CN103227120A - 用于电路器件的引线接合方法 - Google Patents
用于电路器件的引线接合方法 Download PDFInfo
- Publication number
- CN103227120A CN103227120A CN2013100368023A CN201310036802A CN103227120A CN 103227120 A CN103227120 A CN 103227120A CN 2013100368023 A CN2013100368023 A CN 2013100368023A CN 201310036802 A CN201310036802 A CN 201310036802A CN 103227120 A CN103227120 A CN 103227120A
- Authority
- CN
- China
- Prior art keywords
- lead
- wire
- connecting method
- capillary
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
- H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/48997—Reinforcing structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供了电路器件中的引线接合方法,电路器件安装在引线框架上,该引线接合方法包括:如果毛细管的操作停止则计算停止时间;如果停止时间超过参考时间,则去除形成在毛细管的末端上的被污染的无空气焊球(FAB);形成新的FAB;以及重新开始引线接合工艺。
Description
技术领域
根据本发明构思的装置和方法涉及用于电路器件的引线接合。
背景技术
电路器件例如发光二极管(LED)是可通过用化合物半导体的PN结来构造光发射源而发射各种颜色的光的半导体器件。LED具有长的寿命、小的尺寸和轻的重量,并由于光的强方向性而可以以低电压驱动。此外,LED能够承受冲击和振动、不需要预热时间和复杂驱动并可以封装为各种形状,因此可以应用于各种应用中。
电路器件诸如LED在经过封装工艺之后被制造为发光器件封装,在该封装工艺中电路器件安装在金属引线框架和模塑框架上。在该过程中,电路器件的电极焊盘和引线框架通过执行引线接合工艺而电连接到彼此。
发明内容
示范性实施例可以解决至少以上问题和/或缺点以及没有在上面描述的其他缺点。此外,不要求示范性实施例克服上述缺点,示范性实施例可以不克服上述任何问题。
一个或多个示范性实施例提供了引线接合方法以及可获得接合引线的耐久性的装置。
根据示范性实施例的一方面,提供一种用于安装在引线框架上的电路器件的引线接合方法,该引线接合方法包括:如果毛细管的操作停止则计算停止时间;如果停止时间超过参考时间,则去除在毛细管的末端上形成的被污染的无空气焊球(free air ball,FAB);以及形成新的FAB并重新开始引线接合工艺。
被污染的FAB的去除可以包括:移动毛细管到引线框架的虚设区域而不是其上安装电路器件的区域,以及将被污染的FAB接合到虚设区域。
引线接合方法还可以包括,如果停止时间超过参考时间,则释放固定单元,该固定单元用于将引线框架固定在支撑块上。引线接合方法还可以包括在去除被污染的FAB之后通过驱动固定单元而将引线框架固定在支撑块上。
参考时间可以为约三分钟。
根据示范性实施例的另一方面,提供一种将电路器件安装在引线框架上的引线接合方法,该引线接合方法包括:如果引线接合装置的操作由于错误而停止则释放固定单元,该固定单元用于将引线框架固定在支撑块上;计算停止时间并等待直到错误消除;当错误已经消除时,如果停止时间超过参考时间,则在引线框架的虚设区域中执行虚设接合;以及重新开始引线接合工艺。
引线接合方法还可以包括在执行引线接合工艺的重新开始之前通过驱动固定单元将引线框架固定在支撑块上。
虚设接合的执行可以包括:如果引线接合装置的操作在FAB形成在毛细管的末端上的情形下停止,则将FAB接合到虚设区域。
虚设接合的执行可以包括:如果引线接合装置的操作在FAB没有形成在毛细管的末端上的情形下停止,则在FAB形成在毛细管的末端上之后将FAB接合到虚设区域。
参考时间可以为约三分钟。
附图说明
通过参照附图描述某些示范性实施例,以上和/或其他的方面将变得更加明显,附图中:
图1是由根据示范性实施例的引线接合方法制造的发光器件封装的截面图;
图2是应用根据示范性实施例的引线接合方法的引线接合装置的示范性结构的透视图;
图3是根据示范性实施例通过接合引线到发光器件芯片的电极焊盘所形成的连接部分的截面图;
图4是根据示范性实施例的提升以形成接合引线的形状的毛细管的截面图;
图5示出根据示范性实施例通过接合引线到引线框架的端子部分所形成的连接部分;
图6示出根据示范性实施例在形成连接部分之后被切断的引线;
图7示出根据示范性实施例的焊球接合;
图8示出由夹置在FAB与电极焊盘之间的外部物质形成的界面;
图9是引线框架的虚设区域的截面图;
图10是根据示范性实施例的虚设接合的截面图,该虚设接合在引线框架的虚设区域中执行以去除被污染的FAB;
图11示出根据示范性实施例的接合方法的流程图;
图12示出根据示范性实施例的当错误被检测时的接合方法的流程图;以及
