Electro Luminescence) display device 2 as an electronic device will be described.
　実施形態１に係る電子デバイスは、図３に示すように、１枚の透光性を備えた基板（母基板）１３に複数の表示領域４１（つまり、有機ＥＬ表示装置２）が形成される。 In the electronic device according to the first embodiment, as shown in FIG. 3, a plurality of display areas 41 (that is, an organic EL display device 2) are formed on one translucent substrate (mother substrate) 13. ..
　実施形態１に係る電子デバイスの製造方法は、図1に示すように、まず、基板１３に剥離層ＡＬを形成する（ステップＳ１、第１成膜工程）。次いで、剥離層ＡＬの少なくとも一部を覆うように樹脂層１２を形成する（ステップＳ２、第２成膜工程）。次いで、樹脂層１２の全面を覆うように、バリア層３を形成する（ステップＳ３、第３成膜工程）。次いで、バリア層３よりも上層の電子回路層４を形成する（ステップＳ４、第４成膜工程）。次いで、トップエミッション型の発光素子層（発光層を含む）５を形成する（ステップＳ５）。次いで、発光素子層を覆う封止層６を形成する（ステップＳ６）。次いで、積層体７の切り出しおよび上面フィルム１４の貼り付けを行う（ステップＳ７）。 In the method for manufacturing an electronic device according to the first embodiment, as shown in FIG. 1, first, a release layer AL is formed on the substrate 13 (step S1, first film forming step). Next, the resin layer 12 is formed so as to cover at least a part of the release layer AL (step S2, second film forming step). Next, the barrier layer 3 is formed so as to cover the entire surface of the resin layer 12 (step S3, third film forming step). Next, the electronic circuit layer 4 above the barrier layer 3 is formed (step S4, fourth film forming step). Next, a top emission type light emitting element layer (including a light emitting layer) 5 is formed (step S5). Next, the sealing layer 6 that covers the light emitting element layer is formed (step S6). Next, the laminate 7 is cut out and the top film 14 is attached (step S7).
　次いで、基板１３越しに剥離層ＡＬまたは樹脂層１２に光ＬＶを照射し、樹脂層１２から基板１３および剥離層ＡＬを剥離する（ステップＳ８、剥離工程）。 Next, the release layer AL or the resin layer 12 is irradiated with light LV through the substrate 13 to separate the substrate 13 and the release layer AL from the resin layer 12 (step S8, peeling step).
　次いで、樹脂層１２の下面に、図２の下面フィルム１０を貼り付ける（ステップＳ９）。次いで、下面フィルム１０、樹脂層１２、バリア層３、ＴＦＴ層４、発光素子層５、封止層６を含む積層体を分断し、複数の個片を得る（ステップＳ１０、分断工程）。次いで、得られた個片に機能フィルム３９を貼り付ける（ステップＳ１１）。次いで、個片の非表示領域に電子回路基板（例えば、ＩＣチップ）をマウントして電子デバイスとする（ステップＳ１２）。なお、前記各ステップは、後述の電子デバイス製造装置が行う。また、後述するが、ステップＳ８（剥離工程）の後に、樹脂層１２から剥離された基板１３および剥離層ＡＬをステップＳ１～Ｓ７に再利用することもできる。 Next, the lower surface film 10 of FIG. 2 is attached to the lower surface of the resin layer 12 (step S9). Next, the laminate including the bottom film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of individual pieces (step S10, dividing step). Next, the functional film 39 is attached to the obtained pieces (step S11). Next, an electronic circuit board (for example, an IC chip) is mounted on the non-display area of the individual piece to form an electronic device (step S12). Each of the above steps is performed by an electronic device manufacturing apparatus described later. Further, as will be described later, after step S8 (peeling step), the substrate 13 and the peeling layer AL peeled from the resin layer 12 can be reused in steps S1 to S7.
　基板１３には、例えばガラス基板が用いられる。剥離層ＡＬにはダイヤモンドライクカーボン（「ＤＬＣ」と称する場合もある）が使用される。剥離層ＡＬの成膜方法としては、ＣＶＤ法またはスパッタリング法を適用することができる。 For the substrate 13, for example, a glass substrate is used. Diamond-like carbon (sometimes referred to as "DLC") is used for the release layer AL. As a method for forming the release layer AL, a CVD method or a sputtering method can be applied.
　樹脂層１２の材料としては、例えば、ポリイミド、ポリアミド等が挙げられる。ステップＳ７の上面フィルム１４の材料としては、例えばポリエチレンテレフタレート（ＰＥＴ）が挙げられる。 Examples of the material of the resin layer 12 include polyimide and polyamide. Examples of the material of the top film 14 in step S7 include polyethylene terephthalate (PET).
　バリア層３は、水分、酸素等の異物が樹脂層１２を介してＴＦＴ層４や発光素子層５に到達することを防ぐ層であり、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。 The barrier layer 3 is a layer that prevents foreign substances such as moisture and oxygen from reaching the TFT layer 4 and the light emitting device layer 5 via the resin layer 12, and is, for example, a silicon oxide film or nitride formed by a CVD method. It can be composed of a silicon film, a silicon nitride film, or a laminated film thereof.
　ＴＦＴ層４は、半導体膜１５と、半導体膜１５よりも上層の無機絶縁膜１６（ゲート絶縁膜）と、無機絶縁膜１６よりも上層のゲート電極ＧＥと、ゲート電極ＧＥよりも上層の無機絶縁膜１８と、無機絶縁膜１８よりも上層の容量電極ＣＥと、容量電極ＣＥよりも上層の無機絶縁膜２０と、無機絶縁膜２０よりも上層のソース配線ＳＨと、ソース配線ＳＨよりも上層の平坦化膜２１とを含み、半導体膜１５、無機絶縁膜１６、およびゲート電極ＧＥを含むように薄層トランジスタ（ＴＦＴ）Ｔｒが構成される。 The TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE above the inorganic insulating film 16, and an inorganic insulation layer above the gate electrode GE. The film 18, the capacitive electrode CE above the inorganic insulating film 18, the inorganic insulating film 20 above the capacitive electrode CE, the source wiring SH above the inorganic insulating film 20, and the upper layer above the source wiring SH. The thin film transistor (TFT) Tr is configured to include the flattening film 21, the semiconductor film 15, the inorganic insulating film 16, and the gate electrode GE.
　半導体膜１５は、例えば低温ポリシリコン（ＬＴＰＳ）あるいは酸化物半導体で構成される。なお、図２では、半導体膜１５をチャネルとするトランジスタＴｒがトップゲート構造で示されているが、ボトムゲート構造でもよい（例えば、ＴＦＴのチャネルが酸化物半導体の場合）。 The semiconductor film 15 is composed of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor. In FIG. 2, the transistor Tr having the semiconductor film 15 as a channel is shown in a top gate structure, but a bottom gate structure may be used (for example, when the TFT channel is an oxide semiconductor).
　ゲート電極ＧＥ、容量電極ＣＥ、ソース配線ＳＨは、例えば、アルミニウム（Ａｌ）、タングステン（Ｗ）、モリブデン（Ｍｏ）、タンタル（Ｔａ）、クロム（Ｃｒ）、チタン（Ｔｉ）、銅（Ｃｕ）の少なくとも１つを含む金属の単層膜あるいは積層膜によって構成される。 The gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu). It is composed of a single-layer film or a laminated film of a metal containing at least one.
　無機絶縁膜１６・１８・２０は、例えば、ＣＶＤ法によって形成された、酸化シリコン（ＳｉＯｘ）膜あるいは窒化シリコン（ＳｉＮｘ）膜またはこれらの積層膜によって構成することができる。 The inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
　平坦化膜（層間絶縁膜）２１は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The flattening film (interlayer insulating film) 21 can be made of a coatable organic material such as polyimide or acrylic.
　発光素子層５（例えば、有機発光ダイオード層）は、平坦化膜２１よりも上層のアノード２２と、アノード２２のエッジを覆うアノードエッジカバー２３と、アノードエッジカバー２３よりも上層のＥＬ（エレクトロルミネッセンス）層２４と、ＥＬ層２４よりも上層のカソード２５とを含み、サブピクセルごとに、島状のアノード２２、ＥＬ層２４、およびカソード２５を含む発光素子（例えば、ＯＬＥＤ：有機発光ダイオード）と、これを駆動するサブ画素回路とが設けられる。アノードエッジカバー２３（バンクとも称する）は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The light emitting element layer 5 (for example, the organic light emitting diode layer) has an anode 22 which is a layer above the flattening film 21, an anode edge cover 23 which covers the edge of the anode 22, and an EL (electroluminescence) which is a layer above the anode edge cover 23. ) A light emitting element (for example, OLED: organic light emitting diode) including a layer 24 and a cathode 25 above the EL layer 24 and including an island-shaped anode 22, an EL layer 24, and a cathode 25 for each subpixel. , A sub-pixel circuit for driving this is provided. The anode edge cover 23 (also referred to as a bank) can be made of a coatable organic material such as polyimide or acrylic.
