JP4980475B1 - 誘導加熱装置 - Google Patents
誘導加熱装置 Download PDFInfo
- Publication number
- JP4980475B1 JP4980475B1 JP2011080553A JP2011080553A JP4980475B1 JP 4980475 B1 JP4980475 B1 JP 4980475B1 JP 2011080553 A JP2011080553 A JP 2011080553A JP 2011080553 A JP2011080553 A JP 2011080553A JP 4980475 B1 JP4980475 B1 JP 4980475B1
- Authority
- JP
- Japan
- Prior art keywords
- induction heating
- cooling
- chamber
- magnetic pole
- magnetically permeable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 147
- 230000006698 induction Effects 0.000 title claims abstract description 126
- 238000001816 cooling Methods 0.000 claims abstract description 71
- 239000003507 refrigerant Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000002265 prevention Effects 0.000 abstract description 3
- 230000004907 flux Effects 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000035699 permeability Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Induction Heating (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011080553A JP4980475B1 (ja) | 2011-03-31 | 2011-03-31 | 誘導加熱装置 |
KR1020137007418A KR101309385B1 (ko) | 2011-03-31 | 2011-10-20 | 유도가열장치 |
CN201180046790.1A CN103155120B (zh) | 2011-03-31 | 2011-10-20 | 感应加热装置 |
PCT/JP2011/074171 WO2012132077A1 (ja) | 2011-03-31 | 2011-10-20 | 誘導加熱装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011080553A JP4980475B1 (ja) | 2011-03-31 | 2011-03-31 | 誘導加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4980475B1 true JP4980475B1 (ja) | 2012-07-18 |
JP2012216659A JP2012216659A (ja) | 2012-11-08 |
Family
ID=46678907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011080553A Active JP4980475B1 (ja) | 2011-03-31 | 2011-03-31 | 誘導加熱装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4980475B1 (zh) |
KR (1) | KR101309385B1 (zh) |
CN (1) | CN103155120B (zh) |
WO (1) | WO2012132077A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020520129A (ja) | 2017-05-10 | 2020-07-02 | マクマホン, シェーン トマスMCMAHON, Shane Thomas | 薄膜結晶化プロセス |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63284810A (ja) * | 1987-04-24 | 1988-11-22 | エルピーイー・ソチエタ・ペル・アチオニ | エピタキシヤル反応炉 |
JPH03241733A (ja) * | 1990-02-20 | 1991-10-28 | Fujitsu Ltd | 気体成長装置 |
JP2002355550A (ja) * | 2001-03-28 | 2002-12-10 | Tadahiro Omi | プラズマ処理装置、プラズマ処理方法及び遅波板 |
JP2003007638A (ja) * | 2001-06-21 | 2003-01-10 | June Kim Hyoung | 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置 |
JP2005276527A (ja) * | 2004-03-23 | 2005-10-06 | Mitsui Eng & Shipbuild Co Ltd | 誘導加熱装置 |
JP2008226857A (ja) * | 2008-05-16 | 2008-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP2010059490A (ja) * | 2008-09-04 | 2010-03-18 | Tokyo Electron Ltd | 熱処理装置 |
JP2010225396A (ja) * | 2009-03-23 | 2010-10-07 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1035252A (zh) * | 1988-04-22 | 1989-09-06 | 谭言毅 | 用作分离或过滤的磁装置 |
JP3363239B2 (ja) * | 1994-03-23 | 2003-01-08 | 三菱電機株式会社 | 電磁誘導加熱装置 |
JP3643273B2 (ja) * | 1999-10-28 | 2005-04-27 | 株式会社ソディック | リニアモータのコイル装置およびその製造方法 |
KR100621698B1 (ko) | 2004-11-01 | 2006-09-19 | 삼성전자주식회사 | 유도결합 플라즈마 처리장치 |
JP4676567B1 (ja) * | 2010-07-20 | 2011-04-27 | 三井造船株式会社 | 半導体基板熱処理装置 |
-
2011
- 2011-03-31 JP JP2011080553A patent/JP4980475B1/ja active Active
- 2011-10-20 KR KR1020137007418A patent/KR101309385B1/ko active IP Right Grant
- 2011-10-20 CN CN201180046790.1A patent/CN103155120B/zh active Active
- 2011-10-20 WO PCT/JP2011/074171 patent/WO2012132077A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63284810A (ja) * | 1987-04-24 | 1988-11-22 | エルピーイー・ソチエタ・ペル・アチオニ | エピタキシヤル反応炉 |
JPH03241733A (ja) * | 1990-02-20 | 1991-10-28 | Fujitsu Ltd | 気体成長装置 |
JP2002355550A (ja) * | 2001-03-28 | 2002-12-10 | Tadahiro Omi | プラズマ処理装置、プラズマ処理方法及び遅波板 |
JP2003007638A (ja) * | 2001-06-21 | 2003-01-10 | June Kim Hyoung | 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置 |
JP2005276527A (ja) * | 2004-03-23 | 2005-10-06 | Mitsui Eng & Shipbuild Co Ltd | 誘導加熱装置 |
JP2008226857A (ja) * | 2008-05-16 | 2008-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP2010059490A (ja) * | 2008-09-04 | 2010-03-18 | Tokyo Electron Ltd | 熱処理装置 |
JP2010225396A (ja) * | 2009-03-23 | 2010-10-07 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103155120A (zh) | 2013-06-12 |
CN103155120B (zh) | 2015-10-21 |
KR20130037231A (ko) | 2013-04-15 |
KR101309385B1 (ko) | 2013-09-17 |
WO2012132077A1 (ja) | 2012-10-04 |
JP2012216659A (ja) | 2012-11-08 |
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