CN105355752A - Light-emitting diode chip structure, light-emitting chip packaging structure and preparation method for light-emitting chip - Google Patents
Light-emitting diode chip structure, light-emitting chip packaging structure and preparation method for light-emitting chip Download PDFInfo
- Publication number
- CN105355752A CN105355752A CN201510710696.1A CN201510710696A CN105355752A CN 105355752 A CN105355752 A CN 105355752A CN 201510710696 A CN201510710696 A CN 201510710696A CN 105355752 A CN105355752 A CN 105355752A
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- China
- Prior art keywords
- chip
- groove
- electrode
- light
- backing plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims description 5
- 238000004806 packaging method and process Methods 0.000 title 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 36
- 238000010276 construction Methods 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 12
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000004134 energy conservation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light-emitting diode chip structure. The light-emitting chip structure comprise a chip; the chip comprises a conductive substrate and an epitaxial layer positioned on the conducive substrate; the epitaxial layer comprises a P type cladding layer and an N type cladding layer; a luminous layer is arranged between the P type cladding layer and the N type cladding layer; the chip also comprises a first electrode and a second electrode; the first electrode is connected with the upward side of the epitaxial layer and the second electrode is connected with the downward side of the epitaxial layer; and first grooves penetrate through the two sides of the lower part of the conductive substrate and the two sides of the second electrode in a perpendicular direction separately. The light-emitting diode chip is simple in structure; and due to the design of the grooves, conductive silver adhesive can be limited in the inner corners of the grooves when the light-emitting diode is packaged, so that the problem of electric leakage and failure of the chip caused by excessive usage amount of the silver adhesive is effectively avoided.
Description
Technical field
The present invention relates to a kind of LED chip construction, encapsulating structure and preparation method thereof.
Background technology
LED (light-emitting diode, Light-emittingdiode) industry is one of industry attracted most attention in recent years, be developed so far, LED product has had energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have the advantages such as environmental benefit, is therefore considered to the best light source of new green energy conservation from generation to generation illumination.
In existing vertical version LED structure; because the vertical usual substrate of version is electrically-conductive backing plate; need use conductive silver glue do die bond make chip be energized after can light action (as Fig. 1); wherein; if vertical version chip is when in die bond processing procedure, conductive silver glue quantity is more; because capillarity causes conductive silver glue can climb to chip light emitting layer and causes chip electrical leakage problems (as Fig. 2), and then chip failure can be made, cause product quality and yield to have great loss.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of efficient, safe LED chip construction.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of LED chip construction, it is characterized in that: comprise chip, described chip comprises electrically-conductive backing plate and is positioned at the epitaxial loayer on electrically-conductive backing plate, described epitaxial loayer comprises P type and criticizes coating and N-type criticizes coating, and described P type is criticized coating and N-type and criticized between coating and be provided with luminescent layer; Described chip also comprises the first electrode and the second electrode, and described first electrode is connected with above epitaxial loayer, and the second electrode is connected with below electrically-conductive backing plate; The both sides of described electrically-conductive backing plate bottom and the both sides of the second electrode are vertically all run through the first groove.
Further, described first groove groove depth >=chip gross thickness 1/3; Groove width >=the 10um of described first groove; Interior angle≤90 ° of described first groove.
Preferably, the groove depth of described first groove is 1/3 of chip gross thickness; The groove width of described first groove is 10um; The interior angle of described first groove is 90 °.
The present invention also provides a kind of encapsulating structure of light-emitting diode chip for backlight unit, comprise above-mentioned light-emitting diode chip for backlight unit, described beneath chips is provided with package support, fills sealing between described chip and packing support by conductive silver glue, and the packed height of described conductive silver glue is limited to the first groove top.
Another object of the present invention is to the preparation method that a kind of light-emitting diode chip for backlight unit is provided, comprise the following steps:
(1) the intermediate structure I of a light-emitting diode chip for backlight unit is made, this intermediate structure I comprises chip, described chip comprises electrically-conductive backing plate and is positioned at the epitaxial loayer on electrically-conductive backing plate, described epitaxial loayer comprises P type and criticizes coating and N-type criticizes coating, and described P type is criticized coating and N-type and criticized between coating and be provided with luminescent layer; Described chip also comprises two the first electrodes and second electrode, and described two the first electrodes distinguish the two ends above positions and epitaxial loayer, and described second electrode is connected with below electrically-conductive backing plate.
Use laser cutting to be scratched by the epitaxial loayer of above-mentioned intermediate structure I, form intermediate structure II;
Above-mentioned intermediate structure II comprises intermediate structure I, meanwhile, forms one crack, P type is criticized coating, N-type criticizes coating and luminescent layer is divided into two parts in the middle of epitaxial loayer.
