CN103261348A - 半导体用粘合剂组合物、含其的粘合剂膜和使用其的半导体封装 - Google Patents

半导体用粘合剂组合物、含其的粘合剂膜和使用其的半导体封装 Download PDF

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CN103261348A
CN103261348A CN2011800604561A CN201180060456A CN103261348A CN 103261348 A CN103261348 A CN 103261348A CN 2011800604561 A CN2011800604561 A CN 2011800604561A CN 201180060456 A CN201180060456 A CN 201180060456A CN 103261348 A CN103261348 A CN 103261348A
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binder
binder composition
weldering
composition according
epoxy
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CN103261348B (zh
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片雅滥
鱼东善
宋基态
赵宰贤
金仁焕
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Cheil Industries Inc
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Cheil Industries Inc
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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Abstract

提供了一种高流动性的半导体用粘合剂组合物，其中该组合物：包含具有特定结构的助焊活性固化剂；允许满足隆起-芯片电连接的可靠性需要并去除在焊料和Cu隆起上作为隆起-芯片接触层的任何氧化膜的助焊过程；在通过热压缩焊接的芯片焊接过程中确保焊料和隆起之间充分的相互接触。还提供了一种含该组合物的粘合剂膜和使用该组合物的半导体封装。

Description

半导体用粘合剂组合物、含其的粘合剂膜和使用其的半导体封装
技术领域
本发明涉及一种半导体用粘合剂组合物和包含该组合物的粘合剂膜。更具体地，本发明涉及一种半导体用粘合剂组合物和包含该组合物的粘合剂膜，该组合物包含呈现助焊活性（flux activity）并与环氧树脂进行固化反应的酸酐助焊活性固化剂，因此不仅提供绝缘粘合剂层的助焊作用和固化控制，还保持液体稳定性，而不会因安装后剩余的酸引起缺陷。
背景技术
为了实现高容量半导体装置，使用诸如增加每单位面积的元件数目的大规模集成的定性方法和诸如封装多个堆叠的芯片以增加容量的定量方法。
作为封装方法，通常使用常规的多芯片封装（MCP），其中用粘合剂堆叠多个芯片，并且通过导线接合（wire bonding）电连接上、下芯片。然而，由于除了用于堆叠芯片的空间，用于导线接合的空间增加了总的封装尺寸，所以存在多余的空间。
为了克服MCP的上述缺点，已经引入了晶圆级堆叠封装（WSP）。在WSP中，硅通孔（TSV）在电路形成的晶圆上形成并用导电材料填充以直接电连接各层。
MCP和WSP为增加半导体装置容量的定量方法，其中由粘合剂粘结和堆叠多个芯片。
随着近来较小的大规模集成电子设备的趋势，在半导体装置安装中使用最小面积的倒装芯片受到很大的关注。隆起在用于倒装芯片安装的半导体装置的铝电极上形成，并电连接至电路板上的导线。隆起通常由焊料形成，并且焊料隆起在暴露的铝电极上形成并通过沉积或电镀连接至芯片的内部导线。此外，还使用在导线连接装置中形成的金柱形隆起。
