CN105895745B - The cutting method of heterojunction solar battery piece - Google Patents
The cutting method of heterojunction solar battery piece Download PDFInfo
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- CN105895745B CN105895745B CN201610451612.1A CN201610451612A CN105895745B CN 105895745 B CN105895745 B CN 105895745B CN 201610451612 A CN201610451612 A CN 201610451612A CN 105895745 B CN105895745 B CN 105895745B
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- 238000005520 cutting process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000003698 laser cutting Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 15
- 239000002346 layers by function Substances 0.000 abstract description 6
- 230000009471 action Effects 0.000 abstract description 3
- 238000002309 gasification Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
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Abstract
The present invention relates to area of solar cell, specifically discloses a kind of cutting method of heterojunction solar battery piece, it comprises the following steps：Laser cutting at least once is carried out from the surface of cell piece one form grooving with Ultra-Violet Laser；By cell piece sliver.Above-mentioned cutting method; it is smaller due to producing heat when cell piece surface using Ultra-Violet Laser cutting, the narrower width for the grooving that Ultra-Violet Laser leaves on cell piece surface, and action of ultraviolet laser; the transparent conductive film layer in cell piece can be effectively protected, so as to the performance of cell piece.Further, since directly not cutting off cell piece, and cell piece is separated by sliver；So each functional layer of the opposite side of crystal silicon layer does not have to sintering gasification, effectively protects the performance of these functional layers, further reduces damage of the cutting to heterojunction solar battery piece.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of cutting method of heterojunction solar battery piece.
Background technology
, must be right when the power and voltage of the market demand can not be taken into account in order to adapt to photovoltaic market development in pluralism
Solar battery sheet is cut by laser.The principle of laser cutting is that laser is irradiated on solar battery sheet after over-focusing,
Material temperature is set drastically to be increased to melt or gasify, with the relative motion of laser and solar battery sheet, in solar cell
Joint-cutting is formed on piece so as to reach the purpose of cutting.Laser cutting have 1., cutting accuracy is high, joint-cutting is narrow, quality is good, heat affecting
Area is smaller, and cuts end face flat smooth；2., cutting speed it is fast, it is high in machining efficiency；3., be a kind of contactless cutting, do not have
Machining Forces, deformation will not be produced, the pollution problems such as processing bits, greasy dirt, noise are also not present.
Heterojunction solar battery (HIT batteries) is intrinsic by being added between doped amorphous silicon layer and crystalline silicon substrate
Constructed by layer.Heterojunction solar battery had both had the high efficiency and high stability of crystal silicon solar energy battery, simultaneously because
Energy consumption is small, and technique is relatively easy, temperature characterisitic is more preferable, can also there is higher output at high temperature.Receive much concern in recent years,
One of the main direction of development as solar cell.
At present, Monocrystalline silicon cell piece or polycrystalline silicon battery plate are formed using the cutting of infrared laser cutting device, but this
Cutting method is not ideally suited for the cutting of heterojunction solar battery piece, and it is mainly manifested in：The surface of cell piece
It is wide to cut well width, and amorphous silicon membrane and transparency conducting layer are caused to damage.
The content of the invention
Based on this, it is necessary to the problem of not being suitable for heterojunction solar battery piece for existing cutting method, there is provided
A kind of cutting method suitable for heterojunction solar battery piece.
A kind of cutting method of heterojunction solar battery piece, comprises the following steps：
It is cut by laser at least once from a side surface of heterojunction solar battery piece with Ultra-Violet Laser, formation is cut
Groove；
Heterojunction solar battery piece with the grooving is subjected to sliver operation.
