TW201224093A - Adhesive composition for semiconductor, adhesive film including the same, and semiconductor package using the same - Google Patents

Adhesive composition for semiconductor, adhesive film including the same, and semiconductor package using the same Download PDF

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Publication number
TW201224093A
TW201224093A TW100130318A TW100130318A TW201224093A TW 201224093 A TW201224093 A TW 201224093A TW 100130318 A TW100130318 A TW 100130318A TW 100130318 A TW100130318 A TW 100130318A TW 201224093 A TW201224093 A TW 201224093A
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TW
Taiwan
Prior art keywords
group
composition
weight
adhesive
adhesive composition
Prior art date
Application number
TW100130318A
Other languages
Chinese (zh)
Other versions
TWI452100B (en
Inventor
Ah-Ram Pyun
Dong-Seon Uh
Ki-Tae Song
Jae-Hyun Cho
In-Hwan Kim
Original Assignee
Cheil Ind Inc
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Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW201224093A publication Critical patent/TW201224093A/en
Application granted granted Critical
Publication of TWI452100B publication Critical patent/TWI452100B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

Disclosed herein are an adhesive composition for a semiconductor device having high flowability, an adhesive film comprising the same, and a semiconductor package using the same. The composition includes a flux active curing agent having a particular structure and has satisfactory reliability of electrical connection between bump chips. Further, the composition enables a flux process of eliminating an oxide layer of a Cu bump and a solder by an adhesive layer between the bump chips, and enables a bump and a solder to be thoroughly connected to each other in chip bonding by thermal compression.

Description

201224093 六、發明說明： 【發明所屬_^技領域j 發明領域 本發明係有關於用於半導體之一黏合劑組合物，及包 括其之一黏合薄膜。更特別地，本發明係有關於用於半導 體之一黏合劑組合物，及包括其之一黏合薄膜，此黏合劑 組合物包括酐之助熔劑活性固化劑，其展現助炫劑活性及 實施與環氧樹脂之固化反應，藉此不僅提供助熔劑功能及 一絕緣黏合層之固化控制，而且亦維持液體穩定性，而不 會造成由於安裝後之剩餘酸而造成之缺陷。 相關技藝之說明 為實現高容量之半導體元件，使用一定性方法，例如， 大型集成每單位面積之增加數量的晶胞(cell)，及一定量方 法，例如，封裝數個堆疊之晶片以增加容量。 作為封裝方法’一傳統之多晶片封裝件(Mcp)被普遍使 用，其中，數個晶片係使用黏合劑堆疊，且上下晶片係藉 由引線接合電連接。但是，因為總封裝件尺寸除用於堆疊 晶片之空間外之另外用於引線接合之空間而增加，因此， 存在不必要之空間。 為克服mcp之此專缺點，晶圓等級之堆疊封裝件(wsp) 已被引入。於WSP ’料孔(Tsv)於其間形成電路之一晶圓 上形成，且以導性材料填充而使各層直接電連接。 MCP及WSP係用以增加半導體元件容量之定量方法， 201224093 其中，數個晶片係藉由黏合劑黏結及堆疊。 因為最近之較小及大型集成電子設備之趨勢，於半導 體元件安裝使用最小面積之倒裝晶片吸引大量注意。凸塊 形成於用於倒裝晶片安裝之一半導體元件之一鋁電極上， 且與一電路板上之一引線電連接。凸塊一般係由焊料形 成，且焊料凸塊係形成於露出之鋁電極上，且經由沉積或 電鍍與一晶片之一内部引線連接。此外，使用形成於一引 線連接元件上之金柱狀λ塊。 當經由倒裝晶片連接之一半導體元件實際上被使用 時，因為一連接部之一電極曝置於空氣且晶片與板間之線 性膨脹係數之差異大，大量應力係藉由來自其後之諸如焊 料回流之方法的熱施加至凸塊之連接部，因此，於安裝時 造成可靠度問題。為解決此問題及改良凸塊與板連接後之 連接部的可靠度，半導體元件與板間之間隙係以樹脂糊料 或黏合薄膜填充及固化，藉此，將半導體元件與板固定。 此處，一傳統之助溶劑活化劑，例如，有機酸，被使用以 消除焊料上之氧化物層及易於金屬連接。但是，當助熔劑 活化劑餘留時，會產生氣泡，例如，孔隙，引線會由於酸 元素而腐蝕且連接可靠度會降低。因此，需要用於清理剩 餘助熔劑活化劑之助熔劑處理方法。但是，當半導體晶片 與板間之間隙窄時，係難以清理剩餘之助熔劑活化劑。因 此，需要發展不包括另外之助熔劑處理方法之一絕緣黏合 層0 為發展不包括另外之助熔劑處理方法之一絕緣黏合 201224093 層諸如竣g复及癸二酸之酸係直接用於傳統方法。但是， 直接此等酸會造絲緣黏合狀Μ敎性及相形狀於 室溫之穩定性減低。再者，絕緣黏合層之固化由於酸而未 被適當控制。此外，於安裝於產品上後，剩餘之酸會造成 諸如凸塊腐敍及鐵遷移之缺陷。 t:發明内容;j 發明概要 本發明之一方面係提供用於半導體元件之一黏合劑組 合物’及包括其之-合賴’此黏合劑組合物不僅提供 助熔劑功能及絕緣黏合層之固化控制，而且亦維持液體穩 定性，而於安裝後不會造成由於剩餘酸而產生之缺陷。 本發明之另一方面係提供用於半導體元件之一黏合劑 組合物’及包括其之-黏合薄膜’此黏合劑組合物不會造 成由於助熔劑反應性固化劑與環氧化物反應而產生之固化 劑活性減低及諸如剩餘未反應之固化劑於高溫分解之伴隨 缺陷。 本發明之另一方面係提供用於半導體元件之一黏合劑 組合物，及包括其之一黏合薄膜，此黏合劑級合物可穩定 地施加至於250。<：或更多時之用於晶粒結合之矽穿孔ν) 封裝。 本發明之另一方面係提供用於半導體元件之一黏合劑 組合物，及包括其之一黏合薄膜，此黏合劑纟且合物具有凸 塊晶片間電連接之優異可靠度。 本發明之另一方面係提供具有高流動性之用於半導體 201224093 之一點合劑組合物，及包括其之―黏合_，此黏合劑組 合物提供去除金屬凸塊及焊料之氧化物層之一助熔劑處理 方法，且能藉由熱壓縮使凸塊及焊料於晶片結合時彼此完 全連接。 本發明之另一方面係提供使用如上之點合薄膜之一半 導體封裝件。 本發明之一方面提供用於半導體元件之一黏合劑組合 物。此黏合劑組合物包括以化學式1至3表示之助熔劑活性 固化劑之至少一者： [化學式1]201224093 VI. Description of the Invention: [Technical Field] The present invention relates to a binder composition for a semiconductor, and an adhesive film comprising the same. More particularly, the present invention relates to a binder composition for use in a semiconductor, and an adhesive film comprising the same, the binder composition comprising an anhydride flux curing agent which exhibits the activity and implementation of the builder The curing reaction of the epoxy resin not only provides the flux function and the curing control of an insulating adhesive layer, but also maintains liquid stability without causing defects due to residual acid after installation. Description of the Related Art To achieve high-capacity semiconductor components, a certain method is used, for example, a large integration of an increased number of cells per unit area, and a certain amount of methods, for example, packaging a plurality of stacked wafers to increase capacity . As a packaging method, a conventional multi-chip package (Mcp) is commonly used in which a plurality of wafers are stacked using an adhesive, and upper and lower wafers are electrically connected by wire bonding. However, since the total package size is increased in addition to the space for wire bonding other than the space for stacking the wafers, there is an unnecessary space. To overcome this special drawback of mcp, wafer level stacked packages (wsp) have been introduced. The WSP' hole (Tsv) is formed on one of the wafers on which the circuit is formed, and is filled with a conductive material to directly electrically connect the layers. MCP and WSP are quantitative methods for increasing the capacity of semiconductor components. 201224093 Among them, several wafers are bonded and stacked by a binder. Because of the recent trend toward smaller and larger integrated electronic devices, the use of flip-chip wafers with a minimum area for semiconductor component mounting has attracted a lot of attention. The bump is formed on one of the aluminum electrodes of one of the semiconductor elements for flip chip mounting and is electrically connected to one of the leads on a circuit board. The bumps are typically formed of solder and the solder bumps are formed on the exposed aluminum electrodes and are connected to one of the inner leads of a wafer via deposition or plating. Further, a gold columnar λ block formed on a lead connecting member is used. When a semiconductor element is actually used via flip chip bonding, since one of the electrodes of one of the connections is exposed to air and the difference in linear expansion coefficient between the wafer and the board is large, a large amount of stress is caused by The heat of the method of solder reflow is applied to the joint of the bumps, thus causing reliability problems during mounting. In order to solve this problem and improve the reliability of the connection portion after the bump is connected to the board, the gap between the semiconductor element and the board is filled and cured with a resin paste or an adhesive film, whereby the semiconductor element and the board are fixed. Here, a conventional cosolvent activator, such as an organic acid, is used to eliminate the oxide layer on the solder and to facilitate metal bonding. However, when the flux activator remains, bubbles are generated, for example, voids, the leads are corroded by acid elements and the connection reliability is lowered. Therefore, a flux treatment method for cleaning up the remaining flux activator is required. However, when the gap between the semiconductor wafer and the board is narrow, it is difficult to clean the remaining flux activator. Therefore, there is a need to develop an insulating adhesive layer that does not include an additional flux treatment method. For the development of an insulating resin that does not include another flux treatment method, the insulation system 201224093 layer, such as 竣g complex and azelaic acid, is directly used in traditional methods. . However, direct such acidity will result in a decrease in the stability of the edge of the filament and the stability of the phase shape at room temperature. Further, the curing of the insulating adhesive layer is not properly controlled due to the acid. In addition, after installation on the product, the remaining acid causes defects such as bump rust and iron migration. t: SUMMARY OF THE INVENTION 1. SUMMARY OF THE INVENTION One aspect of the present invention provides a binder composition for a semiconductor component and a composite of the same, which not only provides flux function but also cures the insulating adhesive layer. Control, and also maintain liquid stability, and will not cause defects due to residual acid after installation. Another aspect of the present invention provides a binder composition for a semiconductor element and an adhesive film comprising the same, which does not cause a reaction between a flux reactive curing agent and an epoxide. The curing agent activity is reduced and the accompanying defects such as residual unreacted curing agent at high temperature decomposition. Another aspect of the present invention provides a binder composition for a semiconductor element, and an adhesive film comprising the same, which can be stably applied to 250. <: or more when used for grain bonding, 矽perivation ν) encapsulation. Another aspect of the present invention provides a binder composition for a semiconductor component, and an adhesive film comprising the same, which has excellent reliability in electrical connection between bump wafers. Another aspect of the present invention provides a dot composition for semiconductor 201224093 having high fluidity, and a bond thereof comprising the same, the binder composition providing a flux for removing metal bumps and solder oxide layers The processing method and the bump and the solder can be completely connected to each other when bonded to the wafer by thermal compression. Another aspect of the invention provides a semiconductor package using one of the punctiform films described above. One aspect of the invention provides a binder composition for a semiconductor component. The adhesive composition includes at least one of the flux active curing agents represented by Chemical Formulas 1 to 3: [Chemical Formula 1]

其中，A表示含有一酸酐部份及包括〇至3個雙鍵之一 C4至C8之環結構；B表示具有一C4至C8之環結構之一脂環 族、不飽和之脂環族或芳香族之部份；R1係選自由一氫原 子、C1至C6烷基基團、C6至C12芳基基團、（：6至(：12之經 取代之芳基基團、乙烯基基團’及烯丙基基團所構成之族 群；且η係0至2之整數， [化學式2] 201224093 Γ4$Γ 酉夂軒部份且包括Ο至3個雙鍵之一Wherein A represents an aromatic anhydride moiety and a ring structure comprising one to three double bonds C4 to C8; and B represents an alicyclic, unsaturated alicyclic or aromatic having a C4 to C8 ring structure. a portion of the family; R1 is selected from a hydrogen atom, a C1 to C6 alkyl group, a C6 to C12 aryl group, (6: to 12: substituted aryl group, vinyl group' And a group consisting of allyl groups; and η is an integer of 0 to 2, [Chemical Formula 2] 201224093 Γ4$Γ 酉夂 部份 part and includes Ο to one of 3 double bonds

C4至C8之環結構；D T不具有一c 4至C 8之環結構之一脂環 lei 族_族部㈣2係選自由一氫原子、 之1團C6至C12芳基基團 :至C12二經取代 土土目L烯基基團’及稀丙基基團所構成之族群； 且η係1至4之整數， [化學式3]a ring structure of C4 to C8; DT does not have a ring structure of c 4 to C 8 alicyclic lei group _ group part (four) 2 series selected from a hydrogen atom, a group of C6 to C12 aryl groups: to C12 two a group consisting of a substituted L-alkenyl group and a propyl group; and an integer of 1 to 4, [Chemical Formula 3]

η 八中Ε表示含有—酸酐部份且包括〇至3個雙鍵之一C4 至C8之環結構；F表示具有_CuC8之環結構之一脂環 族、不飽和脂减或芳香族部份；r3係選自由—氫原子、 C6至C12之經取代 C1至C6烷基基團、C6sC12芳基基團、 之*芳基基BI、乙縣基團，輯丙基基團所構成之族群； R係選自以下列化學式⑴至(viii)表示之化合物；且^係】至4 之整數， CH3 CH2 — 一 CH ~~ I 1 一C 一 1 (ϊ) ίϋ) (ίϋ) CH3 I •C- I CH3 ㈣η 八中Ε denotes a ring structure containing an anhydride moiety and including one to three double bonds C4 to C8; F represents an alicyclic group, an unsaturated lipid minus or an aromatic moiety having a ring structure of _CuC8 ;r3 is selected from the group consisting of a hydrogen atom, a C1 to C6 alkyl group substituted by C6 to C12, a C6sC12 aryl group, an *aryl group BI, a B group, and a propyl group. R is selected from the group consisting of the compounds represented by the following chemical formulas (1) to (viii); and ^) to an integer of 4, CH3 CH2 - a CH ~~ I 1 - C - 1 (ϊ) ίϋ) (ίϋ) CH3 I • C- I CH3 (4)