图13示出根据示范性实施例的接合方法的具体流程图。
具体实施方式
下面参照附图更详细地描述某些示范性实施例。
在以下的描述中,相似的附图标记即使在不同的附图中也用于相似的元件。在描述中定义的内容,诸如具体构造和元件,被提供来帮助对示范性实施例的全面理解。然而,示范性实施例可以被实践而没有那些具体限定的内容。此外,公知的功能或构造没有详细描述,因为它们会以不必要的细节使本申请模糊。
图1是通过根据示范性实施例的引线接合方法制造的发光器件封装1的截面图。参照图1,发光器件封装1可以包括具有空腔3的封装主体2,发光器件芯片30安装在空腔3中。
发光器件芯片30可以是发光二极管芯片。发光二极管芯片可以根据在形成化合物半导体(其构成发光二极管芯片)中使用的材料而发射蓝光、绿光或红光。例如,发蓝光二极管芯片可以具有量子阱层结构的有源层,其中氮化镓(GaN)层和铟镓氮(InGaN)层交替形成。由AlXGaYNZ化合物半导体形成的P型覆层和N型覆层可以形成在有源层的上部分和下部分中。作为另一示例,发光二极管芯片可以发射无色的紫外(UV)线。在本示范性实施例中,发光器件芯片30为发光二极管芯片。然而,这不限于此。例如,发光器件芯片30可以是UV光二极管芯片、激光二极管芯片、有机发光二极管芯片等。
封装主体2可以包括导电引线框架20和模塑框架10。引线框架20可以包括:安装部分21,发光器件芯片30安装在其上;以及第一和第二端子部分22和23,电连接到发光器件芯片30。引线框架20可以通过在导电金属板诸如铝(Al)、铜(Cu)等上执行压制工艺、蚀刻工艺等而制造。去除附着到引线框架20的外部物质的清洁工艺可以在下面将描述的注塑成型工艺之前进行。此外,可以执行镀覆工艺以执行引线框架20的表面处理。
模塑框架10可以通过执行例如嵌入注塑成型等工艺与引线框架20组装在一起。模塑框架10可以由例如电绝缘聚合物形成。模塑框架10可以通过在引线框架20上执行嵌入注塑成型等而由聚合物诸如聚邻苯二甲酰胺(polyphthalamide,PPA)、液晶聚合物(LCP)等的注塑成型来形成。模塑框架10形成为凹入形状,其中安装部分21以及第一和第二端子部分22和23暴露到外部。
空腔3形成在封装主体2中。安装部分21以及第一和第二端子部分22和23构成空腔3的下部结构。空腔3的内表面11可以是反射从发光器件芯片30发射的光的反射表面,被该反射表面反射的光进一步从发光器件芯片封装1发射。具有高的光反射性的材料诸如银(Ag)、铂(Pt)、钛(Ti)、铬(Cr)、铜(Cu)等可以被涂覆或沉积在内表面11上,或者由上述材料的一种或多种形成的板可以接合到内表面11。内表面11的至少一部分可以由引线框架20形成。
当发光器件芯片30安装在引线框架20上并且模塑框架10与引线框架20组装在一起时,执行用于将发光器件芯片30的阴极和阳极与第一和第二端子部分22和23电连接的引线接合工艺。第一和第二端子部分22和23可以分别连接到发光器件芯片30的阴极和阳极。第一电极焊盘31和第二电极焊盘32可以设置在发光器件芯片30上并可以分别电连接到阴极和阳极。第一和第二电极焊盘31和32的每个可以分别利用第一和第二接合引线41和42连接到第一和第二端子部分22和23的每个。第一和第二端子部分22和23的部分暴露到模塑框架10的外部并用作用于供应电流到发光器件芯片30的端子。
因此,发光器件封装1具有以下构造,其中发光器件芯片30设置在形成空腔3的底部的表面上,封装主体2的内表面11用作用于反射光并向发光器件封装1的外部发射光的反射部分。引线框架20的安装部分21以及第一和第二端子部分22和23暴露到模塑框架10的下部并可以用作散热表面。
在完成引线接合之后,由透光树脂诸如硅等形成的包封层50可以形成在空腔3中以保护发光器件芯片30以及第一和第二接合引线41和42免受外部环境影响。包封层50可以包括荧光物质,该荧光物质将从发光器件芯片30发射的光改变为期望颜色的光。荧光物质可以是单种物质或以预定比例混合的多种物质。
图2是引线接合装置100的示范性结构的透视图。参照图2,多个模塑框架52通过例如注塑成型与引线框架20组装在一起,由此形成多个封装主体54。发光器件芯片30安装在每个封装主体54的空腔3中。引线框架20被传输单元110传输。例如,封装主体54中的一个被传输单元110传输到支撑块120。用于预热引线框架20的加热器121可以设置在支撑块120上。加热器121的温度可以升高至约170至200℃。
固定单元130可以通过驱动器140在固定位置58(由图2的实线指示)与释放位置59(由图2的虚线指示)之间移动,其中在固定位置58,引线框架20固定在例如支撑块120上,在释放位置59,引线框架20从支撑块120释放。驱动器140可以通过例如在上下方向上移动固定单元130而将固定单元130移动到固定位置58和释放位置59。开口131形成在固定单元130中以使毛细管200接近用于引线接合的封装主体54。开放状态检测器(openstate detector)150检测固定单元130的位置。开放状态检测器150可以实施为利用例如光学检测法、电检测法、机械检测法或其组合的传感器。
