CN106738393B - A kind of method using spark cutting technology fly-cutting CdS monocrystal - Google Patents
A kind of method using spark cutting technology fly-cutting CdS monocrystal Download PDFInfo
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- CN106738393B CN106738393B CN201611124203.7A CN201611124203A CN106738393B CN 106738393 B CN106738393 B CN 106738393B CN 201611124203 A CN201611124203 A CN 201611124203A CN 106738393 B CN106738393 B CN 106738393B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
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Abstract
The present invention designs a kind of cutting method for CdS monocrystal, belongs to the manufacture field of semi-conducting material.Step is as follows, is polished the aufwuchsplate of CdS crystal ingots with surface grinding machine；The end face polished is oriented with X-ray diffractometer；Round as a ball, then progress main reference plane and secondary plane of reference making is carried out to CdS crystal ingots；CdS crystal ingots are adsorbed with vacuum adsorption table, the main reference plane of crystal ingot is downward；Electro-spark cutting machine cutting parameter is adjusted, crystal ingot is cut；After the completion of cutting, impregnated successively using kerosene, hot alcohol is rinsed the chip after cutting, it is in 80 DEG C of hot water that fixture then is placed on temperature, makes gum softening, chip is removed, carry out next step operation.N-type CdS crystal ingots are cut using contactless spark cutting technology, cutting efficiency, the generation for reducing fragment can be greatly improved.
Description
Technical field
The present invention designs a kind of cutting method for CdS monocrystal, belongs to the manufacture field of semi-conducting material.
Background technology
Cadmium sulfide（CdS）Crystal is the II 1 VI group iii v compound semiconductor materials of direct transition type that bandwidth is 2.4eV.CdS
It is extensive that the excellent photoelectric property of monocrystalline makes it have in the preparation of the semiconductor devices such as detector, solar cell, infrared window
Application.
The processing of CdS crystal includes the techniques such as orientation, round as a ball, cutting, grinding, polishing, cleaning, in subsequent grinding, throwing
, it is necessary to which crystal ingot first is cut into the homogeneous cutting sheet of surfacing, thickness before light process, the quality of cutting technique directly affects
Subsequent processing technology.Since the thickness of CdS crystal ingots is smaller（Usually less than 1 cm）, it is carried out frequently with single line cutting technique
Cutting.In single line cutting technique, the cutting line used, by the severe friction between diamond wire and CdS crystal, makes for diamond wire
Material breaks are simultaneously split away off from parent surface, so as to achieve the effect that cutting.Since the hardness of CdS crystal is small（Mohs' hardness
Only 3.3）, brittleness it is big, in single line cutting process, easily there is fragment phenomenon, cause single line cutting yield rate it is too low；This
When outside, using traditional single line cutting technique, the orientation of crystal is through the following steps that complete：Crystal ingot is fixed on cutting press proof
In sample platform, first next small pieces are cut from crystal ingot and cutting sheet is oriented, sample stage is adjusted according to crystal orientation offset
Angle, in this process orientation, sample stage angular adjustment and cutting error so that traditional single line cutting sheet crystal orientation precision
It is not high（Deviation is often 0.3 °~0.5 °）；It is brilliant furthermore when being cut using traditional single line cutting method to CdS crystal ingots
The round as a ball operating process of ingot can be comparatively laborious, if misoperation can make cutting sheet for ellipse.
The content of the invention
In view of the situation and deficiency of the prior art, the present invention is directed to the cutting of low-resistance n-type CdS monocrystalline crystal, provides one
Kind using spark cutting technology fly-cutting CdS monocrystal method, spark cutting technology, be by electric energy and thermal energy into
Row material removes, and is a kind of untouchable cutting method, the method can both substantially reduce the risk of fragment, while can also
Greatly improve processing efficiency.
