CN103050597A - 氮化物半导体生长用基板及其制造方法、氮化物半导体外延基板、以及氮化物半导体元件 - Google Patents
氮化物半导体生长用基板及其制造方法、氮化物半导体外延基板、以及氮化物半导体元件 Download PDFInfo
- Publication number
- CN103050597A CN103050597A CN2012103909229A CN201210390922A CN103050597A CN 103050597 A CN103050597 A CN 103050597A CN 2012103909229 A CN2012103909229 A CN 2012103909229A CN 201210390922 A CN201210390922 A CN 201210390922A CN 103050597 A CN103050597 A CN 103050597A
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- China
- Prior art keywords
- nitride semiconductor
- protuberance
- substrate
- interarea
- sapphire substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 108
- 230000012010 growth Effects 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 68
- 239000010980 sapphire Substances 0.000 claims abstract description 68
- 230000003746 surface roughness Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 28
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 45
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000011247 coating layer Substances 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-228307 | 2011-10-17 | ||
JP2011228307A JP5724819B2 (ja) | 2011-10-17 | 2011-10-17 | 窒化物半導体成長用基板及びその製造方法、窒化物半導体エピタキシャル基板、並びに窒化物半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103050597A true CN103050597A (zh) | 2013-04-17 |
CN103050597B CN103050597B (zh) | 2017-03-01 |
Family
ID=48063170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210390922.9A Active CN103050597B (zh) | 2011-10-17 | 2012-10-15 | 氮化物半导体生长用基板及其制造方法、氮化物半导体外延基板、以及氮化物半导体元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130092950A1 (zh) |
JP (1) | JP5724819B2 (zh) |
CN (1) | CN103050597B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377286A (zh) * | 2013-08-15 | 2015-02-25 | 中国科学院物理研究所 | 三维微米凹球的制备方法 |
CN104576840A (zh) * | 2013-10-15 | 2015-04-29 | 江苏积汇新能源科技有限公司 | 在硅衬底上制备氮化镓led的方法 |
CN104810443A (zh) * | 2015-04-30 | 2015-07-29 | 华南理工大学 | 一种弧形六角星锥图形化led衬底及led芯片 |
CN108474138A (zh) * | 2015-11-10 | 2018-08-31 | 学校法人关西学院 | 半导体晶圆的制造方法 |
CN112236874A (zh) * | 2018-06-05 | 2021-01-15 | 株式会社小糸制作所 | 半导体生长用基板、半导体元件、半导体发光元件以及半导体元件制造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0752060A (ja) * | 1993-08-13 | 1995-02-28 | Matsushita Electric Works Ltd | インパクトレンチ |
WO2014041463A2 (en) * | 2012-09-17 | 2014-03-20 | Koninklijke Philips N.V. | Light emitting device including shaped substrate |
TWM459528U (zh) * | 2013-02-26 | 2013-08-11 | Phecda Technology Co Ltd | 發光元件基板以及發光元件 |
TWM460410U (zh) * | 2013-02-26 | 2013-08-21 | Phecda Technology Co Ltd | 發光元件基板以及發光元件 |
JP6028690B2 (ja) * | 2013-08-06 | 2016-11-16 | 豊田合成株式会社 | Iii 族窒化物半導体発光素子 |
TW201530757A (zh) * | 2013-12-30 | 2015-08-01 | Veeco Instr Inc | 用於以結晶氮化物為主之裝置中的工程基板 |
JP6248786B2 (ja) * | 2014-04-25 | 2017-12-20 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
DE102014108301A1 (de) * | 2014-06-12 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
JP6415909B2 (ja) | 2014-09-17 | 2018-10-31 | 住友化学株式会社 | 窒化物半導体テンプレートの製造方法 |
JP6375890B2 (ja) * | 2014-11-18 | 2018-08-22 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
