CN103022048A - Array substrate, preparation method of array substrate and organic light emitting diode display device - Google Patents
Array substrate, preparation method of array substrate and organic light emitting diode display device Download PDFInfo
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Abstract
The invention provides an array substrate, a preparation method of the array substrate and an organic light emitting diode display device, belongs to the technical field of organic light emitting diode display and can solve the problem that existing organic light emitting diode display devices are low in light emitting efficiencies. A pixel unit of the array substrate comprises a thin film transistor driving layer, an organic light emitting diode and a color film; the distance between the organic light emitting diode and the substrate is larger than that between the thin film transistor driving layer and the substrate, the organic light emitting diode is driven by the thin film transistor driving layer and sequentially comprises a first electrode, a light emitting layer and a second electrode, the first electrode is a reflection layer or the first electrode is transparent, and the lower side of the first electrode is provided with the reflection layer; the second electrode is a half-reflection half-transparent layer or the second electrode is transparent, and an upper side of the second electrode is provided with the half-reflection half-transparent layer; a reflection surface of the reflection layer is provided with a concave-convex structure or a wave structure, and the reflection layer and the half-reflection half-transparent layer form a microcavity structure; and the distance between the the color film and the substrate than is larger than that between the organic light emitting diode and the substrate. The array substrate is particularly applicable to white organic light emitting diode display devices.
Description
Technical field
The invention belongs to the organic light-emitting diode display technical field, be specifically related to a kind of array base palte and preparation method thereof, organic LED display device.
Background technology
Organic Light Emitting Diode (OLED, Organic Light Emitting Diode) is a kind of electroluminescent device of organic thin film, and it has, and preparation technology is simple, cost is low, luminous efficiency is high, easily form the advantages such as flexible structure.Therefore, utilize the Display Technique of Organic Light Emitting Diode to become a kind of important Display Technique.
Organic LED display device comprises a plurality of pixel cells, is provided with an Organic Light Emitting Diode in each pixel cell, can control their luminous intensity by the electric current of controlling each Organic Light Emitting Diode, thereby realizes showing.Wherein, each on the display " visible pixels " is made of a plurality of pixel cells adjacent and that send different colours light, and the light that each pixel cell sends becomes the light that this " visible pixels " sent after mixing; The color (being the color of color film) that forms the pixel cell of " visible pixels " can have multiple different mode, such as RGB (RGB) pattern (namely a red pixel unit, a green pixel unit, a yellow pixel unit form " visible pixels "), RGBW (red, green, blue and white) pattern, RGBY (red, green, blue and yellow) pattern etc.
Because the technology comparative maturity of white organic LED (WOLED), luminous efficiency is high, so it is applied widely in organic LED display device.
As shown in Figure 1, one " visible pixels " of white organic LED display unit can comprise red, green, blue three pixel cell 9R, 9G, the 9B (certainly also can be other patterns) that is located on the substrate 7, be provided with thin-film transistor (TFT) among each pixel cell 9R, 9G, the 9B and drive layer 1, drive on the layer 1 at thin-film transistor and be provided with successively anode (the first electrode 21), luminescent layer 23, negative electrode (the second electrode 22), confining bed 8 (Encapsulation), the color film 3R of respective color, 3G, 3B (claiming again colored filter).Wherein, anode, luminescent layer 23, negative electrode consist of Organic Light Emitting Diode 2, but thin-film transistor drives the anode of layer 1 drive each pixel cell 9R, 9G, 9B, thereby make each Organic Light Emitting Diode 2 send the light of different brightness, become different colours behind the corresponding color film 3R of these light processes, 3G, the 3B, and be mixed into " visible pixels " issued light.
For improving luminous efficiency, can in organic LED display device, form microcavity (Micro Cavity) structure.Micro-cavity structure refers to that the thickness that forms is the structure of micron dimension between a reflector and half anti-semi-permeable layer, light can constantly reflect at two interlayers, because resonance effect, so finally the light of specific wavelength can be strengthened from the light that the half-reflection and half-transmission layer penetrates, and the wavelength that this is strengthened is relevant with microcavity thickness.
In the white organic LED display unit, the different pixels unit is be used to the light that sends different colours, therefore the microcavity at place, different pixels unit should be able to make different wave length (light identical with its color film color) obtain to strengthen, and namely the microcavity thickness at place, different pixels unit should be different.For reaching this purpose, can be as shown in Figure 2, in the white organic LED display unit, take negative electrode as half-reflection and half-transmission layer 6, and anode is made as hyaline layer, and below anode, sets up reflector 4; Like this, as long as regulate the thickness that the thickness of each anode can be controlled the micro-cavity structure of respective pixel unit 9R, 9G, 9B.