当通过倒装芯片连接的半导体装置照此使用时，由于连接部分的电极暴露于空气，并且芯片和面板之间的线性膨胀系数差大，因此大量的应力通过来自诸如焊料回流的后续工艺的热施加到隆起的连接部分，从而引起安装中的可靠性问题。为解决该问题并提高隆起连接到面板后连接部分的可靠性，用树脂糊或粘合剂膜填充半导体装置和面板之间的空隙并固化，从而将半导体装置固定到面板。这里，使用诸如有机酸的常规助焊活性剂以去除在焊料上的氧化层并易于金属连接。然而，当助焊活性剂剩余时，会产生诸如孔隙的气泡，导线会因酸性元素腐蚀，并且连接可靠性会降低。因此，需要用于清除剩余的助焊活性剂的助焊过程。然而，当半导体芯片和面板之间的间隙窄时，难以清除剩余的助焊活性剂。因此，需要开发不涉及额外的助焊过程的绝缘粘合剂层。
为了开发不涉及额外的助焊过程的绝缘粘合剂层，诸如羧酸和癸二酸的酸直接用在常规的方法中。但是，直接应用这样的酸会引起绝缘粘合剂层的液体稳定性的下降和膜形状在室温下稳定性的下降。而且，绝缘粘合剂层的固化由于酸而不能合适地控制。此外，剩余的酸在产品上安装后会引起诸如隆起腐蚀和铁迁移的缺陷。
发明内容
技术问题
本发明的一个方面是提供一种半导体装置用粘合剂组合物和包含该组合物的粘合剂膜，所述组合物不仅提供绝缘粘合剂层的助焊作用和固化控制，还保持液体稳定性，而不会因安装后剩余的酸引起缺陷。
本发明的另一个方面是提供一种半导体装置用粘合剂组合物和包含该组合物的粘合剂膜，所述组合物不会引起因助焊活性固化剂与环氧树脂反应的固化剂活性的降低，以及伴随的诸如剩余的未反应固化剂在高温下分解的缺陷。
本发明的再一个方面是提供一种半导体装置用粘合剂组合物和包含该组合物的粘合剂膜，所述组合物可在250℃或以上稳定地应用到用于晶片接合的硅通孔（TSV）封装中。
本发明的又一个方面是提供一种半导体装置用粘合剂组合物和包含该组合物的粘合剂膜，所述粘合剂组合物具有优异的隆起芯片之间的电连接可靠性。
本发明的又一个方面是提供一种具有高流动性的半导体装置用粘合剂组合物和包含该组合物的粘合剂膜，所述组合物使去除金属隆起和焊料的氧化层的助焊过程成为可能，并通过热压缩使隆起或焊料在芯片接合中彼此完全连接。
本发明的又一个方面是提供一种使用上述粘合剂膜的半导体封装。
技术方案
本发明的一个方面提供了一种半导体装置用粘合剂组合物。所述粘合剂组合物包含至少一种由化学式1至3表示的助焊活性固化剂：
[化学式1]
Figure BDA00003348927300031
其中，A表示含有酸酐部分并包含0至3个双键的C4至C8环结构；B表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R1选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为0至2的整数，
[化学式2]
Figure BDA00003348927300032
其中，C表示含有酸酐部分并包含0至3个双键的C4至C8环结构；D表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R2选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为1至4的整数，
[化学式3]
Figure BDA00003348927300033
其中，E表示含有酸酐部分并包含0至3个双键的C4至C8环结构；F表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R3选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；R4选自由以下化学式（i）至（viii）表示的化合物；且n为1至4的整数，
Figure BDA00003348927300041
在一个实施方式中，所述助焊活性固化剂相对于粘合剂组合物的总量可按为0.1wt%至10wt%的量存在。
所述助焊活性固化剂可具有约100℃至约300℃的熔点。
所述组合物在260℃可具有约2×104泊至约15×104泊的熔体粘度。
所述组合物可具有接合后约10度至约80度的焊料与金属隆起的接触角。
所述组合物可在所述金属隆起和所述焊料之间形成金属间化合物层，以便所述金属间化合物层相对于接合后的接合面积具有的约70%或更大的面积。
所述组合物可包含约0.1wt%至约5wt%的咪唑类固化催化剂。
在一个实施方式中，所述组合物可包含聚合物树脂、环氧树脂、至少一种由化学式1至3表示的助焊活性固化剂、填料和固化催化剂。
具体地，所述组合物基于固含量可包含约20wt%至60wt%的所述聚合物树脂、约10wt%至60wt%的所述环氧树脂、约0.1wt%至10wt%的所述助焊活性固化剂、约0.01wt%至5wt%的所述固化催化剂和约15wt%至40wt%的所述填料。
