CN103165768A - Method for manufacturing light emitting diode - Google Patents
Method for manufacturing light emitting diode Download PDFInfo
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- CN103165768A CN103165768A CN2012101269618A CN201210126961A CN103165768A CN 103165768 A CN103165768 A CN 103165768A CN 2012101269618 A CN2012101269618 A CN 2012101269618A CN 201210126961 A CN201210126961 A CN 201210126961A CN 103165768 A CN103165768 A CN 103165768A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000009940 knitting Methods 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
- 230000007480 spreading Effects 0.000 claims description 7
- 238000003892 spreading Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 210000004877 mucosa Anatomy 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013043 chemical agent Substances 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- 238000000227 grinding Methods 0.000 description 2
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- 238000004943 liquid phase epitaxy Methods 0.000 description 2
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- 238000002310 reflectometry Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a light emitting diode, which comprises the steps of forming an epitaxial structure on a first side of an epitaxial substrate; forming a reflective layer on the epitaxial structure; forming a first bonding layer on the reflective layer; providing a conductive substrate; forming a second bonding layer on the conductive substrate, and bonding the conductive substrate on the reflecting layer through the first bonding layer and the second bonding layer; removing a portion of the epitaxial substrate and the epitaxial structure from a second side of the epitaxial substrate to form at least one channel; separating the epitaxial substrate and the epitaxial structure; and forming an isolation trench in the epitaxial structure, wherein the isolation trench exposes the reflective layer.
Description
Technical field
The present invention relates to a kind of manufacture method, particularly relate to a kind of manufacture method of light-emitting diode.
Background technology
Light-emitting diode is a kind of light-emitting component that is formed by semi-conducting material manufacturing, have the advantages such as power consumption is low, component life is long, reaction speed is fast, add the little characteristic of easily making minimum or arrayed elements of volume, therefore in recent years along with technology is constantly progressive, its range of application has also even expanded lighting field to by indicator light, backlight.
Please refer to shown in Figure 1ly, it is the existing schematic flow sheet of making light-emitting diode.At first form the epitaxial structure 12 with a n-GaN layer 121, a multiple quantum trap layer 122 and a p-GaN layer 123 in an epitaxial substrate 11; then the interval forms a mask layer 13 with nickel and a photoresist layer 14 on epitaxial structure 12; mask layer 13 with nickel material can be protected epitaxial structure 12, avoids follow-up manufacture craft to be damaged to epitaxial structure 12.
Continue by between mask layer 13 and photoresist layer 14, remove epitaxial structure 12 until expose epitaxial substrate 11 with etching mode, form the exhaust passage of light-emitting diode, and define the light-emitting diode of single by the exhaust passage.Afterwards, remove mask layer 13 and photoresist layer 14, and form a reflector 15 and a knitting layer 16 on epitaxial structure 12 in the mode of evaporation.Continue, electrically-conductive backing plate 17 be formed at knitting layer 16 in the mode that engages, and with Laser Focusing in the n-GaN layer 121 that is connected with epitaxial substrate 11, make epitaxial substrate 11 and epitaxial structure 12 peel off (lift-off).Next, form respectively two electrodes 18 in relative both sides, wherein an electrode 18 is arranged on n-GaN layer 121, and another electrode 18 is arranged under electrically-conductive backing plate 17.Form the tube core of a plurality of light-emitting diodes at last, then in the mode of cutting.
In the making of the light-emitting diode in above-mentioned, setting due to light-emitting diode exhaust passage, so be exposed in air around reflector 15, easily make reflector 15 because of the impact of chemical agent and high temperature manufacture craft, make the edge in reflector 15 have deteriorated and impaired situation to produce, descend to cause reflectivity.
