CN103594565A - Method for manufacturing light emitting diode - Google Patents

Method for manufacturing light emitting diode Download PDF

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Publication number
CN103594565A
CN103594565A CN201210459218.4A CN201210459218A CN103594565A CN 103594565 A CN103594565 A CN 103594565A CN 201210459218 A CN201210459218 A CN 201210459218A CN 103594565 A CN103594565 A CN 103594565A
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China
Prior art keywords
layer
epitaxial structure
epitaxial
reflector
passage
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Chinese (zh)
Inventor
林忠欣
吴奇隆
邱信嘉
张瑞君
朱长信
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Foshan Qiming Photoelectric Co ltd
Chi Mei Lighting Technology Corp
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Foshan Qiming Photoelectric Co ltd
Chi Mei Lighting Technology Corp
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Publication of CN103594565A publication Critical patent/CN103594565A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a method for manufacturing a light emitting diode, which comprises the steps of forming an epitaxial structure on an epitaxial substrate; forming a protective layer on the epitaxial structure; removing part of the protective layer, the epitaxial structure and the epitaxial substrate to form at least one channel; forming a planarization layer on the channel and the passivation layer; removing the planarization layer and the protective layer on the epitaxial structure; forming a reflective layer on the epitaxial structure; forming a first bonding layer on the reflective layer; providing a conductive substrate, forming a second bonding layer on the conductive substrate, and bonding the conductive substrate on the reflecting layer through the first bonding layer and the second bonding layer; separating the epitaxial substrate and the epitaxial structure; and forming an isolation trench in the epitaxial structure, wherein the isolation trench exposes the reflective layer.

Description

The manufacture method of light-emitting diode
Technical field
The present invention relates to a kind of manufacture method, particularly relate to a kind of manufacture method of light-emitting diode.
Background technology
Light-emitting diode is a kind of light-emitting component being formed by semi-conducting material manufacturing, there is the advantages such as power consumption is low, component life is long, reaction speed is fast, add the little characteristic of easily making minimum or arrayed elements of volume, therefore in recent years along with technology is constantly progressive, its range of application has also even expanded lighting field to by indicator light, backlight.
Please refer to shown in Fig. 1, it is existing a kind of schematic flow sheet of making light-emitting diode.First, form the epitaxial structure 12 with a n-GaN layer 121, a multiple quantum trap layer 122 and a p-GaN layer 123 on an epitaxial substrate 11, then, interval forms has a mask layer 13 of nickel and a photoresist layer 14 on epitaxial structure 12.Wherein, the mask layer 13 with nickel material can be protected epitaxial structure 12, avoids follow-up manufacture craft to be damaged to epitaxial structure 12.
Then, between mask layer 13 and photoresist layer 14, with etching mode, remove part epitaxial structure 12, until expose epitaxial substrate 11, to form the exhaust passage of light-emitting diode, and go out the light-emitting diode of single through exhaust passage definable.Afterwards, remove mask layer 13 and photoresist layer 14, and form a reflector 15 and a knitting layer 16 on epitaxial structure 12 in the mode of evaporation.Then, an electrically-conductive backing plate 17 is engaged on knitting layer 16, and with Laser Focusing in the n-GaN layer 121 being connected with epitaxial substrate 11, make epitaxial substrate 11 and epitaxial structure 12 peel off (lift-off).Next, form respectively two electrodes 18 in relative both sides, wherein, an electrode 18 is arranged on n-GaN layer 121, and another electrode 18 is arranged under electrically-conductive backing plate 17.Finally, then in the mode of cutting form a plurality of LED core.
In the manufacturing process of above-mentioned light-emitting diode, setting due to exhaust passage between two light-emitting diodes, so the surrounding in reflector 15 is exposed in air, the easy impact because of chemical agent and high temperature in follow-up manufacture craft, make the edge in reflector 15 have deteriorated and impaired situation to produce, cause the reflectivity of light-emitting diode to decline.
