CN105355752B - A kind of LED chip construction, encapsulating structure and preparation method thereof - Google Patents
A kind of LED chip construction, encapsulating structure and preparation method thereof Download PDFInfo
- Publication number
- CN105355752B CN105355752B CN201510710696.1A CN201510710696A CN105355752B CN 105355752 B CN105355752 B CN 105355752B CN 201510710696 A CN201510710696 A CN 201510710696A CN 105355752 B CN105355752 B CN 105355752B
- Authority
- CN
- China
- Prior art keywords
- groove
- chip
- electrode
- type batch
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention provides a kind of LED chip construction, including chip, the chip includes electrically-conductive backing plate and the epitaxial layer on electrically-conductive backing plate, and the epitaxial layer includes p-type batch coating and N-type batch coating, luminescent layer is provided between the p-type batch coating and N-type batch coating；The chip also includes first electrode and second electrode, and the first electrode above epitaxial layer with being connected, and second electrode below electrically-conductive backing plate with being connected；The both sides of the electrically-conductive backing plate bottom and the both sides of second electrode, which are vertically run through, the first groove.The present invention is simple in construction, passes through the groove of design so that during encapsulation, conductive silver glue can be limited at the interior angle of groove, chip electric leakage Problem of Failure caused by effectively avoiding elargol excess.
Description
Technical field
The present invention relates to a kind of LED chip construction, encapsulating structure and preparation method thereof.
Background technology
LED (light emitting diode, Light-emitting diode) industry is one of industry to attract most attention in recent years, hair
Exhibition so far, LED product have energy-conservation, power saving, high efficiency, the reaction time soon, the life cycle time it is long and not mercurous, with
The advantages that environmental benefit, therefore be considered as the optimal light source of new generation green energy conservation illumination.
In existing vertical version LED structure, because vertically the usual substrate of version is electrically-conductive backing plate, it is necessary to be done using conductive silver glue
Die bond causes chip to light action (such as Fig. 1) after being powered, wherein, vertical version chip is in die bond processing procedure if conductive silver glue
When quantity is more, because of capillarity conductive silver glue can be caused to climb to chip light emitting layer and cause chip electrical leakage problems (such as Fig. 2),
And then cause chip failure, cause product quality and yield to have great loss.
The content of the invention
The problem to be solved in the present invention is to provide a kind of LED chip construction efficiently, safe.
In order to solve the above technical problems, the technical solution adopted by the present invention is：A kind of LED chip construction, it is special
Sign is：Including chip, the chip includes electrically-conductive backing plate and the epitaxial layer on electrically-conductive backing plate, and the epitaxial layer includes P
Type batch coating and N-type batch coating, luminescent layer is provided between the p-type batch coating and N-type batch coating；The chip also includes first
Electrode and second electrode, the first electrode above epitaxial layer with being connected, and second electrode below electrically-conductive backing plate with being connected；It is described to lead
The both sides of electric substrate bottom and the both sides of second electrode, which are vertically run through, the first groove.
Further, the 1/3 of the groove depth of first groove >=chip gross thickness；Groove width >=10um of first groove；
Interior angle≤90 ° of first groove.
Preferably, the groove depth of first groove is the 1/3 of chip gross thickness；The groove width of first groove is 10um；
The interior angle of first groove is 90 °.
The present invention also provides a kind of encapsulating structure of light-emitting diode chip for backlight unit, including above-mentioned light-emitting diode chip for backlight unit, institute
State beneath chips and be provided with package support, sealing, the conductive silver glue are filled by conductive silver glue between the chip and packing support
Packed height be limited to the first groove top.
Another object of the present invention is to provide a kind of preparation method of light-emitting diode chip for backlight unit, comprise the following steps：
(1) the intermediate structure I of a light-emitting diode chip for backlight unit is made, intermediate structure I includes chip, and the chip includes leading
Electric substrate and the epitaxial layer on electrically-conductive backing plate, the epitaxial layer include p-type batch coating and N-type batch coating, and the p-type batch is covered
Luminescent layer is provided between layer and N-type batch coating；The chip also includes two first electrodes and a second electrode, and described two
Individual first electrode difference position and the both ends above epitaxial layer, the second electrode below electrically-conductive backing plate with being connected.
Above-mentioned intermediate structure I epitaxial layer is scratched using laser cutting, forms intermediate structure II；
Above-mentioned intermediate structure II includes intermediate structure I, meanwhile, one of crack is formed among epitaxial layer, by p-type batch coating, N
Type batch coating and luminescent layer are divided into two parts.