In another existing making LED technology, the exhaust passage is not set on epitaxial structure, and arrange reflector and knitting layer on complete epitaxial structure after, then the mode with laser focuses on the n-GaN layer that is connected with epitaxial substrate, epitaxial substrate and epitaxial structure glass are peeled off, remove part epitaxial structure, reflector, knitting layer and electrically-conductive backing plate in etched mode more at last, to define the light-emitting diode of single.In the making of this technology, the reflector can be protected preferably, is not easy deteriorated and impaired phenomenon and produces.But on the other hand, in this prior art owing to the exhaust passage not being set in epitaxial structure, therefore epitaxial structure stress can't be discharged and make epitaxial structure produce warping phenomenon, therefore work as with Laser Focusing in the n-GaN of epitaxial structure layer, during with separation epitaxial structure and epitaxial substrate, the gas that the stress of epitaxial loayer and n-GaN dissociate easily makes the edge break of epitaxial structure and impaired.
Therefore, how providing a kind of manufacture method of light-emitting diode, can improve the deteriorated damage situations in epitaxial structure and reflector, is the target of dealer's effort always.
Summary of the invention
Because above-mentioned problem, the object of the present invention is to provide a kind of manufacture method of light-emitting diode, the deteriorated impaired situation in epitaxial structure warpage and reflector be can reduce, guaranteeing the integrality in epitaxial structure and reflector, and then quality and the luminous efficiency of Integral luminous diode improved.
In order to achieve the above object, the manufacture method that the invention provides a kind of light-emitting diode comprises and forms an epitaxial structure on one first side of an epitaxial substrate; Form a reflector on epitaxial structure; Form one first knitting layer on the reflector; One electrically-conductive backing plate is provided; Form one second knitting layer on electrically-conductive backing plate, by first and second knitting layer to engage electrically-conductive backing plate on the reflector; One second sidesway by epitaxial substrate removes part epitaxial substrate and epitaxial structure, to form at least one passage; Separate epitaxial substrate and epitaxial structure; And forming an isolated groove in epitaxial structure, isolated groove exposes the reflector.
In order to achieve the above object, the manufacture method that the invention provides a kind of light-emitting diode comprises and forms an epitaxial structure on one first side of an epitaxial substrate; Form a reflector on epitaxial structure; Form one first knitting layer on the reflector; One electrically-conductive backing plate is provided; Form one second knitting layer on electrically-conductive backing plate, by the first knitting layer with the second knitting layer to engage electrically-conductive backing plate on the reflector; Remove part epitaxial substrate and epitaxial structure with laser manufacturing process, to form at least one passage; Separate epitaxial substrate and epitaxial structure; And forming an isolated groove in epitaxial structure, isolated groove exposes the reflector.
In a preferred embodiment of the present invention, epitaxial structure has one first semiconductor layer, an active layer and one second semiconductor layer.
In a preferred embodiment of the present invention, the reflector is through evaporation and alloy manufacture craft, to be formed on epitaxial structure.
In a preferred embodiment of the present invention, the first knitting layer is formed on the reflector in the evaporation mode.
In a preferred embodiment of the present invention, the first knitting layer and the second knitting layer are complex metal layer.
In a preferred embodiment of the present invention, before the step that removes part epitaxial substrate and epitaxial structure, also comprise the attenuate epitaxial substrate.
In a preferred embodiment of the present invention, with the mode attenuate epitaxial substrate of grinding and polishing manufacture craft.
In a preferred embodiment of the present invention, remove part epitaxial substrate and epitaxial structure, with Ear Mucosa Treated by He Ne Laser Irradiation epitaxial substrate and epitaxial structure.
In a preferred embodiment of the present invention, before forming the step of isolated groove, also comprise forming a mask layer in epitaxial structure.
In a preferred embodiment of the present invention, the step that forms isolated groove is carried out with etching mode.
In a preferred embodiment of the present invention, isolated groove and passage are in same position.
In a preferred embodiment of the present invention, with the LED core of single of isolated groove definition.
In a preferred embodiment of the present invention, manufacture method comprises that also formation one current spreading layer is on epitaxial structure.