引线201经由毛细管200提供。夹具210可以在引线201被夹住的夹紧状态与引线201被释放的释放状态之间切换。毛细管200可以通过利用驱动单元(未示出)在上下方向上以及在相对于上下方向的移动的横向方向512上移动。横向方向512可以基本平行于移动方向56并可以与移动方向56一致或相反。引线201可以是由例如金、铜、银等形成的导线。用于产生振动的振动器例如超声振动器(未示出)可以嵌入在毛细管200中。加热单元可以实施为在暴露于毛细管200的端部的引线201中形成无空气焊球(FAB)。加热单元可以是例如放电电极230。放电电极230通过由高电压单元240供应的高电压在放电电极230与引线201之间引起瞬时的放电现象并熔化引线201。因此,基本上为球形的第一FAB260可以形成在引线201的端部上。FAB检测器250检测第一FAB260是否正常形成也就是没有错误。例如,FAB检测器250可以是检测彼此连接的放电电极230与引线201之间流动的电流的电流传感器。
控制器300控制引线接合工艺并可以包括中央处理单元(CPU)310。用于控制引线接合工艺的控制程序可以存储在存储介质320中。存储介质320可以是只读存储器(ROM)、可擦除且可编程ROM(EPROM)、CD-ROM、DVD-ROM、通用串行总线(USB)存储器、硬盘等。控制器300可以通过从存储介质320读取控制程序以及通过驱动控制程序来控制引线接合工艺。控制程序可以通过更换存储介质320或存储新的控制程序在存储介质320中而升级。
在下文,将描述引线接合方法的示例。
引线接合工艺可以在控制器300读取存储在存储介质320中的控制程序并执行该控制程序时开始。控制器300可以控制引线接合装置的元件以基于该控制程序执行引线接合工艺。
封装主体54通过由传输单元110传输引线框架20而对准在支撑块120上。然后,固定单元130通过驱动器140下降到固定位置58,引线框架20变为固定在支撑块120上。
图3是通过将引线201接合到发光器件芯片30的第一电极焊盘31而形成的第一连接部分61的截面图。如图3的虚线指示,毛细管200设置在封装主体54上方的位置502处。当放电电极230接触经由毛细管200提供的引线201的末端并且高电压通过高电压单元240供应到放电电极230时,在引线201的末端与放电电极230之间发生放电。因此,引线201的末端被融化,形成第一FAB260。夹具210保持在夹紧状态,毛细管200被降低。当毛细管200降低到下部位置504时,引线201从引线供应单元220收回。第一FAB260接触发光器件芯片30的第一电极焊盘31,毛细管200施加适当的负载到第一FAB260以将第一FAB260接合到第一电极焊盘31。毛细管200可以在施加负载到第一FAB260时产生超声振动。因此,第一FAB260接合到第一电极焊盘31从而形成第一连接部分61。这样的接合方法被称作焊球接合方法。
接着,执行升高毛细管200的工艺以形成环形接合引线。图4是毛细管200的截面图,毛细管200从下部位置504升高到封装主体54上方的位置506以形成第一接合引线41的形状。参照图4,当毛细管200升高时,夹具210保持在释放状态。毛细管200的升高的位置506可以考虑到第一电极焊盘31与第一端子部分22之间的距离以及引线环高度而适当地确定。位置506可以与位置502相同或者是不同的位置。在封装主体54上方的升高状态的毛细管200的路径可以根据引线环的期望或预定形状来确定。毛细管200可以在相对于移动方向56的垂直方向510上升高,并可以在被升高的同时在横向方向512上移动。
当毛细管200到达升高位置506时,停止升高操作,毛细管200沿由图4的箭头A指示的曲线形状的轨迹下降到第一端子部分22。当毛细管200降低时,夹具210保持在夹紧状态。图5是通过将引线201接合到引线框架20的第一端子部分22而形成的第二连接部分62的截面图。当引线201接触第一端子部分22时,第一接合引线41的形状形成为环,如图5所示。在此状态下,通过施加适当的负载和超声振动到引线201,引线201接合到第一端子部分22从而形成第二连接部分62。
图6示出在形成第二连接部分62之后被切断的引线201。具体地,当夹具210保持在夹紧状态时,毛细管200升高,引线201被切断,完成引线接合工艺。这样的接合方法被称为针脚式接合法。
在切断引线201之后,夹具210改变为释放状态,毛细管200被进一步升高到位置520,以形成延伸超出毛细管200的端部212的尾部202。尾部202用于形成在下面描述的后续工艺中使用的第二FAB262。
为了改善第二连接部分62的接合强度,可以在针脚式接合之外执行焊球接合。例如,如图3的虚线所示,毛细管200可以设置在从封装主体54升高的位置502。放电电极230可以接触从毛细管200延伸的引线201的尾部202。引线201的尾部202可以被熔化,可以形成第二FAB262。然后,当夹具210保持在夹紧状态时,毛细管200降低,使得第二FAB262接触第二连接部分62。毛细管200可以施加合适的负载到第二FAB262并可以在第二FAB262上产生超声振动以将第二FAB262接合到第二连接部分62。尾部202可以在形成第一FAB260之前形成,类似于以上参照第二FAB262描述的。
图7示出附加到第二连接部分62以增加接合力的焊球接合。如图7所示,第二FAB262接合到第二连接部分62。如果夹具210保持在夹紧状态,则毛细管200升高,引线201被切断,完成引线接合工艺。在引线201被切断之后,夹具210改变为释放状态并被进一步升高,尾部202形成在毛细管200的端部212上。