　ＥＬ層２４は、例えば、下層側から順に、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層を積層することで構成される。発光層は、蒸着法あるいはインクジェット法によって、サブピクセルごとに島状に形成されるが、正孔注入層、正孔輸送層、電子輸送層、電子注入層の１以上の層については、ベタ状の共通層とすることもあるし、非形成とすることもある。 The EL layer 24 is composed of, for example, laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order from the lower layer side. The light emitting layer is formed in an island shape for each subpixel by a vapor deposition method or an inkjet method, but one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are solid. It may be a common layer of the above, or it may be non-formed.
　アノード（陽極）２２は、例えば、ＥＬ層２４に接する側のＩＴＯ（Indium Tin Oxide）と、その下層のＡｇを含む合金との積層によって構成され、光反射性を有する。カソード２５は、ＭｇＡｇ合金（極薄膜）等の透光性の導電材で構成することができる。 The anode (anode) 22 is composed of, for example, a laminate of ITO (Indium Tin Oxide) on the side in contact with the EL layer 24 and an alloy containing Ag in the lower layer thereof, and has light reflectivity. The cathode 25 can be made of a translucent conductive material such as an MgAg alloy (ultra-thin film).
　発光素子層５がＯＬＥＤ層である場合、アノード２２およびカソード２５間の駆動電流によって正孔と電子がＥＬ層２４内で再結合し、これによって生じたエキシトンが基底状態に落ちることによって、光が放出される。アノード２２が光反射性であり、カソード２５が透光性であるため、ＥＬ層２４から放出された表示光ＤＬは上方に向かい、トップエミッションとなる。 When the light emitting element layer 5 is an OLED layer, the driving current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24, and the excitons generated thereby fall to the ground state, so that light is emitted. It is released. Since the anode 22 is light-reflecting and the cathode 25 is translucent, the display light DL emitted from the EL layer 24 faces upward and becomes top emission.
　発光素子層５は、ＯＬＥＤ素子を構成する場合に限られず、無機のマイクロ発光ダイオード（マイクロＬＥＤ）、あるいは量子ドット発光ダイオードを構成してもよい。 The light emitting element layer 5 is not limited to the case of forming an OLED element, and may be formed of an inorganic micro light emitting diode (micro LED) or a quantum dot light emitting diode.
　封止層６は透光性であり、カソード２５を覆う無機封止膜２６と、無機封止膜２６よりも上層の有機封止膜２７と、有機封止膜２７を覆う無機封止膜２８とを含む。発光素子層５を覆う封止層６は、水、酸素等の異物の発光素子層５への浸透を防いでいる。 The sealing layer 6 is translucent, and has an inorganic sealing film 26 covering the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 covering the organic sealing film 27. And include. The sealing layer 6 covering the light emitting element layer 5 prevents foreign matter such as water and oxygen from penetrating into the light emitting element layer 5.
　無機封止膜２６・２８はそれぞれ、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。有機封止膜２７は、透光性有機膜であり、アクリル等の塗布可能な有機材料によって構成することができる。 Each of the inorganic sealing films 26 and 28 can be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon nitride film, or a laminated film thereof formed by a CVD method. The organic sealing film 27 is a translucent organic film and can be made of a coatable organic material such as acrylic.
　下面フィルム１０は、支持基板を剥離した後に樹脂層１２の下面に貼り付けることで、柔軟性に優れた表示デバイスを実現するためのものであり、その材料としては、ＰＥＴ等が挙げられる。機能フィルム３９は、例えば、光学補償機能、タッチセンサ機能、保護機能等を有する。 The bottom film 10 is for realizing a display device having excellent flexibility by sticking it to the bottom surface of the resin layer 12 after peeling off the support substrate, and examples of the material thereof include PET. The functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
　図１のステップＳ１（第１成膜工程）では、基板１３上に剥離層ＡＬを形成する。なお、後述する表示領域４１は、剥離層ＡＬに積層するように形成する。 In step S1 (first film formation step) of FIG. 1, a release layer AL is formed on the substrate 13. The display region 41, which will be described later, is formed so as to be laminated on the release layer AL.
　図１のステップＳ２（第２成膜工程）では、剥離層ＡＬの少なくとも一部を覆うように、樹脂層１２を形成する。剥離層ＡＬの少なくとも一部を樹脂層１２にて覆うことにより、樹脂層１２は、剥離層ＡＬに接触する部位と、剥離層ＡＬに接触する部位の周囲に存在する、基板１３に接触する部位と、を備える。 In step S2 (second film formation step) of FIG. 1, the resin layer 12 is formed so as to cover at least a part of the release layer AL. By covering at least a part of the release layer AL with the resin layer 12, the resin layer 12 is a portion that comes into contact with the substrate 13 and exists around a portion that contacts the release layer AL and a portion that contacts the release layer AL. And.
　図１のステップＳ３（第３成膜工程）では、樹脂層１２の上面および端面を覆うようにバリア層３を形成する。これにより、樹脂層１２に水分が浸透することを防ぐことができ、ステップＳ８までの間に剥離層ＡＬと樹脂層１２とが（意図せず）分離してしまうという問題を解消することができる。 In step S3 (third film forming step) of FIG. 1, the barrier layer 3 is formed so as to cover the upper surface and the end surface of the resin layer 12. As a result, it is possible to prevent water from penetrating into the resin layer 12, and it is possible to solve the problem that the release layer AL and the resin layer 12 are (unintentionally) separated by the step S8. ..
　図１のステップＳ４（第４成膜工程）では、バリア層３の上層に電子回路層を形成する。電子回路層は、ＴＦＴ層であってよく、タッチパネル層であってよい。なお、電子回路層がタッチパネル層である場合には、その上層に発光素子層５および封止層６を形成する必要はない。 In step S4 (fourth film formation step) of FIG. 1, an electronic circuit layer is formed on the upper layer of the barrier layer 3. The electronic circuit layer may be a TFT layer or a touch panel layer. When the electronic circuit layer is a touch panel layer, it is not necessary to form the light emitting element layer 5 and the sealing layer 6 on the upper layer.
　図１のステップＳ８（剥離工程）では、基板１３の下面から光ＬＶを照射することにより樹脂層１２から基板１３および剥離層ＡＬを剥離する。 In step S8 (peeling step) of FIG. 1, the substrate 13 and the peeling layer AL are peeled from the resin layer 12 by irradiating light LV from the lower surface of the substrate 13.
　剥離層ＡＬにはダイヤモンドライクカーボン（ＤＬＣ）が使用される。ＤＬＣは、主として炭化水素あるいは炭素の同素体からなる非晶質（アモルファス）の硬質膜である。ＤＬＣは、含まれる結晶質の電子軌道（ｓｐ３結合、ｓｐ２結合）の比率、および水素（Ｈ）含有量を調整することによって種々の性質を発現することができる。 Diamond-like carbon (DLC) is used for the release layer AL. DLC is an amorphous hard film mainly composed of hydrocarbons or allotropes of carbon. DLC can exhibit various properties by adjusting the ratio of the contained crystalline electron orbitals (sp3 bond, sp2 bond) and the hydrogen (H) content.
　ＤＬＣは、レーザリフトオフの剥離層として従来から用いられている、アモルファスシリコン、Ｗ、Ｃｒ、Ｍｏ等に比べて熱伝導率が顕著に低い。具体的には次のとおりである（単位：Ｗ／ｍＫ、０℃）。ＤＬＣ（０．２～３０）、アモルファスシリコン（１００～１５０）、Ｗ（１７７．０）、Ｃｒ（９６．５）、Ｍｏ（１３９．０）、Ａｌ（２３６）、Ｃｏ（１０５）、Ｎｉ（９４）、Ｔｉ（２２）。 DLC has a significantly lower thermal conductivity than amorphous silicon, W, Cr, Mo, etc., which have been conventionally used as a release layer for laser lift-off. Specifically, it is as follows (unit: W / mK, 0 ° C.). DLC (0.2 to 30), amorphous silicon (100 to 150), W (177.0), Cr (96.5), Mo (139.0), Al (236), Co (105), Ni ( 94), Ti (22).
