CN105513956A - Solar cell corrosion cutting method and solar cell produced by same - Google Patents
Solar cell corrosion cutting method and solar cell produced by same Download PDFInfo
- Publication number
- CN105513956A CN105513956A CN201510950081.6A CN201510950081A CN105513956A CN 105513956 A CN105513956 A CN 105513956A CN 201510950081 A CN201510950081 A CN 201510950081A CN 105513956 A CN105513956 A CN 105513956A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- corrosion
- cutting
- section
- cutting method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000007797 corrosion Effects 0.000 title claims abstract description 33
- 238000005260 corrosion Methods 0.000 title claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 24
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 30
- 239000011241 protective layer Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 238000003698 laser cutting Methods 0.000 abstract description 4
- 230000035882 stress Effects 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 208000016253 exhaustion Diseases 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell corrosion cutting method and a solar cell produced by the same. A solar cell is corrosion-cut through chemical corrosion according to the width of a needed strip solar cell to form a strip solar cell. The section of the solar cell after corrosion cutting is composed of an etching section and a splitting section, and the depth of the etching section exceeds that of the N-type layer of the solar cell. An oxidation protection layer is arranged on the surface of the etching section, and the oxidation protection layer covers a PN node and a nearby area. The solar cell is corrosion-cut through chemical corrosion, the edge of the strip solar cell formed by the method has no mechanical stress or thermal stress defects caused by diamond or laser cutting, the etching section near the PN node is annealed, so that the surface state density is decreased, and the efficiency of the solar cell is guaranteed effectively. Moreover, the method is applicable to mass production, and can effectively reduce the manufacturing cost of linear concentrator solar cell modules.
Description
Technical field
The invention belongs to technical field of solar utilization technique, particularly a kind of corrosion cutting method of solar cell and the solar cell of the method production.
Background technology
Solar energy have the restriction of clean, No Assets region, concerning the mankind forever without good characteristics such as exhaustions, be more and more subject to the favor of people.The photovoltaic module technology kind utilizing solar energy to carry out generating electricity is more, and concentrating component technology is undoubtedly one of technology of most market prospects.Be divided into again in concentrating component technology high power concentrator (light concentrating times is greater than 300 times) component technology, in times concentrating component technology and low-concentration (light concentrating times is less than 100 times) component technology.The solar cell that wherein low-concentration component technology uses is generally crystal silicon solar battery, and its size and shape are all different because of different component design, as line concentrating component the solar cell that uses be strip, the strip of about a few mm wide of size.This technology utilizes the optic panel with concentration structure effectively to reduce the cell piece consumption of common photovoltaic module, thus reduces photovoltaic module production cost.
But so far, the strip solar cell also do not produced specially for linear concentrator component technology, the strip solar cell therefore needed for linear concentrator assembly is all by obtaining common crystal silicon solar battery diamond or laser cutting.But owing to making the cut edge place of solar cell on the one hand to common crystal silicon solar battery cutting, particularly there is the fracture of key in PN junction Si that is neighbouring and sensitive surface edge, define many dangling bonds, thus make the photo-generated carrier produced by photoelectric effect be easy to form compound in edge; On the other hand because cutting makes edge create stress or thermal defect, and edge exposes contaminated being also easy in atmosphere and makes edge become the serious recombination region of charge carrier, reduces every unit for electrical property parameters of solar cell.Common efficiency of solar cell before the reason of above 2 makes the solar cell cutting into strip compare not cut declines comparatively large, thus the efficiency of linear concentrator assembly is reduced, and cost of electricity-generating is compared with ordinary flat assembly too large advantage.
Summary of the invention
The object of the invention is to: for above-mentioned Problems existing, provide a kind of and effectively can reduce the loss in efficiency after solar cell cutting, be easy to the solar cell that the corrosion cutting method of the solar cell of large-scale production and the method are produced simultaneously.
