CN103258951B - 压电元件及压电元件的制造方法 - Google Patents
压电元件及压电元件的制造方法 Download PDFInfo
- Publication number
- CN103258951B CN103258951B CN201310054960.1A CN201310054960A CN103258951B CN 103258951 B CN103258951 B CN 103258951B CN 201310054960 A CN201310054960 A CN 201310054960A CN 103258951 B CN103258951 B CN 103258951B
- Authority
- CN
- China
- Prior art keywords
- electrode
- groove
- ceramic substrate
- piezoelectric element
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 239000000919 ceramic Substances 0.000 claims abstract description 129
- 239000013078 crystal Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000003754 machining Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011800 void material Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 33
- 238000012360 testing method Methods 0.000 description 26
- 239000010931 gold Substances 0.000 description 20
- 230000006835 compression Effects 0.000 description 12
- 238000007906 compression Methods 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- 230000008602 contraction Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 229910052573 porcelain Inorganic materials 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- 238000000635 electron micrograph Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N 1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylic acid Chemical compound C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012034937A JP5905292B2 (ja) | 2012-02-21 | 2012-02-21 | 圧電素子及び圧電素子の製造方法 |
| JP2012-034937 | 2012-02-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103258951A CN103258951A (zh) | 2013-08-21 |
| CN103258951B true CN103258951B (zh) | 2017-04-12 |
Family
ID=47722141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310054960.1A Expired - Fee Related CN103258951B (zh) | 2012-02-21 | 2013-02-20 | 压电元件及压电元件的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9142750B2 (enExample) |
| EP (1) | EP2631959A3 (enExample) |
| JP (1) | JP5905292B2 (enExample) |
| CN (1) | CN103258951B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9972767B2 (en) * | 2013-02-07 | 2018-05-15 | Danfoss A/S | All compliant electrode |
| US10707404B2 (en) * | 2016-07-07 | 2020-07-07 | Tdk Corporation | Piezoelectric element |
| US11296272B2 (en) * | 2017-07-20 | 2022-04-05 | Taiyo Yuden Co., Ltd. | Multilayer piezoelectric element, piezoelectric vibration apparatus, and electronic device |
| FR3097668B1 (fr) | 2019-06-24 | 2021-07-02 | Commissariat Energie Atomique | Dispositif a surface tactile |
| CN114008804A (zh) * | 2019-06-28 | 2022-02-01 | 富士胶片株式会社 | 压电薄膜 |
| JP6725049B1 (ja) * | 2019-12-16 | 2020-07-15 | Tdk株式会社 | 積層圧電素子 |
| CN117044238A (zh) * | 2021-03-30 | 2023-11-10 | 富士胶片株式会社 | 压电薄膜 |
| US20230099440A1 (en) * | 2021-09-28 | 2023-03-30 | Skyworks Global Pte. Ltd. | Piezoelectric mems device with thermal compensation from different material properties |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335861A (ja) * | 1992-05-29 | 1993-12-17 | Tokin Corp | 圧電振動子の製造方法 |
| US5755909A (en) * | 1996-06-26 | 1998-05-26 | Spectra, Inc. | Electroding of ceramic piezoelectric transducers |
| JPH11179905A (ja) * | 1997-12-22 | 1999-07-06 | Nec Corp | インクジェットヘッドとその製造方法 |
| US7548015B2 (en) * | 2000-11-02 | 2009-06-16 | Danfoss A/S | Multilayer composite and a method of making such |
| DE60238599D1 (de) * | 2001-03-12 | 2011-01-27 | Ngk Insulators Ltd | Betätigungsglied des typs mit piezoelektischem/elektrostriktivem film und verfahren zu seiner herstellung |
| JP4473529B2 (ja) * | 2002-07-12 | 2010-06-02 | 日本碍子株式会社 | 圧電／電歪膜型素子、及びその製造方法 |
| EP1570415B1 (en) * | 2002-12-12 | 2009-08-19 | Danfoss A/S | Tactile sensor element and sensor array |