In addition, in the technology of another existing making light-emitting diode, exhaust passage is not set on epitaxial structure, but reflector and knitting layer are being set after complete epitaxial structure, mode with laser focuses on the n-GaN layer being connected with epitaxial substrate, epitaxial substrate and epitaxial structure glass are peeled off, finally in etched mode, removed part epitaxial structure, reflector, knitting layer and electrically-conductive backing plate again, to define the light-emitting diode of single.Although the reflector in this manufacturing technology can be protected preferably; and being not easy deteriorated and impaired situation produces; but on the other hand; due to exhaust passage not being set in epitaxial structure; therefore; the stress of epitaxial structure cannot be discharged; make epitaxial structure easily produce warping phenomenon; therefore when with Laser Focusing in the n-GaN of epitaxial structure layer during with separated epitaxial structure and epitaxial substrate, the gas that the stress of epitaxial structure and n-GaN dissociate easily makes the edge break of epitaxial structure and impaired.
Therefore, how providing a kind of manufacture method of light-emitting diode, can improve the deteriorated impaired situation in epitaxial structure and reflector, is the target of dealer's effort always.
Summary of the invention
Because above-mentioned problem, the object of the present invention is to provide a kind of manufacture method of light-emitting diode, can reduce the deteriorated impaired situation in epitaxial structure warpage and reflector, to guarantee the integrality in epitaxial structure and reflector, and then quality and the luminous efficiency of raising Integral luminous diode.
In order to achieve the above object, the manufacture method that the invention provides a kind of light-emitting diode comprises and forms an epitaxial structure on an epitaxial substrate; Form a protective layer on epitaxial structure; Remove partial protection layer, epitaxial structure and epitaxial substrate, to form at least one passage; Form a planarization layer on passage and protective layer; Remove planarization layer and protective layer on epitaxial structure; Form a reflector on epitaxial structure; Form one first knitting layer on reflector; One electrically-conductive backing plate is provided; Form one second knitting layer on electrically-conductive backing plate, and see through the first knitting layer with the second knitting layer to engage electrically-conductive backing plate on reflector; Separated epitaxial substrate and epitaxial structure; And forming an isolated groove in epitaxial structure, isolated groove exposes reflector.
In order to achieve the above object, the manufacture method that the invention provides a kind of light-emitting diode comprises and forms an epitaxial structure on an epitaxial substrate; Form a reflector on epitaxial structure; Remove part epitaxial structure and epitaxial substrate, to form at least one passage; Form a planarization layer on passage and epitaxial structure; Remove the planarization layer on epitaxial structure; Form a reflector on epitaxial structure; Form one first knitting layer on reflector; One electrically-conductive backing plate is provided; Form one second knitting layer on electrically-conductive backing plate, and see through the first knitting layer with the second knitting layer to engage electrically-conductive backing plate on reflector; Separated epitaxial substrate and epitaxial structure and form an isolated groove in epitaxial structure, isolated groove exposes reflector.
In a preferred embodiment of the present invention, epitaxial structure has one first semiconductor layer, an active layer and one second semiconductor layer.
In a preferred embodiment of the present invention, remove partial protection layer, epitaxial structure and epitaxial substrate, with Ear Mucosa Treated by He Ne Laser Irradiation protective layer, epitaxial structure and epitaxial substrate.
In a preferred embodiment of the present invention, remove part epitaxial structure and epitaxial substrate, with Ear Mucosa Treated by He Ne Laser Irradiation epitaxial structure and epitaxial substrate.
In a preferred embodiment of the present invention, see through a dry ecthing manufacture craft removal and be positioned at the planarization layer on protective layer.
In a preferred embodiment of the present invention, see through a wet etching manufacture craft removal and be positioned at the planarization layer on epitaxial structure.
In a preferred embodiment of the present invention, see through a cmp manufacture craft removal and be positioned at the planarization layer on epitaxial structure.
In a preferred embodiment of the present invention, reflector is through evaporation and alloy manufacture craft, to be formed on epitaxial structure.
In a preferred embodiment of the present invention, the first knitting layer and the second knitting layer are formed at respectively on reflector and electrically-conductive backing plate in evaporation mode.
In a preferred embodiment of the present invention, the first knitting layer and the second knitting layer are respectively complex metal layer.