The inventor finds that there are the following problems at least in the prior art: although micro-cavity structure has improved the luminous efficiency of array base palte, but, because reflector and half-reflection and half-transmission layer in the micro-cavity structure are the plane, the reflection that light carries out in microcavity is less, so its luminous efficiency is still not high enough.
Summary of the invention
Technical problem to be solved by this invention comprises, for the array base palte luminous efficiency with micro-cavity structure of the prior art not high enough problem still, provides a kind of luminous efficiency high array base palte.
The technical scheme that solution the technology of the present invention problem adopts is a kind of array base palte, comprises a plurality of pixel cells that are positioned on the substrate, and described pixel cell comprises: thin-film transistor drives layer; Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer consist of micro-cavity structure; Than the color film of described Organic Light Emitting Diode further from substrate.
Wherein, " thin-film transistor drives layer " refers to that it comprises the sandwich constructions such as thin-film transistor, scan line, data wire, power voltage line, insulating barrier, passivation layer for the array architecture of thin film transistor that drives Organic Light Emitting Diode." Organic Light Emitting Diode " refers to by the first electrode, the second electrode and is clipped in the luminous structure of energy that two interelectrode luminescent layers consist of, may only have the second electrode and luminescent layer in the part position (such as the position between each pixel cell) of substrate and nothing the first electrode (so the first electrode in each pixel cell is separate), the pixel that perhaps also can be provided with insulation between electrode and luminescent layer limits layer, these positions can not be luminous, so be not " Organic Light Emitting Diode "; Therefore, as long as the reflector is positioned at the position relative with " Organic Light Emitting Diode " with color film, and can there be reflector and color film in the zone that does not consist of " Organic Light Emitting Diode "." luminescent layer " refers to can be under the function of current luminous structure, and it can be single layer structure, also can be comprised of a plurality of different layers; " luminescent layer " comprises an electroluminescent organic material layer (EML) at least, but it also can comprise: be positioned at electron transfer layer (ETL) and electron injecting layer (EIL) between electroluminescent organic material layer and cathode layer; Be positioned at other structures such as hole injection layer (HIL) between electroluminescent organic material layer and anode layer and hole transmission layer (HTL)." concaveconvex structure or wave structure " refers on the thickness direction in reflector, and the height of reflecting surface diverse location is different, thereby makes the light that shines on the reflecting surface that diffuse reflection can occur; Concrete, it can be by raised points or the depression points of site formal distribution on reflecting surface, also can be the structure of the undulating movement of strip, as long as it can make reflecting surface uneven.
In the array base palte of the present invention, owing to have concaveconvex structure or wave structure on the reflector, diffuse reflection can occur in light in microcavity, thereby the light amount of final ejaculation is increased, improve luminous efficiency, find that after deliberation this structure can improve luminous efficiency about 50%; In addition, because its thin-film transistor drives layer top and is provided with reflector and Organic Light Emitting Diode, so the thin-film transistor position also can be used for luminous on the one hand, aperture opening ratio is high, luminous efficiency is high, and on the other hand, the reflector can stop light to be mapped on the thin-film transistor, thereby reduce its leakage current, make to show accurately.
Preferably, described luminescent layer is for being used for sending the luminescent layer of white light.
Further preferably, described luminescent layer be used to sending white light comprises: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting; Or the electroluminescent organic material layer that is mixed into by the electroluminescent organic material of the electroluminescent organic material of the electroluminescent organic material that glows, green light, blue light-emitting.
That is to say that luminescent layer can send white light by multiple different mode, as can be with the overlapping setting of electroluminescent organic material layer of rubescent, green, blue three color light (certainly also can adopt other color combination), thereby the light that they are sent be mixed into white light; Perhaps also electroluminescent organic material rubescent, green, blue three color light can be mixed into an electroluminescent organic material layer, it is emitted white light.
Preferably, described array base palte also comprises: be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and the reflector.
Because the reflector is usually by the metal material manufacturing, there is not flowability, so its configuration of surface can along with the metamorphosis of its rectangular structure, therefore, can make the living corresponding concaveconvex structure of natural birth or wave structure on the reflector by concaveconvex structure or wave structure are set at resin bed; Simultaneously, because the effect of resin bed, so the thin-film transistor of the first electrode (anode) and its below drives the various electrodes in the layer, the parasitic capacitance between wire reduces, so luminous efficiency can obtain further raising.