(2) utilize cutting machine to carry out grooving to the second electrode and electrically-conductive backing plate, form intermediate structure III; Described intermediate structure III comprises intermediate structure II, and the both sides of described electrically-conductive backing plate bottom and the both sides of the second electrode are vertically all run through simultaneously the first groove, and the centre of described electrically-conductive backing plate bottom and the centre of the second electrode are run through the second groove.Preferably, the groove width >=20um of the second groove.
(3) along Slit bottom to intermediate structure III described in the vertical splitting of the second groove top, be divided into two parts, formed two identical LED chip construction.
The advantage that the present invention has and good effect are: structure of the present invention is simple, and by the groove of design, when making encapsulation, conductive silver glue because surface tension, can be limited in the interior angle place of groove, effectively avoid the excessive chip electric leakage Problem of Failure caused of elargol.
Accompanying drawing explanation
Fig. 1 is schematic diagram when light-emitting diode chip for backlight unit elargol is inexcessive in prior art
Fig. 2 is schematic diagram when light-emitting diode chip for backlight unit elargol is excessive in prior art
Fig. 3 is the schematic diagram of LED chip construction in the embodiment of the present invention 1
Fig. 4 is LED encapsulation construction schematic diagram in the embodiment of the present invention 2
Fig. 5 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure I in the embodiment of the present invention 3
Fig. 6 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure II in the embodiment of the present invention 3
Fig. 7 is the schematic diagram of light-emitting diode chip for backlight unit intermediate structure III in the embodiment of the present invention 3
Fig. 8 is by the structural representation of vertical for light-emitting diode chip for backlight unit intermediate structure III splitting in the embodiment of the present invention 3
Embodiment
Embodiment 1
As shown in Figure 3, a kind of LED chip construction, comprises chip, and chip comprises electrically-conductive backing plate 5 and is positioned at the epitaxial loayer on electrically-conductive backing plate 5, and epitaxial loayer comprises P type to be criticized coating 9 and N-type and criticize coating 10, P type and criticize coating 9 and N-type and criticize between coating 10 and be provided with luminescent layer 3;
In the present embodiment, P type criticizes coating 9 upper, N-type criticize coating 10 under, luminescent layer 3 is positioned between two batches of coating.
Chip also comprises the first electrode 1 and the second electrode 6, first electrode 1 is connected with above epitaxial loayer, and the second electrode 6 is connected with below electrically-conductive backing plate 5; The both sides of electrically-conductive backing plate 5 bottom and the both sides of the second electrode 6 are vertically all run through the first groove 11.
In the present embodiment, the first electrode 1 is positive electrode, and the second electrode 6 is negative electrode.
The groove depth a of the first groove 11 is 1/3 of chip gross thickness; The groove width b of the first groove 11 is 10um; The interior angle θ of the first groove is 90 °.
Embodiment 2
As shown in Figure 4, an encapsulating structure for light-emitting diode chip for backlight unit, comprises the light-emitting diode chip for backlight unit described in embodiment 1, and beneath chips is provided with package support 8, fill sealing by conductive silver 7 glue between chip and packing support 8, the packed height of conductive silver glue 7 is limited to the first groove 11 top.
Embodiment 3
Prepare a method for LED chip construction in embodiment 1, comprise the following steps:
(1) the intermediate structure I of a light-emitting diode chip for backlight unit is made, this intermediate structure I as shown in Figure 5, comprise chip, the epitaxial loayer that chip comprises electrically-conductive backing plate 5 and is positioned on electrically-conductive backing plate 5, epitaxial loayer comprises P type to be criticized coating 9 and N-type and criticizes coating 10, P type and criticize coating 9 and N-type and criticize between coating 10 and be provided with luminescent layer 3; P type criticizes coating 9 upper, N-type criticize coating 10 under, luminescent layer 3 is positioned between two batches of coating.Chip also comprises two the first electrodes 1 and second electrode 6, two the first electrodes 1 two ends respectively above positions and epitaxial loayer, and the second electrode 6 is connected with below electrically-conductive backing plate 5.First electrode 1 is positive electrode, and the second electrode 6 is negative electrode.
Use laser cutting to be scratched by the epitaxial loayer of above-mentioned intermediate structure I, form intermediate structure II as shown in Figure 6;
Above-mentioned intermediate structure II comprises intermediate structure I, meanwhile, forms one crack, P type is criticized coating 9, N-type criticizes coating 10 and luminescent layer 3 is divided into two parts in the middle of epitaxial loayer.
(2) utilize cutting machine to carry out grooving to the second electrode 6 and electrically-conductive backing plate 5, form intermediate structure III as shown in Figure 7; Above-mentioned intermediate structure III comprises intermediate structure II, the both sides of electrically-conductive backing plate 5 bottom and the both sides of the second electrode 6 are vertically all run through simultaneously the first groove 11, the centre of electrically-conductive backing plate 5 bottom and the centre of the second electrode 6 are run through has the groove width w of the second groove 12, second groove 12 to be 20um.
(3) as shown in Figure 8, along Slit bottom to the above-mentioned intermediate structure III of the second groove 12 plan vertical splitting, be divided into two parts, formed two identical LED chip construction.