Technical scheme of the present invention is achieved in that a kind of corrosion cutting method of solar cell, it is characterized in that: solar cell is carried out corrosion cutting according to the mode of the width chemical corrosion of required strip solar cell, form strip solar cell, concrete steps are as follows:
A), to solar cell carry out cleaning post-drying, then positive photoresist on solar cell upper surface uniform application, solar cell upper surface covers by described positive photoresist completely;
B), some mask blanks are set above solar cell, and expose with the positive photoresist of ultraviolet light to solar cell upper surface, described some mask blanks are arranged in same level, and leave exposing clearance between adjacent two mask blanks, the cutting position that described exposing clearance and solar cell preset is corresponding, and other parts of described solar cell are blocked completely by mask blank;
C), exposure after solar cell is developed, described solar cell upper surface is removed in developer solution by the positive photoresist that the cutting position after uv-exposure is corresponding, then uses H
3pO
4silicon oxynitride anti-reflection layer corresponding to solar battery surface cutting position is removed when 70 ° ~ 100 °, with HF, solar cell cutting position corresponding part is etched again, etch period is 30 ~ 60 minutes, the degree of depth of etching needs the N-type layer exceeding solar cell, then to wash with the positive photoresist of acetone soln by solar cell upper surface, finally dry with deionized water rinsing;
D) hydrogen or the nitrogen hydrogen mixeding gas of, solar cell after treatment being put into 250 ° ~ 500 ° are annealed, last cutting position on solar cell forms etching groove, during use, by solar cell after the division of etching groove place, then can form strip solar cell.
The corrosion cutting method of solar cell of the present invention, it is in described step c), and the degree of depth of described etching is 20 ~ 80 microns.
The corrosion cutting method of solar cell of the present invention, it is in described step d), and described nitrogen hydrogen mixeding gas is the mist that 92% ~ 98% nitrogen adds 2% ~ 8% hydrogen formation.
The corrosion cutting method of solar cell of the present invention, it is in described step d), the solar cell being formed with etching groove is utilized the oxide protective layer section of the wet-oxygen oxidation technique of semiconductor after corrosion being formed layer of silicon dioxide.
The corrosion cutting method of solar cell of the present invention; described in it, wet-oxygen oxidation technique is specially: by oxygen pure for drying before passing into oxidation furnace first through a bubbler; oxygen is made to pass through the high purity deionized water heated; carry a certain amount of steam; silicon is oxidized; under the condition of 600 ° ~ 1000 °, be oxidized 15 ~ 30 minutes, thus grow at the section of etching the silicon dioxide oxide protective layer that a layer thickness is 0.2 ~ 0.5 micron.
A kind of solar cell adopting the corrosion cutting method of solar cell to produce; comprise the solar cell piece be made up of P mold base and N-type layer; PN junction is formed between described P mold base and N-type layer; described N-type layer upper surface is provided with silicon oxynitride anti-reflection layer; it is characterized in that: the solar cell section after excessive erosion cutting is made up of etch profile and sliver section; the degree of depth of described etch profile exceedes the N-type layer of solar cell; described etch profile surface is provided with one deck oxide protective layer, and described oxide protective layer covers PN junction and near zone thereof.
Solar cell of the present invention, the thickness of oxide protective layer described in it is 0.2 ~ 0.5 micron.
Solar cell of the present invention, the degree of depth of etch profile described in it is 20 ~ 80 microns.
Solar cell of the present invention, the width L1 of solar cell after arranging oxide protective layer that etch profile described in it is corresponding is not more than solar cell width L2 corresponding to sliver section.
The present invention adopts the mode of chemical corrosion to carry out corrosion cutting to solar cell, the mechanical stress that strip solar cell formed like this does not have diamond or laser cutting to cause due to edge and thermal stress defect, and the etch profile of close PN junction is owing to having carried out annealing in process, its surface density of states is reduced, thus the efficiency of solar cell can effectively be ensured, the method is simply easy to large-scale production due to processing step simultaneously, therefore effectively can reduce the manufacturing cost of line style photovoltaic concentrator module.