所述聚合物树脂可包含环氧基团并具有约﹣30℃至80℃的玻璃化转变温度。
在一个实施方式中，所述组合物可进一步包含约0.01wt%至10wt%的硅烷偶联剂。
本发明的另一个方面提供了一种包含上述粘合剂组合物的半导体用粘合剂膜。
本发明的再一个方面提供了一种使用半导体用粘合剂膜粘结的半导体封装。所述半导体封装包含芯片安装基板，以及在所述芯片固定基板的一个表面上堆叠的第一和第二半导体芯片。这里，第一和第二半导体芯片由上述粘合剂膜彼此粘结。
有益效果
本发明具有的有益效果为粘合剂组合物不仅提供了绝缘粘合剂层的助焊作用和固化控制，还保持了液体稳定性，而不会因安装后剩余的酸而引起缺陷。此外，粘合剂组合物防止了由于助焊活性固化剂与环氧树脂反应引起的固化剂的活性的降低，以及伴随的诸如剩余的未反应的固化剂在高温的分解缺陷。此外，粘合剂组合物可在250℃或以上稳定地应用到用于晶片接合的硅通孔（TSV）封装中。而且，粘合剂组合物在隆起芯片之间具有优异的电连接可靠性，使去除金属隆起和焊料的氧化层的助焊过程成为可能，并通过热压缩使隆起和焊料在芯片接合中彼此完全连接。本发明还具有包含粘合剂组合物的粘合剂膜和使用粘合剂组合物的半导体封装提供的有益效果。
具体实施方式
除非另外定义，文中提到的含量基于固含量。此外，丙烯酸树脂同时包括丙烯酸酯树脂和甲基丙烯酸酯树脂。
在一个实施方式中，粘合剂组合物包含聚合物树脂、环氧树脂、至少一种由化学式1至3表示的助焊活性固化剂、填料和固化催化剂。
具体地，所述组合物基于固含量可包含约20wt%至60wt%的聚合物树脂、约10wt%至60wt%的环氧树脂、约0.1wt%至10wt%的助焊活性固化剂、约0.01wt%至5wt%的固化催化剂和约15wt%至40wt%的填料。
聚合物树脂
聚合物树脂的实例可包括但不限于聚酰亚胺树脂、聚苯乙烯树脂、聚乙烯树脂、聚酯树脂、聚酰胺树脂、丁二烯橡胶、丙烯酸橡胶、(甲基)丙烯酸树脂、氨基甲酸乙酯树脂、聚苯醚树脂、聚醚酰亚胺树脂、苯氧树脂、聚碳酸酯树脂、改性的聚苯醚树脂和它们的混合物。聚合物树脂可优选包含环氧基。在一个实施方式中，可使用含环氧基的(甲基)丙烯酸共聚物。
所述聚合物树脂可具有约﹣30℃至80℃的玻璃化转变温度，优选约0℃至60℃，更优选约5℃至35℃。在该范围内，可获得高流动性以达到优异的孔隙去除效率（voidelimination efficiency），并且还可确保粘结力和可靠性。
在一个实施方式中，所述聚合物树脂具有50,000g/mol至5,000,000g/mol的重均分子量。
相对于的粘合剂组合物的总量，聚合物树脂基于固含量可按约20wt%至60wt%的量存在，优选25wt%至50wt%，更优选25wt%至45wt%。
环氧树脂
环氧树脂用于完成固化和粘结作用，并可为液体环氧树脂、固体环氧树脂或它们的混合物。
液体环氧树脂的实例可包括但不限于双酚A型液体环氧树脂、双酚F型液体环氧树脂、大于三官能的多官能团液体环氧树脂、橡胶改性的液体环氧树脂、氨基甲酸乙酯改性的液体环氧树脂、丙烯酸改性的液体环氧树脂和光敏液体环氧树脂。这些环氧树脂可单独使用或作为它们的混合物使用。具体地，可使用双酚A型液体环氧树脂。
液体环氧树脂（b1）可具有约100g/eq至约1500g/eq的环氧当量，优选150g/eq至约800g/eq，更优选约150g/eq至约400g/eq。在该范围内，固化的产品可呈现优异的粘结力，保持玻璃化转变温度，并具有卓越的耐热性。
此外，液体环氧树脂可具有约100g/mol至1,000g/mol的重均分子量。在该范围内，树脂呈现优异的流动性。
作为固体环氧树脂，可使用在室温下为固态或接近固态且具有至少一个官能团的环氧树脂。具体地，可使用具有约30℃至100℃的软化点（SP）的环氧树脂。例如，固体环氧树脂可包括双酚类环氧树脂、苯酚酚醛类环氧树脂、邻甲酚酚醛类环氧树脂、多官能环氧树脂、胺类环氧树脂、含杂环的环氧树脂、取代的环氧树脂、萘酚环氧树脂和它们的衍生物。