7 201224093 於一實施例，相關於黏合劑組合物之總量，助炫劑活 性固化劑可以0.1至10重量％(wt%)之量存在。 助熔劑活性固化劑可具有約100至約300°C之熔點。 組合物可具有於260°C為約2xl04至約15xl04泊之熔融 黏度。 此組合物於結合後可具有約10至約8 0度之焊料與金屬 凸塊之接觸角。 組合物可於金屬凸塊與焊料間形成一金屬間化合物 層，使得於結合後，相關於結合面積，此金屬間化合物層 具有約70%或更多之面積。 組合物可包括約0.1至約5重量％之以咪唑為主之固化 催化劑。 於一實施例，組合物可包括一聚合物樹脂、一環氧樹 脂、以化學式1至3之助熔劑活性固化劑之至少一者、填料， 及一固化劑。 特別地，以固體含量為基準，組合物可包括約20至60 重量％之聚合物樹脂、約10至60重量％之環氧樹脂、約0.1 至10重量％之助熔劑活性固化劑、約0.01至5重量％之固化 催化劑，及約15至40重量％之填料。 聚合物樹脂可包括一環氧基團且具有約-30至80°C之 玻璃轉移溫度。 於一實施例，組合物可進一步包括約0.01至10重量％之 一碎烧偶合劑。 本發明之另一方面提供用於半導體之一黏合薄膜，其 201224093 包括上述之黏合劑組合物。 本發明之另一方面提供使用用於半導體元件之黏合薄 膜黏著之一半導體封裝件。半導體封裝件包括一晶片安裝 基材，及堆疊於晶片安裝基材之一表面上之第一及第二半 導體晶片。此處，第一及第二半導體晶片係藉由所述黏合 薄膜彼此黏著。 c實施方式3 發明之詳細說明 除非其它定義，此處所述之含量係以固體含量為基 準。再者，丙烯酸系樹脂係集體地包括丙烯酸酯樹脂及甲 基丙烯酸酯樹脂。 於一實施例，一黏合劑組合物包括一聚合物樹脂、一 環氧樹脂、以化學式1至3表示之助熔劑活性固化劑之至少 一者、填料，及一固化催化劑。 特別地，以固體含量為基準，組合物可包括約20至60 重量％之聚合物樹脂，約10至60重量％之環氧樹脂，約0.1 至10重量％之助熔劑活性固化劑，約0.01至5重量％之固化 催化劑，及約15至40重量％之填料。 聚合物樹脂 聚合物樹脂之例子不受限地包括聚醯亞胺樹脂、聚苯 乙烯樹脂、聚乙烯樹脂、聚酯樹脂、聚醯胺樹脂、丁二烯 橡膠、丙烯酸橡膠、（曱基）丙烯酸樹脂、胺曱酸酯樹脂、聚 二苯醚樹脂、聚醚亞胺樹脂、苯氧樹脂、聚碳酸酯樹脂、 經改質之聚二苯醚樹脂，及其等之混合物。聚合物樹脂較 201224093 佳地可包括-環氧基團。於—實施例，可使用含環氧基團 之（甲基）丙烯酸共聚物。 聚合物樹脂可具有約-30至8〇〇c，較佳係約〇至6〇。(：， 且更佳係約5至35。(：之玻填轉移溫度。於此範圍内，可確保 高流動性讀錢異之孔料除效率，且亦可確保黏著性 及可靠度。 於一實施例，聚合物樹脂具有5〇 〇〇〇至5 〇〇〇,〇〇〇克/莫 耳之重量平均分子量。 以固體含量為基準，相關於黏合劑組合物之總量，聚 合物樹脂可以約20至60重量％(wt%)，較佳係25至5〇重量 % ’且更佳係25至45重量％之量存在。 環氧樹脂 環氧樹脂適於實施固化及黏著功能，且可為液體環氧 樹脂、固體環氧樹脂，或其等之混合物。 液體環氧樹脂之例子不受限地可包括雙酚A型液體環 氧樹脂、雙酚F型液體環氧樹脂、大於二官能基之多官能基 液體環氧樹脂、經橡膠改質之液體環氧樹脂、經胺曱酸酯 改質之液體環氧樹脂、經丙烯酸改質之液體環氧樹脂，及 光敏性液體環氧樹脂《此等環氧樹脂可單獨或以其等之混 合物使用。特別地，可使用雙酚A型液體環氧樹脂。 液體環氧樹脂(bl)可具有約100至約1500 g/eq，較佳係 約150至約800 g/eq，且更佳係約150至400 g/eq之環氧當 量。於此範圍内，固化產物可展現優異黏著性，維持玻璃 轉移溫度，及具有較佳财熱性。 201224093 再者’液體環氧樹脂可具有約100至1，〇〇〇克/莫耳之重 量平岣分子量。於此範圍内’樹脂展現優異流動性。 作為固體環氧樹脂，可使用於室溫呈固態或接近固體 之狀態且具有至少一個官能基團之環氧樹脂。特別地，可 使用具有約30至1〇〇〇C之軟化點（SP)之環氧樹脂。例如，固 體環氧樹脂可包括以雙酚為主之環氧樹脂、以酚酚醛清漆 為主之環氧樹脂、以鄰-甲酚酚醛清漆為主之環氧樹脂、多 官能基環氧樹脂、以胺為主之環氧樹脂、含雜環狀環之環 氧樹脂、經取代之環氧樹脂、萘酚環氧樹脂，及其等之混 合物。 固體環氧樹脂之可購得產品包括下列。以雙酚為主之 環氧樹脂之例子包括YD-017H、YD-020、YD020-L、 YD-014、YD-014ER、YD-013K、YD-019K、YD-019、 YD-017R、YD-017、YD-012、YD-011H、YD-01 IS、YD-01 卜 YDF-2004，及YDF-2001(Kukdo Chemical Co” Ltd)。以酌· 酚醛清漆為主之環氧樹脂之例子包括ΕΡΙΚΟΤΕΤΜ 152及 EPIKOTE™ 154(Yuka-Shell Epoxy Co” Ltd.)、 EPPN-201 (Nippon Kayaku Co., Ltd.) ' D.E.N.™ 438(Dow Chemical Co.)，及 YDPN-64卜 YDPN-638A80、YDPN-638、 YDPN-637、YDPN-644及 YDPN-631(Kukdo Chemical Co.， Ltd)。以鄰-甲酚酚醛清漆為主之環氧樹脂之例子包括 YDCN-500-1P 、 YDCN-500-2P 、 YDCN-500-4P 、 YDCN-500-5P 、 YDCN-500-7P 、 YDCN-500-8P 、 YDCN-500-10P、YDCN-500-80P、YDCN-500-80PCA60、 11 201224093 YDCN-500-80PBC60 、 YDCN-500-90P ， 及 YDCN-500-90PA75(Kukdo Chemical Co., Ltd.)、 EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、 EOCN-1025 及 EOCN-1027(Nippon Kayaku Co., Ltd.) ' YDCN-701、YDCN-702、YDCN-703 及 YDCN-704(Tohto Kasei Co.，Ltd.)’ 及EPICLON® N-665-EXP(Dainippon Ink & Chemicals, Inc.)。以雙盼為主之盼酿清漆環氧樹脂之例子包 括 KBPN-110、KBPN-120，及KBPN-115(Kukdo Chemical Co·， Ltd)。多官能基環氧樹脂之例子包括EPON™ 103lS(Yuka-Shell Epoxy Co·, Ltd.)、Araldite® 0163(Ciba Specialty Chemicals)、Dentacol® EX-611、Dentacol® EX-614、Dentacol® EX-614B、Dentacol® EX-622、 Dentacol® EX-512、Dentacol® EX-521、Dentacol® EX-421、Dentacol® EX-411 及 Dentacol® EX-321(Nagase ChemteX Corp.)，及 EP-5200R、KD-1012、EP-5100R、 KD-10U、KDT-4400A70、KDT-4400、YH-434L、YH-434 及YH-300(Kukdo Chemical Co.，Ltd·)。以胺為主之環氧樹脂 之例子包括EPIKOTE™ 604(Yuka-Shell Epoxy Co.，Ltd.)、 YH-434(Tohto Kasei Co.，Ltd.)、TETRAD® X及TETRAD® C(Mitsubishi Gas Chemical Co., Inc.)， 及 ELM-120(Sumitomo Chemical Co., Ltd)。含雜環狀環之環氧 樹脂之例子係 Araldite® PT-810(Ciba Specialty Chemicals)。經取代之環氧樹脂之例子包括ERL-4234、 ERL-4299、· ERL-422卜及ERL-4206(Union Carbide Corp)。 12 201224093 以萘酚為主之環氧樹脂之例子包括EPICLON® HP-4032、 EPICLON® HP-4032D、EPICLON® HP-4700，及 EPICLON®47〇l(Dainippon Ink & Chemicals, Inc.)。此等環 氧樹脂可單獨或以其二或更多者之組合使用。 相關於呈固態之黏合劑組合物之總量，環氧樹脂可以 約10至60重量％，較佳係約2〇至50重量％，且更佳係約25 至45重量％之量存在。於此範圍内’環氧樹脂可確保優異 可罪度及黏合劑組合物之機械性質。特別地，環氧樹脂之 含量以“b”表示且聚合物樹脂之量以“a”（固體含量）表示 時，a<b。於此情況，可獲得優異可靠度。 助炫劑活性固化劑 黏合劑組合物包括以化學式1至3表示之助熔劑活性固 化劑之至少一者： [化學式1]7 201224093 In one embodiment, the antifoaming active curing agent may be present in an amount from 0.1 to 10% by weight (wt%), based on the total amount of the binder composition. The flux active curing agent can have a melting point of from about 100 to about 300 °C. The composition may have a melt viscosity of from about 2 x 10 4 to about 15 x 104 poise at 260 °C. The composition may have a contact angle of solder to metal bumps of from about 10 to about 80 degrees after bonding. The composition may form an intermetallic compound layer between the metal bumps and the solder such that after bonding, the intermetallic compound layer has an area of about 70% or more with respect to the bonding area. The composition may comprise from about 0.1 to about 5% by weight of an imidazole-based curing catalyst. In one embodiment, the composition may comprise a polymer resin, an epoxy resin, at least one of the flux active curing agents of Chemical Formulas 1 to 3, a filler, and a curing agent. In particular, the composition may comprise from about 20 to 60% by weight of polymer resin, from about 10 to 60% by weight of epoxy resin, from about 0.1 to 10% by weight of flux active curing agent, of about 0.01, based on solids content. Up to 5% by weight of the curing catalyst, and about 15 to 40% by weight of the filler. The polymer resin may include an epoxy group and have a glass transition temperature of about -30 to 80 °C. In one embodiment, the composition may further comprise from about 0.01 to 10% by weight of a breaker coupling agent. Another aspect of the present invention provides an adhesive film for a semiconductor, which 201224093 includes the above-described adhesive composition. Another aspect of the present invention provides a semiconductor package using an adhesive film for a semiconductor element. The semiconductor package includes a wafer mounting substrate and first and second semiconductor wafers stacked on a surface of one of the wafer mounting substrates. Here, the first and second semiconductor wafers are adhered to each other by the adhesive film. c. Embodiment 3 Detailed Description of the Invention Unless otherwise defined, the amounts described herein are based on the solids content. Further, the acrylic resin collectively includes an acrylate resin and a methacrylate resin. In one embodiment, a binder composition comprises a polymer resin, an epoxy resin, at least one of the flux active curing agents represented by Chemical Formulas 1 to 3, a filler, and a curing catalyst. In particular, the composition may comprise from about 20 to 60% by weight of the polymer resin, from about 10 to 60% by weight of the epoxy resin, from about 0.1 to 10% by weight of the flux active curing agent, based on the solids content, of about 0.01% Up to 5% by weight of the curing catalyst, and about 15 to 40% by weight of the filler. Examples of the polymer resin polymer resin include, without limitation, a polyimide resin, a polystyrene resin, a polyethylene resin, a polyester resin, a polyamide resin, a butadiene rubber, an acrylic rubber, or a (meth)acrylic acid. A resin, an amine phthalate resin, a polydiphenyl ether resin, a polyether imine resin, a phenoxy resin, a polycarbonate resin, a modified polydiphenyl ether resin, and the like. The polymer resin may preferably include an epoxy group as compared with 201224093. In the examples, an epoxy group-containing (meth)acrylic copolymer can be used. The polymer resin may have a -30 to 8 〇〇c, preferably about 〇 to 6 〇. (:, and better about 5 to 35. (: The glass is filled with transfer temperature. In this range, it can ensure high fluidity and cost difference, and also ensure adhesion and reliability. In one embodiment, the polymer resin has a weight average molecular weight of 5 Å to 5 Å, gram/mole. Based on the solid content, the total amount of the binder composition, the polymer resin It may be present in an amount of from about 20 to 60% by weight, preferably from 25 to 5% by weight 'and more preferably from 25 to 45% by weight. Epoxy epoxy resin is suitable for curing and adhesion functions, and It may be a liquid epoxy resin, a solid epoxy resin, or a mixture thereof, etc. Examples of the liquid epoxy resin may include, without limitation, a bisphenol A type liquid epoxy resin, a bisphenol F type liquid epoxy resin, or more than two. Functional group polyfunctional liquid epoxy resin, rubber modified liquid epoxy resin, amine phthalate modified liquid epoxy resin, acrylic modified liquid epoxy resin, and photosensitive liquid epoxy Resin "These epoxy resins can be used alone or in mixtures of them. In particular, a bisphenol A type liquid epoxy resin can be used. The liquid epoxy resin (bl) can have from about 100 to about 1500 g/eq, preferably from about 150 to about 800 g/eq, and more preferably from about 150. To an epoxy equivalent of 400 g/eq. Within this range, the cured product exhibits excellent adhesion, maintains glass transition temperature, and has better heat buildup. 201224093 Furthermore, 'liquid epoxy resin can have about 100 to 1, The weight of the gram/mole is a flat molecular weight. In this range, the resin exhibits excellent fluidity. As a solid epoxy resin, it can be used in a solid or near solid state at room temperature and has at least one functional group. Epoxy resin. In particular, an epoxy resin having a softening point (SP) of about 30 to 1 〇〇〇 C can be used. For example, a solid epoxy resin may include an epoxy resin based on bisphenol, and a phenolic phenolic aldehyde. Varnish-based epoxy resin, epoxy resin based on o-cresol novolac, polyfunctional epoxy resin, amine-based epoxy resin, epoxy resin containing heterocyclic ring, substituted Epoxy resin, naphthol epoxy resin, and mixtures thereof. Commercially available products of solid epoxy resins include the following. Examples of epoxy resins based on bisphenol include YD-017H, YD-020, YD020-L, YD-014, YD-014ER, YD-013K, YD- 019K, YD-019, YD-017R, YD-017, YD-012, YD-011H, YD-01 IS, YD-01, YDF-2004, and YDF-2001 (Kukdo Chemical Co" Ltd. Examples of the epoxy resin-based epoxy resin include ΕΡΙΚΟΤΕΤΜ 152 and EPIKOTETM 154 (Yuka-Shell Epoxy Co. Ltd.), EPPN-201 (Nippon Kayaku Co., Ltd.) 'DENTM 438 (Dow Chemical Co.) And YDPN-64, YDPN-638A80, YDPN-638, YDPN-637, YDPN-644 and YDPN-631 (Kukdo Chemical Co., Ltd). Examples of epoxy resins based on o-cresol novolac include YDCN-500-1P, YDCN-500-2P, YDCN-500-4P, YDCN-500-5P, YDCN-500-7P, YDCN-500- 8P, YDCN-500-10P, YDCN-500-80P, YDCN-500-80PCA60, 11 201224093 YDCN-500-80PBC60, YDCN-500-90P, and YDCN-500-90PA75 (Kukdo Chemical Co., Ltd.), EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025 and EOCN-1027 (Nippon Kayaku Co., Ltd.) ' YDCN-701, YDCN-702, YDCN-703 and YDCN-704 (Tohto Kasei Co., Ltd.)' and EPICLON® N-665-EXP (Dainippon Ink & Chemicals, Inc.). Examples of the varnish epoxy resin based on the double expectation include KBPN-110, KBPN-120, and KBPN-115 (Kukdo Chemical Co., Ltd.). Examples of the polyfunctional epoxy resin include EPONTM 103lS (Yuka-Shell Epoxy Co., Ltd.), Araldite® 0163 (Ciba Specialty Chemicals), Dentacol® EX-611, Dentacol® EX-614, and Dentacol® EX-614B. , Dentacol® EX-622, Dentacol® EX-512, Dentacol® EX-521, Dentacol® EX-421, Dentacol® EX-411 and Dentacol® EX-321 (Nagase ChemteX Corp.), and EP-5200R, KD- 1012, EP-5100R, KD-10U, KDT-4400A70, KDT-4400, YH-434L, YH-434, and YH-300 (Kukdo Chemical Co., Ltd.). Examples of the amine-based epoxy resin include EPIKOTETM 604 (Yuka-Shell Epoxy Co., Ltd.), YH-434 (Tohto Kasei Co., Ltd.), TETRAD® X, and TETRAD® C (Mitsubishi Gas Chemical). Co., Inc., and ELM-120 (Sumitomo Chemical Co., Ltd). An example of an epoxy resin containing a heterocyclic ring is Araldite® PT-810 (Ciba Specialty Chemicals). Examples of substituted epoxy resins include ERL-4234, ERL-4299, ERL-422, and ERL-4206 (Union Carbide Corp). 12 201224093 Examples of naphthol-based epoxy resins include EPICLON® HP-4032, EPICLON® HP-4032D, EPICLON® HP-4700, and EPICLON® 47〇l (Dainippon Ink & Chemicals, Inc.). These epoxy resins may be used singly or in combination of two or more thereof. The epoxy resin may be present in an amount of from about 10 to 60% by weight, preferably from about 2% to about 50% by weight, and more preferably from about 25% to about 45% by weight, based on the total of the solid binder composition. Within this range, epoxy resins ensure excellent sin and mechanical properties of the adhesive composition. Specifically, when the content of the epoxy resin is represented by "b" and the amount of the polymer resin is represented by "a" (solid content), a < b. In this case, excellent reliability can be obtained. The lubricant active curing agent The binder composition includes at least one of the flux active curing agents represented by Chemical Formulas 1 to 3: [Chemical Formula 1]