　従来の剥離層（アモルファスシリコン層またはＷ、Ｃｒ、Ｍｏ等の金属層）は熱伝導率が高いことから、基板１３の下面から照射された光ＬＶの熱により、樹脂層１２の上部に形成されたＴＦＴ層４または発光素子層５の特性が悪化する可能性がある。しかしながら、ＤＬＣは、熱伝導率が低いことから、基板１３の下面から照射された光ＬＶがＴＦＴ層４または発光素子層５に与える熱的影響を抑制することができる。 Since the conventional release layer (amorphous silicon layer or metal layer such as W, Cr, Mo) has high thermal conductivity, it is formed on the upper part of the resin layer 12 by the heat of the optical LV irradiated from the lower surface of the substrate 13. There is a possibility that the characteristics of the TFT layer 4 or the light emitting element layer 5 may deteriorate. However, since the DLC has a low thermal conductivity, it is possible to suppress the thermal effect of the light LV emitted from the lower surface of the substrate 13 on the TFT layer 4 or the light emitting element layer 5.
　さらに、ＤＬＣは、アモルファスシリコンまたはＷ、Ｃｒ、Ｍｏ等に比べて硬度が高く、傷がつきにくい。それゆえ、ＤＬＣが剥離層ＡＬに使用されている場合には、剥離層ＡＬおよび基板１３に傷がつきにくい。したがって、そのような剥離層ＡＬおよび基板１３を再利用に供することが可能となる。 Furthermore, DLC has a higher hardness than amorphous silicon or W, Cr, Mo, etc., and is less likely to be scratched. Therefore, when DLC is used for the release layer AL, the release layer AL and the substrate 13 are not easily scratched. Therefore, such a release layer AL and the substrate 13 can be reused.
　そして、基板１３がＤＬＣによりコーティングされた場合には、基板１３の摩擦係数が低下し、樹脂層１２の残渣を抑制することができる。この点も、ＤＬＣを使用した剥離層ＡＬおよび基板１３が再利用に適した理由となる。 Then, when the substrate 13 is coated with DLC, the friction coefficient of the substrate 13 is lowered, and the residue of the resin layer 12 can be suppressed. This point is also the reason why the release layer AL using DLC and the substrate 13 are suitable for reuse.
　ＤＬＣを用いた剥離層ＡＬは、例えばＣＶＤ法またはスパッタ法により形成することができる。 The release layer AL using DLC can be formed by, for example, a CVD method or a sputtering method.
　剥離層ＡＬがＣＶＤ法により形成される場合、原料ガスは炭化水素であり、剥離層ＡＬは水素を含む。この場合、樹脂層１２から基板１３および剥離層ＡＬが剥離されるメカニズムとしては、樹脂層１２（熱膨張率：１０～２０×１０－６）と剥離層ＡＬ（熱膨張率：２×１０－６）の熱膨張率の差、および／または、剥離層ＡＬからの水素離脱による剥離が考えられる。 When the release layer AL is formed by the CVD method, the raw material gas is a hydrocarbon, and the release layer AL contains hydrogen. In this case, as a mechanism for peeling the substrate 13 and the release layer AL from the resin layer 12, the resin layer 12 (coefficient of thermal expansion: 10 to 20 × 10-6 ) and the release layer AL (coefficient of thermal expansion: 2 × 10 −) The difference in the coefficient of thermal expansion in 6 ) and / or the peeling due to the separation of hydrogen from the peeling layer AL can be considered.
　剥離層ＡＬがスパッタ法により形成される場合、水素フリーのＤＬＣを形成することができる。この場合、樹脂層１２から基板１３および剥離層ＡＬが剥離されるメカニズムとしては、樹脂層１２と剥離層ＡＬの熱膨張率の差が考えられる。 When the release layer AL is formed by the sputtering method, hydrogen-free DLC can be formed. In this case, as a mechanism for peeling the substrate 13 and the peeling layer AL from the resin layer 12, a difference in thermal expansion coefficient between the resin layer 12 and the peeling layer AL can be considered.
　ＤＬＣは様々な種類を有する。例えば、ＤＬＣとして、水素フリーの「ｔａ－Ｃ」（Tetrahedral Amorphous Carbon：テトラヘドラルアモルファスカーボン）または水素を含む「ａ－Ｃ：Ｈ」（hydrogenated Amorphous Carbon：水素化アモルファスカーボン）を用いることができる。ｔａ－Ｃは、水素を含まず、ｓｐ３混成軌道（ダイヤモンド構造）の炭素の割合が比較的多い（いわゆる水素フリーＤＬＣ）。従って、ｔａ－Ｃは、剥離層ＡＬに好適に用いることができる。一方、ａ－Ｃ：Ｈは、水素を含み、ｓｐ２混成軌道(グラファイト構造)の炭素の割合が比較的多い。従って、ａ－Ｃ：Ｈは、水素離脱による剥離に好適に用いられる。その他、「ｔａ－Ｃ：Ｈ」（hydrogenated Tetrahedral Amorphous Carbon）は、熱膨張率の差と水素脱離の両方の作用を用いた剥離に好適である。なお、上述したＤＬＣはいずれも再利用に適するが、その中でも水素フリーの「ｔａ－Ｃ」は、特に硬度が大きいため、長期間にわたる再利用が可能である。 DLC has various types. For example, as the DLC, hydrogen-free "ta-C" (Tetrahedral Amorphous Carbon: tetrahedral amorphous carbon) or "a-C: H" containing hydrogen (hydrogenated Amorphous Carbon: hydrogenated amorphous carbon) can be used. .. ta-C does not contain hydrogen and has a relatively large proportion of carbon in the sp3 hybrid orbital (diamond structure) (so-called hydrogen-free DLC). Therefore, ta-C can be suitably used for the release layer AL. On the other hand, a-C: H contains hydrogen and has a relatively large proportion of carbon in the sp2 hybrid orbital (graphite structure). Therefore, a-C: H is suitably used for delamination due to hydrogen desorption. In addition, "ta-C: H" (hydrogenated Tetrahedral Amorphous Carbon) is suitable for peeling using the effects of both the difference in thermal expansion coefficient and hydrogen desorption. All of the above-mentioned DLCs are suitable for reuse, but among them, the hydrogen-free "ta-C" has a particularly high hardness, so that it can be reused for a long period of time.
　剥離層ＡＬに光ＬＶを照射すると、上述のメカニズムにより、樹脂層１２と剥離層ＡＬとの結合力が低下し、樹脂層１２から基板１３および剥離層ＡＬを剥離しやすくなる。一方、樹脂層１２に光ＬＶを照射すると、光ＬＶの熱により樹脂層１２が焼かれ、基板１３と樹脂層１２との結合力が低下し、基板１３を樹脂層１２から剥離しやすくなる。 When the release layer AL is irradiated with light LV, the binding force between the resin layer 12 and the release layer AL is reduced by the above-mentioned mechanism, and the substrate 13 and the release layer AL can be easily separated from the resin layer 12. On the other hand, when the resin layer 12 is irradiated with light LV, the resin layer 12 is burned by the heat of the light LV, the bonding force between the substrate 13 and the resin layer 12 is reduced, and the substrate 13 is easily peeled from the resin layer 12.
　樹脂層１２と剥離層ＡＬとが接触する箇所では、樹脂層１２に光ＬＶが直接照射されず、樹脂層１２に熱が加えらない。そのため、樹脂層１２と剥離層ＡＬとが接触する箇所では、光ＬＶによる樹脂層１２の炭化物の発生、および光ＬＶによる樹脂層１２の痕跡の発生を抑制できる。そして、光ＬＶを照射することによる痕跡の発生または炭化物の発生を低減することにより、剥離層ＡＬと重畳していた位置における表示領域においては、視認性が改善される。そのため、樹脂層１２において、表示領域４１のように良好な視認性が要求される箇所には、剥離層ＡＬを形成する。 At the location where the resin layer 12 and the release layer AL come into contact, the resin layer 12 is not directly irradiated with light LV, and heat is not applied to the resin layer 12. Therefore, at the location where the resin layer 12 and the release layer AL come into contact with each other, it is possible to suppress the generation of carbides in the resin layer 12 due to light LV and the generation of traces of the resin layer 12 due to light LV. Then, by reducing the generation of traces or the generation of carbides due to the irradiation of the light LV, the visibility is improved in the display region at the position where the peeling layer AL is superimposed. Therefore, in the resin layer 12, the release layer AL is formed in a place where good visibility is required, such as the display area 41.
