KR101173401B1 - 태양전지 및 그의 제조방법 - Google Patents

태양전지 및 그의 제조방법 Download PDF

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Publication number
KR101173401B1
KR101173401B1 KR1020110006989A KR20110006989A KR101173401B1 KR 101173401 B1 KR101173401 B1 KR 101173401B1 KR 1020110006989 A KR1020110006989 A KR 1020110006989A KR 20110006989 A KR20110006989 A KR 20110006989A KR 101173401 B1 KR101173401 B1 KR 101173401B1
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KR
South Korea
Prior art keywords
layer
back electrode
light absorbing
electrode layer
diffusion barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110006989A
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English (en)
Korean (ko)
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KR20120085573A (ko
Inventor
이동근
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110006989A priority Critical patent/KR101173401B1/ko
Priority to PCT/KR2011/007397 priority patent/WO2012102451A1/en
Priority to JP2013550372A priority patent/JP5901656B2/ja
Priority to US13/634,440 priority patent/US20130000700A1/en
Priority to EP11855921.0A priority patent/EP2656395A4/en
Priority to CN201180042768.XA priority patent/CN103098231B/zh
Publication of KR20120085573A publication Critical patent/KR20120085573A/ko
Application granted granted Critical
Publication of KR101173401B1 publication Critical patent/KR101173401B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
KR1020110006989A 2011-01-24 2011-01-24 태양전지 및 그의 제조방법 Expired - Fee Related KR101173401B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110006989A KR101173401B1 (ko) 2011-01-24 2011-01-24 태양전지 및 그의 제조방법
PCT/KR2011/007397 WO2012102451A1 (en) 2011-01-24 2011-10-06 Solar cell and manufacturing method of the same
JP2013550372A JP5901656B2 (ja) 2011-01-24 2011-10-06 太陽電池およびその製造方法｛ｓｏｌａｒｃｅｌｌａｎｄｍａｎｕｆａｃｔｕｒｉｎｇｍｅｔｈｏｄｏｆｔｈｅｓａｍｅ｝
US13/634,440 US20130000700A1 (en) 2011-01-24 2011-10-06 Solar cell and manufacturing method of the same
EP11855921.0A EP2656395A4 (en) 2011-01-24 2011-10-06 Solar cell and manufacturing method of the same
CN201180042768.XA CN103098231B (zh) 2011-01-24 2011-10-06 太阳能电池及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110006989A KR101173401B1 (ko) 2011-01-24 2011-01-24 태양전지 및 그의 제조방법

Publications (2)

Publication Number Publication Date
KR20120085573A KR20120085573A (ko) 2012-08-01
KR101173401B1 true KR101173401B1 (ko) 2012-08-10

Family

ID=46581003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110006989A Expired - Fee Related KR101173401B1 (ko) 2011-01-24 2011-01-24 태양전지 및 그의 제조방법

Country Status (6)

Country Link
US (1) US20130000700A1 (enExample)
EP (1) EP2656395A4 (enExample)
JP (1) JP5901656B2 (enExample)
KR (1) KR101173401B1 (enExample)
CN (1) CN103098231B (enExample)
WO (1) WO2012102451A1 (enExample)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US7634584B2 (en) 2005-04-27 2009-12-15 Solarflare Communications, Inc. Packet validation in virtual network interface architecture
JP5789716B2 (ja) * 2011-06-10 2015-10-07 ポスコ 太陽電池基板とその製造方法及びこれを用いた太陽電池
US8763018B2 (en) 2011-08-22 2014-06-24 Solarflare Communications, Inc. Modifying application behaviour
US9391840B2 (en) 2012-05-02 2016-07-12 Solarflare Communications, Inc. Avoiding delayed data
US9391841B2 (en) 2012-07-03 2016-07-12 Solarflare Communications, Inc. Fast linkup arbitration
US9246039B2 (en) 2012-10-12 2016-01-26 International Business Machines Corporation Solar cell with reduced absorber thickness and reduced back surface recombination
CN103904233B (zh) * 2012-12-25 2016-04-20 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
US10742604B2 (en) 2013-04-08 2020-08-11 Xilinx, Inc. Locked down network interface
US9426124B2 (en) 2013-04-08 2016-08-23 Solarflare Communications, Inc. Locked down network interface
KR20140141791A (ko) * 2013-05-30 2014-12-11 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
EP2809033B1 (en) 2013-05-30 2018-03-21 Solarflare Communications Inc Packet capture in a network
US10394751B2 (en) 2013-11-06 2019-08-27 Solarflare Communications, Inc. Programmed input/output mode
US20150206994A1 (en) * 2014-01-23 2015-07-23 Tsmc Solar Ltd. Solar cell front contact with thickness gradient
US9876049B2 (en) 2014-12-05 2018-01-23 Seiko Epson Corporation Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus
CN106024937A (zh) * 2016-06-23 2016-10-12 盐城普兰特新能源有限公司 一种cigs基薄膜太阳能电池及其制备方法
KR102089558B1 (ko) * 2018-07-11 2020-03-16 주식회사 프런티어에너지솔루션 페로브스카이트 태양 전지 모듈
KR102182618B1 (ko) * 2018-07-12 2020-11-24 (주)프런티어에너지솔루션 페로브스카이트 태양 전지 모듈 및 페로브스카이트 태양 전지 모듈 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JP2002319686A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Ind Co Ltd 集積型薄膜太陽電池の製造方法
CN100456502C (zh) * 2004-04-09 2009-01-28 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
JP4681352B2 (ja) * 2005-05-24 2011-05-11 本田技研工業株式会社 カルコパイライト型太陽電池
JP4730740B2 (ja) * 2006-01-30 2011-07-20 本田技研工業株式会社 太陽電池およびその製造方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
KR101047941B1 (ko) * 2007-10-31 2011-07-11 주식회사 엘지화학 Ｃｉ(ｇ)ｓ 태양전지 후면 전극의 제조방법
KR20100006205A (ko) * 2008-07-09 2010-01-19 (주)텔리오솔라코리아 Ｃｉｇｓ 태양전지 모듈 및 그 제조방법
EP2200097A1 (en) * 2008-12-16 2010-06-23 Saint-Gobain Glass France S.A. Method of manufacturing a photovoltaic device and system for patterning an object
JP4782855B2 (ja) * 2009-03-12 2011-09-28 昭和シェル石油株式会社 化合物系薄膜太陽電池、及びその製造方法
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置
JP5602700B2 (ja) * 2010-11-02 2014-10-08 富士フイルム株式会社 光電変換素子およびその製造方法

Also Published As

Publication number Publication date
WO2012102451A1 (en) 2012-08-02
CN103098231B (zh) 2016-08-03
JP5901656B2 (ja) 2016-04-13
JP2014503127A (ja) 2014-02-06
CN103098231A (zh) 2013-05-08
KR20120085573A (ko) 2012-08-01
EP2656395A4 (en) 2017-06-21
EP2656395A1 (en) 2013-10-30
US20130000700A1 (en) 2013-01-03

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