CN103081027A - 具有降低的表面电阻的掺杂石墨烯膜 - Google Patents
具有降低的表面电阻的掺杂石墨烯膜 Download PDFInfo
- Publication number
- CN103081027A CN103081027A CN2011800400668A CN201180040066A CN103081027A CN 103081027 A CN103081027 A CN 103081027A CN 2011800400668 A CN2011800400668 A CN 2011800400668A CN 201180040066 A CN201180040066 A CN 201180040066A CN 103081027 A CN103081027 A CN 103081027A
- Authority
- CN
- China
- Prior art keywords
- graphene film
- solution
- film
- oxidation agent
- electron oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 114
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 41
- 230000001965 increasing effect Effects 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 29
- 238000007254 oxidation reaction Methods 0.000 claims description 29
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- XCJXQCUJXDUNDN-UHFFFAOYSA-N chlordene Chemical compound C12C=CCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl XCJXQCUJXDUNDN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007800 oxidant agent Substances 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002717 carbon nanostructure Substances 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- -1 triethyloxonium hexachloroantimonate Chemical compound 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/859,426 US8293607B2 (en) | 2010-08-19 | 2010-08-19 | Doped graphene films with reduced sheet resistance |
US12/859,426 | 2010-08-19 | ||
PCT/EP2011/059413 WO2012022513A1 (en) | 2010-08-19 | 2011-06-07 | Doped graphene films with reduced sheet resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103081027A true CN103081027A (zh) | 2013-05-01 |
CN103081027B CN103081027B (zh) | 2016-01-06 |
Family
ID=44627569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180040066.8A Active CN103081027B (zh) | 2010-08-19 | 2011-06-07 | 具有降低的表面电阻的掺杂石墨烯膜 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8293607B2 (zh) |
JP (1) | JP5753584B2 (zh) |
CN (1) | CN103081027B (zh) |
DE (1) | DE112011102747T5 (zh) |
GB (1) | GB2496347B (zh) |
WO (1) | WO2012022513A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103915126A (zh) * | 2012-12-31 | 2014-07-09 | 乐金显示有限公司 | 导电材料、制造电极的方法和具有其的显示器件 |
CN104658731A (zh) * | 2014-12-22 | 2015-05-27 | 中国科学院重庆绿色智能技术研究院 | 一种稳定掺杂降低石墨烯薄膜方块电阻的方法 |
CN111229061A (zh) * | 2020-01-17 | 2020-06-05 | 西安交通大学 | 一种多孔石墨烯分离膜及其制备方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101271249B1 (ko) * | 2010-12-22 | 2013-06-10 | 한국과학기술원 | 질소가 도핑된 투명 그래핀 필름 및 이의 제조방법 |
US9177688B2 (en) * | 2011-11-22 | 2015-11-03 | International Business Machines Corporation | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor |
WO2015126139A1 (en) | 2014-02-19 | 2015-08-27 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
US10006910B2 (en) | 2014-12-18 | 2018-06-26 | Agilome, Inc. | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same |
US9859394B2 (en) | 2014-12-18 | 2018-01-02 | Agilome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
US10020300B2 (en) | 2014-12-18 | 2018-07-10 | Agilome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
US9618474B2 (en) | 2014-12-18 | 2017-04-11 | Edico Genome, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
WO2016100049A1 (en) | 2014-12-18 | 2016-06-23 | Edico Genome Corporation | Chemically-sensitive field effect transistor |
US9857328B2 (en) | 2014-12-18 | 2018-01-02 | Agilome, Inc. | Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same |
US11362431B1 (en) * | 2015-06-16 | 2022-06-14 | Oceanit Laboratories, Inc. | Optically transparent radar absorbing material (RAM) |
US10163540B2 (en) * | 2015-12-03 | 2018-12-25 | Nanotek Instruments, Inc. | Production process for highly conducting and oriented graphene film |
US10001516B2 (en) | 2016-02-03 | 2018-06-19 | International Business Machines Corporation | Reducing noise and enhancing readout throughput in sensor array |
US10961125B2 (en) | 2016-02-15 | 2021-03-30 | Tokyo Institute Of Technology | SP2 carbon-containing composition, graphene quantum dot-containing composition, methods of manufacturing thereof, and method of peeling graphite |
US10811539B2 (en) | 2016-05-16 | 2020-10-20 | Nanomedical Diagnostics, Inc. | Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids |
SE541515C2 (en) | 2017-12-22 | 2019-10-22 | Graphensic Ab | Assembling of molecules on a 2D material and an electronic device |