将第二电极焊盘32与发光器件芯片30的第二端子部分23连接的第二接合引线42可以通过与上述工艺相同或相似的工艺形成。
如果在上述引线接合工艺中发生错误,则可以停止引线接合工艺。错误可能在形成具有不合适尺寸的第一FAB260或第二FAB262时、当引线201被切断时、当毛细管200被错误地移动时等情形时发生。
参照图6和图7,第一FAB260或第二FAB262的尺寸取决于尾部202的长度。当毛细管200在形成第一连接部分61或第二连接部分62之后被升高时,夹具210可以比预定时间慢或快地从释放状态改变到夹紧状态。结果,尾部202可能形成为不合适的长度。在此情形下,当利用放电电极230发生放电时,第一FAB260或第二FAB262可能过小或者可能远离毛细管200的末端。在第一FAB260或第二FAB262的形成中的这样的缺陷可以被FAB检测器250检测。如果放电电极230与尾部202之间的距离根据尾部202的长度而改变,则在放电时通过引线201流动的电流的值改变。FAB检测器250检测通过引线201流动的电流值并将检测的电流值传输到控制器300。控制器300可以基于从FAB检测器250传输的电流值来确定在形成第一FAB260或第二FAB262时是否发生缺陷。
此外,当引线201被切断时,例如如果错误的引线张力被张力检测器(未示出)检测,则控制器300可以停止引线接合装置的操作,该张力检测器检测引线201的张力以表示引线201是否被切断。
因此,当工艺错误发生时,如上所述,控制器300可以停止引线接合装置的操作。控制器300可以开启报警灯或产生报警声音以通知工艺管理人员或用户发生错误。控制器300还可以在工艺管理屏幕(未示出)上报告错误。控制器300可以通过提升固定单元130(该固定单元130将引线框架20固定在支撑块120上)而帮助到达释放位置59,从而以可见的方式表明错误。固定单元130的位置可以通过开放状态检测器150而传达到控制器300。
如上所述,当错误发生时,引线接合装置保持在等待状态直到用于消除错误的动作被工艺管理人员或用户完成。在等待状态,第一FAB260或第二FAB可以暴露到空气。在此情形下,外部物质可能附着到第一FAB260或第二FAB262的表面上。引线框架20在被支撑在支撑块120上的同时被加热器121加热,外部物质诸如包含在从模塑框架52排出的气体中的硅等会附着到第一FAB260或第二FAB262。
下面详细描述去除污染的FAB的工艺。尽管参照了第一FAB260,但以下内容也可应用于第二FAB262。
图8示出当接合被外部物质污染的FAB时由夹置在第一FAB260与第一电极焊盘31或第二电极焊盘32之间的外部物质形成的界面270。界面270会降低第一电极焊盘31或第二电极焊盘32与第一FAB260之间的接合力。降低的接合力在完成引线接合工艺的过程中或之后进行的电测试、光学测试或接合强度测试中没有表现出来,但是会导致在产品被制造和被使用时当第一和第二连接部分61和62变得与第一电极焊盘31或第二电极焊盘32分离或与第一或第二端子部分22和23分离时发生越来越严重的缺陷,因此,这会极大地降低产品的可靠性。也就是,当在外部物质附着到第一FAB260的状态下进行接合工艺时,不发生电或光学的缺陷,产品的接合强度也可以没有缺陷。
外部物质是否附着到第一FAB260可以基于停止持续时间来确定。当工艺由于在工艺期间的错误而停止时,如果停止时间超过预定参考时间,则可以通过去除第一FAB260并制作新的FAB而重新开始引线接合工艺,从而可以防止由降低的接合力引起的缺陷。由外部物质引起的接合力的降低可以通过进行残余物测试来检验。例如,通过改变停止持续时间来研究在执行焊球剪切测试(BST)之后保留在电极焊盘上的引线的残余物的量。随着停止持续时间增加,电极焊盘上的引线的残余物减少。电极焊盘上引线的残余物越少,在产品被使用时第一FAB260变得与电极焊盘脱离的可能性越大。
表1示出当执行焊球接合时根据停止持续时间对阴极电极焊盘的残余物测试的实验结果,表2示出当执行焊球接合时根据停止持续时间对阳极电极焊盘的残余物测试的实验结果。在表1和表2中,B/H是接合的焊球的高度,B/S是接合的焊球的宽度,WPT是当引线环在向上方向拉动时的接合抵抗力。
[表1]
[表2]
如从表1和表2的以上结果可见,如果停止持续时间超过约5分钟,则残余物的量减少。通过反映上述实验结果,考虑到安全率,预定参考时间可以确定为约三分钟。当引线接合工艺由于错误而停止约三分钟或更长时,在引线接合工艺重新开始之前执行去除污染的第一FAB260的工艺。
图9是引线框架20的虚设区域410的截面图。参照图9,包括安装部分21以及第一和第二端子部分22和23的引线框架20通过例如压制金属板400而形成。引线框架20经由切边部分(trimming portion)24a、24b、24c和24d保持连接到金属板400。模塑框架10、52通过注塑成型而模塑在引线框架20上。在完成引线接合工艺之后,包括引线框架20和模塑框架10、52的封装主体54通过执行分割工艺而与金属板400分离。因此,由图9中的阴影指示的区域表示在执行分割工艺之后被丢弃的虚设区域410。
去除第一FAB260的工艺可以通过虚设接合工艺进行,在该工艺中第一FAB260被接合到引线框架20的虚设区域410并被去除。例如,如果在工艺管理人员或用户已经消除相应工艺停止的错误之后输入工艺重新开始命令,则控制器300控制引线接合装置100以降低固定单元130并将引线框架20固定在支撑块120上。此外,控制器300控制引线接合装置100以移动毛细管200到虚设区域410。