In a preferred embodiment of the present invention, before the step of separated epitaxial substrate and epitaxial structure, also comprise grinding and polishing mode attenuate epitaxial substrate.
In a preferred embodiment of the present invention, to grind and polishing mode attenuate epitaxial substrate.
In a preferred embodiment of the present invention, before the step of formation isolated groove or after forming the step of isolated groove, also comprise the planarization layer that removes passage.
In a preferred embodiment of the present invention, form before the step of isolated groove, also comprise and form a mask layer in epitaxial structure.
In a preferred embodiment of the present invention, form the step of isolated groove, with etching mode, carry out.
In a preferred embodiment of the present invention, isolated groove and passage are positioned at same position.
In a preferred embodiment of the present invention, with the LED core of single of isolated groove definition.
In a preferred embodiment of the present invention, manufacture method also comprises that formation one current spreading layer is on epitaxial structure.
In a preferred embodiment of the present invention, manufacture method also comprises and forms one first electrode on epitaxial structure and form one second electrode in electrically-conductive backing plate.
In a preferred embodiment of the present invention, planarization layer fills up passage.
In a preferred embodiment of the present invention, the width of isolated groove is greater than the width of passage.
From the above, the manufacture method of light-emitting diode of the present invention forms an epitaxial structure on an epitaxial substrate, and removes after part epitaxial structure and epitaxial substrate, to form at least one passage, then form a planarization layer in passage, make in passage, to there is planarization layer.Thus, when seeing through Laser Focusing with separated epitaxial substrate and epitaxial structure, the produced gas that dissociates is because of the stopping of the planarization layer in passage, the contiguous epitaxial structure of gas damage of can avoiding dissociating.In addition, in follow-up manufacture craft, the stress that epitaxial structure produces also can see through passage and be discharged, and can avoid epitaxial structure to produce warping phenomenon and make its edge break and impaired.In addition; manufacture method of the present invention is when dicing die; just cut and wear reflector and knitting layer; accordingly in making the process of light-emitting diode; can reduce the area that reflector contacts with air; effectively protection reflector, avoids producing deteriorated situation because chemical agent makes reflector, and then improves the quality of light-emitting diode and extend its life-span.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of existing making light-emitting diode;
Fig. 2 A is the flow chart of a kind of LED production method of preferred embodiment of the present invention;
Fig. 2 B is another flow chart of manufacture method of the light-emitting diode of preferred embodiment of the present invention;
Fig. 3 A to Fig. 3 M is respectively the manufacturing process schematic diagram of light-emitting diode of the present invention;
Fig. 4 is another manufacture method flow chart of a kind of light-emitting diode of preferred embodiment of the present invention; And
Fig. 5 A to Fig. 5 C is respectively another schematic diagram of the manufacturing process of light-emitting diode of the present invention.
Main element symbol description
11,21: epitaxial substrate
12,22: epitaxial structure
121:n-GaN layer
122: multiple quantum trap layer
123:p-GaN layer
13, R: mask layer
14: photoresist layer
15,26: reflector
16: knitting layer
17,28: electrically-conductive backing plate
18: electrode
221: the first semiconductor layers
222: active layer
223: the second semiconductor layers
23: protective layer
24: passage
25: planarization layer
27: the first knitting layers
29: the second knitting layers
30: current spreading layer
31: the first electrodes
32: the second electrodes
S01～S13, S031, S041, S051: step
T: isolated groove
Embodiment
Hereinafter with reference to relevant drawings, the manufacture method according to a kind of light-emitting diode of preferred embodiment of the present invention is described, wherein identical element is illustrated the reference marks with identical.
Please respectively with reference to shown in Fig. 2 A, Fig. 3 A to Fig. 3 M, wherein, the manufacture method flow chart of a kind of light-emitting diode that Fig. 2 A is preferred embodiment of the present invention, and Fig. 3 A to Fig. 3 M is respectively the manufacturing process schematic diagram of light-emitting diode of the present invention.
The manufacture method of light-emitting diode of the present invention comprises that step S01 is to step S10.