| JP4344554B2 (ja) * | 2003-07-29 | 2009-10-14 | 京セラ株式会社 | 圧電アクチュエータの製造方法及び印刷ヘッドの製造方法 |
| JP4359915B2 (ja) * | 2003-08-21 | 2009-11-11 | 京セラ株式会社 | 圧電磁器振動体及び圧電共振装置 |
| JP4480371B2 (ja) | 2003-08-26 | 2010-06-16 | 京セラ株式会社 | 積層型圧電素子及び噴射装置 |
| JP4593912B2 (ja) * | 2003-12-24 | 2010-12-08 | 京セラ株式会社 | 積層型圧電素子およびその製法、並びに噴射装置 |
| US8378554B2 (en) * | 2005-10-28 | 2013-02-19 | Kyocera Corporation | Multi-layer piezoelectric element and injection apparatus using the same |
| JP5004484B2 (ja) * | 2006-03-23 | 2012-08-22 | 日本碍子株式会社 | 誘電体デバイス |
| JP5032791B2 (ja) * | 2006-05-15 | 2012-09-26 | アルプス電気株式会社 | 電子部品の製造方法 |
| WO2008053569A1 (en) * | 2006-10-31 | 2008-05-08 | Kyocera Corporation | Multi-layer piezoelectric element and injection apparatus employing the same |
| EP2124268B1 (en) * | 2006-11-29 | 2015-04-15 | Kyocera Corporation | Laminated piezoelectric element, jetting device provided with the laminated piezoelectric element and fuel jetting system |
| EP2800158B1 (en) * | 2007-08-29 | 2016-01-06 | Kyocera Corporation | Multi-layer piezoelectric element, and ejection apparatus and fuel ejection system that employ the same |
| JP2011041136A (ja) * | 2009-08-17 | 2011-02-24 | Taiyo Yuden Co Ltd | 弾性波デバイスおよびその製造方法 |
| WO2011027879A1 (ja) * | 2009-09-07 | 2011-03-10 | 日本碍子株式会社 | 圧電／電歪膜型素子の製造方法 |
| JPWO2011089746A1 (ja) * | 2010-01-20 | 2013-05-20 | 株式会社村田製作所 | 分波器 |
| JP5714361B2 (ja) * | 2011-03-01 | 2015-05-07 | 日本碍子株式会社 | 端子電極形成方法及びそれを用いた圧電／電歪素子の製造方法 |
| US8891222B2 (en) * | 2012-02-14 | 2014-11-18 | Danfoss A/S | Capacitive transducer and a method for manufacturing a transducer |
| WO2013171913A1 (ja) * | 2012-05-12 | 2013-11-21 | 京セラ株式会社 | 圧電アクチュエータ、圧電振動装置および携帯端末 |
-
2012
- 2012-02-21 JP JP2012034937A patent/JP5905292B2/ja active Active
-
2013
- 2013-02-19 EP EP13155729.0A patent/EP2631959A3/en not_active Withdrawn
- 2013-02-19 US US13/770,261 patent/US9142750B2/en active Active
- 2013-02-20 CN CN201310054960.1A patent/CN103258951B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5905292B2 (ja) | 2016-04-20 |
| US9142750B2 (en) | 2015-09-22 |
| JP2013171981A (ja) | 2013-09-02 |
| EP2631959A3 (en) | 2014-09-17 |
| US20130214647A1 (en) | 2013-08-22 |
| CN103258951A (zh) | 2013-08-21 |
| EP2631959A2 (en) | 2013-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103258951B (zh) | 压电元件及压电元件的制造方法 | |
| CN103477405B (zh) | 电子设备及其制造方法 | |
| JP2015516362A5 (enExample) | ||
| CN103180268B (zh) | 陶瓷烧结体的制造方法、陶瓷烧结体及陶瓷加热器 | |
| JP2013171981A5 (enExample) | ||
| CN105555704B (zh) | 在mems器件中形成平面的牺牲材料的方法 | |
| JP2006165007A5 (enExample) | ||
| EP1491652A4 (en) | HIGH-STRENGTH, HIGH-TIRE Mo-ALLOY MATERIAL AND METHOD OF MANUFACTURING THEREOF | |
| JP2002043644A (ja) | 薄膜圧電素子 | |
| JP6992239B2 (ja) | 車載用ｐｚｔ薄膜積層体の製造方法 | |
| CN104342619A (zh) | 钼靶材的制作方法 | |
| EP3091586B1 (en) | High temperature flexural mode piezoelectric dynamic pressure sensor and method of forming the same | |
| US20100194247A1 (en) | Piezoceramic multilayer actuator with high reliability | |
| CN106458631B (zh) | 氧化物介电体及其制造方法、以及固态电子装置及其制造方法 | |
| JP4545896B2 (ja) | ヒータユニット及びその製造方法 | |
| JP2019533309A (ja) | 熱接触が制御された加熱装置 | |
| KR20120105951A (ko) | 강유전체 폴리머 나노도트 소자 및 그 제조를 위한 디웨팅 프로세스 | |
| KR101113614B1 (ko) | 압전체 후막의 제조 방법 | |
| JP2004009681A (ja) | 積層体の製造方法、それに用いる金型および金型の製造方法 | |
| KR101993425B1 (ko) | 반도체 제조에 사용되는 면상 발열체 및 이의 제조방법 | |
| EP3039704B1 (en) | Rf mems electrodes with limited grain growth | |
| JP6429873B2 (ja) | ピクセルを備えたマイクロシステムの製造方法 | |
| JP4427979B2 (ja) | 積層セラミック電子部品の製造方法 | |
| KR20170141353A (ko) | 3ｄ 나노미터 구조 제조 방법 | |
| TWI308470B (en) | Substrate structure having high dielectric compound material and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170412 Termination date: 20210220 |