图10是示出在引线框架20的虚设区域410中执行虚设接合以去除被污染的第一FAB260的截面图。毛细管200在夹具210保持夹紧状态的状态下降低,并且在负载施加到第一FAB260并在第一FAB260上引起超声振动的状态下,附着有外部物质的第一FAB260接触虚设区域410并被接合到虚设区域410。当完成将第一FAB260接合到虚设区域410的工艺时,夹具210保持在夹紧状态并且毛细管200被升高。引线201被切断,从而第一FAB260从毛细管200去除。在引线201被切断之后,夹具210改变为释放状态,被进一步升高,尾部202类似于参照图6的描述形成在毛细管200的端部上。
在去除被外部物质污染的第一FAB260之后,通过以上参照图3至图7描述的工艺执行将第一和第二电极焊盘31和32通过第一和第二接合引线41和42连接到各自的第一和第二端子部分22和23的引线接合工艺。
遇必要时,可以在第一FAB260没有形成在毛细管200的端部上的情形下停止引线接合工艺。在此情形下,暴露到空气的尾部202会被外部物质污染。因此,当停止时间超过预定参考时间时,引线接合工艺可以在去除被污染的尾部202之后重新开始。被污染的尾部202可以通过在引线框架20的虚设区域410中执行虚设接合而去除。第一FAB260可以利用被污染的尾部202形成并被接合到虚设区域410。
如上所述,根据一个或多个示范性实施例,当停止的引线接合工艺和/或等待状态的持续时间超过预定参考时间时,暴露到空气的第一FAB260或尾部202在重新开始引线接合之前被去除,从而可以防止引线201的接合力的降低。
尽管已经描述了包括其中形成有空腔3的封装主体2或54的发光器件封装1的引线接合方法,但是示范性实施例不限于此。例如,发光器件封装1可以缺少空腔3或模塑框架10、52。此外,上述引线接合方法可以应用到其他类型的电路器件例如存储器芯片等。
图11示出根据示范性实施例的接合方法。在操作550中,封装主体54被对准在支撑块120上。在操作552中,固定单元130被降低到固定位置58并且引线框架20变得固定在支撑块120上。在操作554中,放电电极230接触引线201的端部并形成第一FAB260。在操作556中,毛细管200被降低到下部位置504并且第一FAB260被接合到第一电极焊盘31。
在操作558中,毛细管200被移动以形成环形接合引线。在操作560中,毛细管200降低并且引线201被接合到第一端子部分22。在操作562中,毛细管200升高并且引线201被切断。在操作564中,毛细管200被进一步升高到位置520以形成尾部202。在操作566中,放电电极230接触尾部202并且形成第二FAB262。在操作568中,毛细管200降低并且第二FAB262被接合到第二连接部分62。
在操作570中,确定是否检测到工艺错误。如果没有检测到工艺错误,则接合工艺对在支撑块上对准的随后的封装主体重复进行。如果检测到工艺错误,则在操作580中,控制器300停止接合装置。控制器300可以在操作582中进一步提升固定单元130,使得用户能够消除错误。
图12示出根据示范性实施例当检测到错误时的接合方法。在操作600中,执行接合方法。在操作602中,如上所述检测到错误。在操作604中,控制器300停止接合工艺使得用户能够消除该错误。在操作606中,计时器开始以测量在停止接合工艺时的停止持续时间。在操作607中,确定该错误是否被去除。如果错误被去除,则在操作608中确定计时器的值是否超过参考时间值。如果计时器的值没有超过参考时间值,则重新开始接合工艺。如果计时器的值超过参考时间值,则在操作610中去除被污染的引线部分诸如被污染的FAB,并在操作612中重新开始接合工艺。
图13更详细地示出去除被污染的引线部分诸如被污染的FAB的工艺。在操作620中,确定固定单元是否被控制器升高到释放位置59。如果确定固定单元处于释放位置,则在操作632中,控制器300控制固定单元130以使其降低从而将引线框架20与安装在支撑块120上的封装主体54固定。在操作634中,控制器300控制毛细管200以使其移动到虚设区域410,以去除被污染的FAB。在操作636中,毛细管200被降低,从而附着有外部物质的FAB与虚设区域410接触。在操作638中,被污染的FAB接合到虚设区域410。在操作640中,毛细管200被升高并且引线201被切断,从而去除被污染的FAB或从毛细管200的端部去除被污染的引线部分。在操作612中,接合工艺重新开始并根据上述工艺执行。
上述示范性实施例和优点仅是示范性的,而不应被解释为进行限制。本教导可以容易地应用到其他类型的装置。示范性实施例的描述旨在进行说明,而不是限制权利要求的范围,许多替换、修改和变化对于本领域技术人员将是明显的。对每个实施例内的特征或方面的描述应当通常被认为可应用于其他实施例中的其他类似特征或方面。
本申请要求于2012年1月30日在韩国知识产权局提交的韩国专利申请No.10-2012-0009206的优先权,其公开内容通过引用整体结合于此。
Claims (17)
1.一种用于电路器件的引线接合方法,该引线接合方法包括:
在毛细管的操作停止时检测停止持续时间;
如果所述停止持续时间超过参考时间,则去除在所述毛细管的端部处的引线上形成的被污染的无空气焊球(FAB);以及
形成新的无空气焊球并重新开始引线接合工艺。
2.如权利要求1所述的引线接合方法,其中所述电路器件被安装在引线框架上,去除被污染的无空气焊球包括:
移动所述毛细管到所述引线框架的虚设区域,该虚设区域是不同于其上安装所述电路器件的区域的区域;以及
将被污染的无空气焊球接合到所述虚设区域。
3.如权利要求1所述的引线接合方法,其中所述电路器件被安装在引线框架上,该方法还包括:
如果所述停止持续时间超过所述参考时间,则释放固定单元,该固定单元将所述引线框架固定在支撑块上。
4.如权利要求3所述的引线接合方法,还包括:
在去除被污染的无空气焊球之后通过降低所述固定单元将所述引线框架再次固定在所述支撑块上;以及
重新开始所述接合工艺。
5.如权利要求1所述的引线接合方法,其中所述参考时间为约三分钟。
6.一种用于安装在引线框架上的电路器件的引线接合方法,该引线接合方法包括:
如果引线接合装置的操作由于错误而停止,则释放固定单元,该固定单元将所述引线框架固定在支撑块上;
从所述引线接合装置停止时计算停止持续时间直到所述错误被消除;
如果停止持续时间超过参考时间,则在所述引线框架的虚设区域中执行虚设接合;以及
重新开始引线接合工艺。
7.如权利要求6所述的引线接合方法,其中所述重新开始包括:
通过降低所述固定单元将所述引线框架再次固定在所述支撑块上;以及
重新开始所述引线接合工艺。
8.如权利要求6所述的引线接合方法,其中毛细管供应要被接合的引线,如果所述引线接合装置的操作在无空气焊球(FAB)形成在所述毛细管的末端处的引线上的状态下停止,则执行所述虚设接合包括将所述无空气焊球接合到所述虚设区域。
9.如权利要求6所述的引线接合方法,其中如果所述引线接合装置的操作在无空气焊球没有形成在毛细管的末端上的状态下停止,则执行所述虚设接合包括在无空气焊球形成在所述毛细管的末端处的引线上之后接合无空气焊球(FAB)到所述虚设区域。
10.如权利要求6所述的引线接合方法,其中所述参考时间为约三分钟。
11.一种引线接合方法,包括:
在通过经由毛细管供应引线而执行引线接合工艺时检测错误;
停止所述引线接合工艺以消除所检测的错误;
确定所述引线接合工艺的空闲状态的停止持续时间是否超过参考时间;
如果停止持续时间超过所述参考时间,则从所述毛细管去除被污染的引线部分,并在被污染的引线部分被去除之后重新开始所述引线接合工艺;以及
如果所述停止持续时间小于或等于所述参考时间,则继续所述引线接合工艺。
12.如权利要求11所述的引线接合方法,其中所述确定包括:
从所述引线接合工艺停止时检测所述停止持续时间直到所述错误被消除。
13.如权利要求11所述的引线接合方法,其中所述引线接合工艺在被安装到引线框架的电路器件中进行,该引线框架通过固定单元固定;以及
所述停止包括将所述固定单元升高以释放所述引线框架。
14.如权利要求13所述的引线接合方法,其中去除被污染的引线部分包括:
降低所述固定单元以再次固定所述电路器件和所述引线框架;
将毛细管移动到所述引线框架的虚设区域,该虚设区域是不同于其上安装电路器件的区域的区域;以及
将被污染的引线部分接合到所述虚设区域。
15.如权利要求14所述的引线接合方法,还包括:
升高所述毛细管;以及
将接合到所述虚设区域的被污染的引线部分与所述毛细管中的引线切断。
16.如权利要求14所述的引线接合方法,其中所述被污染的引线部分包括在从所述毛细管延伸的引线部分上通过放电工艺形成的无空气焊球(FAB),并且
所述接合包括将所述无空气焊球接合到所述虚设区域。
17.如权利要求14所述的引线接合方法,还包括:
在将所述毛细管移动到所述虚设区域之前,通过在从所述毛细管延伸的被污染的引线部分上的放电工艺来形成无空气焊球(FAB);以及
将所述无空气焊球接合到所述虚设区域。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120009206A KR101620351B1 (ko) | 2012-01-30 | 2012-01-30 | 회로소자의 와이어 본딩 방법 |
KR10-2012-0009206 | 2012-01-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103227120A true CN103227120A (zh) | 2013-07-31 |
CN103227120B CN103227120B (zh) | 2017-03-01 |
Family
ID=48783686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310036802.3A Expired - Fee Related CN103227120B (zh) | 2012-01-30 | 2013-01-30 | 用于电路器件的引线接合方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8893953B2 (zh) |
KR (1) | KR101620351B1 (zh) |
CN (1) | CN103227120B (zh) |