JP7406109B2 (ja) * | 2019-02-01 | 2023-12-27 | 日亜化学工業株式会社 | 非水系二次電池用電極活物質及びその製造方法 |
US20220208421A1 (en) * | 2020-03-20 | 2022-06-30 | Chapman University | IDEAL DIAMAGNETIC RESPONSE OF A GRAPHENE-n-HEPTANE-PERMALLOY SYSTEM |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060038179A1 (en) * | 2004-03-02 | 2006-02-23 | Ali Afzali-Ardakani | Method and apparatus for solution processed doping of carbon nanotube |
US20080001141A1 (en) * | 2006-06-28 | 2008-01-03 | Unidym, Inc. | Doped Transparent and Conducting Nanostructure Networks |
US20090146111A1 (en) * | 2007-12-07 | 2009-06-11 | Samsung Electronics Co., Ltd. | Reduced graphene oxide doped with dopant, thin layer and transparent electrode |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5186919A (en) * | 1988-11-21 | 1993-02-16 | Battelle Memorial Institute | Method for producing thin graphite flakes with large aspect ratios |
JP2003231097A (ja) * | 2002-02-08 | 2003-08-19 | Mitsubishi Gas Chem Co Inc | 炭素からなる骨格を持つ薄膜状粒子を基板に載せた構造物およびその作製方法 |
US20050221016A1 (en) | 2003-12-31 | 2005-10-06 | Glatkowski Paul J | Methods for modifying carbon nanotube structures to enhance coating optical and electronic properties of transparent conductive coatings |
CN101437663B (zh) * | 2004-11-09 | 2013-06-19 | 得克萨斯大学体系董事会 | 纳米纤维带和板以及加捻和无捻纳米纤维纱线的制造和应用 |
JP3963393B2 (ja) * | 2005-03-01 | 2007-08-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | カーボンナノチューブ電界効果トランジスタ及びこれの製造方法 |
WO2008057615A2 (en) | 2006-03-03 | 2008-05-15 | Eikos, Inc. | Highly transparent and conductive carbon nanotube coatings |
KR101384665B1 (ko) | 2007-09-13 | 2014-04-15 | 성균관대학교산학협력단 | 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지 |
US20090117020A1 (en) * | 2007-11-05 | 2009-05-07 | Board Of Regents, The University Of Texas System | Rapid microwave-solvothermal synthesis and surface modification of nanostructured phospho-olivine cathodes for lithium ion batteries |
JP5109648B2 (ja) * | 2007-12-27 | 2012-12-26 | 富士通株式会社 | 層状炭素構造体の製造方法および半導体装置の製造方法 |
US7786466B2 (en) | 2008-01-11 | 2010-08-31 | International Business Machines Corporation | Carbon nanotube based integrated semiconductor circuit |
WO2009132165A2 (en) * | 2008-04-24 | 2009-10-29 | President And Fellows Of Harvard College | Microfabrication of carbon-based devices such as gate-controlled graphene devices |
US20110130292A1 (en) * | 2008-07-25 | 2011-06-02 | Yasushi Kawashima | Room-temperature superconductor, perfect conductor, protonic conductor, ferromagnetic body, electromagnetic coil, and method for producing these materials |
US8287699B2 (en) * | 2009-07-27 | 2012-10-16 | Nanotek Instruments, Inc. | Production of chemically functionalized nano graphene materials |
US10164135B2 (en) * | 2009-08-07 | 2018-12-25 | Guardian Glass, LLC | Electronic device including graphene-based layer(s), and/or method or making the same |
US20110048508A1 (en) | 2009-08-26 | 2011-03-03 | International Business Machines Corporation | Doping of Carbon Nanotube Films for the Fabrication of Transparent Electrodes |
JP5493637B2 (ja) * | 2009-09-18 | 2014-05-14 | 富士電機株式会社 | グラフェン薄膜の製造方法とグラフェン薄膜 |
US9017756B2 (en) * | 2010-01-07 | 2015-04-28 | Nanotek Instruments, Inc. | Continuous process for producing spacer-modified nano graphene electrodes for supercapacitors |
US9640334B2 (en) * | 2010-01-25 | 2017-05-02 | Nanotek Instruments, Inc. | Flexible asymmetric electrochemical cells using nano graphene platelet as an electrode material |
CN103038835A (zh) | 2010-03-08 | 2013-04-10 | 威廉马歇莱思大学 | 基于石墨烯的透明电极和网格混合结构 |
JP2012082093A (ja) * | 2010-10-08 | 2012-04-26 | Nippon Telegr & Teleph Corp <Ntt> | 炭素薄膜の形成方法 |
-
2010
- 2010-08-19 US US12/859,426 patent/US8293607B2/en active Active
-
2011
- 2011-06-07 JP JP2013524387A patent/JP5753584B2/ja not_active Expired - Fee Related
- 2011-06-07 GB GB1303286.7A patent/GB2496347B/en not_active Expired - Fee Related
- 2011-06-07 CN CN201180040066.8A patent/CN103081027B/zh active Active
- 2011-06-07 WO PCT/EP2011/059413 patent/WO2012022513A1/en active Application Filing
- 2011-06-07 DE DE112011102747T patent/DE112011102747T5/de active Pending
-
2012
- 2012-09-14 US US13/616,418 patent/US8853034B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060038179A1 (en) * | 2004-03-02 | 2006-02-23 | Ali Afzali-Ardakani | Method and apparatus for solution processed doping of carbon nanotube |