(2) grooving is carried out to second electrode and electrically-conductive backing plate using cutting machine, forms intermediate structure III；The intermediate structure
III includes intermediate structure II, while the both sides of the electrically-conductive backing plate bottom and the both sides of second electrode are vertically through having
First groove, the centre of the electrically-conductive backing plate bottom and the centre of second electrode, which are run through, the second groove.Preferably, the second groove
Groove width >=20um.
(3) intermediate structure III is vertically cleaved along Slit bottom to the second groove top, is classified as two parts, formed
Two identical LED chip constructions.
The present invention has the advantages and positive effects of：The present invention is simple in construction, passes through the groove of design so that encapsulation
When, conductive silver glue can be limited at the interior angle of groove because surface tension, and chip caused by effectively avoiding elargol excess leaks
Electric Problem of Failure.
Brief description of the drawings
Fig. 1 is schematic diagram when light-emitting diode chip for backlight unit elargol is not excessive in the prior art
Fig. 2 be in the prior art light-emitting diode chip for backlight unit elargol excess when schematic diagram
Fig. 3 is the schematic diagram of LED chip construction in the embodiment of the present invention 1
Fig. 4 is LED encapsulation construction schematic diagram in the embodiment of the present invention 2
Fig. 5 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure I in the embodiment of the present invention 3
Fig. 6 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure II in the embodiment of the present invention 3
Fig. 7 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure III in the embodiment of the present invention 3
Fig. 8 is the structural representation for vertically cleaving light-emitting diode chip for backlight unit intermediate structure III in the embodiment of the present invention 3
Embodiment
Embodiment 1
As shown in figure 3, a kind of LED chip construction, including chip, chip include electrically-conductive backing plate 5 and positioned at conductions
Epitaxial layer on substrate 5, epitaxial layer includes p-type batch coating 9 and N-type batch coating 10, between p-type batch coating 9 and N-type batch coating 10
Provided with luminescent layer 3；
P-type batch coating 9 is upper in the present embodiment, and N-type batch coating 10 is under, and luminescent layer 3 is between two batches coating.
Chip also includes first electrode 1 and second electrode 6, first electrode 1 be connected above epitaxial layer, second electrode 6 and
The lower section of electrically-conductive backing plate 5 connects；The both sides of the bottom of electrically-conductive backing plate 5 and the both sides of second electrode 6, which are vertically run through, first
Groove 11.
First electrode 1 is positive electrode in the present embodiment, and second electrode 6 is negative electrode.
The groove depth a of first groove 11 is the 1/3 of chip gross thickness；The groove width b of first groove 11 is 10um；First groove
Interior angle θ is 90 °.
Embodiment 2
As shown in figure 4, a kind of encapsulating structure of light-emitting diode chip for backlight unit, including the light-emitting diodes tube core described in embodiment 1
Piece, beneath chips are provided with package support 8, fill sealing by the glue of conductive silver 7 between chip and packing support 8, conductive silver glue 7 is filled out
Fill height and be limited to the top of the first groove 11.
Embodiment 3
A kind of method for preparing LED chip construction in embodiment 1, comprises the following steps：
(1) the intermediate structure I of a light-emitting diode chip for backlight unit is made, intermediate structure I is as shown in figure 5, including chip, chip
Epitaxial layer including electrically-conductive backing plate 5 and on electrically-conductive backing plate 5, epitaxial layer include p-type batch coating 9 and N-type batch coating 10, p-type
Criticize and be provided with luminescent layer 3 between coating 9 and N-type batch coating 10；P-type batch coating 9 is upper, and N-type batch coating 10 is under, luminescent layer 3
Between two batches coating.Chip also includes two first electrodes 1 and a second electrode 6, two first electrodes 1 distinguish positions with it is outer
Prolong the both ends above layer, second electrode 6 is connected with the lower section of electrically-conductive backing plate 5.First electrode 1 is positive electrode, and second electrode 6 is negative electricity
Pole.
Above-mentioned intermediate structure I epitaxial layer is scratched using laser cutting, it is as shown in Figure 6 to form intermediate structure II；
Above-mentioned intermediate structure II includes intermediate structure I, meanwhile, one of crack is formed among epitaxial layer, by p-type batch coating 9,
N-type batch coating 10 and luminescent layer 3 are divided into two parts.