Accompanying drawing explanation
Fig. 1 is the structural representation of conventional solar cell sheet.
Fig. 2 is the structural representation after smearing positive photoresist in the present invention.
Fig. 3 arranges the structural representation that mask blank carries out uv-exposure in the present invention.
Fig. 4 is the solar battery structure schematic diagram in the present invention after development.
Fig. 5 is the solar battery structure schematic diagram in the present invention after etching.
Fig. 6 is the solar battery structure schematic diagram in the present invention after wet-oxygen oxidation etch profile.
Fig. 7 is the solar battery structure schematic diagram in the present invention after sliver.
Fig. 8 is the solar battery structure schematic diagram that in the present invention, final production goes out.
Mark in figure: 1 is P mold base, and 2 is N-type layer, and 3 is silicon oxynitride anti-reflection layer, and 4 is etch profile, and 5 is sliver section, and 6 is oxide protective layer, and 7 is positive photoresist, and 8 is mask blank, and 9 is exposing clearance, and 10 is etching groove.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, a kind of corrosion cutting method of solar cell, solar cell is carried out corrosion cutting according to the mode of the width chemical corrosion of required strip solar cell, and form strip solar cell, concrete steps are as follows:
A), cleaning post-drying is carried out to solar cell, then positive photoresist 7 on solar cell upper surface uniform application, as shown in Figure 2, solar cell upper surface covers by described positive photoresist 7 completely, and described solar cell upper surface is the one side with silicon oxynitride anti-reflection layer 3.
B), as shown in Figure 3, some mask blanks 8 are set above solar cell, and expose with the positive photoresist 7 of ultraviolet light to solar cell upper surface, described some mask blanks 8 are arranged in same level, and leave exposing clearance 9 between adjacent two mask blanks 8, described exposing clearance 9 is corresponding with the cutting position that solar cell presets, and other parts of described solar cell are blocked completely by mask blank 8.
C), exposure after solar cell is developed, as shown in Figure 4, described solar cell upper surface is removed in developer solution by the positive photoresist that the cutting position after uv-exposure is corresponding, then uses H
3pO
4silicon oxynitride anti-reflection layer corresponding to solar battery surface cutting position is removed when 70 ° ~ 100 °, with HF, solar cell cutting position corresponding part is etched again, etch period is 30 ~ 60 minutes, the degree of depth of etching needs the N-type layer 2 exceeding solar cell, the degree of depth of described etching is 20 ~ 80 microns, then to wash with the positive photoresist of acetone soln by solar cell upper surface, finally dry with deionized water rinsing.
D) hydrogen or the nitrogen hydrogen mixeding gas of, solar cell after treatment being put into 250 ° ~ 500 ° are annealed, process annealing can reduce interfacial state, and the existence of interfacial state can cause the right compound of electronics and hole, last cutting position on solar cell forms etching groove 10, as shown in Figure 5; Wherein, described nitrogen hydrogen mixeding gas is the mist that 92% ~ 98% nitrogen adds 2% ~ 8% hydrogen formation.
As shown in Figure 6, the solar cell being formed with etching groove 10 is utilized the oxide protective layer 6 section of the wet-oxygen oxidation technique of semiconductor after corrosion being formed layer of silicon dioxide, wherein, described wet-oxygen oxidation technique is specially: by oxygen pure for drying before passing into oxidation furnace first through a bubbler, oxygen is made to pass through the high purity deionized water heated, carry a certain amount of steam, silicon is oxidized, under the condition of 600 ° ~ 1000 °, be oxidized 15 ~ 30 minutes, thus grow at the section of etching the silicon dioxide oxide protective layer that a layer thickness is 0.2 ~ 0.5 micron, the existence of silicon dioxide oxide protective layer can be played passivation to PN junction and the region near it well and cut off impurity around and pollutant to the impact of section, thus effectively ensure the efficiency of solar cell.