US20080001141A1 (en) * | 2006-06-28 | 2008-01-03 | Unidym, Inc. | Doped Transparent and Conducting Nanostructure Networks |
US20090146111A1 (en) * | 2007-12-07 | 2009-06-11 | Samsung Electronics Co., Ltd. | Reduced graphene oxide doped with dopant, thin layer and transparent electrode |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103915126A (zh) * | 2012-12-31 | 2014-07-09 | 乐金显示有限公司 | 导电材料、制造电极的方法和具有其的显示器件 |
CN103915126B (zh) * | 2012-12-31 | 2016-06-29 | 乐金显示有限公司 | 导电材料、制造电极的方法和具有其的显示器件 |
US10162385B2 (en) | 2012-12-31 | 2018-12-25 | Lg Display Co., Ltd. | Conductive material, method of fabricating electrode, and display device having the same |
CN104658731A (zh) * | 2014-12-22 | 2015-05-27 | 中国科学院重庆绿色智能技术研究院 | 一种稳定掺杂降低石墨烯薄膜方块电阻的方法 |
CN104658731B (zh) * | 2014-12-22 | 2018-02-16 | 中国科学院重庆绿色智能技术研究院 | 一种稳定掺杂降低石墨烯薄膜方块电阻的方法 |
CN111229061A (zh) * | 2020-01-17 | 2020-06-05 | 西安交通大学 | 一种多孔石墨烯分离膜及其制备方法 |
CN111229061B (zh) * | 2020-01-17 | 2021-11-19 | 西安交通大学 | 一种多孔石墨烯分离膜及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US8293607B2 (en) | 2012-10-23 |
DE112011102747T5 (de) | 2013-07-11 |
JP5753584B2 (ja) | 2015-07-22 |
GB2496347A (en) | 2013-05-08 |
JP2013536149A (ja) | 2013-09-19 |
US8853034B2 (en) | 2014-10-07 |
GB2496347B (en) | 2017-03-08 |
GB201303286D0 (en) | 2013-04-10 |
US20120045865A1 (en) | 2012-02-23 |
US20130011960A1 (en) | 2013-01-10 |
CN103081027B (zh) | 2016-01-06 |
WO2012022513A1 (en) | 2012-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103081027A (zh) | 具有降低的表面电阻的掺杂石墨烯膜 | |
Yu et al. | Recent development of carbon nanotube transparent conductive films | |
Zhang et al. | Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes | |
Song et al. | Challenges and opportunities for graphene as transparent conductors in optoelectronics | |
Li et al. | Anomalous behaviors of graphene transparent conductors in graphene–silicon heterojunction solar cells | |
Huang et al. | Graphene‐based electrodes | |
Huang et al. | Effective work function modulation of graphene/carbon nanotube composite films as transparent cathodes for organic optoelectronics | |
Lim et al. | Simple brush-painting of flexible and transparent Ag nanowire network electrodes as an alternative ITO anode for cost-efficient flexible organic solar cells | |
Guo et al. | Graphene based materials: enhancing solar energy harvesting | |
Tune et al. | Carbon nanotube‐silicon solar cells | |
EP1914781B1 (en) | Transparent carbon nanotube electrode using conductive dispersant and production method thereof | |
Zhu et al. | Anthocyanin-sensitized solar cells using carbon nanotube films as counter electrodes | |
CA2925436C (en) | Methods for producing thin film charge selective transport layers | |
Wan et al. | Controlled Electrochemical Deposition of Large‐Area MoS2 on Graphene for High‐Responsivity Photodetectors | |
Di et al. | Aligned carbon nanotubes for high‐efficiency Schottky solar cells | |
US20110048508A1 (en) | Doping of Carbon Nanotube Films for the Fabrication of Transparent Electrodes | |
Lee et al. | Influence of nonionic surfactant-modified PEDOT: PSS on graphene | |
Wageh et al. | Digital printing of a novel electrode for stable flexible organic solar cells with a power conversion efficiency of 8.5% | |
US20130025662A1 (en) | Water Soluble Dopant for Carbon Films | |
Kwon et al. | Eco-friendly graphene synthesis on Cu foil electroplated by reusing Cu etchants | |
Rasal et al. | Composition, Morphology, and Interface Engineering of 3D Cauliflower‐Like Porous Carbon‐Wrapped Metal Chalcogenides as Advanced Electrocatalysts for Quantum Dot‐Sensitized Solar Cells | |
WO2014030534A1 (ja) | グラフェン積層体およびその製造方法 | |
CN103310905A (zh) | 制造纳米复合导电薄膜的方法及其纳米复合导电薄膜 | |
Lin et al. | Cationic nitrogen-doped graphene as a p-type modifier for high-performance PEDOT: PSS hole transporters in organic solar cells | |
Kim et al. | Size Fractionation of Graphene Oxide via Solvent‐Mediated Consecutive Charge Manipulation and Investigation of the Size Effect as Hole Transporting Layer in Perovskite Solar Cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171031 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171031 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |