CN103108992A - 结晶状硅晶圆的纹理蚀刻液组成物及纹理蚀刻方法(2) - Google Patents
结晶状硅晶圆的纹理蚀刻液组成物及纹理蚀刻方法(2) Download PDFInfo
- Publication number
- CN103108992A CN103108992A CN2011800392341A CN201180039234A CN103108992A CN 103108992 A CN103108992 A CN 103108992A CN 2011800392341 A CN2011800392341 A CN 2011800392341A CN 201180039234 A CN201180039234 A CN 201180039234A CN 103108992 A CN103108992 A CN 103108992A
- Authority
- CN
- China
- Prior art keywords
- pyrrolidone
- etching
- silicon wafer
- morpholine
- hydroxyethyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 238000009835 boiling Methods 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 59
- 239000010703 silicon Substances 0.000 claims description 59
- 239000000470 constituent Substances 0.000 claims description 55
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 28
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- 229910052731 fluorine Inorganic materials 0.000 claims description 22
- 239000011737 fluorine Substances 0.000 claims description 22
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- -1 N-methylmorpholine-N-oxide compound Chemical class 0.000 claims description 13
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 10
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 claims description 10
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 7
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 6
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 claims description 4
- OJGMBLNIHDZDGS-UHFFFAOYSA-N N-Ethylaniline Chemical compound CCNC1=CC=CC=C1 OJGMBLNIHDZDGS-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 claims description 4
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 claims description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 3
- 125000000129 anionic group Chemical group 0.000 claims description 3
- 125000002091 cationic group Chemical group 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 150000000177 1,2,3-triazoles Chemical class 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- QKGBRANQIWBMED-UHFFFAOYSA-N 1-(2-methoxyethyl)pyrrolidin-2-one Chemical compound COCCN1CCCC1=O QKGBRANQIWBMED-UHFFFAOYSA-N 0.000 claims description 2
- GRKJCXAFYOSNTD-UHFFFAOYSA-N 1-(2-methoxypropyl)pyrrolidin-2-one Chemical compound COC(C)CN1CCCC1=O GRKJCXAFYOSNTD-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 claims description 2
- LVUQCTGSDJLWCE-UHFFFAOYSA-N 1-benzylpyrrolidin-2-one Chemical compound O=C1CCCN1CC1=CC=CC=C1 LVUQCTGSDJLWCE-UHFFFAOYSA-N 0.000 claims description 2
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 claims description 2