其中，A表示含有一酸酐部份及包括〇至3個雙鍵之一 C4至C8之環結構；B表示具有一C4至C8之環結構之一脂環 族、不飽和之脂環族或芳香族之部份；Ri係選自由一氫原 子、C1至C6烷基基團、C6至C12芳基基團、C6至C12之經 取代之芳基基團、乙烯基基團，及烯丙基基團所構成之族 群；且η係0至2之整數； 13 201224093 [化學式2]Wherein A represents an aromatic anhydride moiety and a ring structure comprising one to three double bonds C4 to C8; and B represents an alicyclic, unsaturated alicyclic or aromatic having a C4 to C8 ring structure. a member of the family; Ri is selected from the group consisting of a hydrogen atom, a C1 to C6 alkyl group, a C6 to C12 aryl group, a C6 to C12 substituted aryl group, a vinyl group, and an allyl group. a group consisting of groups; and η is an integer from 0 to 2; 13 201224093 [Chemical Formula 2]

其中，C表示含有一酸酐部份且包括〇至3個雙鍵之-C4K8之環結構；D表示具有_c4⑽之環結構之一脂環 族、不飽和之脂環族或芳香族部份;r2係選自由一氫原子、 〇至C6絲基團、C6至⑴芳基基團、c6至⑴之經取代 之方基基團、乙稀基基團，及稀丙基基團所構成之族群； 且η係1至4之整數；及 [化學式3]Wherein C represents a ring structure of -C4K8 containing an anhydride moiety and comprising up to 3 double bonds; and D represents an alicyclic, unsaturated alicyclic or aromatic moiety having a ring structure of _c4(10); R2 is selected from the group consisting of a hydrogen atom, a hydrazine to a C6 silk group, a C6 to (1) aryl group, a substituted aryl group of c6 to (1), an ethyl group, and a propyl group. Ethnic group; and η is an integer from 1 to 4; and [Chemical Formula 3]

其中’Ε表示含有一酸酐部份且包括0至3個雙鍵之一C4 至C8之環結構；F表示具有一C4至C8之環結構之一脂環 族、不飽和脂環族或芳香族部份；R3係選自由一氫原子、 C1至C6烷基基團、C6至C12芳基基團、C6至C12之經取代 之芳基基團 '乙稀基基團，及浠丙基基團所構成之族群； R4係選自以下列化學式⑴至(viii)表示之化合物；且η係1至4 之整數。 201224093Wherein 'Ε denotes a ring structure containing one anhydride moiety and including one of 0 to 3 double bonds C4 to C8; F represents an alicyclic group, an unsaturated alicyclic group or an aromatic having a ring structure of C4 to C8 a moiety; R3 is selected from the group consisting of a hydrogen atom, a C1 to C6 alkyl group, a C6 to C12 aryl group, a C6 to C12 substituted aryl group 'ethylene group, and a propyl group. a group consisting of a group; R4 is selected from the compounds represented by the following chemical formulas (1) to (viii); and η is an integer of 1 to 4. 201224093

CH3 I CH3 1 CH3 (ϊν)CH3 I CH3 1 CH3 (ϊν)

