JP2014508567A - 2つ又はこれ以上の代替的に選択可能で別々のサブ陽極を含む陽極を持つ光子計数検出器ピクセル - Google Patents
2つ又はこれ以上の代替的に選択可能で別々のサブ陽極を含む陽極を持つ光子計数検出器ピクセル Download PDFInfo
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
- A61B6/42—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis
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- A61B6/4233—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
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- H—ELECTRICITY
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- H05G—X-RAY TECHNIQUE
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Abstract
Description
Claims (20)
- 撮像システムであって、
検査領域を横断する放射線を放出する放射線源と、
前記検査領域を横断する放射線を検出し、前記検出された放射線を示す信号を生成する複数の光子計数検出器ピクセルを備える検出器アレイであって、光子計数検出器ピクセルが、
第1の放射線受信側面及び第2の対向する側面を持つ直接変換層、
前記第1の側面の全部又は実質的な部分に付けられ、及びこれを覆う陰極、
前記第2の側面の中央に位置する領域に付けられ、少なくとも2つのサブ陽極を含む陽極、並びに
前記陽極及び前記陽極領域を囲む、前記第2の側面につけられる金属化であって、前記陽極及び前記金属化の間にギャップがある、金属化を含む、検出器アレイと、
前記検査領域を示すボリュメトリック画像データを生成するため、前記信号を再構成する再構成器とを有する、撮像システム。 - 少なくとも2つのボンディングパッドを持つ基板であって、前記ボンディングパッドが、前記少なくとも2つのサブ陽極のそれぞれに対応する、基板を更に有し、前記少なくとも2つのボンディングパッドの各々が、前記少なくとも2つのサブ陽極の異なる1つに物理的及び電気的に結合される、請求項1の撮像システム。
- 処理電子部品と、
前記少なくとも2つのボンディングパッドの単一の1つだけを前記処理電子部品に代替的に電気的に結合するよう構成されるスイッチング電子部品とを更に有する、請求項2の撮像システム。 - 前記ボンディングパッドに物理的及び電気的に結合される前記サブ陽極が、所定の陽極電位に維持される、請求項3の撮像システム。
- 前記他のサブ陽極が、浮動的な電位に保たれる、請求項4の撮像システム。
- 前記ギャップが、パシベーション層を含む、請求項1乃至5のいずれかに記載の撮像システム。
- 前記中央に位置する領域が、直径約100から300ミクロンである、請求項1乃至6のいずれかに記載の撮像システム。
- サブ陽極が、直径約25から125ミクロンである、請求項1乃至7のいずれかに記載の撮像システム。
- 陽極及び金属化の間の前記ギャップが、少なくとも、約10ミクロンから約40ミクロンの範囲にある、請求項1乃至8のいずれかに記載の撮像システム。
- 検出器のピクセル中央間の距離が、約200ミクロンから約1.5ミリメートルの範囲にある、請求項1乃至9のいずれかに記載の撮像システム。
- 検出器ピクセル長が、約200ミクロンから約1.5ミリメートルの範囲にある、請求項1乃至10のいずれかに記載の撮像システム。
- 前記少なくとも2つのサブ陽極が、3つのサブ陽極である、請求項1乃至11のいずれかに記載の撮像システム。
- 少なくとも1つのサブパッドと少なくとも1つの対応するボンディングパッドとの間の電気接続を持つことに対応するボンディング収率が、約90から100パーセントの範囲にある、請求項1乃至12のいずれかに記載の撮像システム。
- 前記直接変換層が、カドミウムテルル化物又はカドミウム亜鉛テルル化物の少なくとも1つを含む直接変換層を含む、請求項1乃至13のいずれかに記載の撮像システム。
- 光子計数検出器ピクセルを用いて検査領域を横断する放射線を検出するステップを有し、前記光子計数検出器ピクセルが、金属化により集合的に囲まれる、少なくとも2つの物理的及び電気的に分離したサブ陽極を持つ陽極を含み、前記少なくとも2つのサブ陽極が、基板の対応するサブボンディングパッドに結合され、電気スイッチは、前記基板の処理電子部品と前記少なくとも2つのサブボンディングパッドの単一の1つだけとを電気的に接続する、方法。
- 前記少なくとも2つのボンディングパッドの単一の1つに結合される前記サブ陽極を所定の陽極電位維持するステップを更に有する、請求項15に記載の方法。
- 前記処理電子部品に電気的に接続されないボンディングパッドに結合される前記サブ陽極を浮動的な電位維持するステップを更に有する、請求項15又は16に記載の方法。
- サブ陽極と対応するサブボンディングパッドとの間の相互接続が、前記サブ陽極と前記サブボンディングパッドとの間の電気経路を提供することを決定するステップと、
これに応じて、前記処理電子部品と電気通信可能な前記少なくとも2つのサブボンディングパッドの単一の1つとして前記対応するサブボンディングパッドを選択するステップとを更に有する、請求項15乃至17のいずれかに記載の方法。 - サブ陽極と対応するサブボンディングパッドとの間の結合が、前記サブ陽極と前記サブボンディングパッドとの間の電気経路を提供しないことを決定するステップと、
これに応じて、前記処理電子部品から前記サブボンディングパッドを非接続状態にするステップとを更に有する、請求項15乃至17のいずれかに記載の方法。 - 検出器アレイであって、
処理電子部品と、
駆動電極により集合的に囲まれる少なくとも2つの分離したサブ陽極を持つ陽極を含む少なくとも1つの光子計数検出器ピクセルとを有し、
前記少なくとも2つのサブ陽極の単一の1つだけが、前記処理電子部品と電気通信可能である、検出器アレイ。
Applications Claiming Priority (3)
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US201161433336P | 2011-01-17 | 2011-01-17 | |
US61/433,336 | 2011-01-17 | ||