- PBGPBHYPCGDFEZ-UHFFFAOYSA-N 1-ethenylpiperidin-2-one Chemical compound C=CN1CCCCC1=O PBGPBHYPCGDFEZ-UHFFFAOYSA-N 0.000 claims description 2
- BAWUFGWWCWMUNU-UHFFFAOYSA-N 1-hexylpyrrolidin-2-one Chemical compound CCCCCCN1CCCC1=O BAWUFGWWCWMUNU-UHFFFAOYSA-N 0.000 claims description 2
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 claims description 2
- HUUPVABNAQUEJW-UHFFFAOYSA-N 1-methylpiperidin-4-one Chemical compound CN1CCC(=O)CC1 HUUPVABNAQUEJW-UHFFFAOYSA-N 0.000 claims description 2
- KYWXRBNOYGGPIZ-UHFFFAOYSA-N 1-morpholin-4-ylethanone Chemical compound CC(=O)N1CCOCC1 KYWXRBNOYGGPIZ-UHFFFAOYSA-N 0.000 claims description 2
- YAXQOLYGKLGQKA-UHFFFAOYSA-N 1-morpholin-4-ylpropan-2-ol Chemical compound CC(O)CN1CCOCC1 YAXQOLYGKLGQKA-UHFFFAOYSA-N 0.000 claims description 2
- LUVQSCCABURXJL-UHFFFAOYSA-N 1-tert-butylpyrrolidin-2-one Chemical compound CC(C)(C)N1CCCC1=O LUVQSCCABURXJL-UHFFFAOYSA-N 0.000 claims description 2
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 claims description 2
- KRNUKKZDGDAWBF-UHFFFAOYSA-N 2-(n-ethyl-n-m-toluidino)ethanol Chemical compound OCCN(CC)C1=CC=CC(C)=C1 KRNUKKZDGDAWBF-UHFFFAOYSA-N 0.000 claims description 2
- HYVGFUIWHXLVNV-UHFFFAOYSA-N 2-(n-ethylanilino)ethanol Chemical compound OCCN(CC)C1=CC=CC=C1 HYVGFUIWHXLVNV-UHFFFAOYSA-N 0.000 claims description 2
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical class OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 claims description 2
- MWGATWIBSKHFMR-UHFFFAOYSA-N 2-anilinoethanol Chemical compound OCCNC1=CC=CC=C1 MWGATWIBSKHFMR-UHFFFAOYSA-N 0.000 claims description 2
- PWORFEDVDWBHSJ-UHFFFAOYSA-N 2-methylbenzotriazole Chemical compound C1=CC=CC2=NN(C)N=C21 PWORFEDVDWBHSJ-UHFFFAOYSA-N 0.000 claims description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 claims description 2
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 claims description 2
- IDWRJRPUIXRFRX-UHFFFAOYSA-N 3,5-dimethylpiperidine Chemical compound CC1CNCC(C)C1 IDWRJRPUIXRFRX-UHFFFAOYSA-N 0.000 claims description 2
- WXVKGHVDWWXBJX-UHFFFAOYSA-N 3-morpholin-4-ylpropanenitrile Chemical compound N#CCCN1CCOCC1 WXVKGHVDWWXBJX-UHFFFAOYSA-N 0.000 claims description 2
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- FHQRDEDZJIFJAL-UHFFFAOYSA-N 4-phenylmorpholine Chemical compound C1COCCN1C1=CC=CC=C1 FHQRDEDZJIFJAL-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- RYECOJGRJDOGPP-UHFFFAOYSA-N Ethylurea Chemical compound CCNC(N)=O RYECOJGRJDOGPP-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- HTLZVHNRZJPSMI-UHFFFAOYSA-N N-ethylpiperidine Chemical compound CCN1CCCCC1 HTLZVHNRZJPSMI-UHFFFAOYSA-N 0.000 claims description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- ABDBNWQRPYOPDF-UHFFFAOYSA-N carbonofluoridic acid Chemical compound OC(F)=O ABDBNWQRPYOPDF-UHFFFAOYSA-N 0.000 claims description 2
- YQHLDYVWEZKEOX-UHFFFAOYSA-N cumene hydroperoxide Chemical compound OOC(C)(C)C1=CC=CC=C1 YQHLDYVWEZKEOX-UHFFFAOYSA-N 0.000 claims description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 2
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 2
- RWIVICVCHVMHMU-UHFFFAOYSA-N n-aminoethylmorpholine Chemical compound NCCN1CCOCC1 RWIVICVCHVMHMU-UHFFFAOYSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 2
- JOFWLTCLBGQGBO-UHFFFAOYSA-N triazolam Chemical compound C12=CC(Cl)=CC=C2N2C(C)=NN=C2CN=C1C1=CC=CC=C1Cl JOFWLTCLBGQGBO-UHFFFAOYSA-N 0.000 claims description 2
- 229960003386 triazolam Drugs 0.000 claims description 2
- 150000002221 fluorine Chemical class 0.000 claims 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001923 cyclic compounds Chemical class 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 101001136034 Homo sapiens Phosphoribosylformylglycinamidine synthase Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 150000005857 PFAS Chemical class 0.000 description 1
- 102100036473 Phosphoribosylformylglycinamidine synthase Human genes 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XLYOFNOQVPJJNP-DYCDLGHISA-N deuterium hydrogen oxide Chemical compound [2H]O XLYOFNOQVPJJNP-DYCDLGHISA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 150000002240 furans Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 1
- 229910052912 lithium silicate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明揭示一种用于将结晶状硅晶圆纹理化的蚀刻组成物,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法,所述蚀刻组成物可将结晶状硅晶圆表面的光吸收度最大化,该蚀刻组成物包括按组成物总量计为:(A)碱性化合物;(B)沸点为100℃以上的环状化合物;(C)氟系界面活性剂;以及(D)水。
Description
技术领域
本发明关于一种用于将结晶状硅晶圆纹理化的蚀刻组成物,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。更具体而言,本发明关于一种用于将结晶状硅晶圆纹理化的蚀刻组成物,其可将结晶状硅晶圆表面均匀地纹理化成为精细角锥状而获得高吸收度,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。本申请案请求在2010年8月12日所提出的韩国专利申请案KR10-2010-0077622号的权益,其在此全部并入本申请案作为参考。
背景技术
因化石能源耗尽、油价上涨、气候变化、环境问题等,全世界已积极地引入新颖的可再生能源来源作为新动力来源。目前作为化石燃料能源的替代品的新颖的可再生能源来源的实施例包括太阳光、太阳热、风力、生质、燃料电池、水力等。其中使用太阳能电池产生太阳能最为活跃地普及。
太阳能电池为将太阳能转化成为电能的光电池。光电池的实施例包括利用金属与半导体间接触的硒光电池、亚硫酸铜光电池、利用P-N接面半导体原理的结晶硅光电池等。结晶硅光电池制成由将磷扩散至P-型硅半导体的表面中而制造的P-N接面半导体基板,其中将硼加入硅以使得N-型硅半导体附着P-型硅半导体。在此P-N接面半导体基板中由P-N接面形成电场且将该基板用光(如太阳光)照射时,电子(-)与电洞(+)被激发因而自由地活动。在此情形,在电子(-)与电洞(+)进入由P-N接面所形成的电场中时,电子(-)到达N-型半导体且电洞(+)到达P-型半导体。如此,在P-型半导体表面与N-型半导体表面上形成电极,且电子流到外部电路时产生电流。基于此原理而将太阳能转化成电能。因此为了将每单位面积的硅光电池的电力最大化,其必须降低硅光电池的反射度且将吸收度最大化。因此将太阳能电池用硅晶圆的表面纹理化成为精细角锥状,且以抗反射膜处理。被纹理化成为精细角锥状的硅表面降低宽带带波长的入射光反射度以增加原先吸收光的强度,因而提升性能,即太阳能电池的效率。迄今已研究及发展各种将硅晶圆表面纹理化成为精细角锥状的方法。以下为其具体实施例。