Further preferably, be provided with via hole in the described resin bed, described the first electrode drives layer by described via hole and thin-film transistor and is electrically connected, and the pixel that described via hole place is provided with the insulation between the first electrode and luminescent layer limits layer.
Further preferably, the thickness of described resin bed exists
Between.
Preferably, described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell; Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, source electrode connection data line, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with the first electrode of OLED.
Preferably, described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, and reflectivity is between 80 ~ 100%, thickness exists
Between.
Preferably, described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness exists
Between.
Preferably, described color film thickness exists
Between.
Preferably, described color film comprises: red color film, green tint film, blue color film; Or red color film, green tint film, blue color film, white color film; Or red color film, green tint film, blue color film, yellow color film.
That is to say that the color of the color film in each pixel cell of composition one " visible pixels " can have above multiple different mode; Certainly, if adopt other color mode, also be feasible.
Preferably, described the first electrode is the negative electrode of Organic Light Emitting Diode, and described the second electrode is the anode of Organic Light Emitting Diode; Or described the first electrode anode that is Organic Light Emitting Diode, described the second electrode is the negative electrode of Organic Light Emitting Diode.
Technical problem to be solved by this invention also comprises, for the array base palte luminous efficiency with micro-cavity structure of the prior art not high enough problem still, provides a kind of luminous efficiency high array base palte preparation method.
The technical scheme that solution the technology of the present invention problem adopts is a kind of array base palte preparation method, and it comprises: form the figure that comprises thin-film transistor driving layer at substrate; At the figure of the substrate formation resin bed of finishing abovementioned steps, and at described resin bed formation concaveconvex structure or wave structure; Form the figure that includes OLED at the substrate of finishing abovementioned steps; Wherein, the electrode of the close substrate of described Organic Light Emitting Diode is the reflector, or the electrode of the close substrate of described Organic Light Emitting Diode is transparent and its downside also will form the reflector; The electrode away from substrate of described Organic Light Emitting Diode is the half-reflection and half-transmission layer, or the electrode away from substrate of described Organic Light Emitting Diode is transparent and its upside also will form the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure; Form the figure that comprises color film at the substrate of finishing abovementioned steps.
Wherein, the method for " forming certain layer or certain structure " is various, and it can be to form complete rete by coating, printing, deposition modes such as (sputter, evaporation, chemical vapour deposition (CVD)s etc.); Also can be directly to form required figure by modes such as printing, control depositions; Also can form required figure by " composition technique ", wherein " composition technique " generally includes steps such as forming complete rete, photoresist coating, exposure, development, etching, photoresist lift off.
What array base palte preparation method of the present invention prepared is above-mentioned array base palte, so its luminous efficiency has obtained further raising.
Preferably, comprise at described resin bed formation concaveconvex structure or wave structure: the composition technique by printing technology or use duotone mask plate forms concaveconvex structure or wave structure at described resin bed.
Wherein, " use the composition technique of duotone mask plate " and mainly refer to utilize duotone mask plate (comprising intermediate tone mask plate and gray scale mask plate) to control the exposure of photoresist diverse location, make the part photoresist that the part exposure occur, thus after etch step in make the layer under it that partial etching occur, thereby produce surface relief structure or wave structure.
Preferably, comprise the via hole that is communicated with thin-film transistor driving layer in the figure of described resin bed; And describedly form the figure include OLED at substrate and comprise: this step is following any one among both: the figure that forms the first reflective electrode by composition technique, or the figure that forms first the reflector by composition technique forms the figure of the first transparent electrode again; Wherein, described the first electrode is electrically connected by described via hole and thin-film transistor driving layer; Form the figure of the pixel restriction layer of the insulation that is positioned at least described via hole top by composition technique; Form luminescent layer at the substrate of finishing abovementioned steps; This step is following any one among both: form the second electrode of half-reflection and half-transmission, or, form first the second transparent electrode and form again the half-reflection and half-transmission layer.
Preferably, the curing temperature of described color film is less than or equal to 130 ℃.
Film forms after luminescent layer because the present invention prizes, and therefore the curing temperature of color film can not be too high, in case luminescent layer is produced destruction.
Technical problem to be solved by this invention also comprises, for the organic LED display device luminous efficiency with micro-cavity structure of the prior art not high enough problem still, provides a kind of luminous efficiency high organic LED display device.