　以上のように、本実施形態では、剥離層ＡＬを設けているため、前記従来例と異なり、上述のデラミネーションの工程での不具合の発生を防いで、電子デバイスの製造における歩留まりを向上することができる。 As described above, since the release layer AL is provided in the present embodiment, unlike the conventional example, it is possible to prevent the occurrence of defects in the above-mentioned delamination process and improve the yield in the manufacture of electronic devices. Can be done.
　さらに、本実施形態では、剥離層ＡＬはダイヤモンドライクカーボンにより形成されている。これにより、ＴＦＴ層４または発光素子層５に対する熱的影響を抑制することができ、かつ、ＤＬＣを使用した剥離層ＡＬおよび基板１３を再利用に供することができる。 Further, in the present embodiment, the release layer AL is formed of diamond-like carbon. As a result, the thermal influence on the TFT layer 4 or the light emitting element layer 5 can be suppressed, and the release layer AL and the substrate 13 using the DLC can be reused.
　なお、光ＬＶは、レーザ光が望ましい。レーザ光を照射する装置としては、例えば、ＸｅＣｌガスなどを用いたエキシマレーザ照射装置、ＹＡＧ（Yttrium Aluminum Garnet）などを用いた固体レーザ照射装置であってよい。一般的には波長が長いほど、例えば３０８ｎｍのエキシマレーザ光よりも３５５ｎｍ（または３４３ｎｍ）のＹＡＧレーザ光の方が樹脂層１２の残渣が発生しやすくなる。この点、基板１３と樹脂層１２の間に剥離層ＡＬを挿入することにより樹脂層１２の残渣を抑制できるため、ＹＡＧレーザ光などの固体レーザ光を用いる場合には、剥離層ＡＬを用いる効果がより大きくなる。 It should be noted that the optical LV is preferably laser light. The device for irradiating the laser beam may be, for example, an excimer laser irradiation device using XeCl gas or the like, a solid-state laser irradiation device using YAG (Yttrium Aluminum Garnet) or the like. Generally, the longer the wavelength, the more easily the residue of the resin layer 12 is generated in the YAG laser light of 355 nm (or 343 nm) than in the excimer laser light of 308 nm, for example. In this regard, since the residue of the resin layer 12 can be suppressed by inserting the release layer AL between the substrate 13 and the resin layer 12, the effect of using the release layer AL when using a solid-state laser light such as a YAG laser light is effective. Becomes larger.
　また、図１のステップＳ９では、樹脂層１２に下面フィルム１０を貼付する。樹脂層１２における下面フィルム１０を貼付する面は、剥離層ＡＬおよび基板１３を剥離した箇所と、基板１３のみを剥離した箇所と、で樹脂層１２の積層方向の厚みに差が生じる。しかし、樹脂層１２の積層方向の厚みの差は、下面フィルム１０の積層方向の厚さに比べて小さいため、下面フィルム１０を貼付することにより積層方向の厚みの差がなくなる。 Further, in step S9 of FIG. 1, the lower surface film 10 is attached to the resin layer 12. On the surface of the resin layer 12 to which the lower surface film 10 is attached, there is a difference in the thickness of the resin layer 12 in the stacking direction between the portion where the release layer AL and the substrate 13 are peeled off and the portion where only the substrate 13 is peeled off. However, since the difference in the thickness of the resin layer 12 in the laminating direction is smaller than the thickness of the lower surface film 10 in the laminating direction, the difference in the thickness in the laminating direction is eliminated by attaching the lower surface film 10.
　図１のステップＳ１０（分断工程）では、バリア層３、樹脂層１２、および基板１３を含む積層体７を、樹脂層１２の端部を通るよう積層体７の厚み方向に切断する。これにより、バリア層３、および樹脂層１２の端面が面一となる。 In step S10 (dividing step) of FIG. 1, the laminated body 7 including the barrier layer 3, the resin layer 12, and the substrate 13 is cut in the thickness direction of the laminated body 7 so as to pass through the end portion of the resin layer 12. As a result, the end faces of the barrier layer 3 and the resin layer 12 become flush with each other.
　（変形例）
　実施形態１の変形例を図４に示す。図４は、実施形態１の電子デバイスの製造方法の一変形例を示す平面図である。図示するように、基板１３と剥離層ＡＬとの間に金属膜１７を設けてよい。金属膜１７は、例えば、Ｔｉ、Ｍｏ、又はＮｉ等により成膜されており、膜厚は約１００ｎｍである。 (Modification)
A modified example of the first embodiment is shown in FIG. FIG. 4 is a plan view showing a modified example of the method for manufacturing the electronic device of the first embodiment. As shown in the figure, a metal film 17 may be provided between the substrate 13 and the release layer AL. The metal film 17 is formed of, for example, Ti, Mo, Ni, or the like, and has a film thickness of about 100 nm.
　基板１３と剥離層ＡＬとの間に金属膜１７を設けることにより、以下の効果を期待できる。具体的には、剥離層ＡＬがＣＶＤ法により形成される場合には、基板１３と剥離層ＡＬの密着性を改善することができる。そのため、繰り返し再利用した際にも基板１３から剥離層ＡＬが剥離せず、長期間使用し続けることができる。このことから、ＣＶＤ法により形成される水素を含むａ－Ｃ：Ｈまたはｔａ－Ｃ：ＨからなるＤＬＣを剥離層ＡＬに使用する場合には、金属膜１７を設ける方が好ましい。 The following effects can be expected by providing the metal film 17 between the substrate 13 and the release layer AL. Specifically, when the release layer AL is formed by the CVD method, the adhesion between the substrate 13 and the release layer AL can be improved. Therefore, the release layer AL does not separate from the substrate 13 even when it is repeatedly reused, and it can be used for a long period of time. For this reason, when a DLC composed of a-C: H or ta-C: H containing hydrogen formed by the CVD method is used for the release layer AL, it is preferable to provide the metal film 17.
　一方、剥離層ＡＬがスパッタ法により形成される場合には、金属膜１７を設けずとも基板１３に対して良好な密着性を有する剥離層ＡＬが形成できるため、剥離層１３付きの基板１３の再利用に好適である。なお、この場合も金属層１７を設けた方が、さらなる密着力向上が期待できる。 On the other hand, when the release layer AL is formed by the sputtering method, the release layer AL having good adhesion to the substrate 13 can be formed without providing the metal film 17, so that the substrate 13 with the release layer 13 can be formed. Suitable for reuse. In this case as well, the provision of the metal layer 17 can be expected to further improve the adhesion.
　（変形例）
　実施形態１の変形例として、図５～７に示すように、基板１３を短冊状に切断してよく、基板１３を所望の大きさに切断してよい（ステップＳ２５）。そして、切断後、基板１３を剥離する（ステップＳ２６）。 (Modification)
As a modification of the first embodiment, as shown in FIGS. 5 to 7, the substrate 13 may be cut into strips, and the substrate 13 may be cut into a desired size (step S25). Then, after cutting, the substrate 13 is peeled off (step S26).
　なお、基板１３の裏面にキズまたは異物などが存在した場合には、基板１３にレーザ光を照射できない領域が生じる。そして、基板１３にレーザ光を照射できない領域においては、樹脂層１２から基板１３を剥離するときに樹脂層１２を無理に引っ張ることになり、樹脂層１２が破れるなどの不良が発生する場合がある。 If there are scratches or foreign matter on the back surface of the substrate 13, there will be a region where the laser beam cannot be irradiated to the substrate 13. Then, in the region where the substrate 13 cannot be irradiated with the laser beam, the resin layer 12 is forcibly pulled when the substrate 13 is peeled from the resin layer 12, and defects such as tearing of the resin layer 12 may occur. ..
　そこで、基板１３を短冊状に分断することにより、樹脂層１２が空気に触れ、水分を含むことができる。それにより、樹脂層１２と基板１３との密着性が低くなる。その結果、基板１３にレーザ光を照射できない領域において、樹脂層１２に無理な引っ張り応力が生じた場合であっても、樹脂層１２が破れるなどの不良の発生を防ぐことができる。 Therefore, by dividing the substrate 13 into strips, the resin layer 12 can come into contact with air and contain water. As a result, the adhesion between the resin layer 12 and the substrate 13 is lowered. As a result, even when an unreasonable tensile stress is generated in the resin layer 12 in a region where the substrate 13 cannot be irradiated with the laser beam, it is possible to prevent the resin layer 12 from being broken or other defects.