美国专利4137123揭示一种硅纹理化蚀刻剂,其中将0.5至10重量%的硅溶解在包括0至75重量%的乙二醇、0.05至50重量%的氢氧化钾、剩余为去离子水的非等向性蚀刻剂中。然而在使用此硅纹理化蚀刻剂时在硅表面上不良地形成角锥体,使得反射度增加,因而降低太阳能电池的效率的问题。
欧洲专利公告0477424A1揭示一种纹理蚀刻方法,其带有其中对将硅溶解于包括乙二醇、氢氧化钾,剩余为去离子水的溶液的纹理蚀刻液供应氧的充气程序。然而,在使用此纹理蚀刻方法时,会有在硅表面上不良地形成角锥体,使得反射度增加,因而降低太阳能电池的效率,且必须另外提供充气机的问题。
韩国专利公告1997-0052617揭示一种纹理蚀刻液,其包括0.5至5体积%的氢氧化钾溶液、3.0至20体积%的异丙醇、及75至96.5体积%的去离子水。此外,美国专利6451218揭示一种纹理蚀刻液,其包括碱性化合物、异丙醇、水溶性碱性乙二醇,剩余为水。然而,这些纹理蚀刻液会有因异丙醇的沸点低而必须在纹理化程序期间另外供应异丙醇,使得使用大量异丙醇,结果在生产力与经济效率方面不利,及因在纹理化程序期间供应异丙醇而发生化合物温度梯度,因而硅晶圆表面的纹理均匀性恶化的问题。
如上所述,现有硅晶圆纹理化程序存在因为在仅使用氢氧化钾时会使硅晶圆被非等向性地蚀刻,因而增加硅晶圆的反射度的问题。为了解决此问题而将氢氧化钾与异丙醇组合使用。然而,即使是在此情形仍会有因纹理化程序是在75至80℃进行,沸点为80℃的异丙醇被蒸发,使得必须在纹理化程序期间另外供应异丙醇,其结果化合物有温度梯度,因而硅晶圆表面的纹理均匀性恶化的问题。
发明内容
因而,现已设计本发明以解决上述问题,且本发明的一个目的为提供一种用于将结晶状硅晶圆纹理化的蚀刻组成物,其可在结晶状硅晶圆表面上形成精细角锥状的均匀纹理以易于吸收光,其相较于使用高沸点环状化合物的现有蚀刻组成物可明显地减少蚀刻组成物的使用而可处理较大量的结晶状硅晶圆,其不需要额外硅粒子以形成精细角锥体,且不需要在充气程序(供氧程序)或纹理化程序期间引入化合物,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。
为了完成上述目的,本发明的一个方面是提供一种用于将结晶状硅晶圆纹理化的蚀刻组成物,包括按组成物总量计为:0.1至20重量%的碱性化合物;0.1至50重量%的沸点为100℃以上的环状化合物;0.000001至10重量%的氟系界面活性剂;及剩余为水。
本发明的另一个方面是提供一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。
如上所述,依照本发明用于将结晶状硅晶圆纹理化的蚀刻组成物因其可借助在结晶状硅晶圆上形成均匀的精细角锥体而将光吸收度最大化,因其相较于现有蚀刻组成物可处理较大量的结晶状硅晶圆,如此增加经济效率,及因其不需要充气装置及化学引入程序,如此降低初期制造成本且形成均匀及精细的角锥体而有利。
附图说明
图1示出了以实施例6的蚀刻组成物处理的结晶状硅晶圆的纹理的光学相片;
图2示出了以实施例6的蚀刻组成物纹理化的结晶状硅晶圆表面的SEM相片;及
图3示出了以实施例6的蚀刻组成物纹理化的结晶状硅晶圆切片的SEM相片。
具体实施方式
以下参考附图而详述本发明的较佳具体实施例。
本发明关于一种用于将结晶状硅晶圆纹理化的蚀刻组成物,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。更具体而言,本发明关于一种用于将结晶状硅晶圆纹理化的蚀刻组成物,其可将结晶状硅晶圆表面均匀地纹理化成为精细角锥状以获得高吸收度,及一种使用该蚀刻组成物将结晶状硅晶圆蚀刻的方法。
依照本发明的用于将结晶状硅晶圆纹理化的蚀刻组成物包括(A)碱性化合物;(B)沸点为100℃以上的环状化合物;(C)氟系界面活性剂;及(D)水。
本发明的蚀刻组成物所包括的碱性化合物(A)可包括按组成物总量计为0.1至20重量%、较佳为1至5重量%的量。碱性化合物的量在上述范围内时,会使得结晶状硅晶圆的表面被蚀刻。
碱性化合物可为选自由氢氧化钾、氢氧化钠、氢氧化铵、四羟甲铵、四羟乙铵、及其混合物所组成的群组中的一种或多种。碱性化合物可更佳为氢氧化钾和/或氢氧化钠。
本发明的蚀刻组成物包括的沸点为100℃以上、较佳为150℃至400℃的环状化合物(B)可包括按组成物总量计为0.1至50重量%、较佳为2至10重量%的量。环状化合物的量在上述范围内时,环状化合物改良了结晶状硅晶圆表面的润湿性,如此防止其表面被碱性化合物过度蚀刻,因而在其表面上形成均匀的精细角锥体。此外,环状化合物用以借助快速减少被蚀刻及溶解的氢气泡而防止气泡黏附现象发生。
环状化合物在此为C4至C10环状化合物、或包括一个或多个的选自N、O与S的杂元素的C4至C10杂环化合物。
沸点为100℃以上的环状化合物可为选自由哌嗪、吗啉、吡啶、哌啶、哌啶酮、吡咯烷、吡咯烷酮、四氢咪唑酮、呋喃、苯胺、甲苯胺、与内酯所组成的群组中的一种或多种。沸点为100℃以上的环状化合物的具体实施例可包括哌嗪、N-甲基哌嗪、N-乙基哌嗪、羟乙基哌嗪、N-(2-氨基乙基)哌嗪、N,N’-二甲基哌嗪、吗啉、N-甲基吗啉、N-乙基吗啉、N-苯基吗啉、N-可可基吗啉、N-(2-氨基乙基)吗啉、N-(2-氰基乙基)吗啉、N-(2-羟基乙基)吗啉、N-(2-羟基丙基)吗啉、N-乙酰基吗啉、N-甲酰基吗啉、N-甲基吗啉-N-氧化物、甲吡啶、N-甲基哌啶、3,5-二甲基哌啶、N-乙基哌啶、N-(2-羟基乙基)哌啶、N-甲基-4-哌啶酮、N-乙烯基-2-哌啶酮、N-甲基吡咯啶、N-甲基吡咯烷酮、N-乙基-2-吡咯烷酮、N-异丙基-2-吡咯烷酮、N-丁基-2-吡咯烷酮、N-叔丁基-2-吡咯烷酮、N-己基-2-吡咯烷酮、N-辛基-2-吡咯烷酮、N-苄基-2-吡咯烷酮、N-环己基-2-吡咯烷酮、N-乙烯基-2-吡咯烷酮、N-(2-羟基乙基)-2-吡咯烷酮、N-(2-甲氧基乙基)-2-吡咯烷酮、N-(2-甲氧基丙基)-2-吡咯烷酮、N-(2-乙氧基乙基)-2-吡咯烷酮、N-甲基四氢咪唑酮、二甲基四氢咪唑酮、N-(2-羟基乙基)-伸乙脲、四氢呋喃、四氢糠醇、N-甲基苯胺、N-乙基苯胺、N,N-二甲基苯胺、N-(2-羟基乙基)苯胺、N,N-双-(2-羟基乙基)苯胺、N-乙基-N-(2-羟基乙基)苯胺、N,N-二乙基-邻甲苯胺、N-乙基-N-(2-羟基乙基)-间甲苯胺、二甲基苄胺、γ-丁内酯、甲苯三唑、1,2,3-苯并三唑、1,2,3-三唑、1,2,4-三唑、3-氨基-1,2,4-三唑、4-氨基-4H-1,2,4-三唑、1-羟基苯并三唑、1-甲基苯并三唑、2-甲基苯并三唑、5-甲基苯并三唑、苯并三唑-5-碳酸酯、硝基苯并三唑、与2-(2H-苯并三唑-2-基)-4,6-二-叔丁基酚。