The present invention is by the groove of design, and when making encapsulation, conductive silver glue 7 because surface tension, can be limited in the interior angle place of the first groove 11, effectively avoid the excessive chip leak source Problem of Failure caused of conductive silver glue 7.
Above embodiments of the invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the scope of the invention change and improve, and all should still belong within this patent covering scope.
Claims (9)
1. a LED chip construction, it is characterized in that: comprise chip, described chip comprises electrically-conductive backing plate and is positioned at epitaxial loayer on electrically-conductive backing plate, and described epitaxial loayer comprises P type and criticizes coating and N-type criticizes coating, and described P type is criticized coating and N-type and criticized between coating and be provided with luminescent layer; Described chip also comprises the first electrode and the second electrode, and described first electrode is connected with above epitaxial loayer, and the second electrode is connected with below electrically-conductive backing plate; The both sides of described electrically-conductive backing plate bottom and the both sides of the second electrode are vertically all run through the first groove.
2. LED chip construction according to claim 1, is characterized in that: 1/3 of the groove depth >=chip gross thickness of described first groove; Groove width >=the 10um of described first groove; Interior angle≤90 ° of described first groove.
3. LED chip construction according to claim 2, is characterized in that: the groove depth of described first groove is 1/3 of chip gross thickness; The groove width of described first groove is 10um; The interior angle of described first groove is 90 °.
4. the encapsulating structure of a light-emitting diode chip for backlight unit, it is characterized in that: comprise chip according to claim 1, described beneath chips is provided with package support, fills sealing between described chip and packing support by conductive silver glue, and the packed height of described conductive silver glue is limited to the first groove top.
5. prepare the intermediate structure of light-emitting diode chip for backlight unit for one kind, it is characterized in that: comprise chip, described chip comprises electrically-conductive backing plate and is positioned at epitaxial loayer on electrically-conductive backing plate, and described epitaxial loayer comprises P type and criticizes coating and N-type criticizes coating, and described P type is criticized coating and N-type and criticized between coating and be provided with luminescent layer; Described chip also comprises two the first electrodes and second electrode, and described two the first electrodes distinguish the two ends above positions and epitaxial loayer, and described second electrode is connected with below electrically-conductive backing plate.
6. intermediate structure according to claim 5, is characterized in that: form one crack in the middle of described epitaxial loayer, P type is criticized coating, N-type criticizes coating and luminescent layer is divided into two parts.
7. intermediate structure according to claim 5, it is characterized in that: the both sides of described electrically-conductive backing plate bottom and the both sides of the second electrode are vertically all run through the first groove, the centre of described electrically-conductive backing plate bottom and the centre of the second electrode are run through the second groove.
8. intermediate structure according to claim 7, is characterized in that: the groove width >=20um of described second groove.
9. a preparation method for light-emitting diode chip for backlight unit, is characterized in that, comprises the following steps:
(1) make the intermediate structure of light-emitting diode chip for backlight unit as claimed in claim 5, use laser cutting to be scratched by epitaxial loayer, form intermediate structure as claimed in claim 6;
(2) utilize cutting machine to carry out grooving to the second electrode and electrically-conductive backing plate, form intermediate structure as claimed in claim 7;
(3) along Slit bottom to intermediate structure described in the vertical splitting of the second groove top, be divided into two parts, formed two identical LED chip construction as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510710696.1A CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510710696.1A CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105355752A true CN105355752A (en) | 2016-02-24 |
| CN105355752B CN105355752B (en) | 2018-03-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510710696.1A Active CN105355752B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip construction, encapsulating structure and preparation method thereof |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249438A (en) * | 2018-01-09 | 2019-09-17 | 首尔伟傲世有限公司 | Light emitting device |
| CN112382709A (en) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | Manufacturing method of anti-crack AlN epitaxial layer |
| CN113921670A (en) * | 2021-09-26 | 2022-01-11 | 天津三安光电有限公司 | Light emitting element and method for manufacturing the same |
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| JPH07106631A (en) * | 1993-09-29 | 1995-04-21 | Sanken Electric Co Ltd | Semiconductor light emission element |
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| CN103594565A (en) * | 2012-08-16 | 2014-02-19 | 奇力光电科技股份有限公司 | Method for manufacturing light emitting diode |
| JP2014192288A (en) * | 2013-03-27 | 2014-10-06 | Stanley Electric Co Ltd | Semiconductor light-emitting device |
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2015
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN112382709A (en) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | Manufacturing method of anti-crack AlN epitaxial layer |
| CN113921670A (en) * | 2021-09-26 | 2022-01-11 | 天津三安光电有限公司 | Light emitting element and method for manufacturing the same |
| CN113921670B (en) * | 2021-09-26 | 2024-04-12 | 天津三安光电有限公司 | Light-emitting element and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105355752B (en) | 2018-03-02 |
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