　〔実施形態２〕
　実施形態２として、図８に示すように、表示領域４１、額縁領域４２、および端子領域４３を備えたフレキシブルパネル４０において、分断マーカ等のアライメントマーカ４４の位置に剥離層ＡＬを設置してもよい。図８では、表示領域４１に剥離層ＡＬを形成しない場合を図示した。しかし、フレキシブルパネル４０に良好な視認性が求められる場合等には、表示領域４１に剥離層ＡＬを形成してもよい。アライメントマーカ４４の位置に剥離層ＡＬを設置することにより、アライメントマーカ４４に樹脂層１２の炭化物およびレーザ跡の発生等による位置合わせ不良を抑制できる。 [Embodiment 2]
As the second embodiment, as shown in FIG. 8, in the flexible panel 40 provided with the display area 41, the frame area 42, and the terminal area 43, even if the release layer AL is installed at the position of the alignment marker 44 such as the division marker. Good. FIG. 8 shows a case where the release layer AL is not formed in the display region 41. However, when the flexible panel 40 is required to have good visibility, the release layer AL may be formed in the display area 41. By installing the release layer AL at the position of the alignment marker 44, it is possible to suppress misalignment due to the generation of carbides and laser traces of the resin layer 12 on the alignment marker 44.
　また、端子領域４３には、電子回路層に設けられた配線に接続され、外部からの信号を入力する端子部（不図示）が形成されている。さらに端子部は、端子部に設けられた複数の端子に、前記配線と前記電信号を伝送する配線とが接続されている。 Further, in the terminal region 43, a terminal portion (not shown) is formed which is connected to the wiring provided in the electronic circuit layer and inputs a signal from the outside. Further, in the terminal portion, the wiring and the wiring for transmitting the electric signal are connected to a plurality of terminals provided in the terminal portion.
　（変形例）
　実施形態２の変形例として、図９および１０に示す様に、端子領域４３に剥離層ＡＬを設置してもよい。図９では、端子領域４３に剥離層ＡＬを備えることにより、アライメントマーカ４４に樹脂層１２の炭化物およびレーザ跡の発生等によるアライメントマーカ４４の読み取り性の低下を抑制できる。それにより、実装端子との位置合わせが容易にできるため、実装不良を抑制し、あるいは、実装工程を簡素化できる。その結果、実装端子の実装におけるコストを削減することができる。 (Modification)
As a modification of the second embodiment, as shown in FIGS. 9 and 10, the release layer AL may be provided in the terminal region 43. In FIG. 9, by providing the release layer AL in the terminal region 43, it is possible to suppress a decrease in readability of the alignment marker 44 due to the generation of carbides and laser traces of the resin layer 12 on the alignment marker 44. As a result, the alignment with the mounting terminal can be easily performed, so that mounting defects can be suppressed or the mounting process can be simplified. As a result, the cost of mounting the mounting terminal can be reduced.
　また、図１０に示すように、タッチパネルＴＰは、タッチパネル部ＴＰ１と端子領域４３とを備える。タッチパネル部ＴＰ１は、有機ＥＬ表示装置２の表示面上に載置される部分であって、実際にタッチパネル機能を有する部分（換言すれば、ユーザの操作を受け付ける部分）である。また、タッチパネルＴＰにおいて、各電極と接続する配線が形成された端子領域４３は、表示領域外にあるため、端子領域４３においては、剥離層ＡＬを設けなくてもよい。 Further, as shown in FIG. 10, the touch panel TP includes a touch panel unit TP1 and a terminal area 43. The touch panel unit TP1 is a portion placed on the display surface of the organic EL display device 2 and actually has a touch panel function (in other words, a portion that accepts a user's operation). Further, in the touch panel TP, since the terminal region 43 in which the wiring connecting to each electrode is formed is outside the display region, it is not necessary to provide the release layer AL in the terminal region 43.
　〔実施形態３〕
　図１１は実施形態３の表示デバイスの製造方法を示す平面図であり、図１２は実施形態３の表示デバイスの製造方法を示す断面図である。なお、図１２では、図５の製造フローに示すように、分断した後（ステップＳ２５）、基板を剥離した（ステップ２６）。しかし、図１に示すように、基板を剥離した後（ステップＳ８）、分断してもよい（ステップＳ１０）。 [Embodiment 3]
FIG. 11 is a plan view showing a method of manufacturing the display device of the third embodiment, and FIG. 12 is a cross-sectional view showing the method of manufacturing the display device of the third embodiment. In FIG. 12, as shown in the manufacturing flow of FIG. 5, the substrate was peeled off after being divided (step S25) (step 26). However, as shown in FIG. 1, after the substrate is peeled off (step S8), it may be divided (step S10).
　実施形態３では、図１１の（ａ）および図１２の（ａ）に示すように、大判の基板１３上に剥離層ＡＬを形成し、剥離層ＡＬ上に、島状の第１部１２ａ（第１の表示領域４１ａに対応）および島状の第２部１２ｂ（第２の表示領域４１ｂに対応）を含む樹脂層１２を形成する。次いで、第１部１２ａおよび第２部１２ｂを覆うように共通のバリア層３を形成し、次いで、第１部１２ａと重なる領域４ａおよび第２部１２ｂと重なる領域４ｂを含むＴＦＴ層を形成する。次いで、第１部１２ａと重なる領域５ａおよび第２部１２ｂと重なる領域５ｂを含む発光素子層を形成し、発光素子層を覆う封止層６を形成する。 In the third embodiment, as shown in (a) of FIG. 11 and (a) of FIG. 12, the release layer AL is formed on the large-sized substrate 13, and the island-shaped first portion 12a (is formed on the release layer AL. A resin layer 12 including a first display region 41a) and an island-shaped second portion 12b (corresponding to a second display region 41b) is formed. Next, a common barrier layer 3 is formed so as to cover the first part 12a and the second part 12b, and then a TFT layer including a region 4a overlapping the first part 12a and a region 4b overlapping the second part 12b is formed. .. Next, a light emitting element layer including a region 5a overlapping the first part 12a and a region 5b overlapping the second part 12b is formed, and a sealing layer 6 covering the light emitting element layer is formed.
　次いで、図１１の（ｂ）および図１２の（ｂ）、（ｃ）に示すように、平面視における第１部１２ａよりも外側にあってバリア層３および剥離部ＡＬが接触する部分を通るように、封止層６、バリア層３、剥離層ＡＬおよび基板１３を切断し、平面視における第２部１２ｂよりも外側にあってバリア層３および剥離層ＡＬが接触する部分を通るように、封止層６、バリア層３、剥離層ＡＬおよび基板１３を切断するプレカット工程を行う。その後、分割基板１３ａ上の、第１部１２ａおよびバリア層３を含む第１積層体７Ａと、分割基板１３ｂ上の、第２部１２ｂおよびバリア層３を含む第２積層体７Ｂそれぞれに上面フィルム１４を張り付ける。 Next, as shown in (b) of FIG. 11 and (b) and (c) of FIG. 12, it passes through a portion outside the first portion 12a in a plan view and in contact with the barrier layer 3 and the peeling portion AL. As described above, the sealing layer 6, the barrier layer 3, the release layer AL and the substrate 13 are cut so as to pass through a portion outside the second portion 12b in a plan view where the barrier layer 3 and the release layer AL are in contact with each other. , A precut step of cutting the sealing layer 6, the barrier layer 3, the release layer AL, and the substrate 13 is performed. After that, a top film is formed on the first laminated body 7A including the first portion 12a and the barrier layer 3 on the divided substrate 13a and the second laminated body 7B including the second portion 12b and the barrier layer 3 on the divided substrate 13b. Paste 14 on it.