本发明的蚀刻组成物所包括的氟系界面活性剂(C)可包括按组成物总量计为0.000001至10重量%、较佳为0.0001至1重量%的量。氟系界面活性剂的量在上述范围内时,氟系界面活性剂与沸点为100℃以上的环状化合物一起降低了蚀刻组成物的表面张力以改良结晶状硅晶圆表面的润湿性,因而防止其表面被碱性化合物过度蚀刻。
氟系界面活性剂可为选自由阴离子性氟系界面活性剂、阳离子性氟系界面活性剂、两性离子性氟系界面活性剂、及非离子性氟系界面活性剂所组成的群组中的一种或多种。氟系界面活性剂的具体实施例可包括阴离子性氟系界面活性剂,其包括全氟烷基羧酸酯、全氟烷基磺酸酯、全氟烷基硫酸酯、与全氟烷基磷酸酯;阳离子性氟系界面活性剂,其包括全氟烷基胺与全氟烷基季铵;两性离子性氟系界面活性剂,其包括全氟烷基羧基甜菜碱与全氟烷基磺基甜菜碱;及非离子性氟系界面活性剂,其包括氟烷基聚氧乙烯与全氟烷基聚氧乙烯。
本发明的蚀刻组成物所包括的水(D)为使组成物总量为100重量%的剩余量。水可为去离子蒸馏水,且该去离子蒸馏水用于半导体程序且具有18MΩ/公分以上的电阻率。
本发明的蚀刻组成物可进一步包括:(E)含氧化硅化合物。含氧化硅化合物可包括按组成物总量计为0.00001至10重量%、较佳为0.0001至1重量%的量。在含氧化硅化合物的量在上述范围内时,含氧化硅化合物被物理地吸收于结晶状硅晶圆表面,如此作为遮罩(mask),因而在其表面上形成角锥体。
含氧化硅化合物可为选自由粉状氧化硅、含氧化硅胶体溶液、与液态金属硅酸盐所组成的群组中的一种或多种。含氧化硅化合物的具体实施例可包括粉状氧化硅、以Na2O稳定的胶体氧化硅溶液、以K2O稳定的胶体氧化硅溶液、以酸性液体稳定的胶体氧化硅溶液、以NH3稳定的胶体氧化硅溶液、以有机溶剂(如乙醇、丙醇、乙二醇、甲基乙基酮(MEK)、或甲基异丁基酮(MIBK)稳定的胶体氧化硅溶液、液态硅酸钠、液态硅酸钾、及液态硅酸锂。
本发明的蚀刻组成物可应用于浸渍型、喷雾型及单片型蚀刻程序。
此外,本发明提供一种使用上述蚀刻组成物,其包括(A)0.1至20重量%的碱性化合物,(B)0.1至50重量%的沸点为100℃以上的环状化合物,(C)0.000001至10重量%的氟系界面活性剂,及(D)水,在50~100℃浸渍及/或喷雾30秒~60分钟而将结晶状硅晶圆蚀刻的方法。
以下,参考以下的实施例而详述本发明。然而这些实施例仅仅示例性地说明本发明,且本发明的范围不限于这些实施例。以下的实施例可由本领域技术人员在本发明的范围内加以修改及变化。
实施例1至12及比较例1至4:用于将结晶状硅晶圆纹理化的蚀刻组成物的制备。
实施例1至12及比较例1至4的用于将结晶状硅晶圆纹理化的蚀刻组成物是依照以下表1所示的成分及组成比例而制备。
表1
注)KOH﹕氢氧化钾
NaOH﹕氢氧化钠
NMP﹕N-甲基吡咯烷酮
NMM﹕N-甲基吗啉
AEP﹕氨基乙基哌嗪
GBL﹕γ-丁内酯
IPA﹕异丙醇
EG﹕乙二醇
MDG﹕甲基二甘醇
MEA﹕单乙胺
PFAS﹕全氟烷基硫酸酯
PFAP﹕全氟烷基磷酸酯
测试例﹕用于将结晶状硅晶圆纹理化的蚀刻组成物的性质的评估
将单晶硅晶圆浸泡于实施例1至12及比较例1至4的用于将结晶状硅晶圆纹理化的各蚀刻组成物中。在此情形,纹理化是在80℃及30分钟的条件下实行。各蚀刻组成物的纹理均匀性是以肉眼(数字相机)、光学显微镜、扫描电子显微镜(SEM)等评估,且使用SEM测量角锥体的大小。在照射波长范围为400~800纳米的UV光时测量各蚀刻组成物的平均反射度。其结果表示在以下表2及图1至3。
表2
※纹理均匀性
◎:在全部晶圆表面上形成角锥体
O:在一部分晶圆上形成角锥体(未形成角锥体的程度小于5%)
X:未在晶圆上形成角锥体(未形成角锥体的程度超过90%)
名词“化学变色”表示由于从加热至纹理化温度时随时间的自发变化因而无需纹理测试。
参考上述表2及图1至3可知,使用实施例1至12的蚀刻组成物的单晶硅晶圆的纹理均匀性优良。
然而,比较例1的蚀刻组成物因在纹理化程序期间应持续地添加IPA(由于其低沸点的故),如此将纹理均匀性恶化(因断续地加入IPA所发生的温度梯度所造成)且增加纹理成本而成问题。
此外,比较例2的蚀刻组成物的纹理均匀性远比实施例1至12的蚀刻组成物差。另外,在比较例3及4的蚀刻组成物的情形,由于从加热至纹理化温度时随时间的自发变化因而无需纹理测试。
同时,图1为显示以实施例6的蚀刻组成物处理的结晶状硅晶圆的纹理的光学相片。图2为显示以实施例6的蚀刻组成物纹理化的结晶状硅晶圆表面的SEM相片。图3为显示以实施例6的蚀刻组成物纹理化的结晶状硅晶圆切片的SEM相片。参考图1至3可知,其在全部晶圆表面上形成角锥体。
Claims (6)
1.一种用于将结晶状硅晶圆纹理化的蚀刻组成物,包括按组成物总量计为:
0.1至20重量%的碱性化合物;
0.1至50重量%的沸点为100℃以上的环状化合物;
0.000001至10重量%的氟系界面活性剂;以及
剩余为水。
2.根据权利要求1所述的蚀刻组成物,其中该碱性化合物选自由氢氧化钾、氢氧化钠、氢氧化铵、四羟甲铵、与四羟乙铵所组成的群组中的一种或多种。
