CN103155120B - 感应加热装置 - Google Patents
感应加热装置 Download PDFInfo
- Publication number
- CN103155120B CN103155120B CN201180046790.1A CN201180046790A CN103155120B CN 103155120 B CN103155120 B CN 103155120B CN 201180046790 A CN201180046790 A CN 201180046790A CN 103155120 B CN103155120 B CN 103155120B
- Authority
- CN
- China
- Prior art keywords
- magnetic pole
- induction heating
- load coil
- heating equipment
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 101
- 230000006698 induction Effects 0.000 title claims abstract description 65
- 238000002834 transmittance Methods 0.000 claims abstract description 37
- 239000000498 cooling water Substances 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 2
- 230000004907 flux Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000005755 formation reaction Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 8
- 230000005284 excitation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium Chemical class 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011080553A JP4980475B1 (ja) | 2011-03-31 | 2011-03-31 | 誘導加熱装置 |
JP2011-080553 | 2011-03-31 | ||
PCT/JP2011/074171 WO2012132077A1 (ja) | 2011-03-31 | 2011-10-20 | 誘導加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103155120A CN103155120A (zh) | 2013-06-12 |
CN103155120B true CN103155120B (zh) | 2015-10-21 |
Family
ID=46678907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180046790.1A Active CN103155120B (zh) | 2011-03-31 | 2011-10-20 | 感应加热装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4980475B1 (zh) |
KR (1) | KR101309385B1 (zh) |
CN (1) | CN103155120B (zh) |
WO (1) | WO2012132077A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200015535A (ko) | 2017-05-10 | 2020-02-12 | 쉐인 토마스 맥마흔 | 박막 결정화 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1035252A (zh) * | 1988-04-22 | 1989-09-06 | 谭言毅 | 用作分离或过滤的磁装置 |
CN1327627A (zh) * | 1999-10-28 | 2001-12-19 | 沙迪克株式会社 | 直线电动机的线圈组合体及其制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1215444B (it) * | 1987-04-24 | 1990-02-14 | L P E S P A | Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. |
JPH03241733A (ja) * | 1990-02-20 | 1991-10-28 | Fujitsu Ltd | 気体成長装置 |
JP3363239B2 (ja) * | 1994-03-23 | 2003-01-08 | 三菱電機株式会社 | 電磁誘導加熱装置 |
JP4402860B2 (ja) * | 2001-03-28 | 2010-01-20 | 忠弘 大見 | プラズマ処理装置 |
EP1271620B1 (en) * | 2001-06-21 | 2013-05-29 | Hyoung June Kim | Method and apparatus for heat treatment of semiconductor films |
JP2005276527A (ja) * | 2004-03-23 | 2005-10-06 | Mitsui Eng & Shipbuild Co Ltd | 誘導加熱装置 |
KR100621698B1 (ko) | 2004-11-01 | 2006-09-19 | 삼성전자주식회사 | 유도결합 플라즈마 처리장치 |
JP2008226857A (ja) * | 2008-05-16 | 2008-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP5213594B2 (ja) * | 2008-09-04 | 2013-06-19 | 東京エレクトロン株式会社 | 熱処理装置 |
JP5461040B2 (ja) * | 2009-03-23 | 2014-04-02 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP4676567B1 (ja) * | 2010-07-20 | 2011-04-27 | 三井造船株式会社 | 半導体基板熱処理装置 |
-
2011
- 2011-03-31 JP JP2011080553A patent/JP4980475B1/ja active Active
- 2011-10-20 WO PCT/JP2011/074171 patent/WO2012132077A1/ja active Application Filing
- 2011-10-20 KR KR1020137007418A patent/KR101309385B1/ko active IP Right Grant
- 2011-10-20 CN CN201180046790.1A patent/CN103155120B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1035252A (zh) * | 1988-04-22 | 1989-09-06 | 谭言毅 | 用作分离或过滤的磁装置 |
CN1327627A (zh) * | 1999-10-28 | 2001-12-19 | 沙迪克株式会社 | 直线电动机的线圈组合体及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4980475B1 (ja) | 2012-07-18 |
WO2012132077A1 (ja) | 2012-10-04 |
KR101309385B1 (ko) | 2013-09-17 |
JP2012216659A (ja) | 2012-11-08 |
KR20130037231A (ko) | 2013-04-15 |
CN103155120A (zh) | 2013-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Mitsui AIS Corp. Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181108 Address after: Tokyo, Japan Patentee after: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Address before: Tokyo, Japan Patentee before: Mitsui AIS Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240306 Address after: Tokyo, Japan Patentee after: Mitsui Yiaisi Co.,Ltd. Country or region after: Japan Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Country or region before: Japan |