CN103346181B - 一种无焊带太阳能电池组件及其制备方法 - Google Patents

一种无焊带太阳能电池组件及其制备方法 Download PDF

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CN103346181B
CN103346181B CN201310215117.7A CN201310215117A CN103346181B CN 103346181 B CN103346181 B CN 103346181B CN 201310215117 A CN201310215117 A CN 201310215117A CN 103346181 B CN103346181 B CN 103346181B
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张凤英
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Xuzhou dayto Photovoltaic Technology Co., Ltd.
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Abstract

本发明公开了一种太阳能电池组件及其制备方法，太阳电池组件由五层结构组成，第一层导电背板、第二层导电胶连接点、第三层背接触电池片、第四层封装材料以及第五层钢化玻璃依次层叠在一起；其中第一层导电背板采用新型层叠结构。这样的设计提供一种较低成本、易于实现的无焊带的太阳电池组件及其制备方法。

Description

一种无焊带太阳能电池组件及其制备方法
技术领域
本发明涉及一种无焊带太阳能电池组件及其制备方法，属于太阳能电池组件领域。
背景技术
现有太阳电池组件中，多片晶体硅太阳电池串联封装成大块组件的时候，一般都是选用涂锡铜焊带焊接在相邻电池片的正、负极主栅线来实现多个电池片之间的串联。这种常规的焊带串联方式比较直观、方法简单，所以得到了广泛的应用，但这种方法却有几个重大的缺点：1、涂锡铜焊带的涂锡层一般都是SnPb合金，Pb的含量一般都在40%左右，Pb的大量使用对环境产生了非常大的潜在风险；2、涂锡铜焊带在使用时焊接温度一般都在300度以上，热应力很容易引起晶体硅电池片的弯曲和碎片，尤其是现在随着电池技术的进步，使用硅片越来越薄，当硅片厚度小于160um情况下，现有的高温焊接技术已经完全不适用；3、由于焊带本身对电池片的遮光，造成了电池片在封装成组件过程中较大的功率封装损失，多晶电池封装损失一般都大于3%，单晶电池封装损失大于5%。因此，开发无焊带的新型电池组件结构及其制备方式显得极为重要，背接触电池组件在此背景下应运而生，荷兰国家能源研究中心（ECN)等研究机构提出了一种基于导电箔线路的互联方式，但是这种背接触电池组件的结构和制备工艺流程明显较为复杂，使用材料价格也较昂贵，并且生产效率低下。
发明内容
发明目的：本发明的目的是针对现有技术的不足而提供一种较低成本、易于实现的无焊带太阳能电池组件及其制备方法。
技术方案：为了降低成本、易于实现并且无需焊带，本发明公开一种无焊带太阳能电池组件，包括依次层叠在一起的第一层导电背板、第二层导电胶连接点、第三层背接触电池片、第四层封装材料以及第五层钢化玻璃；第一层导电背板采用依次层叠在一起的背板一层含氟聚合物层、背板二层PET材料层、背板三层金属电路层以及背板四层密封材料层。背板三层金属电路层由铜或铝制成，其厚度为20至60um。背板四层密封材料层的厚度为50至200um。