DE (1) | DE102012112957A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011118172A1 (ja) * | 2010-03-24 | 2011-09-29 | パナソニック株式会社 | レーザ溶接方法およびレーザ溶接装置 |
JP2015114242A (ja) * | 2013-12-12 | 2015-06-22 | 株式会社新川 | ワイヤボンディングの検査方法及びワイヤボンディングの検査装置 |
JP6680239B2 (ja) * | 2017-02-20 | 2020-04-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP7045891B2 (ja) | 2018-03-20 | 2022-04-01 | キオクシア株式会社 | 半導体製造方法、半導体製造装置及び半導体装置 |
CN117413238A (zh) | 2021-07-19 | 2024-01-16 | 萨思学会有限公司 | 使用工艺数据的质量预测 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4707579A (en) * | 1987-02-24 | 1987-11-17 | Rockwell International Corporation | Real-time tail length monitor for wire bonding flame-off apparatus |
GB8826488D0 (en) * | 1988-11-11 | 1988-12-14 | Emhart Deutschland | Quality control for wire bonding |
US5443200A (en) * | 1993-10-13 | 1995-08-22 | Matsushita Electric Industrial Co., Ltd. | Bonding apparatus and bonding method |
US6572001B2 (en) | 2001-07-05 | 2003-06-03 | Asm Technology Singapore Pte Ltd. | Bonding system |
SG117395A1 (en) * | 2001-08-29 | 2005-12-29 | Micron Technology Inc | Wire bonded microelectronic device assemblies and methods of manufacturing same |
JP4106008B2 (ja) * | 2003-09-22 | 2008-06-25 | 株式会社新川 | ワイヤボンディング方法及び装置 |
US7085699B2 (en) | 2003-12-23 | 2006-08-01 | Texas Instruments Incorporated | Wire bonding simulation |
JP2005251919A (ja) * | 2004-03-03 | 2005-09-15 | Shinkawa Ltd | バンプボンディング装置及びバンプ不着検出方法 |
KR100598515B1 (ko) * | 2004-10-29 | 2006-07-10 | 기아자동차주식회사 | 차량용 통신기기 박스 구조 |
KR100643668B1 (ko) * | 2005-11-18 | 2006-11-10 | 이재춘 | 자동 환기팬 |
KR20070081226A (ko) | 2006-02-10 | 2007-08-16 | 삼성전자주식회사 | 절연된 와이어의 프리 에어 볼 형성 방법 |
US20070251980A1 (en) | 2006-04-26 | 2007-11-01 | Gillotti Gary S | Reduced oxidation system for wire bonding |
US20070262119A1 (en) * | 2006-05-09 | 2007-11-15 | Malliah Ramkumar | Wire bonding process for insulated wires |
JP4842109B2 (ja) | 2006-11-30 | 2011-12-21 | 株式会社カイジョー | フリーエアボールの形成方法及びワイヤボンディング装置 |
JP4625858B2 (ja) | 2008-09-10 | 2011-02-02 | 株式会社カイジョー | ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム |
US20110017806A1 (en) | 2009-07-21 | 2011-01-27 | Jerry Gomez Cayabyab | Forming gas kit design for copper bonding |
KR20120009206A (ko) | 2010-07-23 | 2012-02-01 | 주식회사 이우드코리아 | 허니콤 구조를 갖는 합성목재 압출물 |