In a preferred embodiment of the present invention, manufacture method comprises that also formation one first electrode is on epitaxial structure; And form one second electrode in electrically-conductive backing plate.
from the above, the manufacture method of light-emitting diode of the present invention is after engaging electrically-conductive backing plate and knitting layer, the attenuate epitaxial substrate, and remove part epitaxial substrate and epitaxial structure from the second side of epitaxial substrate in the mode of laser manufacturing process, to form passage, passage discharges the gas that produces when dissociating thus, and because channel setting is at least part of epitaxial structure, originally can there be sizable stress in epitaxial structure after the extension manufacture craft, and cause the warping phenomenon of epitaxial substrate and epitaxial structure, can assist to improve by arranging of those passages the warping phenomenon that the problem because of epitaxial structure stress produces, and then can improve the precision of Laser Focusing.In addition; manufacture method of the present invention is when dicing die; just cut and wear reflector and knitting layer; accordingly in the process of making light-emitting diode; can reduce the area that the reflector contacts with air; effectively the protection reflector, avoid producing deteriorated situation because chemical agent makes the reflector, and then improve the quality of light-emitting diode and extend its life-span.
Description of drawings
Fig. 1 is the existing schematic flow sheet of making light-emitting diode;
Fig. 2 is the flow chart of a kind of LED production method of preferred embodiment of the present invention;
Fig. 3 is another flow chart of LED production method of the present invention;
Fig. 4 to Figure 11 is the schematic diagram of light-emitting diode in making of preferred embodiment of the present invention; And
Figure 12 is the schematic diagram of the light-emitting diode of preferred embodiment of the present invention.
The main element symbol description
11,21: epitaxial substrate
12,22: epitaxial structure
The 121:n-GaN layer
122: the multiple quantum trap layer
The 123:p-GaN layer
13,28: mask layer
14: the photoresist layer
15,23: the reflector
16: knitting layer
17,25: electrically-conductive backing plate
18: electrode
2: light-emitting diode
211: the first sides
212: the second sides
221: the first semiconductor layers
222: active layer
223: the second semiconductor layers
24: the first knitting layers
26: the second knitting layers
27: passage
29: isolated groove
30: current spreading layer
31: the first electrodes
32: the second electrodes
S01～S09, S51, S81, S91～S94: step
Embodiment
Hereinafter with reference to relevant drawings, the manufacture method according to a kind of light-emitting diode of preferred embodiment of the present invention is described, wherein identical element will be illustrated with identical reference marks.
Please refer to shown in Figure 2ly, it is the manufacture method flow chart according to a kind of light-emitting diode of preferred embodiment of the present invention.The manufacture method of the present embodiment comprises that step S01 is to step S09.
Please be simultaneously with reference to Fig. 2, Fig. 4 and shown in Figure 5, wherein Fig. 4 and Fig. 5 are the schematic diagram of light-emitting diode of the present invention in making.In step S01, form an epitaxial structure 22 on one first side 211 of an epitaxial substrate 21.The epitaxial substrate 21 of the present embodiment is take sapphire substrate (Sapphire) as example.Certainly epitaxial substrate 21 can also be carborundum, aluminium oxide, gallium nitride, glass, quartz, gallium phosphide or GaAs substrate etc.
The main epitaxy method that forms epitaxial structure 22 has liquid phase epitaxial method (Liquid Phase Epitaxy, LPE), vapour phase epitaxy method (Vapor Phase Epitaxy, VPE) and organic metal vapour phase epitaxy method (Metal-organic Chemical Vapor Deposition, MOCVD).In addition, epitaxial structure 22 is with the material energy gap, and III family commonly used-V group element forms large to being divided into four classes, is respectively: GaP/GaAsP is serial, AlGaAs is serial, AlGaInP is serial and GaN series.At this take structure with one first semiconductor layer 221, an active layer 222 and one second semiconductor layer 223 as example.By near epitaxial substrate 21 to be sequentially the first semiconductor layer 221, active layer 222 and the second semiconductor layer 223 away from epitaxial substrate 21.Wherein, the first semiconductor layer 221 is different from the second semiconductor layer 223 tools electrically, and when the first semiconductor layer 221 was the P type, the second electrical semiconductor layer 223 was N-type; And when 221 layers of the first semiconductors were N-type, the second 223 of semiconductor layers were the P type.At this, the first semiconductor layer 221 is n type gallium nitride (GaN), and active layer 222 is multiple quantum trap (Multiple quantum-well, MQW) structure, and the second semiconductor layer 223 is P type gallium nitride.
In step S02, form a reflector 23 on epitaxial structure 22.Process electron gun evaporation or sputter manufacture craft are to be arranged at reflector 23 on epitaxial structure 22, and carry out alloy (annealing) step in the temperature of 325～550 ℃, reduce the contact resistance in 23, epitaxial structure 22 and reflector by the alloy step with heat, and can improve the reflectivity of the 23 pairs of light in reflector.In addition, the reflector 23 of the present embodiment is composite bed, and the material in reflector 23 can be sequentially nickel/silver/nickel/platinum/gold or nickel/silver/titanium/platinum/gold according to the evaporation order.
Then with reference to Fig. 2 and shown in Figure 6, Fig. 6 is the schematic diagram of light-emitting diode in making of the better enforcement of the present invention.In step S04 and step S05, an electrically-conductive backing plate 25 is provided, and forms one second knitting layer 26 on electrically-conductive backing plate 25, by the second knitting layer 26 with the first knitting layer 24 to engage electrically-conductive backing plate 25 on reflector 23.In more detail, first the mode of the second knitting layer 26 with for example evaporation is formed on electrically-conductive backing plate 25, then the second knitting layer 26 is engaged in the first knitting layer 24, so that electrically-conductive backing plate 25 is engaged in reflector 23.Wherein, the material of the second knitting layer 26 is sequentially chromium/platinum/gold or titanium/platinum/gold, with the gold heating pressurization of the second knitting layer 26, the first knitting layer 24 is engaged by the gold with the first knitting layer 24 with the second knitting layer 26, therefore, the undermost material of the second knitting layer 26 is gold, and the material of the superiors of the first knitting layer 24 is also gold.
Please refer to Fig. 2, Fig. 3, Fig. 7 and shown in Figure 8, wherein Fig. 3 is another flow chart of LED production method of the present invention; Fig. 7 and Fig. 8 are the schematic diagram of light-emitting diode of the present invention in making.Engaging electrically-conductive backing plate 25 after reflector 23, execution in step S51, attenuate epitaxial substrate 21.The present embodiment reduces the thickness of epitaxial substrate 21 with manufacture crafts such as grinding and polishings.Originally the thickness of epitaxial substrate 21 is about greater than 440 μ m, can first epitaxial substrate 21 be ground to 50～100 μ m, with the polishing manufacture craft, epitaxial substrate 21 is thinned to 20～40 μ m more at last.
Continue, after step S05 or step S51, execution in step S06 or step S07, wherein step S06 is, removes part epitaxial substrate 21 and epitaxial structure 22 by one second side 212 of epitaxial substrate 21, to form at least one passage 27.Wherein, after the effect of passage 27 will be specified in.In more detail, step S06 by epitaxial substrate 21 with respect to a side that is provided with epitaxial structure 22, that is to say the second side 212 by epitaxial substrate 21, remove part epitaxial substrate 21 and epitaxial structure 22, by the drawing of Fig. 7, remove epitaxial substrate 21 and part epitaxial structure 22 with rectilinear direction from lower to upper, but do not remove epitaxial structure 22 fully, form thus passage 27 between epitaxial substrate 21 and epitaxial structure 22, and still have part epitaxial structure 22 between passage 27 and reflector 23.In addition, the present embodiment can be for example removes part epitaxial substrate 21 and epitaxial structure 22 in the mode of Ear Mucosa Treated by He Ne Laser Irradiation, so non-limiting the use of in the present invention.