为了遮挡金属电路，提高背板的光学反射率和组件的输出功率，并使得整块组件看上去更均匀美观，背板四层密封材料层上加叠背板五层等介电性材料层和背板六层密封材料层；背板四层密封材料层、背板五层等介电性材料层和背板六层密封材料层的总厚度为50至200um。
本发明的一种无焊带太阳能电池组件的制备方法，包括以下步骤：
（a）用点胶或钢板印刷的方法在第一层导电背板上印制导电胶水，印制导电胶的位置和第三层背接触电池片的电极点位置相匹配形成第二层导电胶连接点；
（b）在第二层导电胶连接点上精确放置第三层背接触电池片，保证第三层背接触电池片的电极点和第二层导电胶连接点的位置一一对应；
（c）在第三层背接触电池片上铺设第四层封装材料以及第五层钢化玻璃。
其中，（a）步骤中导电胶水的固化温度为80至140℃；导电胶水的材料为硅酮基或环氧树脂基，分散在其中的导电粒子为Ag或者表面镀Ag的Cu颗粒；第二层导电胶连接点的每个导电胶水连接点圆柱状或圆锥状，底盘直径在1至4mm，高度在0.1至0.5mm。
有益效果：本发明与现有技术相比，其显著优点在于电池组件不含焊带，制备方法简单可靠，使用了特殊结构的导电背板，集成了底层的密封材料，覆盖在金属电路上的密封材料同时也对电路表面起到了隔绝水汽和抗氧化的作用，并使用低温固化导电胶，实现了层压工艺时同时实现导电胶的低温固化，取代了现有的复杂的背接触电池组件封装工艺流程，满足了低成本、大产能和高成品率的无焊带背接触电池组件封装技术要求。
附图说明
图1为本发明的无焊带太阳能电池组件的结构图；
图2为本发明的无焊带太阳能电池组件的层状结构图；
图3为本发明的导电背板结构图；
图4为本发明的导电背板改进结构图。
具体实施方式
下面结合图对本发明作更进一步的说明。
如图1和图2所示，本发明的太阳电池组件由五层结构组成，第一层导电背板1、第二层导电胶连接点2、第三层背接触电池片3、第四层封装材料4以及第五层钢化玻璃5依次层叠在一起；这种太阳电池组件的制备方法为用点胶或钢板印刷的方法在第一层导电背板1上印制导电胶水，印制导电胶的位置和第三层背接触电池片3的电极点位置相匹配形成第二层导电胶连接点2，导电胶水的固化温度为80至140℃，导电胶水的材料为硅酮基或环氧树脂基，分散在其中的导电粒子为Ag或者表面镀Ag的Cu颗粒，每个导电胶水连接点圆柱状或圆锥状，底盘直径在1至4mm，高度在0.1至0.5mm；在第二层导电胶连接点2上精确放置第三层背接触电池片3，保证第三层背接触电池片3的电极点和第二层导电胶连接点2的位置一一对应；在第三层背接触电池片3上铺设第四层封装材料4以及第五层钢化玻璃5。其中，如图3所示，第一层导电背板1采用依次层叠在一起的背板一层含氟聚合物层11、背板二层PET材料层12、背板三层金属电路层13以及背板四层密封材料层14；背板三层金属电路层13由铜或铝制成，其厚度为20至60um；背板四层密封材料层14的厚度为50至200um。由此得出，本发明公开的太阳电池组件不含焊带，制备方法简单可靠，使用了特殊结构的导电背板，集成了底层的密封材料，密封材料同时保护了背板上的金属电路，并使用低温固化导电胶，实现了层压工艺时同时实现导电胶的低温固化，取代了现有的复杂的背接触电池组件封装工艺流程，满足了低成本、大产能和高成品率的无焊带背接触电池组件封装技术要求。
然而，如图4所示，第一层导电背板1是可以有改进型结构的，可采用依次层叠在一起的背板一层含氟聚合物层11、背板二层PET材料层12、背板三层金属电路层13、背板四层密封材料层14、背板五层等介电性材料层15以及背板六层密封材料层16；背板四层密封材料层14、背板五层等介电性材料层15和背板六层密封材料层16的总厚度为50至200um。这样的第一层导电背板1的改进可以遮挡金属电路，提高背板的光学反射率和组件的输出功率，并使得整块组件看上去更均匀美观。

Claims (4)

1.一种无焊带的太阳电池组件，包括由下至上依次层叠在一起的导电背板（1）、导电胶连接点（2）、背接触电池片（3）、封装材料（4）以及钢化玻璃（5）；其特征在于，导电背板（1）采用由下至上依次层叠在一起的含氟聚合物层（11）、PET材料层（12）、金属电路层（13）以及第一密封材料层（14）；第一密封材料层（14）上加叠等介电性材料层（15）和第二密封材料层（16）；第一密封材料层（14）、等介电性材料层（15）和第二密封材料层（16）的总厚度为50μm至200μm；
所述导电背板（1）的不同层材料经粘接热压工艺制成；
背接触电池片（3）通过低温固化的导电胶水和金属电路层（13）互联；
导电胶连接点（2）的每个导电胶水连接点圆柱状或圆锥状，底盘直径在1μm至4μm，高度在0.1μm至0.5μm。
2.如权利要求1所述的一种无焊带的太阳电池组件，其特征在于，金属电路层（13）由铜或铝制成，其厚度为20μm至60μm。
3.一种权利要求1或2所述的无焊带的太阳电池组件的制备方法，其特征在于，包括以下步骤：
（a）用点胶或钢板印刷的方法在导电背板（1）上印制导电胶水，印制导电胶的位置和背接触电池片（3）的电极点位置相匹配形成导电胶连接点（2）；
（b）在导电胶连接点（2）上精确放置背接触电池片（3），保证背接触电池片（3）的电极点和导电胶连接点（2）的位置一一对应；
（c）在背接触电池片（3）上铺设封装材料（4）以及钢化玻璃（5）。
4.如权利要求3所述的一种无焊带的太阳电池组件的制备方法，其特征在于，（a）步骤中导电胶水的固化温度为80 至140℃ ；导电胶水的材料为硅酮基或环氧树脂基，分散在其中的导电粒子为Ag 或者表面镀Ag 的Cu 颗粒；导电胶连接点（2）的每个导电胶水连接点圆柱状或圆锥状，底盘直径在1μm至4μm，高度在0.1μm至0.5μm。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904268A (zh) * 2019-02-27 2019-06-18 泰州隆基乐叶光伏科技有限公司 背接触太阳电池组件及其制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104057741A (zh) * 2014-06-20 2014-09-24 润峰电力有限公司 一种太阳能电池片普通产线引进钢板印刷的工艺
CN104851926B (zh) * 2015-04-02 2017-03-15 山东拜科通新材料科技有限公司 一种用于背接触太阳能组件的电路装置及其制备方法
CN107958943A (zh) * 2017-12-26 2018-04-24 南京日托光伏科技股份有限公司 一种基于ibc电池封装的光伏组件及制作方法
CN109148627A (zh) * 2018-09-11 2019-01-04 黄河科技学院 高效薄膜太阳能电池及制备方法
CN110112245B (zh) * 2019-05-28 2024-05-24 晶澳（扬州）太阳能科技有限公司 太阳能电池组件及其制备方法
CN110085692A (zh) * 2019-05-28 2019-08-02 晶澳（扬州）太阳能科技有限公司 光伏导电背板、太阳能电池组件及其制备方法
CN110350047A (zh) * 2019-07-05 2019-10-18 晶澳（邢台）太阳能有限公司 叠瓦太阳能电池双玻组件及其制备方法
CN110335912B (zh) * 2019-07-05 2023-10-27 晶澳（邢台）太阳能有限公司 光伏导电玻璃、太阳能电池双玻组件及其制备方法
CN110571305B (zh) * 2019-08-26 2022-01-07 泰州隆基乐叶光伏科技有限公司 背接触太阳能电池组件生产方法及背接触太阳能电池组件
WO2021036201A1 (zh) * 2019-08-26 2021-03-04 泰州隆基乐叶光伏科技有限公司 背接触太阳能电池组件生产方法及背接触太阳能电池组件
CN110707170B (zh) * 2019-08-26 2022-02-18 泰州隆基乐叶光伏科技有限公司 背接触太阳能电池组件生产方法及背接触太阳能电池组件
CN112928177A (zh) * 2019-11-21 2021-06-08 福建金石能源有限公司 一种铝背板金属层作背接触焊带的太阳能电池封装方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810604A (zh) * 2012-09-13 2012-12-05 英利能源（中国）有限公司 背接触电池光伏组件的制作方法
CN102832264A (zh) * 2011-06-15 2012-12-19 茂迪股份有限公司 具有背电场结构的太阳能电池及其制造方法
CN103022201A (zh) * 2011-09-27 2013-04-03 杜邦公司 晶硅太阳能电池模块及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000568A1 (en) * 2001-06-15 2003-01-02 Ase Americas, Inc. Encapsulated photovoltaic modules and method of manufacturing same
US20080223429A1 (en) * 2004-08-09 2008-09-18 The Australian National University Solar Cell (Sliver) Sub-Module Formation
US20090294291A1 (en) * 2005-11-15 2009-12-03 Massachusetts Institute Of Technology Iso-dielectric separation apparatus and methods of use
US20090255571A1 (en) * 2008-04-14 2009-10-15 Bp Corporation North America Inc. Thermal Conducting Materials for Solar Panel Components
KR20110008284A (ko) * 2008-04-29 2011-01-26 어플라이드 머티어리얼스, 인코포레이티드 모놀리식 모듈 어셈블리 기술들을 이용하여 제조된 광전지 모듈들
MY158500A (en) * 2010-08-05 2016-10-14 Solexel Inc Backplane reinforcement and interconnects for solar cells
JP5702116B2 (ja) * 2010-11-09 2015-04-15 富士フイルム株式会社 太陽電池保護シート及びその製造方法、太陽電池用バックシート、並びに太陽電池モジュール
CN102569454A (zh) * 2010-12-31 2012-07-11 阿特斯(中国)投资有限公司 背板材料、使用背板材料的光伏组件及其制造方法
CN102522451A (zh) * 2011-12-08 2012-06-27 常州天合光能有限公司 低电阻高功率连接方法
CN202443994U (zh) * 2012-01-19 2012-09-19 英利能源（中国）有限公司 一种太阳能背接触式电池组件封装工装
CN202678352U (zh) * 2012-04-28 2013-01-16 苏州昊瑞新能源科技有限公司 一种晶体硅光伏组件封装用背板
CN102709359B (zh) * 2012-05-08 2014-11-26 常州天合光能有限公司 太阳能电池组件复合式导电背板及其制备和使用方法
CN103048120B (zh) * 2012-12-21 2015-04-01 东莞南玻光伏科技有限公司 太阳能光伏组件的反射率测试方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832264A (zh) * 2011-06-15 2012-12-19 茂迪股份有限公司 具有背电场结构的太阳能电池及其制造方法
CN103022201A (zh) * 2011-09-27 2013-04-03 杜邦公司 晶硅太阳能电池模块及其制造方法
CN102810604A (zh) * 2012-09-13 2012-12-05 英利能源（中国）有限公司 背接触电池光伏组件的制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904268A (zh) * 2019-02-27 2019-06-18 泰州隆基乐叶光伏科技有限公司 背接触太阳电池组件及其制造方法

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