CN103187344A - 基质盘 - Google Patents

基质盘 Download PDF

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CN103187344A
CN103187344A CN201210537437XA CN201210537437A CN103187344A CN 103187344 A CN103187344 A CN 103187344A CN 201210537437X A CN201210537437X A CN 201210537437XA CN 201210537437 A CN201210537437 A CN 201210537437A CN 103187344 A CN103187344 A CN 103187344A
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matrix
dish
matrix dish
adsorption site
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普瑞米恩·马夫勒
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SOLAR SEMI GmbH
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    • D21—PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21F—PAPER-MAKING MACHINES; METHODS OF PRODUCING PAPER THEREON
    • D21F1/00—Wet end of machines for making continuous webs of paper
    • D21F1/36—Guiding mechanisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • D—TEXTILES; PAPER
    • D21—PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21G—CALENDERS; ACCESSORIES FOR PAPER-MAKING MACHINES
    • D21G1/00—Calenders; Smoothing apparatus
    • D—TEXTILES; PAPER
    • D21—PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21G—CALENDERS; ACCESSORIES FOR PAPER-MAKING MACHINES
    • D21G1/00—Calenders; Smoothing apparatus
    • D21G1/0066—Calenders; Smoothing apparatus using a special calendering belt
    • D—TEXTILES; PAPER
    • D21—PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21G—CALENDERS; ACCESSORIES FOR PAPER-MAKING MACHINES
    • D21G1/00—Calenders; Smoothing apparatus
    • D21G1/02—Rolls; Their bearings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders

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Abstract

本发明涉及一种基质盘。一种用于容纳基质(2)的基质盘（1），其应在表面上具有吸附点(5)。

Description

基质盘
技术领域
本发明涉及一种根据权利要求1的前序部分所述的基质盘以及一种根据权利要求9的前序部分所述的应用。
背景技术
为了对基质进行加工，尤其进行涂漆和/或涂层，大多应用具有旋转盘和基质盘的装置。在旋转盘之下布置有驱动部，该驱动部通过旋转轴使旋转盘以及基质盘旋转地运动。
例如，文件EP 1 743 220 B1公开了这种装置，然而在其中未公开如何将基质保持在基质盘上。
已知的保持方法具有的缺点为，可损坏基质的已经涂漆的和/或涂层的表面。这对于应两侧地涂漆和/或涂层的基质是尤其不利的。此外不利的是，向下指向的还应在稍后的工作过程中涂漆和/或涂层的基质面可在对另一侧涂漆和/或涂层时已经受到溅射。
发明内容
本发明的目的为，提供一种基质盘，其使上述缺点最小化或者甚至消除上述缺点，并且在此尽可能无问题地得到待涂漆的基质面的下侧。
该目的通过权利要求1所述的特征以及权利要求9所述的特征实现。
在典型的实施例中，用于容纳基质的基质盘在其表面处包括吸附点。由此得到的优点为，基质通过吸附点被吸住并且由此能够可靠地保持在基质盘上。在基质盘旋转、加速和制动时也不存在基质落下的风险。通过由吸附点施加保持力而得到的优点为，至少使通过保持元件、夹具、夹子或类似者引起的损坏风险最小化。
在典型的实施例中，吸附点具有与基质盘的表面的间距。由此得到的优点为，基质盘仅与吸附点接触，由此仅产生少量的可导致损坏的接触面。
优选地，吸附点与基质盘的表面的间距为1mm至30mm，优选为7mm。由此得到的优点为，实现足够的间距，但形成吸附点的小管还具有足够的稳定性。
在典型的实施例中，基质盘包括多个吸附点。由此得到的优点为，基质盘能可靠地被保持在平面中并且不可倾覆。此外有利的是，通过多个吸附点在每个吸附点处仅需要更小的保持力。因此在基质盘或吸附点处仅施加小的负压就足够了。
在典型的实施例中，基质盘包括三个、四个或五个吸附点。这是尤其有利的，因为由此基质盘可靠地被保持并且不会出现长的管路。
在典型的实施例中，吸附点通过通道与负压源相连接。由此得到的优点为，可将负压施加到吸附点处，由此产生保持力。
在典型的实施例中，通道布置在基质盘中。优选地，通道布置在基质盘的板中。由此得到的优点为，不必设置附加的管路或软管。这是尤其有利的，因为基质盘以高速旋转。
在典型的实施例中，通道被铣入基质盘的表面中或基质盘的板中。由此得到的优点为，可通过非常简单的方式制造该通道或多个通道。
在典型的实施例中，分别将锁紧件插入所应用的凹处中，以用于锁闭通道。以这种方式保持通道空着。这是尤其有利的，因为由此非常简化了通道的制造，并且不需要钻长孔。
在典型的实施例中，吸附点包括柔性的表面。由此得到的优点为，吸附点在与基质接触的部位处不具有可能导致基质损坏的硬棱边。优选地，吸附点包括形成柔性的表面的橡胶唇。
对于在对基质旋转涂漆的装置中应用基质盘，独立地要求保护。由此得到的优点为，基质能可靠地保持在用于旋转涂漆和/或涂层的装置中。此外，通过形成吸附点以保护后侧的方式保持基质。
在典型的实施例中，用于旋转涂漆的装置的内部区域相对于大气被封闭。由此得到的优点为，在基质和基质盘之间形成一起旋转的空气柱，或强化该效应。由此防止，漆或涂层介质到达可能稍后才应被涂漆和/或涂层的基质的后侧上。
附图说明
下面根据附图简要描述本发明，其中，在各附图中示出：
图1显示了带有基质的根据本发明的基质盘的侧视图的示意性图示；
图2显示了根据本发明的基质盘的俯视图的示意性图示。
具体实施方式
图1显示了带有基质2的根据本发明的基质盘1。该基质盘1包括板3、联接部4和四个吸附点5、6、7和8。
在该实施例中，基质2和板3分别构造成圆盘。
在其它未示出的实施例中，使用矩形的、正方形的或三角形的形状的板。原则上，所有板形状适合用于所有基质形状。仅吸附点的布置方案是重要的。
吸附点5、6、7和8中的每一个与板3的表面9具有间距A。由此得到的优点为，基质2与基质盘1仅形成很少的支承点。由此减小了可导致表面或覆层损坏的接触点的数量。
吸附点5、6、7和8中的每一个通过通道10,11,12和13与未示出的压缩空气源相连接。该压缩空气源优选地在联接部4处与通道10,11,12和13相连接。
吸附点5、6、7和8分别具有小管15。小管15的长度确定吸附点5、6、7和8或基质2与板3的表面9的间距A。
小管15包括脚部16。小管15通过该脚部16分别固定在板3上。如可在图2中看出的那样，脚部16优选地通过螺栓17被旋拧到板3上。
吸附点5、6、7和8中的每一个具有柔性表面。在该实施例中，该柔性表面分别通过橡胶唇14形成。此外，该橡胶唇14延伸到小管15的上部棱边上，从而孔18保持空着。
优选地，通道10、11、12和13从板3的表面9起被铣入板3中。如可在图2中看出的，通道10、11、12和13分别通过锁紧件19、20、21和22被锁闭。由此得到的优点为，能以简单的方式制造该通道。
本发明的工作原理如下：
优选地，基质盘1被应用在用于对基质旋转涂漆的装置中。此外，基质盘1联接到负压源上。
之后，将基质2放置到吸附点5、6、7和8上。通过施加的负压，在旋转时也可靠地保持基质2。通过吸附点5、6、7和8的少的数量和小的尺寸防止，损坏可能已经被涂层的后侧23。这对于应双侧地被涂层的基质2是特别有利的。
通过在相对于大气封闭的用于涂漆的装置中使用根据本发明的基质盘1而得到的优点为，在基质2和板3之间的区域中产生一起旋转的空气柱。由此防止，漆或涂层材料渗入到在板3和基质2之间的区域中。由此避免溅到基质2的后侧上。
在对基质2的上侧涂漆和/或涂层之后切断负压源，从而可利用操作单元将基质2从基质盘1处取下。之后，使基质2翻转，使得在图1中示出的后侧23向上指向并且放置到吸附点5、6、7和8上。
现在，再次接通负压源，由此再次将基质2可靠地保持在吸附点5、6、7和8上。
为了对现在位于上方的基质1的后侧23涂层和/或涂漆而使基质盘1旋转。如已经描述的那样，这对于现在位于下方的已经被涂层的上侧是非常安全的。一方面存在少量的可损坏覆层的接触部位。另一方面，通过一起旋转的空气柱防止，在第二涂层和/或涂漆过程中飞溅物到达现在位于下方的、已经被涂层的、指向板3的基质的侧。
参考标号列表
1 基质盘
2 基质
3 板
4 联接部
5 吸附点
6 吸附点
7 吸附点
8 吸附点
9 表面
10 通道
11 通道
12 通道
13 通道
14 橡胶唇
15 小管
16 脚部
17 螺栓
18 孔
19 锁紧件
20 锁紧件
21 锁紧件
22 锁紧件
23 后侧