In step S01, as shown in Figure 3A, form an epitaxial structure 22 on an epitaxial substrate 21.It is example that the epitaxial substrate 21 of the present embodiment be take sapphire substrate (Sapphire).Certainly, epitaxial substrate 21 can also be carborundum, aluminium oxide, gallium nitride, glass, quartz, gallium phosphide or GaAs substrate etc.Wherein, the main epitaxy method that forms epitaxial structure 22 has liquid phase epitaxial method (Liquid PhaseEpitaxy, LPE), vapour phase epitaxy method (Vapor Phase Epitaxy, VPE) and organic metal vapour phase epitaxy method (Metal-organic Chemical Vapor Deposition, MOCVD), do not limited.
In addition, epitaxial structure 22 is with material energy gap, and conventional III family-group Ⅴ element forms large to being divided into four classes, is respectively: GaP/GaAsP is serial, AlGaAs is serial, AlGaInP is serial and GaN series.At this, epitaxial structure 22 take that to have one first semiconductor layer 221, an active layer 222 and one second semiconductor layer 223 be example.Close epitaxial substrate 21 is to be sequentially the first semiconductor layer 221, active layer 222 and the second semiconductor layer 223 away from epitaxial substrate 21.The first semiconductor layer 221 and the second semiconductor layer 223 have different electrically, and when the first semiconductor layer 221 is P type, the second electrical semiconductor layer 223 is N-type; And when 221 layers of the first semiconductors are N-type, the second 223 of semiconductor layers are P type.At this, the first semiconductor layer 221 is n type gallium nitride (GaN), and active layer 222 is multiple quantum trap (Multiple quantum-well, MQW) structure, and the second semiconductor layer 223 to take P type gallium nitride be example.
In step S02, form a protective layer 23 on epitaxial structure 22.At this, for example, in the upper surface deposition layer of oxide layer (silicon dioxide) of epitaxial structure 22, the protective layer (maybe can claim stop-layer) of usining as subsequent etch manufacture craft.
In step S03, as shown in Figure 3 B, remove partial protection layer 23, epitaxial structure 22 and epitaxial substrate 21, to form at least one passage 24.At this, to remove partial protection layer 23, part epitaxial structure 22 and part epitaxial substrate 21 with laser manufacturing process, to form at least one passage 24.In more detail; step S03 is upper surface irradiation protective layer 23, epitaxial structure 22 and the epitaxial substrate 21 by protective layer 23 with laser cutting machine for example; drawing by Fig. 3 B; the upper surface of self-insurance sheath 23 from top to bottom; with Ear Mucosa Treated by He Ne Laser Irradiation and cut protective layer 23, epitaxial structure 22 and part epitaxial substrate 21; but do not cut completely, do not wear epitaxial substrate 21, form thus at least one passage 24 between protective layer 23, epitaxial structure 22 and epitaxial substrate 21.
It should be noted that; with the stacked direction of vertical epitaxial structure 22 in fact; step S03 removes partial protection layer 23, epitaxial structure 22 and epitaxial substrate 21; wherein; remove the thickness range of part epitaxial substrate 21 not for limiting the present invention, can be according to the difference of embodiment, and remove the epitaxial substrate 21 of different-thickness; such as but not limited to 3 μ m or 5 μ m etc., take not cut and wear epitaxial substrate 21 as best.In addition, the words of overlooking direction by Fig. 3 B, as shown in Figure 3 C, the passage 24 of the present embodiment can be formed at default LED core around, and take and form at least one polygon as example, however non-limiting the use of in the present invention, in other embodiments, can be different according to the environment of design and application, and passage is formed to different size and shape, as rectangle or circle etc.In addition, as shown in Figure 3 D, also can in the surrounding of LED core, cut the passage 24 in twice Huo San road, thus, can improve the stability of follow-up peeling off (lift-off) manufacture craft.