US9748344B2 (en) | 2015-07-08 | 2017-08-29 | Coorstek Kk | Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride |
US9812322B2 (en) * | 2015-08-26 | 2017-11-07 | Epileds Technologies, Inc. | Sapphire substrate with patterned structure |
JP2017069463A (ja) * | 2015-09-30 | 2017-04-06 | 旭化成株式会社 | 半導体発光素子及びその製造方法 |
JP6699063B2 (ja) * | 2016-02-26 | 2020-05-27 | 旭化成株式会社 | サファイア基板及び窒化物半導体基板 |
JP6443524B2 (ja) * | 2017-11-22 | 2018-12-26 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
JP2020035860A (ja) * | 2018-08-29 | 2020-03-05 | 固美實国際股▲ふん▼有限公司 | 発光ダイオードに用いるパターン化基板 |
JP6683237B2 (ja) * | 2018-11-28 | 2020-04-15 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP7381249B2 (ja) * | 2019-02-13 | 2023-11-15 | 住友化学株式会社 | 窒化アルミニウム積層部材および発光デバイス |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050577A (ja) * | 2000-08-03 | 2002-02-15 | Namiki Precision Jewel Co Ltd | サファイヤ基板とその製造方法 |
US20080303042A1 (en) * | 2006-12-21 | 2008-12-11 | Nichia Corporation | Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same |
CN102184846A (zh) * | 2011-04-22 | 2011-09-14 | 东莞市中镓半导体科技有限公司 | 一种图形化衬底的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001080311A1 (en) * | 2000-04-17 | 2001-10-25 | Virginia Commonwealth University | Defect reduction in gan and related materials |
US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US6936851B2 (en) * | 2003-03-21 | 2005-08-30 | Tien Yang Wang | Semiconductor light-emitting device and method for manufacturing the same |
US20080277686A1 (en) * | 2007-05-08 | 2008-11-13 | Huga Optotech Inc. | Light emitting device and method for making the same |
US20090278233A1 (en) * | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
JP2012064811A (ja) * | 2010-09-16 | 2012-03-29 | Toshiba Corp | 半導体素子の製造方法 |
-
2011
- 2011-10-17 JP JP2011228307A patent/JP5724819B2/ja active Active
-
2012
- 2012-09-13 US US13/615,421 patent/US20130092950A1/en not_active Abandoned
- 2012-10-15 CN CN201210390922.9A patent/CN103050597B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050577A (ja) * | 2000-08-03 | 2002-02-15 | Namiki Precision Jewel Co Ltd | サファイヤ基板とその製造方法 |
US20080303042A1 (en) * | 2006-12-21 | 2008-12-11 | Nichia Corporation | Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same |
CN102184846A (zh) * | 2011-04-22 | 2011-09-14 | 东莞市中镓半导体科技有限公司 | 一种图形化衬底的制备方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377286A (zh) * | 2013-08-15 | 2015-02-25 | 中国科学院物理研究所 | 三维微米凹球的制备方法 |
CN104576840A (zh) * | 2013-10-15 | 2015-04-29 | 江苏积汇新能源科技有限公司 | 在硅衬底上制备氮化镓led的方法 |
CN104810443A (zh) * | 2015-04-30 | 2015-07-29 | 华南理工大学 | 一种弧形六角星锥图形化led衬底及led芯片 |
CN104810443B (zh) * | 2015-04-30 | 2018-05-15 | 华南理工大学 | 一种弧形六角星锥图形化led衬底及led芯片 |
CN108474138A (zh) * | 2015-11-10 | 2018-08-31 | 学校法人关西学院 | 半导体晶圆的制造方法 |
CN112236874A (zh) * | 2018-06-05 | 2021-01-15 | 株式会社小糸制作所 | 半导体生长用基板、半导体元件、半导体发光元件以及半导体元件制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5724819B2 (ja) | 2015-05-27 |
US20130092950A1 (en) | 2013-04-18 |
CN103050597B (zh) | 2017-03-01 |
JP2013087012A (ja) | 2013-05-13 |
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