Claims (10)

1.一种在用于对基质(2)涂漆的装置中用于容纳所述基质(2)的基质盘(1)，其特征在于，所述基质盘(1)在表面处具有吸附点(5)。
2.根据权利要求1所述的基质盘，其特征在于，所述吸附点(5)与所述基质盘(1)的表面具有间距(A)。
3.根据前述权利要求中任一项所述的基质盘，其特征在于，所述基质盘(1)包括多个吸附点(5,6,7,8)。
4.根据权利要求3所述的基质盘，其特征在于，所述基质盘(1)包括四个吸附点(5,6,7,8)。
5.根据前述权利要求中任一项所述的基质盘，其特征在于，所述吸附点(5,6,7,8)通过通道(10,11,12,13)与负压源相连接。
6.根据前述权利要求中任一项所述的基质盘，其特征在于，所述通道(10,11,12,13)布置在所述基质盘(1)中。
7.根据前述权利要求中任一项所述的基质盘，其特征在于，所述通道(10,11,12,13)被铣入所述基质盘(1)的表面中并且通过锁紧件(19,20,21,22)锁闭。
8.根据前述权利要求中任一项所述的基质盘，其特征在于，所述吸附点(5,6,7,8)包括柔性表面。
9.一种根据前述权利要求中任一项所述的基质盘(1)在用于对基质(2)旋转涂漆的装置中的应用。
10.根据权利要求9所述的应用，其特征在于，所述用于旋转涂漆的装置的内部区域相对于大气被封闭。
CN201210537437XA 2012-01-03 2012-12-12 基质盘 Pending CN103187344A (zh)

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KR20130079991A (ko) 2013-07-11
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RU2012155091A (ru) 2014-07-10
US20130189439A1 (en) 2013-07-25
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TWI621198B (zh) 2018-04-11
SG191493A1 (en) 2013-07-31

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