CN103329007B - 具有包括两个或更多个可供选择地可选的和分离的子阳极的阳极的光子计数检测器像素 - Google Patents

具有包括两个或更多个可供选择地可选的和分离的子阳极的阳极的光子计数检测器像素 Download PDF

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Publication number
CN103329007B
CN103329007B CN201280005817.7A CN201280005817A CN103329007B CN 103329007 B CN103329007 B CN 103329007B CN 201280005817 A CN201280005817 A CN 201280005817A CN 103329007 B CN103329007 B CN 103329007B
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sub
anode
anodes
imaging system
radiation
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Chinese (zh)
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CN103329007A (zh
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C·赫尔曼
O·米尔亨斯
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
    • A61B6/4233—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
    • H05G1/08—Electrical details
    • H05G1/56—Switching-on; Switching-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Molecular Biology (AREA)
  • Measurement Of Radiation (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Engineering & Computer Science (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
CN201280005817.7A 2011-01-17 2012-01-10 具有包括两个或更多个可供选择地可选的和分离的子阳极的阳极的光子计数检测器像素 Active CN103329007B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161433336P 2011-01-17 2011-01-17
US61/433,336 2011-01-17
PCT/IB2012/050105 WO2012098477A2 (en) 2011-01-17 2012-01-10 Photon counting detector pixel having an anode including two or more alternatively selectable and separate sub-anodes

Publications (2)

Publication Number Publication Date
CN103329007A CN103329007A (zh) 2013-09-25
CN103329007B true CN103329007B (zh) 2015-11-25

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CN201280005817.7A Active CN103329007B (zh) 2011-01-17 2012-01-10 具有包括两个或更多个可供选择地可选的和分离的子阳极的阳极的光子计数检测器像素

Country Status (6)

Country Link
US (1) US9318518B2 (enExample)
EP (1) EP2666035B1 (enExample)
JP (1) JP2014508567A (enExample)
CN (1) CN103329007B (enExample)
RU (1) RU2578252C2 (enExample)
WO (1) WO2012098477A2 (enExample)

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EP2932299B1 (en) * 2012-12-14 2019-03-27 Koninklijke Philips N.V. Detector unit with pulse shaper
CN105830432B (zh) * 2013-12-09 2019-05-10 浜松光子学株式会社 二维光子计数元件
US10117628B2 (en) * 2014-10-01 2018-11-06 Toshiba Medical Systems Corporation Photon counting apparatus
WO2016066850A1 (en) * 2014-10-31 2016-05-06 Koninklijke Philips N.V. Sensor device and imaging system for detecting radiation signals
WO2017031740A1 (en) * 2015-08-27 2017-03-02 Shenzhen Xpectvision Technology Co., Ltd. X-ray imaging with a detector capable of resolving photon energy
US20220057533A1 (en) * 2016-05-10 2022-02-24 Carestream Health, Inc. Flexible substrate chip-on flex repair
EP3658033A4 (en) * 2017-07-26 2021-02-24 Shenzhen Xpectvision Technology Co., Ltd. SYSTEM WITH A SPATIAL EXTENSION X-RAY SOURCE FOR X-RAY IMAGING
US10324202B1 (en) * 2018-01-02 2019-06-18 General Electric Company Systems and methods for collecting radiation detection
EP3978959B1 (en) * 2020-09-30 2024-07-17 Detection Technology Oyj Detector pixels in floating or detection modes
US11953452B2 (en) * 2021-03-01 2024-04-09 Redlen Technologies, Inc. Ionizing radiation detector with reduced street width and improved count rate stability

Citations (3)

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CN2273016Y (zh) * 1995-09-22 1998-01-21 清华大学 Ｘ、γ辐射成象正比计数器阵列探测装置
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
CN101858983A (zh) * 2009-04-06 2010-10-13 皇家飞利浦电子股份有限公司 具有多个电极系统的辐射探测器

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US5461226A (en) * 1993-10-29 1995-10-24 Loral Infrared & Imaging Systems, Inc. Photon counting ultraviolet spatial image sensor with microchannel photomultiplying plates
US6037595A (en) * 1995-10-13 2000-03-14 Digirad Corporation Radiation detector with shielding electrode
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6034373A (en) * 1997-12-11 2000-03-07 Imrad Imaging Systems Ltd. Semiconductor radiation detector with reduced surface effects
GB0201260D0 (en) * 2002-01-21 2002-03-06 Europ Org For Nuclear Research A sensing and imaging device
JP3900992B2 (ja) * 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
JP2007524234A (ja) 2003-12-30 2007-08-23 ディクスレイ，インコーポレイティド ピクセル化されたカドミウム亜鉛テルライドに基づいた光子カウントモード検出器
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Publication number Priority date Publication date Assignee Title
CN2273016Y (zh) * 1995-09-22 1998-01-21 清华大学 Ｘ、γ辐射成象正比计数器阵列探测装置
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
CN101858983A (zh) * 2009-04-06 2010-10-13 皇家飞利浦电子股份有限公司 具有多个电极系统的辐射探测器

Non-Patent Citations (1)

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Title
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Also Published As

Publication number Publication date
US20130287172A1 (en) 2013-10-31
WO2012098477A3 (en) 2012-11-15
EP2666035A2 (en) 2013-11-27
RU2013138461A (ru) 2015-02-27
RU2578252C2 (ru) 2016-03-27
EP2666035B1 (en) 2015-10-21
WO2012098477A2 (en) 2012-07-26
CN103329007A (zh) 2013-09-25
US9318518B2 (en) 2016-04-19
JP2014508567A (ja) 2014-04-10

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