可商购的固体环氧树脂产品包括以下产品。双酚类环氧树脂的实例包括YD-017H、YD-020、YD020-L、YD-014、YD-014ER、YD-013K、YD-019K、YD-019、YD-017R、YD-017、YD-012、YD-011H、YD-011S、YD-011、YDF-2004和YDF-2001（Kukdo ChemicalCo.,Ltd）。苯酚酚醛类环氧树脂的实例包括EPIKOTETM152和EPIKOTETM154（YukaShell Epoxy Co.,Ltd）、EPPN-201（Nippon Kayaku Co.,Ltd）、D.E.N.TM438（DowChemical Co.）和YDPN-641、YDPN-638A80、YDPN-638、YDPN-637、YDPN-644和YDPN-631（Kukdo Chemical Co.,Ltd）。邻甲酚酚醛类环氧树脂的实例包括YDCN-500-1P、YDCN-500-2P、YDCN-500-4P、YDCN-500-5P、YDCN-500-7P、YDCN-500-8P、YDCN-500-10P、YDCN-500-80P、YDCN-500-80PCA60、YDCN-500-80PBC60、YDCN-500-90P和YDCN-500-90PA75（Kukdo Chemical Co.,Ltd）、EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、EOCN-1025和EOCN-1027（NipponKayaku Co.,Ltd）、YDCN-701、YDCN-702、YDCN-703和YDCN-704（Tohto Kasei Co.,Ltd.）和
Figure BDA00003348927300061
N-665-EXP（Dainippon Ink and Chemicals,Inc.）。双酚类酚醛环氧树脂的实例包括KBPN-110、KBPN-120和KBPN-115（Kukdo Chemical Co.,Ltd.）。多官能环氧树脂的实例包括EPONTM1031S（Yuka Shell Epoxy Co.,Ltd.）、0163（Ciba Specialty Chemicals）、
Figure BDA00003348927300063
EX-611、
Figure BDA00003348927300064
EX-614、
Figure BDA00003348927300065
EX-614B、
Figure BDA00003348927300066
EX-622、
Figure BDA00003348927300067
EX-512、
Figure BDA00003348927300068
EX-521、
Figure BDA00003348927300069
EX-421、
Figure BDA00003348927300071
EX-411和
Figure BDA00003348927300072
EX-321（Nagase ChemteX Corp.）和EP-5200R、KD-1012、EP-5100R、KD-1011、KDT-4400A70、KDT-4400、YH-434L、YH-434和YH-300（Kukdo Chemical Co.,Ltd.）。胺类环氧树脂的实例包括EPIKOTETM604（Yuka ShellEpoxy Co.,Ltd.）、YH-434（Tohto Kasei Co.,Ltd.）、
Figure BDA00003348927300073
X和
Figure BDA00003348927300074
C（Mitsubishi Gas Chemical Company Co.,Inc.）和ELM-120（Sumitomo Chemical Co.,Inc.）。含杂环的环氧树脂的实例为
Figure BDA00003348927300075
PT-810（Ciba Specialty Chemicals）。取代的环氧树脂的实例包括ERL-4234、ERL-4299、ERL-4221和ERL-4206（Union CarbideCorp）。萘酚类环氧树脂的实例包括
Figure BDA00003348927300076
HP-4032、
Figure BDA00003348927300077
HP-4032D、
Figure BDA00003348927300078
HP-4700和
Figure BDA00003348927300079
4701（Dainippon Ink and Chemicals,Inc.）。这些环氧树脂可单独使用或以它们的两种或更多种组合使用。