The technical scheme that solution the technology of the present invention problem adopts is a kind of organic LED display device, and it comprises above-mentioned array base palte.
Has above-mentioned array base palte in the organic LED display device of the present invention, so its luminous efficiency has obtained further raising.
The present invention is specially adapted in white organic LED (WOLED) display unit.
Description of drawings
Fig. 1 is the part section structural representation of existing array base palte;
Fig. 2 is existing part section structural representation with array base palte of micro-cavity structure;
Fig. 3 is the part section structural representation of the array base palte of embodiments of the invention 2;
Fig. 4 is the equivalent circuit diagram of OLED driver circuit of the array base palte of embodiments of the invention 2;
Fig. 5 forms the part section structural representation that thin-film transistor drives the array base palte behind the layer among the array base palte preparation method of embodiments of the invention 4;
Fig. 6 is the part section structural representation that forms the array base palte behind the resin bed among the array base palte preparation method of embodiments of the invention 4;
Fig. 7 is the part section structural representation that forms the array base palte behind the first electrode (reflector) among the array base palte preparation method of embodiments of the invention 4;
Fig. 8 is the part section structural representation that is formed with the array base palte behind the OLED among the array base palte preparation method of embodiments of the invention 4;
Fig. 9 is the part section structural representation that forms the array base palte behind the color film among the array base palte preparation method of embodiments of the invention 4.
Wherein Reference numeral is: 1, thin-film transistor drives layer; 111, switching thin-film transistor grid; 112, switching thin-film transistor source electrode; 113, switching thin-film transistor drain electrode; 114, switching thin-film transistor active area; 121, drive the film crystal tube grid; 122, drive the thin-film transistor source electrode; 123, drive the thin-film transistor drain electrode; 124, drive the thin-film transistor active area; 12, gate insulator; 13, spacer insulator layer; 14, passivation layer; 2, Organic Light Emitting Diode; 21, the first electrode; 22, the second electrode; 23, luminescent layer; 3, color film; 3R, red color film; 3G, green tint film; 3B, blue color film; 4, reflector; 5, resin bed; 6, half-reflection and half-transmission layer; 7, substrate; 8, confining bed; 9R, red pixel unit; 9G, green pixel unit; 9B, blue pixel unit; 91, pixel limits layer; DATA, data wire; SCAN, scan line; Vdd, power voltage line; Cs, storage capacitance.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1:
Present embodiment provides a kind of array base palte, comprises a plurality of pixel cells that are positioned on the substrate, and described pixel cell comprises:
Thin-film transistor drives layer.
Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer consist of micro-cavity structure.
Than the color film of described Organic Light Emitting Diode further from substrate.
In the array base palte of present embodiment, owing to have concaveconvex structure or wave structure on the reflector, diffuse reflection can occur in light in microcavity, thereby the light amount of final ejaculation is increased, improve luminous efficiency, find that after deliberation this structure can improve luminous efficiency about 50%; In addition, because its thin-film transistor drives layer top and is provided with reflector and Organic Light Emitting Diode, so the thin-film transistor position also can be used for luminous on the one hand, aperture opening ratio is high, luminous efficiency is high, and on the other hand, the reflector can stop light to be mapped on the thin-film transistor, thereby reduce its leakage current, make to show accurately.
Embodiment 2:
As shown in Figure 3, Figure 4, present embodiment provides a kind of array base palte, and it comprises a plurality of pixel cells that are positioned on the substrate 7; Wherein, a plurality of adjacent pixel cells with the color film 3 of different colours consist of " visible pixels " on the display.Wherein, the color of color film can be by multiple different pattern.Preferably, color film comprises red color film, green tint film, blue color film (RGB pattern); Or comprise red color film, green tint film, blue color film, white color film (RGBW pattern); Or comprise red color film, green tint film, blue color film, yellow color film (RGBY pattern).
As shown in Figure 3, on the direction away from substrate 7 gradually, array base palte comprises that successively thin-film transistor drives layer 1, resin bed 5, Organic Light Emitting Diode 2, color film 3, confining bed 8.
Wherein, it is for driving the luminous thin film transistor (TFT) array of Organic Light Emitting Diode 2 that thin-film transistor drives layer 1, and it mainly comprises the structures such as thin-film transistor, scan line SCAN, data wire DATA, power voltage line Vdd, gate insulator 12, spacer insulator layer 13, passivation layer 14.
