CN103035514A - Rfldmos中形成厚氧化硅隔离层的制造方法 - Google Patents
Rfldmos中形成厚氧化硅隔离层的制造方法 Download PDFInfo
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377134A (zh) * | 2013-08-14 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 射频横向扩散晶体管无缺陷深场氧隔离的成长方法 |
CN104576393A (zh) * | 2013-10-22 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件的制造方法 |
Citations (6)
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JPH07183254A (ja) * | 1993-12-24 | 1995-07-21 | Nec Corp | 半導体装置の製造方法 |
US6074930A (en) * | 1998-01-07 | 2000-06-13 | Samsung Electronics Co., Ltd. | Method for forming a trench isolation structure comprising an interface treatment for trench liner and a subsequent annealing process |
US20020102800A1 (en) * | 2000-12-11 | 2002-08-01 | Van Den Heuvel Renerus Antonius | Method for the manufacture of a semiconductor device with a field-effect transistor |
CN101459108A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 形成浅沟槽隔离结构的方法和形成浅沟槽的刻蚀方法 |
CN101577241A (zh) * | 2008-05-06 | 2009-11-11 | 上海华虹Nec电子有限公司 | 在三极管和mos管混合电路制备中实现隔离结构的方法 |
CN102117748A (zh) * | 2009-12-31 | 2011-07-06 | 上海华虹Nec电子有限公司 | 双极晶体管的集电区和集电区埋层的制造方法 |
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- 2012-05-16 CN CN201210152488.0A patent/CN103035514B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07183254A (ja) * | 1993-12-24 | 1995-07-21 | Nec Corp | 半導体装置の製造方法 |
US6074930A (en) * | 1998-01-07 | 2000-06-13 | Samsung Electronics Co., Ltd. | Method for forming a trench isolation structure comprising an interface treatment for trench liner and a subsequent annealing process |
US20020102800A1 (en) * | 2000-12-11 | 2002-08-01 | Van Den Heuvel Renerus Antonius | Method for the manufacture of a semiconductor device with a field-effect transistor |
CN101459108A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 形成浅沟槽隔离结构的方法和形成浅沟槽的刻蚀方法 |
CN101577241A (zh) * | 2008-05-06 | 2009-11-11 | 上海华虹Nec电子有限公司 | 在三极管和mos管混合电路制备中实现隔离结构的方法 |
CN102117748A (zh) * | 2009-12-31 | 2011-07-06 | 上海华虹Nec电子有限公司 | 双极晶体管的集电区和集电区埋层的制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377134A (zh) * | 2013-08-14 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 射频横向扩散晶体管无缺陷深场氧隔离的成长方法 |
CN104377134B (zh) * | 2013-08-14 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 射频横向扩散晶体管无缺陷深场氧隔离的成长方法 |
CN104576393A (zh) * | 2013-10-22 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件的制造方法 |
CN104576393B (zh) * | 2013-10-22 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | Rfldmos器件的制造方法 |
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