CN103274683A - Ito溅射靶的生产方法 - Google Patents
Ito溅射靶的生产方法 Download PDFInfo
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- CN103274683A CN103274683A CN2013102054586A CN201310205458A CN103274683A CN 103274683 A CN103274683 A CN 103274683A CN 2013102054586 A CN2013102054586 A CN 2013102054586A CN 201310205458 A CN201310205458 A CN 201310205458A CN 103274683 A CN103274683 A CN 103274683A
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- sputtering target
- ito sputtering
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- ito
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000843 powder Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000001556 precipitation Methods 0.000 claims abstract description 26
- 239000000725 suspension Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 18
- 230000032683 aging Effects 0.000 claims abstract description 16
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000002244 precipitate Substances 0.000 claims abstract description 5
- 238000005406 washing Methods 0.000 claims abstract description 5
- 150000003839 salts Chemical class 0.000 claims description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 15
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005755 formation reaction Methods 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- 238000000748 compression moulding Methods 0.000 claims description 2
- 239000001117 sulphuric acid Substances 0.000 claims description 2
- 235000011149 sulphuric acid Nutrition 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims 1
- 238000000280 densification Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 238000005204 segregation Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 7
- 239000007788 liquid Substances 0.000 abstract 3
- 239000012716 precipitator Substances 0.000 abstract 2
- 239000012266 salt solution Substances 0.000 abstract 2
- 239000002574 poison Substances 0.000 abstract 1
- 231100000614 poison Toxicity 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 30
- 239000010409 thin film Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000003252 repetitive effect Effects 0.000 description 5
- 238000005201 scrubbing Methods 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 231100000572 poisoning Toxicity 0.000 description 4
- 230000000607 poisoning effect Effects 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000703 high-speed centrifugation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
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Abstract
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Claims (8)
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CN201310205458.6A CN103274683B (zh) | 2013-05-29 | 2013-05-29 | Ito溅射靶的生产方法 |
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CN201310205458.6A CN103274683B (zh) | 2013-05-29 | 2013-05-29 | Ito溅射靶的生产方法 |
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CN103274683A true CN103274683A (zh) | 2013-09-04 |
CN103274683B CN103274683B (zh) | 2015-02-04 |
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CN201310205458.6A Active CN103274683B (zh) | 2013-05-29 | 2013-05-29 | Ito溅射靶的生产方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107365967A (zh) * | 2017-07-06 | 2017-11-21 | 安徽拓吉泰新型陶瓷科技有限公司 | 一种azo溅射靶的制备方法 |
CN111116194A (zh) * | 2019-12-19 | 2020-05-08 | 广西晶联光电材料有限责任公司 | 一种超高密度细晶ito靶材的生产方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080173962A1 (en) * | 2007-01-22 | 2008-07-24 | Samsung Corning Co., Ltd. | Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same |
CN101812665A (zh) * | 2010-03-26 | 2010-08-25 | 北京化工大学 | 单相结构-高密度铟锡氧化物靶材的制备方法 |
CN102795662A (zh) * | 2012-08-29 | 2012-11-28 | 天津大学 | 一种制备有序介孔氧化铟锡材料的方法 |
-
2013
- 2013-05-29 CN CN201310205458.6A patent/CN103274683B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080173962A1 (en) * | 2007-01-22 | 2008-07-24 | Samsung Corning Co., Ltd. | Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same |
CN101812665A (zh) * | 2010-03-26 | 2010-08-25 | 北京化工大学 | 单相结构-高密度铟锡氧化物靶材的制备方法 |
CN102795662A (zh) * | 2012-08-29 | 2012-11-28 | 天津大学 | 一种制备有序介孔氧化铟锡材料的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107365967A (zh) * | 2017-07-06 | 2017-11-21 | 安徽拓吉泰新型陶瓷科技有限公司 | 一种azo溅射靶的制备方法 |
CN111116194A (zh) * | 2019-12-19 | 2020-05-08 | 广西晶联光电材料有限责任公司 | 一种超高密度细晶ito靶材的生产方法 |
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CN103274683B (zh) | 2015-02-04 |
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Owner name: ANHUI TUOJITAI NEW CERAMICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHANG TIANSHU Effective date: 20140106 |
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Effective date of registration: 20140106 Address after: Eagle Industrial Park No. 767 high tech Zone Hefei city Anhui province 230088 Magnolia Avenue No. 3 comprehensive layer Applicant after: ANHUI TUOJITAI NOVEL CERAMIC TECHNOLOGY CO., LTD. Address before: Yimin street in Luyang District of Hefei City, Anhui province 230061 37 Building No. 1 room 607 Applicant before: Zhang Tianshu |
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