CN103043913A - 一种使用可控流体场的玻璃蚀刻设备 - Google Patents
一种使用可控流体场的玻璃蚀刻设备 Download PDFInfo
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- CN103043913A CN103043913A CN2013100226272A CN201310022627A CN103043913A CN 103043913 A CN103043913 A CN 103043913A CN 2013100226272 A CN2013100226272 A CN 2013100226272A CN 201310022627 A CN201310022627 A CN 201310022627A CN 103043913 A CN103043913 A CN 103043913A
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- etching
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CN201310022627.2A CN103043913B (zh) | 2013-01-21 | 2013-01-21 | 一种使用可控流体场的玻璃蚀刻设备 |
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CN201310022627.2A CN103043913B (zh) | 2013-01-21 | 2013-01-21 | 一种使用可控流体场的玻璃蚀刻设备 |
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CN103043913A true CN103043913A (zh) | 2013-04-17 |
CN103043913B CN103043913B (zh) | 2015-10-21 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108227257A (zh) * | 2018-02-06 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种减薄装置及减薄方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000147474A (ja) * | 1998-11-02 | 2000-05-26 | System Technology Inc | 薄膜トランジスタ液晶ディスプレイ用ガラスの自動エッチング装置 |
CN100336182C (zh) * | 2002-09-17 | 2007-09-05 | m.FSI株式会社 | 蚀刻液的再生方法、蚀刻方法和蚀刻系统 |
CN101140374A (zh) * | 2006-09-08 | 2008-03-12 | 三星电子株式会社 | 蚀刻液供应装置、蚀刻装置及蚀刻方法 |
CN101546701A (zh) * | 2008-03-27 | 2009-09-30 | 大日本网屏制造株式会社 | 基板处理装置及基板处理方法 |
CN102653451A (zh) * | 2011-03-01 | 2012-09-05 | 三福化工股份有限公司 | 玻璃基板连续结晶式化学蚀刻方法与设备 |
CN203007131U (zh) * | 2013-01-21 | 2013-06-19 | 汕头市拓捷科技有限公司 | 一种使用可控流体场的玻璃蚀刻设备 |
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2013
- 2013-01-21 CN CN201310022627.2A patent/CN103043913B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000147474A (ja) * | 1998-11-02 | 2000-05-26 | System Technology Inc | 薄膜トランジスタ液晶ディスプレイ用ガラスの自動エッチング装置 |
CN100336182C (zh) * | 2002-09-17 | 2007-09-05 | m.FSI株式会社 | 蚀刻液的再生方法、蚀刻方法和蚀刻系统 |
CN101140374A (zh) * | 2006-09-08 | 2008-03-12 | 三星电子株式会社 | 蚀刻液供应装置、蚀刻装置及蚀刻方法 |
CN101546701A (zh) * | 2008-03-27 | 2009-09-30 | 大日本网屏制造株式会社 | 基板处理装置及基板处理方法 |
CN102653451A (zh) * | 2011-03-01 | 2012-09-05 | 三福化工股份有限公司 | 玻璃基板连续结晶式化学蚀刻方法与设备 |
CN203007131U (zh) * | 2013-01-21 | 2013-06-19 | 汕头市拓捷科技有限公司 | 一种使用可控流体场的玻璃蚀刻设备 |
Non-Patent Citations (1)
Title |
---|
傅建中等: "《微系统原理与技术》", 31 March 2005, 机械工业出版社 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108227257A (zh) * | 2018-02-06 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种减薄装置及减薄方法 |
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CN103043913B (zh) | 2015-10-21 |
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Address after: East Lake village in Guangdong province Haojiang District 515000 Shantou Nanhu Taiwanese Investment Zone Daming Road Patentee after: GUANGDONG TOPJET TECHNOLOGY CO., LTD. Address before: East Lake village in Guangdong province Haojiang District 515000 Shantou Nanhu Taiwanese Investment Zone Daming Road Patentee before: SHANTOU TOPJET TECHNOLOGY CO., LTD. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Glass etching apparatus using controllable fluid fields Effective date of registration: 20170317 Granted publication date: 20151021 Pledgee: Longhu City, Shantou billion letter microfinance Limited Pledgor: GUANGDONG TOPJET TECHNOLOGY CO., LTD. Registration number: 2017440000008 |
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CF01 | Termination of patent right due to non-payment of annual fee |