Step S07 is to remove part epitaxial substrate 21 and epitaxial structure 22 with laser manufacturing process, to form at least one passage 27.Wherein, after the effect of passage 27 also is specified in.In more detail, step S07 removes epitaxial substrate 21 and the epitaxial structure 22 of part simultaneously with the method for laser manufacturing process, drawing by Fig. 7, from the second side 212 of epitaxial substrate 21 from lower to upper, mode with laser removes epitaxial substrate 21 and part epitaxial structure 22, but do not remove epitaxial structure 22 fully, form thus passage 27 between epitaxial substrate 21 and epitaxial structure 22, and still have part epitaxial structure 22 between passage 27 and reflector 23.
It should be noted that, with the stacked direction of vertical epitaxial structure 22 in fact, step S06 and S07 remove epitaxial substrate 21 to part epitaxial structure 22, the thickness range that wherein removes epitaxial structure 22 is not to limit the use of in restriction the present invention, can be according to the difference of embodiment, and remove the epitaxial structure 22 of different-thickness, such as but not limited to 3 μ m or 5 μ m etc., wear epitaxial structure 22 as best not cut.In addition, the passage 27 of the present embodiment is by the words of overlooking direction as Fig. 7, can be formed at default LED core around, to form at least one polygon as example, right non-limiting the use of in the present invention, in other embodiments, can be different according to the environment of design and application, and passage is formed different size and shape, as rectangle or circle etc.
To shown in Figure 11, wherein Fig. 9 to Figure 11 is the schematic diagram of light-emitting diode of the present invention in making with reference to Fig. 2, Fig. 3, Fig. 7, Fig. 9.Continue, in step S08, separate epitaxial substrate 21 and epitaxial structure 22.The present embodiment with Laser Focusing in the first semiconductor layer of epitaxial structure 22 side near epitaxial substrate 21, by Laser Focusing the first semiconductor layer of part that dissociates, to separate epitaxial substrate 21 and epitaxial structure 22.Due to, causing in semiconductor layer with Laser Focusing and can produce gas when dissociating, these gases can be discharged gas by passage 27.
Continue, in step S81, form a mask layer 28 in epitaxial structure 22.Wherein, mask layer 28 can and float off by photoetching, evaporation manufacture crafts such as (lift-off) and be arranged at intervals at epitaxial structure 22, and passage 27 is between mask layer 28, and not masked layer 28 covers.At this, the material of mask layer 28 for example can comprise titanium, nickel or both combinations.
Continue, in step S09, form an isolated groove 29 in epitaxial structure 22, isolated groove 29 exposes reflector 23.In more detail, utilize etching process and take mask layer 28 as etching mask, removing the not masked layer 28 part epitaxial structure 22 that is covered, until expose reflector 23, and be formed at the isolated groove 29 of follow-up definable LED core.In the present embodiment due to passage 27 between mask layer 28, that is remove part epitaxial structure 22 by passage 27 with etching mode, and then extended the degree of depth of passage 27 and form isolated groove 29, wherein, passage 27 can be arranged at same position with isolated groove 29.In addition, can define the LED core of single by the formation of isolated groove 29.With vertical direction, isolated groove 29 is cut and is worn epitaxial structure 22 until expose portion reflector 23.Wherein, etched technology can be inductively coupled plasma ion(ic) etching (Inductively Coupled Plasma Reactive Ion Etch, ICP-RIE).
In step S91 and step S92, first remove mask layer 28, then form a current spreading layer 30 in epitaxial structure 22.The mode of wherein, can photoetching, evaporation and floating off manufacture craft forms current spreading layer 30.The current spreading layer 30 of the present embodiment is the nesa coating of an indium tin oxide (ITO).
