CN103098212B - 高密度闸流管随机存取存储器装置及方法 - Google Patents

高密度闸流管随机存取存储器装置及方法 Download PDF

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Publication number
CN103098212B
CN103098212B CN201180042303.4A CN201180042303A CN103098212B CN 103098212 B CN103098212 B CN 103098212B CN 201180042303 A CN201180042303 A CN 201180042303A CN 103098212 B CN103098212 B CN 103098212B
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China
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type
doped semiconductor
memory cell
substrate
semiconductor substrate
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CN201180042303.4A
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English (en)
Chinese (zh)
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CN103098212A (zh
Inventor
苏拉吉·J·马修
钱德拉·穆利
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

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  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
  • Non-Volatile Memory (AREA)
CN201180042303.4A 2010-07-19 2011-07-19 高密度闸流管随机存取存储器装置及方法 Active CN103098212B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/838,803 2010-07-19
US12/838,803 US8455919B2 (en) 2010-07-19 2010-07-19 High density thyristor random access memory device and method
PCT/US2011/044546 WO2012012435A2 (en) 2010-07-19 2011-07-19 High density thyristor random access memory device and method

Publications (2)

Publication Number Publication Date
CN103098212A CN103098212A (zh) 2013-05-08
CN103098212B true CN103098212B (zh) 2014-08-06

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CN201180042303.4A Active CN103098212B (zh) 2010-07-19 2011-07-19 高密度闸流管随机存取存储器装置及方法

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US (2) US8455919B2 (https=)
JP (1) JP5686896B2 (https=)
KR (1) KR101875677B1 (https=)
CN (1) CN103098212B (https=)
TW (1) TWI481015B (https=)
WO (1) WO2012012435A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method
US8739010B2 (en) * 2010-11-19 2014-05-27 Altera Corporation Memory array with redundant bits and memory element voting circuits
US9510564B2 (en) * 2012-05-22 2016-12-06 Doskocil Manufacturing Company, Inc. Treat dispenser
CA2903945C (en) * 2013-03-04 2018-05-01 Nippon Steel & Sumitomo Metal Corporation Impact-absorbing component
CA2917913A1 (en) * 2013-07-09 2015-01-15 United Technologies Corporation Reinforced plated polymers
TWI572018B (zh) * 2015-10-28 2017-02-21 旺宏電子股份有限公司 記憶體元件及其製作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953953B1 (en) * 2002-10-01 2005-10-11 T-Ram, Inc. Deep trench isolation for thyristor-based semiconductor device
CN101300665A (zh) * 2005-10-31 2008-11-05 美光科技公司 基于隐藏式沟道负微分电阻的存储器单元

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2002216482A (ja) * 2000-11-17 2002-08-02 Toshiba Corp 半導体メモリ集積回路
US6906354B2 (en) 2001-06-13 2005-06-14 International Business Machines Corporation T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
JP2003030980A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体記憶装置
US6686612B1 (en) 2002-10-01 2004-02-03 T-Ram, Inc. Thyristor-based device adapted to inhibit parasitic current
US6980457B1 (en) 2002-11-06 2005-12-27 T-Ram, Inc. Thyristor-based device having a reduced-resistance contact to a buried emitter region
US7195959B1 (en) * 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US7081378B2 (en) 2004-01-05 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Horizontal TRAM and method for the fabrication thereof
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
JP4696964B2 (ja) * 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
JP2007067133A (ja) * 2005-08-31 2007-03-15 Sony Corp 半導体装置
US20090179262A1 (en) 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US7750392B2 (en) * 2008-03-03 2010-07-06 Aptina Imaging Corporation Embedded cache memory in image sensors
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953953B1 (en) * 2002-10-01 2005-10-11 T-Ram, Inc. Deep trench isolation for thyristor-based semiconductor device
CN101300665A (zh) * 2005-10-31 2008-11-05 美光科技公司 基于隐藏式沟道负微分电阻的存储器单元

Also Published As

Publication number Publication date
TWI481015B (zh) 2015-04-11
WO2012012435A2 (en) 2012-01-26
TW201214679A (en) 2012-04-01
CN103098212A (zh) 2013-05-08
KR101875677B1 (ko) 2018-08-02
US20130009208A1 (en) 2013-01-10
JP5686896B2 (ja) 2015-03-18
JP2013536572A (ja) 2013-09-19
WO2012012435A3 (en) 2012-04-19
US20120012892A1 (en) 2012-01-19
KR20130094801A (ko) 2013-08-26
US8754443B2 (en) 2014-06-17
US8455919B2 (en) 2013-06-04

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