CN103098231B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

Info

Publication number
CN103098231B
CN103098231B CN201180042768.XA CN201180042768A CN103098231B CN 103098231 B CN103098231 B CN 103098231B CN 201180042768 A CN201180042768 A CN 201180042768A CN 103098231 B CN103098231 B CN 103098231B
Authority
CN
China
Prior art keywords
layer
electrode layer
back electrode
light absorbing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180042768.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103098231A (zh
Inventor
李东根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103098231A publication Critical patent/CN103098231A/zh
Application granted granted Critical
Publication of CN103098231B publication Critical patent/CN103098231B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
CN201180042768.XA 2011-01-24 2011-10-06 太阳能电池及其制造方法 Expired - Fee Related CN103098231B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0006989 2011-01-24
KR1020110006989A KR101173401B1 (ko) 2011-01-24 2011-01-24 태양전지 및 그의 제조방법
PCT/KR2011/007397 WO2012102451A1 (en) 2011-01-24 2011-10-06 Solar cell and manufacturing method of the same

Publications (2)

Publication Number Publication Date
CN103098231A CN103098231A (zh) 2013-05-08
CN103098231B true CN103098231B (zh) 2016-08-03

Family

ID=46581003

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180042768.XA Expired - Fee Related CN103098231B (zh) 2011-01-24 2011-10-06 太阳能电池及其制造方法

Country Status (6)

Country Link
US (1) US20130000700A1 (enExample)
EP (1) EP2656395A4 (enExample)
JP (1) JP5901656B2 (enExample)
KR (1) KR101173401B1 (enExample)
CN (1) CN103098231B (enExample)
WO (1) WO2012102451A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7634584B2 (en) 2005-04-27 2009-12-15 Solarflare Communications, Inc. Packet validation in virtual network interface architecture
EP2720276A4 (en) * 2011-06-10 2014-12-24 Posco SOLAR CELL SUBSTRATE, MANUFACTURING METHOD AND SOLAR CELL THEREFOR
US8763018B2 (en) 2011-08-22 2014-06-24 Solarflare Communications, Inc. Modifying application behaviour
US9391840B2 (en) 2012-05-02 2016-07-12 Solarflare Communications, Inc. Avoiding delayed data
US9391841B2 (en) 2012-07-03 2016-07-12 Solarflare Communications, Inc. Fast linkup arbitration
US9246039B2 (en) 2012-10-12 2016-01-26 International Business Machines Corporation Solar cell with reduced absorber thickness and reduced back surface recombination
CN103904233B (zh) * 2012-12-25 2016-04-20 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
US9426124B2 (en) 2013-04-08 2016-08-23 Solarflare Communications, Inc. Locked down network interface
US10742604B2 (en) 2013-04-08 2020-08-11 Xilinx, Inc. Locked down network interface
EP2809033B1 (en) 2013-05-30 2018-03-21 Solarflare Communications Inc Packet capture in a network
KR20140141791A (ko) * 2013-05-30 2014-12-11 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
US10394751B2 (en) 2013-11-06 2019-08-27 Solarflare Communications, Inc. Programmed input/output mode
US20150206994A1 (en) * 2014-01-23 2015-07-23 Tsmc Solar Ltd. Solar cell front contact with thickness gradient
US9876049B2 (en) 2014-12-05 2018-01-23 Seiko Epson Corporation Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus
CN106024937A (zh) * 2016-06-23 2016-10-12 盐城普兰特新能源有限公司 一种cigs基薄膜太阳能电池及其制备方法
KR102089558B1 (ko) * 2018-07-11 2020-03-16 주식회사 프런티어에너지솔루션 페로브스카이트 태양 전지 모듈
KR102182618B1 (ko) * 2018-07-12 2020-11-24 (주)프런티어에너지솔루션 페로브스카이트 태양 전지 모듈 및 페로브스카이트 태양 전지 모듈 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
CN100456502C (zh) * 2004-04-09 2009-01-28 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
US20090065060A1 (en) * 2005-05-24 2009-03-12 Honda Motor Co., Ltd. Chalcopyrite type solar cell

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JP2002319686A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Ind Co Ltd 集積型薄膜太陽電池の製造方法
JP4730740B2 (ja) * 2006-01-30 2011-07-20 本田技研工業株式会社 太陽電池およびその製造方法
KR101047941B1 (ko) * 2007-10-31 2011-07-11 주식회사 엘지화학 Ｃｉ(ｇ)ｓ 태양전지 후면 전극의 제조방법
KR20100006205A (ko) * 2008-07-09 2010-01-19 (주)텔리오솔라코리아 Ｃｉｇｓ 태양전지 모듈 및 그 제조방법
EP2200097A1 (en) * 2008-12-16 2010-06-23 Saint-Gobain Glass France S.A. Method of manufacturing a photovoltaic device and system for patterning an object
JP4782855B2 (ja) * 2009-03-12 2011-09-28 昭和シェル石油株式会社 化合物系薄膜太陽電池、及びその製造方法
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置
JP5602700B2 (ja) * 2010-11-02 2014-10-08 富士フイルム株式会社 光電変換素子およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100456502C (zh) * 2004-04-09 2009-01-28 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
US20090065060A1 (en) * 2005-05-24 2009-03-12 Honda Motor Co., Ltd. Chalcopyrite type solar cell
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same

Also Published As

Publication number Publication date
KR101173401B1 (ko) 2012-08-10
EP2656395A4 (en) 2017-06-21
EP2656395A1 (en) 2013-10-30
WO2012102451A1 (en) 2012-08-02
KR20120085573A (ko) 2012-08-01
JP5901656B2 (ja) 2016-04-13
US20130000700A1 (en) 2013-01-03
JP2014503127A (ja) 2014-02-06
CN103098231A (zh) 2013-05-08

Similar Documents

Publication Publication Date Title
CN103098231B (zh) 太阳能电池及其制造方法
CN102844879B (zh) 太阳能电池设备及其制造方法
CN103296093A (zh) 太阳能电池及其制造方法
US9818897B2 (en) Device for generating solar power and method for manufacturing same
CN102484156A (zh) 太阳能电池设备及其制造方法
CN104272470B (zh) 太阳能电池及其制造方法
CN103988317B (zh) 太阳能电池及太阳能电池模块
CN103907199B (zh) 太阳能电池及其制备方法
CN106876510B (zh) 太阳能电池装置
KR101382898B1 (ko) 씨스루형 태양전지 모듈 및 이의 제조방법
CN104254926B (zh) 光伏装置
CN102714243A (zh) 太阳能光伏设备及其制造方法
CN103069574B (zh) 光伏发电设备及其制造方法
KR20110043358A (ko) 태양전지 및 이의 제조방법
KR20110035733A (ko) 태양전지 및 이의 제조방법
CN103069577B (zh) 太阳能电池及其制造方法
US20130025676A1 (en) Solar cell and manufacturing method of the same
CN104115278B (zh) 太阳能电池及其制造方法
CN105723522A (zh) 太阳能电池及其制造方法
KR101306525B1 (ko) 태양전지 모듈 및 이의 제조방법
KR20120085577A (ko) 태양전지 및 그의 제조방법
CN104067398A (zh) 太阳能电池及其制造方法
CN104380484A (zh) 太阳能电池和用于制造太阳能电池的方法
CN102844880A (zh) 太阳能发电装置及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160803

Termination date: 20181006