To achieve the above object, used technical solution is the present invention：It is a kind of quickly to be cut using spark cutting technology
The method for cutting CdS monocrystal, it is characterised in that：Step is as follows,
The release surface of CdS crystal ingots is pasted onto cast iron support of the total thickness variations less than 5 μm by the first step with high temperature wax
On, the aufwuchsplate of CdS crystal ingots is polished with surface grinding machine；
Second step is oriented the end face polished with X-ray diffractometer, is deviateed according to crystal orientation（0001）Offset into
Row adjustment, flat stone mill is carried out to aufwuchsplate again, until the angle that positive crystal orientation is deviateed in the end face is less than 0.5 °；
3rd step, CdS crystal ingots are removed from cast iron support, and the aufwuchsplate polished is attached in cast iron support with high temperature wax,
The release surface of crystal ingot is polished with surface grinding machine, is then snapped into cast iron support on the sample stage of rolling circle grinder, first to CdS crystal ingots
Carry out round as a ball, then progress main reference plane and secondary plane of reference making；
After the round as a ball and plane of reference completes, CdS crystal ingots are removed from cast iron support for 4th step, with alcohol that CdS is brilliant
Ingot scrubs, and is then adsorbed CdS crystal ingots with vacuum adsorption table, the main reference plane of crystal ingot downward, main reference plane and fixture
Horizontal plane leaves certain interval, can put next graphite bar, and the solid that last layer thickness is about 5mm is coated in graphite bar
Graphite bar is put into the gap by glue, and CdS crystal ingot main reference planes is made to be contacted with solid gum, and the screw of fixed estrade side makes stone
Ink-stick is fixed, and standing solidifies solid gum, and CdS crystal ingots are just pasted onto in graphite bar, and the chip after so cutting can lean on the work of glue
With without departing from graphite bar, it can prevent that the chip cut from dropping or run-off the straight is collided with other chips and occurred
Fragment accident；Electro-spark cutting machine cutting parameter is adjusted, crystal ingot is cut, pulse width 15-20, multiple is 6- between arteries and veins
10, power amplifier 4-6, feed speed are 0.8-2.8 mm/min；
5th step, after the completion of cutting, is impregnated, hot alcohol is rinsed the chip after cutting using kerosene successively, then
Fixture is placed in the hot water that temperature is 80 DEG C, makes gum softening, chip is removed, carry out next step operation.
The beneficial effects of the invention are as follows：Crystal ingot aufwuchsplate is polished using surface grinding machine, it is oriented, orientation is completed
It is round as a ball to crystal ingot progress afterwards, it so can guarantee final cutting sheet for circular rather than ellipse；The design of vacuum adsorption table, Ji Nengbao
The crystal orientation deviation for demonstrate,proving cutting sheet is less than 0.2 °, and can prevent cutting sheet from dropping and breaking into pieces from fixture.
N-type CdS crystal ingots are cut using contactless spark cutting technology, cutting effect can be greatly improved
Rate, the generation for reducing fragment.
Description of the drawings
The schematic diagram of Fig. 1 spark cutting processing crystal ingots of the present invention；
Fig. 2 is the schematic diagram of CdS crystal ingots of the present invention；
Fig. 3 is the schematic diagram that the release surface of CdS crystal ingots of the present invention and cast iron support are pasted together；
Fig. 4 is the schematic diagram after the aufwuchsplate processing of CdS crystal ingots of the present invention；
Fig. 5 is the schematic diagram after the crystal orientation bias adjustment of CdS crystal ingots of the present invention；
The schematic diagram that Fig. 6 is the aufwuchsplate of CdS crystal ingots of the present invention and cast iron support is pasted together；
Fig. 7 is the schematic diagram after the release surface processing of CdS crystal ingots of the present invention；
Fig. 8 is that CdS crystal ingots of the present invention carry out round as a ball schematic diagram；
Fig. 9 is the schematic diagram that CdS crystal ingots of the present invention carry out plane of reference making；
Figure 10 is the schematic diagram that crystal ingot of the present invention is fixed on self-control electro-spark cutting machine fixture；
Figure 11 is the side view of Figure 10；
Figure 12 is the structure diagram of vacuum adsorption table.
