CN103341919A

CN103341919A - Pretreatment process capable of increasing slicing rate of polycrystalline silicon rod

Info

Publication number: CN103341919A
Application number: CN2013103203770A
Authority: CN
Inventors: 闫英永; 曾磊; 李松松; 张澎伟
Original assignee: SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd
Current assignee: SHANDONG DAHAI NEW ENERGY DEVELOPMENT Co Ltd
Priority date: 2013-07-29
Filing date: 2013-07-29
Publication date: 2013-10-09
Anticipated expiration: 2033-07-29
Also published as: CN103341919B

Abstract

The invention relates to a pretreatment process capable of increasing the slicing rate of a polycrystalline silicon rod in the field of solar-grade polycrystalline silicon. A metal crystal bracket is used as a base for bearing the polycrystalline silicon rod, a layer of uniform glass adhesive glue with the thickness being about 0.5-1mm is evenly coated on the top surface of the metal crystal bracket, a double-sided frosted glass substrate with the thickness being about 13-17mm is placed on the glass adhesive glue, a layer of uniform silicon block adhesive glue is coated on the glass substrate, two evoluted polycrystalline silicon rods with the polished side surface are placed on the silicon block adhesive glue, 9-12mm gaps are reserved between the front ends and the rear ends of the polycrystalline silicon rods and the head and the tail of the crystal bracket, a gap between the two polycrystalline silicon rods is 4-9mm, two rectangular resin strips with the width being 20-25mm and an interval being 80-85mm are pasted on the top surfaces of the polycrystalline silicon rods in parallel to long side edges, and the 3-7mm width is reserved between the two rectangular resin strips and the front ends and the rear ends of the polycrystalline silicon rods. The pretreatment process has the beneficial effects that the precision of linear cutting is improved, the debris rate is reduced by 50% compared with a conventional process, and the slicing efficiency is improved.

Description

Improve polycrystalline silicon rod section rate pretreating process

Technical field

The present invention relates to a kind of raising polycrystalline silicon rod section rate pretreating process in the silicon rod slicing process of solar-grade polysilicon field.

Background technology

At present; the world energy sources structure is mainly with oil; coal; non-renewable energy resources such as natural gas are main; yet; continuous progress along with the mankind; socioeconomic continuous development; people are increasing to the demand of the energy; various countries begin to be faced with severe problem of energy crisis; therefore; various countries begin development with solar energy; wind energy is the novel renewable energy of representative; solar energy particularly; though advantages such as the energy ratio share that present solar energy occupies is less, has cleanliness without any pollution because of it, and is inexhaustible become the energy that various countries try to be the first and develop; utilizing the most important device of solar energy is solar cell; it is to utilize photovoltaic effect with the semiconductor devices of conversion of solar energy for electric energy, and the material of the main flow of preparation solar cell is silicon materials on the photovoltaic industry now, and it is divided into monocrystalline silicon and polysilicon; because the production of polysilicon cost is lower, so be fit to low-cost industrial production.

Production of polysilicon is the process engineering of a complexity, the quality control in each step is all played significant effects to the efficient of final polysilicon chip, and the section of polycrystalline silicon rod wherein is a most important operation of producing silicon chip, the principle of section is to utilize the cutting steel wire to drive mortar, utilize that SiC particulate and crystal bar rub in the mortar, reach the purpose of cutting, circle cast-cutting saw section in early stage main the use, interior circle cast-cutting saw uses circular knife in the annular, inner cutter hole is coated with the SiC particle, this method spillage of material is big, working (machining) efficiency is low, therefore multi-thread cutting technique arises at the historic moment, multi-thread cutting technique has become the polysilicon slicing mode of main flow, and Wire-cut Electrical Discharge Machining is that recent application is in the technology of silicon chip cutting, studies show that this cutting technique can greatly improve the silicon chip surface quality, cutting thickness is less than 120 μ m, but the application of present this technology in the polysilicon section that is that all right is ripe.