The cutting method of above-mentioned heterojunction solar battery piece, due to being cut using Ultra-Violet Laser, Ultra-Violet Laser exists
The narrower width for the grooving that heterojunction solar battery piece surface leaves, and action of ultraviolet laser is in heterojunction solar battery
Produce that heat is smaller during piece surface, can effectively protect in heterojunction solar battery piece can not resistant to elevated temperatures material (such as
Transparent conductive film layer), so as to improve the performance of the heterojunction solar battery piece after cutting.Still further aspect, above-mentioned hetero-junctions
The cutting method of solar battery sheet, directly heterojunction solar battery piece is not cut off with Ultra-Violet Laser, and simply formed
Grooving, operated by follow-up sliver and be kept completely separate heterojunction solar battery piece；Due to heterojunction solar battery
In, main thickness concentrates on the crystal silicon layer of centre, and the mode of grooving can realize each work(of the only side to crystal silicon layer
Ergosphere carries out laser sintered gasification, and each functional layer of the opposite side of crystal silicon layer does not have to sintering and gasified, and effectively protects these
The performance of functional layer, further reduce damage of the cutting to heterojunction solar battery piece.
In one of the embodiments, the wavelength of the Ultra-Violet Laser is 315~400nm.
In one of the embodiments, the power of the Ultra-Violet Laser is less than or equal to 5W.
In one of the embodiments, the cut surface of the laser cutting is heterojunction solar battery piece close to N-type silicon
A side surface.
In one of the embodiments, in laser cutting, cut place is carried out to protect air-blowing to sweep.
In one of the embodiments, the protection gas is nitrogen.
In one of the embodiments, the number of the laser cutting is at least twice.
In one of the embodiments, the depth of cut being cut by laser every time is 20~40 μm.
In one of the embodiments, the ratio between the depth of the grooving and thickness of the heterojunction solar battery piece are
1:2~2:3.
In one of the embodiments, the sliver operation is manually glass-severing.
Brief description of the drawings
Fig. 1 is the configuration state signal after the laser cutting of the heterojunction solar battery piece of one embodiment of the invention
Figure.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with embodiment
The present invention is further elaborated.It should be appreciated that embodiment described herein is only to explain the present invention,
It is not intended to limit the present invention.
It should be noted that when element is referred to as " being arranged at " another element, it can be directly on another element
Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
For illustrative purposes only, it is unique embodiment to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more
The arbitrary and all combination of related Listed Items.
A kind of cutting method of heterojunction solar battery piece, comprises the following steps：
Step S1：It is cut by laser at least once from a side surface of heterojunction solar battery piece with Ultra-Violet Laser,
Form grooving；
Step S2：Heterojunction solar battery piece with the grooving is subjected to sliver operation.
Wherein, heterojunction solar battery piece illustrates by taking the heterojunction solar battery piece 100 in Fig. 1 as an example, can
With understanding, the cutting of other heterojunction solar battery pieces is referred to understand, will not be repeated here.
Referring to Fig. 1, specifically, heterojunction solar battery piece 100, including：Crystal silicon layer 110, is sequentially located at crystalline silicon
The first intrinsic layer 121, the first doped amorphous silicon layer 131, the first transparency conducting layer on the side (upside in Fig. 1) of layer 110
141st, front gate line electrode 151；And it is sequentially located at the second intrinsic layer of the opposite side (downside in Fig. 1) of crystal silicon layer 110
122nd, the second doped amorphous silicon layer 132, the second transparency conducting layer 142 and backplate 152.Usually, crystal silicon layer 110
Thickness is more than 100 μm, and the first intrinsic layer 121, the first doped amorphous silicon layer 131, the first transparency conducting layer 141, second are intrinsic
The 122, second doped amorphous silicon layer 132 of layer, the thickness of the second transparency conducting layer 142 are nanoscale.More specifically, in hetero-junctions
In solar battery sheet 100, crystal silicon layer 110 is P-type crystal silicon chip (p-c-Si), and the first doped amorphous silicon layer 131 is that N-type is non-
Crystal silicon layer (n-a-Si), the second doped amorphous silicon layer 132 are P-type non-crystalline silicon layer (p-a-Si).
Wherein, step S1 main purpose is to form grooving 9, that is to say, that heterojunction solar battery piece 100 is carried out
Hemisect, without full-cutting；Heterojunction solar battery piece 100 after step S1 also connects together, not each other
Separation.
Specifically, Ultra-Violet Laser is produced by ultraviolet laser, and the present invention is not particularly limited to the species of ultraviolet laser.