Wherein, each thin-film transistor is preferably metal oxide thin-film transistor, such as zinc tin oxide (ZnSnO) thin-film transistor, indium gallium zinc oxide (IGZO) thin-film transistor etc., because metal oxide thin-film transistor has simple in structure, easy preparation, the advantage such as mobility is high, homogeneity is good.Certainly, also be feasible if use amorphous silicon film transistor, OTFT etc.
Preferably, a kind of structure of thin-film transistor driving layer 1 as shown in Figure 3, comprise many cluster films transistor, pixel cell of every cluster film transistor controls, and every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and two thin-film transistors have respectively separately independently active area 114,124.Wherein, the grid 111 of switching thin-film transistor connects scan line SCAN, source electrode 112 connection data line DATA, and drain electrode 113 connects the grid 121 that drives thin-film transistor; And the source electrode 122 that drives thin-film transistor connects power voltage line Vdd, drain electrode 123 is connected with first electrode 21 (being anode) of OLED 2, and and 113 of the drain electrodes of switching thin-film transistor form storage capacitors Cs, thereby form as shown in Figure 4 equivalent electric circuit.Wherein, separate by gate insulation layer 12 and spacer insulator layer 13 between each structure in the thin-film transistor driving layer 1, and separate by passivation layer 14 between other structures in thin-film transistor and the array base palte.
Certainly, above-described just thin-film transistor drives a kind of concrete structure of layer 1, and thin-film transistor drives layer 1 and also can be other different structure, as long as its Organic Light Emitting Diode 2 in can each pixel cell of drive.Because driving layer 1, thin-film transistor can adopt multiple different form known, so be not described in detail at this.
Preferably, the passivation layer 14 that drives layer 1 at thin-film transistor is provided with resin bed 5, and the upper surface of this resin bed 5 has concaveconvex structure or wave structure, and its thickness preferably exists
Between.
Preferably, reflector 4 (the first electrode 21 or independent reflector 4) by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, reflectivity is between 80 ~ 100%, thickness exists
Between.
Preferably, half-reflection and half-transmission layer 6 (the second electrode 21 or independent half-reflection and half-transmission layer 6) by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness exists
Between.
Because reflector 4 is by making without mobile material, so concaveconvex structure or the corresponding concaveconvex structure of wave structure or wave structure on its meeting self-assembling formation and the resin bed 5, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it.
Wherein, be easy to realize at resin bed 5 formation concaveconvex structures or wave structure, therefore by resin bed 5 is set, can make easily the upper surface in reflector 4 form concaveconvex structure or wave structure (simultaneously, the layer of other in the Organic Light Emitting Diode 2 also can form concaveconvex structure or wave structure).Certainly, concaveconvex structure on the reflector 4 or wave structure also can form by other means,, resin bed 5 drives passivation layer 14 formation concaveconvex structure or the wave structures of layer 1 as can not being set at thin-film transistor, form concaveconvex structure or wave structure thereby make on the reflector 4, perhaps also can be directly 4 form concaveconvex structure or wave structures in the reflector.Simultaneously, the thin-film transistor that resin bed 5 also can reduce the first electrode 21 (anode) and its downside drives the various electrodes in the layer 1, the parasitic capacitance between wire, thereby further improves luminous efficiency.
Half-reflection and half-transmission layer 6 and reflector 4 have consisted of micro-cavity structure, the light that is sent by luminescent layer 23 can be at the two through penetrating from half-reflection and half-transmission layer 6 behind the Multi reflection again, and because resonance effect makes the light (light identical with color film 3 colors of this pixel cell) of specific wavelength obtain to strengthen, to improve luminous efficiency; The light wavelength that wherein will strengthen is determined by the thickness of microcavity, and the thickness of microcavity can be by the thickness adjustment of luminescent layer 23 grades in the pixel cell of control different colours.Because reflector 4 has above-mentioned concaveconvex structure or wave structure (in fact also can have on the half-reflection and half-transmission layer 6), when so light is mapped on it diffuse reflection can occur, can make like this luminous efficiency obtain further to improve, by analysis, the array base palte of the comparable no concave-convex structure of its luminous efficiency or wave structure improves about 50%.
Preferably, be provided with via hole in the resin bed 5, the first electrode 21 is electrically connected (certainly also respective openings should be arranged in the passivation layer 14 of thin-film transistor driving layer 1) by this via hole with the drain electrode that thin-film transistor drives the driving thin-film transistor in the layer 1; Simultaneously, be positioned in addition pixel restriction layer 91 (PDL, the Pixel Defining Layer) of the insulation of 23 of the first electrode 21 and luminescent layers at this via hole place.