T I (ΐ ) <π> (m) {ν) (νί y {ν»ϊ 助熔劑活性固化劑之例子可不受限地包括順-5 -降冰片 烯-内型-2,3-二羧酸酐、聯苯甲酸酐、二環[2,2,2]辛-7-烯 -2,3,5,6-四羧酸二酐、酞酸酐、二苯基酮-3,3'4,4'-四羧酸二 酐、内型-二環[2.2.2]辛-5-烯-2,3-二羧酸酐、升酞酸酐、反 -1,2-環己二羧酸酐，及順-5-降冰片烯-外型-2,3-二羧酸酐。 於一實施例，助熔劑活性固化劑可具有100至300°C之 熔點。特別地，助熔劑活性固化劑可具有120至250°C之熔 點。於此範圍内，助炫劑活性固化劑確保黏合劑組合物於 高速攪拌期間之液體穩定性。 助熔劑活性固化劑可不含有羧酸。 於一實施例，以固體含量為基準，相關於黏合劑組合 物之總量，助溶劑活性固化劑可以0.1至10重量％，較佳係1 至9重量％，且更佳係3至8重量％之量存在。於此範圍内， 助熔劑活性固化劑與環氧樹脂之反應性可充份調整以容許 輕易連接，同時展現助炫劑活性。再者，因為助炫劑活性 固化劑提供高流動性，可確保凸塊間之優異連接性。於一 實施例，當助溶劑活性固化劑之含量以c表示且環氧樹脂之 含量以b表示，b : c可為約2.5 : 1至10 : 1，較佳係約3 : 1至8 : 1。於此範圍内，助炫劑活性固化劑可提供優異助炫劑活性 15 201224093 及黏著性。 固化催化劑 固化催化劑可用以降低固化時間，使得環氧樹脂於半 導體組合處理方法期間完全固化。固化催化劑之例子可包 括以三聚氰胺為主、以咪唑為主，及以三苯基膦為主之催 化劑。特別地，可使用以咪唑為主之催化劑。 以咪唑為主之催化劑之例子包括PN-23及 PN-40(Ajinomoto Co., Inc.)'2P4MZ>2MA-OK'2MAOK-PW 及 2P4 MHZ(Shikoku Chemicals Corp_)，與 TPP-K 及 TPP-MK(Hokko Chemical Industry Co.，Ltd.)’ 其等可單獨或 以其專之·一或更多者之組合而使用。 以固體含量為基準，相關於黏合劑組合物之總量，固 化催化劑可以約0.01至5重量％，較佳係約〇·〇5至3重量％， 且更佳係約0.1至0.8重量％之量存在。於此範圍内，固化催 化劑可提供優異耐熱性，避免環氧樹脂快速反應，及確保 優異流動性及連接性。 填料 填料可包括金屬，例如，金粉、銀粉、銅粉'鎳，及 非金屬組份’諸如，氧化!g、氫氧化銘、氫氧化鎂、碳酸 弼、碳酸鎖、石夕酸約、石夕酸鎮、氧化約、氧化鎮、氧化紹、 氮化鋁 '矽石、氮化硼、二氧化鈦、玻璃、氧化鐵、陶究 等。特別地，可使用矽石。 雖然填料可具有任何形狀及任何尺寸，但可使用具有 約5 nm至約20,之尺寸之球树石及非結晶石夕石。 16 201224093 以固體含量為基準，相關於黏合劑組合物之總量，填 料可以約15至40重量％，較佳係約20至35重量％之量存在。 於此範圍内，填料可確保優異流動性、薄膜形成，及黏著 性。 偶合劑 偶合劑作為黏著促進劑，其於製備黏合劑組合物中經 由諸如石夕石之無機材料與有機材料間之化學鍵結而增強黏 著性。 作為偶合劑，普遍地可使用矽烷偶合劑，例如，含環 氧之2-(3,4-環氧環己基)-乙基三曱氧基矽烷、3-環氧丙氧基 三曱氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、含胺基 團之N-2-(胺基乙基）-3-胺基丙基甲基二曱氧基矽烷、 N-2-(胺基乙基）-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙 基)-3-胺基丙基三乙氧基石夕烧、3-胺基丙基三甲氧基石夕烧、 3-胺基丙基三乙氧基矽烷、3-三乙氧基矽烷基-N-(l，3-二甲 基亞丁基）丙基胺、N-苯基-3-胺基丙基三曱氧基矽烷、含巯 基之3 -逾基丙基甲基二甲氧基石夕炫、3 -嫌基丙基三乙氧基石夕 烷，及含異氰酸酯基團之3-異氰酸酯丙基三乙氧基矽烷， 其可單獨或以其等之二或更多者之組合。 相關於呈固態之黏合劑組合物之總量，偶合劑可以約 0.1至10重量％，較佳係約0.5至5重量％，且更佳係約0.7至3 重量％之量存在。於此範圍内，偶合劑可提供優異的黏著 可靠度，同時降低氣泡發生。 有機溶劑 17 201224093 黏合劑組合物可進一步包括一有機溶劑。有機溶劑可 減少用於半導體元件之黏合劑組合物之黏度，及促進薄膜 形成。有機溶劑之例子可不受限地包括曱苯、二曱苯、丙 二醇、單甲基醚乙酸酯、苯、丙酮、甲基乙基酮、四氫呋 喃、二甲基曱胺，及環己酮。 黏合劑組合物可具有於260°C時為約2xl〇4至約15xl〇4 泊之熔融黏度。於此範圍内，黏合劑組合物能使金屬凸塊 與焊料平滑接觸’藉此，促進電連接。特別地，組合物之 熔融黏度可為約3xl〇4至約ΙΟχΙΟ4泊。 黏合劑組合物於結合後可具有約10至約8〇度之焊料與 金屬凸塊之接觸角。於此範圍内，當除去焊料之氧化物層 時，黏合劑組合物提供高表面能量，藉此，促進金屬凸塊 與具有優異濕潤性之焊料間之電連接。 組合物可於金屬凸塊與焊料間形成一金屬間化合物 (IMC)層。此處，於結合後，相關於結合面積，此層具有約 70%或更多，較佳係約8〇%或更多，更佳係約9〇%或更多， 且更佳係約95至1〇〇%之面積。 於本發明之另-方面，提供使用此黏合劑組合物而形 成之用於半導社—齡_。黏合薄卿成—黏合層， 其具有凸塊晶#間電連接之令人滿意的可靠度，且提供去 除Cu凸塊及焊料之氧化物層之—麟劑處理方法。再者， 於藉由熱壓縮之“結合’黏合薄_使凸塊與焊料彼此 完全附接。此外，黏合薄膜可展現優異㈣性，及於足夠 區域上於凸塊與焊料間形成—蠢金屬間化合物層，而未 18 201224093 造成發泡孔隙。 本發明由下列實施例及比較例會更佳瞭解，且非意欲 用以限制藉由所附申請專利範圍界定之本發明範圍。 實施例 用於下列實施例及比較例之組份係如下： (A) 聚合物樹脂 (al)含環氧基團之聚合物樹脂(SG-P3TEA，Tg=150C， 固體含量：15%，Nagase ChemteX Corp.) (a2)含環氧基團之聚合物樹脂（KLS-1062DR， Tg=19°C，固體含量：20%，Fujikura Kasei Co., Ltd.) (B) 環氧樹脂 (bl)以曱酚酚醛清漆為主之環氧樹脂 (YDCN-500-10P > Kukdo Chemical Co., Ltd.) (b2)以萘為主之環氧樹脂（NC-3000H，Nippon Kayaku Co., Ltd.) (b3)雙酚A型環氧樹脂（YD-011，Kukdo Chemical Co.,TI (ΐ ) <π> (m) {ν) (νί y {ν»ϊ Examples of flux active curing agents include, without limitation, cis-5-norbornene-endo-2,3-dicarboxylate Anhydride, biphenylic anhydride, bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, phthalic anhydride, diphenyl ketone-3,3'4, 4'-tetracarboxylic dianhydride, endo-bicyclo[2.2.2]oct-5-ene-2,3-dicarboxylic anhydride, decanoic anhydride, trans-1,2-cyclohexanedicarboxylic anhydride, and Cis-5-norbornene-exo-2,3-dicarboxylic anhydride. In one embodiment, the flux active curing agent may have a melting point of 100 to 300 ° C. In particular, the flux active curing agent may have 120 Melting point to 250 ° C. Within this range, the builder active curing agent ensures liquid stability of the binder composition during high-speed stirring. The flux-active curing agent may not contain a carboxylic acid. In one embodiment, the solid content is For reference, the cosolvent active curing agent may be present in an amount of from 0.1 to 10% by weight, preferably from 1 to 9% by weight, and more preferably from 3 to 8% by weight, based on the total amount of the binder composition. Internally, the reactivity of the flux active curing agent with the epoxy resin can be fully adjusted. In order to allow easy connection, and to exhibit the activity of the lubricant, further, because the active agent of the dabbling agent provides high fluidity, the excellent connectivity between the bumps can be ensured. In one embodiment, the content of the co-solvent active curing agent is Indicated by c and the content of the epoxy resin is represented by b, and b: c may be about 2.5:1 to 10:1, preferably about 3:1 to 8:1. In this range, the active curing agent It can provide excellent lubricant activity 15 201224093 and adhesion. Curing catalyst curing catalyst can be used to reduce the curing time, so that the epoxy resin is completely cured during the semiconductor combination processing method. Examples of the curing catalyst may include melamine-based and imidazole. Mainly, and a catalyst based on triphenylphosphine. In particular, an imidazole-based catalyst can be used. Examples of imidazole-based catalysts include PN-23 and PN-40 (Ajinomoto Co., Inc.)' 2P4MZ>2MA-OK'2MAOK-PW and 2P4 MHZ (Shikoku Chemicals Corp_), and TPP-K and TPP-MK (Hokko Chemical Industry Co., Ltd.)' may be used alone or in their own Used in combination of many. The curing catalyst may be present in an amount of from about 0.01 to 5% by weight, preferably from about 5% to about 3% by weight, and more preferably from about 0.1 to 0.8% by weight, based on the total amount of the binder composition. In this range, the curing catalyst provides excellent heat resistance, avoids rapid reaction of the epoxy resin, and ensures excellent fluidity and connectivity. Filler fillers may include metals such as gold powder, silver powder, copper powder 'nickel, and non-metal components' such as oxidized!g, hydroxide, magnesium hydroxide, barium carbonate, carbonated lock, rock acid, and stone eve Acid town, oxidation, oxidation town, oxidation, aluminum nitride ' vermiculite, boron nitride, titanium dioxide, glass, iron oxide, ceramics and so on. In particular, vermiculite can be used. Although the filler may have any shape and any size, a spherulitic stone having a size of from about 5 nm to about 20, and a non-crystalline stone may be used. 16 201224093 The filler may be present in an amount of from about 15 to 40% by weight, preferably from about 20 to 35% by weight, based on the total of the binder composition, based on the solids content. Within this range, the filler ensures excellent flow, film formation, and adhesion. The coupling agent acts as an adhesion promoter which enhances adhesion in the preparation of the binder composition by chemical bonding between an inorganic material such as a stone and an organic material. As a coupling agent, a decane coupling agent can be generally used, for example, an epoxy-containing 2-(3,4-epoxycyclohexyl)-ethyltrimethoxy decane, a 3-glycidoxytrimethoxy group. Decane, 3-glycidoxypropyltriethoxydecane, amine group-containing N-2-(aminoethyl)-3-aminopropylmethyldimethoxyoxydecane, N-2 -(Aminoethyl)-3-aminopropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropyltriethoxysulfate, 3-aminopropyltrimethyl Oxylate, 3-aminopropyltriethoxydecane, 3-triethoxydecyl-N-(l,3-dimethylbutylidene)propylamine, N-phenyl-3- Aminopropyltrimethoxy decane, fluorenyl-containing 3-propenylmethyldimethoxyxanthene, 3-prosylpropyltriethoxy oxane, and isocyanate-containing 3-isocyanate Propyltriethoxydecane, which may be used alone or in combination of two or more thereof. The coupling agent may be present in an amount of from about 0.1 to 10% by weight, preferably from about 0.5 to 5% by weight, and more preferably from about 0.7 to 3% by weight, based on the total of the solid binder composition. Within this range, the coupling agent provides excellent adhesion reliability while reducing bubble generation. Organic solvent 17 201224093 The adhesive composition may further comprise an organic solvent. The organic solvent can reduce the viscosity of the adhesive composition for the semiconductor element and promote film formation. Examples of the organic solvent include, without limitation, toluene, diphenylbenzene, propylene glycol, monomethyl ether acetate, benzene, acetone, methyl ethyl ketone, tetrahydrofuran, dimethyl decylamine, and cyclohexanone. The binder composition can have a melt viscosity of from about 2 x 1 〇 4 to about 15 x 1 〇 4 poise at 260 °C. Within this range, the binder composition enables the metal bumps to be in smooth contact with the solder' thereby promoting electrical connection. In particular, the composition may have a melt viscosity of from about 3 x 1 〇 4 to about 泊 4 poise. The adhesive composition can have a contact angle of the solder to the metal bumps of from about 10 to about 8 turns after bonding. Within this range, when the oxide layer of solder is removed, the binder composition provides high surface energy, thereby facilitating electrical connection between the metal bumps and the solder having excellent wettability. The composition forms an intermetallic compound (IMC) layer between the metal bumps and the solder. Here, after bonding, the layer has about 70% or more, preferably about 8% or more, more preferably about 9% or more, and more preferably about 95, depending on the bonding area. Up to 1% of the area. In another aspect of the invention, there is provided a semi-conductive body-aged formed using the adhesive composition. The adhesive layer is bonded to the adhesive layer, which has satisfactory reliability of the electrical connection between the bump crystals, and provides a treatment method for removing the oxide bumps of the Cu bumps and the solder. Furthermore, the "bonding" of the thermal bonding is used to bond the bumps and the solders completely to each other. In addition, the adhesive film can exhibit excellent (four) properties and form a sufficient area to form between the bumps and the solder - stupid metal The present invention is more fully understood by the following examples and comparative examples, and is not intended to limit the scope of the invention defined by the scope of the appended claims. The components of the examples and comparative examples are as follows: (A) Polymer resin (al) epoxy resin-containing polymer resin (SG-P3TEA, Tg = 150C, solid content: 15%, Nagase ChemteX Corp.) A2) Epoxy group-containing polymer resin (KLS-1062DR, Tg=19°C, solid content: 20%, Fujikura Kasei Co., Ltd.) (B) Epoxy resin (bl) with indophenol novolac Main epoxy resin (YDCN-500-10P > Kukdo Chemical Co., Ltd.) (b2) Naphthalene-based epoxy resin (NC-3000H, Nippon Kayaku Co., Ltd.) (b3) double Phenolic A type epoxy resin (YD-011, Kukdo Chemical Co.,