Specific embodiment
A kind of method using spark cutting technology fly-cutting CdS monocrystal, step are as follows：
The release surface 1-1 of CdS crystal ingots 1 is pasted onto casting of the total thickness variations less than 5 μm by the first step with high temperature wax 3
In iron support 2, the aufwuchsplate 1-2 of CdS crystal ingots 1 is polished with surface grinding machine, as shown in Figure 2 and Figure 3.
Second step is oriented the end face polished with X-ray diffractometer, is deviateed according to crystal orientation（0001）Offset into
Row adjustment, flat stone mill is carried out to aufwuchsplate 1-2 again, until the angle that positive crystal orientation is deviateed in the end face is less than 0.5 ° such as Fig. 4, Fig. 5
It is shown.
3rd step removes CdS crystal ingots 1 from cast iron support 2, and the aufwuchsplate 1-2 polished is attached to cast iron with high temperature wax 3
In support 2, the release surface 1-1 of crystal ingot is polished with surface grinding machine, then cast iron support 2 is loaded onto the sample stage of rolling circle grinder,
It carries out the round as a ball and plane of reference to CdS crystal ingots 1 to make, as shown in Fig. 6, Fig. 7, Fig. 8, Fig. 9.
4th step, will be round as a ball after CdS crystal ingots 1 be fixed to 4 fixture 4-1 of electro-spark cutting machine on, such as Fig. 1, Figure 10, Figure 11
Shown, fixture 4-1 materials are stainless steel, and the horizontal plane and vertical plane of fixture 4-1 is vertical, and prominent part is true on vertical plane
Empty absorptive table 4-2, vacuum adsorption table 4-2 faces are parallel with the vertical plane of fixture 4-1, and the overall thickness of vacuum adsorption table 4-2 table tops
Variation is less than 5 μm, and vacuum adsorption table 4-2 is equipped with attached stomata 4-2-3, cross recess 4-2-2 and circular cutting 4-2-4, it is therefore an objective to
Ensure that crystal ingot can adsorb securely, position will not move during viscose glue.
CdS crystal ingots 1 are adsorbed with vacuum adsorption table 4-2, crystal ingot main reference plane 1-3 downward, main reference plane 1-3 and fixture
4-1 horizontal planes leave certain interval, can put next graphite bar 6, and it is about 5mm's that last layer thickness is coated in graphite bar 6
Graphite bar 6 is put into the gap by solid gum 5, and 1 restricted publication of international news and commentary entitled face of CdS crystal ingots is made to be contacted with solid gum 5, fixed estrade side
Screw fixes graphite bar 6, and standing solidifies solid gum 5, and CdS crystal ingots 1 are just pasted onto in graphite bar 6, the crystalline substance after so cutting
Sector-meeting leans on the effect of glue that can prevent that the chip cut from dropping or run-off the straight is sent out with other chips without departing from graphite bar 6
Life collides with and fragment accident occurs；4 cutting parameter of electro-spark cutting machine is adjusted, crystal ingot is cut, pulse width 15-
20, multiple is 6-10 between arteries and veins, and power amplifier 4-6, feed speed is 0.8-2.8 mm/min.
5th step, after the completion of cutting, is impregnated, hot alcohol is rinsed the chip after cutting using kerosene successively, then
Fixture 4-1 is placed in the hot water that temperature is 80 DEG C, makes gum softening, chip is removed, carry out next step operation.
Vacuum adsorption table 4-2 is rounded body, on vacuum adsorption table 4-2 end faces, if there are four mounting hole 4-2-1,
Table top between four mounting hole 4-2-1 is equipped with cross recess 4-2-2, and cross recess 4-2-2 crossing centers point is absorption stomata 4-
On 2-3, the cross recess 4-2-2 outside along absorption stomata 4-2-3, twice circle cutting 4-2-4, cross recess 4-2-2 are equipped at intervals with
It is communicated with twice circle cutting 4-2-4, as shown in figure 12.