3.根据权利要求1所述的蚀刻组成物,其中该沸点为100℃以上的环状化合物选自由哌嗪、N-甲基哌嗪、N-乙基哌嗪、羟乙基哌嗪、N-(2-氨基乙基)哌嗪、N,N’-二甲基哌嗪、吗啉、N-甲基吗啉、N-乙基吗啉、N-苯基吗啉、N-可可基吗啉、N-(2-氨基乙基)吗啉、N-(2-氰基乙基)吗啉、N-(2-羟基乙基)吗啉、N-(2-羟基丙基)吗啉、N-乙酰基吗啉、N-甲酰基吗啉、N-甲基吗啉-N-氧化物、甲吡啶、N-甲基哌啶、3,5-二甲基哌啶、N-乙基哌啶、N-(2-羟基乙基)哌啶、N-甲基-4-哌啶酮、N-乙烯基-2-哌啶酮、N-甲基吡咯烷、N-甲基吡咯烷酮、N-乙基-2-吡咯烷酮、N-异丙基-2-吡咯烷酮、N-丁基-2-吡咯烷酮、N-叔丁基-2-吡咯烷酮、N-己基-2-吡咯烷酮、N-辛基-2-吡咯烷酮、N-苄基-2-吡咯烷酮、N-环己基-2-吡咯烷酮、N-乙烯基-2-吡咯烷酮、N-(2-羟基乙基)-2-吡咯烷酮、N-(2-甲氧基乙基)-2-吡咯烷酮、N-(2-甲氧基丙基)-2-吡咯烷酮、N-(2-乙氧基乙基)-2-吡咯烷酮、N-甲基四氢咪唑酮、二甲基四氢咪唑酮、N-(2-羟基乙基)-伸乙脲、四氢呋喃、四氢糠醇、N-甲基苯胺、N-乙基苯胺、N,N-二甲基苯胺、N-(2-羟基乙基)苯胺、N,N-双-(2-羟基乙基)苯胺、N-乙基-N-(2-羟基乙基)苯胺、N,N-二乙基-邻甲苯胺、N-乙基-N-(2-羟基乙基)-间甲苯胺、二甲基苄胺、γ-丁内酯、甲苯三唑、1,2,3-苯并三唑、1,2,3-三唑、1,2,4-三唑、3-氨基-1,2,4-三唑、4-氨基-4H-1,2,4-三唑、1-羟基苯并三唑、1-甲基苯并三唑、2-甲基苯并三唑、5-甲基苯并三唑、苯并三唑-5-碳酸酯、硝基苯并三唑、与2-(2H-苯并三唑-2-基)-4,6-二-叔丁基酚所组成的群组中的一种或多种。
4.根据权利要求1所述的蚀刻组成物,其中该氟系界面活性剂选自由包括全氟烷基羧酸酯、全氟烷基磺酸酯、全氟烷基硫酸酯、与全氟烷基磷酸酯的阴离子性氟系界面活性剂;包括全氟烷基胺与全氟烷基季铵的阳离子性氟系界面活性剂;包括全氟烷基羧基甜菜碱与全氟烷基磺基甜菜碱的两性离子性氟系界面活性剂;及(包括氟烷基聚氧乙烯与全氟烷基聚氧乙烯的非离子性氟系界面活性剂所组成的群组中的一种或多种。
5.根据权利要求1所述的蚀刻组成物,其中该环状化合物具有150℃至400℃的沸点。
6.一种将结晶状硅晶圆蚀刻的方法,其使用权利要求1至5中任一项所述的蚀刻组成物将结晶状硅晶圆在50~100℃浸渍或喷雾30秒~60分钟。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100077622A KR20120015485A (ko) | 2010-08-12 | 2010-08-12 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 |
KR10-2010-0077622 | 2010-08-12 | ||
PCT/KR2011/005948 WO2012021025A2 (ko) | 2010-08-12 | 2011-08-12 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (2) |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103108992A true CN103108992A (zh) | 2013-05-15 |
CN103108992B CN103108992B (zh) | 2015-09-02 |
Family
ID=45568071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180039234.1A Expired - Fee Related CN103108992B (zh) | 2010-08-12 | 2011-08-12 | 结晶状硅晶圆的纹理蚀刻液组成物及纹理蚀刻方法(2) |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130137278A1 (zh) |
EP (1) | EP2604724B1 (zh) |
JP (1) | JP5799099B2 (zh) |
KR (1) | KR20120015485A (zh) |
CN (1) | CN103108992B (zh) |
TW (1) | TWI542664B (zh) |
WO (1) | WO2012021025A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104294368A (zh) * | 2013-07-19 | 2015-01-21 | 东友精细化工有限公司 | 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法 |
CN105297015A (zh) * | 2014-06-30 | 2016-02-03 | 东友精细化工有限公司 | 蚀刻液组合物及使用其制造液晶显示器用阵列基板的方法 |
CN112680227A (zh) * | 2020-12-23 | 2021-04-20 | 江苏奥首材料科技有限公司 | 一种led芯片粗化液及其制备方法与应用 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120015484A (ko) | 2010-08-12 | 2012-02-22 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 |
KR102122049B1 (ko) * | 2013-07-19 | 2020-06-11 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
KR102532413B1 (ko) * | 2016-07-21 | 2023-05-15 | 동우 화인켐 주식회사 | 폴리실리콘 식각액 조성물 및 반도체 소자의 제조방법 |