(2) grooving is carried out to second electrode 6 and electrically-conductive backing plate 5 using cutting machine, it is as shown in Figure 7 forms intermediate structure III；
Above-mentioned intermediate structure III includes intermediate structure II, while the both sides of the bottom of electrically-conductive backing plate 5 and the both sides of second electrode 6 are along Vertical Square
To through there is the first groove 11, the centre of the bottom of electrically-conductive backing plate 5 and the centre of second electrode 6, which are run through, the second groove 12, the
The groove width w of two grooves 12 is 20um.
(3) as shown in figure 8, above-mentioned intermediate structure III is cleaved along Slit bottom to the plan vertical of the second groove 12, by its point
For two parts, two identical LED chip constructions are formed.
The groove that the present invention passes through design so that during encapsulation, conductive silver glue 7 it is recessed to be limited in first because surface tension
At the interior angle of groove 11, chip leak source Problem of Failure caused by effectively avoiding the excess of conductive silver glue 7.
Embodiments of the invention are described in detail above, but the content is only presently preferred embodiments of the present invention,
It is not to be regarded as the practical range for limiting the present invention.All equivalent changes made according to the scope of the invention and improvement etc., all should
Still belong within this patent covering scope.
Claims (7)
- A kind of 1. LED chip construction, it is characterised in that：Including chip, the chip includes electrically-conductive backing plate and positioned at leading Epitaxial layer on electric substrate, the epitaxial layer include p-type batch coating and N-type batch coating, the p-type batch coating and N-type batch coating Between be provided with luminescent layer；The chip also includes first electrode and second electrode, and the first electrode is connected with epitaxial layer top, Second electrode below electrically-conductive backing plate with being connected；The both sides of the electrically-conductive backing plate bottom and the both sides of second electrode are vertically equal Through there is the first groove；Interior angle≤90 ° of first groove.
- 2. LED chip construction according to claim 1, it is characterised in that：Groove depth >=core of first groove The 1/3 of piece gross thickness；Groove width >=10 μm of first groove.
- 3. LED chip construction according to claim 2, it is characterised in that：The groove depth of first groove is core The 1/3 of piece gross thickness；The groove width of first groove is 10 μm；The interior angle of first groove is 90 °.
- A kind of 4. encapsulating structure of light-emitting diode chip for backlight unit, it is characterised in that：Including the chip described in claim 1, the core Package support is provided with below piece, sealing is filled by conductive silver glue between the chip and packing support, the conductive silver glue is filled out Fill height and be limited to the first groove top.
- A kind of 5. intermediate structure for preparing light-emitting diode chip for backlight unit, it is characterised in that：Including chip, the chip includes conductive base Plate and the epitaxial layer on electrically-conductive backing plate, the epitaxial layer include p-type batch coating and N-type batch coating, the p-type batch coating and Luminescent layer is provided between N-type batch coating；The chip also includes two first electrodes and a second electrode, and described two The both ends above epitaxial layer, the second electrode are connected one electrode with electrically-conductive backing plate lower section respectively；Under the electrically-conductive backing plate The both sides in portion and the both sides of second electrode are vertically through there is the first groove, the centre of the electrically-conductive backing plate bottom and the The centre of two electrodes, which is run through, the second groove；Interior angle≤90 ° of first groove.
- 6. intermediate structure according to claim 5, it is characterised in that：Groove width >=20 μm of second groove.