Ltd.) (C) 助熔劑活性固化劑 (cl)二苯基酮-3,3’4,4’-四缓酸二酐（Sigma-Aldrich，m.p.: 220°C) (c2)聯苯甲酸針(Sigma-Aldrich，m.p·: 226°C) (c3)順-5-降冰片烯-内型-2,3-二羧酸酐 (Sigma-Aldrich，m.p.: 1660C) •p_: 130oC) (c4)献酸酐（Sigma-Aldrich， 19 201224093 (c5)二環[2,2,2]辛-7-烯-2,3,5,6-四羧酸二酐 (Sigma-Aldrich > m.p.: 300°C) (c6)偏苯三酸酐（Sigma-Aldrich，m.p.: 226°C) (c7)檸檬酸(Sigma-Aldrich，m.p·: 156°C) (c8)亞胺基二乙酸(Sigma-Aldrich，m.p·: 243°C) (c9)乙二胺四乙酸(Sigma-Aldrich，m.p.: 250oC) (C·)非助熔劑活性固化劑：酚固化劑（HF-4M，Meiwa Plastic Industries) (D) 固化催化劑：以咪唑為主之固化催化劑 (2P4MHZ-PW > Shikoku Chemicals Corp.) (E) 填料：球形矽填料(SC-2500SQ，Admatechs) (F) 石夕烧偶合劑：環氧矽烷偶合劑（KBM-303，Shin-Etsu Chemical Co., Ltd.) (G) ’谷劑·甲基乙基_(Samchun Chemical Co.，Ltd.) 20 201224093 第1表 實施例 1 2 3 4 5 (A) (al) - - 100 42.4 - (a2) 133.3 145.1 - 80 133.3 (bl) 29.4 16 - 12 8 (B) (b2) 4.0 16 24 - 8 (b3) - - 10.7 20 16.8 (cl) - - - - 6.2 (c2) - 5.2 - - - (c3) 5.6 - - - - (c4) - - - 6.5 - (C) (c5) - - 4.2 - - (c6) - - - - - (c7) - - - - - (c8) - - - - - (c9) - - - - - (C') - - (D) 0.2 0.2 0.2 0.2 0.2 (E) 20 20 20 20 20 (F) 0.8 0.8 0.8 0.8 0.8 (G) 80 80 80 80 80 21 201224093 第2表 比較例 1 2 3 4 5 (Α) (al) 100 120 48 - 73.6 (a2) - - 66.7 115.2 53.3 (Β) (bl) - 14.6 10.4 12 12 (b2) 10.2 - 24 - 11.4 (b3) 24 16 - 22.2 4 (C) (cl) - - - - - (c2) - - - - - (〇3) - - - - - (c4) - - - - - (c5) - - - - - (c6) 4.8 - - - - (c7) - - 5 - - (c8) - - - 7.5 - (c9) - 4.4 - - - (C，） - - - - - (D) 0.2 0.2 0.2 0.2 0.2 (Ε) 20 20 20 20 20 (F) 0.8 0.8 0.8 0.8 0.8 (G) 80 80 80 80 80 黏合膜之製備 於裝設一高速攪拌器之1公升圓柱燒瓶内，添加第1及2 表中列示之組份，以2000 rpm緩慢分散10分鐘，且以5000 rpm進一步分散30分鐘，藉此製備用於黏合薄膜之組合物。 其後，每一組合物使用一50 μιη膠囊過濾器過濾，且使用 塗敷器塗敷至20 μπι之厚度，製成一黏合膜。此黏合薄膜於 22 201224093 90°C乾燥10分鐘，於110。〇：進一步乾燥5分鐘，且於室溫貯 存1天。 實施例1至5及比較例1至5製備之黏合薄膜係如下評估 ，且結果顯示於第3表。 (1) 高速分散後之液體穩定性 添加此專組份後，實施以2〇〇〇 rpm低速分散分鐘， 以5000 rpm高速分散30分鐘，然後，使用5〇μπι膠囊過濾器 過滤、，藉此开> 成薄膜《此處，若熱由於高速分散而產生使 得此等組份快速反應或減低穩定性，膠凝發生，使得薄膜 之形成不谷易。以南速分散後膠凝程度測定結果，未膠凝 係以Ο表示，些微膠凝係以△表示，且全部膠凝係以χ表示。 (2) 於260°C之熔融黏度(X 1〇4 (Ρ)) 為測1黏合薄膜之熔融黏度’每一黏合薄膜係於6〇〇c 堆疊成多數層’且切成8 mm直徑之圓形樣本。樣品具有4〇〇 至45 0 // m之厚度。熔融黏度係於將樣本以5。c /分鐘之速率 從30°C加熱至300°C時測量。第3表顯示於6〇°c之eta值，此 係估算晶片彼此結合時之260°C時之流動性。 (3) 黏著強度(kgf/晶片） 以一二氧化物薄膜塗覆之725 # m厚之晶圓切成具有 5x5mm尺寸之晶片，於60。(：依次以每一黏合薄膜層合。然 後’切割層合物僅留下結合部份。藉由以黏合薄膜層合且 置於725 // m厚之下晶片（10x10mm)上之一上晶片 (5x5mm)，重疊之晶片接受於1〇〇。(：且其後於260oC之1.0 kgf 之荷重10秒，於175°C固化2小時，及接受pcT條件 (121°C/100%RH)持續8小時，且IR_回流三次。然後，測量 23 201224093 上晶片於250oC之剪切強度。 (4) 發泡孔隙 以一二氧化物薄膜塗覆之80 μ m厚之晶圓切成具有 10x10mm尺寸之晶片，於6〇〇c依次以每一黏合薄膜層合。 然後’切割層合物僅留下結合部份。以黏合薄膜層合之晶 元晶片（10x10 mm)置於具有725μ m厚度及10x10mm尺寸之 一晶元晶片上。重疊之晶片接受於100°C及其後於260°C之 1.0 kg.f之荷重壓縮1〇秒。然後，使用掃瞄式聲波顯微術 (SAT)評估發泡孔隙之發生。晶圓上未出現發泡孔隙係以〇 表示，部份出現細微孔隙係以△表示，且嚴重出現孔隙係以 X表示。 (5) 焊料/ C U凸塊之連接性 凸塊與凸塊之連接性係依據黏合劑組合物使用用以評 估焊料凸塊與Cu&塊間之連接性而製造之晶片評估。優異 連接性係以0表示，部分不連接係以△表示，且無連接係以 X表示。 (6) 焊料/Cu間之IMC層之存在 若一氧化物層於焊料凸塊與Cu凸塊連接時由於助熔劑 活性而去除時，會形成一IMC層（參考J〇urnal 〇f AU〇ysLtd.) (C) Flux active curing agent (cl) diphenyl ketone-3,3'4,4'-tetra-hypo-dianhydride (Sigma-Aldrich, mp: 220 ° C) (c2) dibenzoic acid Needle (Sigma-Aldrich, mp: 226 ° C) (c3) cis-5-norbornene-endo-2,3-dicarboxylic anhydride (Sigma-Aldrich, mp: 1660C) • p_: 130oC) (c4 Anhydride (Sigma-Aldrich, 19 201224093 (c5) bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride (Sigma-Aldrich > mp: 300 °C) (c6) trimellitic anhydride (Sigma-Aldrich, mp: 226 ° C) (c7) citric acid (Sigma-Aldrich, mp: 156 ° C) (c8) imidodiacetic acid (Sigma-Aldrich, mp· : 243 ° C) (c9) ethylenediaminetetraacetic acid (Sigma-Aldrich, mp: 250oC) (C·) non-flux active curing agent: phenol curing agent (HF-4M, Meiwa Plastic Industries) (D) curing catalyst :imidazole-based curing catalyst (2P4MHZ-PW > Shikoku Chemicals Corp.) (E) Filler: spherical ruthenium filler (SC-2500SQ, Admatechs) (F) Shixi siu coupling agent: epoxy decane coupling agent (KBM) -303, Shin-Etsu Chemical Co., Ltd.) (G) 'Samchun Chemical Co., Ltd.' 20 201224093 Example 1 2 3 4 5 (A) (al) - - 100 42.4 - (a2) 133.3 145.1 - 80 133.3 (bl) 29.4 16 - 12 8 (B) (b2) 4.0 16 24 - 8 (b3) - - 10.7 20 16.8 (cl) - - - - 6.2 (c2) - 5.2 - - - (c3) 5.6 - - - - (c4) - - - 6.5 - (C) (c5) - - 4.2 - - (c6) - - - - - (c7) - - - - - (c8) - - - - - (c9) - - - - - (C') - - (D) 0.2 0.2 0.2 0.2 0.2 (E) 20 20 20 20 20 ( F) 0.8 0.8 0.8 0.8 0.8 (G) 80 80 80 80 80 21 201224093 Table 2 Comparative Example 1 2 3 4 5 (Α) (al) 100 120 48 - 73.6 (a2) - - 66.7 115.2 53.3 (Β) ( Bl) - 14.6 10.4 12 12 (b2) 10.2 - 24 - 11.4 (b3) 24 16 - 22.2 4 (C) (cl) - - - - - (c2) - - - - - (〇3) - - - - - (c4) - - - - - (c5) - - - - - (c6) 4.8 - - - - (c7) - - 5 - - (c8) - - - 7.5 - (c9) - 4.4 - - - ( C,) - - - - - (D) 0.2 0.2 0.2 0.2 0.2 (Ε) 20 20 20 20 20 (F) 0.8 0.8 0.8 0.8 0.8 (G) 80 80 80 80 80 Adhesive film is prepared by installing a high-speed stirring Add the components listed in Tables 1 and 2 to a 1 liter cylindrical flask and slowly disperse at 2000 rpm for 10 minutes. Further dispersed for 30 minutes at 5000 rpm, a film of the adhesive composition thereby preparing a composition. Thereafter, each composition was filtered using a 50 μm capsule filter and coated to a thickness of 20 μm using an applicator to form an adhesive film. The adhesive film was dried at 22 201224093 at 90 ° C for 10 minutes at 110. 〇: Further drying for 5 minutes and storage at room temperature for 1 day. The adhesive films prepared in Examples 1 to 5 and Comparative Examples 1 to 5 were evaluated as follows, and the results are shown in Table 3. (1) Liquid stability after high-speed dispersion After adding this component, it was dispersed at a low speed of 2 rpm, dispersed at a high speed of 5000 rpm for 30 minutes, and then filtered using a 5 〇μπι capsule filter. Opening > into a film "Here, if heat is generated due to high-speed dispersion, such components are rapidly reacted or reduced in stability, gelation occurs, so that the formation of the film is not easy. The results of the determination of the degree of gelation after dispersing at a south speed are indicated by Ο, some microgels are represented by Δ, and all gelling systems are represented by χ. (2) Melt viscosity at 260 ° C (X 1 〇 4 (Ρ)) is to measure the melt viscosity of 1 adhesive film 'Each adhesive film is stacked in 6 〇〇c into a majority layer' and cut into 8 mm diameter Round sample. The sample has a thickness of 4 至 to 45 0 // m. The melt viscosity is based on a sample of 5. Rate of c / minute Measured from 30 ° C to 300 ° C. Table 3 shows the eta value at 6 ° C, which is an estimate of the fluidity at 260 ° C when the wafers are bonded to each other. (3) Adhesive strength (kgf/wafer) A 725 #m thick wafer coated with a dioxide film was cut into a wafer having a size of 5 x 5 mm at 60. (: Laminating each adhesive film in turn. Then 'cutting the laminate leaving only the bonding portion. By laminating with an adhesive film and placing it on one of the wafers (10x10 mm) below 725 // m thick) (5x5mm), the overlapped wafers were accepted at 1 〇〇. (: and thereafter at a load of 1.0 kgf at 260 °C for 10 seconds, cured at 175 °C for 2 hours, and subjected to pcT conditions (121 °C / 100% RH) for continued 8 hours, and IR_reflowed three times. Then, measure the shear strength of the wafer at 250oC on 201224093. (4) Foaming pores 80 μm thick wafer coated with a dioxide film is cut into 10x10mm size The wafer is laminated in each of the adhesive films in sequence at 6 ° C. Then the 'cutting laminate leaves only the bonding portion. The wafer wafer (10 x 10 mm) laminated with the adhesive film is placed to have a thickness of 725 μm and On a wafer of 10x10mm size, the overlapped wafer is subjected to a load of 100 kg and then 1.0 kg.f at 260 ° C for 1 sec. and then evaluated using a scanning acoustic microscopy (SAT). The occurrence of foaming pores. The foaming pores on the wafer are not represented by 〇, and some of the fine pores are represented by △ And the severity of the pore system is represented by X. (5) The connectivity of the solder/CU bumps The bumps and bumps are used in accordance with the adhesive composition to evaluate the connectivity between the solder bumps and the Cu& Wafer evaluation of manufacturing. Excellent connectivity is indicated by 0, part of the unconnected is represented by △, and no connection is represented by X. (6) The presence of the IMC layer between the solder/Cu if an oxide layer is on the solder bump When removed from the Cu bumps due to flux activity, an IMC layer is formed (refer to J〇urnal 〇f AU〇ys)