PCT/IB2012/050105 WO2012098477A2 (en) | 2011-01-17 | 2012-01-10 | Photon counting detector pixel having an anode including two or more alternatively selectable and separate sub-anodes |
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JP2014508567A true JP2014508567A (ja) | 2014-04-10 |
JP2014508567A5 JP2014508567A5 (ja) | 2017-01-19 |
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US (1) | US9318518B2 (ja) |
EP (1) | EP2666035B1 (ja) |
JP (1) | JP2014508567A (ja) |
CN (1) | CN103329007B (ja) |
RU (1) | RU2578252C2 (ja) |
WO (1) | WO2012098477A2 (ja) |
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US9664797B2 (en) * | 2012-12-14 | 2017-05-30 | Koninklijke Philips N.V. | Detector unit with pulse shaper |
CN105830432B (zh) * | 2013-12-09 | 2019-05-10 | 浜松光子学株式会社 | 二维光子计数元件 |
US10117628B2 (en) * | 2014-10-01 | 2018-11-06 | Toshiba Medical Systems Corporation | Photon counting apparatus |
CN106662661B (zh) * | 2014-10-31 | 2019-06-25 | 皇家飞利浦有限公司 | 用于探测辐射信号的传感器设备和成像系统 |
WO2017031740A1 (en) * | 2015-08-27 | 2017-03-02 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray imaging with a detector capable of resolving photon energy |
WO2017196713A1 (en) * | 2016-05-10 | 2017-11-16 | Carestream Health, Inc. | Flexible substrate chip-on flex repair |
CN111107788B (zh) * | 2017-07-26 | 2023-12-19 | 深圳帧观德芯科技有限公司 | 具有空间扩展性x射线源的x射线成像系统 |
US10324202B1 (en) * | 2018-01-02 | 2019-06-18 | General Electric Company | Systems and methods for collecting radiation detection |
US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
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2012
- 2012-01-10 JP JP2013548914A patent/JP2014508567A/ja not_active Ceased
- 2012-01-10 US US13/979,707 patent/US9318518B2/en active Active
- 2012-01-10 WO PCT/IB2012/050105 patent/WO2012098477A2/en active Application Filing
- 2012-01-10 EP EP12701380.3A patent/EP2666035B1/en active Active
- 2012-01-10 RU RU2013138461/28A patent/RU2578252C2/ru not_active IP Right Cessation
- 2012-01-10 CN CN201280005817.7A patent/CN103329007B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10512372A (ja) * | 1995-10-13 | 1998-11-24 | ディジラッド,インコーポレーテッド | 電荷収集能を高めた半導体放射線検出器 |
JP2003294845A (ja) * | 2002-04-02 | 2003-10-15 | Hitachi Ltd | 放射線検出器及び放射線検査装置 |
JP2009078143A (ja) * | 2007-09-26 | 2009-04-16 | General Electric Co <Ge> | エネルギ識別データを自在にまとめる方法及び装置 |
WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
US20100252744A1 (en) * | 2009-04-06 | 2010-10-07 | Koninklijke Philips Electronics N.V. | Radiation detector with a plurality of electrode systems |
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RU2578252C2 (ru) | 2016-03-27 |
CN103329007A (zh) | 2013-09-25 |
WO2012098477A2 (en) | 2012-07-26 |
WO2012098477A3 (en) | 2012-11-15 |
CN103329007B (zh) | 2015-11-25 |
US9318518B2 (en) | 2016-04-19 |
US20130287172A1 (en) | 2013-10-31 |
RU2013138461A (ru) | 2015-02-27 |
EP2666035B1 (en) | 2015-10-21 |
EP2666035A2 (en) | 2013-11-27 |
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