Then, step S93 forms one first electrode 31 and reaches formation one second electrode 32 in electrically-conductive backing plate 25 on epitaxial structure 22.In more detail, the first electrode 31 and the second electrode 32 are arranged at respectively the relative both sides of light-emitting diode, and the first electrode 31 is formed on current spreading layer 30; And the second electrode 32 is formed under electrically-conductive backing plate 25.Wherein, the first electrode 31 and the second electrode 32 are also complex metal layer, and its material is titanium/platinum/gold or chromium/platinum/gold.
Please refer to Fig. 3 and shown in Figure 12, Figure 12 is the schematic diagram of the light-emitting diode of preferred embodiment of the present invention.At last, step S94, cutting light-emitting diode 2 is to form a plurality of LED core.The light-emitting diode 2 of the present embodiment is the vertical conducting formula.
in sum, the manufacture method of light-emitting diode of the present invention is after engaging electrically-conductive backing plate and knitting layer, the attenuate epitaxial substrate, and remove part epitaxial substrate and epitaxial structure from the second side of epitaxial substrate in the mode of laser manufacturing process, to form passage, passage discharges the gas that produces when dissociating thus, and because channel setting is at least part of epitaxial structure, originally can there be sizable stress in epitaxial structure after the extension manufacture craft, and cause the warping phenomenon of epitaxial substrate and epitaxial structure, can assist to improve by arranging of those passages the warping phenomenon that the problem because of epitaxial structure stress produces, and then can improve the precision of Laser Focusing.In addition; manufacture method of the present invention is when dicing die; just cut and wear reflector and knitting layer; accordingly in the process of making light-emitting diode; can reduce the area that the reflector contacts with air; effectively the protection reflector, avoid producing deteriorated situation because chemical agent makes the reflector, and then improve the quality of light-emitting diode and extend its life-span.
Compared with prior art, the manufacture method of light-emitting diode of the present invention can reduce damage and the deteriorated situation in epitaxial structure and reflector, guaranteeing the integrality in epitaxial structure and reflector, and then improves quality and the luminous efficiency of Integral luminous diode.
The above is only illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be contained in appended claim.
Claims (15)
1. the manufacture method of a light-emitting diode comprises:
Form an epitaxial structure on one first side of an epitaxial substrate;
Form a reflector on this epitaxial structure;
Form one first knitting layer on this reflector;
One electrically-conductive backing plate is provided;
Form one second knitting layer on this electrically-conductive backing plate, by this first knitting layer with this second knitting layer to engage this electrically-conductive backing plate on this reflector;
One second sidesway by this epitaxial substrate removes this epitaxial substrate of part and this epitaxial structure, to form at least one passage;
Separate this epitaxial substrate and this epitaxial structure; And
Form an isolated groove in this epitaxial structure, this isolated groove exposes this reflector.
2. the manufacture method of a light-emitting diode comprises:
Form an epitaxial structure on one first side of an epitaxial substrate;
Form a reflector on this epitaxial structure;
Form one first knitting layer on this reflector;
One electrically-conductive backing plate is provided;
Form one second knitting layer on this electrically-conductive backing plate, by this first knitting layer with this second knitting layer to engage this electrically-conductive backing plate on this reflector;
Remove this epitaxial substrate of part and this epitaxial structure with laser manufacturing process, to form at least one passage;
Separate this epitaxial substrate and this epitaxial structure; And
Form an isolated groove in this epitaxial structure, this isolated groove exposes this reflector.
3. manufacture method as claimed in claim 1 or 2, wherein this epitaxial structure has the first semiconductor layer, active layer and the second semiconductor layer.
4. manufacture method as claimed in claim 1 or 2, wherein this reflector is through evaporation and alloy manufacture craft, to be formed on this epitaxial structure.
5. manufacture method as claimed in claim 1 or 2, wherein this first knitting layer is formed on this reflector in the evaporation mode.