The material of vacuum adsorption table 4-2 is organic glass.
The present invention is described in detail with reference to embodiments.
The selection of embodiment 1, spark cutting technological parameter, pulse width 17, multiple is 8 between arteries and veins, power amplifier selected as
5, feed speed is 2.0 mm/min.
The selection of embodiment 2, spark cutting technological parameter, pulse width 15, multiple is 6 between arteries and veins, power amplifier selected as
4, feed speed is 0.8 mm/min.
The selection of embodiment 3, spark cutting technological parameter, pulse width 20, multiple is 10 between arteries and veins, power amplifier selected as
6, feed speed is 2.8 mm/min.
Parameter in selection example 1 is processed, and cutting efficiency can promote to 10 times, while entire CdS crystal ingots 1
Be not in fragment phenomenon in cutting process, the surface damage situation of cut crystal is shallower, can be in subsequent processing technology
Removal.
Table 1 is spark cutting and conventional single line cutting technique Comparative result.
Table 1
| Method | Cutting line | CdS crystal ingot monolithic process times（min） | TTV（μm） | Fragment rate（%） | Crystal orientation deviation（°） |
| Single line is cut | Diamond wire | 250 | 6 | 40 | 0.3-0.5 |
| Spark cutting | Molybdenum filament | 25 | 3 | 0 | ＜ 0.2 |
As seen from Table 1, traditional single line cutting is using diamond wire, and diamond wire is in crystal ingot surface high-speed motion back and forth, to crystalline substance
Ingot generates severe friction so that material breaks simultaneously come off from parent surface, and the time of monolithic cutting is 250min/ pieces, and cutting is brilliant
The TTV of piece is 6 μm, fragment rate 40%, and cutting sheet crystal orientation offset is often 0.3-0.5 °.
Spark cutting is then using molybdenum filament as electrode, and molybdenum filament is in wafer surface high-speed motion back and forth, by pulse spark
Cutting to crystal ingot is realized in electric heating effect during electric discharge, but due to molybdenum filament and crystal ingot in processing and is not directly contacted with, so not
There is the cutting force that mechanical processing macro is seen, the method, the time of cutting is 25min/ pieces, and the TTV of cut crystal is 3 μm, processed
Be not in fragmentation phenomenon in journey, and cutting sheet crystal orientation deviation is less than 0.2 °.
Claims (3)
- A kind of 1. method using spark cutting technology fly-cutting CdS monocrystal, it is characterised in that：Step is as follows,The first step uses high temperature wax（3）By CdS crystal ingots（1）Release surface（1-1）It is pasted onto a total thickness variations and is less than 5 μm Cast iron support（2）On, with surface grinding machine by CdS crystal ingots（1）Aufwuchsplate（1-2）It polishes；Second step is oriented the end face polished with X-ray diffractometer, is deviateed according to crystal orientation（0001）Offset adjusted It is whole, to aufwuchsplate（1-2）Flat stone mill is carried out again, until the angle that positive crystal orientation is deviateed in the end face is less than 0.5 °；3rd step, by CdS crystal ingots（1）From cast iron support（2）On remove, use high temperature wax（3）The aufwuchsplate that will have been polished（1-2）It is attached to Cast iron support（2）On, with surface grinding machine by the release surface of crystal ingot（1-1）It polishes, then by cast iron support（2）It is loaded and arrives rolling circle grinder On sample stage, first to CdS crystal ingots（1）It carries out round as a ball, then carries out main reference plane（1-3）With the secondary plane of reference（1-4）It makes；4th step, after the round as a ball and plane of reference completes, by CdS crystal ingots（1）From cast iron support（2）On remove, with alcohol by CdS Crystal ingot（1）It scrubs, then uses vacuum adsorption table（4-2）By CdS crystal ingots（1）It adsorbs, the main reference plane of crystal ingot（1-3）Court Under, main reference plane（1-3）With fixture（4-1）Horizontal plane leaves certain interval, can put next graphite bar（6）, in graphite bar （6）The solid gum that upper coating last layer thickness is about 5mm（5）, by graphite bar（6）It is put into the gap, makes CdS crystal ingots（1）It is main The plane of reference（1-3）With solid gum（5）Contact, the screw of fixed estrade side, makes graphite bar（6）Fixed, standing makes solid gum（5） Solidification, CdS crystal ingots（1）Just it is pasted onto graphite bar（6）On, the chip after so cutting can lean on the effect of glue without departing from graphite bar （6）, can prevent that the chip cut from dropping or run-off the straight collides with other chips and fragment accident occurs；Adjustment Electro-spark cutting machine（4）Cutting parameter cuts crystal ingot, pulse width 15-20, and multiple is 6-10 between arteries and veins, and power amplifier is 4-6, feed speed are 0.8-2.8 mm/min；5th step, after the completion of cutting, is impregnated, hot alcohol is rinsed the chip after cutting using kerosene successively, then will card Tool（4-1）It is placed in the hot water that temperature is 80 DEG C, makes gum softening, chip is removed, carry out next step operation.