The Organic Light Emitting Diode 2 of present embodiment and thin-film transistor drive 1 on layer and are provided with resin bed 5, are electrically connected so the first electrode 21 need to drive layer 1 by via hole and thin-film transistor.And crossing the hole site, reflector 4 there is no concaveconvex structure or wave structure, and the thickness of the direction of luminescent layer 23, micro-cavity structure etc. is all irregular, so this part is not useable for luminous (this part is not Organic Light Emitting Diode 2 in other words); The pixel that therefore, insulation need to be set limits layer 91 with the electric current of 23 of the first electrode 21 of blocking this position and luminescent layers.Certainly, play the purpose (limiting in other words the viewing area of pixel cell) that stops Organic Light Emitting Diode 2 luminous as long as pixel limits layer 91, so it also can be other form, as can be between the second electrode 22 and luminescent layer 23.
Certainly, the first electrode 21 also can drive layer 1 with thin-film transistor in other way and be electrically connected, and for example can drive layer 1 by the position between each pixel cell and thin-film transistor and link to each other.
Preferably, luminescent layer 23 is for being used for sending the luminescent layer 23 of white light; It can realize the function that emits white light by multiple different mode.Further preferred, the luminescent layer that sends white light comprises: the overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting; Or the electroluminescent organic material layer that is mixed into by the electroluminescent organic material of the electroluminescent organic material of the electroluminescent organic material that glows, green light, blue light-emitting.
Because the technology comparative maturity of white light OLED, therefore white light uses 23 the easiest demonstrations of luminescent layer that emit white light through can directly becoming the light of these coloured silk film 3 colors behind the color film 3 simultaneously.Certainly, if luminescent layer 23 sends is that coloured light also is feasible, as long as the color of each color film 3 of corresponding change guarantees finally can realize that demonstration gets final product.
Obviously, although the anode take the first electrode 21 as Organic Light Emitting Diode 2 in the present embodiment, the second electrode 22 is the negative electrode of Organic Light Emitting Diode 2; If but the negative electrode take the first electrode 21 as Organic Light Emitting Diode 2, the second electrode 22 also is feasible for the anode of Organic Light Emitting Diode 2.
Be provided with color film 3 at Organic Light Emitting Diode 2, color film 3 is used for filtering the light by it, and color film 3 colors in each pixel cell are different, thereby each pixel cell sends the light of different colours.Wherein, because color film 3 thickness are large and flowability is arranged before curing, so its upper surface can become horizontal plane usually substantially.
Certainly, also can have other conventional structure in the array base palte of present embodiment, also can have pixel such as the edge at each pixel cell and limit layer 91 etc.
Embodiment 3:
Present embodiment provides a kind of array base palte preparation method, and it may further comprise the steps:
Form the figure that comprises thin-film transistor driving layer at substrate.
At the figure of the substrate formation resin bed of finishing abovementioned steps, and at described resin bed formation concaveconvex structure or wave structure.
Form the figure that includes OLED at the substrate of finishing abovementioned steps; Wherein, the electrode of the close substrate of described Organic Light Emitting Diode is the reflector, or the electrode of the close substrate of described Organic Light Emitting Diode is transparent and its downside also will form the reflector; The electrode away from substrate of described Organic Light Emitting Diode is the half-reflection and half-transmission layer, or the electrode away from substrate of described Organic Light Emitting Diode is transparent and its upside also will form the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure.
Form the figure that comprises color film at the substrate of finishing abovementioned steps.
What the array base palte preparation method of present embodiment prepared is above-mentioned array base palte, so its luminous efficiency has obtained further raising.
Embodiment 4:
Present embodiment provides a kind of above-mentioned array base palte preparation method, and to shown in Figure 9, it may further comprise the steps such as Fig. 5:
S01, form the figure that thin-film transistors drive layer 1 at substrate 7, obtain structure as shown in Figure 5.Wherein, thin-film transistor drives in the layer 1 and comprises a plurality of layers of structure, and these layers structure can repeatedly form in the composition technique successively.Usually composition technique comprises the complete rete that first formation (by modes such as deposition, coating, sputters) is made of certain material, remove the part in this complete rete by photoetching process (generally including the steps such as photoresist coating, exposure, development, etching, photoresist lift off) afterwards, make remainder form required figure.Because composition technique is known technique, and the structure of thin-film transistor driving layer 1 can be same as the prior art, so no longer its detailed process is described in detail at this.
S02, formation resin bed 5, and pass through printing technology or use the composition technique of duotone mask plate to form concaveconvex structure or wave structures at resin bed 5, (can be independent composition technique by composition technique, also can be the composition technique that forms concaveconvex structure or wave structure) form the via hole that is communicated with thin-film transistor driving layer 1 at resin bed 5, obtain structure as shown in Figure 6.Wherein, use the composition technique of duotone mask plate mainly to refer to utilize duotone mask plate (comprising intermediate tone mask plate and gray scale mask plate) to control the exposure of photoresist diverse location, make the part photoresist that the part exposure occur, thus after etch step in make the layer under it that partial etching occur, thereby produce surface relief structure or wave structure; Certainly, resin bed 5 also can form with the photosensitive resin material, and needing only in the composition technique so directly exposes, develops just can obtain as shown in Figure 6 structure, need not the operation relevant with photoresist.
S03, formation include the figure of OLED 2, and it comprises:
S031, form the figure (as shown in Figure 7) of reflective the first electrode 21 (namely the reflector 4) by composition technique; Or forming reflector 4 by composition technique first, composition technique forms the first transparent electrode 21 again.Wherein, owing to have concaveconvex structure or wave structure on the resin bed 5, so reflector 4 also self-assembling formation concaveconvex structure or wave structure, this concaveconvex structure or wave structure can make the light generation diffuse reflection that is mapped on it; Simultaneously, no matter adopt which kind of mode, the first electrode 21 all drives layer 1 by the via hole on the resin bed and thin-film transistor and is electrically connected.
S032, the pixel that forms the insulation be positioned at least the via hole top by composition technique limit the figure of layer 91.
S033, formation luminescent layer 23.
Second electrode 22 (namely the half-reflection and half-transmission layer 6) of S034, formation half-reflection and half-transmission obtains structure as shown in Figure 8; Or, form first the second transparent electrode 22 and form again half-reflection and half-transmission layer 6.
S04, in each pixel, form respectively the color film 3 of required color by typography or composition technique, obtain the figure of color film 3, obtain structure as shown in Figure 9.Preferably, the curing temperature of color film 3 is less than or equal to 130 ℃, because this moment, luminescent layer 23 formed, too high temperature can be damaged luminescent layer 23, therefore needs the curing temperature of the color film 3 of control.
S05, formation confining bed 8 obtain array base palte as shown in Figure 3.The array base palte of this moment also can be used as organic LED display device, perhaps can be again to obtaining organic LED display device after the processing such as it encapsulates.
Embodiment 5:
Present embodiment provides a kind of organic LED display device, and it comprises above-mentioned array base palte.This display unit can comprise: any product or parts with Presentation Function such as oled panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
Has above-mentioned array base palte in the organic LED display device of present embodiment, so its luminous efficiency has obtained further raising.
Certainly, also can have other conventional structure in the organic LED display device of present embodiment, as with array base palte to the closed substrate of box, power subsystem, display driver unit etc.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (17)
1. an array base palte comprises a plurality of pixel cells that are positioned on the substrate, it is characterized in that described pixel cell comprises:
Thin-film transistor drives layer;
Drive layer further from substrate and be subjected to thin-film transistor to drive the Organic Light Emitting Diode that layer drives than described thin-film transistor, Organic Light Emitting Diode comprises the first electrode, luminescent layer, the second electrode successively on away from the direction of substrate; Wherein, the first electrode is that transparent and its downside of reflector or the first electrode is provided with the reflector, and the second electrode to be half-reflection and half-transmission layer or the second electrode transparent and its upside is provided with the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure, and described reflector and half-reflection and half-transmission layer consist of micro-cavity structure;
Than the color film of described Organic Light Emitting Diode further from substrate.
2. array base palte according to claim 1 is characterized in that,
Described luminescent layer is for being used for sending the luminescent layer of white light.
3. array base palte according to claim 2 is characterized in that, described luminescent layer be used to sending white light comprises:
The overlapping electroluminescent organic material layer that glows, the electroluminescent organic material layer of green light, the electroluminescent organic material layer of blue light-emitting;
Or
The electroluminescent organic material layer that is mixed into by the electroluminescent organic material of the electroluminescent organic material of the electroluminescent organic material that glows, green light, blue light-emitting.