Then,, in step S04, as shown in Fig. 3 E, form a planarization layer 25 on passage 24 and protective layer 23.In the present embodiment, with spin-on glasses (Spin-on glass, SOG) manufacture craft, liquid silicon dioxide is formed in passage 24 and on protective layer 23, thus, makes to there is planarization layer 25 in passage 24 and on protective layer 23.Wherein, spin coating manufacture craft can increase the flatness of chip, makes follow-up manufacture craft smooth.It should be noted that planarization layer 25 must fill up passage 24 completely, so, just have enough intensity to stop the gas that dissociates in follow-up substrate removes manufacture craft, the gas injury of avoiding dissociating is to contiguous chip.In other embodiments, planarization layer 25 also can be a macromolecular material (being for example polyimide).
In addition, in step S05, as shown in Fig. 3 F, remove planarization layer 25 and protective layer 23 on epitaxial structure 22.At this, see through an inductively coupled plasma ion(ic) etching (InductivelyCoupled Plasma Reactive Ion Etch, ICP-RIE) technology and carry out dry ecthing, to remove the planarization layer 25 being positioned on protective layer 23.It should be noted that; conventionally inductively coupled plasma ion(ic) etching easily damages the surface of epitaxial structure 22; and cause the electric characteristic abnormality of light-emitting diode; in this embodiment; cause due to protective layer 23; till dry ecthing will only be etched to protective layer 23, can't damage the surface of epitaxial structure 22.Then, then protective layer 23 is removed, to expose epitaxial structure 22.Wherein, as shown in Fig. 3 F, planarization layer 25 forms a plane with epitaxial structure 22.In addition, removing the planarization layer 25 being positioned on epitaxial structure 22 also can use cmp (chemicalmechanical polishing, CMP) manufacture craft to reach with protective layer 23.
In step S06, as shown in Fig. 3 G, form a reflector 26 on epitaxial structure 22.Wherein, via electron gun (E-Gun) evaporation or sputter (sputter) manufacture craft, reflector 26 is arranged on epitaxial structure 22, and in the temperature of 325～550 ℃, carry out alloy (annealing) step, see through alloy step and with heat, reduce the contact resistance in 26, epitaxial structure 22 and reflector, and can improve the reflectivity of the 26 pairs of light in reflector.In addition, the reflector 26 of the present embodiment is composite bed, and the material in reflector 26 can be sequentially nickel/silver/nickel/platinum/gold or nickel/silver/titanium/platinum/gold according to evaporation order.
Then, execution step S07, to form one first knitting layer 27 on reflector 26.The first knitting layer 27 is also formed on reflector 26 in evaporation mode.First knitting layer 27 of the present embodiment is also complex metal layer, and its material is for example sequentially chromium/platinum/gold or titanium/platinum/gold.Wherein, chromium or titanium are as the use of following with reflector 26, platinum as barrier layer in order to stop chromium and gold atom to spread mutually, golden be the joint in order to follow-up manufacture craft.
In addition, in step S08, as shown in Fig. 3 H and Fig. 3 I, provide an electrically-conductive backing plate 28, and form one second knitting layer 29 on electrically-conductive backing plate 28, and see through the first knitting layer 27 with the second knitting layer 29 to engage electrically-conductive backing plate 28 on reflector 26.In more detail, first by the second knitting layer 29, the mode with for example evaporation is formed on electrically-conductive backing plate 28, then the second knitting layer 29 is engaged in to the first knitting layer 27, so that electrically-conductive backing plate 28 can be engaged in reflector 26.Wherein, the material of the second knitting layer 29 is sequentially chromium/platinum/gold or titanium/platinum/gold, see through and with the gold heating pressurization of the second knitting layer 29, the first knitting layer 27 is engaged with the second knitting layer 29 gold of the first knitting layer 27, therefore, the undermost material of the second knitting layer 29 is gold, and the material of the superiors of the first knitting layer 27 is also gold.
Engaging electrically-conductive backing plate 28 after reflector 26 and before carrying out next step S09, as shown in Fig. 3 J, manufacture method also can comprise attenuate epitaxial substrate 21.The present embodiment reduces the thickness of epitaxial substrate 21 with manufacture crafts such as grinding and polishings.Originally the thickness of epitaxial substrate 21 is about 440 μ m, can first epitaxial substrate 21 be ground to 50～100 μ m, finally with polishing manufacture craft, epitaxial substrate 21 is thinned to 20～40 μ m again.
