CN103187507A - 发光二极管封装结构 - Google Patents
发光二极管封装结构 Download PDFInfo
- Publication number
- CN103187507A CN103187507A CN2011104535219A CN201110453521A CN103187507A CN 103187507 A CN103187507 A CN 103187507A CN 2011104535219 A CN2011104535219 A CN 2011104535219A CN 201110453521 A CN201110453521 A CN 201110453521A CN 103187507 A CN103187507 A CN 103187507A
- Authority
- CN
- China
- Prior art keywords
- light
- led
- emitting diode
- package structure
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 18
- 230000000630 rising effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
一种发光二极管封装结构,包括基板、设置于基板上的电极、与所述电极电性连接的发光二极管芯片及封装层。在所述封装层内对应所述发光二极管芯片的正向出光路径上设置偏转部。该偏转部具有与所述封装层相接的入光面。该偏转部的折射率小于封装层的折射率,使得发光二极管芯片发出的部分光线在所述入光面处发生全反射,而射向偏转部周围的区域。
Description
技术领域
本发明涉及一种半导体封装结构,特别是指一种发光二极管封装结构。
背景技术
发光二极管做为第三代光源,具有体积小、节能环保、发光效率高等优点,得到越来越广泛的应用。而一般发光二极管封装结构往往是将一LED芯片封装于该封装结构的中心,但是这种封装结构的正向出光强度往往较高,而周围的出光强度较小,且只具有较小的出光角度。
发明内容
有鉴于此,有必要提供一种具有较大的出光角度的发光二极管封装结构。
一种发光二极管封装结构,包括基板、设置于基板上的电极、与所述电极电性连接的发光二极管芯片及封装层。在所述封装层内对应所述发光二极管芯片的正向出光路径上设置偏转部。该偏转部具有与所述封装层相接的入光面。该偏转部的折射率小于封装层的折射率,使得发光二极管芯片发出的部分光线在所述入光面处发生全反射,而射向偏转部周围的区域。
该发光二极管封装结构,由于在所述封装层内对应所述发光二极管芯片的正向出光路径上设置一偏转部,该偏转部具有一与所述封装层相接的入光面,该偏转部的折射率小于封装层的折射率,使得发光二极管芯片发出的部分光线在所述入光面处发生全反射,而射向偏转部周围的区域,因此增大了该发光二极管封装结构的出光角度。
附图说明
图1是本发明实施方式提供的一种发光二极管封装结构示意图。
图2是图1中的发光二极管封装结构的俯视图。
图3是图1中的发光二极管封装结构的出光线路示意图。
图4是图1中的发光二极管封装结构的光强与出光角度的关系图。
主要元件符号说明
发光二极管封装结构 | 10 |
基板 | 11 |
上表面 | 111 |
下表面 | 112 |
电极 | 12 |
发光二极管芯片 | 13 |
封装层 | 14 |
偏转部 | 15 |
入光面 | 151 |
出光面 | 152 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图1和图2,本发明实施方式提供的一种发光二极管封装结构10,包括基板11、电极12、发光二极管芯片13、封装层14及偏转部15。
基板11为一矩形平板,用以承载所述电极12、发光二极管芯片13和封装层14于其上。所述基板11包括上表面111和与上表面111相对且相互平行的下表面112。所述基板11材料为PPA(Polyphthalamide,聚醋酸乙烯酯)等绝缘材料。可以理解的,所述基板11各边的长度可以相同或不同,进一步的,所述基板11的形状并不限于矩形,其形状还可以为圆形等。
电极12形成于所述基板11的表面,该电极12至少为两个,且每个电极12之间相互电绝缘。所述电极12分别自所述基板11的上表面111延伸至下表面112。所述电极12所用的材料为导电性能较好的金属材料,如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。
发光二极管芯片13采用覆晶的方式固定于基板11表面的电极12上并与所述电极12电连接。可以理解的,该发光二极管芯片13也可以贴设于其中一个所述电极12上,然后再通过金属导线与所述电极12分别电性连接。
封装层14形成于所述基板11的上表面111上,覆盖所述电极12位于所述上表面111的部分,并包覆所述发光二极管芯片13。所述封装层14由封装胶固化形成。
偏转部15设置于所述封装层14内对应所述发光二极管芯片13的正向出光路径上,该偏转部15具有一与所述封装层14相接的入光面151及一与该入光面151相对设置的出光面152,该入光面151为一个向基板11方向弯曲的曲面,该入光面151的曲率半径大于所述发光二极管芯片13的尺寸。所述偏转部15位于发光二极管芯片13正上方。如图3所示,该偏转部15所用材料的折射率小于封装层14所用材料的折射率,使得发光二极管芯片13发出的部分光线在所述入光面151处发生全反射,而射向所述偏转部15周围的区域,从而增大该发光二极管封装结构10的出光角度。本实施例中,所述出光面152为粗糙表面,避免在该出光面152处形成二次全反射,导致进入该偏转部15的光线也不能出射,从而进一步增加光线出射的路径,避免所述发光二极管芯片13的正向出光方向的光强被过度减弱,从而提升该发光二极管封装结构10的出光效率。定义发光二极管封装结构10所发出的光线相对于其光轴的夹角为出光角度。如图4所示,具有所述偏转部15的发光二极管封装结构10在出光角度小于60度的区域内光强被减弱,在出光角度约为70度的附近一段区域达到最大的出光强度,继续增大出光角度光强迅速下降。