　次いで、図１１の（ｃ）および図１２の（ｄ）のように、第１積層体７Ａを、第１部１２ａの端部を通るよう厚み方向に切断し、第２積層体７Ｂを、第２部１２ｂの端部を通るよう厚み方向に切断する切り出し工程を行う。次いで、図１２の（ｅ）、（ｆ）のように、第１積層体７Ａおよび第２積層体７Ｂそれぞれの下側に位置する剥離層ＡＬに光ＬＶを照射し、第１部１２ａを分割基板１３ａから剥離し、第２部１２ｂを分割基板１３ｂから剥離する。 Next, as shown in (c) of FIG. 11 and (d) of FIG. 12, the first laminated body 7A is cut in the thickness direction so as to pass through the end portion of the first portion 12a, and the second laminated body 7B is cut into the second laminated body 7B. A cutting step of cutting in the thickness direction so as to pass through the end portion of the second portion 12b is performed. Next, as shown in FIGS. 12 (e) and 12 (f), the release layer AL located below each of the first laminated body 7A and the second laminated body 7B is irradiated with light LV, and the first portion 12a is divided. It is peeled off from the substrate 13a, and the second part 12b is peeled off from the divided substrate 13b.
　実施形態３では、分割基板１３ａ（ガラス基板）に付着した状態の積層体７Ａと、分割基板１３ｂ（ガラス基板）に付着した状態の積層体７Ｂとを別々に運搬、保管することができる。積層体７Ａ・７Ｂは、ガラス基板から剥がされた状態（可撓状態）の積層体と比較して運搬、保管が格段に容易である。 In the third embodiment, the laminated body 7A attached to the divided substrate 13a (glass substrate) and the laminated body 7B attached to the divided substrate 13b (glass substrate) can be separately transported and stored. The laminated bodies 7A and 7B are much easier to transport and store than the laminated body in a state of being peeled off from the glass substrate (flexible state).
　図１２の（ｃ）に示すように、バリア層３が、樹脂層の第１部１２ａおよび第２部１２ｂそれぞれの上面および端面を覆っているため、樹脂層１２ａ・１２ｂに水分等の異物が浸透することを防ぐことができ、ステップＳ８（剥離工程）までの間に剥離層ＡＬと、樹脂層の第１部１２ａあるいは第２部１２ｂとが（意図せず）分離してしまうという問題を解消することができる。例えば、積層体７Ａの運搬作業中に、樹脂層の第１部１２ａが剥離層ＡＬから剥がれ、積層体７Ａが落下して破損するといったアクシデントを防ぐことができる。 As shown in FIG. 12 (c), since the barrier layer 3 covers the upper surfaces and end faces of the first portion 12a and the second portion 12b of the resin layer, foreign matter such as moisture is contained in the resin layers 12a and 12b. It is possible to prevent permeation, and there is a problem that the peeling layer AL and the first part 12a or the second part 12b of the resin layer are (unintentionally) separated by the step S8 (peeling step). It can be resolved. For example, it is possible to prevent an accident in which the first portion 12a of the resin layer is peeled off from the peeling layer AL and the laminated body 7A is dropped and damaged during the transportation work of the laminated body 7A.
　実施形態３では、樹脂層１２を第１部１２ａおよび第２部１２ｂの２つに分離形成しているが、これに限定されず、３つ以上に分割してもよい。また、ステップＳ４～Ｓ６において、第１部１２ａ上に複数パネルに対応するデバイスを形成するとともに、第２部１２ｂ上に複数パネルに対応するデバイスを形成しておき、ステップＳ１０において、積層体７Ａおよび積層体７Ｂそれぞれから複数の電子デバイス（可撓性パネル）を得る構成でもよい。また、第１の表示領域４１ａおよび第２の表示領域４１ｂは、さらに複数の表示領域に分割して形成されていてもよい。 In the third embodiment, the resin layer 12 is separated and formed into two parts, the first part 12a and the second part 12b, but the present invention is not limited to this, and the resin layer 12 may be divided into three or more parts. Further, in steps S4 to S6, a device corresponding to a plurality of panels is formed on the first part 12a, and a device corresponding to the plurality of panels is formed on the second part 12b, and in step S10, the laminated body 7A is formed. And a plurality of electronic devices (flexible panels) may be obtained from each of the laminated body 7B. Further, the first display area 41a and the second display area 41b may be further divided into a plurality of display areas.
　実施形態１～３では、電子デバイスの一例としてトップエミッション型の有機ＥＬ表示装置（ＯＬＥＤ）２について説明しているが、これに限定されない。前記各実施形態は、図１３の（ａ）に示す、ボトムエミッション型のＯＬＥＤにも適用可能である。この場合、例えば、樹脂層１２を透明ポリイミドで構成し、アノード２２を透光性の導電体で構成し、カソード２５を光反射性の導電体で構成する。前記各実施形態によれば、剥離工程において樹脂層１２の下面が劣化しにくいため、表示光が樹脂層１２の下面を通過するボトムエミッション型のＯＬＥＤを有する表示デバイスにも好適といえる。 In the first to third embodiments, the top emission type organic EL display device (OLED) 2 is described as an example of the electronic device, but the present invention is not limited to this. Each of the above embodiments can also be applied to the bottom emission type OLED shown in FIG. 13 (a). In this case, for example, the resin layer 12 is made of transparent polyimide, the anode 22 is made of a translucent conductor, and the cathode 25 is made of a light-reflecting conductor. According to each of the above embodiments, since the lower surface of the resin layer 12 is less likely to deteriorate in the peeling step, it can be said that it is also suitable for a display device having a bottom emission type OLED in which the display light passes through the lower surface of the resin layer 12.
　また、前記各実施形態は、図１３の（ｂ）に示す、可撓性の液晶表示デバイスにも適用可能である。この場合、例えば、樹脂層１２の背面に可撓性のバックライトユニット５０を配し、樹脂層１２を透明ポリイミドで構成し、ＴＦＴ層４に画素電極ＰＥを形成し、画素電極ＰＥと可撓性の対向基板３７（カラーフィルタ基板）との間に、シャッターとして機能する液晶層３５を配する。前記各実施形態によれば、剥離工程において樹脂層１２の下面が劣化しにくいため、表示光ＤＬ（バックライト光）が樹脂層１２の下面を通過する液晶表示デバイスにも好適といえる。 Further, each of the above embodiments can be applied to the flexible liquid crystal display device shown in FIG. 13 (b). In this case, for example, a flexible backlight unit 50 is arranged on the back surface of the resin layer 12, the resin layer 12 is made of transparent polyimide, a pixel electrode PE is formed on the TFT layer 4, and the pixel electrode PE is flexible. A liquid crystal layer 35 that functions as a shutter is arranged between the plastic facing substrate 37 (color filter substrate). According to each of the above embodiments, since the lower surface of the resin layer 12 is less likely to deteriorate in the peeling step, it can be said that it is also suitable for a liquid crystal display device in which the display light DL (backlight light) passes through the lower surface of the resin layer 12.
　〔まとめ〕
　本実施形態にかかる電子デバイスが備える電気光学素子（電流によって輝度や透過率が制御される電気光学素子）は特に限定されるものではない。本実施形態にかかる表示装置としては、例えば、電気光学素子としてＯＬＥＤ（Organic Light Emitting Diode：有機発光ダイオード）を備えた有機ＥＬディスプレイ、電気光学素子として無機発光ダイオードを備えた無機ＥＬディスプレイ、電気光学素子としてＱＬＥＤ（Quantum dot Light Emitting Diode：量子ドット発光ダイオード）を備えたＱＬＥＤディスプレイ等が挙げられる。 [Summary]
The electro-optical element (electro-optical element whose brightness and transmittance are controlled by an electric current) included in the electronic device according to the present embodiment is not particularly limited. Examples of the display device according to the present embodiment include an organic EL display provided with an OLED (Organic Light Emitting Diode) as an electro-optical element, an inorganic EL display provided with an inorganic light emitting diode as an electro-optical element, and electro-optical. Examples of the element include a QLED display provided with a QLED (Quantum dot Light Emitting Diode).
　本発明は上述した実施形態に限定されるものではなく、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。さらに、各実施形態にそれぞれ開示された技術的手段を組み合わせることにより、新しい技術的特徴を形成することができる。 The present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. Further, new technical features can be formed by combining the technical means disclosed in each embodiment.
　〔態様１〕
　母基板上に島状の剥離層を形成する第１成膜工程と、
　前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、
　前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、
　前記バリア層の上層に電子回路層を形成する第４成膜工程と、
　前記剥離層および前記樹脂層に対して、レーザ光を照射し、前記母基板および前記剥離層から前記樹脂層を剥離する剥離工程と、
　を含む電子デバイスの製造方法。 [Aspect 1]
The first film formation step of forming an island-shaped release layer on the mother substrate, and
A second film forming step of laminating a resin layer so as to cover at least a part of the peeling layer,
A third film forming step of forming a barrier layer so as to cover the resin layer, and
A fourth film forming step of forming an electronic circuit layer on the upper layer of the barrier layer, and
A peeling step of irradiating the peeling layer and the resin layer with a laser beam to peel the resin layer from the mother substrate and the peeling layer.