Then, then perform step S09, separated epitaxial substrate 21 and epitaxial structure 22(figure do not show).The present embodiment with Laser Focusing in the first semiconductor layer 221 of epitaxial structure 22 side near epitaxial substrate 21, see through Laser Focusing the first semiconductor layer 221 of part that dissociates, with separated epitaxial substrate 21 and epitaxial structure 22.Due to, with Laser Focusing, in semiconductor layer, cause while dissociating and can produce gas, but because of the planarization layer 25(in passage 24 for example silicon dioxide or macromolecular material) can be as the barrier layer of these gases, therefore, the contiguous epitaxial structure 22 of gas damage of can avoiding dissociating.In addition, owing to forming passage 24 with laser in epitaxial structure 22 and epitaxial substrate 21 in advance in the present embodiment, so can discharge the stress that forms epitaxial structure 22, and alleviate the warpage issues of epitaxial substrate 21 and epitaxial structure 22, so when execution step S09, while using separation by laser epitaxial structure 22 and epitaxial substrate 21, also can avoid because the poor focusing that warpage causes, and cause the problem of separated epitaxial substrate 21 and epitaxial structure 22 failures.
After step S09 and before execution step S10, as shown in Fig. 3 K, also can form a mask layer R on epitaxial structure 22.In Fig. 3 K, the structure after separated epitaxial substrate 21 is spun upside down, electrically-conductive backing plate 28 is positioned under epitaxial structure 22.Wherein, mask layer R can see through photoetching, evaporation and float off manufacture crafts such as (lift-off) and be arranged at intervals at epitaxial structure 22, and passage 24(figure does not show) between mask layer R, not masked layer R covers.At this, the material of mask layer R is for example to comprise titanium, nickel or both combinations.
Then,, in step S10, as shown in Fig. 3 K, form an isolated groove T in epitaxial structure 22, and isolated groove T exposes reflector 26.In more detail, can utilize etching process and take mask layer R as etching mask, to remove the not masked layer part epitaxial structure 22 that R was covered, until expose reflector 26, and be formed at the isolated groove T of follow-up definable LED core, afterwards, then remove mask layer R.In the present embodiment, because passage 24 is between mask layer R, that is with etching mode, remove part epitaxial structure 22 by passage 24, and then formation isolated groove T, therefore, the position of isolated groove T is in fact corresponding to the position of passage 24, and the width of isolated groove T is greater than the width of passage 24.
The formation that sees through isolated groove T can define the LED core of single.With vertical direction, isolated groove T cuts and wears epitaxial structure 22 until expose portion reflector 26.Wherein, etched technology can be inductively coupled plasma ion(ic) etching.It is worth mentioning that to there is planarization layer 25 in the passage 24 due to original Fig. 3 J, therefore, before or after forming the step S10 of isolated groove T, can see through for example wet etching and remove the planarization layer 25 in passage 24.
In addition, please refer to shown in Fig. 2 B another flow chart of the manufacture method of its light-emitting diode that is preferred embodiment of the present invention.The manufacture method of light-emitting diode of the present invention also can comprise that step S11 is to step S13.
In step S11, as shown in Fig. 3 L, form a current spreading layer 30 on epitaxial structure 22.The mode of wherein, can photoetching, evaporation and floating off manufacture craft forms current spreading layer 30.The current spreading layer 30 of the present embodiment is the nesa coating of an indium tin oxide (ITO).
Then,, in step S12, form one first electrode 31 on epitaxial structure 22 and form one second electrode 32 in electrically-conductive backing plate 28.In more detail, the first electrode 31 and the second electrode 32 are arranged at respectively the relative both sides of light-emitting diode, and the first electrode 31 is formed in current spreading layer 30; And the second electrode 32 is formed under electrically-conductive backing plate 28.Wherein, the first electrode 31 and the second electrode 32 also can be complex metal layer, and its material can be titanium/platinum/gold or chromium/platinum/gold.