Preferably, the wavelength of Ultra-Violet Laser is 315~400nm.Laser cutting so can further be reduced to heterojunction solar electricity
The damage of pond piece.In the present embodiment, the wavelength of Ultra-Violet Laser is 355nm.
Preferably, the power of Ultra-Violet Laser is less than or equal to 5W.So the damage range of cut edge can be made further to reduce.
Preferably, the pulse frequency of Ultra-Violet Laser is 10~50KHz.Wherein, laser cutting cut surface (namely it is ultraviolet swash
The shadow surface of light), preferably heterojunction solar battery piece 100 close to a side surface of N-type silicon (namely N faces of cell piece),
Uper side surface in namely Fig. 1.Through inventor study find, laser to N-type non-crystalline silicon (namely in Fig. 1 first doping
Amorphous silicon layer 131) damage it is relatively small, and comparatively, P-type non-crystalline silicon in heterojunction solar battery is (namely in Fig. 1
The second doped amorphous silicon layer 132) damage it is larger.When Ultra-Violet Laser from N faces inject, can effectively protect P-type non-crystalline silicon, from
And effectively reduce damage of the laser cutting to heterojunction solar battery piece.
In order to further improve the effect of cutting, the present embodiment carries out protecting air-blowing to sweep in laser cutting to cut place.
Protection gas selects：The gas not reacted in laser cutting process with heterojunction solar battery piece.Protect gas on the one hand can
To take away heat caused by laser in time, avoid heat from assembling, play a part of cooling, on the other hand, protection gas can be with
Avoid heterojunction solar battery piece from being contacted with oxygen, anti-oxidation can also be played a part of, can so reduce for P-N
The damage of knot and transparency conducting layer.
Preferably, protection gas is selected from nitrogen.It is, of course, understood that other protection gas are can also be, such as argon gas.
In the present embodiment, the number of laser cutting is at least twice；More specifically, for twice.Cut using multiple laser
Cut, it is possible to reduce the power being cut by laser every time, the influence for avoiding heat excessive to heterojunction solar battery piece.Preferably,
The depth of cut being cut by laser every time is 20~40 μm.So less depth of cut, it is ensured that the width cut every time compared with
It is small, so as to further reduce cutting width.
It is, of course, understood that the present invention only can also form grooving 9 by being once cut by laser.
After laser cutting, grooving 9 is formed on the N faces of heterojunction solar battery piece.Preferably, grooving 9
The ratio between thickness of depth and heterojunction solar battery piece 100 is 1:2~2:3.So follow-up sliver can be facilitated to operate,
The bottom land of grooving 9 can again be located in crystal silicon layer 110, effectively protects each function on the downside of heterojunction solar battery piece
Layer.
Wherein, step S2 main purpose is to be kept completely separate heterojunction solar battery to come.
In the present embodiment, sliver operation is manually glass-severing；That is, heterojunction solar electricity is held by operator
Pond piece, it is broken into two with one's hands along grooving.
It is, of course, also possible to be to understand, sliver of the invention operation is not limited to manually glass-severing, can also be machinery
Piece is broken, such as mistake pair of rollers heterojunction solar battery piece carries out pressure and it is disconnected along grooving.
The cutting method of above-mentioned heterojunction solar battery piece, due to being cut using Ultra-Violet Laser, Ultra-Violet Laser exists
The narrower width for the grooving that heterojunction solar battery piece surface leaves, and action of ultraviolet laser is in heterojunction solar battery
Produce that heat is smaller during piece surface, can effectively protect in heterojunction solar battery piece can not resistant to elevated temperatures material (such as
Transparent conductive film layer), so as to improve the performance of the heterojunction solar battery piece after cutting.Still further aspect, above-mentioned hetero-junctions
The cutting method of solar battery sheet, directly heterojunction solar battery piece is not cut off with Ultra-Violet Laser, and simply formed
Grooving, operated by follow-up sliver and be kept completely separate heterojunction solar battery piece；Due to heterojunction solar battery
In, main thickness concentrates on the crystal silicon layer of centre, and the mode of grooving can realize each work(of the only side to crystal silicon layer
Ergosphere carries out laser sintered gasification, and each functional layer of the opposite side of crystal silicon layer does not have to sintering and gasified, and effectively protects these
The performance of functional layer, further reduce damage of the cutting to heterojunction solar battery piece.