A method of manufacturing an electronic device including.
　〔態様２〕
　前記第２成膜工程では、前記剥離層の全面を覆うように、樹脂層を積層させる、例えば様態１に記載の電子デバイスの製造方法。 [Aspect 2]
The method for manufacturing an electronic device according to, for example, mode 1, in which the resin layer is laminated so as to cover the entire surface of the release layer in the second film forming step.
　〔態様３〕
　前記第４成膜工程と前記剥離工程との間に、前記樹脂層および前記バリア層を含む積層体を、前記樹脂層の端部を通るよう前記積層体の厚み方向に分断する分断工程を含む、例えば様態１または２に記載の電子デバイスの製造方法。 [Aspect 3]
Between the fourth film forming step and the peeling step, a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included. , For example, the method for manufacturing an electronic device according to mode 1 or 2.
　〔態様４〕
　前記分断工程では、前記積層体に加えて前記剥離層および前記母基板も分断する、例えば様態３に記載の電子デバイスの製造方法。 [Mode 4]
The method for manufacturing an electronic device according to, for example, mode 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminate.
　〔態様５〕
　前記第１成膜工程では、前記分断工程でのアライメントマーカの設置位置に重畳するように前記剥離層を形成する、例えば様態３または４に記載の電子デバイスの製造方法。 [Aspect 5]
The method for manufacturing an electronic device according to, for example, mode 3 or 4, wherein in the first film forming step, the peeling layer is formed so as to be superimposed on the installation position of the alignment marker in the dividing step.
　〔態様６〕
　前記第１成膜工程では、
　前記電子回路層に設けられた配線に接続され、外部から信号を入力する端子領域に重畳するように前記剥離層を形成する、例えば様態３～５のいずれかに記載の電子デバイスの製造方法。 [Aspect 6]
In the first film forming step,
The method for manufacturing an electronic device according to any one of modes 3 to 5, for example, wherein the release layer is formed so as to be connected to a wiring provided in the electronic circuit layer and superimposed on a terminal region for inputting a signal from the outside.
　〔態様７〕
　前記第２成膜工程では、島状の第１部および島状の第２部を含む樹脂層を形成し、
　前記第３成膜工程では、前記第１部および前記第２部を覆う共通のバリア層を形成し、
　前記第４成膜工程では、前記第１部と重なる領域および前記第２部と重なる領域を含む前記電子回路層を形成し、
　前記第４成膜工程と前記剥離工程との間に、平面視において前記第１部および前記第２部よりも外側にあって前記バリア層および前記剥離層が接触する部分を通るように、前記バリア層、前記剥離層、および前記母基板を切断するプレカット工程を含む、例えば様態１に記載の電子デバイスの製造方法。 [Aspect 7]
In the second film forming step, a resin layer containing an island-shaped first portion and an island-shaped second portion is formed.
In the third film forming step, a common barrier layer covering the first part and the second part is formed.
In the fourth film forming step, the electronic circuit layer including the region overlapping the first portion and the region overlapping the second portion is formed.
Between the fourth film forming step and the peeling step, the barrier layer and the peeling layer come into contact with each other on the outer side of the first part and the second part in a plan view. The method for manufacturing an electronic device according to, for example, mode 1, which comprises a precut step of cutting the barrier layer, the peeling layer, and the mother substrate.
　〔態様８〕
　前記プレカット工程と前記剥離工程との間に、前記第１部および前記バリア層を含む第１積層体を、前記第１部の端部を通るように前記第１積層体の厚み方向に切断し、前記第２部および前記バリア層を含む第２積層体を、前記第２部の端部が通るように前記第２積層体の厚み方向に切断する切だし工程を含む、例えば様態７に記載の電子デバイスの製造方法。 [Aspect 8]
Between the precut step and the peeling step, the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part. The second laminated body including the second part and the barrier layer is cut in the thickness direction of the second laminated body so that the end portion of the second part passes through, for example, the mode 7. How to manufacture electronic devices.
　〔態様９〕
　前記剥離層は、ダイヤモンドライクカーボンにより形成される、例えば様態１～８のいずれかに記載の電子デバイスの製造方法。 [Aspect 9]
The method for manufacturing an electronic device according to any one of, for example, Modes 1 to 8, wherein the release layer is formed of diamond-like carbon.
　〔態様１０〕
　前記ダイヤモンドライクカーボンの種類は、ｔａ－Ｃ、ａ－Ｃ：Ｈ、またはｔａ－Ｃ：Ｈのいずれかである、例えば様態９に記載の電子デバイスの製造方法。 [Aspect 10]
The method for manufacturing an electronic device according to, for example, mode 9, wherein the type of diamond-like carbon is either ta-C, a-C: H, or ta-C: H.
　〔態様１１〕
　前記剥離工程の後に、前記母基板および前記剥離層を前記第１成膜工程乃至前記第４成膜工程に再利用する、例えば様態９または１０に記載の電子デバイスの製造方法。 [Aspect 11]
The method for manufacturing an electronic device according to, for example, mode 9 or 10, wherein after the peeling step, the mother substrate and the peeling layer are reused in the first film forming step to the fourth film forming step.
　〔態様１２〕
　前記剥離層は、ＣＶＤ法またはスパッタ法により形成される、例えば様態９から１１のいずれかに記載の電子デバイスの製造方法。 [Aspect 12]
The method for manufacturing an electronic device according to any one of, for example, Modes 9 to 11, wherein the release layer is formed by a CVD method or a sputtering method.
　〔態様１３〕
　前記母基板と前記剥離層の間に金属膜が形成される、例えば様態９～１２のいずれかに記載の電子デバイスの製造方法。 [Aspect 13]
The method for manufacturing an electronic device according to any one of modes 9 to 12, for example, wherein a metal film is formed between the mother substrate and the release layer.
　〔態様１４〕
　前記金属膜は、Ｔｉ、Ｍｏ、及びＮｉの少なくともいずれかにより形成される、例えば様態１３に記載の電子デバイスの製造方法。 [Aspect 14]
The method for manufacturing an electronic device according to, for example, mode 13, wherein the metal film is formed of at least one of Ti, Mo, and Ni.
　〔態様１５〕
　前記レーザ光は、エキシマレーザ照射装置または固体レーザ照射装置から発生するレーザ光である、例えば様態１～１４のいずれかに記載の電子デバイスの製造方法。 [Aspect 15]
The method for manufacturing an electronic device according to any one of modes 1 to 14, for example, wherein the laser beam is a laser beam generated from an excimer laser irradiation device or a solid-state laser irradiation device.
　〔態様１６〕
　前記電子回路層は、ＴＦＴ層である、例えば様態１～１５のいずれかに記載の電子デバイスの製造方法。 [Aspect 16]
The method for manufacturing an electronic device according to any one of modes 1 to 15, for example, wherein the electronic circuit layer is a TFT layer.
　〔態様１７〕
　前記電子回路層は、前記ＴＦＴ層よりも上層に発光素子層が形成される、例えば様態１６に記載の電子デバイスの製造方法。 [Aspect 17]
The method for manufacturing an electronic device according to, for example, mode 16, wherein the electronic circuit layer has a light emitting element layer formed above the TFT layer.
　〔態様１８〕
　前記電子回路層は、前記ＴＦＴ層よりも上層に液晶層が形成される、例えば様態１６に記載の電子デバイスの製造方法。 [Aspect 18]
The method for manufacturing an electronic device according to, for example, mode 16, wherein a liquid crystal layer is formed on the electronic circuit layer above the TFT layer.
　〔態様１９〕
　前記電子回路層は、前記ＴＦＴ層よりも上層にマイクロＬＥＤ層が形成される、例えば様態１６に記載の電子デバイスの製造方法。 [Aspect 19]
The method for manufacturing an electronic device according to, for example, mode 16, wherein a micro LED layer is formed on the electronic circuit layer above the TFT layer.
　〔態様２０〕
　前記電子回路層は、タッチパネル層である、例えば様態１～１５のいずれかに記載の電子デバイスの製造方法。 [Aspect 20]
The method for manufacturing an electronic device according to any one of modes 1 to 15, wherein the electronic circuit layer is a touch panel layer.