Compounds，第381冊(2004)，151-157頁）。為評估除去氧化 物層之成力，黏合薄膜及焊料球(Sn: 96.8，Ag:3.〇，Cu. 〇 2 , 760/zm)置於一Cu箔上，於26〇〇c壓縮及模製，且於側邊拋 光。然後，Cu箔與焊料球間之IMC層使用掃瞄式電子顯微 術(SEM)觀察。 24 201224093 IMC層存在係以0表示’且缺乏IMC層係以X表示。 (7)接觸角 黏合薄膜及一焊料球(Sn: 96.8，Ag:3.0，Cu: 0.2，760 βπι)置於一Cu箔上，於260°C壓縮及模置，且於一側邊拋 光。然後，Cu馆與焊料球間之接觸角經由SEM觀察。此處， 若一氧化物層由於助熔劑活性而去除，焊料球係於Cu箔之 表面上濕化，藉此，能測量接觸區域之接觸角。測得之接 觸角顯示於第3表。 第3表 E1 E2 E3 E4 E5 CE1 CE2 CE3 CF4 CE5 (1)液體穩定 . 性 0 0 0 0 0 Δ X X X 0 (2)熔融黏度 5.3 4.2 4.7 5.5 6.1 31 - - 5.9 _⑶點著強度 12 12 13 11 13 3 - 亀 10 (4)發泡孔隙 0 0 0 0 0 〇 - _ Λ ⑶連接性 0 0 0 0 0 X - • 〇~ ⑹IMC層 0 0 0 0 0 0 X (7)接觸角 41 45 38 45 50 35 - 匕:貫施例，CE:比較例 液體穩定性，（2)於260°C之溶融黏度0c 104 ，，上黏m(kgf/晶片），（4)發泡孔隙，（5)焊料/Cu凸塊i 接f生，（6)焊料/Cu間之IMO層春在，（7)接觸角 連 於第3表，依據實施例1至5之黏合薄膜於所有測量皆展 現適當性質。但是，於比較例丨，其中，組合物包括經綾醆 曝置之偏笨二酸酐，由於高速攪拌此組合物以形成薄膜而 產生之熱及乾燥時產生之熱，於此組合物中之酸與環氧樹 脂反應。因此，此黏合薄膜會具有由於快速固化反應而造 成之缺陷。再者，此黏合薄膜於高速分散後不具有適當夜 體穩定性，於乾燥部份固化而減低流動性，且不利於晶片 間之連接及黏著。同樣地，於比較例2至4，其中包含酸，Compounds, Vol. 381 (2004), pp. 151-157). In order to evaluate the force of removing the oxide layer, the adhesive film and solder balls (Sn: 96.8, Ag: 3.〇, Cu. 〇2, 760/zm) were placed on a Cu foil and compressed at 26 ° C. And polished on the side. Then, the IMC layer between the Cu foil and the solder ball was observed using a scanning electron microscopy (SEM). 24 201224093 IMC layer presence is indicated by 0' and the lack of IMC layer is indicated by X. (7) Contact angle The adhesive film and a solder ball (Sn: 96.8, Ag: 3.0, Cu: 0.2, 760 βπι) were placed on a Cu foil, compressed and molded at 260 ° C, and polished on one side. Then, the contact angle between the Cu library and the solder balls was observed by SEM. Here, if the oxide layer is removed by the flux activity, the solder balls are wetted on the surface of the Cu foil, whereby the contact angle of the contact region can be measured. The measured contact angle is shown in Table 3. Table 3 E1 E2 E3 E4 E5 CE1 CE2 CE3 CF4 CE5 (1) Liquid stability. Property 0 0 0 0 0 Δ XXX 0 (2) Melt viscosity 5.3 4.2 4.7 5.5 6.1 31 - - 5.9 _(3) Pointing strength 12 12 13 11 13 3 - 亀10 (4) Foaming pores 0 0 0 0 0 〇- _ Λ (3) Connectivity 0 0 0 0 0 X - • 〇~ (6) IMC layer 0 0 0 0 0 0 X (7) Contact angle 41 45 38 45 50 35 - 匕: Example, CE: Comparative liquid stability, (2) Melt viscosity at 260 ° C 0c 104 , Upper adhesion m (kgf / wafer), (4) Foamed pores, (5) Solder/Cu bump i is connected, (6) IMO layer between solder/Cu is in spring, (7) Contact angle is connected to Table 3, and the adhesive film according to Examples 1 to 5 is properly displayed for all measurements. nature. However, in a comparative example, wherein the composition comprises a porphytic acid exposed by hydrazine, an acid generated by agitating the composition at a high speed to form a film, and heat generated during drying, the acid in the composition Reacts with epoxy resin. Therefore, this adhesive film has defects due to a rapid curing reaction. Further, the adhesive film does not have proper night body stability after high-speed dispersion, and is cured in a dry portion to reduce fluidity, and is disadvantageous for connection and adhesion between wafers. Similarly, in Comparative Examples 2 to 4, which contain an acid,

25 201224093 未能確保液體穩定性。於比較例5，其中含有_化劑以替 代助熔劑活性固化劑，因為焊料及Cu之氧化物層未被去 除，因此未形成IMC層，因而未適當實現晶片間之連接。 因此’依據此等實施例，點合劑組合物不僅提供助熔 劑功能及絕緣黏合層之固化控制，而且維持液體穩定性， 而於安裝後未造成由於剩餘酸而造成之缺陷。再者，黏合 劑組合物避免由於祕劑反應性固化劑與環氧化物反應而 以成之固化劑雜減》’及諸如剩餘未反應之固化劑於高 /皿刀解之伴隨缺陷。再者’點合劑組合物於別。c或更多時 穩定地錄至用於晶粒結合之衫孔(tsv)封裝。再者，黏 合劑組合物具有凸塊晶片間電連接之優異可靠度，提供去 除金屬凸塊及焊料之氧化物層之—助炫劑處理方法，及使 凸塊及焊料藉由熱I缩於晶片結合彼此完 其之-黏合薄臈。 俠次L栝 雖然某些實施例已於此處揭露，但 僅係作為例示朗喊供，各種修改 解此4貫_ 未偏離本發明之精神及範_進行。因此’及變化可於 需僅受所附中請專利範圍及其等化物所限制本發明之範圍 【圖式簡單詢^明】 (無） 【主要元件符號說明】 (無） 2625 201224093 Failure to ensure liquid stability. In Comparative Example 5, a _chemicalizing agent was contained in place of the flux active curing agent because the solder and the oxide layer of Cu were not removed, so that the IMC layer was not formed, and thus the connection between the wafers was not properly achieved. Thus, in accordance with such embodiments, the dot composition not only provides fluxing functionality and cure control of the insulating bonding layer, but also maintains liquid stability without causing defects due to residual acid after installation. Further, the adhesive composition avoids the accompanying defects such as the reaction of the curing agent with the epoxide to form a curing agent and the accompanying defect such as the remaining unreacted curing agent. Further, the 'dot composition is different. For c or more, it is stably recorded to the shirt hole (tsv) package for die bonding. Furthermore, the adhesive composition has excellent reliability of electrical connection between the bumps, provides a method for removing the metal bumps and the oxide layer of the solder, and the bump and the solder are shrunk by the heat I. The wafers are bonded to each other and bonded to each other. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Therefore, the changes may be limited to the scope of the invention by the scope of the appended claims and the equivalents thereof. [Simplified inquiry] (none) [Explanation of main component symbols] (None) 26