Finally, in step S 13, as shown in Fig. 3 M, cutting light-emitting diode is to form a plurality of LED core.At this, light-emitting diode is a vertically conducting LED.
Please refer to shown in Fig. 4 another manufacture method flow chart of its a kind of light-emitting diode that is preferred embodiment of the present invention.
Different being that the flow chart of Fig. 4 is main from Fig. 2 B; in the manufacturing process of the light-emitting diode of Fig. 4; do not form a protective layer (without Fig. 2 B step S02) on epitaxial structure 22; but after step S01; execution step S031, as shown in Figure 5A, step S031 is on epitaxial structure 22 and epitaxial substrate 21; remove part epitaxial structure 22 and epitaxial substrate 21, to form at least one passage 24.In other words,, equally with Ear Mucosa Treated by He Ne Laser Irradiation and cut epitaxial structure 22 and part epitaxial substrate 21, but do not cut completely, do not wear epitaxial substrate 21, form thus at least one passage 24 between epitaxial structure 22 and epitaxial substrate 21.
In addition, in the step S041 of Fig. 4, as shown in Figure 5 B, form a planarization layer 25 and (between planarization layer 25 and epitaxial structure 22, do not have protective layer) on passage 24 and epitaxial structure 22.The forming process of planarization layer 25 can be with reference to above-mentioned steps S04.
Then, in the step S051 of Fig. 4, (Fig. 5 C is identical with Fig. 3 F) as shown in Figure 5 C, removes the planarization layer 25 on epitaxial structure 22, and makes to possess in passage 24 planarization layer 25.At this, planarization layer 25 must fill up passage 24 completely, so, just has enough intensity to stop the gas that dissociates in follow-up substrate removes manufacture craft, and the gas injury of avoiding dissociating is to contiguous chip.Planarization layer 25 for example can be a macromolecular material; and can for example with buffer oxide silicon etching liquid (Buffered OxideEtchant), remove (wet etching); it should be noted that; in this embodiment owing to adopting buffer oxide silicon etching liquid to remove the planarization layer 25 being positioned on epitaxial structure 22 in the mode of wet etching; this kind of etching solution can produce reaction to epitaxial structure 22 hardly, so can not be used in the surface that protective layer protection epitaxial structure 22 is set between epitaxial structure 22 and planarization layer 25.In addition, removing planarization layer 25 also can reach by cmp manufacture craft.
In addition, the step S01 of Fig. 4, step S06 can, with reference to above-mentioned, not repeat them here to step S13.
In sum, the manufacture method of light-emitting diode of the present invention forms an epitaxial structure on an epitaxial substrate, and removes after part epitaxial structure and epitaxial substrate, to form at least one passage, then form a planarization layer in passage, make in passage, to there is planarization layer.Thus, when seeing through Laser Focusing with separated epitaxial substrate and epitaxial structure, the produced gas that dissociates is because of the stopping of the planarization layer in passage, the contiguous epitaxial structure of gas damage of can avoiding dissociating.In addition, the stress that epitaxial structure produces also can see through passage and be discharged, and can alleviate epitaxial structure and produce warping phenomenon, when using separation by laser epitaxial structure and epitaxial substrate, can avoid the poor focusing causing because of warpage, and cause the problem of separated epitaxial substrate and epitaxial structure failure.In addition; manufacture method of the present invention is when dicing die; just cut and wear reflector and knitting layer; accordingly in making the process of light-emitting diode; can reduce the area that reflector contacts with air; effectively protection reflector, avoids producing deteriorated situation because chemical agent makes reflector, and then improves the quality of light-emitting diode and extend its life-span.
The foregoing is only illustrative, but not be restricted person.Anyly do not depart from spirit of the present invention and category, and the equivalent modifications that it is carried out or change all should be contained in appended claim.