- 2. a kind of method using spark cutting technology fly-cutting CdS monocrystal according to claim 1, feature It is：The vacuum adsorption table（4-2）For rounded body, in vacuum adsorption table（4-2）On end face, if there are four mounting holes（4- 2-1）, in four mounting holes（4-2-1）Between table top be equipped with cross recess（4-2-2）, cross recess（4-2-2）Crossing center point To adsorb stomata（4-2-3）, along absorption stomata（4-2-3）Outside cross recess（4-2-2）On, it is equipped at intervals with twice circle cutting （4-2-4）, cross recess（4-2-2）With twice circle cutting（4-2-4）It communicates.
- 3. a kind of method using spark cutting technology fly-cutting CdS monocrystal according to claim 1, feature It is：Shown vacuum adsorption table（4-2）Material be organic glass.
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| CN107718332B (en) * | 2017-10-23 | 2021-02-02 | 安徽中晶光技术股份有限公司 | A general clamping frock for crystal line cutting |
| JP6974133B2 (en) * | 2017-11-22 | 2021-12-01 | 株式会社ディスコ | How to mold a SiC ingot |
| CN108214955B (en) * | 2018-01-03 | 2019-08-20 | 中国科学院上海硅酸盐研究所 | A kind of directional cutting device and processing method for gallium nitride |
| CN109080012A (en) * | 2018-08-23 | 2018-12-25 | 中国工程物理研究院激光聚变研究中心 | Crystal orientation angle correction method |
| CN114311350B (en) * | 2022-03-15 | 2022-06-28 | 天通控股股份有限公司 | Head and tail cutting method for lithium tantalate crystal |
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| JPS61252025A (en) * | 1985-05-01 | 1986-11-10 | Fujikura Ltd | Electrode wire for wire electric discharge machining and manufacture thereof |
| JPH10330869A (en) * | 1997-06-04 | 1998-12-15 | Sumitomo Metal Mining Co Ltd | Electrode wire for wire-cut electric discharge machining |
| CN101138869A (en) * | 2007-10-12 | 2008-03-12 | 南京航空航天大学 | Monocrystalline silicon high-efficient composite cutting method and cutting system thereof |
| CN103386715A (en) * | 2012-05-11 | 2013-11-13 | 无锡奥特维科技有限公司 | Method for preparing single-crystal-like seed crystal by electric spark process |
| CN103341919B (en) * | 2013-07-29 | 2015-08-05 | 山东大海新能源发展有限公司 | Improve polycrystalline silicon rod section rate pretreating process |
| CN203754763U (en) * | 2014-01-06 | 2014-08-06 | 天津大学 | Combined ultrasonic impact and electrical spark processing device |
| CN204736347U (en) * | 2015-07-01 | 2015-11-04 | 西安理工大学 | SiC single -chip differential of arc fine cutting equipment that discharges |
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