CN102117748A - 双极晶体管的集电区和集电区埋层的制造方法 - Google Patents
双极晶体管的集电区和集电区埋层的制造方法 Download PDFInfo
- Publication number
- CN102117748A CN102117748A CN2009102020691A CN200910202069A CN102117748A CN 102117748 A CN102117748 A CN 102117748A CN 2009102020691 A CN2009102020691 A CN 2009102020691A CN 200910202069 A CN200910202069 A CN 200910202069A CN 102117748 A CN102117748 A CN 102117748A
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- Prior art keywords
- collector region
- buried regions
- bipolar transistor
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- shallow trench
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 238000005468 ion implantation Methods 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 64
- 238000002955 isolation Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 8
- 230000035755 proliferation Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910015900 BF3 Inorganic materials 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 12
- 238000011049 filling Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102020691A CN102117748B (zh) | 2009-12-31 | 2009-12-31 | 双极晶体管的集电区和集电区埋层的制造方法 |
US12/979,907 US8222114B2 (en) | 2009-12-31 | 2010-12-28 | Manufacturing approach for collector and a buried layer of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102020691A CN102117748B (zh) | 2009-12-31 | 2009-12-31 | 双极晶体管的集电区和集电区埋层的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102117748A true CN102117748A (zh) | 2011-07-06 |
CN102117748B CN102117748B (zh) | 2012-06-20 |
Family
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Family Applications (1)
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CN2009102020691A Active CN102117748B (zh) | 2009-12-31 | 2009-12-31 | 双极晶体管的集电区和集电区埋层的制造方法 |
Country Status (2)
Country | Link |
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US (1) | US8222114B2 (zh) |
CN (1) | CN102117748B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102522363A (zh) * | 2011-12-22 | 2012-06-27 | 上海华虹Nec电子有限公司 | 深槽隔离结构的制造方法 |
CN103035514A (zh) * | 2012-05-16 | 2013-04-10 | 上海华虹Nec电子有限公司 | Rfldmos中形成厚氧化硅隔离层的制造方法 |
CN103035560A (zh) * | 2012-01-31 | 2013-04-10 | 上海华虹Nec电子有限公司 | 抑制p型赝埋层中的硼杂质外扩的方法 |
CN103123931A (zh) * | 2011-11-21 | 2013-05-29 | 上海华虹Nec电子有限公司 | 一种BiCMOS工艺中寄生N-I-P型PIN器件结构及其制造方法 |
CN106952903A (zh) * | 2017-03-29 | 2017-07-14 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20110003191A (ko) * | 2009-07-03 | 2011-01-11 | 삼성전자주식회사 | 소자 분리막 및 반도체 소자의 형성 방법 |
US8901554B2 (en) * | 2011-06-17 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including channel formation region including oxide semiconductor |
US8629512B2 (en) * | 2012-03-28 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate stack of fin field effect transistor with slanted sidewalls |
US9437470B2 (en) | 2013-10-08 | 2016-09-06 | Cypress Semiconductor Corporation | Self-aligned trench isolation in integrated circuits |
US10096611B2 (en) | 2015-07-23 | 2018-10-09 | United Microelectronics Corp. | Trapping gate forming process and flash cell |
US9653295B1 (en) * | 2016-01-07 | 2017-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a static random access memory |
US11355585B2 (en) | 2019-10-01 | 2022-06-07 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor |
US11563084B2 (en) | 2019-10-01 | 2023-01-24 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor |
US11404540B2 (en) | 2019-10-01 | 2022-08-02 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor |
US20220319909A1 (en) * | 2021-04-01 | 2022-10-06 | Nanya Technology Corporation | Method for manufacturing a semiconductor memory device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5455190A (en) * | 1994-12-07 | 1995-10-03 | United Microelectronics Corporation | Method of making a vertical channel device using buried source techniques |
JP2001185631A (ja) * | 1999-12-22 | 2001-07-06 | Nec Corp | 半導体装置、その製造方法 |
US7265018B2 (en) * | 2004-09-21 | 2007-09-04 | International Business Machines Corporation | Method to build self-aligned NPN in advanced BiCMOS technology |
US7573520B2 (en) * | 2005-05-17 | 2009-08-11 | Fujifilm Corp. | Solid state imaging apparatus and a driving method of the solid state imaging apparatus |
CN101192537A (zh) * | 2006-11-24 | 2008-06-04 | 上海华虹Nec电子有限公司 | 垂直型双极晶体管的制作工艺方法及垂直型双极晶体管 |
CN102097464B (zh) * | 2009-12-15 | 2012-10-03 | 上海华虹Nec电子有限公司 | 高压双极晶体管 |
CN102231379B (zh) * | 2009-12-21 | 2013-03-13 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管多指结构 |
CN102104062B (zh) * | 2009-12-21 | 2012-08-01 | 上海华虹Nec电子有限公司 | 双极晶体管 |
-
2009
- 2009-12-31 CN CN2009102020691A patent/CN102117748B/zh active Active
-
2010
- 2010-12-28 US US12/979,907 patent/US8222114B2/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103123931A (zh) * | 2011-11-21 | 2013-05-29 | 上海华虹Nec电子有限公司 | 一种BiCMOS工艺中寄生N-I-P型PIN器件结构及其制造方法 |
CN103123931B (zh) * | 2011-11-21 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 一种BiCMOS工艺中寄生N-I-P型PIN器件结构及其制造方法 |
CN102522363A (zh) * | 2011-12-22 | 2012-06-27 | 上海华虹Nec电子有限公司 | 深槽隔离结构的制造方法 |
CN103035560A (zh) * | 2012-01-31 | 2013-04-10 | 上海华虹Nec电子有限公司 | 抑制p型赝埋层中的硼杂质外扩的方法 |
US20130196491A1 (en) * | 2012-01-31 | 2013-08-01 | Shanghai Hua Hong Nec Electronics Co., Ltd. | Method of preventing dopant from diffusing into atmosphere in a bicmos process |
CN103035514A (zh) * | 2012-05-16 | 2013-04-10 | 上海华虹Nec电子有限公司 | Rfldmos中形成厚氧化硅隔离层的制造方法 |
CN103035514B (zh) * | 2012-05-16 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Rfldmos中形成厚氧化硅隔离层的制造方法 |
CN106952903A (zh) * | 2017-03-29 | 2017-07-14 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110159659A1 (en) | 2011-06-30 |
US8222114B2 (en) | 2012-07-17 |
CN102117748B (zh) | 2012-06-20 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140115 |
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Effective date of registration: 20140115 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |