CN103033730B - 一种判定pmosfet器件硼穿通的方法 - Google Patents
一种判定pmosfet器件硼穿通的方法 Download PDFInfo
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- CN103033730B CN103033730B CN201110303185.XA CN201110303185A CN103033730B CN 103033730 B CN103033730 B CN 103033730B CN 201110303185 A CN201110303185 A CN 201110303185A CN 103033730 B CN103033730 B CN 103033730B
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CN201110303185.XA CN103033730B (zh) | 2011-10-10 | 2011-10-10 | 一种判定pmosfet器件硼穿通的方法 |
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CN103033730A CN103033730A (zh) | 2013-04-10 |
CN103033730B true CN103033730B (zh) | 2015-10-14 |
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CN106206259B (zh) * | 2016-08-30 | 2019-05-31 | 上海华力微电子有限公司 | 一种降低变容器最小电容的方法 |
US10325824B2 (en) * | 2017-06-13 | 2019-06-18 | Globalfoundries Inc. | Methods, apparatus and system for threshold voltage control in FinFET devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102103993A (zh) * | 2009-12-18 | 2011-06-22 | 上海华虹Nec电子有限公司 | 沟槽mos器件中栅极的制备方法 |
CN102184868A (zh) * | 2011-04-25 | 2011-09-14 | 上海宏力半导体制造有限公司 | 提高沟槽栅顶角栅氧可靠性的方法 |
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JP2001185594A (ja) * | 1999-12-22 | 2001-07-06 | Nec Corp | ゲート絶縁膜評価方法及び装置 |
DE10234931A1 (de) * | 2002-07-31 | 2004-02-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Metallsilizidgates in einer standardmässigen MOS-Prozesssequenz |
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CN102103993A (zh) * | 2009-12-18 | 2011-06-22 | 上海华虹Nec电子有限公司 | 沟槽mos器件中栅极的制备方法 |
CN102184868A (zh) * | 2011-04-25 | 2011-09-14 | 上海宏力半导体制造有限公司 | 提高沟槽栅顶角栅氧可靠性的方法 |
Non-Patent Citations (2)
Title |
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Zhong Xinghua等.Electrical Properties of Ultra Thin Nitride/Oxynitride Stack Dielectrics pMOS Capacitor with Refractory Metal Gate.《半导体学报》.2005,第26卷(第4期),第651页摘要,第651页右栏倒数第1段-第654页右栏第1段,附图1-7,表1. * |
超深亚微米PMOSFET器件的NBTI效应;韩晓亮等;《半导体学报》;20030630;第24卷(第6期);第178-182页 * |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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