２　有機ＥＬ表示装置
３　バリア層
４　電子回路層
５　発光素子層
６　封止層
７　積層体
７Ａ　第１積層体
７Ｂ　第２積層体
１０　下面フィルム
１２、１２ａ・１２ｂ　樹脂層
１３　基板
１３ａ、１３ｂ　分割基板
１４　上面フィルム
１５　半導体膜
１６、１６・１８・２０、１８、２０　無機絶縁膜
１７　金属膜
２１　平坦化膜
２２　アノード
２３　アノードエッジカバー
２５　カソード
２６、２６・２８、２８　無機封止膜
２７　有機封止膜
３５　液晶層
３７　対向基板
３９　機能フィルム
４１　表示領域
４２　額縁領域
４３　端子領域
４４　アライメントマーカ
５０　バックライトユニット
ＡＬ　剥離層
ＬＶ　光
ＴＰ　タッチパネル
ＴＰ１　タッチパネル部 2 Organic EL display device 3 Barrier layer 4 Electronic circuit layer 5 Light emitting element layer 6 Sealing layer 7 Laminated body 7A 1st laminated body 7B 2nd laminated body 10 Bottom film 12, 12a / 12b Resin layer 13 Substrate 13a, 13b Divided substrate 14 Top film 15 Semiconductor film 16, 16, 18, 20, 18, 20 Inorganic insulating film 17 Metal film 21 Flattening film 22 Anode 23 Anode edge cover 25 Cathode 26, 26, 28, 28 Inorganic sealing film 27 Organic sealing Film 35 Liquid crystal layer 37 Opposing substrate 39 Functional film 41 Display area 42 Frame area 43 Terminal area 44 Alignment marker 50 Backlight unit AL Peeling layer LV Optical TP Touch panel TP1 Touch panel part

Claims (20)

  1. 　母基板上に島状の剥離層を形成する第１成膜工程と、
    　前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、
    　前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、
    　前記バリア層の上層に電子回路層を形成する第４成膜工程と、
    　前記剥離層および前記樹脂層に対して、レーザ光を照射し、前記母基板および前記剥離層から前記樹脂層を剥離する剥離工程と、
    　を含む電子デバイスの製造方法。     The first film formation step of forming an island-shaped release layer on the mother substrate, and
    A second film forming step of laminating a resin layer so as to cover at least a part of the peeling layer,
    A third film forming step of forming a barrier layer so as to cover the resin layer, and
    A fourth film forming step of forming an electronic circuit layer on the upper layer of the barrier layer, and
    A peeling step of irradiating the peeling layer and the resin layer with a laser beam to peel the resin layer from the mother substrate and the peeling layer.
    A method of manufacturing an electronic device including.
  2. 　前記第２成膜工程では、前記剥離層の全面を覆うように、樹脂層を積層させる請求項１に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 1, wherein in the second film forming step, a resin layer is laminated so as to cover the entire surface of the peeling layer.
  3. 　前記第４成膜工程と前記剥離工程との間に、前記樹脂層および前記バリア層を含む積層体を、前記樹脂層の端部を通るよう前記積層体の厚み方向に分断する分断工程を含む請求項１または２に記載の電子デバイスの製造方法。 Between the fourth film forming step and the peeling step, a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included. The method for manufacturing an electronic device according to claim 1 or 2.
  4. 　前記分断工程では、前記積層体に加えて前記剥離層および前記母基板も分断する請求項３に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminate.
  5. 　前記第１成膜工程では、前記分断工程でのアライメントマーカの設置位置に重畳するように前記剥離層を形成する請求項３または４に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 3 or 4, wherein in the first film forming step, the peeling layer is formed so as to be superimposed on the installation position of the alignment marker in the dividing step.
  6. 　前記第１成膜工程では、
    　前記電子回路層に設けられた配線に接続され、外部から信号を入力する端子領域に重畳するように前記剥離層を形成する請求項３～５のいずれか１項に記載の電子デバイスの製造方法。     In the first film forming step,
    The method for manufacturing an electronic device according to any one of claims 3 to 5, which is connected to a wiring provided in the electronic circuit layer and forms the peeling layer so as to be superimposed on a terminal region for inputting a signal from the outside. ..
  7. 　前記第２成膜工程では、島状の第１部および島状の第２部を含む樹脂層を形成し、
    　前記第３成膜工程では、前記第１部および前記第２部を覆う共通のバリア層を形成し、
    　前記第４成膜工程では、前記第１部と重なる領域および前記第２部と重なる領域を含む前記電子回路層を形成し、
    　前記第４成膜工程と前記剥離工程との間に、平面視において前記第１部および前記第２部よりも外側にあって前記バリア層および前記剥離層が接触する部分を通るように、前記バリア層、前記剥離層、および前記母基板を切断するプレカット工程を含む請求項１に記載の電子デバイスの製造方法。     In the second film forming step, a resin layer containing an island-shaped first portion and an island-shaped second portion is formed.
    In the third film forming step, a common barrier layer covering the first part and the second part is formed.
    In the fourth film forming step, the electronic circuit layer including the region overlapping the first portion and the region overlapping the second portion is formed.
    Between the fourth film forming step and the peeling step, the barrier layer and the peeling layer come into contact with each other on the outer side of the first part and the second part in a plan view. The method for manufacturing an electronic device according to claim 1, further comprising a precut step of cutting the barrier layer, the peeling layer, and the mother substrate.
  8. 　前記プレカット工程と前記剥離工程との間に、前記第１部および前記バリア層を含む第１積層体を、前記第１部の端部を通るように前記第１積層体の厚み方向に切断し、前記第２部および前記バリア層を含む第２積層体を、前記第２部の端部が通るように前記第２積層体の厚み方向に切断する切だし工程を含む請求項７に記載の電子デバイスの製造方法。 Between the precut step and the peeling step, the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part. The seventh aspect of the present invention includes a cutting step of cutting the second laminated body including the second part and the barrier layer in the thickness direction of the second laminated body so that the end portion of the second part passes through. Manufacturing method of electronic devices.
  9. 　前記剥離層は、ダイヤモンドライクカーボンにより形成される、請求項１～８のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 8, wherein the release layer is formed of diamond-like carbon.
  10. 　前記ダイヤモンドライクカーボンの種類は、ｔａ－Ｃ、ａ－Ｃ：Ｈ、またはｔａ－Ｃ：Ｈのいずれかである、請求項９に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 9, wherein the type of diamond-like carbon is either ta-C, a-C: H, or ta-C: H.
  11. 　前記剥離工程の後に、前記母基板および前記剥離層を前記第１成膜工程乃至前記第４成膜工程に再利用する、請求項９または１０に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 9 or 10, wherein after the peeling step, the mother substrate and the peeling layer are reused in the first film forming step to the fourth film forming step.
  12. 　前記剥離層は、ＣＶＤ法またはスパッタ法により形成される、請求項９から１１のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 9 to 11, wherein the release layer is formed by a CVD method or a sputtering method.
  13. 　前記母基板と前記剥離層の間に金属膜が形成される請求項９～１２のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 9 to 12, wherein a metal film is formed between the mother substrate and the release layer.
  14. 　前記金属膜は、Ｔｉ、Ｍｏ、及びＮｉの少なくともいずれかにより形成される、請求項１３に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 13, wherein the metal film is formed of at least one of Ti, Mo, and Ni.
  15. 　前記レーザ光は、エキシマレーザ照射装置または固体レーザ照射装置から発生するレーザ光である、請求項１～１４のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 14, wherein the laser beam is a laser beam generated from an excimer laser irradiation device or a solid-state laser irradiation device.
  16. 　前記電子回路層は、ＴＦＴ層である請求項１～１５のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 15, wherein the electronic circuit layer is a TFT layer.
  17. 　前記電子回路層は、前記ＴＦＴ層よりも上層に発光素子層が形成される請求項１６に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 16, wherein the electronic circuit layer has a light emitting element layer formed above the TFT layer.
  18. 　前記電子回路層は、前記ＴＦＴ層よりも上層に液晶層が形成される請求項１６に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 16, wherein a liquid crystal layer is formed on the electronic circuit layer above the TFT layer.
  19. 　前記電子回路層は、前記ＴＦＴ層よりも上層にマイクロＬＥＤ層が形成される請求項１６に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 16, wherein a micro LED layer is formed on the electronic circuit layer above the TFT layer.
  20. 　前記電子回路層は、タッチパネル層である請求項１～１５のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 15, wherein the electronic circuit layer is a touch panel layer.
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