相对于粘合剂组合物在固态中的总量，环氧树脂可按约10wt%至60wt%的量存在，优选约20wt%至50wt%，更优选约25wt%至45wt%。在该范围内，环氧树脂可确保粘合剂组合物优异的可靠性和机械性质。具体地，当环氧树脂的含量由“b”表示且聚合物树脂的含量由“a”表示（固含量）时，a<b。在这种情况下，可获得优异的可靠性。
助焊活性固化剂
粘合剂组合物包含至少一种由化学式1至3表示的助焊活性固化剂：
[化学式1]
其中，A表示包含有酸酐部分并包含0至3个双键的C4至C8环结构；B表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R1选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为0至2的整数；
[化学式2]
Figure BDA000033489273000711
其中，C表示含有酸酐部分并包含0至3个双键的C4至C8环结构；D表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R2选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为1至4的整数；和
[化学式3]
Figure BDA00003348927300081
其中，E表示含有酸酐部分并包含0至3个双键的C4至C8环结构；F表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R3选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；R4选自由以下化学式（i）至（viii）表示的化合物；且n为1至4的整数，
Figure BDA00003348927300082
助焊活性固化剂的实例可包括但不限于顺式-5-降冰片烯-内-2,3-二羧酸酐、联苯甲酸酐、双环[2,2,2]八-7-烯-2,3,5,6-四羧酸二酐、邻苯二甲酸酐、二苯甲酮-3,3'4,4'-四羧酸二酐、内-双环[2.2.2]八-5-烯-2,3-二羧酸酐、高邻苯二酸酐、反式-1,2-环己二羧酸酐和顺式-5-降冰片烯-外-2,3-二羧酸酐。
在一个实施方式中，助焊活性固化剂可具有100℃至300℃的熔点。具体地，助焊活性固化剂可具有120℃至250℃的熔点。在该范围内，助焊活性固化剂确保在高速搅拌过程中粘合剂组合物的液体稳定性。
助焊活性固化剂可不含羧酸。
在一个实施方式中，相对于粘合剂组合物的总量，助焊活性固化剂基于固含量可按0.1wt%至10wt%的量存在，优选1wt%至9wt%，更优选3wt%至8wt%。在该范围内，助焊活性固化剂与环氧树脂的反应性可充分地调节以在呈现助焊活性的同时允许方便的连接。此外，由于助焊活性固化剂提供了高流动性，可确保隆起之间优异的连接性。在一个实施方式中，当助焊活性固化剂的含量由c表示且环氧树脂的含量由b表示时，b:c可为约2.5:1至10:1，优选约3:1至8:1。在该范围内，助焊活性固化剂可提供优异的助焊活性和粘结力。
固化催化剂
固化催化剂可用来减少固化时间，以便环氧树脂在半导体装配过程中完全固化。固化催化剂的实例可包括三聚氰胺类、咪唑类和三苯基膦类催化剂。具体地，可使用咪唑类催化剂。
咪唑类催化剂的实例包括PN-23和PN-40（Ajinomoto Co.,Inc.），2P4MZ、2MA-OK、2MAOK-PW、2P4MHZ（Shikoku Kagaku Chemicals Corp.），以及TPP-K和TPP-MK（Hokko Chemical Industry Co.,Ltd.），该催化剂可单独使用或以它们的两种或更多种组合使用。
相对于的粘合剂组合物的总量，固化催化剂基于固含量可按约0.01wt%至5wt%的量存在，优选约0.05wt%至3wt%，更优选约0.1wt%至0.8wt%。在该范围内，固化催化剂可提供优异的耐热性，防止环氧树脂的快速反应，并确保优异的流动性和连接性。
填料
填料可包括金属，例如金粉、银粉、铜粉、镍，以及非金属成分，例如矾土、氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、二氧化硅、氮化硼、二氧化钛、玻璃、氧化铁和陶瓷等。具体地，可使用二氧化硅。
虽然填料可具有任何形状和任何尺寸，但是可使用具有约5nm至约20μm尺寸的球形二氧化硅和无定形二氧化硅。