本发明实施方式提供的发光二极管封装结构10,由于在所述封装层14内对应所述发光二极管芯片13的正向出光路径上设置一偏转部15,该偏转部15具有一与所述封装层14相接的入光面151,该偏转部15的折射率小于封装层14的折射率,使得发光二极管芯片13发出的部分光线在所述入光面151处发生全反射,而射向偏转部15周围的区域,因此增大了该发光二极管封装结构10的出光角度。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种发光二极管封装结构,包括基板、设置于基板上的电极、与所述电极电性连接的发光二极管芯片及封装层,其特征在于,在所述封装层内对应所述发光二极管芯片的正向出光路径上设置偏转部,该偏转部具有与所述封装层相接的入光面,该偏转部的折射率小于封装层的折射率,使得发光二极管芯片发出的部分光线在所述入光面处发生全反射,而射向偏转部周围的区域。
2.如权利要求1所述的发光二极管封装结构,其特征在于:所述入光面为一个向基板方向弯曲的曲面。
3.如权利要求1所述的发光二极管封装结构,其特征在于:所述偏转部具有一与所述入光面相对设置的出光面,该出光面为粗糙表面。
4.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:所述电极所用的材料为金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。
5.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:所述发光二极管芯片采用覆晶的方式固定于基板表面的电极上。
6.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:所述封装层由封装胶固化形成。
7.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:所述基板材料为PPA。
8.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:所述偏转部位于发光二极管芯片正上方。
9.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:发光二极管的光强在出光角度为70度附近最大。
10.如权利要求1至3任一项所述的发光二极管封装结构,其特征在于:该入光面的曲率半径大于所述发光二极管芯片的尺寸。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011104535219A CN103187507A (zh) | 2011-12-30 | 2011-12-30 | 发光二极管封装结构 |
TW101100476A TWI464919B (zh) | 2011-12-30 | 2012-01-05 | 發光二極體封裝結構 |
US13/600,133 US20130168713A1 (en) | 2011-12-30 | 2012-08-30 | Led device having uniform distribution of light intensity of light filed |
JP2012282448A JP2013140968A (ja) | 2011-12-30 | 2012-12-26 | 発光ダイオードパッケージ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011104535219A CN103187507A (zh) | 2011-12-30 | 2011-12-30 | 发光二极管封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103187507A true CN103187507A (zh) | 2013-07-03 |
Family
ID=48678580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011104535219A Pending CN103187507A (zh) | 2011-12-30 | 2011-12-30 | 发光二极管封装结构 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130168713A1 (zh) |
JP (1) | JP2013140968A (zh) |
CN (1) | CN103187507A (zh) |
TW (1) | TWI464919B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810453A (zh) * | 2014-01-27 | 2015-07-29 | 株式会社迪思科 | 光器件及光器件的加工方法 |
CN109117708A (zh) * | 2017-06-22 | 2019-01-01 | 曦威科技股份有限公司 | 指纹辨识装置以及使用其的移动装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201513630A (zh) * | 2013-09-30 | 2015-04-01 | Hon Hai Prec Ind Co Ltd | 手機 |
JP6582382B2 (ja) * | 2014-09-26 | 2019-10-02 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040046222A1 (en) * | 2000-07-21 | 2004-03-11 | Yoshifumi Nagai | Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture |
US20050072981A1 (en) * | 2002-02-19 | 2005-04-07 | Ryoma Suenaga | Light-emitting device and process for producing thereof |
US7193365B2 (en) * | 2002-02-08 | 2007-03-20 | Citizens Electronics Co., Ltd. | High-intensity light emitting diode with concave and convex shaped light scattering portions formed on a cover |
JP2010062305A (ja) * | 2008-09-03 | 2010-03-18 | Hitachi Displays Ltd | 照明装置、及び液晶表示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583447B2 (en) * | 2001-08-27 | 2003-06-24 | Harvatek Corp. | Multiple LED chip package |