6. manufacture method as claimed in claim 1 or 2, wherein this first knitting layer and this second knitting layer are respectively complex metal layer.
7. manufacture method as claimed in claim 1 or 2 before wherein removing the step of this epitaxial substrate of part and this epitaxial structure, also comprises:
This epitaxial substrate of attenuate.
8. manufacture method as claimed in claim 7 is wherein to grind and this epitaxial substrate of mode attenuate of polishing manufacture craft.
9. manufacture method as claimed in claim 1, wherein remove this epitaxial substrate of part and this epitaxial structure, with this epitaxial substrate of Ear Mucosa Treated by He Ne Laser Irradiation and this epitaxial structure.
10. manufacture method as claimed in claim 1 or 2 before wherein forming the step of isolated groove, also comprises:
Form a mask layer in this epitaxial structure.
11. manufacture method as claimed in claim 1 or 2 wherein forms the step of this isolated groove, carries out with etching mode.
12. manufacture method as claimed in claim 1 or 2, wherein this isolated groove and this passage are in same position.
13. manufacture method as claimed in claim 1 or 2 wherein defines the LED core of single with this isolated groove.
14. manufacture method as claimed in claim 1 or 2 also comprises:
Form a current spreading layer on this epitaxial structure.
15. manufacture method as claimed in claim 1 or 2 also comprises:
Form one first electrode on this epitaxial structure; And
Form one second electrode in this electrically-conductive backing plate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100145605 | 2011-12-09 | ||
| TW100145605A TW201324843A (en) | 2011-12-09 | 2011-12-09 | Manufacturing method of LED |
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| Publication Number | Publication Date |
|---|---|
| CN103165768A true CN103165768A (en) | 2013-06-19 |
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| CN2012101269618A Pending CN103165768A (en) | 2011-12-09 | 2012-04-26 | Method for manufacturing light emitting diode |
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| TW (1) | TW201324843A (en) |
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|---|---|---|---|---|
| WO2014205695A1 (en) | 2013-06-26 | 2014-12-31 | 晶元光电股份有限公司 | Light-emitting element and manufacturing method therefor |
| TWI581459B (en) * | 2013-06-26 | 2017-05-01 | 晶元光電股份有限公司 | Light-emitting device and manufacturing method thereof |
| US20170271548A1 (en) | 2013-06-26 | 2017-09-21 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
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|---|---|---|---|---|
| JPH11177137A (en) * | 1997-12-16 | 1999-07-02 | Nichia Chem Ind Ltd | Manufacture of nitride semiconductor element |
| US20050026396A1 (en) * | 2002-04-09 | 2005-02-03 | Yeom Geun-Young | Method of etching substrates |
| CN101465402A (en) * | 2008-07-11 | 2009-06-24 | 厦门市三安光电科技有限公司 | Method for manufacturing film LED chip device based on gapless plane bonding |
| CN102157633A (en) * | 2011-01-17 | 2011-08-17 | 苏州纳方科技发展有限公司 | Separation method of LED (light emitting diode) epitaxy chip |
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- 2011-12-09 TW TW100145605A patent/TW201324843A/en unknown
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- 2012-04-26 CN CN2012101269618A patent/CN103165768A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177137A (en) * | 1997-12-16 | 1999-07-02 | Nichia Chem Ind Ltd | Manufacture of nitride semiconductor element |
| US20050026396A1 (en) * | 2002-04-09 | 2005-02-03 | Yeom Geun-Young | Method of etching substrates |
| CN101465402A (en) * | 2008-07-11 | 2009-06-24 | 厦门市三安光电科技有限公司 | Method for manufacturing film LED chip device based on gapless plane bonding |
| CN102157633A (en) * | 2011-01-17 | 2011-08-17 | 苏州纳方科技发展有限公司 | Separation method of LED (light emitting diode) epitaxy chip |
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