US9455544B2 (en) * | 2010-08-10 | 2016-09-27 | Kulicke And Soffa Industries, Inc. | Wire loops, methods of forming wire loops, and related processes |
JP5662227B2 (ja) * | 2011-04-05 | 2015-01-28 | 株式会社新川 | ボンディング装置及びボンディングツールの洗浄方法 |
CN103107111B (zh) * | 2011-11-11 | 2017-03-01 | 飞思卡尔半导体公司 | 用于监测线接合中无空气球(fab)形成的方法和装置 |
-
2012
- 2012-01-30 KR KR1020120009206A patent/KR101620351B1/ko active IP Right Grant
- 2012-12-21 DE DE102012112957A patent/DE102012112957A1/de not_active Withdrawn
-
2013
- 2013-01-30 US US13/754,035 patent/US8893953B2/en not_active Expired - Fee Related
- 2013-01-30 CN CN201310036802.3A patent/CN103227120B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN103227120B (zh) | 2017-03-01 |
US8893953B2 (en) | 2014-11-25 |
KR101620351B1 (ko) | 2016-05-12 |
DE102012112957A1 (de) | 2013-08-01 |
US20130196452A1 (en) | 2013-08-01 |
KR20130087934A (ko) | 2013-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5251038B2 (ja) | 発光装置 | |
EP2197051B1 (en) | Light emitting device and method for manufacturing same | |
JP6496601B2 (ja) | 発光素子 | |
CN103227120A (zh) | 用于电路器件的引线接合方法 | |
US9337405B2 (en) | Light emitting device and method for manufacturing the same | |
JP4979299B2 (ja) | 光学装置及びその製造方法 | |
US9391050B2 (en) | Semiconductor light emitting device and fabrication method for same | |
JP4259198B2 (ja) | 発光装置用波長変換部の製造方法及び発光装置の製造方法 | |
EP2475018B1 (en) | Light-emitting device package and method of manufacturing the same | |
TW201015670A (en) | Ceramic package structure of high power light emitting diode and manufacturing method | |
KR20190025457A (ko) | 발광소자 패키지 및 광원 장치 | |
JP2013510422A (ja) | フリップチップledのためのシリコーンベースの反射性アンダーフィル及び熱カプラ | |
JP6131555B2 (ja) | 発光装置の封止部材の取り外し方法および封止部材を取り外すことが可能な発光装置 | |
JP2010135488A (ja) | 発光装置及びその製造方法 | |
CN102549785A (zh) | 发光装置 | |
JP2012080026A (ja) | Ledパッケージ | |
CN109244224A (zh) | 发光器件封装 | |
JP2016092419A (ja) | 発光装置 | |
JP6136717B2 (ja) | 発光素子、発光装置及び発光素子の製造方法 | |
KR20190031092A (ko) | 발광소자 패키지 및 광원 장치 | |
KR102407337B1 (ko) | 발광소자 패키지 및 조명 모듈 | |
JP6680239B2 (ja) | 発光装置の製造方法 | |
JP4367299B2 (ja) | 発光素子デバイス及び発光素子デバイスの製造方法 | |
JP6210211B2 (ja) | 発光装置の製造方法 | |
KR20190069152A (ko) | 발광소자 패키지 및 광원 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170301 Termination date: 20220130 |
|
CF01 | Termination of patent right due to non-payment of annual fee |