Claims (15)

1. a manufacture method for light-emitting diode, comprising:
Form an epitaxial structure on an epitaxial substrate;
Form a protective layer on this epitaxial structure;
Remove this protective layer of part, this epitaxial structure and this epitaxial substrate, to form at least one passage;
Form a planarization layer on this passage and this protective layer, wherein this planarization layer fills up this passage;
Remove this planarization layer and this protective layer on this epitaxial structure;
Form a reflector on this epitaxial structure;
Form one first knitting layer on this reflector;
One electrically-conductive backing plate is provided;
Form one second knitting layer on this electrically-conductive backing plate, and see through this first knitting layer with this second knitting layer to engage this electrically-conductive backing plate on this reflector;
Separated this epitaxial substrate and this epitaxial structure; And
Form an isolated groove in this epitaxial structure, this isolated groove exposes this reflector.
2. a manufacture method for light-emitting diode, comprising:
Form an epitaxial structure on an epitaxial substrate;
Remove this epitaxial structure of part and this epitaxial substrate, to form at least one passage;
Form a planarization layer on this passage and this epitaxial structure, wherein this planarization layer fills up this passage;
Remove this planarization layer on this epitaxial structure;
Form a reflector on this epitaxial structure;
Form one first knitting layer on this reflector;
One electrically-conductive backing plate is provided;
Form one second knitting layer on this electrically-conductive backing plate, and see through this first knitting layer with this second knitting layer to engage this electrically-conductive backing plate on this reflector;
Separated this epitaxial substrate and this epitaxial structure; And
Form an isolated groove in this epitaxial structure, this isolated groove exposes this reflector.
3. manufacture method as claimed in claim 1 or 2, wherein this epitaxial structure has the first semiconductor layer, active layer and the second semiconductor layer.
4. manufacture method as claimed in claim 1 or 2, wherein removes this epitaxial structure of part and this epitaxial substrate, with this epitaxial structure of Ear Mucosa Treated by He Ne Laser Irradiation and this epitaxial substrate.
5. manufacture method as claimed in claim 1 or 2, is wherein positioned at this planarization layer on this protective layer through an etching or the removal of cmp manufacture craft.
6. manufacture method as claimed in claim 1 or 2, wherein this reflector is through evaporation and alloy manufacture craft, to be formed on this epitaxial structure.
7. manufacture method as claimed in claim 1 or 2, wherein this first knitting layer and this second knitting layer are formed at respectively on this reflector and this electrically-conductive backing plate in evaporation mode.
8. manufacture method as claimed in claim 1 or 2, wherein, before the step of separated this epitaxial substrate and this epitaxial structure, also comprises:
To grind and this epitaxial substrate of polishing mode attenuate.
9. manufacture method as claimed in claim 1 or 2, before wherein forming the step of this isolated groove or after forming the step of this isolated groove, also comprises:
Remove this planarization layer of this passage.
10. manufacture method as claimed in claim 1 or 2, wherein forms the step of this isolated groove, with etching mode, carries out.
11. manufacture methods as claimed in claim 1 or 2, wherein this isolated groove and this passage are positioned at same position.
12. manufacture methods as claimed in claim 1 or 2, wherein define the LED core of single with this isolated groove.
13. manufacture methods as claimed in claim 1 or 2, also comprise:
Form a current spreading layer on this epitaxial structure.
14. manufacture methods as claimed in claim 1 or 2, also comprise:
Form one first electrode on this epitaxial structure; And
Form one second electrode in this electrically-conductive backing plate.
15. manufacture methods as claimed in claim 1 or 2, wherein the width of this isolated groove is greater than the width of this passage.
CN201210459218.4A 2012-08-16 2012-11-15 Method for manufacturing light emitting diode Pending CN103594565A (en)

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TW101129805A TW201409738A (en) 2012-08-16 2012-08-16 Manufacturing method of LED

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105355752A (en) * 2015-10-27 2016-02-24 天津三安光电有限公司 Light-emitting diode chip structure, light-emitting chip packaging structure and preparation method for light-emitting chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105355752A (en) * 2015-10-27 2016-02-24 天津三安光电有限公司 Light-emitting diode chip structure, light-emitting chip packaging structure and preparation method for light-emitting chip
CN105355752B (en) * 2015-10-27 2018-03-02 天津三安光电有限公司 A kind of LED chip construction, encapsulating structure and preparation method thereof

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