JP4980475B1 - 誘導加熱装置 - Google Patents

誘導加熱装置 Download PDF

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Publication number
JP4980475B1
JP4980475B1 JP2011080553A JP2011080553A JP4980475B1 JP 4980475 B1 JP4980475 B1 JP 4980475B1 JP 2011080553 A JP2011080553 A JP 2011080553A JP 2011080553 A JP2011080553 A JP 2011080553A JP 4980475 B1 JP4980475 B1 JP 4980475B1
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JP
Japan
Prior art keywords
induction heating
cooling
chamber
magnetic pole
magnetically permeable
Prior art date
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Application number
JP2011080553A
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English (en)
Japanese (ja)
Other versions
JP2012216659A (ja
Inventor
直喜 内田
良弘 岡崎
一博 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering and Shipbuilding Co Ltd, Mitsui E&S Holdings Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Priority to JP2011080553A priority Critical patent/JP4980475B1/ja
Priority to KR1020137007418A priority patent/KR101309385B1/ko
Priority to CN201180046790.1A priority patent/CN103155120B/zh
Priority to PCT/JP2011/074171 priority patent/WO2012132077A1/ja
Application granted granted Critical
Publication of JP4980475B1 publication Critical patent/JP4980475B1/ja
Publication of JP2012216659A publication Critical patent/JP2012216659A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Induction Heating (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011080553A 2011-03-31 2011-03-31 誘導加熱装置 Active JP4980475B1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011080553A JP4980475B1 (ja) 2011-03-31 2011-03-31 誘導加熱装置
KR1020137007418A KR101309385B1 (ko) 2011-03-31 2011-10-20 유도가열장치
CN201180046790.1A CN103155120B (zh) 2011-03-31 2011-10-20 感应加热装置
PCT/JP2011/074171 WO2012132077A1 (ja) 2011-03-31 2011-10-20 誘導加熱装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011080553A JP4980475B1 (ja) 2011-03-31 2011-03-31 誘導加熱装置

Publications (2)

Publication Number Publication Date
JP4980475B1 true JP4980475B1 (ja) 2012-07-18
JP2012216659A JP2012216659A (ja) 2012-11-08

Family

ID=46678907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011080553A Active JP4980475B1 (ja) 2011-03-31 2011-03-31 誘導加熱装置

Country Status (4)

Country Link
JP (1) JP4980475B1 (zh)
KR (1) KR101309385B1 (zh)
CN (1) CN103155120B (zh)
WO (1) WO2012132077A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020520129A (ja) 2017-05-10 2020-07-02 マクマホン, シェーン トマスMCMAHON, Shane Thomas 薄膜結晶化プロセス

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63284810A (ja) * 1987-04-24 1988-11-22 エルピーイー・ソチエタ・ペル・アチオニ エピタキシヤル反応炉
JPH03241733A (ja) * 1990-02-20 1991-10-28 Fujitsu Ltd 気体成長装置
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2003007638A (ja) * 2001-06-21 2003-01-10 June Kim Hyoung 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置
JP2005276527A (ja) * 2004-03-23 2005-10-06 Mitsui Eng & Shipbuild Co Ltd 誘導加熱装置
JP2008226857A (ja) * 2008-05-16 2008-09-25 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2010059490A (ja) * 2008-09-04 2010-03-18 Tokyo Electron Ltd 熱処理装置
JP2010225396A (ja) * 2009-03-23 2010-10-07 Tokyo Electron Ltd マイクロ波プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1035252A (zh) * 1988-04-22 1989-09-06 谭言毅 用作分离或过滤的磁装置
JP3363239B2 (ja) * 1994-03-23 2003-01-08 三菱電機株式会社 電磁誘導加熱装置
JP3643273B2 (ja) * 1999-10-28 2005-04-27 株式会社ソディック リニアモータのコイル装置およびその製造方法
KR100621698B1 (ko) 2004-11-01 2006-09-19 삼성전자주식회사 유도결합 플라즈마 처리장치
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63284810A (ja) * 1987-04-24 1988-11-22 エルピーイー・ソチエタ・ペル・アチオニ エピタキシヤル反応炉
JPH03241733A (ja) * 1990-02-20 1991-10-28 Fujitsu Ltd 気体成長装置
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2003007638A (ja) * 2001-06-21 2003-01-10 June Kim Hyoung 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置
JP2005276527A (ja) * 2004-03-23 2005-10-06 Mitsui Eng & Shipbuild Co Ltd 誘導加熱装置
JP2008226857A (ja) * 2008-05-16 2008-09-25 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
JP2010059490A (ja) * 2008-09-04 2010-03-18 Tokyo Electron Ltd 熱処理装置
JP2010225396A (ja) * 2009-03-23 2010-10-07 Tokyo Electron Ltd マイクロ波プラズマ処理装置

Also Published As

Publication number Publication date
CN103155120A (zh) 2013-06-12
CN103155120B (zh) 2015-10-21
KR20130037231A (ko) 2013-04-15
KR101309385B1 (ko) 2013-09-17
WO2012132077A1 (ja) 2012-10-04
JP2012216659A (ja) 2012-11-08

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