KR102668708B1 (ko) * | 2016-09-05 | 2024-05-23 | 동우 화인켐 주식회사 | 폴리실리콘 식각액 조성물 및 반도체 소자의 제조 방법 |
CN111509077B (zh) * | 2019-01-31 | 2022-01-18 | 嘉兴尚能光伏材料科技有限公司 | 单晶硅片制绒方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1679147A (zh) * | 2002-09-04 | 2005-10-05 | 默克专利有限公司 | 用于硅表面和层的蚀刻糊 |
US20070181534A1 (en) * | 2006-02-07 | 2007-08-09 | Fujifilm Corporation | Barrier polishing liquid and chemical mechanical polishing method |
KR20090102508A (ko) * | 2008-03-26 | 2009-09-30 | 엘지전자 주식회사 | 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법 |
TW200940755A (en) * | 2007-12-04 | 2009-10-01 | Mimasu Semiconductor Ind Co | Process for producing polycrystal silicon substrate and polycrystal silicon substrate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4137123A (en) | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
EP0477424B1 (de) | 1990-09-28 | 1995-02-22 | Siemens Solar GmbH | Nasschemische Strukturätzung von Silizium |
KR0180621B1 (ko) | 1995-12-01 | 1999-04-15 | 이창세 | 실리콘 웨이퍼의 텍스쳐 에칭 방법 및 텍스쳐 용액 |
DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
KR100610387B1 (ko) * | 1998-05-18 | 2006-08-09 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물 |
MY150000A (en) * | 2006-05-02 | 2013-11-15 | Mimasu Semiconductor Ind Co | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
CN101392376A (zh) * | 2007-09-19 | 2009-03-25 | 长瀬化成株式会社 | 蚀刻组合物 |
JP2010093194A (ja) * | 2008-10-10 | 2010-04-22 | Sharp Corp | 太陽電池の製造方法 |
-
2010
- 2010-08-12 KR KR1020100077622A patent/KR20120015485A/ko not_active Application Discontinuation
-
2011
- 2011-08-12 EP EP11816641.2A patent/EP2604724B1/en not_active Not-in-force
- 2011-08-12 US US13/816,294 patent/US20130137278A1/en not_active Abandoned
- 2011-08-12 TW TW100128917A patent/TWI542664B/zh active
- 2011-08-12 WO PCT/KR2011/005948 patent/WO2012021025A2/ko active Application Filing
- 2011-08-12 CN CN201180039234.1A patent/CN103108992B/zh not_active Expired - Fee Related
- 2011-08-12 JP JP2013524049A patent/JP5799099B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1679147A (zh) * | 2002-09-04 | 2005-10-05 | 默克专利有限公司 | 用于硅表面和层的蚀刻糊 |
US20070181534A1 (en) * | 2006-02-07 | 2007-08-09 | Fujifilm Corporation | Barrier polishing liquid and chemical mechanical polishing method |
TW200940755A (en) * | 2007-12-04 | 2009-10-01 | Mimasu Semiconductor Ind Co | Process for producing polycrystal silicon substrate and polycrystal silicon substrate |
KR20090102508A (ko) * | 2008-03-26 | 2009-09-30 | 엘지전자 주식회사 | 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104294368A (zh) * | 2013-07-19 | 2015-01-21 | 东友精细化工有限公司 | 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法 |
CN105297015A (zh) * | 2014-06-30 | 2016-02-03 | 东友精细化工有限公司 | 蚀刻液组合物及使用其制造液晶显示器用阵列基板的方法 |
CN112680227A (zh) * | 2020-12-23 | 2021-04-20 | 江苏奥首材料科技有限公司 | 一种led芯片粗化液及其制备方法与应用 |
Also Published As
Publication number | Publication date |
---|---|
KR20120015485A (ko) | 2012-02-22 |
TW201211213A (en) | 2012-03-16 |
JP2013538449A (ja) | 2013-10-10 |
US20130137278A1 (en) | 2013-05-30 |
EP2604724B1 (en) | 2015-02-25 |
WO2012021025A2 (ko) | 2012-02-16 |
EP2604724A4 (en) | 2013-11-27 |
CN103108992B (zh) | 2015-09-02 |
EP2604724A2 (en) | 2013-06-19 |
WO2012021025A3 (ko) | 2012-05-03 |
JP5799099B2 (ja) | 2015-10-21 |
TWI542664B (zh) | 2016-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103069049B (zh) | 结晶状硅晶圆的纹理蚀刻组成物及纹理蚀刻方法(1) | |
CN103108992B (zh) | 结晶状硅晶圆的纹理蚀刻液组成物及纹理蚀刻方法(2) | |
CN109888061B (zh) | 一种碱抛光高效perc电池及其制备工艺 | |
CN113707761A (zh) | 一种n型选择性发射极太阳能电池及其制备方法 | |
CN110265497B (zh) | 一种选择性发射极的n型晶体硅太阳电池及其制备方法 | |
CN107955974A (zh) | 倒金字塔绒面单晶硅片的制绒添加剂及其应用 | |
CN104562011B (zh) | 多晶硅片的制绒辅助剂及制绒工艺 | |
CN105206711A (zh) | 一种太阳能电池片加工方法 | |
Zhang et al. | A novel additive for rapid and uniform texturing on high-efficiency monocrystalline silicon solar cells | |
US20140080313A1 (en) | Etching composition and method for etching a semiconductor wafer | |
CN105590993A (zh) | 背面钝化太阳能电池的制备方法 | |
WO2011052941A2 (en) | Etching composition for texturing crystalline silicon-based wafer | |
KR20120078612A (ko) | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 | |
Joonwichien et al. | Implementation of selective emitter for industrial-sized PERCs using wet chemical etch-back process | |
CN103337558A (zh) | 一种n型晶体硅双面光伏电池的制备方法 | |
US20120122264A1 (en) | Method for producing photovoltaic cell | |
CN102664217A (zh) | 晶体硅双面太阳电池生产工艺 | |
EP2642529A1 (en) | Method for producing photovoltaic cell | |
CN205488171U (zh) | 一种全背场扩散n型硅基电池 | |
Quiebras | Wet chemical textures for crystalline silicon solar cells | |
CN103515481B (zh) | 用于降低入射光反射的单晶半导体衬底的织构方法 | |
CN106328724A (zh) | 一种双面晶硅太阳电池及其制备方法 | |
EP3406673B1 (en) | Anti-reflection coating composition and anti-reflection film utilizing same | |
CN104282796A (zh) | 一种硅晶制绒液及其制备方法 | |
CN102569518A (zh) | N型背接触太阳电池生产工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Jeonbuk, South Korea Applicant after: DONGWOO FINE-CHEM Co.,Ltd. Address before: Jeonbuk, South Korea Applicant before: DONGWOO FINE-CHEM CO.,LTD. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: DONG YOU FINE-CHEM TO: TONGWOO FINE CHEMICALS CO., LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 Termination date: 20210812 |
|
CF01 | Termination of patent right due to non-payment of annual fee |