相对于粘合剂组合物的总量，填料基于固含量可按约15wt%至40wt%的量存在，优选约20wt%至35wt%。在该范围内，填料可确保优异的流动性、膜形成和粘结力。
偶联剂
偶联剂起粘结促进剂的作用，在粘合剂组合物的制备中，通过诸如二氧化硅的无机材料和有机材料之间的化学接合增强粘结力。
作为偶联剂，通常可使用硅烷偶联剂，例如，含环氧基2-(3,4-环氧环己基)乙基三甲氧基硅烷、3-缩水甘油醚氧基三甲氧基硅烷、3-缩水甘油醚氧基丙基三乙氧基硅烷，含胺基N-2-(氨基乙基)-3-氨丙基甲基二甲氧基硅烷、N-2-(氨乙基)-3-氨丙基三甲氧基硅烷、N-2-(氨乙基)-3-氨丙基三乙氧基硅烷、3-氨丙基三甲氧基硅烷、3-氨丙基三乙氧基硅烷、3-三乙氧基甲硅烷基-N-(1,3-二甲基亚丁基)丙胺、N-苯基-3-氨丙基三甲氧基硅烷，含巯基的3-巯丙基甲基二甲氧基硅烷、3-巯丙基三乙氧基硅烷，以及含异氰酸酯基的3-异氰酸酯丙基三乙氧基硅烷，该偶联剂可单独使用或以它们的两种或更多种组合使用。
相对于粘合剂组合物在固态中的总量，偶联剂可按约0.1wt%至10wt%的量存在，优选约0.5wt%至5wt%，更优选约0.7wt%至3wt%。在该范围内，偶联剂可在减小气泡出现的同时提供优异的粘结可靠性。
有机溶剂
粘合剂组合物可进一步包含有机溶剂。有机溶剂可降低半导体装置用粘合剂组合物的粘度，并促进膜的形成。有机溶剂的实例可包括但不限于甲苯、二甲苯、丙二醇单甲醚乙酸酯、苯、丙酮、甲乙酮、四氢呋喃、二甲基甲酰胺和环己酮。
粘合剂组合物可在260℃具有约2×104泊至约15×104泊的熔体粘度。在该范围内，粘合剂组合物可使金属隆起顺利地接触焊料，从而促进电连接。具体地，组合物的熔体粘度可为约3×104泊至约10×104泊。
粘合剂组合物可具有接合后约10度至约80度的焊料与金属隆起的接触角。在该范围内，当焊料的氧化层去除时，粘合剂组合物提供了高的表面能，从而促进具有优异润湿性的金属隆起与焊料之间的电连接。
组合物可在金属隆起和焊料之间形成金属间化合物（IMC）层。这里，该层相对于接合后的接合面积具有约70%或更大的面积，优选约80%或更大，更优选约90%或更大，再更优选约95至100%。
在本发明的另一个方面，提供了一种用上述粘合剂组合物形成的半导体用粘合剂膜。粘合剂膜形成了在隆起芯片之间具有令人满意的电连接可靠性的粘合剂层，并使去除Cu隆起和焊料的氧化层的助焊过程成为可能。而且，在通过热压缩的芯片接合中，粘合剂膜可使隆起和焊料彼此完全粘结。此外，粘合剂膜可呈现优异的粘结力，并在隆起和焊料之间充足的区域上形成IMC金属间化合物层，而不会引起泡沫孔隙。
由以下实施例和对比例将更好地理解本发明。这些实施例仅为说明提供，并非意在限制由所附权利要求限定的发明范围。
本发明的实施方式
实施例
以下实施例和对比例中使用的组分如下：
（A）聚合物树脂
（a1）含环氧基的聚合物树脂（SG-P3TEA，Tg=15℃，固含量：15%，Nagase ChemteXCorp.）
（a2）含环氧基的聚合物树脂（KLS-1062DR，Tg=19℃，固含量：20%，FujikuraKasei Co.,Ltd.）
（B）环氧树脂
（b1）甲酚酚醛类环氧树脂（YDCN-500-10P，Kukdo Chemical Co.,Ltd.）
（b2）萘类环氧树脂（NC-3000H，Nippon Kayaku Co.,Ltd.）
（b3）双酚A型环氧树脂（YD-011，Kukdo Chemical Co.,Ltd.）
（C）助焊活性固化剂
（c1）二苯甲酮-3,3'4,4'-四羧酸二酐（Sigma-Aldrich，m.p.：220℃）
（c2）联苯甲酸酐（Sigma-Aldrich,m.p.:226℃)
（c3）顺式-5-降冰片烯-内-2,3-二羧酸酐（Sigma-Aldrich，m.p.：166℃）
（c4）邻苯二甲酸酐（Sigma-Aldrich，m.p.：130℃）
（c5）双环[2,2,2]八-7-烯-2,3,5,6-四羧酸二酐（Sigma-Aldrich，m.p.：300℃）
（c6）偏苯三酸酐（Sigma-Aldrich，m.p.：226℃）
（c7）柠檬酸（Sigma-Aldrich，m.p.：156℃）
（c8）亚氨基二乙酸（Sigma-Aldrich，m.p.：243℃）
（c9）乙二胺四乙酸（Sigma-Aldrich，m.p.：250℃）
（C'）非助焊活性固化剂：苯酚固化剂（HF-4M，Meiwa Plastic Industries）