As shown in FIG. 7 and 8, during use, solar cell is broken after the mode of splitting divides along etching groove 10 place roller mode or direct mechanical, then can form strip solar cell, the mechanical stress that the strip solar cell formed does not have diamond or laser cutting to cause due to edge and thermal stress defect, and the etch profile of close PN junction is owing to having carried out annealing in process, its surface density of states is reduced, thus the efficiency of solar cell can effectively be ensured, simultaneously the method is simply easy to large-scale production due to processing step, therefore the manufacturing cost of line style photovoltaic concentrator module can effectively be reduced.
As shown in figs. 1 and 8, a kind of solar cell adopting the corrosion cutting method of above-mentioned solar cell to produce, comprise the solar cell piece be made up of P mold base 1 and N-type layer 2, PN junction is formed between described P mold base 1 and N-type layer 2, described N-type layer 2 upper surface is provided with silicon oxynitride anti-reflection layer 3, solar cell section after excessive erosion cutting is made up of etch profile 4 and sliver section 5, the degree of depth of described etch profile 4 exceedes the N-type layer 2 of solar cell, described etch profile 4 surface is provided with one deck oxide protective layer 6, described oxide protective layer 6 covers PN junction and near zone thereof.
Wherein, the thickness of described oxide protective layer 6 is 0.2 ~ 0.5 micron; the degree of depth of described etch profile 4 is 20 ~ 80 microns, and the width L1 of solar cell after arranging oxide protective layer 6 of described etch profile 4 correspondence is not more than the solar cell width L2 of sliver section 5 correspondence.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a corrosion cutting method for solar cell, is characterized in that: solar cell is carried out corrosion cutting according to the mode of the width chemical corrosion of required strip solar cell, and form strip solar cell, concrete steps are as follows:
A), to solar cell carry out cleaning post-drying, then positive photoresist on solar cell upper surface uniform application, solar cell upper surface covers by described positive photoresist completely;
B), some mask blanks are set above solar cell, and expose with the positive photoresist of ultraviolet light to solar cell upper surface, described some mask blanks are arranged in same level, and leave exposing clearance between adjacent two mask blanks, the cutting position that described exposing clearance and solar cell preset is corresponding, and other parts of described solar cell are blocked completely by mask blank;
C), exposure after solar cell is developed, described solar cell upper surface is removed in developer solution by the positive photoresist that the cutting position after uv-exposure is corresponding, then uses H
3pO
4silicon oxynitride anti-reflection layer corresponding to solar battery surface cutting position is removed when 70 ° ~ 100 °, with HF, solar cell cutting position corresponding part is etched again, etch period is 30 ~ 60 minutes, the degree of depth of etching needs the N-type layer exceeding solar cell, then to wash with the positive photoresist of acetone soln by solar cell upper surface, finally dry with deionized water rinsing;
D) hydrogen or the nitrogen hydrogen mixeding gas of, solar cell after treatment being put into 250 ° ~ 500 ° are annealed, last cutting position on solar cell forms etching groove, during use, by solar cell after the division of etching groove place, then can form strip solar cell.
2. the corrosion cutting method of solar cell according to claim 1, is characterized in that: in described step c), and the degree of depth of described etching is 20 ~ 80 microns.
3. the corrosion cutting method of solar cell according to claim 1, is characterized in that: in described step d), and described nitrogen hydrogen mixeding gas is the mist that 92% ~ 98% nitrogen adds 2% ~ 8% hydrogen formation.
4. the corrosion cutting method of the solar cell according to claim 1,2 or 3; it is characterized in that: in described step d), the solar cell being formed with etching groove is utilized the oxide protective layer section of the wet-oxygen oxidation technique of semiconductor after corrosion being formed layer of silicon dioxide.
5. the corrosion cutting method of solar cell according to claim 4; it is characterized in that: described wet-oxygen oxidation technique is specially: by oxygen pure for drying before passing into oxidation furnace first through a bubbler; oxygen is made to pass through the high purity deionized water heated; carry a certain amount of steam; silicon is oxidized; under the condition of 600 ° ~ 1000 °, be oxidized 15 ~ 30 minutes, thus grow at the section of etching the silicon dioxide oxide protective layer that a layer thickness is 0.2 ~ 0.5 micron.
