CN102812778B - 感应加热装置 - Google Patents
感应加热装置 Download PDFInfo
- Publication number
- CN102812778B CN102812778B CN2011800042013A CN201180004201A CN102812778B CN 102812778 B CN102812778 B CN 102812778B CN 2011800042013 A CN2011800042013 A CN 2011800042013A CN 201180004201 A CN201180004201 A CN 201180004201A CN 102812778 B CN102812778 B CN 102812778B
- Authority
- CN
- China
- Prior art keywords
- induction heating
- heating equipment
- described load
- load coils
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 154
- 230000006698 induction Effects 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 claims description 46
- 238000004804 winding Methods 0.000 claims description 29
- 238000013459 approach Methods 0.000 claims description 5
- 230000005389 magnetism Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 2
- 238000000638 solvent extraction Methods 0.000 abstract 2
- 230000035699 permeability Effects 0.000 description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 6
- 239000012467 final product Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium Chemical class 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Induction Heating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (69)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011080554A JP4918168B1 (ja) | 2011-03-31 | 2011-03-31 | 誘導加熱装置 |
JP2011-080554 | 2011-03-31 | ||
PCT/JP2011/074172 WO2012132078A1 (ja) | 2011-03-31 | 2011-10-20 | 誘導加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102812778A CN102812778A (zh) | 2012-12-05 |
CN102812778B true CN102812778B (zh) | 2013-12-11 |
Family
ID=46243779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011800042013A Active CN102812778B (zh) | 2011-03-31 | 2011-10-20 | 感应加热装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4918168B1 (zh) |
KR (1) | KR101184133B1 (zh) |
CN (1) | CN102812778B (zh) |
WO (1) | WO2012132078A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9995799B2 (en) * | 2015-07-14 | 2018-06-12 | The Boeing Company | System and method for magnetic characterization of induction heating wires |
CN110315619B (zh) * | 2019-08-07 | 2021-03-23 | 中国林业科学研究院木材工业研究所 | 一种木制品弯曲构件成型方法及其装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1366786A (zh) * | 2000-02-10 | 2002-08-28 | 应达感应加热公司 | 形状复杂工件的感应热处理 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1215444B (it) * | 1987-04-24 | 1990-02-14 | L P E S P A | Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali. |
JPH03241733A (ja) * | 1990-02-20 | 1991-10-28 | Fujitsu Ltd | 気体成長装置 |
JP4402860B2 (ja) * | 2001-03-28 | 2010-01-20 | 忠弘 大見 | プラズマ処理装置 |
EP1271620B1 (en) | 2001-06-21 | 2013-05-29 | Hyoung June Kim | Method and apparatus for heat treatment of semiconductor films |
JP5213594B2 (ja) * | 2008-09-04 | 2013-06-19 | 東京エレクトロン株式会社 | 熱処理装置 |
JP5297306B2 (ja) * | 2009-08-31 | 2013-09-25 | 三井造船株式会社 | 誘導加熱方法および誘導加熱装置 |
-
2011
- 2011-03-31 JP JP2011080554A patent/JP4918168B1/ja active Active
- 2011-10-20 KR KR1020127006263A patent/KR101184133B1/ko active IP Right Grant
- 2011-10-20 WO PCT/JP2011/074172 patent/WO2012132078A1/ja active Application Filing
- 2011-10-20 CN CN2011800042013A patent/CN102812778B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1366786A (zh) * | 2000-02-10 | 2002-08-28 | 应达感应加热公司 | 形状复杂工件的感应热处理 |
Also Published As
Publication number | Publication date |
---|---|
WO2012132078A1 (ja) | 2012-10-04 |
CN102812778A (zh) | 2012-12-05 |
KR101184133B1 (ko) | 2012-09-19 |
JP2012216660A (ja) | 2012-11-08 |
JP4918168B1 (ja) | 2012-04-18 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Mitsui AIS Corp. Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181101 Address after: Tokyo, Japan Patentee after: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Address before: Tokyo, Japan Patentee before: Mitsui AIS Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240311 Address after: Tokyo, Japan Patentee after: Mitsui Yiaisi Co.,Ltd. Country or region after: Japan Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Country or region before: Japan |