JP5082427B2 (ja) * | 2005-12-26 | 2012-11-28 | 東芝ライテック株式会社 | 発光装置 |
JP4952884B2 (ja) * | 2006-01-24 | 2012-06-13 | ソニー株式会社 | 半導体発光装置および半導体発光装置組立体 |
JP5028562B2 (ja) * | 2006-12-11 | 2012-09-19 | 株式会社ジャパンディスプレイイースト | 照明装置及びこの照明装置を用いた表示装置 |
JP5343370B2 (ja) * | 2008-03-04 | 2013-11-13 | 株式会社リコー | 光走査装置及び画像形成装置 |
TWI364858B (en) * | 2008-06-19 | 2012-05-21 | Silitek Electronic Guangzhou | Photoelectric semiconductor device capable of generating uniform compound lights |
-
2011
- 2011-12-30 CN CN2011104535219A patent/CN103187507A/zh active Pending
-
2012
- 2012-01-05 TW TW101100476A patent/TWI464919B/zh not_active IP Right Cessation
- 2012-08-30 US US13/600,133 patent/US20130168713A1/en not_active Abandoned
- 2012-12-26 JP JP2012282448A patent/JP2013140968A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040046222A1 (en) * | 2000-07-21 | 2004-03-11 | Yoshifumi Nagai | Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture |
US7193365B2 (en) * | 2002-02-08 | 2007-03-20 | Citizens Electronics Co., Ltd. | High-intensity light emitting diode with concave and convex shaped light scattering portions formed on a cover |
US20050072981A1 (en) * | 2002-02-19 | 2005-04-07 | Ryoma Suenaga | Light-emitting device and process for producing thereof |
JP2010062305A (ja) * | 2008-09-03 | 2010-03-18 | Hitachi Displays Ltd | 照明装置、及び液晶表示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810453A (zh) * | 2014-01-27 | 2015-07-29 | 株式会社迪思科 | 光器件及光器件的加工方法 |
CN109117708A (zh) * | 2017-06-22 | 2019-01-01 | 曦威科技股份有限公司 | 指纹辨识装置以及使用其的移动装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201327928A (zh) | 2013-07-01 |
JP2013140968A (ja) | 2013-07-18 |
TWI464919B (zh) | 2014-12-11 |
US20130168713A1 (en) | 2013-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI462353B (zh) | 發光二極體封裝結構及發光裝置 | |
TWI418063B (zh) | 發光二極體封裝結構及其製造方法 | |
JP4751897B2 (ja) | 放熱基板を具えた発光ダイオード装置及びその製造方法 | |
US10217918B2 (en) | Light-emitting element package | |
CN103187408B (zh) | 发光二极管封装结构 | |
TWI463702B (zh) | 發光二極體光源 | |
CN102650388A (zh) | 照明设备 | |
CN106356441A (zh) | 发光二极管封装结构 | |
CN102185091A (zh) | 一种发光二极管器件及其制造方法 | |
CN103187507A (zh) | 发光二极管封装结构 | |
US20120175646A1 (en) | Light emitting diode module | |
US8373189B2 (en) | Light emitting diode package | |
CN103165798B (zh) | 发光二极管封装结构及其透镜 | |
TWI474521B (zh) | 發光二極體封裝結構 | |
CN202758885U (zh) | 发光二极管模组封装结构 | |
US20140001500A1 (en) | Led light bar | |
TWI688128B (zh) | 發光二極體晶片級封裝結構及直下式背光模組 | |
CN201893369U (zh) | 一种发光二极管 | |
CN104979441A (zh) | 一种led芯片及其制作方法及led显示装置 | |
CN103178186A (zh) | 发光二极管封装结构 | |
CN202758930U (zh) | 发光二极管封装结构 | |
JP2012156409A (ja) | バックライト用発光装置 | |
CN102931329B (zh) | 发光二极管封装结构 | |
CN202758887U (zh) | 发光二极管模组封装结构 | |
KR101433734B1 (ko) | 엘이디 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130703 |