CN103038886A - 反向偏压下栅极-源极泄漏降低的自对准半导体装置及制作方法 - Google Patents

反向偏压下栅极-源极泄漏降低的自对准半导体装置及制作方法 Download PDF

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Publication number
CN103038886A
CN103038886A CN2011800367015A CN201180036701A CN103038886A CN 103038886 A CN103038886 A CN 103038886A CN 2011800367015 A CN2011800367015 A CN 2011800367015A CN 201180036701 A CN201180036701 A CN 201180036701A CN 103038886 A CN103038886 A CN 103038886A
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layer
source
semi
semiconductor device
conducting material
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CN2011800367015A
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English (en)
Chinese (zh)
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安德鲁·里特诺尔
大卫·C·谢里登
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Pi Co
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SS SC IP LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
CN2011800367015A 2010-05-25 2011-05-20 反向偏压下栅极-源极泄漏降低的自对准半导体装置及制作方法 Pending CN103038886A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34792810P 2010-05-25 2010-05-25
US61/347,928 2010-05-25
PCT/US2011/037275 WO2011149768A2 (en) 2010-05-25 2011-05-20 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Publications (1)

Publication Number Publication Date
CN103038886A true CN103038886A (zh) 2013-04-10

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Family Applications (1)

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CN2011800367015A Pending CN103038886A (zh) 2010-05-25 2011-05-20 反向偏压下栅极-源极泄漏降低的自对准半导体装置及制作方法

Country Status (6)

Country Link
US (2) US8659057B2 (https=)
EP (1) EP2577735A4 (https=)
JP (1) JP2013530527A (https=)
CN (1) CN103038886A (https=)
TW (1) TW201208076A (https=)
WO (1) WO2011149768A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US9006800B2 (en) * 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
US20140145201A1 (en) * 2012-11-29 2014-05-29 Avogy, Inc. Method and system for gallium nitride vertical jfet with separated gate and source
KR102168936B1 (ko) * 2014-03-28 2020-10-22 인텔 코포레이션 수직 반도체 디바이스들을 위한 선택적으로 재성장된 상부 컨택트
US9935102B1 (en) * 2016-10-05 2018-04-03 International Business Machines Corporation Method and structure for improving vertical transistor
US11245027B2 (en) 2020-03-10 2022-02-08 International Business Machines Corporation Bottom source/drain etch with fin-cut-last-VTFET
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region
DE102023208539A1 (de) 2023-08-10 2025-02-13 Infineon Technologies Austria Ag Transistorvorrichtung und verfahren
WO2026049789A1 (en) * 2024-08-26 2026-03-05 Microchip Technology Incorporated Transistor and method for manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
US20070029573A1 (en) * 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
CN101124678A (zh) * 2004-12-01 2008-02-13 半南实验室公司 宽能带隙半导体的常关集成jfet功率开关及其制造方法
US20090068803A1 (en) * 2007-09-10 2009-03-12 Infineon Technologies Austria Ag Method for making an integrated circuit including vertical junction field effect transistors
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984752A (en) 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
JPS53121581A (en) 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Logical element of electrostatic inductive transistor
US4364072A (en) 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4262296A (en) 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
IT1138998B (it) * 1980-03-17 1986-09-17 Gte Laboratories Inc Transistor a induzione statica con strutture di porta perfezionate
US4403396A (en) 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
US4587540A (en) 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length
DE4423068C1 (de) * 1994-07-01 1995-08-17 Daimler Benz Ag Feldeffekt-Transistoren aus SiC und Verfahren zu ihrer Herstellung
US5429956A (en) 1994-09-30 1995-07-04 United Microelectronics Corporation Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel
US5592005A (en) 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
JP4027447B2 (ja) * 1996-04-24 2007-12-26 株式会社ルネサステクノロジ 半導体装置の製造方法
US5903020A (en) 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US5945701A (en) 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
US6362062B1 (en) * 1999-09-08 2002-03-26 Texas Instruments Incorporated Disposable sidewall spacer process for integrated circuits
US6816294B2 (en) 2001-02-16 2004-11-09 Electro Scientific Industries, Inc. On-the-fly beam path error correction for memory link processing
US6967372B2 (en) 2001-04-10 2005-11-22 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers
US6891262B2 (en) 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
US6855970B2 (en) 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP4122880B2 (ja) 2002-07-24 2008-07-23 住友電気工業株式会社 縦型接合型電界効果トランジスタ
JP2004134547A (ja) 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US7138685B2 (en) * 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
JP4524735B2 (ja) 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20050067630A1 (en) 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7187021B2 (en) 2003-12-10 2007-03-06 General Electric Company Static induction transistor
US7407837B2 (en) 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
ATE536635T1 (de) 2004-07-08 2011-12-15 Semisouth Lab Inc Monolithischer vertikal- sperrschichtfeldeffekttransistor und aus siliziumcarbid hergestellte schottky- barrierendiode und herstellungsverfahren dafür
US7279368B2 (en) 2005-03-04 2007-10-09 Cree, Inc. Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
JP4939797B2 (ja) * 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置
US20070148939A1 (en) 2005-12-22 2007-06-28 International Business Machines Corporation Low leakage heterojunction vertical transistors and high performance devices thereof
US8058683B2 (en) 2007-01-18 2011-11-15 Samsung Electronics Co., Ltd. Access device having vertical channel and related semiconductor device and a method of fabricating the access device
US7982239B2 (en) * 2007-06-13 2011-07-19 Northrop Grumman Corporation Power switching transistors
US7994548B2 (en) 2008-05-08 2011-08-09 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US8058655B2 (en) 2008-11-05 2011-11-15 Ss Sc Ip, Llc Vertical junction field effect transistors having sloped sidewalls and methods of making

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
CN101124678A (zh) * 2004-12-01 2008-02-13 半南实验室公司 宽能带隙半导体的常关集成jfet功率开关及其制造方法
US20070029573A1 (en) * 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
US20090068803A1 (en) * 2007-09-10 2009-03-12 Infineon Technologies Austria Ag Method for making an integrated circuit including vertical junction field effect transistors
US20090278177A1 (en) * 2008-05-08 2009-11-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Also Published As

Publication number Publication date
US20110291107A1 (en) 2011-12-01
WO2011149768A2 (en) 2011-12-01
JP2013530527A (ja) 2013-07-25
US20130011979A1 (en) 2013-01-10
EP2577735A2 (en) 2013-04-10
US8659057B2 (en) 2014-02-25
TW201208076A (en) 2012-02-16
WO2011149768A3 (en) 2012-04-05
EP2577735A4 (en) 2014-07-02

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