6. the solar cell adopting the corrosion cutting method of the solar cell as described in claim 4 or 5 to produce, comprise the solar cell piece be made up of P mold base (1) and N-type layer (2), PN junction is formed between described P mold base (1) and N-type layer (2), described N-type layer (2) upper surface is provided with silicon oxynitride anti-reflection layer (3), it is characterized in that: the solar cell section after excessive erosion cutting is made up of etch profile (4) and sliver section (5), the degree of depth of described etch profile (4) exceedes the N-type layer (2) of solar cell, described etch profile (4) surface is provided with one deck oxide protective layer (6), described oxide protective layer (6) covers PN junction and near zone thereof.
7. solar cell according to claim 6, is characterized in that: the thickness of described oxide protective layer (6) is 0.2 ~ 0.5 micron.
8. solar cell according to claim 7, is characterized in that: the degree of depth of described etch profile (4) is 20 ~ 80 microns.
9. solar cell according to claim 8, is characterized in that: the width L1 of solar cell after arranging oxide protective layer (6) that described etch profile (4) is corresponding is not more than solar cell width L2 corresponding to sliver section (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510950081.6A CN105513956A (en) | 2015-12-18 | 2015-12-18 | Solar cell corrosion cutting method and solar cell produced by same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510950081.6A CN105513956A (en) | 2015-12-18 | 2015-12-18 | Solar cell corrosion cutting method and solar cell produced by same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105513956A true CN105513956A (en) | 2016-04-20 |
Family
ID=55721844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510950081.6A Pending CN105513956A (en) | 2015-12-18 | 2015-12-18 | Solar cell corrosion cutting method and solar cell produced by same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105513956A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895745A (en) * | 2016-06-21 | 2016-08-24 | 苏州协鑫集成科技工业应用研究院有限公司 | Method for cutting heterojunction solar cell |
| CN108110072A (en) * | 2016-11-23 | 2018-06-01 | Lg电子株式会社 | Solar cell and its manufacturing method |
| CN108231999A (en) * | 2017-12-29 | 2018-06-29 | 唐山国芯晶源电子有限公司 | The processing method of quartz resonator chip |
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
| CN110915002A (en) * | 2018-01-18 | 2020-03-24 | 伟创力有限公司 | Manufacturing method of laminated solar module |
| CN111446308A (en) * | 2020-05-09 | 2020-07-24 | 天合光能股份有限公司 | Solar cell and laser slicing method |
| CN111999632A (en) * | 2019-05-27 | 2020-11-27 | 合肥晶合集成电路有限公司 | Method for obtaining PN junction sample |
| CN113555463A (en) * | 2020-04-23 | 2021-10-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
| CN114695592A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Method for reducing solar cell lobe damage, solar cell and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015782A1 (en) * | 2008-07-18 | 2010-01-21 | Chen-Hua Yu | Wafer Dicing Methods |
| CN101930942A (en) * | 2009-06-24 | 2010-12-29 | 宇威光电股份有限公司 | Cutting method of semiconductor wafer |
| CN102117851A (en) * | 2011-01-13 | 2011-07-06 | 山东舜亦新能源有限公司 | N type polycrystalline silicon battery plate and production method thereof |
| CN104201240A (en) * | 2014-08-29 | 2014-12-10 | 四川钟顺太阳能开发有限公司 | Production process for solar cell, and solar cell produced by same |
| CN205264726U (en) * | 2015-12-18 | 2016-05-25 | 四川钟顺太阳能开发有限公司 | Solar battery |
-
2015
- 2015-12-18 CN CN201510950081.6A patent/CN105513956A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015782A1 (en) * | 2008-07-18 | 2010-01-21 | Chen-Hua Yu | Wafer Dicing Methods |