Each technical characteristic of above-described embodiment can be combined arbitrarily, to make description succinct, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, lance is not present in the combination of these technical characteristics
Shield, all it is considered to be the scope of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. cutting method of heterojunction solar battery piece, it is characterised in thatThe heterojunction solar battery piece is HIT batteries；The cutting method comprises the following steps：It is cut by laser at least once from a side surface of heterojunction solar battery piece with Ultra-Violet Laser, forms grooving；Heterojunction solar battery piece with the grooving is subjected to sliver operation, so that heterojunction solar battery piece is complete Separate.
- 2. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that the Ultra-Violet Laser Wavelength be 315~400nm.
- 3. the cutting method of heterojunction solar battery piece according to claim 2, it is characterised in that the Ultra-Violet Laser Power be less than or equal to 5W.
- 4. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that the laser cutting Cut surface for heterojunction solar battery piece close to a side surface of N-type silicon.
- 5. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that be cut by laser When, cut place is carried out to protect air-blowing to sweep.
- 6. the cutting method of heterojunction solar battery piece according to claim 5, it is characterised in that it is described protection gas be Nitrogen.
- 7. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that the laser cutting Number at least twice.
- 8. the cutting method of heterojunction solar battery piece according to claim 7, it is characterised in that laser cutting every time Depth of cut be 20~40 μm.
- 9. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that the depth of the grooving The ratio between thickness of degree and the heterojunction solar battery piece is 1:2~2:3.
- 10. the cutting method of heterojunction solar battery piece according to claim 1, it is characterised in that the sliver behaviour As manually glass-severing.
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| GB2572608A (en) * | 2018-04-03 | 2019-10-09 | Ilika Tech Ltd | Laser processing method for thin film structures |
| CN110676163B (en) * | 2018-07-03 | 2022-02-08 | 福建钜能电力有限公司 | Slicing method of heterojunction laminated solar cell |
| CN110808310B (en) * | 2018-08-06 | 2021-08-10 | 德运创鑫(北京)科技有限公司 | Method for reducing cutting efficiency loss of solar cell chip and photovoltaic module |
| CN109128534B (en) * | 2018-09-20 | 2021-06-01 | 云谷（固安）科技有限公司 | Laser zooming cutting process of multi-film module |
| CN111952406A (en) * | 2019-05-15 | 2020-11-17 | 苏州联诺太阳能科技有限公司 | Battery piece preparation method and battery assembly |
| CN110335922A (en) * | 2019-06-20 | 2019-10-15 | 成都珠峰永明科技有限公司 | The cutting method of solar energy half battery |
| DE102019006095A1 (en) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Isolation method for the isolation of a semiconductor wafer comprising several solar cell stacks |
| CN110767778B (en) * | 2019-11-06 | 2021-05-14 | 维科诚（苏州）光伏科技有限公司 | Manufacturing method of solar cell through groove, solar cell and photovoltaic module |
| CN112838135B (en) * | 2019-11-25 | 2023-04-28 | 福建金石能源有限公司 | Preparation method of flexible solar cell with edge passivation and repair functions |
| CN111834211B (en) * | 2020-07-24 | 2023-09-29 | 浙江晶科能源有限公司 | Pretreatment method of silicon wafer and preparation method of stitch welding solar module |
| CN112894162B (en) * | 2021-01-14 | 2023-08-29 | 大族激光科技产业集团股份有限公司 | Laser cutting method and laser cutting system for circuit board |
| CN115224153B (en) * | 2021-03-31 | 2023-09-22 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN113380926B (en) * | 2021-06-11 | 2023-02-10 | 安徽华晟新能源科技有限公司 | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
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| CN105895745A (en) | 2016-08-24 |
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