- 7. a kind of preparation method of light-emitting diode chip for backlight unit, it is characterised in that comprise the following steps：(1) intermediate structure of light-emitting diode chip for backlight unit is made, the intermediate structure includes chip, and the chip includes electrically-conductive backing plate With the epitaxial layer on electrically-conductive backing plate, the epitaxial layer includes p-type batch coating and N-type batch coating, the p-type batch coating and N Luminescent layer is provided between type batch coating；The chip also includes two first electrodes and a second electrode, and described two first The both ends above epitaxial layer, the second electrode are connected electrode with electrically-conductive backing plate lower section respectively；Will be outer using laser cutting Prolong layer to scratch, one of crack is formed among the epitaxial layer, p-type batch coating, N-type batch coating and luminescent layer are divided into two portions Point；(2) grooving is carried out to second electrode and electrically-conductive backing plate using cutting machine, forms intermediate structure as claimed in claim 5；(3) intermediate structure is vertically cleaved along Slit bottom to the second groove top, is classified as two parts, form two phases Same LED chip construction as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510710696.1A CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510710696.1A CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105355752A CN105355752A (en) | 2016-02-24 |
| CN105355752B true CN105355752B (en) | 2018-03-02 |
Family
ID=55331678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510710696.1A Active CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105355752B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190084807A (en) * | 2018-01-09 | 2019-07-17 | 서울바이오시스 주식회사 | Light emitting device |
| CN112382709B (en) * | 2020-12-03 | 2022-02-25 | 至芯半导体(杭州)有限公司 | Manufacturing method of anti-crack AlN epitaxial layer |
| CN113921670B (en) * | 2021-09-26 | 2024-04-12 | 天津三安光电有限公司 | Light-emitting element and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101617415A (en) * | 2009-03-27 | 2009-12-30 | 香港应用科技研究院有限公司 | Make the method for thin-film semiconductor structures |
| CN202268387U (en) * | 2011-10-08 | 2012-06-06 | 深圳市极佳光电科技有限公司 | SMD type LED packaging structure |
| CN103258935A (en) * | 2012-02-21 | 2013-08-21 | 隆达电子股份有限公司 | Electronic element connecting base, electronic element module and electronic device manufactured by using same |
| CN103594565A (en) * | 2012-08-16 | 2014-02-19 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05218586A (en) * | 1992-02-04 | 1993-08-27 | Mitsubishi Electric Corp | Semiconductor laser device and manufacture of the same |
| JP2827795B2 (en) * | 1992-02-17 | 1998-11-25 | サンケン電気株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| JP2927158B2 (en) * | 1993-09-29 | 1999-07-28 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP3634538B2 (en) * | 1997-02-27 | 2005-03-30 | シャープ株式会社 | Semiconductor laser device manufacturing method and semiconductor laser device |
| JP6146735B2 (en) * | 2013-03-27 | 2017-06-14 | スタンレー電気株式会社 | Semiconductor light emitting device |
-
2015
- 2015-10-27 CN CN201510710696.1A patent/CN105355752B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101617415A (en) * | 2009-03-27 | 2009-12-30 | 香港应用科技研究院有限公司 | Make the method for thin-film semiconductor structures |
| CN202268387U (en) * | 2011-10-08 | 2012-06-06 | 深圳市极佳光电科技有限公司 | SMD type LED packaging structure |
| CN103258935A (en) * | 2012-02-21 | 2013-08-21 | 隆达电子股份有限公司 | Electronic element connecting base, electronic element module and electronic device manufactured by using same |
| CN103594565A (en) * | 2012-08-16 | 2014-02-19 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105355752A (en) | 2016-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101846110B1 (en) | Led light bar manufacturing method and led light bar | |
| CN204632804U (en) | Wafer-level package LED | |
| CN105355752B (en) | A kind of LED chip construction, encapsulating structure and preparation method thereof | |
| EP2437321A2 (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN102881812B (en) | Manufacturing method for Light emitting diode packaging structure | |
| CN103178188A (en) | Packaging process of white light light-emitting diode (LED) | |
| CN102820384B (en) | The manufacture method of package structure for LED | |
| CN103824926B (en) | A kind of manufacture method of multi-chip LED package body | |
| CN205282504U (en) | SMD white light LED packaging body | |
| CN103325926B (en) | LED packaging structure used in on-board chip and fluorescent powder coating method thereof | |
| CN103000091A (en) | Dispensing gland white-light nixie tube and production process thereof | |
| CN102779912A (en) | Structure of white light emitting diode and manufacturing method thereof | |
| CN102227011B (en) | Reflector cup and method for controlling geometric shape of fluorescent powder layer in LED (light-emitting diode) packaging by using same | |
| CN202564438U (en) | LED packaging structure | |
| CN202013900U (en) | Light-emitting diode (LED) packing structure with base | |
| CN101276832A (en) | LED chip with micro space connected in series through zinc oxide transparent electrodes and manufacturing process thereof | |
| CN105720165B (en) | A kind of production method of White-light LED chip | |
| CN103219329A (en) | Light-emitting diode device and manufacturing method thereof | |
| CN202307890U (en) | Novel integrated high-power LED (light-emitting diode) packaging structure | |
| CN203055360U (en) | Dispensing gland white light nixie tube | |
| CN202120983U (en) | White light diode possessing isolating excitation heat energy structure | |
| CN202332950U (en) | High-power light-emitting diode (LED) packaging structure with even light emitting effects | |
| CN201893339U (en) | Integrated type LED light source | |
| CN204927333U (en) | Base plate of independent reflection cup | |
| TW201306314A (en) | LED chip manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |