CN103095998B - 图像拍摄单元和图像拍摄显示系统 - Google Patents
图像拍摄单元和图像拍摄显示系统 Download PDFInfo
- Publication number
- CN103095998B CN103095998B CN201210436042.0A CN201210436042A CN103095998B CN 103095998 B CN103095998 B CN 103095998B CN 201210436042 A CN201210436042 A CN 201210436042A CN 103095998 B CN103095998 B CN 103095998B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 130
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
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- 238000002601 radiography Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-241036 | 2011-11-02 | ||
| JP2011241036A JP5935293B2 (ja) | 2011-11-02 | 2011-11-02 | 撮像装置および撮像表示システム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103095998A CN103095998A (zh) | 2013-05-08 |
| CN103095998B true CN103095998B (zh) | 2018-01-19 |
Family
ID=48172039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210436042.0A Expired - Fee Related CN103095998B (zh) | 2011-11-02 | 2012-10-26 | 图像拍摄单元和图像拍摄显示系统 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8988569B2 (enExample) |
| JP (1) | JP5935293B2 (enExample) |
| CN (1) | CN103095998B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5935291B2 (ja) | 2011-11-01 | 2016-06-15 | ソニー株式会社 | 撮像装置および撮像表示システム |
| CN103959363B (zh) * | 2011-12-07 | 2016-04-27 | 夏普株式会社 | 光传感器电路的动作方法、以及具备该光传感器电路的显示装置的动作方法 |
| JP5895504B2 (ja) | 2011-12-15 | 2016-03-30 | ソニー株式会社 | 撮像パネルおよび撮像処理システム |
| JP6062800B2 (ja) * | 2013-05-24 | 2017-01-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および撮像表示システム |
| US9548327B2 (en) * | 2014-11-10 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device having a selenium containing photoelectric conversion layer |
| JP6727847B2 (ja) * | 2015-04-24 | 2020-07-22 | キヤノン株式会社 | 放射線撮像装置、放射線撮像システム及び放射線撮像装置の制御方法 |
| JP2018082295A (ja) | 2016-11-16 | 2018-05-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
| US11054312B2 (en) * | 2018-01-29 | 2021-07-06 | University Of Central Florida Research Foundation, Inc. | Radiation-defect mitigation in InAs/GaSb strained-layer superlattice infrared detectors and related methods |
| KR102609647B1 (ko) | 2018-02-07 | 2023-12-05 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 및 촬상 장치 |
| CN113138695B (zh) * | 2021-04-20 | 2024-03-15 | 京东方科技集团股份有限公司 | 一种探测基板及其信号采集方法、显示装置 |
| JP2023027000A (ja) * | 2021-08-16 | 2023-03-01 | 株式会社ジャパンディスプレイ | 検出装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6801253B1 (en) * | 1997-03-10 | 2004-10-05 | Sony Corporation | Solid-state image sensor and method of driving same |
| JP2005033623A (ja) * | 2003-07-08 | 2005-02-03 | Sharp Corp | 固体撮像素子 |
| CN100384227C (zh) * | 1997-08-15 | 2008-04-23 | 索尼株式会社 | 固态图象传感器和驱动该传感器的方法 |
| JP2010011033A (ja) * | 2008-06-26 | 2010-01-14 | Epson Imaging Devices Corp | 光電変換装置及び放射線検出装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227900A (en) | 1990-03-20 | 1993-07-13 | Canon Kabushiki Kaisha | Method of driving ferroelectric liquid crystal element |
| US5920070A (en) * | 1996-11-27 | 1999-07-06 | General Electric Company | Solid state area x-ray detector with adjustable bias |
| JP2011030060A (ja) * | 2009-07-28 | 2011-02-10 | Olympus Corp | 固体撮像装置および撮像方法 |
| JP5721994B2 (ja) * | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
| US8189402B2 (en) | 2010-06-16 | 2012-05-29 | Ememory Technology Inc. | Sensing circuit for memory cell supplied with low power |
| JP2012085021A (ja) * | 2010-10-08 | 2012-04-26 | Konica Minolta Medical & Graphic Inc | 放射線画像撮影装置 |
| CN103828342B (zh) * | 2011-09-29 | 2016-12-21 | 佳能株式会社 | 成像设备,成像系统,和控制成像设备的方法 |
| JP5935291B2 (ja) | 2011-11-01 | 2016-06-15 | ソニー株式会社 | 撮像装置および撮像表示システム |
-
2011
- 2011-11-02 JP JP2011241036A patent/JP5935293B2/ja not_active Expired - Fee Related
-
2012
- 2012-10-26 US US13/661,103 patent/US8988569B2/en not_active Expired - Fee Related
- 2012-10-26 CN CN201210436042.0A patent/CN103095998B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6801253B1 (en) * | 1997-03-10 | 2004-10-05 | Sony Corporation | Solid-state image sensor and method of driving same |
| CN100384227C (zh) * | 1997-08-15 | 2008-04-23 | 索尼株式会社 | 固态图象传感器和驱动该传感器的方法 |
| JP2005033623A (ja) * | 2003-07-08 | 2005-02-03 | Sharp Corp | 固体撮像素子 |
| JP2010011033A (ja) * | 2008-06-26 | 2010-01-14 | Epson Imaging Devices Corp | 光電変換装置及び放射線検出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8988569B2 (en) | 2015-03-24 |
| JP5935293B2 (ja) | 2016-06-15 |
| US20130107088A1 (en) | 2013-05-02 |
| JP2013098825A (ja) | 2013-05-20 |
| CN103095998A (zh) | 2013-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160912 Address after: Kanagawa Applicant after: SONY semiconductor solutions Address before: Tokyo, Japan, Japan Applicant before: Sony Corp |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180119 Termination date: 20201026 |