| CN101930942A (en) * | 2009-06-24 | 2010-12-29 | 宇威光电股份有限公司 | Cutting method of semiconductor wafer |
| CN102117851A (en) * | 2011-01-13 | 2011-07-06 | 山东舜亦新能源有限公司 | N type polycrystalline silicon battery plate and production method thereof |
| CN104201240A (en) * | 2014-08-29 | 2014-12-10 | 四川钟顺太阳能开发有限公司 | Production process for solar cell, and solar cell produced by same |
| CN205264726U (en) * | 2015-12-18 | 2016-05-25 | 四川钟顺太阳能开发有限公司 | Solar battery |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895745A (en) * | 2016-06-21 | 2016-08-24 | 苏州协鑫集成科技工业应用研究院有限公司 | Method for cutting heterojunction solar cell |
| CN108110072A (en) * | 2016-11-23 | 2018-06-01 | Lg电子株式会社 | Solar cell and its manufacturing method |
| CN108110072B (en) * | 2016-11-23 | 2021-01-05 | Lg电子株式会社 | Solar cell and method for manufacturing same |
| CN108231999A (en) * | 2017-12-29 | 2018-06-29 | 唐山国芯晶源电子有限公司 | The processing method of quartz resonator chip |
| CN110915002A (en) * | 2018-01-18 | 2020-03-24 | 伟创力有限公司 | Manufacturing method of laminated solar module |
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
| CN111999632A (en) * | 2019-05-27 | 2020-11-27 | 合肥晶合集成电路有限公司 | Method for obtaining PN junction sample |
| CN111999632B (en) * | 2019-05-27 | 2023-02-03 | 合肥晶合集成电路股份有限公司 | Method for obtaining PN junction sample |
| CN113555463A (en) * | 2020-04-23 | 2021-10-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
| CN111446308A (en) * | 2020-05-09 | 2020-07-24 | 天合光能股份有限公司 | Solar cell and laser slicing method |
| CN114695592A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Method for reducing solar cell lobe damage, solar cell and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105513956A (en) | Solar cell corrosion cutting method and solar cell produced by same | |
| CN205264726U (en) | Solar battery | |
| CN202601572U (en) | Back contact sliver cells | |
| CN104201240B (en) | The production technology of a kind of solar cell and use the solar cell that this technique produces | |
| NL2022765B1 (en) | Step-by-Step Doping Method of Phosphorous for High-efficiency and Low-cost Crystalline Silicon Cell | |
| CN108666393B (en) | Solar cell and preparation method thereof | |
| EP2466650A2 (en) | Method for fabricating silicon wafer solar cell | |
| CN101814547A (en) | Method for preparing selective emitter crystalline silicon solar cell | |
| KR101085382B1 (en) | Method for fabricating solar cell comprising selective emitter | |
| CN103022265A (en) | Solar cells and diffusion method thereof | |
| US20170018676A1 (en) | Method for producing solar cells having simultaneously etched-back doped regions | |
| CN102931287A (en) | N-type battery slice and preparation method thereof | |
| JP5756352B2 (en) | Manufacturing method of back electrode type solar cell | |
| CN115148856A (en) | Selective doping method and manufacturing method of solar cell | |
| JP2014146766A (en) | Method for manufacturing solar cell and solar cell | |
| CN103258914A (en) | MWT solar battery and manufacturing method thereof | |
| KR101363141B1 (en) | Method for manufacturing solar cell | |
| KR101054985B1 (en) | Method for fabricating solar cell | |
| CN108682701B (en) | Solar cell and manufacturing process thereof | |
| CN105244417A (en) | Crystalline silicon solar cell and preparation method thereof | |
| CN115117202A (en) | Preparation method of solar cell and solar cell | |
| JP2014086589A (en) | Method for manufacturing solar cell and solar cell | |
| CN114664972B (en) | Polishing method of silicon wafer, preparation method of solar cell and solar cell | |
| JP2005260157A (en) | Solar cell and solar cell module | |
| CN106298982A (en) | A kind of manufacture method of N-type double-side cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160420 |
|
| RJ01 | Rejection of invention patent application after publication |