Claims (1)

201224093 七 1. 、申請專利範圍·· 種用於半導體元件之黏合劑組合物，包含以下列化學 式1至3表示之助熔劑活性固化劑之至少一者： [化學式1]201224093 VII 1. Patent application scope · A binder composition for a semiconductor element, comprising at least one of the flux active curing agents represented by the following Chemical Formulas 1 to 3: [Chemical Formula 1] 其中，A表示含有一酸酐部份及包括0至3個雙鍵之一C4 至C8之環結構；B表示具有一C4至C8之環結構之一脂環 族、不飽和之脂環族或芳香族之部份；R】係選自由一氫 原子、C1至C6烷基基團、C6至C12芳基基團、C6至C12 之經取代之芳基基團、乙烯基基團，及烯丙基基團所構 成之族群；且η係0至2之整數， [化學式2]Wherein A represents a cyclic structure comprising a mono-acid anhydride moiety and a C4 to C8 ring comprising one of 0 to 3 double bonds; and B represents an alicyclic group, an unsaturated alicyclic group or an aromatic group having a ring structure of C4 to C8. a moiety of the family; R] is selected from the group consisting of a hydrogen atom, a C1 to C6 alkyl group, a C6 to C12 aryl group, a substituted C6 to C12 aryl group, a vinyl group, and an allylic group. a group consisting of a group; and η is an integer from 0 to 2, [Chemical Formula 2] 其中’ C表示含有一酸針部份且包括〇至3個雙鍵之一匸4 至C8之環結構；D表示具有一(：4至(：8之環結構之一脂環 族、不飽和之脂環族或芳香族部份；R2係選自由一氫原 子、匸1至<：6烷基基團、C6至C12芳基基團、C6至C12之 經取代之芳基基團、乙烯基基團，及烯丙基基團所構成 27 201224093 之族群；且η係1至4之整數， [化學式3]Wherein 'C denotes a ring structure containing an acid needle moiety and including one to three double bonds 匸4 to C8; D means having one (:4 to (8) ring structure, one alicyclic group, unsaturated An alicyclic or aromatic moiety; R2 is selected from the group consisting of a hydrogen atom, a hydrazine 1 to a <:6 alkyl group, a C6 to C12 aryl group, a substituted C6 to C12 aryl group, a vinyl group, and an allyl group constitutes a group of 27 201224093; and an integer of η is 1 to 4, [Chemical Formula 3] 其中，Ε表示含有一酸酐部份且包括0至3個雙鍵之一C4 至C8之環結構；F表示具有一C4至C8之環結構之一脂環 族、不飽和脂環族或芳香族部份；R1 2係選自由一氫原 子、C1至C6烷基基團、C6至C12芳基基團、C6至C12之 經取代之芳基基團、乙烯基基團，及烯丙基基團所構成 之族群；R4係選自以下列化學式⑴至（viii)表示之化合 物；且η係1至4之整數， CH3 CH3 I I 一 CH2 一 -CH 一 -C- -C- CH3 (ii) m (iv) ΟWherein Ε represents a cyclic structure comprising a mono-acid anhydride moiety and comprising one of 0 to 3 double bonds C4 to C8; and F represents an alicyclic group, an unsaturated alicyclic group or an aromatic having a ring structure of C4 to C8. a moiety; R1 2 is selected from the group consisting of a hydrogen atom, a C1 to C6 alkyl group, a C6 to C12 aryl group, a C6 to C12 substituted aryl group, a vinyl group, and an allyl group. a group consisting of a group; R4 is selected from the compounds represented by the following chemical formulas (1) to (viii); and η is an integer of 1 to 4, CH3 CH3 II-CH2-CH-C--C-CH3 (ii) m (iv) Ο 28 1 如申請專利範圍第1項之黏合劑組合物，其中，相關於 該黏合劑組合物之總量，該助炼劑活性固化劑係以〇. 1 至10重量％之量存在。 2 如申請專利範圍第1項之黏合劑組合物，其中，該助熔 201224093 劑活性固化劑具有約100至約300°c之熔點。 4. 如申請專利範圍第1項之黏合劑組合物，其中，該組合 物具有於260°C時係約2xl04至約15xl04泊之炼融黏度。 5. 如申請專利範圍第1項之黏合劑組合物，其中，該組合 物於結合後具有約10至約80度之焊料與一金屬凸塊之 接觸角。 6. 如申請專利範圍第1項之黏合劑組合物，其中，該組合 物包含約0· 1至約5重量％之一以味嗤為主之固化催化 劑。 7·如申清專利範圍苐1項之黏合劑組合物，其中，該組合 物包含一聚合物樹脂、一環氧樹脂、以化學式丨至3表示 之該等助溶劑活性固化劑之至少一者、填料，及一固化 催化劑。 8.如申請專利範圍第7項之黏合劑組合物，其中，以該固 體含量為基準’該組合物包含約20至60重量％之該聚合 物樹脂，約10至60重量％之該環氧樹脂，約〇.1至約1〇重 量％之該助熔劑活性固化劑，約0.01至5重量％之該固化 催化劑，及約15至40重量％之該填料。 9_如申請專利範圍第8項之黏合劑組合物，其中，該聚合 物樹脂包含一環氧基團且具有約_3〇至8〇〇c之玻璃轉移 溫度。 忉.如申請專利範圍第8項之黏合劑組合物，其中’該組合 物進一步包含約〇.〇1至約1〇重量％之一矽烷偶合劑。 U· —種用於半導體元件之黏合薄膜，包含如申請專利範圍 29 201224093 第1至10項甲任一項之黏合劑組合物。 12. 如申請專利範圍第11項之黏合薄膜，其中，該黏合薄膜 於金屬凸塊與一焊料間形成一金屬間化合物層，相關 於結合後之一結合面積’該金屬間層具有約70%或更多 之面積。 13. 如申明專利範圍第丨i項之黏合薄膜，其中，該黏合薄膜 於Cu與一焊料間形成一金屬間化合物層，相關於結合後 之一結合面積，該金屬間層具有約7〇%或更多之面積。 14. 一種將第一及第二之具凸塊之半導體晶片彼此黏著之 方法，其係使用由如申請專利範圍第丨至⑺項中任一項 之黏合劑組合物形成之一黏合薄膜。 15. —種半導體封裝件，包含： 一晶片安裝基材；以及 第一及第二半導體晶片，係堆疊於該晶片 表面上，該第-及第二半導體晶片係❹巾請料範圍 第11項之黏合薄膜彼此黏著。 30 201224093 四、指定代表圖： (一) 本案指定代表圖為：第（ ）圖。（無) (二) 本代表圖之元件符號簡單說明： 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式：The binder composition of claim 1, wherein the fluxing agent active curing agent is present in an amount of from 0.1 to 10% by weight, based on the total amount of the binder composition. [2] The adhesive composition of claim 1, wherein the flux 201224093 active curing agent has a melting point of from about 100 to about 300 °C. 4. The adhesive composition of claim 1, wherein the composition has a smelting viscosity of from about 2 x 10 4 to about 15 x 104 poise at 260 °C. 5. The adhesive composition of claim 1, wherein the composition has a contact angle of about 10 to about 80 degrees of solder to a metal bump after bonding. 6. The adhesive composition of claim 1, wherein the composition comprises from about 0.1 to about 5% by weight of a toluene-based curing catalyst. 7. The adhesive composition of claim 1, wherein the composition comprises a polymer resin, an epoxy resin, and at least one of the cosolvent active curing agents represented by the formula 丨3 , a filler, and a curing catalyst. 8. The adhesive composition of claim 7, wherein the composition comprises from about 20 to 60% by weight of the polymer resin, and from about 10 to 60% by weight of the epoxy based on the solid content. The resin, from about 1 to about 1% by weight of the flux active curing agent, from about 0.01 to 5% by weight of the curing catalyst, and from about 15 to 40% by weight of the filler. The adhesive composition of claim 8, wherein the polymer resin comprises an epoxy group and has a glass transition temperature of about _3 Torr to 8 〇〇c. The adhesive composition of claim 8, wherein the composition further comprises from about 0.1 to about 1% by weight of a decane coupling agent. U. A type of adhesive composition for a semiconductor component, comprising the adhesive composition of any one of claims 1 to 10, claim 1, 2012. 12. The adhesive film of claim 11, wherein the adhesive film forms an intermetallic compound layer between the metal bump and a solder, and the intermetallic layer has a bonding area of about 70%. Or more area. 13. The adhesive film of claim ii, wherein the adhesive film forms an intermetallic compound layer between Cu and a solder, and the intermetallic layer has about 7〇% associated with one bonded area after bonding. Or more area. A method of adhering a first and a second bumped semiconductor wafer to each other, which is an adhesive film formed by using the adhesive composition according to any one of claims (7). 15. A semiconductor package comprising: a wafer mounting substrate; and first and second semiconductor wafers stacked on a surface of the wafer, the first and second semiconductor wafers The adhesive films adhere to each other. 30 201224093 IV. Designated representative map: (1) The representative representative of the case is: ( ). (None) (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
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