（D）固化催化剂：咪唑类固化催化剂（2P4MHZ-PW，Shikoku Chemicals Corp.）
（E）填料：球形二氧化硅填料（silicfiller）（SC-2500SQ，Admatechs）
（F）硅烷偶联剂：环氧硅烷偶联剂（KBM-303，Shin-Etsu Chemical Co.,Ltd.）
（G）溶剂：甲乙酮（Samchun Chemical Co.,Ltd.）
表1
表2
Figure BDA00003348927300122
粘合剂膜的制备
将表1和表2中所列组分加入装配有高速搅拌器的1L圆柱形烧瓶中，在2000rpm缓慢分散10分钟，然后在5000rpm进一步快速分散30分钟，从而制备粘合剂膜用的组合物。接着，各组合物用50μm的囊式过滤器（capsule filter）过滤并用涂布器涂布至20μm的厚度，生产粘合剂膜。粘合剂膜在90℃干燥10分钟，进一步在110℃干燥5分钟，并在室温储存1天。
实施例1至5和对比例1至5中制备的粘合剂膜如下评估，结果示于表3。
（1）高速分散后的液体稳定性
在加入组分后，在2000rpm低速分散10分钟，在5000rpm高速分散30分钟，然后用50μm的囊式过滤器进行过滤，从而形成膜。这里，如果因高速分散生成热使组分快速反应或使稳定性降低，会发生凝胶化，则膜不易形成。作为高速分散后凝胶化程度确定的结果，由O表示没有凝胶化，Δ表示少量凝胶化，X表示全部凝胶化。
（2）在260℃的熔解粘度（×104（P））
为测量粘合剂膜的熔体粘度，各粘合剂膜在60℃堆叠成多层，并切成8mm直径的圆形样品。样品具有400μm至450μm的厚度。熔体粘度在以5℃/min的速率从30℃至300℃加热样品时测量。表3显示了260℃的eta值，该值在芯片彼此结合的260℃评估流动性。
（3）粘结力强度（kgf/芯片）
将以二氧化物膜涂布的725μm厚的晶圆切成具有5×5mm尺寸的芯片，然后在60℃以各粘合剂膜层压。然后，将层压板切割只留下接合部分。用以粘合剂膜层压并放在725μm厚的下芯片（10×10mm）上的上芯片（5×5mm），使重叠（overlying）的芯片在100℃然后在260℃经受1.0kgf的负荷10秒，在175℃固化2小时，并经历PCT条件（121°C/100%RH）8小时和IR回流三次。然后，在250℃测量上芯片的剪切强度。
（4）泡沫孔隙
将以二氧化物膜涂布的80μm厚的晶圆切成具有10×10mm尺寸的芯片，然后在60℃以各粘合剂膜层压。然后，将层压板切割只留下接合部分。将以粘合剂膜层压的晶圆芯片（10×10mm）放在具有725μm厚度和10×10mm尺寸的晶圆芯片上。使重叠（overlying）的芯片在100℃然后在260℃经受以10秒1.0kgf负荷的压缩。然后，用扫描超声断层法（SAT）评估出现泡沫孔隙。晶圆上泡沫孔隙没有出现由O表示，细微孔隙部分出现由Δ表示，孔隙严重出现由X表示。
（5）焊料/Cu隆起连接性
使用为评估焊料隆起和Cu隆起之间的连接性而制造的芯片，根据粘合剂组合物，评估隆起与隆起的连接性。优异的连接性由O表示，部分未连接由Δ表示，没有连接性由X表示。
（6）焊料/Cu之间IMC层的存在
如果由于焊料隆起和Cu隆起之间连接时的助焊活性去除了氧化层，则IMC层可形成（参考Journal of Alloys and Compounds，卷381（2004），151至157页）。为评估去除氧化层的能力，将粘合剂膜和焊球（Sn：96.8，Ag：3.0，Cu：0.2，760μm）放在Cu箔上，在260℃压缩和模制，并抛光侧面。然后，通过扫描电镜（SEM）观察Cu箔和焊球之间的IMC层。
存在IMC层由O表示，缺少IMC层由X表示。
(7)接触角
将粘合剂膜和焊球（Sn：96.8，Ag：3.0，Cu：0.2，760μm）放在Cu箔上，在260℃压缩和模制，并抛光侧面。然后通过SEM观察Cu箔和焊球之间的接触区域。这里，如果由于助焊活性去除了氧化层，则焊球在Cu箔表面上湿润，从而在接触区域能够测量接触角。所测接触角示于表3。
表3
Figure BDA00003348927300141
