CN103341919B - Improve polycrystalline silicon rod section rate pretreating process - Google Patents

Abstract

The present invention relates to one in solar-grade polysilicon field and improve polycrystalline silicon rod section rate pretreating process, by the substrate of metal crystalline substance holder as carrying polycrystalline silicon rod, be about the bonding glass glue of 0.5-1mm at the even and thickness of its end face uniform application one deck; Bonding glass glue is placed the glass substrate that one piece of thickness is about the thick two-sided frosted of 13-17mm, smears the uniform silico briquette adhesive glue of one deck on the glass substrate; Silico briquette adhesive glue is placed two pieces of evolution and polycrystalline silicon rods of side polishing, and the gap retaining 9-12mm from beginning to end hold in the palm with brilliant in its front and back end, and between two polycrystalline silicon rods, gap is 4-9mm; At polycrystalline silicon rod end face and stickup parallel with long side two width are 20-25mm, be spaced apart the rectangle resin streak of 80-85mm, retain the width of 3-7mm with crystal bar front and back end.Beneficial effect: this technology improves the accuracy of Linear cut, fragment rate comparatively traditional handicraft reduces by 50%, improves slice efficiency.

Description

Improve polycrystalline silicon rod section rate pretreating process

Technical field

The one that the present invention relates in the silicon rod slicing operation of solar-grade polysilicon field improves polycrystalline silicon rod section rate pretreating process.

Background technology

At present, world energy sources structure is mainly with oil, coal, the non-renewable energy resources such as natural gas are main, but, along with the continuous progress of the mankind, socioeconomic development, the demand of people to the energy is increasing, various countries start to be faced with severe problem of energy crisis, therefore, various countries start development with solar energy, wind energy is the novel renewable energy of representative, particularly solar energy, although the energy proportionate share that current solar energy occupies is less, but because it has cleanliness without any pollution, the advantage such as inexhaustible becomes various countries and to try to be the first the energy of development, the most important device of solar energy is utilized to be solar cell, it is the semiconductor devices utilizing photovoltaic effect to convert solar energy into electrical energy, the material now preparing by photovoltaic industry the most main flow of solar cell is silicon materials, it is divided into monocrystalline silicon and polysilicon, because production of polysilicon cost is lower, so be applicable to the suitability for industrialized production of low cost.

Production of polysilicon is a complicated process engineering, the quality control of each step all plays important impact to the efficiency of final polysilicon chip, and the section of polycrystalline silicon rod is wherein the most important operation producing silicon chip, the principle of section utilizes cutting steel wire to drive mortar, SiC particulate and crystal bar in mortar is utilized to rub, reach the object of cutting, the early stage main inner circle cast-cutting saw that uses is cut into slices, inner circle cast-cutting saw uses circular knife in annular, inner cutter hole is coated with SiC particle, this method spillage of material is large, working (machining) efficiency is low, therefore multi-wire saw technology is arisen at the historic moment, multi-wire saw technology has become the polysilicon slicing mode of main flow, and Wire-cut Electrical Discharge Machining is the technology that recent application is cut at silicon chip, this cutting technique of research display can greatly improve silicon chip surface quality, cutting thickness is less than 120 μm, but the application of current this technology in polysilicon section is also immature.

Summary of the invention

Object of the present invention mainly improves polycrystalline silicon rod section rate, cut into slices while basic purposes realizing polycrystalline silicon rod, transform common slice process, guarantee does not affect the principle that existing equipment normally works, pretreatment is carried out to polycrystalline silicon rod, do not excised completely because polycrystalline silicon rod contains the more head-tail of impurity when evolution, the C of silicon rod head and afterbody, O and relevant metal ions impurity content higher, so position still needs excision as cycle stock process, for achieving the above object, the invention provides a kind of raising polycrystalline silicon rod section rate pretreating process.