Summary of the invention

Purpose of the present invention mainly is to improve polycrystalline silicon rod section rate, when the realization polycrystalline silicon rod is cut into slices basic purposes, transform common slice process, guarantee not influence the principle of existing equipment operate as normal, polycrystalline silicon rod is carried out preliminary treatment, because polycrystalline silicon rod contains the more portion end to end of impurity and is not excised fully when evolution, the C of silicon rod head and afterbody, O and associated metal ionic impurity content are higher, so the position still needs excision to handle as cycle stock, for achieving the above object, the invention provides a kind of raising polycrystalline silicon rod section rate pretreating process.

Technical scheme: formed by following steps:

(1): by the substrate of the brilliant holder of metal as the carrying polycrystalline silicon rod, with its end face of alcohol wash, evenly smear one deck evenly and thickness is about the bonding glass glue of 0.5-1mm at its end face;

(2): place the glass substrate that a thickness is about the thick two-sided frosted of 13-17mm at bonding glass glue, guarantee that glass substrate does not come off with the brilliant holder of metal close adhesion is fixing in slicing processes;

(3): smear the silico briquette adhesive glue that layer of even, thickness are about 0.5-3mm at glass substrate;

(4): place two polycrystalline silicon rods of evolution and side polishing at the silico briquette adhesive glue, its front and back end and brilliant holder head and the tail keep the gap of 9-12mm, and the slit is 4-9mm between two polycrystalline silicon rods;

(5): be 20-25mm at polycrystalline silicon rod end face and two width of parallel stickup with long side, be spaced apart the rectangle resin streak of 80-85mm, keep the width of 3-7mm with the crystal bar front and back end.

The brilliant holder of described metal one end arranges handle.

Beneficial effect: present technique has improved the accuracy of line cutting, and fragment rate reduces by 50% than traditional handicraft, has improved slice efficiency.

Description of drawings

Fig. 1 is the side view of the section pretreating process that the present invention relates to;

Fig. 2 is the vertical view of pretreating process.

Specific implementation method

With reference to accompanying drawing 1,2, formed by following steps:

(1): by the substrate of the brilliant holder 1 of metal as the carrying polycrystalline silicon rod, it is of a size of about 80mm * 700mm, with its end face of alcohol wash, evenly smear one deck evenly and thickness is about the bonding glass glue 2 of 1mm at its end face, be used for follow-up and the glass technology that is adhesively fixed;

(2): place the glass substrate 3 that a thickness is about the thick two-sided frosted of 15mm at bonding glass glue 2, guarantee that glass substrate 3 does not come off with the brilliant holder of metal 1 close adhesion is fixing in slicing processes;

(3): smear the silico briquette adhesive glue 4 that layer of even, thickness are about 2mm at glass substrate 3; Be used for follow-up and the silicon rod technology that is adhesively fixed, and smear suitable thickness and shield the infringement that the slicer steel wire produces glass substrate 3 when being reduced in section;

(4): place two polycrystalline silicon rods 5 of evolution and side polishing at silico briquette adhesive glue 4, its front and back end and brilliant holder head and the tail keep the gap of 12mm, and the slit is 6mm between two polycrystalline silicon rods 5; Leave certain clearance when guaranteeing the steel wire folding and unfolding of slicer in carrying out slicing processes, reduce and collapse the limit phenomenon;

(5): be 20mm at polycrystalline silicon rod 5 end faces and with long side by two width of resin binder 6 parallel stickups, be spaced apart the rectangle resin streak 7 of 80mm, width with crystal bar front and back end reservation 5mm, because polycrystalline silicon rod contains the more portion end to end of impurity and is not excised fully when evolution, still keep end to end and contain the more zone of impurity, needing to reserve unheading process carries out when section, steel wire to line when so the 5mm width that keeps is conducive to cut into slices, reduce the fragment phenomenon, thereby improved the section rate of slice process, and improved the polysilicon chip total quality, the brilliant holder of described metal 1 one ends arrange handle 8.

Claims

1. one kind is improved polycrystalline silicon rod section rate pretreating process, it is characterized in that: be made up of following steps:

2. raising polycrystalline silicon rod section rate pretreating process according to claim 1 is characterized in that: the brilliant holder of described metal one end arranges handle.