表3中，根据实施例1至5的粘合剂膜在所有的测量中都呈现出合适的性质。但是，在组合物含有暴露羧酸的偏苯三酸酐的对比例1中，由于膜形成用的组合物在高速搅拌时产生的热量和干燥时产生的热量，组合物中的酸可与环氧树脂反应。因此，粘合剂膜会由于快速固化反应而具有缺陷。此外，粘合剂膜在高速分散后不具有合适的液体稳定性，在干燥中部分固化而降低流动性，并且不利于芯片之间的连接和粘结。同样，在含有酸的对比例2至4中，不能确保液体稳定性。在含有苯酚固化剂而非助焊活性固化剂的对比例5中，由于焊料和Cu的氧化层没有去除，因此未形成IMC层，从而芯片之间不能合适地实现连接。
虽然本文已公开了一些实施方式，但应理解这些实施方式仅通过说明的方式提供，在不背离本发明精神和范围的前提下，可进行各种修改、变化和更改。因此，本发明的范围应仅由所附权利要求及其等效形式所限定。

Claims (15)

1.一种半导体装置用粘合剂组合物，包含至少一种由以下化学式1至3表示的助焊活性固化剂：
[化学式1]
其中，A表示含有酸酐部分并包含0至3个双键的C4至C8环结构；B表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R1选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为0至2的整数，
[化学式2]
Figure FDA00003348927200012
其中，C表示含有酸酐部分并包含0至3个双键的C4至C8环结构；D表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R2选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；且n为1至4的整数，
[化学式3]
Figure FDA00003348927200013
其中，E表示含有酸酐部分并包含0至3个双键的C4至C8环结构；F表示具有C4至C8环结构的脂环部分、不饱和脂环部分或芳香部分；R3选自由氢原子、C1至C6烷基、C6至C12芳基、C6至C12取代的芳基、乙烯基和烯丙基组成的组；R4选自由以下化学式（i）至（viii）表示的化合物；且n为1至4的整数，
Figure FDA00003348927200021
2.根据权利要求1所述的粘合剂组合物，其中，所述助焊活性固化剂相对于粘合剂组合物的总量以0.1wt%至10wt%的量存在。
3.根据权利要求1所述的粘合剂组合物，其中，所述助焊活性固化剂具有约100℃至约300℃的熔点。
4.根据权利要求1所述的粘合剂组合物，其中，所述组合物在260℃具有约2×104泊至约15×104泊的熔体粘度。
5.根据权利要求1所述的粘合剂组合物，其中，所述组合物具有接合后约10度至约80度的焊料与金属隆起的接触角。
6.根据权利要求1所述的粘合剂组合物，其中，所述组合物包含约0.1wt%至约5wt%的咪唑类固化催化剂。
7.根据权利要求1所述的粘合剂组合物，其中，所述组合物包含聚合物树脂、环氧树脂、至少一种由化学式1至3表示的助焊活性固化剂、填料和固化催化剂。
8.根据权利要求7所述的粘合剂组合物，其中，所述组合物基于固含量包含约20wt%至60wt%的所述聚合物树脂、约10wt%至60wt%的所述环氧树脂、约0.1wt%至10wt%的所述助焊活性固化剂、约0.01wt%至5wt%的所述固化催化剂和约15wt%至40wt%的所述填料。
9.根据权利要求8所述的粘合剂组合物，其中，所述聚合物树脂包含环氧基团并具有约﹣30℃至80℃的玻璃化转变温度。
10.根据权利要求8所述的粘合剂组合物，其中，所述组合物进一步包含约0.01wt%至10wt%的硅烷偶联剂。
11.一种半导体装置用粘合剂膜，包含权利要求1至10的任一项所述的粘合剂组合物。
12.如权利要求11所述的粘合剂膜，其中，所述粘合剂膜在金属隆起和焊料之间形成金属间化合物层，所述金属间化合物层在接合后具有相对于接合面积约70%或更大的面积。
13.如权利要求11所述的粘合剂膜，其中，所述粘合剂膜在Cu和焊料之间形成金属间化合物层，所述金属间化合物层在接合后具有相对于接合面积约70%或更大的面积。
14.一种将第一隆起的半导体芯片与第二隆起的半导体芯片彼此粘结的方法，使用由根据权利要求1至10的任一项所述的粘合剂组合物形成的粘合剂膜。
15.一种半导体封装，包括：
芯片安装基板；和
在所述芯片安装基板的一个表面上堆叠的第一半导体芯片和第二半导体芯片，使用根据权利要求11所述的粘合剂膜将所述第一半导体芯片和所述第二半导体芯片彼此粘结。
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