4. array base palte according to claim 3 is characterized in that, also comprises:
Be located at the resin bed that described reflector and thin-film transistor drive interlayer, have concaveconvex structure or wave structure on contacted of described resin bed and the reflector.
5. array base palte according to claim 4 is characterized in that,
Be provided with via hole in the described resin bed, described the first electrode drives layer by described via hole and thin-film transistor and is electrically connected, and the pixel that described via hole place is provided with the insulation between the first electrode and luminescent layer limits layer.
6. array base palte according to claim 4 is characterized in that,
The thickness of described resin bed exists
Between.
7. the described array base palte of any one in 3 according to claim 1 is characterized in that,
Described thin-film transistor drives layer and comprises scan line, data wire, power voltage line, many cluster films transistor, and every cluster film transistor is used for driving the Organic Light Emitting Diode of a pixel cell;
Wherein, every cluster film transistor comprises a switching thin-film transistor and a driving thin-film transistor, and the grid of described switching thin-film transistor connects scan line, source electrode connection data line, and drain electrode connects the grid that drives thin-film transistor; The source electrode that drives thin-film transistor connects power voltage line, and drain electrode is connected with the first electrode of OLED.
8. the described array base palte of any one in 3 according to claim 1 is characterized in that,
Described reflector by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, and reflectivity is between 80 ~ 100%, thickness exists
Between.
9. the described array base palte of any one in 3 according to claim 1 is characterized in that,
Described half-reflection and half-transmission layer by any one metal in silver, aluminium, molybdenum, copper, titanium, the chromium or in them any two kinds or above alloy consist of, and transmitance is between 5 ~ 95%, thickness exists
Between.
10. the described array base palte of any one in 3 according to claim 1 is characterized in that,
Described color film thickness exists
Between.
11. the described array base palte of any one in 3 according to claim 1 is characterized in that described color film comprises:
Red color film, green tint film, blue color film;
Or
Red color film, green tint film, blue color film, white color film;
Or
Red color film, green tint film, blue color film, yellow color film.
12. the described array base palte of any one in 3 is characterized in that according to claim 1,
Described the first electrode is the negative electrode of Organic Light Emitting Diode, and described the second electrode is the anode of Organic Light Emitting Diode;
Or
Described the first electrode is the anode of Organic Light Emitting Diode, and described the second electrode is the negative electrode of Organic Light Emitting Diode.
13. an array base palte preparation method is characterized in that, comprising:
Form the figure that comprises thin-film transistor driving layer at substrate;
At the figure of the substrate formation resin bed of finishing abovementioned steps, and at described resin bed formation concaveconvex structure or wave structure;
Form the figure that includes OLED at the substrate of finishing abovementioned steps; Wherein, the electrode of the close substrate of described Organic Light Emitting Diode is the reflector, or the electrode of the close substrate of described Organic Light Emitting Diode is transparent and its downside also will form the reflector; The electrode away from substrate of described Organic Light Emitting Diode is the half-reflection and half-transmission layer, or the electrode away from substrate of described Organic Light Emitting Diode is transparent and its upside also will form the half-reflection and half-transmission layer; Have on the reflecting surface in described reflector be used to making light produce irreflexive concaveconvex structure or wave structure;
Form the figure that comprises color film at the substrate of finishing abovementioned steps.
14. array base palte preparation method according to claim 13 is characterized in that, comprises at described resin bed formation concaveconvex structure or wave structure:
Composition technique by printing technology or use duotone mask plate forms concaveconvex structure or wave structure at described resin bed.
15. array base palte preparation method according to claim 13 is characterized in that, comprises in the figure of described resin bed being communicated with the via hole that thin-film transistor drives layer; And
Describedly form the figure include OLED at substrate and comprise:
This step is following any one among both: form the figure of the first reflective electrode by composition technique, or the figure that forms first the reflector by composition technique forms the figure of the first transparent electrode again; Wherein, described the first electrode is electrically connected by described via hole and thin-film transistor driving layer;
Form the figure of the pixel restriction layer of the insulation that is positioned at least described via hole top by composition technique;
Form luminescent layer at the substrate of finishing abovementioned steps;
This step is following any one among both: form the second electrode of half-reflection and half-transmission, or, form first the second transparent electrode and form again the half-reflection and half-transmission layer.
16. the described array base palte preparation method of any one in 15 is characterized in that according to claim 13,
The curing temperature of described color film is less than or equal to 130 ℃.
17. an organic LED display device is characterized in that, comprising:
The described array base palte of any one in the claim 1 to 12.
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