Technical scheme: be made up of following steps:

(1) the bonding glass glue of 0.5-1mm: by the substrate of metal crystalline substance holder as carrying polycrystalline silicon rod, with its end face of alcohol washes, is about at the even and thickness of its end face uniform application one deck;

(2): on bonding glass glue, place the glass substrate that one piece of thickness is about the thick two-sided frosted of 13-17mm, ensure that glass substrate asks close adhesion to fix with metal crystalline substance and do not come off in slicing processes;

(3): smear the silico briquette adhesive glue that one deck is uniform, thickness is about 0.5-3mm on the glass substrate;

(4): on silico briquette adhesive glue, place two pieces of evolution and polycrystalline silicon rods of side polishing, the gap retaining 9-12mm from beginning to end hold in the palm with brilliant in its front and back end, and between two polycrystalline silicon rods, gap is 4-9mm;

(5): at polycrystalline silicon rod end face and stickup parallel with long side two width are 20-25mm, be spaced apart the rectangle resin streak of 80-85mm, retain the width of 3-7mm with crystal bar front and back end.

Described metal crystalline substance holder one end arranges handle.

Beneficial effect: this technology improves the accuracy of Linear cut, fragment rate comparatively traditional handicraft reduces by 50%, improves slice efficiency.

Accompanying drawing explanation

Fig. 1 is the side view of the section pretreating process that the present invention relates to;

Fig. 2 is the top view of pretreating process.

Specific implementation method

With reference to accompanying drawing 1,2, be made up of following steps:

(1): by the substrate of metal crystalline substance holder 1 as carrying polycrystalline silicon rod, it is of a size of about 80mm × 700mm, with its end face of alcohol washes, at its end face uniform application one deck evenly and thickness is about the bonding glass glue 2 of 1mm, carry out being adhesively fixed technique for follow-up with glass;

(2): on bonding glass glue 2, place the glass substrate 3 that one piece of thickness is about the thick two-sided frosted of 15mm, ensure that glass substrate 3 asks 1 close adhesion to fix with metal crystalline substance and do not come off in slicing processes;

(3): on glass substrate 3, smear the silico briquette adhesive glue 4 that one deck is uniform, thickness is about 2mm; Carry out being adhesively fixed technique for follow-up with silicon rod, and smear suitable thickness and shield, the infringement that when being reduced in section, slicer steel wire produces glass substrate 3;

(4): on silico briquette adhesive glue 4, place two pieces of evolution and polycrystalline silicon rods 5 of side polishing, the gap retaining 12mm from beginning to end hold in the palm with brilliant in its front and back end, and between two polycrystalline silicon rods 5, gap is 6mm; Ensure to leave certain gap when the steel wire folding and unfolding carrying out slicer in slicing processes, reduce and collapse limit phenomenon;

(5): be 20mm at polycrystalline silicon rod 5 end face and with long side by the parallel stickup of resin binder 6 two width, be spaced apart the rectangle resin streak 7 of 80mm, the width of 5mm is retained with crystal bar front and back end, do not excised completely because polycrystalline silicon rod contains the more head-tail of impurity when evolution, still retain end to end containing the more region of impurity, unheading process need be reserved carry out in time cutting into slices, therefore retain 5mm width be conducive to cut into slices time steel wire to line, reduce fragment phenomenon, thus improve the section rate of slice process, and improve polysilicon chip total quality, described metal crystalline substance holder 1 one end arranges handle 8.

Claims (2)

1. improve a polycrystalline silicon rod section rate pretreating process, it is characterized in that: be made up of following steps:

(1): by the substrate of metal crystalline substance holder as carrying polycrystalline silicon rod, with its end face of alcohol washes, at the even and thickness of its end face uniform application one deck be the bonding glass glue of 0.5-1mm;

(2): on bonding glass glue, place the glass substrate that one piece of thickness is the two-sided frosted that 13-17mm is thick, ensure that glass substrate asks close adhesion to fix with metal crystalline substance and do not come off in slicing processes;

(3): smear the silico briquette adhesive glue that one deck is uniform, thickness is 0.5-3mm on the glass substrate;

(4): on silico briquette adhesive glue, place two pieces of evolution and polycrystalline silicon rods of side polishing, the gap retaining 9-12mm from beginning to end hold in the palm with brilliant in its front and back end, and between two polycrystalline silicon rods, gap is 4-9mm;

(5): at polycrystalline silicon rod end face and stickup parallel with long side two width are 20-25mm, be spaced apart the rectangle resin streak of 80-85mm, retain the width of 3-7mm with crystal bar front and back end.

2. raising polycrystalline silicon rod section rate pretreating process according to claim 1, is characterized in that: described metal crystalline substance holder one end arranges handle.